JP2013120903A - Peeling device, peeling system, peeling method, program, and computer storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To properly perform the peeling process of a processed substrate and a support substrate.SOLUTION: A peeling device 30 includes: a first holding part 110 holding a processed wafer W; a second holding part 111 holding a support wafer S; a moving mechanism 170 moving the second holding part 111 in a horizontal direction; multiple laser sensors 140, each of which measures the displacement of a surface of the second holding part 111 moved by the moving mechanism 170; multiple load cells 160, each of which measures a load acting on the first holding part 110 or the second holding part 111; and a control part which adjusts the position of the second holding part 111 on the basis of the measurement results of the multiple laser sensors 140 so that the displacement is equalized on the surface and also adjusts the position of the first holding part 110 on the basis of the measurement results of the multiple load cells 160 so that the load is equalized on the surface.

Description

  The present invention relates to a peeling device that peels a superposed substrate from a substrate to be processed and a support substrate, a peeling system including the peeling device, a peeling method using the peeling device, a program, and a computer storage medium.

  In recent years, for example, in semiconductor device manufacturing processes, semiconductor wafers (hereinafter referred to as “wafers”) have become larger in diameter. Further, in a specific process such as mounting, it is required to make the wafer thinner. Here, for example, when a thin wafer having a large diameter is transported or polished as it is, the wafer may be warped or cracked. For this reason, in order to reinforce the wafer, for example, the wafer is attached to a wafer or a glass substrate which is a support substrate. Then, after a predetermined process such as a wafer polishing process is performed in a state where the wafer and the support substrate are bonded in this way, the wafer and the support substrate are peeled off.

  The wafer and the support substrate are peeled off using, for example, a peeling device. The peeling apparatus includes, for example, a first holder that holds a wafer, a second holder that holds a support substrate, and a nozzle that ejects liquid between the wafer and the support substrate. In this peeling apparatus, the liquid is applied between the wafer bonded from the nozzle and the support substrate with an injection pressure larger than the bonding strength between the wafer and the support substrate, preferably at least twice as large as the bonding strength. The wafer and the support substrate are peeled off by spraying (Patent Document 1).

JP-A-9-167724

  However, when the peeling apparatus described in Patent Document 1 is used, the liquid is ejected with a large ejection pressure. Therefore, if the liquid ejection direction slightly deviates from a predetermined direction, the wafer or the support substrate may be damaged. It was. In particular, since the wafer is thin, it is easily damaged.

  In view of this, the inventors tried to move at least the first holder or the second holder in the horizontal direction to separate the wafer and the support substrate.

  However, the wafer and the support substrate are bonded to each other through, for example, an adhesive, and the thickness of the adhesive is thin. That is, the distance between the bonded wafer and the support substrate is small. In such a case, if the parallelism of the first holder or the second holder is slightly shifted, the wafer or the support substrate may be damaged. In particular, when a device such as an electronic circuit formed on the surface of the wafer is damaged, the device does not perform its function, and there is a risk of serious damage to the product.

  This invention is made | formed in view of this point, and aims at performing the peeling process of a to-be-processed substrate and a support substrate appropriately.

  In order to achieve the above object, the present invention is a peeling apparatus for peeling a polymerized substrate in which a substrate to be processed and a support substrate are bonded with an adhesive to the substrate to be processed and the support substrate, and holds the substrate to be processed. A first holding unit; a second holding unit that holds a support substrate; a moving mechanism that moves the first holding unit or the second holding unit in a horizontal direction; and the moving mechanism that moves the moving unit. A plurality of displacement measuring units for measuring the displacement of the surface of the first holding unit or the second holding unit, and a plurality of load measurements for measuring a load acting on the first holding unit or the second holding unit And the first holding unit or the first holding unit in which the displacement of the surface is measured by the plurality of displacement measuring units so that the displacement is uniform within the surface based on the measurement results by the plurality of displacement measuring units. 2 by adjusting the position of the holding portion and by the plurality of load measuring portions. Based on the measurement result, the position of the second holding unit or the first holding unit where the displacement of the surface is not measured by the plurality of displacement measuring units is adjusted so that the load is uniform within the surface. And a control unit.

  According to the present invention, for example, when the second holding unit is moved in the horizontal direction by the moving mechanism, first, based on the measurement results by the plurality of displacement measuring units, the displacement of the second holding unit is uniform in the surface. Thus, the position of the second holding part, that is, the parallelism is adjusted. Further, based on the measurement results obtained by the plurality of load measuring units, the position of the first holding unit, that is, the parallelism is adjusted so that the load acting on the first holding unit is uniform within the surface. Thus, since the parallelism of the first holding unit and the second holding unit can be adjusted appropriately, the second holding unit is moved in the horizontal direction by the moving mechanism and the substrate to be processed and the support substrate are moved. When peeling, it can suppress that the said to-be-processed substrate and a support substrate suffer damage. Therefore, the substrate to be processed and the support substrate can be appropriately separated.

  In the above description, the second holding unit is moved in the horizontal direction by the moving mechanism. However, even when the first holding unit is moved in the horizontal direction, the operation and effect are the same as described above. That is, the substrate to be processed and the support substrate can be appropriately separated by appropriately adjusting the positions (parallelism) of the first holding unit and the second holding unit.

  When the first holding unit or the second holding unit is moved in the horizontal direction by the moving mechanism to separate the substrate to be processed and the support substrate, the control unit is measured by the plurality of load measuring units. When the load acting on the first holding part or the second holding part moved by the moving mechanism exceeds an allowable load, the first holding part or the second holding part The movement mechanism may be controlled to stop the movement of the holding unit.

  The displacement measuring unit may be a laser sensor, and the load measuring unit may be a load cell.

  The peeling device measures a load acting on the first holding unit or the second holding unit, and has a plurality of other load measuring units having a load measuring accuracy better than the load measuring unit, The control unit is configured such that the displacement of the surface is not measured by the plurality of displacement measurement units so that the load is uniform within the surface based on the measurement result by the plurality of other load measurement units. The position of the portion or the first holding portion may be adjusted.

  The other load measuring unit may be a load cell.

  The present invention according to another aspect is a peeling system including the peeling device, wherein the peeling device, a first cleaning device for cleaning a substrate to be processed peeled by the peeling device, and peeling by the peeling device. A second cleaning device for cleaning the supported substrate, a loading / unloading station for loading / unloading a substrate to be processed, a supporting substrate or a superposed substrate with respect to the processing station, and the processing station And a transfer device for transferring a substrate to be processed, a support substrate, or a superposed substrate to and from the loading / unloading station.

  Another aspect of the present invention is a peeling method for peeling a polymerized substrate in which a substrate to be processed and a support substrate are bonded with an adhesive using a peeling device to the substrate to be processed and the support substrate. A first holding unit that holds a substrate to be processed, a second holding unit that holds a supporting substrate, a moving mechanism that moves the first holding unit or the second holding unit in a horizontal direction, Acts on a plurality of displacement measuring units that measure the displacement of the surface of the first holding unit or the second holding unit moved by the moving mechanism, and the first holding unit or the second holding unit. A plurality of load measuring units for measuring a load, and the peeling method is configured so that the displacement is uniform on the surface based on the measurement results of the plurality of displacement measuring units. The first holding unit or the second holding unit whose surface displacement is measured by The displacement of the surface is not measured by the plurality of displacement measuring units so that the load is uniform on the surface based on the measurement results of the plurality of load measuring units by adjusting the position of the holding unit. A position adjusting step for adjusting the position of the second holding unit or the first holding unit, and the moving mechanism moves the first holding unit or the second holding unit in the horizontal direction, And a peeling step for peeling the support substrate.

  In the peeling step, the load that is measured by the plurality of load measuring units and that acts on the first holding unit or the second holding unit moved by the moving mechanism exceeds an allowable load. In this case, the movement mechanism may be controlled so as to stop the movement of the first holding unit or the second holding unit.

  The displacement measuring unit may be a laser sensor, and the load measuring unit may be a load cell.

  The peeling device measures a load acting on the first holding unit or the second holding unit, and has a plurality of other load measuring units having a load measuring accuracy better than the load measuring unit, In the position adjustment step, based on the measurement results by the plurality of other load measurement units, the second displacement measurement unit does not measure the surface displacement so that the load is uniform within the surface. The position of the holding part or the first holding part may be adjusted.

