JP2014056910A - Application processing device, joint system, application processing method, program, and computer storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To apply an adhesive for joining substrates to a surface of the one substrate in a proper manner.SOLUTION: An application processing device applies an adhesive G to a processed wafer W and includes: a spin chuck which holds and rotates the processed wafer W; an adhesive nozzle 292 which supplies an adhesive G to a center part of the processed wafer W held by the spin chuck; and a solvent nozzle 302 which supplies a solvent H for improving the wettability of the adhesive G in an outer peripheral part Wof the processed wafer W onto the outer peripheral part Wof the processed wafer W held by the spin chuck.

Description

  The present invention relates to a coating processing apparatus that applies an adhesive for bonding substrates to the surface of a single substrate, a bonding system including the coating processing apparatus, a coating processing method using the coating processing apparatus, a program, and a computer. The present invention relates to a storage medium.

  In recent years, for example, in semiconductor device manufacturing processes, semiconductor wafers (hereinafter referred to as “wafers”) have been increasing in diameter. Further, in a specific process such as mounting, it is required to make the wafer thinner. For example, if a thin wafer having a large diameter is transported or polished as it is, the wafer may be warped or cracked. For this reason, for example, in order to reinforce the wafer, the wafer is attached to, for example, a wafer that is a support substrate or a glass substrate.

  The bonding of the wafer and the support substrate is performed by interposing an adhesive between the wafer and the support substrate using, for example, a bonding system. The bonding system includes, for example, a coating device that applies an adhesive to a wafer, a heat treatment device that heats the wafer to which the adhesive is applied, and a bonding device that presses and bonds the wafer and the support substrate via the adhesive. Have. In the coating apparatus, so-called spin coating is performed in which an adhesive is supplied to the center of the rotating wafer and the adhesive is applied to the wafer surface by diffusing the adhesive on the wafer by centrifugal force. (Patent Document 1).

JP 2012-69900 A

  By the way, the outer peripheral portion of the wafer is usually chamfered, but when the wafer is polished as described above, the outer peripheral portion of the wafer becomes sharp and sharp. If it does so, chipping will generate | occur | produce in the outer peripheral part of a wafer especially in a grinding | polishing process, and there exists a possibility that a wafer may be damaged. Therefore, it has been proposed to perform so-called edge trimming in which the outer peripheral portion of the wafer is shaved in advance before the polishing process. The outer peripheral portion of the wafer subjected to the edge trim is cut into a step shape so that the outer peripheral portion is removed after the polishing process, for example.

  However, when the adhesive is applied to the wafer whose outer peripheral portion is cut in this way by spin coating with the above-described coating apparatus, the adhesive is appropriately diffused in the outer peripheral portion of the wafer by the step portion formed by the edge trim. Otherwise, bubbles may be generated at the stepped portion. This problem is particularly noticeable when an adhesive having a high viscosity is applied. If it does so, the above-mentioned chipping may occur in the step portion where the adhesive is not properly applied, and the wafer may be damaged.

  This invention is made | formed in view of this point, and it aims at apply | coating the adhesive agent for joining board | substrates appropriately to the surface of one board | substrate.

  In order to achieve the above object, the present invention is an application processing apparatus for applying an adhesive for bonding substrates to the surface of one substrate, the rotation holding unit for holding and rotating the substrate, An adhesive nozzle that supplies the adhesive to the central portion of the substrate held by the rotation holding unit, and the wettability of the adhesive at the outer peripheral portion of the substrate on the outer periphery of the substrate held by the rotation holding unit. And a processing liquid nozzle for supplying a processing liquid to be improved.

  According to the present invention, in a state where the substrate is held and rotated by the rotation holding unit, the adhesive is supplied from the adhesive nozzle to the central portion of the substrate, and the processing liquid is supplied from the processing liquid nozzle to the outer peripheral portion of the substrate. Thus, the wettability of the adhesive at the outer peripheral portion of the substrate is improved. Then, the adhesive supplied to the central part of the substrate diffuses on the surface of the substrate by centrifugal force. In addition, for example, when edge trim is performed on the outer peripheral portion of the substrate, a stepped portion is formed on the outer peripheral portion of the substrate, but even in such a case, the wettability of the outer peripheral portion of the substrate is improved. The adhesive spreads smoothly. Therefore, the adhesive can be appropriately applied to the entire surface of the substrate.

  The treatment liquid may be any one of a solvent for the adhesive, the adhesive, or an adhesive having a viscosity lower than that of the adhesive.

  The coating processing apparatus supplies the adhesive from the adhesive nozzle to the center of the substrate in a state where the substrate is rotated at the first rotation speed by the rotation holding unit, and the processing is performed on the outer peripheral portion of the substrate. A first step of supplying the processing liquid from a liquid nozzle to improve the wettability of the adhesive on the outer peripheral portion of the substrate and diffusing the adhesive over the entire surface of the substrate; And the second step of adjusting the film thickness of the adhesive on the substrate by rotating the substrate at a second rotation speed higher than the first rotation speed by the rotation holding unit, You may have the control part which controls an adhesive agent nozzle and the said process liquid nozzle.

  The said coating processing apparatus may have the test | inspection part which test | inspects the spreading | diffusion of the said adhesive agent on a board | substrate.

  The control unit, when the adhesive diffusing on the substrate reaches the outer peripheral portion of the substrate based on the inspection result from the inspection unit in the first step, to the outer peripheral portion of the substrate The processing liquid nozzle may be controlled to stop the supply of the processing liquid.

  In the outer periphery of the substrate, the outermost surface or the entire outermost side may be removed.

  Another aspect of the present invention is a bonding system including the coating treatment apparatus, the coating treatment apparatus, a heat treatment apparatus that heats the substrate coated with the adhesive to a predetermined temperature, and the adhesive. And a transfer station for transferring a substrate or a superposed substrate to which the substrates are bonded to the coating apparatus, the heat treatment apparatus, and the bonding apparatus. And a loading / unloading station for loading / unloading the substrate or the superposed substrate to / from the processing station.

  According to another aspect of the present invention, there is provided a coating method for applying an adhesive for bonding substrates to a surface of a single substrate, wherein the substrate is rotated while being held by a rotation holding unit. The adhesive is supplied from the adhesive nozzle to the center of the substrate, and the processing liquid is supplied from the processing liquid nozzle to the outer peripheral portion of the substrate to improve the wettability of the adhesive at the outer peripheral portion of the substrate, The adhesive is diffused over the entire surface.

  The treatment liquid may be any one of a solvent for the adhesive, the adhesive, or an adhesive having a viscosity lower than that of the adhesive.

  In a state where the substrate is rotated at the first rotation speed by the rotation holding unit, the adhesive is diffused over the entire surface of the substrate, and then the second rotation faster than the first rotation speed by the rotation holding unit. The substrate may be rotated at a speed to adjust the film thickness of the adhesive on the substrate.

  When diffusing the adhesive on the surface of the substrate, the inspection unit inspects the diffusion of the adhesive on the substrate, and the adhesive that diffuses on the substrate is based on the inspection result from the inspection unit. When the outer peripheral portion is reached, the supply of the processing liquid to the outer peripheral portion of the substrate may be stopped.

  In the outer periphery of the substrate, the outermost surface or the entire outermost side may be removed.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the coating processing apparatus in order to cause the coating processing apparatus to execute the coating processing method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the adhesive agent for joining board | substrates can be apply | coated appropriately on the surface of one board | substrate.

It is a top view which shows the outline of a structure of the joining system concerning this Embodiment. It is a side view which shows the outline of the internal structure of the joining system concerning this Embodiment. It is a side view of a to-be-processed wafer and a support wafer. It is a cross-sectional view which shows the outline of a structure of a joining apparatus. It is a top view which shows the outline of a structure of a delivery part. It is a top view which shows the outline of a structure of a delivery arm. It is a side view which shows the outline of a structure of a delivery arm. It is a top view which shows the outline of a structure of an inversion part. It is a side view which shows the outline of a structure of an inversion part. It is a side view which shows the outline of a structure of an inversion part. It is a side view which shows the outline of a structure of a holding | maintenance arm and a holding member. It is explanatory drawing which shows the positional relationship of a delivery part and an inversion part. It is a side view which shows the outline of a structure of a conveyance part. It is explanatory drawing which shows a mode that the conveyance part was arrange | positioned in the joining apparatus. It is a top view which shows the outline of a structure of a 1st conveyance arm. It is a side view which shows the outline of a structure of a 1st conveyance arm. It is a top view which shows the outline of a structure of a 2nd conveyance arm. It is a side view which shows the outline of a structure of a 2nd conveyance arm. It is explanatory drawing which shows a mode that the notch was formed in the 2nd holding | maintenance part. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a longitudinal cross-sectional view which shows the outline of a structure of a coating processing apparatus. It is a cross-sectional view which shows the outline of a structure of a coating processing apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of the heat processing apparatus. It is a cross-sectional view which shows the outline of a structure of the heat processing apparatus. It is a flowchart which shows the main processes of a joining process. It is explanatory drawing which shows a mode that an adhesive agent is supplied to the center part of a to-be-processed wafer, and a solvent is supplied to an outer peripheral part. It is explanatory drawing which shows a mode that the adhesive agent supplied to the center part of the to-be-processed wafer reached | attained the outer peripheral part. It is explanatory drawing which shows a mode that the adhesive agent was apply | coated to the whole joint surface of the to-be-processed wafer. It is explanatory drawing which shows the outline of a one part structure of the coating processing apparatus concerning other embodiment. It is a side view of the to-be-processed wafer and support wafer concerning other embodiment.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing the outline of the configuration of the joining system 1 according to the present embodiment. FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system 1.

In the bonding system 1, as shown in FIG. 3, for example, a processing target wafer W as a substrate and a support wafer S as a substrate are bonded via an adhesive G. Hereinafter, in the processing target wafer W, a surface bonded to the support wafer S via the adhesive G is referred to as a “bonding surface W _J ” as a surface, and a surface opposite to the bonding surface W _J is defined as a “back surface”. It is referred to as “non-bonding surface W _N ”. Similarly, in the support wafer S, a surface bonded to the processing target wafer W via the adhesive G is referred to as a “bonding surface S _J ” as a surface, and a surface opposite to the bonding surface S _J is defined as a “back surface”. It is referred to as “non-joint surface S _N ”. And in the joining system 1, the to-be-processed wafer W and the support wafer S are joined, and the superposition | polymerization wafer T is formed.

Wafer W is a wafer as a product, for example, a plurality of electronic circuits are formed on the bonding surface W _J, non-bonding surface W _N is polished. Further, the outer peripheral portion of the processing target wafer W is chamfered. Further, so-called edge trim is performed on the processing target wafer W in order to suppress chipping of the outer peripheral portion of the processing target wafer W and suppress damage to the processing target wafer W. This edge trim so that the outer peripheral portion is removed after the polishing process for the processing the wafer W, the outermost surface of the outer peripheral portion is cut stepwise, the stepped trim portion on the outer peripheral portion of the joint surface W _J E is formed. The width B of the trim part E is 400 μm, for example.

  The support wafer S is a wafer having the same diameter as the wafer W to be processed and supporting the wafer W to be processed. In this embodiment, the case where a wafer is used as the support substrate will be described, but another substrate such as a glass substrate may be used.

As shown in FIG. 1, the bonding system 1 includes cassettes C _W , C _S , and C _T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T, respectively. The loading / unloading station 2 for loading / unloading and the processing station 3 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the supporting wafer S, and the overlapped wafer T are integrally connected. .

The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the X direction (vertical direction in FIG. 1). These cassette mounting plates 11, cassettes _C W to the outside of the interface system _1, C S, when loading and unloading the _{C T,} a cassette _{C W,} C S, can be placed on _{C T} . Thus, the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T. The number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. One of the cassettes may be used for collecting defective wafers. That is, this is a cassette that can separate from a normal superposed wafer T a wafer in which a defect occurs in the joining of the processing target wafer W and the supporting wafer S due to various factors. In the present embodiment, among the plurality of cassettes C _T, using a one cassette C _T for the recovery of the fault wafer, and using the other cassette C _T for the accommodation of a normal bonded wafer T.

In the loading / unloading station 2, a wafer transfer unit 20 is provided adjacent to the cassette mounting table 10. The wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the X direction. The wafer transfer device 22 is also movable in the vertical direction and around the vertical axis (θ direction), and includes cassettes C _W , C _S , and C _T on each cassette mounting plate 11 and a third of the processing station 3 to be described later. The to-be-processed wafer W, the support wafer S, and the superposed wafer T can be transferred to and from the transition devices 50 and 51 of the processing block G3.

  The processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, and G3 including various processing apparatuses. For example, a first processing block G1 is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1), and on the back side of the processing station 3 (X direction positive direction side in FIG. 1). A second processing block G2 is provided. Further, a third processing block G3 is provided on the processing station 3 on the side of the loading / unloading station 2 (the Y direction negative direction side in FIG. 1).

  For example, in the first processing block G1, bonding devices 30 to 33 for pressing and bonding the processing target wafer W and the supporting wafer S via the adhesive G are provided in this order from the loading / unloading station 2 side in the Y direction. They are arranged side by side.

  For example, in the second processing block G2, as shown in FIG. 2, a coating processing apparatus 40 that applies the adhesive G to the wafer W to be processed, and the wafer W to which the adhesive G is applied are heated to a predetermined temperature. The heat treatment apparatuses 41 to 43 and the similar heat treatment apparatuses 44 to 46 are arranged in this order in the direction toward the loading / unloading station 2 (the negative direction in the Y direction in FIG. 1). The heat treatment apparatuses 41 to 43 and the heat treatment apparatuses 44 to 46 are provided in three stages in this order from the bottom. The number of heat treatment apparatuses 41 to 46 and the arrangement in the vertical direction and the horizontal direction can be arbitrarily set.

  For example, in the third processing block G3, transition devices 50 and 51 for the processing target wafer W, the supporting wafer S, and the overlapped wafer T are provided in two stages in this order from the bottom.

  As shown in FIG. 1, a wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, a wafer transfer device 61 is disposed in the wafer transfer region 60. Note that the pressure in the wafer transfer region 60 is equal to or higher than atmospheric pressure, and the wafer to be processed W, the support wafer S, and the superposed wafer T are transferred in a so-called atmospheric system in the wafer transfer region 60.

  The wafer transfer device 61 has, for example, a transfer arm that can move around the vertical direction, horizontal direction (Y direction, X direction), and vertical axis. The wafer transfer device 61 moves within the wafer transfer region 60, and moves to a predetermined device in the surrounding first processing block G1, second processing block G2, and third processing block G3. S and superposed wafer T can be conveyed.

  Next, the structure of the joining apparatuses 30 to 33 described above will be described. As shown in FIG. 4, the bonding apparatus 30 includes a processing container 100 that can seal the inside. A loading / unloading port 101 for the wafer W to be processed, the support wafer S, and the overlapped wafer T is formed on the side surface of the processing container 100 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port. Yes.

  The inside of the processing container 100 is partitioned by the inner wall 102 into a preprocessing region D1 and a joining region D2. The loading / unloading port 101 described above is formed on the side surface of the processing container 100 in the preprocessing region D1. In addition, a carry-in / out port 103 for the wafer W to be processed, the support wafer S, and the overlapped wafer T is also formed on the inner wall 102.