  The other load measuring unit may be a load cell.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the peeling device in order to cause the peeling device to execute the peeling method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  According to the present invention, it is possible to appropriately perform a separation process between a substrate to be processed and a support substrate.

It is a top view which shows the outline of a structure of the peeling system concerning this Embodiment. It is a side view of a to-be-processed wafer and a support wafer. It is a longitudinal cross-sectional view which shows the outline of a structure of a peeling apparatus. It is a top view which shows arrangement | positioning of a laser sensor. It is a top view which shows arrangement | positioning of a load cell. It is a longitudinal cross-sectional view which shows the outline of a structure of a 1st washing | cleaning apparatus. It is a cross-sectional view which shows the outline of a structure of a 1st washing | cleaning apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a 2nd washing | cleaning apparatus. It is a side view which shows the outline of a structure of a 2nd conveying apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of an inversion apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of an inspection apparatus. It is a cross-sectional view which shows the outline of a structure of a test | inspection apparatus. It is a flowchart which shows the main processes of peeling processing. It is explanatory drawing which shows a mode that the position adjustment of a 2nd holding | maintenance part is performed. It is explanatory drawing which shows a mode that the position adjustment of a 1st holding | maintenance part is performed. It is explanatory drawing which shows a mode that a superposition | polymerization wafer is preheated. It is explanatory drawing which shows a mode that the superposition | polymerization wafer was mounted in the 2nd holding | maintenance part. It is explanatory drawing which shows a mode that the superposition | polymerization wafer was hold | maintained with the 1st holding | maintenance part and the 2nd holding | maintenance part. It is explanatory drawing which shows a mode that a 2nd holding | maintenance part is moved to a perpendicular direction and a horizontal direction. It is explanatory drawing which shows a mode that the to-be-processed wafer and the support wafer were peeled. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered from the 1st holding | maintenance part of a peeling apparatus to the Bernoulli chuck of a 2nd conveying apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered from the Bernoulli chuck of a 2nd conveying apparatus to the porous chuck | zipper of a 1st washing | cleaning apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered from the Bernoulli chuck of a 3rd conveying apparatus to the 2nd holding | maintenance part of an inversion apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered to the 1st holding | maintenance part from the 2nd holding | maintenance part of an inversion apparatus. It is explanatory drawing which shows the state by which the to-be-processed wafer was delivered from the 2nd holding | maintenance part of the inversion apparatus to the 1st holding | maintenance part. It is explanatory drawing which shows the state by which the to-be-processed wafer was delivered from the 1st holding | maintenance part of the inversion apparatus to the Bernoulli chuck of the 3rd conveying apparatus. It is a side view which shows the outline of a one part structure of the peeling apparatus concerning other embodiment.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing an outline of a configuration of a peeling system 1 according to the present embodiment.

In the peeling system 1, as shown in FIG. 2, a superposed wafer T as a superposed substrate in which a target wafer W as a target substrate and a support wafer S as a support substrate are bonded with an adhesive G is used as a target wafer W. And the support wafer S is peeled off. Hereinafter, in the processing target wafer W, a surface bonded to the support wafer S via the adhesive G is referred to as “bonding surface W _J ”, and a surface opposite to the bonding surface W _J is referred to as “non-bonding surface W _N ”. That's it. Similarly, in the support wafer S, a surface bonded to the processing target wafer W via the adhesive G is referred to as “bonding surface S _J ”, and a surface opposite to the bonding surface S _J is referred to as “non-bonding surface S _N”. " Note that wafer W is a wafer as a product, for example, a plurality of devices having a plurality of electronic circuits and the like on the bonding surface W _J is formed. The wafer W is, for example, non-bonding surface _{W N} is polished, has been thinned (e.g., thickness 50 .mu.m to 100 .mu.m) is. The support wafer S is a wafer having a disk shape having the same diameter as the diameter of the wafer W to be processed and supporting the wafer W to be processed. In this embodiment, the case where a wafer is used as the support substrate will be described, but another substrate such as a glass substrate may be used.

As shown in FIG. 1, the peeling system 1 includes cassettes C _W , C _S , and C _T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T, respectively. A loading / unloading station 2 for loading / unloading, a processing station 3 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the supporting wafer S, and the overlapped wafer T, and a post-processing station 4 adjacent to the processing station 3 And the interface station 5 for transferring the wafer W to be processed between the two.

The carry-in / out station 2 and the processing station 3 are arranged side by side in the X direction (vertical direction in FIG. 1). A wafer transfer area 6 is formed between the carry-in / out station 2 and the processing station 3. The interface station 5 is disposed on the Y direction negative direction side (left direction side in FIG. 1) of the processing station 3. An inspection apparatus 7 for inspecting the wafer W to be processed before being transferred to the post-processing station 4 is disposed on the positive side in the X direction of the interface station 5 (upward in FIG. 1). Further, the opposite side of the inspection apparatus 7 across the interface station 5, i.e. the X-direction negative side of the interface station 5 (side downward direction in FIG. 1), the bonding surface W _J and wafer W after inspection A post-inspection cleaning station 8 that performs cleaning of the non-bonded surface W _N and inversion of the front and back surfaces of the wafer W to be processed is disposed.

The loading / unloading station 2 is provided with a cassette mounting table 10. A plurality of, for example, three cassette mounting plates 11 are provided on the cassette mounting table 10. The cassette mounting plates 11 are arranged in a line in the Y direction (left and right direction in FIG. 1). These cassette mounting plates 11, cassettes _C W to the outside of the peeling system _1, C S, when loading and unloading the _{C T,} a cassette _{C W,} C S, can be placed on _{C T} . Thus, the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T. The number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. Further, the plurality of superposed wafers T carried into the carry-in / out station 2 are inspected in advance, and a superposed wafer T including a normal target wafer W and a superposed wafer T including a defective target wafer W are obtained. And have been determined.

  A first transfer device 20 is disposed in the wafer transfer region 6. The first transfer device 20 includes a transfer arm that can move around, for example, a vertical direction, a horizontal direction (Y direction, X direction), and a vertical axis. The first transfer device 20 moves in the wafer transfer region 6 and can transfer the processing target wafer W, the support wafer S, and the overlapped wafer T between the transfer-in / out station 2 and the processing station 3.

  The processing station 3 includes a peeling device 30 that peels the superposed wafer T into the processing target wafer W and the supporting wafer S. A first cleaning device 31 that cleans the wafer to be processed W that has been peeled off is disposed on the negative side in the Y direction of the peeling device 30 (left side in FIG. 1). A second transfer device 32 is provided between the peeling device 30 and the first cleaning device 31. Further, a second cleaning device 33 for cleaning the peeled support wafer S is arranged on the positive side in the Y direction of the peeling device 30 (right side in FIG. 1). Thus, in the processing station 3, the first cleaning device 31, the second transfer device 32, the peeling device 30, and the second cleaning device 33 are arranged in this order from the interface station 5 side.

In the inspection apparatus 7, the presence or absence of the residue of the adhesive G on the processing target wafer W peeled by the peeling apparatus 30 is inspected. In the post-inspection cleaning station 8, the wafer W to be processed in which the residue of the adhesive G is confirmed by the inspection device 7 is cleaned. The inspection after cleaning station 8, the bonding surface cleaning device 40 for cleaning the joint surface W _J of wafer W, the non-bonding surface cleaning apparatus 41 for cleaning the non-bonding surface W _N of the wafer W, the wafer W Has a reversing device 42 for vertically reversing the front and back surfaces. The bonding surface cleaning device 40, the reversing device 42, and the non-bonding surface cleaning device 41 are arranged side by side in the Y direction from the post-processing station 4 side.

  The interface station 5 is provided with a third transport device 51 that is movable on a transport path 50 extending in the Y direction. The third transfer device 51 is also movable in the vertical direction and around the vertical axis (θ direction), and the wafer to be processed between the processing station 3, the post-processing station 4, the inspection device 7, and the post-inspection cleaning station 8. W can be conveyed.

  In the post-processing station 4, predetermined post-processing is performed on the processing target wafer W peeled off in the processing station 3. As predetermined post-processing, for example, processing for mounting the processing target wafer W, processing for inspecting electrical characteristics of devices on the processing target wafer W, processing for dicing the processing target wafer W for each chip, and the like are performed.