  In the pretreatment region D <b> 1, a delivery unit 110 for delivering the processing target wafer W, the support wafer S, and the overlapped wafer T to and from the outside of the bonding apparatus 30 is provided. The delivery unit 110 is disposed adjacent to the loading / unloading port 101. As will be described later, a plurality of, for example, two stages of delivery units 110 are arranged in the vertical direction, and any two of the processing target wafer W, the supporting wafer S, and the overlapped wafer T can be delivered at the same time. For example, the processing target wafer W or the support wafer S before bonding may be delivered by one delivery unit 110, and the superposed wafer T after joining may be delivered by another delivery unit 110. Alternatively, the wafer W to be processed before bonding may be delivered by one delivery unit 110 and the support wafer S before joining may be delivered by another delivery unit 110.

  On the Y direction negative direction side of the pretreatment region D1, that is, the loading / unloading port 103 side, an inversion unit 111 that reverses the front and back surfaces of the support wafer S, for example, is provided vertically above the delivery unit 110. Note that the reversing unit 111 can adjust the horizontal direction of the support wafer S as described later, and can also adjust the horizontal direction of the wafer W to be processed.

  On the Y direction positive direction side of the bonding region D2, a transfer unit 112 that transfers the wafer W, the support wafer S, and the overlapped wafer T to the delivery unit 110, the reversing unit 111, and the bonding unit 113 described later is provided. ing. The transport unit 112 is attached to the loading / unloading port 103.

  On the Y direction negative direction side of the bonding region D2, a bonding portion 113 that presses and bonds the processing target wafer W and the support wafer S via the adhesive G is provided.

  Next, the configuration of the delivery unit 110 described above will be described. As shown in FIG. 5, the delivery unit 110 includes a delivery arm 120 and wafer support pins 121. The delivery arm 120 can deliver the wafer W to be processed, the support wafer S, and the overlapped wafer T to the outside of the bonding apparatus 30, that is, between the wafer transfer device 61 and the wafer support pins 121. The wafer support pins 121 are provided in a plurality of, for example, three locations, and can support the processing target wafer W, the supporting wafer S, and the overlapped wafer T.

  The delivery arm 120 includes an arm unit 130 that holds the processing target wafer W, the support wafer S, and the overlapped wafer T, and an arm driving unit 131 that includes, for example, a motor. The arm part 130 has a substantially disk shape. The arm drive unit 131 can move the arm unit 130 in the X direction (vertical direction in FIG. 5). Moreover, the arm drive part 131 is attached to the rail 132 extended | stretched to a Y direction (left-right direction in FIG. 5), and is comprised so that the movement on the said rail 132 is possible. With this configuration, the delivery arm 120 can move in the horizontal direction (X direction and Y direction), and the wafer W to be processed, the support wafer S, and the overlap between the wafer transfer device 61 and the wafer support pins 121. The wafer T can be delivered smoothly.

  On the arm part 130, as shown in FIGS. 6 and 7, a plurality of, for example, four wafer support pins 140 for supporting the processing target wafer W, the supporting wafer S, and the overlapped wafer T are provided. A guide 141 for positioning the processing target wafer W, the supporting wafer S, and the overlapped wafer T supported by the wafer supporting pins 140 is provided on the arm unit 130. A plurality of guides 141 are provided, for example, at four locations so as to guide the side surfaces of the processing target wafer W, the supporting wafer S, and the overlapped wafer T.

  On the outer periphery of the arm part 130, as shown in FIGS. 5 and 6, notches 142 are formed at, for example, four locations. The notch 142 causes the transfer arm of the wafer transfer device 61 to interfere with the arm unit 130 when the wafer W to be processed, the support wafer S, and the overlapped wafer T are transferred from the transfer arm of the wafer transfer device 61 to the transfer arm 120. Can be prevented.

  The arm part 130 is formed with two slits 143 along the X direction. The slit 143 is formed from the end surface of the arm portion 130 on the wafer support pin 121 side to the vicinity of the center portion of the arm portion 130. The slit 143 can prevent the arm unit 130 from interfering with the wafer support pins 121.

  Next, the configuration of the reversing unit 111 described above will be described. As shown in FIGS. 8 to 10, the reversing unit 111 includes a holding arm 150 that holds the support wafer S and the wafer W to be processed. The holding arm 150 extends in the horizontal direction (X direction in FIGS. 8 and 9). The holding arm 150 is provided with, for example, four holding members 151 for holding the support wafer S and the wafer W to be processed. As shown in FIG. 11, the holding member 151 is configured to be movable in the horizontal direction with respect to the holding arm 150. Further, on the side surface of the holding member 151, a notch 152 for holding the outer periphery of the support wafer S and the wafer W to be processed is formed. These holding members 151 can sandwich and hold the support wafer S and the wafer W to be processed.

  As shown in FIGS. 8 to 10, the holding arm 150 is supported by a first drive unit 153 provided with, for example, a motor. By this first drive unit 153, the holding arm 150 is rotatable about the horizontal axis and can move in the horizontal direction (X direction in FIGS. 8 and 9 and Y direction in FIGS. 8 and 10). The first drive unit 153 may rotate the holding arm 150 about the vertical axis to move the holding arm 150 in the horizontal direction. Below the first drive unit 153, for example, a second drive unit 154 including a motor or the like is provided. By this second driving unit 154, the first driving unit 153 can move in the vertical direction along the support pillar 155 extending in the vertical direction. As described above, the support wafer S and the wafer W to be processed held by the holding member 151 by the first drive unit 153 and the second drive unit 154 can rotate around the horizontal axis and move in the vertical and horizontal directions. it can.

  A position adjustment mechanism 160 that adjusts the horizontal direction of the support wafer S and the wafer W to be processed held by the holding member 151 is supported by the support column 155 via a support plate 161. The position adjustment mechanism 160 is provided adjacent to the holding arm 150.

  The position adjustment mechanism 160 includes a base 162 and a detection unit 163 that detects the positions of the notches of the support wafer S and the wafer W to be processed. The position adjusting mechanism 160 detects the positions of the notch portions of the support wafer S and the wafer W to be processed by the detection unit 163 while moving the support wafer S and the wafer W to be processed held in the holding member 151 in the horizontal direction. Thus, the horizontal orientation of the support wafer S and the wafer W to be processed is adjusted by adjusting the position of the notch portion.

  As shown in FIG. 12, the delivery unit 110 configured as described above is arranged in two stages in the vertical direction, and the reversing unit 111 is arranged vertically above the delivery unit 110. That is, the delivery arm 120 of the delivery unit 110 moves in the horizontal direction below the holding arm 150 and the position adjustment mechanism 160 of the reversing unit 111. Further, the wafer support pins 121 of the delivery unit 110 are disposed below the holding arm 150 of the reversing unit 111.

  Next, the configuration of the transport unit 112 described above will be described. As shown in FIG. 13, the transport unit 112 has a plurality of, for example, two transport arms 170 and 171. The first transfer arm 170 and the second transfer arm 171 are arranged in two stages in this order from the bottom in the vertical direction. The first transfer arm 170 and the second transfer arm 171 have different shapes as will be described later.

  At the base end portions of the transfer arms 170 and 171, for example, an arm driving unit 172 provided with a motor or the like is provided. Each arm 170, 171 can be independently moved in the horizontal direction by the arm driving unit 172. The transfer arms 170 and 171 and the arm driving unit 172 are supported by the base 173.

  The conveyance part 112 is provided in the loading / unloading port 103 formed in the inner wall 102 of the processing container 100 as shown in FIG.4 and FIG.14. The transport unit 112 can be moved in the vertical direction along the loading / unloading port 103 by, for example, a driving unit (not shown) provided with a motor or the like.

The first transfer arm 170 holds and transfers the back surface of the processing target wafer W, the supporting wafer S, and the overlapped wafer T (non-bonding surfaces W _N and S _{N in the} processing target wafer W and the supporting wafer S). As shown in FIG. 15, the first transfer arm 170 has an arm portion 180 whose tip is branched into two tip portions 180 a and 180 a, and a support that is formed integrally with the arm portion 180 and supports the arm portion 180. Part 181.