  Next, the structure of the peeling apparatus 30 mentioned above is demonstrated. As shown in FIG. 3, the peeling device 30 includes a processing container 100 that can seal the inside. A loading / unloading port (not shown) for the processing target wafer W, the support wafer S, and the overlapped wafer T is formed on the side surface of the processing container 100, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  An exhaust port 101 for exhausting the atmosphere inside the processing container 100 is formed on the bottom surface of the processing container 100. An exhaust pipe 103 communicating with an exhaust device 102 such as a vacuum pump is connected to the exhaust port 101.

  Inside the processing container 100, a first holding unit 110 that holds the wafer W to be processed by suction on the lower surface and a second holding unit 111 that places and holds the support wafer S on the upper surface are provided. . The first holding unit 110 is provided above the second holding unit 111 and is disposed so as to face the second holding unit 111. That is, in the inside of the processing container 100, the peeling process is performed on the superposed wafer T in a state where the processing target wafer W is arranged on the upper side and the supporting wafer S is arranged on the lower side.

For example, a porous chuck is used for the first holding unit 110. The first holding part 110 has a plate-like main body part 120. A porous 121 that is a porous body is provided on the lower surface side of the main body 120. Porous 121 has, for example, substantially the same diameter as the processed wafer W, and contact with the non-bonding surface W _N of the treated wafer W. For example, silicon carbide is used as the porous 121.

A suction space 122 is formed inside the main body 120 and above the porous 121. The suction space 122 is formed so as to cover the porous 121, for example. A suction tube 123 is connected to the suction space 122. The suction pipe 123 is connected to a negative pressure generator (not shown) such as a vacuum pump. Then, the non-joint surface W _{N of the} wafer to be processed is sucked from the suction pipe 123 through the suction space 122 and the porous 121, and the wafer to be processed W is sucked and held by the first holding unit 110.

  A heating mechanism 124 that heats the wafer W to be processed is provided inside the main body 120 and above the suction space 122. For the heating mechanism 124, for example, a heater is used.

  A support plate 130 that supports the first holding unit 110 is provided on the upper surface of the first holding unit 110. The support plate 130 is supported on the ceiling surface of the processing container 100. The first holding unit 110 is detachably attached to the support plate 130. Further, the support plate 130 of the present embodiment may be omitted, and the first holding unit 110 may be supported in contact with the ceiling surface of the processing container 100.

  The support plate 130 has a laser sensor as a displacement measurement unit that measures the displacement of the surface of the second holding unit 111, in this embodiment, the displacement of the surface of the support wafer S placed on the second holding unit 111. 140 is provided. As shown in FIG. 4, a plurality of, for example, three laser sensors 140 are provided. These three laser sensors 140 are arranged so as to measure displacements at three positions, that is, the central portion and both end portions of the support wafer S, respectively. Further, the laser sensor 140 is arranged in the second holding unit 111 on the moving direction side (the negative direction side in the X direction in FIG. 4) of a support plate 180 described later.

  A suction tube 150 for sucking and holding the support wafer S is provided inside the second holding unit 111. The suction tube 150 is connected to a negative pressure generator (not shown) such as a vacuum pump.

  In addition, a heating mechanism 151 for heating the support wafer S is provided inside the second holding unit 111. For the heating mechanism 151, for example, a heater is used.

  Between the lower surface of the 2nd holding | maintenance part 111 and the support plate 180 mentioned later, the load cell 160 as a some load measurement part which measures the load which acts on the 1st holding | maintenance part 110 or the 2nd holding | maintenance part 111 is provided. Is provided. As shown in FIG. 5, a plurality of, for example, three load cells 160 are provided. These three load cells 160 are arranged on the outer periphery of the surface of the second holding unit 111 at equal intervals on the same circumference as the surface of the second holding unit 111. The load range that each load cell 160 can measure is, for example, 0N to 500N.

  Further, between the lower surface of the second holding unit 111 and a support plate 180 described later, the second holding unit 111 is moved in the vertical direction to adjust the position of the second holding unit 111, that is, the parallelism. A position adjusting member 161 may be provided. For example, an air cylinder or the like is used for the position adjusting member 161. A plurality of, for example, three position adjusting members 161 are provided. These three position adjusting members 161 are arranged on the outer circumference of the surface of the second holding part 111 and at equal intervals on the same circumference as the surface of the second holding part 111. Note that the position adjusting member 161 may be omitted, and the position of the second holding unit 111 may be adjusted manually.

  Below the second holding unit 111, a moving mechanism 170 is provided for moving the second holding unit 111 and the supporting wafer S in the vertical direction and the horizontal direction, as shown in FIG. The moving mechanism 170 includes a vertical moving unit 171 that moves the second holding unit 111 in the vertical direction and a horizontal moving unit 172 that moves the second holding unit 111 in the horizontal direction.

  The vertical moving unit 171 vertically moves the first holding unit 110 and the second holding unit 111 by lifting and lowering the support plate 180 that supports the second holding unit 111, the load cell 160 and the position adjustment member 161. A drive unit 181 that approaches and separates in the direction and a support member 182 that supports the support plate 180 are included. The drive unit 181 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. The support member 182 is configured to be extendable in the vertical direction, and is provided at, for example, four locations between the support plate 180 and a support body 191 described later.

  The horizontal moving unit 172 includes a rail 190 extending along the X direction (left and right direction in FIG. 3), a support 191 attached to the rail 190, and a drive unit 192 that moves the support 191 along the rail 190. have. The drive unit 192 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw.

  In addition, below the 2nd holding | maintenance part 111, the raising / lowering pin (not shown) for supporting and raising / lowering the superposition | polymerization wafer T or the support wafer S from the downward direction is provided. The elevating pin is inserted through a through hole (not shown) formed in the second holding part 111 and can protrude from the upper surface of the second holding part 111.

  Next, the configuration of the first cleaning device 31 described above will be described. As shown in FIG. 6, the first cleaning device 31 has a processing container 200 that can be sealed inside. A loading / unloading port (not shown) for the processing target wafer W is formed on the side surface of the processing container 200, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

A porous chuck 210 that holds and rotates the wafer W to be processed is provided at the center of the processing container 200. The porous chuck 210 has a flat plate-like main body portion 211 and a porous 212 that is a porous body provided on the upper surface side of the main body portion 211. Porous 212 has, for example, substantially the same diameter as the processed wafer W, and contact with the non-bonding surface W _N of the treated wafer W. As the porous 212, for example, silicon carbide is used. A suction pipe (not shown) is connected to the porous 212, and the non-bonded surface W _N of the wafer to be processed W is sucked from the suction pipe via the porous 212, so that the wafer to be processed W is placed on the porous chuck 210. Can be adsorbed and retained.

  Below the porous chuck 210, for example, a chuck driving unit 213 provided with a motor or the like is provided. The porous chuck 210 can be rotated at a predetermined speed by the chuck driving unit 213. Further, the chuck driving unit 213 is provided with an elevating drive source such as a cylinder, for example, and the porous chuck 210 is movable up and down.

  Around the porous chuck 210, there is provided a cup 214 that receives and collects the liquid scattered or dropped from the wafer W to be processed. Connected to the lower surface of the cup 214 are a discharge pipe 215 for discharging the collected liquid and an exhaust pipe 216 for evacuating and exhausting the atmosphere in the cup 214.

  As shown in FIG. 7, a rail 220 extending along the Y direction (left and right direction in FIG. 7) is formed on the X direction negative direction (downward direction in FIG. 7) side of the cup 214. For example, the rail 220 is formed from the outside of the cup 214 on the Y direction negative direction (left direction in FIG. 7) side to the outside of the Y direction positive direction (right direction in FIG. 7) side. An arm 221 is attached to the rail 220.

  As shown in FIGS. 6 and 7, the arm 221 supports a cleaning liquid nozzle 222 that supplies a cleaning liquid, for example, an organic solvent that is a solvent for the adhesive G, to the wafer W to be processed. The arm 221 is movable on the rail 220 by a nozzle driving unit 223 shown in FIG. Accordingly, the cleaning liquid nozzle 222 can move from the standby unit 224 installed on the outer side of the cup 214 on the positive side in the Y direction to above the center of the wafer W to be processed in the cup 214, and further on the wafer W to be processed. Can be moved in the radial direction of the wafer W to be processed. The arm 221 can be moved up and down by a nozzle driving unit 223, and the height of the cleaning liquid nozzle 222 can be adjusted.

  For example, a two-fluid nozzle is used as the cleaning liquid nozzle 222. As shown in FIG. 6, a supply pipe 230 that supplies the cleaning liquid to the cleaning liquid nozzle 222 is connected to the cleaning liquid nozzle 222. The supply pipe 230 communicates with a cleaning liquid supply source 231 that stores the cleaning liquid therein. The supply pipe 230 is provided with a supply device group 232 including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting unit, and the like. A supply pipe 233 that supplies an inert gas, for example, nitrogen gas, to the cleaning liquid nozzle 222 is connected to the cleaning liquid nozzle 222. The supply pipe 233 communicates with a gas supply source 234 that stores an inert gas therein. The supply pipe 233 is provided with a supply device group 235 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like. The cleaning liquid and the inert gas are mixed in the cleaning liquid nozzle 222 and supplied from the cleaning liquid nozzle 222 to the wafer W to be processed. In the following, a mixture of a cleaning liquid and an inert gas may be simply referred to as “cleaning liquid”.

  In addition, below the porous chuck 210, lifting pins (not shown) for supporting and lifting the wafer W to be processed from below may be provided. In such a case, the elevating pins can pass through a through hole (not shown) formed in the porous chuck 210 and protrude from the upper surface of the porous chuck 210. Then, instead of raising and lowering the porous chuck 210, the raising and lowering pins are raised and lowered, and the wafer W to be processed is transferred to and from the porous chuck 210.

  The configuration of the bonded surface cleaning device 40 and the non-bonded surface cleaning device 41 of the post-inspection cleaning station 8 is the same as the configuration of the first cleaning device 31 described above, and thus the description thereof is omitted.

  The configuration of the second cleaning device 33 is substantially the same as the configuration of the first cleaning device 31 described above. The second cleaning device 33 is provided with a spin chuck 240 instead of the porous chuck 210 of the first cleaning device 31 as shown in FIG. The spin chuck 240 has a horizontal upper surface, and a suction port (not shown) for sucking the support wafer S, for example, is provided on the upper surface. The support wafer S can be sucked and held on the spin chuck 240 by suction from the suction port. Since the other structure of the 2nd washing | cleaning apparatus 33 is the same as that of the structure of the 1st washing | cleaning apparatus 31 mentioned above, description is abbreviate | omitted.

In the second cleaning device 33, below the spin chuck 240, it has a back rinse nozzle for injecting a cleaning liquid toward a back surface of the processing the wafer W, i.e. the non-bonding surface W _N (not shown) is provided May be. The non-bonded surface W _N of the wafer to be processed W and the outer peripheral portion of the wafer to be processed W are cleaned by the cleaning liquid sprayed from the back rinse nozzle.

  Next, the configuration of the second transport device 32 described above will be described. The second transfer device 32 has a Bernoulli chuck 250 that holds the wafer W to be processed as shown in FIG. The Bernoulli chuck 250 is supported by the support arm 251. The support arm 251 is supported by the first drive unit 252. The first drive unit 252 allows the support arm 251 to rotate around the horizontal axis and extend and contract in the horizontal direction. A second drive unit 253 is provided below the first drive unit 252. By this second drive unit 253, the first drive unit 252 can rotate about the vertical axis and can be moved up and down in the vertical direction.

  In addition, since the 3rd conveying apparatus 51 has the structure similar to the 2nd conveying apparatus 32 mentioned above, description is abbreviate | omitted. However, the second drive unit 232 of the third transport device 51 is attached to the transport path 50 shown in FIG. 1, and the third transport device 51 is movable on the transport path 50.

  Next, the configuration of the reversing device 42 described above will be described. As shown in FIG. 10, the reversing device 42 includes a processing container 260 that houses a plurality of devices. A loading / unloading port (not shown) for loading / unloading the wafer W to be processed by the third transfer device 51 is formed on the side surface of the processing container 260, and an opening / closing shutter (not shown) is provided at the loading / unloading port (not shown). (Not shown) is provided.

  An exhaust port 270 for exhausting the atmosphere inside the processing container 260 is formed on the bottom surface of the processing container 260. An exhaust pipe 272 communicating with an exhaust device 271 such as a vacuum pump is connected to the exhaust port 270.

  Inside the processing container 260, a first holding unit 280 that holds the wafer W to be processed on the lower surface and a second holding unit 281 that holds the wafer W to be processed on the upper surface are provided. The first holding unit 280 is provided above the second holding unit 281 and is disposed so as to face the second holding unit 281. For example, the first holding unit 280 and the second holding unit 281 have substantially the same diameter as the wafer W to be processed. Further, Bernoulli chucks are used for the first holding unit 280 and the second holding unit 281. Thereby, the 1st holding | maintenance part 280 and the 2nd holding | maintenance part 281 can hold | maintain the whole surface of the single side | surface of the to-be-processed wafer W, respectively, non-contactingly.

  A support plate 282 that supports the first holding unit 280 is provided on the upper surface of the first holding unit 280. Note that the support plate 282 of this embodiment may be omitted, and the first holding unit 280 may be supported in contact with the ceiling surface of the processing container 260.

  Below the second holding portion 281, a moving mechanism 290 that moves the second holding portion 281 in the vertical direction is provided. The moving mechanism 290 drives the support plate 291 that supports the lower surface of the second holding unit 281, and moves the support plate 291 up and down so that the first holding unit 280 and the second holding unit 281 approach and separate in the vertical direction. Part 292. The drive unit 292 is supported by a support body 293 provided on the bottom surface of the processing container 260. A support member 294 that supports the support plate 291 is provided on the upper surface of the support 293. The support member 294 is configured to be extendable and contractible in the vertical direction, and can freely expand and contract when the support plate 291 is moved up and down by the drive unit 292.

  Next, the configuration of the above-described inspection apparatus 7 will be described. The inspection apparatus 7 has a processing container 300 as shown in FIGS. 11 and 12. A loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 300, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

In the processing container 300, a porous chuck 310 for holding the processing target wafer W is provided. The porous chuck 310 has a flat plate-like main body 311 and a porous 312 which is a porous body provided on the upper surface side of the main body 311. The porous 312 has, for example, substantially the same diameter as the wafer to be processed W, and is in contact with the non-joint surface W _{N of the} wafer to be processed W. For example, silicon carbide is used as the porous 312. A suction pipe (not shown) is connected to the porous 312, and the non-bonded surface W _N of the wafer to be processed W is sucked from the suction pipe via the porous 312, so that the wafer to be processed W is placed on the porous chuck 310. Can be adsorbed and retained.

  A chuck driving unit 313 is provided below the porous chuck 310. By this chuck drive unit 313, the porous chuck 310 is rotatable. Further, the chuck driving unit 313 is provided on the bottom surface in the processing container 300 and is mounted on a rail 314 extending along the Y direction. The porous chuck 310 can be moved along the rail 314 by the chuck driving unit 313. That is, the porous chuck 310 is between the delivery position P1 for carrying in and out the wafer W to be processed from the outside of the processing container 300 and the alignment position P2 for adjusting the position of the notch portion of the wafer W to be processed. I can move.

  A sensor 315 that detects the position of the notch portion of the processing target wafer W held by the porous chuck 310 is provided at the alignment position P2. While detecting the position of the notch portion by the sensor 315, the position of the notch portion of the wafer W to be processed can be adjusted by rotating the porous chuck 310 by the chuck driving portion 313.

  An imaging device 320 is provided on the side surface of the processing container 300 on the alignment position P2 side. For the imaging device 320, for example, a wide-angle CCD camera is used. A half mirror 321 is provided near the upper center of the processing container 300. The half mirror 321 is provided at a position facing the imaging device 320 and is inclined by 45 degrees from the vertical direction. An illumination device 322 capable of changing the illuminance is provided above the half mirror 321, and the half mirror 321 and the illumination device 322 are fixed to the upper surface of the processing container 300. Further, the imaging device 320, the half mirror 321, and the illumination device 322 are respectively provided above the processing target wafer W held by the porous chuck 310. The illumination from the illumination device 322 passes through the half mirror 321 and is illuminated downward. Therefore, the reflected light of the object in the irradiation area is reflected by the half mirror 321 and is taken into the imaging device 320. That is, the imaging device 320 can image an object in the irradiation area. Then, the captured image of the processing target wafer W is output to the control unit 350 described later, and the control unit 350 inspects whether or not the adhesive G remains on the processing target wafer W.