  On the arm portion 180, as shown in FIGS. 15 and 16, a plurality of resin O-rings 182 are provided, for example, at four locations. The O-ring 182 is in contact with the back surface of the processing target wafer W, the supporting wafer S, and the overlapped wafer T, and the frictional force between the O-ring 182 and the processing target wafer W, the supporting wafer S, and the back surface of the overlapping wafer T is The O-ring 182 holds the back surface of the processing target wafer W, the supporting wafer S, and the overlapped wafer T. The first transfer arm 170 can horizontally hold the processing target wafer W, the supporting wafer S, and the superposed wafer T on the O-ring 182.

  On the arm portion 180, guide members 183 and 184 provided outside the wafer W to be processed, the support wafer S, and the overlapped wafer T held by the O-ring 182 are provided. The first guide member 183 is provided at the distal end of the distal end portion 180 a of the arm portion 180. The second guide member 184 is formed in an arc shape along the outer periphery of the processing target wafer W, the supporting wafer S, and the overlapped wafer T, and is provided on the supporting portion 181 side. These guide members 183 and 184 can prevent the wafer W to be processed, the support wafer S, and the overlapped wafer T from jumping out of the first transfer arm 170 or sliding down. In addition, when the to-be-processed wafer W, the support wafer S, and the overlapped wafer T are held at appropriate positions on the O-ring 182, the to-be-processed wafer W, the support wafer S, and the overlapped wafer T are in contact with the guide members 183 and 184. do not do.

Second transfer arm 171 carries for example the surface of the support wafer S, that is, holding the outer periphery of the joint surface S _J. That is, the second transfer arm 171 holds and conveys the outer periphery of the joint surface S _J of the support wafer S to the front and back surfaces by the reversing unit 111 has been reversed. As shown in FIG. 17, the second transfer arm 171 has an arm portion 190 whose front end branches into two front end portions 190 a and 190 a, and a support that is formed integrally with the arm portion 190 and supports the arm portion 190. Part 191.

On the arm part 190, as shown in FIG.17 and FIG.18, the 2nd holding member 192 is provided in multiple, for example, four places. The second holding member 192 includes a mounting portion 193 for mounting the outer peripheral portion of the joint surface S _J of the support wafer S, extending from the mounting portion 193 upwards, the inner surface from the lower side to the upper side And a taper portion 194 expanding in a taper shape. The mounting portion 193 holds an outer peripheral portion within 1 mm from the peripheral edge of the support wafer S, for example. Further, since the inner side surface of the tapered portion 194 is tapered from the lower side to the upper side, for example, the support wafer S delivered to the second holding member 192 is displaced from a predetermined position in the horizontal direction. In addition, the support wafer S is smoothly guided and positioned by the taper portion 194 and is held by the placement portion 193. The second transfer arm 171 can hold the support wafer S horizontally on the second holding member 192.

  In addition, as shown in FIG. 19, the notch 201a is formed in the 2nd holding | maintenance part 201 of the junction part 113 mentioned later, for example in four places. When the support wafer S is transferred from the second transfer arm 171 to the second holding unit 201, the second holding member 192 of the second transfer arm 171 is moved to the second holding unit 201 by the notch 201a. Interference can be prevented.

  Next, the structure of the junction part 113 mentioned above is demonstrated. As shown in FIG. 20, the bonding unit 113 includes a first holding unit 200 that holds and holds the processing target wafer W on the upper surface, and a second holding unit 201 that holds the supporting wafer S on the lower surface by suction. doing. The first holding unit 200 is provided below the second holding unit 201 and is disposed so as to face the second holding unit 201. That is, the wafer W to be processed held by the first holding unit 200 and the support wafer S held by the second holding unit 201 are arranged to face each other.

  Inside the first holding unit 200, a suction tube 210 for sucking and holding the processing target wafer W is provided. The suction pipe 210 is connected to a negative pressure generator (not shown) such as a vacuum pump. The first holding unit 200 is made of a material having a strength that does not deform even when a load is applied by a pressurizing mechanism 260 described later, for example, a ceramic such as silicon carbide ceramic or aluminum nitride ceramic.

  A heating mechanism 211 that heats the wafer W to be processed is provided inside the first holding unit 200. For the heating mechanism 211, for example, a heater is used.

  Below the first holding unit 200, a moving mechanism 220 that moves the first holding unit 200 and the wafer W to be processed in the vertical direction and the horizontal direction is provided. The moving mechanism 220 can move the first holding unit 200 three-dimensionally with an accuracy of, for example, ± 1 μm. The moving mechanism 220 includes a vertical moving unit 221 that moves the first holding unit 200 in the vertical direction and a horizontal moving unit 222 that moves the first holding unit 200 in the horizontal direction. The vertical moving unit 221 and the horizontal moving unit 222 each have, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw.

  A support member 223 that is extendable in the vertical direction is provided on the horizontal moving part 222. The support member 223 is provided at, for example, three locations outside the first holding unit 200. As shown in FIG. 21, the support member 223 can support the protruding portion 230 provided to protrude downward from the lower surface of the outer periphery of the second holding portion 201.

  In the above moving mechanism 220, the wafer W to be processed on the first holding unit 200 can be aligned in the horizontal direction, and the first holding unit 200 is raised as shown in FIG. A bonding space R for bonding the processing wafer W and the support wafer S can be formed. The joint space R is a space surrounded by the first holding part 200, the second holding part 201, and the protruding part 230. Further, when the bonding space R is formed, the vertical distance between the processing target wafer W and the supporting wafer S in the bonding space R can be adjusted by adjusting the height of the support member 223.

  In addition, below the 1st holding | maintenance part 200, the raising / lowering pin (not shown) for supporting and raising / lowering the to-be-processed wafer W or the superposition | polymerization wafer T from the downward direction is provided. The elevating pin is inserted through a through hole (not shown) formed in the first holding part 200 and can protrude from the upper surface of the first holding part 200.

  For the second holding unit 201, a material having a strength that does not deform even when a load is applied by a pressurizing mechanism 260 described later, for example, a ceramic such as silicon carbide ceramic or aluminum nitride ceramic is used.

  On the outer peripheral lower surface of the second holding portion 201, as shown in FIG. 20, the above-described protruding portion 230 protruding downward from the outer peripheral lower surface is formed. The protruding portion 230 is formed along the outer periphery of the second holding portion 201. Note that the protruding portion 230 may be formed integrally with the second holding portion 201.

  A sealing material 231 for maintaining the airtightness of the joining space R is provided on the lower surface of the protruding portion 230. The sealing material 231 is provided in an annular shape in a groove formed on the lower surface of the protrusion 230, and an O-ring is used, for example. Moreover, the sealing material 231 has elasticity. Note that the sealing material 231 may be any component having a sealing function, and is not limited to this embodiment.

  A suction tube 240 for sucking and holding the support wafer S is provided inside the second holding unit 201. The suction tube 240 is connected to a negative pressure generator (not shown) such as a vacuum pump.

  In addition, an intake pipe 241 for taking in the atmosphere of the joint space R is provided inside the second holding unit 201. One end of the intake pipe 241 opens at a place where the support wafer S is not held on the lower surface of the second holding unit 201. The other end of the intake pipe 241 is connected to a negative pressure generator (not shown) such as a vacuum pump.

  Furthermore, a heating mechanism 242 for heating the support wafer S is provided inside the second holding unit 201. For the heating mechanism 242, for example, a heater is used.

  A support member 250 that supports the second holding unit 201 and a pressurizing mechanism 260 that presses the second holding unit 201 vertically downward are provided on the upper surface of the second holding unit 201. The pressurizing mechanism 260 includes a pressure vessel 261 provided so as to cover the processing target wafer W and the support wafer S, and a fluid supply pipe 262 that supplies a fluid, for example, compressed air, to the inside of the pressure vessel 261. Yes. The support member 250 is configured to be extendable in the vertical direction, and is provided at, for example, three locations outside the pressure vessel 261.