  The peeling system 1 is provided with a control unit 350 as shown in FIG. The control unit 350 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the processing target wafer W, the supporting wafer S, and the overlapped wafer T in the peeling system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transport apparatuses to realize a peeling process described later in the peeling system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 350 from the storage medium H.

  Next, the peeling process method of the to-be-processed wafer W and the support wafer S performed using the peeling system 1 comprised as mentioned above is demonstrated. FIG. 13 is a flowchart showing an example of main steps of the peeling process.

  Before separating the processed wafer W and the support wafer S, which are products, the positions of the first holding unit 110 and the second holding unit 111, that is, the parallelism is adjusted. First, as shown in FIG. 14, a dummy wafer D having the same shape as the support wafer S is placed on the second holding unit 111. Then, the second holding unit 111 and the dummy wafer D are moved in the horizontal direction by the moving mechanism 170. During the movement of the second holding unit 111, three laser sensors 140 measure the displacements at the three locations of the center and both ends on the surface of the dummy wafer D placed on the second holding unit 111, respectively. Each laser sensor 140 measures the displacement of a plurality of points on the surface of the dummy wafer D in the moving direction of the second holding unit 111. In this way, displacements at a plurality of points on the surface of the dummy wafer D are measured. Then, the position of the second holding unit 111, that is, the degree of parallelism is adjusted by the position adjusting member 161 so that the displacement of the dummy wafer D is uniform within the surface. For example, when the position adjustment member 161 is omitted, the position adjustment of the second holding unit 111 may be performed manually. In this embodiment, the position of the second holding unit 111 is adjusted so that the displacement of the dummy wafer D is uniform within the surface. However, the displacement of the dummy wafer D is within an allowable range within the surface, for example, a parallelism of 10 μm or less. Is set, the position of the second holding unit 111 may be adjusted so that the displacement of all points is within the allowable range.

  After that, as shown in FIG. 15, the second holding unit 111 is moved below the first holding unit 110 and the second holding unit 111 is raised by the moving mechanism 170. Then, the dummy wafer D is sandwiched and held between the first holding unit 110 and the second holding unit 111. At this time, the load acting on the first holding unit 110 and the second holding unit 111 is measured by the three load cells 160. And since the position adjustment of the 2nd holding | maintenance part 111 is completed, the position of the 1st holding | maintenance part 110, ie, parallelism, is adjusted so that the load of the three load cells 160 may become uniform in a surface. The position adjustment of the first holding unit 110 may be performed by, for example, a position adjusting member (not shown) provided between the first holding unit 110 and the support plate 130, or may be performed manually. May be. As described above, the position adjustment of the first holding unit 110 and the second holding unit 111 is completed (step A1 in FIG. 13).

  Note that the position adjustment of the first holding unit 110 is performed by, for example, measuring three load cells 160 when the second holding unit 111 is lifted, and each load cell 160 measuring the load. You may perform based on a position. For example, in one load cell 160, the load is measured when the second holding portion 111 is lifted by 59 mm, and in the other load cell 160, the load is measured when the second holding portion 111 is lifted by 60 mm. Then, suppose that the load was measured when the 2nd holding | maintenance part 111 raised 61 mm. When each load cell 160 grasps the position of the second holding part 111 where each load cell 160 measures the load, since the position adjustment of the second holding part 111 is completed, the flatness of the first holding part 110 is grasped. can do. And the position of the 1st holding | maintenance part is adjusted so that the displacement in the surface of the 1st holding | maintenance part 110 may become uniform.

When the position adjustment of the first holding unit 110 and the second holding unit 111 is completed, the product wafer to be processed W and the support wafer S are then separated. In this stripping process, first, the cassette C _T accommodating a plurality of bonded wafer _T, an empty cassette C _W, and an empty cassette C _S is placed on the predetermined cassette mounting plate 11 of the carry-out station 2 The The superposed wafer _T in the cassette CT is taken out by the first transfer device 20 and transferred to the peeling device 30 of the processing station 3. At this time, the superposed wafer T is transported in a state where the processing target wafer W is disposed on the upper side and the support wafer S is disposed on the lower side.

  The overlapped wafer T carried into the peeling apparatus 30 is delivered to lifting pins (not shown) that have been raised in advance. As shown in FIG. 16, the overlapped wafer T is in contact with the first holding unit 110 and the second holding unit 111 between the first holding unit 110 and the second holding unit 111. It is arranged at the position not to. After a predetermined time has elapsed in this state, the superposed wafer T is preheated by the heating mechanisms 124 and 151. With such preliminary heating, even if the wafer W to be processed is sucked and held by the first holding unit 110 and heated as described later, the thermal expansion of the wafer W to be processed can be suppressed. For this reason, compared with the conventional case where the wafer to be processed at room temperature is heated by the first holding unit, the present embodiment suppresses the warpage of the wafer to be processed W and the first wafer and the first wafer to be processed. Particles generated by rubbing the holding portions 110 can be suppressed.

Thereafter, as shown in FIG. 17, the overlapped wafer T is sucked and held by the second holding unit 111. Then, after a predetermined time has elapsed, the superposed wafer W is heated to a predetermined temperature, for example, 200 ° C. to 250 ° C. by the heating mechanisms 124 and 151. As a result, the adhesive G in the superposed wafer T is softened. Thereafter, the second holding unit 111 is raised by the moving mechanism 170, and the overlapped wafer T is sandwiched and held between the first holding unit 110 and the second holding unit 111 as shown in FIG. At this time, the non-bonding surface W _N of the wafer W is held by suction on the first holding portion 110, the non-bonding surface S _N of the support wafer S is held by suction to the second holding portion 111.

  Subsequently, while the superposed wafer T is heated by the heating mechanisms 124 and 151 and the softened state of the adhesive G is maintained, the second holding unit 111 and the support wafer S are vertically moved by the moving mechanism 170 as shown in FIG. And move horizontally, that is, diagonally downward. Then, as shown in FIG. 20, the processing target wafer W held by the first holding unit 110 and the support wafer S held by the second holding unit 111 are peeled off (step A2 in FIG. 13).

  In this step A2, the three load cells 160 measure the load acting on the second holding unit 111. Then, the load measured by the load cell 160 is output to the control unit 350. The control unit 350 stops the driving of the driving unit 192 of the moving mechanism 170 when the load acting on the second holding unit 111 exceeds the allowable load based on the load measured by the load cell 160. For example, when an abnormality occurs in the separation processing of the wafer W to be processed and the support wafer S, the load measured by each load cell 160 increases rapidly, or the loads measured by the three load cells 160 become non-uniform. The control unit 350 controls the driving unit 192 so as to stop the driving of the driving unit 192. In such a case, it is possible to reliably prevent the processing target wafer W and the supporting wafer S from being damaged.

In step A2, the second holding unit 111 moves 100 μm in the vertical direction and 300 mm in the horizontal direction. In the present embodiment, the thickness of the adhesive G in bonded wafer T is a 30μm~40μm example, the height of the devices formed on the bonding surface W _J of the processing target wafer W (bump), for example 20 μm. Therefore, the distance between the device on the processing target wafer W and the support wafer S is very small. Therefore, for example, when the second holding unit 111 is moved only in the horizontal direction, the device and the support wafer S may come into contact with each other and the device may be damaged. In this regard, by moving the second holding unit 111 in the horizontal direction and also in the vertical direction as in the present embodiment, contact between the device and the support wafer S is avoided, and damage to the device is suppressed. be able to. The ratio of the vertical movement distance and the horizontal movement distance of the second holding unit 111 is set based on the height of the device (bump) on the wafer W to be processed.

  Thereafter, the wafer W to be processed peeled off by the peeling device 30 is transferred to the first cleaning device 31 by the second transfer device 32. Here, a transfer method of the wafer W to be processed by the second transfer device 32 will be described.

As shown in FIG. 21, the support arm 251 of the second transfer device 32 is extended, and the Bernoulli chuck 250 is disposed below the wafer W to be processed held by the first holding unit 110. Thereafter, the Bernoulli chuck 250 is raised, and the suction of the wafer W to be processed from the suction tube 123 in the first holding unit 110 is stopped. Then, the processing target wafer W is delivered from the first holding unit 110 to the Bernoulli chuck 250. Thereafter, the Bernoulli chuck 250 is lowered to a predetermined position. Note that the wafer W to be processed is held in a non-contact state by the Bernoulli chuck 250. Therefore, wafer W is held without device on the bonding surface W _J of wafer W suffers damage. At this time, the second holding unit 111 moves to a position facing the first holding unit 110.

  Next, as shown in FIG. 22, the support arm 251 of the second transfer device 32 is rotated to move the Bernoulli chuck 250 above the porous chuck 210 of the first cleaning device 31, and the Bernoulli chuck 250 is reversed. Then, the processing target wafer W is directed downward. At this time, the porous chuck 210 is raised above the cup 214 and kept waiting. Thereafter, the wafer W to be processed is delivered from the Bernoulli chuck 250 to the porous chuck 210 and held by suction.

When the wafer W to be processed is sucked and held on the porous chuck 210 in this way, the porous chuck 210 is lowered to a predetermined position. Subsequently, the cleaning liquid nozzle 222 of the standby unit 224 is moved to above the center of the wafer W to be processed by the arm 221. Thereafter, while rotating the wafer W by the porous chuck 210, and supplies the cleaning liquid from the cleaning liquid nozzle 222 to the bonding surface W _J of wafer W. Supplied cleaning liquid is diffused over the entire surface of the bonding surface W _J of wafer W by the centrifugal force, the bonding surface W _J of the wafer W is cleaned (step A3 in FIG. 13).

  Here, as described above, the plurality of superposed wafers T carried into the carry-in / out station 2 have been inspected in advance, and the superposed wafer T including the normal target wafer W and the defective target wafer W are arranged. The superposed wafer T is discriminated.

A normal wafer W peeled from the normal superposed wafer T is inspected by the third transfer device 51 with the non-bonding surface W _N facing downward after the bonding surface W _J is cleaned in step A3. It is conveyed to the device 7. Note that the transfer of the wafer W to be processed by the third transfer device 51 is substantially the same as the transfer of the wafer W to be processed by the second transfer device 32 described above, and a description thereof will be omitted.

  The wafer W to be processed transferred to the inspection apparatus 7 is held on the porous chuck 310 at the delivery position P1. Subsequently, the chuck chuck 313 moves the porous chuck 310 to the alignment position P2. Next, the porous chuck 310 is rotated by the chuck driving unit 313 while detecting the position of the notch portion of the wafer W to be processed by the sensor 315. And the position of the notch part of the to-be-processed wafer W is adjusted, and the said to-be-processed wafer W is arrange | positioned in a predetermined direction.

Thereafter, the chuck chuck 313 moves the porous chuck 310 from the alignment position P2 to the delivery position P1. When the wafer W to be processed passes under the half mirror 321, the illumination device 322 illuminates the wafer W to be processed. The reflected light on wafer W by the illumination is taken into the imaging apparatus 320, an image of the bonding surface W _J of wafer W is captured by the image capturing device 320. Image of the bonding surface W _J of wafer W captured is outputted to the control unit 350, the control unit 350, the presence or absence of adhesive residue G at the joint surface W _J of wafer W is inspected (FIG. 13 step A4).

When the residue of the adhesive G is confirmed in the inspection apparatus 7, the wafer W to be processed is transferred to the bonding surface cleaning apparatus 40 of the post-inspection cleaning station 8 by the third transfer apparatus 51, and the bonding surface is cleaned in the bonding surface cleaning apparatus 40. adhesive G on W _J is removed (step A5 in FIG. 13). The process A5 is the same as the above-described process A3, and thus the description thereof is omitted. Further, for example, when it is confirmed by the inspection device 7 that there is no residue of the adhesive G, the step A5 may be omitted.

When bonding surface W _J is cleaned wafer W is transferred to the reversing device 42 by the third transporting device 51, reverses the front and back surfaces by the reversing device 42, that is, reversed in the vertical direction (step of FIG. 13 A6). Here, a method for reversing the wafer W to be processed by the reversing device 42 will be described.

Wafer W is cleaned bonding surface W _J is the cemented surface cleaning apparatus 40, as shown in FIG. 23, reversing device while being held a joint surface W _J by Bernoulli chuck 250 of the third transport device 51 42 It is conveyed to. The wafer W is, the bonding surface W _J passed in a state where upward to the second holding portion 281 of the reversing device 42, the non-bonding surface W of the wafer W by the second holding portion 281 The entire surface of _N is held.

Next, the Bernoulli chuck 250 of the third transport device 51 is retracted from above the second holding unit 281 and then the second holding unit 281 is raised by the driving unit 283, in other words, as shown in FIG. The first holding unit 280 is moved closer. Then, while holding the joint surface W _J of wafer W by the first holding portion 280, stop the holding of the wafer W by the second holding portion 281, a first holding a wafer W It passes to the part 280. As a result, as shown in FIG. 25, the wafer W to be processed is held by the first holding unit 280 with the non-bonding surface W _N facing downward.

Thereafter, the second holding unit 281 is lowered to separate the first holding unit 280 and the second holding unit 281, and then the retracted Bernoulli chuck 250 of the third transport device 51 is rotated around the horizontal axis. Move. Then, with the Bernoulli chuck 250 facing upward, the Bernoulli chuck 250 is disposed below the first holding portion 280. Next, the Bernoulli chuck 250 is raised, and the holding of the wafer W to be processed by the first holding unit 280 is stopped at the same time. Thereby, wafer W which has been held the joint surface W _J by Bernoulli chuck 250 when it is carried into the joint surface cleaning apparatus 40, as shown in FIG. 26, the non-bonding surface W _N by Bernoulli chuck 250 It will be held. That is, the front and back surfaces of the wafer to be processed held by the Bernoulli chuck 250 are reversed. Thereafter, the Bernoulli chuck 250 is retracted from the reversing device 42 in a state where the non-bonding surface W _N of the wafer W to be processed is held.

  If the residue of the adhesive G is not confirmed in the inspection device 7, the wafer W to be processed is reversed by the reversing device 42 without being transferred to the bonding surface cleaning device 40. However, the inversion method is the same as that described above.

Thereafter, the Bernoulli chuck 250 of the third transfer device 51 is rotated around the horizontal axis while holding the wafer to be processed W, and the wafer to be processed W is inverted in the vertical direction. Then, wafer W is non-bonding surface W _N is transported to the inspection apparatus 7 again by the Bernoulli chuck 250 in a state facing upward, inspection of the non-bonding surface W _N is performed (step A7 in FIG. 13). When contamination of particles is confirmed on the non-bonding surface W _N , the wafer W to be processed is transferred to the non-bonding surface cleaning device 41 by the third transfer device 51, and the non-bonding surface W in the non-bonding surface cleaning device 41. _N is washed (step A8 in FIG. 13). This step A8 is the same as the above-described step A3, and thus the description thereof is omitted. Further, for example, when it is confirmed by the inspection device 7 that there is no residue of the adhesive G, the step A8 may be omitted.

  Next, the cleaned wafer W to be processed is transferred to the post-processing station 4 by the third transfer device 51. If no residue of the adhesive G is confirmed by the inspection apparatus 7, the wafer W to be processed is transferred to the post-processing station 4 without being transferred to the non-bonding surface cleaning apparatus 41.

  Thereafter, predetermined post-processing is performed on the wafer W to be processed in the post-processing station 4 (step A9 in FIG. 13). Thus, the processing target wafer W is commercialized.

On the other hand, wafer W with a peel defects from bonded wafer T including a defect, after bonding surface W _J is washed in step A3 and A4, it is transported to the station 2 loading and unloading by the first transfer device 20 The Thereafter, the wafer to be processed W having a defect is unloaded from the loading / unloading station 2 and collected (step A10 in FIG. 13).