  The pressure vessel 261 is configured by, for example, a stainless steel bellows that is extendable in the vertical direction. The lower surface of the pressure vessel 261 is in contact with the upper surface of the second holding unit 201, and the upper surface is in contact with the lower surface of the support plate 263 provided above the second holding unit 201. The fluid supply pipe 262 has one end connected to the pressure vessel 261 and the other end connected to a fluid supply source (not shown). Then, by supplying fluid from the fluid supply pipe 262 to the pressure vessel 261, the pressure vessel 261 extends. At this time, since the upper surface of the pressure vessel 261 and the lower surface of the support plate 263 are in contact with each other, the pressure vessel 261 extends only in the downward direction, and the second holding portion 201 provided on the lower surface of the pressure vessel 261 is moved downward. Can be pressed. At this time, since the inside of the pressure vessel 261 is pressurized by the fluid, the pressure vessel 261 can press the second holding part 201 uniformly in the surface. Adjustment of the load when pressing the second holding unit 201 is performed by adjusting the pressure of the compressed air supplied to the pressure vessel 261. Note that the support plate 263 is preferably formed of a member having a strength that does not deform even when the pressure mechanism 260 receives a reaction force of a load applied to the second holding unit 201. Note that the support plate 263 of this embodiment may be omitted, and the upper surface of the pressure vessel 261 may be in contact with the ceiling surface of the processing vessel 100.

  In addition, since the structure of the joining apparatuses 31-33 is the same as that of the structure of the joining apparatus 30 mentioned above, description is abbreviate | omitted.

  Next, the configuration of the above-described coating processing apparatus 40 will be described. As shown in FIG. 22, the coating processing apparatus 40 has a processing container 270 capable of sealing the inside. A loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 270 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  A spin chuck 280 serving as a rotation holding unit that holds and rotates the wafer W to be processed is provided at the center of the processing container 270. The spin chuck 280 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W to be processed is provided on the upper surface, for example. The wafer W to be processed can be sucked and held on the spin chuck 280 by suction from the suction port.

  Below the spin chuck 280, for example, a chuck drive unit 281 provided with a motor or the like is provided. The spin chuck 280 can be rotated at a predetermined speed by the chuck driving unit 281. Further, the chuck driving unit 281 is provided with an elevating drive source such as a cylinder, and the spin chuck 280 can be moved up and down.

  Around the spin chuck 280, there is provided a cup 282 that receives and collects the liquid scattered or dropped from the wafer W to be processed. Connected to the lower surface of the cup 282 are a discharge pipe 283 for discharging the collected liquid and an exhaust pipe 284 for evacuating and exhausting the atmosphere in the cup 282.

  As shown in FIG. 23, a rail 290 extending along the Y direction (left-right direction in FIG. 23) is formed on the negative side of the cup 282 in the X direction (downward direction in FIG. 23). The rail 290 is formed, for example, from the outside of the cup 282 on the Y direction negative direction (left direction in FIG. 23) side to the outside of the Y direction positive direction (right direction in FIG. 23) side. An arm 291 is attached to the rail 290.

  The arm 291 supports an adhesive nozzle 292 that supplies a liquid adhesive G to the processing target wafer W as shown in FIGS. The arm 291 is movable on the rail 290 by a nozzle driving unit 293 shown in FIG. As a result, the adhesive nozzle 292 can move from the standby part 294 installed on the outer side of the Y direction positive side of the cup 282 to the upper part of the center of the wafer W to be processed in the cup 282, and further the wafer W to be processed It can move in the radial direction of the wafer W to be processed. The arm 291 can be moved up and down by a nozzle driving unit 293, and the height of the adhesive nozzle 292 can be adjusted.

  A supply pipe 295 for supplying the adhesive G to the adhesive nozzle 292 is connected to the adhesive nozzle 292 as shown in FIG. The supply pipe 295 communicates with an adhesive supply source 296 that stores the adhesive G therein. Further, the supply pipe 295 is provided with a supply device group 297 including a valve for controlling the flow of the adhesive G, a flow rate adjusting unit, and the like.

  Further, as shown in FIG. 23, a rail 300 extending along the Y direction (left and right direction in FIG. 23) is formed between the cup 282 and the rail 290. The rail 300 is formed, for example, from the outside of the cup 282 on the Y direction negative direction (left direction in FIG. 23) side to the vicinity of the center of the cup 282. An arm 301 is attached to the rail 300.

  As shown in FIGS. 22 and 23, the arm 301 supports a solvent nozzle 302 as a processing liquid nozzle that supplies a solvent of the adhesive G as a processing liquid to the wafer W to be processed. The arm 301 is movable on the rail 300 by a nozzle driving unit 303 shown in FIG. As a result, the solvent nozzle 302 can move from the standby part 304 installed outside the Y direction negative side of the cup 282 to above the outer peripheral part of the wafer W to be processed in the cup 282, and further on the wafer W to be processed. Can be moved in the radial direction of the wafer W to be processed. The arm 301 can be moved up and down by a nozzle drive unit 303 and the height of the solvent nozzle 302 can be adjusted.

  A supply pipe 305 that supplies the solvent of the adhesive G to the solvent nozzle 302 is connected to the solvent nozzle 302 as shown in FIG. The supply pipe 305 communicates with a solvent supply source 306 that stores the solvent of the adhesive G therein. The supply pipe 305 is provided with a supply device group 307 including a valve that controls the flow of the solvent of the adhesive G, a flow rate adjusting unit, and the like. For example, organic thinner is used as the solvent for the adhesive G.

  In this embodiment, the arm 291 that supports the adhesive nozzle 292 and the arm 301 that supports the solvent nozzle 302 are attached to separate rails 290 and 300, respectively, but may be attached to the same rail. Good. The adhesive nozzle 292 and the solvent nozzle 302 are supported by separate arms 291 and 301, respectively, but may be supported by the same arm.

  Next, the structure of the heat processing apparatus 41-46 mentioned above is demonstrated. As shown in FIG. 24, the heat treatment apparatus 41 has a processing container 310 that can be closed. A loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 310 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  A gas supply port 311 for supplying an inert gas such as nitrogen gas into the processing container 310 is formed on the ceiling surface of the processing container 310. A gas supply pipe 313 communicating with the gas supply source 312 is connected to the gas supply port 311. The gas supply pipe 313 is provided with a supply device group 314 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like.

  An air inlet 315 for sucking the atmosphere inside the processing container 310 is formed on the bottom surface of the processing container 310. An intake pipe 317 that communicates with a negative pressure generator 316 such as a vacuum pump is connected to the intake port 315.

  Inside the processing container 310, a heating unit 320 that heat-processes the processing target wafer W and a temperature control unit 321 that controls the temperature of the processing target wafer W are provided. The heating unit 320 and the temperature adjustment unit 321 are arranged side by side in the Y direction.

  The heating unit 320 includes an annular holding member 331 that houses the hot plate 330 and holds the outer peripheral portion of the hot plate 330, and a substantially cylindrical support ring 332 that surrounds the outer periphery of the holding member 331. The hot plate 330 has a thick, substantially disk shape, and can place and heat the wafer W to be processed. The hot plate 330 includes a heater 333, for example. The heating temperature of the hot plate 330 is controlled by the control unit 370, for example, and the wafer W to be processed placed on the hot plate 330 is heated to a predetermined temperature.

  Below the heat plate 330, for example, three elevating pins 340 for supporting the wafer W to be processed from below and elevating it are provided. The elevating pin 340 can be moved up and down by the elevating drive unit 341. Near the central portion of the hot plate 330, through holes 342 that penetrate the hot plate 330 in the thickness direction are formed, for example, at three locations. The elevating pins 340 are inserted through the through holes 342 and can protrude from the upper surface of the heat plate 330.