While the above-described steps A <b> 3 to A <b> 10 are performed on the wafer W to be processed, the support wafer S peeled by the peeling device 30 is transferred to the second cleaning device 33 by the first transfer device 20. Then, in the second cleaning device 33, the adhesive on the joint surface S _J of the support wafer S is removed, the bonding surfaces S _J is cleaned (step A11 in FIG. 13). The cleaning of the support wafer S in the step A11 is the same as the removal of the adhesive G on the wafer W to be processed in the step A3 described above, and a description thereof will be omitted.

Thereafter, the support wafer S which joint surface S _J is cleaned is conveyed to station 2 loading and unloading by the first transfer device 20. Thereafter, the support wafer S is unloaded from the loading / unloading station 2 and collected (step A12 in FIG. 13). In this way, a series of separation processing of the processing target wafer W and the supporting wafer S is completed.

  According to the above embodiment, based on the measurement results by the three laser sensors 140, the position of the second holding unit 111, that is, the displacement of the second holding unit 111 is uniform within the surface, that is, Adjust the parallelism. Further, based on the measurement results obtained by the three load cells 160, the position of the first holding unit 110, that is, the parallelism is adjusted so that the load acting on the first holding unit 110 is uniform within the surface. Thus, the parallelism of the 1st holding | maintenance part 110 and the 2nd holding | maintenance part 111 can be adjusted appropriately beforehand. In this case, after that, when the second holding unit 111 is moved in the horizontal direction by the moving mechanism 170 and the wafer to be processed W and the support wafer S are separated, the wafer to be processed W and the support wafer S are damaged. Can be suppressed. Therefore, the to-be-processed wafer W and the support wafer S can be peeled appropriately.

  Further, when the second holding unit 111 is moved in the horizontal direction by the moving mechanism 170 and the wafer W to be processed and the support wafer S are separated, the load acting on the second holding unit 111 is measured in the three load cells 160. To do. Then, based on the load measured by the load cell 160, when the load acting on the second holding unit 111 exceeds the allowable load, the driving of the driving unit 192 of the moving mechanism 170 is stopped. In this case, it is possible to reliably prevent the wafer to be processed W and the support wafer S from being damaged, and the wafer to be processed W and the support wafer S can be appropriately separated.

  According to the peeling system 1 of the above embodiment, after the superposed wafer T is peeled off from the processing target wafer W and the support wafer S in the peeling device 30, the peeled processing target wafer W is peeled off in the first cleaning device 31. In addition to cleaning, the second cleaning device 33 can clean the peeled support wafer S. As described above, according to the present embodiment, a series of stripping processes from the stripping of the processing target wafer W and the supporting wafer S to the cleaning of the processing target wafer W and the cleaning of the supporting wafer S can be efficiently performed in one stripping system 1. Can be done well. Further, in the first cleaning device 31 and the second cleaning device 33, the cleaning of the processing target wafer W and the cleaning of the support wafer S can be performed in parallel. Furthermore, while the wafer to be processed W and the support wafer S are peeled by the peeling apparatus 30, the other wafer to be processed W and the support wafer S can be processed by the first cleaning device 31 and the second cleaning device 33. . Therefore, the wafer W to be processed and the support wafer S can be efficiently peeled, and the throughput of the peeling process can be improved.

  Further, in this series of processes, the process from the separation of the wafer to be processed W and the support wafer S to the post-processing of the wafer to be processed W can be performed, so that the throughput of the wafer processing can be further improved.

  As shown in FIG. 27, the peeling device 30 according to the above embodiment measures a load acting on the first holding unit 110 and serves as another load measuring unit for adjusting the position of the first holding unit 110. The master load cell 400 may be included. The master load cell 400 has better load measurement accuracy than the load cell 160. That is, the master load cell 400 is calibrated, and the load measured by the master load cell 400 is the same as the load that is actually acting. A plurality of, for example, three master load cells 400 are provided on the second holding unit 111. These three master load cells 400 are arranged at positions corresponding to the three load cells 160, respectively.

  In such a case, after adjusting the position of the second holding unit 111 using the laser sensor 140 in the above-described step A1, the second holding unit 111 is raised by the moving mechanism 170 as shown in FIG. Then, the first holding unit 110 and the three master load cells 400 are brought into contact with each other. At this time, the load acting on the first holding unit 110 and the second holding unit 111 is measured by the three master load cells 400. Since the position adjustment of the second holding unit 111 is completed, the position of the first holding unit 110, that is, the parallelism is adjusted so that the loads of the three master load cells 400 are uniform in the plane. . The position adjustment of the first holding unit 110 may be performed by, for example, a position adjusting member (not shown) provided between the first holding unit 110 and the support plate 130, or may be performed manually. May be.

  According to the present embodiment, since the position adjustment of the first holding unit 110 is performed using the master load cell 400 with high load measurement accuracy, the position adjustment of the first holding unit 110 can be performed more appropriately. it can. Accordingly, when the wafer to be processed W and the support wafer S are subsequently peeled off, the wafer to be processed W and the support wafer S can be more reliably prevented from being damaged.

  In the peeling device 30 of the above embodiment, the laser sensor 140 is provided as the displacement measuring unit. However, the displacement measuring unit is not limited to the laser sensor 140, and various means can be used. For example, an ultrasonic sensor or the like can be used as the displacement measuring unit.

  Further, although the load cell 160 is provided as the load measuring unit in the peeling device 30 of the above embodiment, the load measuring unit is not limited to the load cell 160, and various means can be used. Similarly, other load measuring units are not limited to the master load cell 400, and various means can be used. For example, only a pressure sensor, a dial gauge, a spring, or the like can be used as a load measuring unit or other load measuring unit.

  In the above embodiment, the second holding unit 111 is moved in the vertical direction and the horizontal direction in the peeling device 30, but the first holding unit 110 may be moved in the vertical direction and the horizontal direction. Alternatively, both the first holding unit 110 and the second holding unit 111 may be moved in the vertical direction and the horizontal direction.

  In the peeling apparatus 30 described above, the second holding unit 111 is moved in the vertical direction and the horizontal direction. However, the second holding unit 111 is moved only in the horizontal direction, and the moving speed of the second holding unit 111 is increased. It may be changed. Specifically, the moving speed at the start of moving the second holding unit 111 may be reduced, and then the moving speed may be gradually accelerated. That is, when the second holding unit 111 starts to move, the bonding area between the processing target wafer W and the support wafer S is large, and the device on the processing target wafer W is easily affected by the adhesive G. The moving speed of the second holding unit 111 is lowered. Thereafter, as the bonding area between the wafer to be processed W and the support wafer S becomes smaller, the device on the wafer to be processed W becomes less susceptible to the adhesive G, so that the moving speed of the second holding unit 111 is gradually increased. To accelerate. Even in such a case, contact between the device and the support wafer S can be avoided, and damage to the device can be suppressed.

  Further, in the above embodiment, the second holding unit 111 is moved in the vertical direction and the horizontal direction in the peeling apparatus 30. For example, the distance between the device on the processing target wafer W and the support wafer S is as follows. If it is sufficiently large, the second holding part 111 may be moved only in the horizontal direction. In such a case, contact between the device and the support wafer S can be avoided, and movement of the second holding unit 111 can be easily controlled. Furthermore, the second holding unit 111 may be moved only in the vertical direction to peel off the processing target wafer W and the supporting wafer S.

In the peeling apparatus 30 of the above embodiment, a cover (not shown) that covers the processing space between the first holding unit 110 and the second holding unit 111 may be provided. In such a case, by the processing space an atmosphere of inert gas, suppress the wafer W even if heat treated, devices oxide film on the bonding surface W _J of the wafer W is formed can do.

Moreover, in the peeling apparatus 30 of the above embodiment, a porous plate (not shown) that can move in the horizontal direction following the second holding part 111 and supplies an inert gas from a plurality of holes. It may be provided. In such a case, when the second holding unit 111 is moved in order to peel the overlapped wafer T, the bonded surface of the wafer W to be processed exposed by peeling while moving the porous plate following the second holding unit 111. supplying an inert gas to W _J. Then, it is possible to prevent the wafer W even if heat treated, devices oxide film on the bonding surface W _J of wafer W is formed.