  The temperature adjustment unit 321 has a temperature adjustment plate 350. As shown in FIG. 25, the temperature control plate 350 has a substantially square flat plate shape, and the end surface on the heat plate 330 side is curved in an arc shape. Two slits 351 along the Y direction are formed in the temperature adjustment plate 350. The slit 351 is formed from the end surface of the temperature adjustment plate 350 on the hot plate 330 side to the vicinity of the center portion of the temperature adjustment plate 350. The slit 351 can prevent the temperature adjustment plate 350 from interfering with the elevation pins 340 of the heating unit 320 and the elevation pins 360 of the temperature adjustment unit 321 described later. The temperature adjustment plate 350 incorporates a temperature adjustment member (not shown) such as a Peltier element. The cooling temperature of the temperature adjustment plate 350 is controlled by the control unit 370, for example, and the wafer W to be processed placed on the temperature adjustment plate 350 is cooled to a predetermined temperature.

  The temperature adjustment plate 350 is supported by a support arm 352 as shown in FIG. A drive unit 353 is attached to the support arm 352. The drive unit 353 is attached to a rail 354 extending in the Y direction. The rail 354 extends from the temperature adjustment unit 321 to the heating unit 320. With this drive unit 353, the temperature adjustment plate 350 can move between the heating unit 320 and the temperature adjustment unit 321 along the rail 354.

  Below the temperature control plate 350, for example, three elevating pins 360 for supporting the wafer W to be processed from below and elevating it are provided. The raising / lowering pin 360 can be moved up and down by the raising / lowering drive part 361. The elevating pin 360 is inserted through the slit 351 and can protrude from the upper surface of the temperature adjustment plate 350.

  In addition, since the structure of the heat processing apparatuses 42-46 is the same as that of the heat processing apparatus 41 mentioned above, description is abbreviate | omitted.

  Moreover, in the heat treatment apparatuses 41 to 46, the temperature of the superposed wafer T can also be adjusted. Further, the bonding system 1 may be provided with a temperature adjusting device (not shown) in order to adjust the temperature of the superposed wafer T. The temperature adjustment device has the same configuration as the heat treatment device 41 described above, and a temperature adjustment plate is used instead of the hot plate 330. A cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature.

  The above joining system 1 is provided with a control unit 370 as shown in FIG. The control unit 370 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the processing target wafer W, the supporting wafer S, and the overlapped wafer T in the bonding system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize the below-described joining process in the joining system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. It may have been installed in the control unit 370 from the storage medium H.

  Next, a method for joining the processing target wafer W and the supporting wafer S performed using the joining system 1 configured as described above will be described. FIG. 26 is a flowchart showing an example of main steps of the joining process.

First, a cassette C _W housing a plurality of the processed the wafer _W, the cassette C _S accommodating a plurality of support wafer _S, and an empty cassette C _T is a predetermined cassette mounting plate 11 of the carry-out station 2 Placed. Thereafter, the wafer _W to be processed in the cassette CW is taken out by the wafer transfer device 22 and transferred to the transition device 50 of the third processing block G3 of the processing station 3. At this time, the wafer W to be processed is transported with its non-bonding surface W _N facing downward.

Next, the processing target wafer W is transferred to the coating processing apparatus 40 by the wafer transfer apparatus 61. The wafer W to be processed loaded into the coating processing apparatus 40 is transferred from the wafer transfer apparatus 61 to the spin chuck 280 and is sucked and held. At this time, the non-bonding surface W _N of the wafer W is held by suction.

Subsequently, the arm 291 moves the adhesive nozzle 292 of the standby unit 294 to above the center of the wafer W to be processed, and the arm 301 moves the solvent nozzle 302 of the standby unit 304 to above the outer periphery of the wafer W to be processed. Move. In addition, the outer peripheral part in this Embodiment is a range which covers the trim part E at least as shown in FIG. 27, Comprising: For example, the distance L from the outer surface of the to-be-processed wafer W is a range used as 10 mm. The solvent nozzle 302 is disposed at a position capable of supplying the solvent H to the outer peripheral portion W _E.

Then, wafer W the first rotational speed by the spin chuck 280, for example, while rotating at 350 rpm, the adhesive in the center of the joint surface W _J of wafer W from the glue nozzle 292 as shown in FIG. 27 supplies G, supplying solvent H on the outer peripheral portion _{W E} of the joint surface _{W J} from the solvent nozzle 302. Adhesive G supplied to the central portion of the joint surface W _J spreads the bonding surface W _J of wafer W outwardly by centrifugal force. Also, diffused in a direction outwardly solvent H supplied to the outer peripheral portion W _E of the joint surface W _J also by centrifugal force, wettability of the adhesive G at the outer peripheral portion W _E is improved. Note that the timing for starting the supply of the solvent H from the solvent nozzle 302 may not be the same as the timing for starting the supply of the adhesive G from the adhesive nozzle 292. The supply start of the solvent H may be before the supply start of the adhesive G or after the supply start of the adhesive G. When the adhesive G as described below to reach the outer peripheral portion W _E, it is the solvent H has only to diffuse to the outer peripheral portion W _E.

When the adhesive G as shown in FIG. 28 to reach the outer peripheral portion W _E, stops the supply of the solvent H from the solvent nozzle 302. The adhesive G is also the trim portion E is not formed on the outer peripheral portion W _E, smoothly diffuse the outer peripheral portion W _E with improved wettability by solvents H.

Thereafter, when the adhesive G as shown in FIG. 29 to diffuse to the entire surface of the bonding surface W _J of wafer W, to accelerate rotation of the rotation of the wafer W by the spin chuck 280, higher than the first rotation speed No. The wafer W to be processed is rotated at a rotation speed of 2, for example, 1175 rpm. Thus, by rotating the wafer W to be processed at a high speed, the adhesive G on the wafer W to be processed is flattened, and the film thickness is adjusted to a desired film thickness. Thus, the adhesive G is properly applied to the bonding surface W _J of the processing target wafer W (step A1 in FIG. 26).

  Next, the wafer W to be processed is transferred to the heat treatment apparatus 41 by the wafer transfer apparatus 61. At this time, the inside of the heat treatment apparatus 41 is maintained in an inert gas atmosphere. When the wafer W to be processed is loaded into the heat treatment apparatus 41, the superposed wafer T is transferred from the wafer transfer apparatus 61 to the lift pins 360 that have been lifted and waited in advance. Subsequently, the lift pins 360 are lowered, and the wafer W to be processed is placed on the temperature adjustment plate 350.

  Thereafter, the temperature adjustment plate 350 is moved along the rail 354 to the upper side of the heat plate 330 by the drive unit 353, and the wafer W to be processed is transferred to the lift pins 340 that have been lifted and waited in advance. Thereafter, the elevating pins 340 are lowered, and the processing target wafer W is placed on the hot plate 330. And the to-be-processed wafer W on the hot platen 330 is heated to predetermined temperature, for example, 100 degreeC-300 degreeC (process A2 of FIG. 26). By performing the heating by the hot plate 330, the adhesive G on the wafer W to be processed is heated and the adhesive G is cured.

  Thereafter, the elevating pins 340 are raised, and the temperature adjusting plate 350 is moved above the hot plate 330. Subsequently, the wafer W to be processed is transferred from the lift pins 340 to the temperature adjustment plate 350, and the temperature adjustment plate 350 moves to the wafer transfer region 60 side. During the movement of the temperature adjustment plate 350, the temperature of the processing target wafer W is adjusted to a predetermined temperature.

  The wafer W to be processed that has been heat-treated by the heat treatment apparatus 41 is transferred to the bonding apparatus 30 by the wafer transfer apparatus 61. The wafer W to be processed transferred to the bonding apparatus 30 is transferred from the wafer transfer apparatus 61 to the transfer arm 120 of the transfer unit 110 and then transferred from the transfer arm 120 to the wafer support pins 121. Thereafter, the wafer W to be processed is transferred from the wafer support pins 121 to the reversing unit 111 by the first transfer arm 170 of the transfer unit 112.

  The wafer to be processed W transferred to the reversing unit 111 is held by the holding member 151 and moved to the position adjusting mechanism 160. Then, the position adjustment mechanism 160 adjusts the position of the notch portion of the wafer to be processed W to adjust the horizontal direction of the wafer to be processed W (step A3 in FIG. 26).

Thereafter, the wafer W to be processed is transferred from the reversing unit 111 to the bonding unit 113 by the first transfer arm 170 of the transfer unit 112. The to-be-processed wafer W conveyed by the junction part 113 is mounted in the 1st holding | maintenance part 200 (process A4 of FIG. 26). On the first holding portion 200, a state where the bonding surface W _J of wafer W is facing upward, i.e. wafer W in a state where the adhesive G is facing upward is placed.

  While the processes A1 to A4 described above are performed on the processing target wafer W, the supporting wafer S is processed following the processing target wafer W. The support wafer S is transferred to the bonding apparatus 30 by the wafer transfer device 61. In addition, about the process in which the support wafer S is conveyed to the joining apparatus 30, since it is the same as that of the said embodiment, description is abbreviate | omitted.

  The support wafer S transferred to the bonding apparatus 30 is transferred from the wafer transfer apparatus 61 to the transfer arm 120 of the transfer unit 110 and then transferred from the transfer arm 120 to the wafer support pins 121. Thereafter, the support wafer S is transferred from the wafer support pins 121 to the reversing unit 111 by the first transfer arm 170 of the transfer unit 112.

The support wafer S transferred to the reversing unit 111 is held by the holding member 151 and moved to the position adjusting mechanism 160. Then, the position adjustment mechanism 160 adjusts the position of the notch portion of the support wafer S to adjust the horizontal direction of the support wafer S (step A5 in FIG. 26). The support wafer S whose horizontal direction has been adjusted is moved in the horizontal direction from the position adjustment mechanism 160 and moved upward in the vertical direction, and then the front and back surfaces thereof are reversed (step A6 in FIG. 26). That is, the bonding surface S _J of the support wafer S is directed downward.

Thereafter, the support wafer S is moved downward in the vertical direction, and then transferred from the reversing unit 111 to the bonding unit 113 by the second transfer arm 171 of the transfer unit 112. In this case, second transfer arm 171, since it holds only the outer peripheral portion of the joint surface S _J of the support wafer S, for example, that the joint surface S _J is soiled by particles or the like adhering to the second transfer arm 171 There is no. The support wafer S transferred to the bonding unit 113 is sucked and held by the second holding unit 201 (step A7 in FIG. 26). In the second holding portion 201, the supporting wafer S is held in a state where the bonding surfaces S _J is directed downward of the support wafer S.

  In the bonding apparatus 30, when the processing target wafer W and the support wafer S are held by the first holding unit 200 and the second holding unit 201, respectively, a moving mechanism is provided so that the processing target wafer W faces the support wafer S. The horizontal position of the first holding unit 200 is adjusted by 220 (step A8 in FIG. 26).

  Next, the first holding unit 200 is lifted by the moving mechanism 220 and the support member 223 is extended to support the second holding unit 201 by the support member 223. At this time, by adjusting the height of the support member 223, the vertical distance between the wafer to be processed W and the support wafer S is adjusted to a predetermined distance (step A9 in FIG. 26). In this way, a sealed joint space R is formed between the first holding part 200 and the second holding part 201.

Thereafter, the atmosphere in the joining space R is sucked from the suction pipe 241 to a predetermined degree of vacuum. Then, by adjusting the height of the support member 223, it is brought into contact with bonding surface S _J entire bonding surface W _J entire the support wafer S to be processed wafer W. Then, the processing target wafer W and the support wafer S are bonded by the adhesive G. At this time, since the bonding space R is maintained at a predetermined degree of vacuum, generation of voids between the processing target wafer W and the support wafer S can be suppressed. At this time, the sealing material 231 is elastically deformed, and the first holding unit 200 and the second holding unit 201 are in close contact with each other. Then, while heating the processing target wafer W and the support wafer S at a predetermined temperature, for example, 200 ° C. by the heating mechanisms 211 and 242, the second holding unit 201 is pressed downward with a predetermined pressure by the pressure mechanism 260. Then, the wafer W to be processed and the support wafer S are more firmly bonded and bonded (step A10 in FIG. 26).

  The overlapped wafer T in which the processing target wafer W and the support wafer S are bonded is transferred from the bonding unit 110 to the delivery unit 110 by the first transfer arm 170 of the transfer unit 112. The overlapped wafer T transferred to the transfer unit 110 is transferred to the transfer arm 120 via the wafer support pins 121, and further transferred from the transfer arm 120 to the wafer transfer device 61.

Next, the superposed wafer T is transferred to the heat treatment device 42 by the wafer transfer device 61. In the heat treatment apparatus 42, the temperature of the superposed wafer T is adjusted to a predetermined temperature, for example, normal temperature (23 ° C.). Thereafter, bonded wafer T is transferred to the transition unit 51 by the wafer transfer apparatus 61, as by the wafer transfer apparatus 22 of the subsequent unloading station 2 is transported to the cassette C _T of predetermined cassette mounting plate 11. In this way, a series of bonding processing of the processing target wafer W and the supporting wafer S is completed.

According to the above embodiment, the adhesive G is supplied from the adhesive nozzle 292 to the central portion of the wafer W to be processed while the wafer W to be processed is held and rotated by the spin chuck 280 in Step A1. supplies a solvent H from the solvent nozzle 302 to the outer peripheral portion W _E of the processing the wafer W, thereby improving the wettability of the adhesive G at the outer peripheral portion W _E of the treated wafer W. Then, the adhesive G supplied to the central portion of the wafer W is diffused bonding surface W _J by the centrifugal force, to smoothly diffuse the further wetting of improved peripheral portion W _E. Therefore, it is possible to properly apply the adhesive G on the bonding surface W _J entire treated wafer W.

In addition the step A1, rotating at low speed the wafer W at a first rotational speed to diffuse the adhesive G on the bonding surface W _J entire surface, then treated at a faster than the first rotational speed second rotational speed the wafer W is rotated at a high speed and regulate the thickness of the adhesive G on joint surface W _J. Therefore, it is possible to more appropriately apply adhesive G at a desired thickness on the bonding surface W _J entire treated wafer W.

  Further, since the bonding system 1 includes the bonding devices 30 to 33, the coating processing device 40, and the heat treatment devices 41 to 46, the processing target wafer W is sequentially processed and the adhesive G is applied to the processing target wafer W. Then, the bonding apparatus 30 inverts the front and back surfaces of the support wafer S. Thereafter, in the bonding apparatus 30, the wafer W to be processed which has been applied with the adhesive G and heated to a predetermined temperature is bonded to the support wafer S whose front and back surfaces are reversed. As described above, according to the present embodiment, the processing target wafer W and the supporting wafer S can be processed in parallel. Further, while the wafer to be processed W and the support wafer S are bonded in the bonding apparatus 30, another wafer to be processed W and the support wafer S can be processed in the coating processing apparatus 40, the heat treatment apparatus 41, and the bonding apparatus 31. . Therefore, the wafer W to be processed and the support wafer S can be bonded efficiently, and the throughput of the bonding process can be improved.

The coating processing apparatus 30 of the above embodiment is provided with an inspection unit 400 that inspects the state in which the adhesive G on the processing target wafer W held by the spin chuck 280 is diffused, as shown in FIG. Also good. For the inspection unit 400, for example, a capacitance sensor is used. Capacitive sensor can detect the electrostatic capacitance between the adhesive G on joint surface W _J or joining surface W _J of the processing target wafer W. And the value of the capacitance, i.e. the distance between the electrostatic capacitive sensor and the object to be processed the wafer W, the presence of adhesive G on joint surface W _J is detected. The inspection unit 400 may use other inspection means, for example, a CCD camera.