  In the peeling apparatus 30 of the above embodiment, the wafer to be processed W and the support wafer S are peeled in a state where the wafer to be processed W is disposed on the upper side and the support wafer S is disposed on the lower side. However, the vertical arrangement of the wafer W to be processed and the support wafer S may be reversed.

  In the above embodiment, the two-fluid nozzle is used as the cleaning liquid nozzle 222 of the first cleaning device 31, the second cleaning device 32, the bonding surface cleaning device 40, and the non-bonding surface cleaning device 41. The form of the nozzle 222 is not limited to this embodiment, and various nozzles can be used. For example, as the cleaning liquid nozzle 222, a nozzle body in which a nozzle for supplying an organic solvent and a nozzle for supplying an inert gas are integrated, a spray nozzle, a jet nozzle, a megasonic nozzle, or the like may be used. In order to improve the throughput of the cleaning process, for example, a cleaning liquid heated to 80 ° C. may be supplied.

Further, in the first cleaning device 31, the second cleaning device 32, the bonding surface cleaning device 40, and the non-bonding surface cleaning device 41, a nozzle for supplying IPA (isopropyl alcohol) may be provided in addition to the cleaning liquid nozzle 222. Good. In this case, after cleaning the processing target wafer W or the supporting wafer S with the cleaning liquid from the cleaning liquid nozzle 222, the cleaning liquid on the processing target wafer W or the supporting wafer S is replaced with IPA. Then, the bonding surfaces W _J and S _{J of the} processing target wafer W or the support wafer S are more reliably cleaned.

  Further, the configuration of the inspection apparatus 7 is not limited to the configuration of the above embodiment. The inspection apparatus 7 can take various configurations as long as it can capture an image of the wafer W to be processed and inspect the presence or absence of the residue of the adhesive G and the residue of the oxide film on the wafer W to be processed.

  In the peeling system 1 of the above embodiment, a temperature adjusting device (not shown) for cooling the processing target wafer W heated by the peeling device 30 to a predetermined temperature may be provided. In such a case, the temperature of the wafer W to be processed is adjusted to an appropriate temperature, so that subsequent processing can be performed more smoothly.

  The superposed wafer T of the above embodiment may be provided with a protective member for suppressing damage to the superposed wafer T, for example, a dicing frame (not shown). The dicing frame is provided on the processing target wafer W side. Even after the wafer to be processed W is peeled from the support wafer S, the thinned wafer W to be processed is subjected to predetermined processing and conveyance while being protected by the dicing frame. Therefore, damage to the processing target wafer W after peeling can be suppressed.

  In the above embodiment, the case where the post-processing station 4 performs post-processing on the wafer to be processed W to produce a product has been described. It can also be applied to. The three-dimensional integration technology is a technology that meets the recent demand for higher integration of semiconductor devices. Instead of arranging a plurality of highly integrated semiconductor devices in a horizontal plane, This is a technique of three-dimensional lamination. Also in this three-dimensional integration technique, it is required to reduce the thickness of wafers to be processed, and the wafers to be processed are bonded to a support wafer to perform a predetermined process.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

DESCRIPTION OF SYMBOLS 1 Peeling system 2 Carry-in / out station 3 Processing station 20 1st conveying apparatus 30 Peeling apparatus 31 1st washing | cleaning apparatus 32 2nd conveying apparatus 33 2nd washing | cleaning apparatus 110 1st holding | maintenance part 111 2nd holding | maintenance part 140 Laser sensor 160 Load cell 170 Movement mechanism 171 Vertical movement unit 172 Horizontal movement unit 192 Drive unit 350 Control unit 400 Master load cell G Adhesive S Support wafer T Superposition wafer W Processed wafer

Claims (13)

A peeling apparatus for peeling a polymerization substrate in which a substrate to be processed and a support substrate are bonded with an adhesive, to the substrate to be processed and the support substrate,
A first holding unit for holding a substrate to be processed;
A second holding unit for holding the support substrate;
A moving mechanism for moving the first holding unit or the second holding unit in a horizontal direction;
A plurality of displacement measuring units for measuring the displacement of the surface of the first holding unit or the second holding unit moved by the moving mechanism;
A plurality of load measuring units for measuring a load acting on the first holding unit or the second holding unit;
The first holding unit or the second holding unit in which the displacement of the surface is measured by the plurality of displacement measuring units so that the displacement is uniform within the surface based on the measurement results by the plurality of displacement measuring units. The second displacement is not measured by the plurality of displacement measuring units so that the load is uniform within the surface based on the measurement result of the plurality of load measuring units. And a control unit for adjusting the position of the first holding unit. When the first holding unit or the second holding unit is moved in the horizontal direction by the moving mechanism to separate the substrate to be processed and the support substrate, the control unit is measured by the plurality of load measuring units. When the load acting on the first holding part or the second holding part moved by the moving mechanism exceeds an allowable load, the first holding part or the second holding part The peeling apparatus according to claim 1, wherein the moving mechanism is controlled to stop the movement of the holding unit. The displacement measuring unit is a laser sensor,
The peeling apparatus according to claim 1, wherein the load measuring unit is a load cell. Measuring a load acting on the first holding unit or the second holding unit, and having a plurality of other load measuring units with better load measurement accuracy than the load measuring unit,
The control unit is configured such that the displacement of the surface is not measured by the plurality of displacement measurement units so that the load is uniform within the surface based on the measurement results by the other load measurement units. The peeling apparatus according to any one of claims 1 to 3, wherein the position of the holding part or the first holding part is adjusted. The peeling apparatus according to claim 4, wherein the other load measuring unit is a load cell. It is a peeling system provided with the peeling apparatus in any one of Claims 1-5,
A processing station comprising: the peeling device; a first cleaning device that cleans the substrate to be processed peeled by the peeling device; and a second cleaning device that cleans the support substrate peeled by the peeling device. ,
A loading / unloading station for loading / unloading a substrate to be processed, a support substrate or a superposed substrate with respect to the processing station;
A peeling system comprising: a transfer device that transfers a substrate to be processed, a support substrate, or a superposed substrate between the processing station and the carry-in / out station. Using a peeling apparatus, a peeling method for peeling a polymerization substrate in which a substrate to be processed and a support substrate are bonded with an adhesive, to the substrate to be processed and the support substrate,
The peeling device is
A first holding unit for holding a substrate to be processed;
A second holding unit for holding the support substrate;
A moving mechanism for moving the first holding unit or the second holding unit in a horizontal direction;
A plurality of displacement measuring units for measuring the displacement of the surface of the first holding unit or the second holding unit moved by the moving mechanism;
A plurality of load measuring units for measuring a load acting on the first holding unit or the second holding unit,
The peeling method includes:
The first holding unit or the second holding unit in which the displacement of the surface is measured by the plurality of displacement measuring units so that the displacement is uniform within the surface based on the measurement results by the plurality of displacement measuring units. The second displacement is not measured by the plurality of displacement measuring units so that the load is uniform within the surface based on the measurement result of the plurality of load measuring units. A position adjusting step of adjusting the position of the holding portion or the first holding portion;
A peeling method comprising: a peeling step of peeling the substrate to be processed and the support substrate by moving the first holding part or the second holding part in a horizontal direction by the moving mechanism. In the peeling step, the load that is measured by the plurality of load measuring units and that acts on the first holding unit or the second holding unit moved by the moving mechanism exceeds an allowable load. In this case, the peeling mechanism according to claim 7, wherein the moving mechanism is controlled to stop the movement of the first holding part or the second holding part. The displacement measuring unit is a laser sensor,
The peeling method according to claim 7 or 8, wherein the load measuring unit is a load cell. The peeling apparatus measures a load acting on the first holding unit or the second holding unit, and has a plurality of other load measuring units with better load measurement accuracy than the load measuring unit,
In the position adjusting step, the second displacement measurement unit does not measure the displacement of the surface based on the measurement results of the plurality of other load measurement units so that the load is uniform within the surface. The peeling method according to any one of claims 7 to 9, wherein the position of the holding portion or the position of the first holding portion is adjusted. The peeling method according to claim 10, wherein the other load measuring unit is a load cell. A program that operates on a computer of a control unit that controls the peeling device in order to cause the peeling device to execute the peeling method according to any one of claims 7 to 11. A readable computer storage medium storing the program according to claim 12.

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