In this case, in step A1, it is inspected by the inspection unit 400 a manner in which the adhesive G supplied to the central portion of the joint surface W _J of wafer W to diffuse the bonding surface W _J. Then, when the adhesive G were tested to have reached the outer peripheral portion W _E by the inspection unit 400 to stop the supply of the solvent H from the solvent nozzle 302. Then the adhesive G is smoothly diffused outer peripheral portion W _E with improved wettability by solvents H.

According to this embodiment, it is possible to reliably know when the adhesive G has reached the outer peripheral portion W _E by the inspection unit 400 to stop the supply of the solvent H from the solvent nozzle 302 at the right time be able to. Thus, then without the solvent H is supplied onto the adhesive G for spreading the outer peripheral portion W _E, it is possible to more appropriately apply adhesive G on the bonding surface W _J of the processing target wafer W.

In the above embodiment, in the coating process of the adhesive G in step A1, it was used solvent H glue G as a processing liquid supplied to the outer peripheral portion W _E, may be other treatment liquid. For example, an adhesive G may be used as the treatment liquid, or an adhesive having a lower viscosity than the adhesive G may be used. In any case, it is possible to improve the wettability of the adhesive G at the outer peripheral portion W _E, it is possible to properly apply the adhesive G on the bonding surface W _J of the processing target wafer W. In this case, instead of the solvent nozzle 302, an adhesive nozzle as a treatment liquid nozzle for supplying the adhesive G or a low-viscosity adhesive is used.

In the coating apparatus 30 of the above embodiment, the solvent H has been to improve the wettability of the outer peripheral portion W _E, the side surface or the non-bonding surface W of the wafer W such solvents H supplied from the solvent nozzle 302 You may use in order to remove the unnecessary adhesive agent G adhering to _N. In the coating apparatus 30, below the spin chuck 280, it may be back rinse nozzle (not shown) is provided for injecting the cleaning liquid toward the non-bonding surface W _N of the processed wafers W. The non-bonded surface W _N and the side surface of the wafer W to be processed are cleaned by the cleaning liquid sprayed from the back rinse nozzle.

In the above embodiments, pre-edge trim is made to be processed the wafer W, but the outermost surface of the outer peripheral portion W _E had been scraped stepped, edge trim is performed as shown in FIG. 31 Te, the entire outermost (dotted line in the figure) may be removed in the peripheral portion W _E. In such a case, the coating treatment unit 30 supplies the adhesive G in the center of the wafer W being rotated, to supply the solvent H on the outer peripheral portion W _E of the wafer W, the outer peripheral portion W _E Improves the wettability of the adhesive G. Then, the adhesive G supplied to the central portion of the wafer W is diffused bonding surface W _J by the centrifugal force, to smoothly diffuse the further wetting of improved peripheral portion W _E. Therefore, it is possible to properly apply the adhesive G on the bonding surface W _J entire treated wafer W.

  Moreover, although the above embodiment demonstrated the case where the to-be-processed wafer W by which the edge trim was performed previously was demonstrated, the edge coating was not performed in the coating-application processing apparatus and coating processing method of this invention. It can also be applied to wafers to be processed. An adhesive can be appropriately applied to such a wafer to be processed.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.

DESCRIPTION OF SYMBOLS 1 Bonding system 2 Carrying in / out station 3 Processing station 30-33 Bonding apparatus 40 Coating processing apparatus 41-46 Heat processing apparatus 60 Wafer conveyance area 280 Spin chuck 292 Adhesive nozzle 302 Solvent nozzle 370 Control part 400 Inspection part E Trim part G Adhesive H Solvent S Support wafer T Superposition wafer W Processed wafer

Claims (14)

An application processing apparatus for applying an adhesive for bonding substrates to the surface of one substrate,
A rotation holding unit for holding and rotating the substrate;
An adhesive nozzle for supplying the adhesive to the center of the substrate held by the rotation holding unit;
A coating processing apparatus comprising: a processing liquid nozzle that supplies a processing liquid for improving the wettability of the adhesive in the outer peripheral portion of the substrate to the outer peripheral portion of the substrate held by the rotation holding unit. . The coating treatment apparatus according to claim 1, wherein the treatment liquid is one of a solvent for the adhesive, the adhesive, or an adhesive having a viscosity lower than that of the adhesive. In a state where the substrate is rotated at the first rotation speed by the rotation holding unit, the adhesive is supplied from the adhesive nozzle to the central portion of the substrate, and the processing liquid is supplied from the processing liquid nozzle to the outer peripheral portion of the substrate. To improve the wettability of the adhesive at the outer peripheral portion of the substrate and diffuse the adhesive over the entire surface of the substrate, and then the first rotation by the rotation holding unit And rotating the substrate at a second rotation speed higher than the speed to adjust the film thickness of the adhesive on the substrate, and performing the rotation holding unit, the adhesive nozzle, and the processing. The coating processing apparatus according to claim 1, further comprising a control unit that controls the liquid nozzle. The coating processing apparatus according to claim 3, further comprising an inspection unit that inspects diffusion of the adhesive on the substrate. The control unit, when the adhesive diffusing on the substrate reaches the outer peripheral portion of the substrate based on the inspection result from the inspection unit in the first step, to the outer peripheral portion of the substrate The coating processing apparatus according to claim 4, wherein the processing liquid nozzle is controlled to stop the supply of the processing liquid. The coating processing apparatus according to claim 1, wherein the outermost surface of the substrate or the entire outermost surface is removed from the outer peripheral portion of the substrate. A joining system comprising the coating treatment apparatus according to any one of claims 1 to 6,
The coating treatment apparatus, a heat treatment apparatus that heats the substrate coated with the adhesive to a predetermined temperature, a bonding apparatus that joins the substrates together via the adhesive, the coating treatment apparatus, the heat treatment apparatus, and the A processing station having a transfer area for transferring a substrate or a superposed substrate in which the substrates are bonded to each other with respect to the bonding apparatus,
And a loading / unloading station for loading / unloading a substrate or a superposed substrate to / from the processing station. An application method for applying an adhesive for bonding substrates to the surface of one substrate,
In a state where the substrate is held and rotated by the rotation holding unit, the adhesive is supplied from the adhesive nozzle to the central portion of the substrate, and the processing liquid is supplied from the processing liquid nozzle to the outer peripheral portion of the substrate. A coating treatment method comprising improving the wettability of the adhesive at the outer peripheral portion of the substrate and diffusing the adhesive over the entire surface of the substrate. 9. The coating treatment method according to claim 8, wherein the treatment liquid is one of a solvent for the adhesive, the adhesive, or an adhesive having a viscosity lower than that of the adhesive. In a state where the substrate is rotated at the first rotation speed by the rotation holding unit, the adhesive is diffused over the entire surface of the substrate, and then the second rotation faster than the first rotation speed by the rotation holding unit. The coating treatment method according to claim 8 or 9, wherein the substrate is rotated at a speed to adjust a film thickness of the adhesive on the substrate. When diffusing the adhesive on the surface of the substrate, the inspection unit inspects the diffusion of the adhesive on the substrate, and the adhesive that diffuses on the substrate is based on the inspection result from the inspection unit. The coating treatment method according to claim 8, wherein when the outer peripheral portion is reached, the supply of the processing liquid to the outer peripheral portion of the substrate is stopped. 12. The coating treatment method according to claim 8, wherein the outermost surface of the substrate or the entire outermost surface of the substrate is removed. A program that operates on a computer of a control unit that controls the coating processing apparatus in order to cause the coating processing apparatus to execute the coating processing method according to any one of claims 8 to 12. A readable computer storage medium storing the program according to claim 13.

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