TWI633195B - Copper foil for flexible printed circuit board, copper-clad laminate using the same, flexible printed circuit board, and electronic device - Google Patents

Copper foil for flexible printed circuit board, copper-clad laminate using the same, flexible printed circuit board, and electronic device Download PDF

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TWI633195B
TWI633195B TW106100661A TW106100661A TWI633195B TW I633195 B TWI633195 B TW I633195B TW 106100661 A TW106100661 A TW 106100661A TW 106100661 A TW106100661 A TW 106100661A TW I633195 B TWI633195 B TW I633195B
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copper foil
printed circuit
flexible printed
copper
circuit board
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TW201734220A (en
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坂東慎介
冠和樹
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Jx金屬股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/02Alloys based on copper with tin as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/04Alloys based on copper with zinc as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/06Alloys based on copper with nickel or cobalt as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0393Flexible materials
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/08PCBs, i.e. printed circuit boards

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

提供一種彎折性及蝕刻性優異之可撓性印刷基板用銅箔。 Provided is a copper foil for a flexible printed circuit board having excellent bendability and etching properties.

一種可撓性印刷基板用銅箔,係由99.0質量%以上之Cu、剩餘部分為不可避免之雜質構成之銅箔,平均結晶粒徑為0.5~4.0μm,且拉伸強度為235~290MPa。 A copper foil for a flexible printed circuit board is a copper foil composed of 99.0% by mass or more of Cu, and the remainder is unavoidable impurities. The average crystal grain size is 0.5 to 4.0 μm, and the tensile strength is 235 to 290 MPa.

Description

可撓性印刷基板用銅箔、使用其之覆銅積層體、可撓性印刷基板及電子機器 Copper foil for flexible printed circuit board, copper-clad laminate using the same, flexible printed circuit board, and electronic device

本發明係關於一種用於可撓性印刷基板等配線構件之較佳之銅箔、使用其之覆銅積層體、可撓性配線板及電子機器。 The present invention relates to a preferred copper foil for a wiring member such as a flexible printed circuit board, a copper-clad laminate using the same, a flexible wiring board, and an electronic device.

可撓性印刷基板(可撓性配線板,以下稱為「FPC」)因具有可撓性而被廣泛地用於電子電路之彎折部或可動部。例如,於HDD或DVD及CD-ROM等碟片相關機器之可動部、或摺疊式行動電話機之彎折部等使用FPC。 Flexible printed circuit boards (flexible wiring boards, hereinafter referred to as "FPCs") are widely used in bent or movable parts of electronic circuits because of their flexibility. For example, FPC is used for the movable part of HDD or DVD- and CD-ROM-related equipment, or the folding part of a folding mobile phone.

FPC係藉由對由銅箔與樹脂積層而成之Copper Clad Laminate(覆銅積層體,以下稱為CCL)進行蝕刻而形成配線,且其上由被稱為覆蓋層(cover lay)之樹脂層被覆而成者。於積層覆蓋層之前階段,作為用以提高銅箔與覆蓋層之密接性之表面改質步驟之一部分,進行銅箔表面之蝕刻。又,為降低銅箔之厚度而使撓曲性提高,亦有進行減厚蝕刻之情形。 FPC is formed by etching a Copper Clad Laminate (copper-clad laminate, hereinafter referred to as CCL) formed by laminating a copper foil and a resin, and a resin layer called a cover lay is formed thereon. Covered by. At the stage before laminating the cover layer, as part of the surface modification step to improve the adhesion between the copper foil and the cover layer, the surface of the copper foil is etched. In addition, in order to reduce the thickness of the copper foil and improve the flexibility, the thickness may be reduced by etching.

此外,伴隨電子機器之小型、薄型、高性能化,要求將FPC以高密度構裝於該等機器之內部,但為了進行高密度構裝,需要將FPC彎折而收容於小型化機器之內部亦即高的彎折性。 In addition, along with the miniaturization, thinness, and high performance of electronic devices, it is required that FPCs be installed inside these devices at a high density. However, in order to perform high-density installations, FPCs must be folded and housed inside miniaturized devices That is, high bendability.

另一方面,已開發出改善了以IPC撓曲性為代表之高週期撓曲性之銅箔(專利文獻1、2)。 On the other hand, copper foils have been developed that have improved high-cycle flexibility as typified by IPC flexibility (Patent Documents 1 and 2).

[專利文獻1]日本專利特開2010-100887號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2010-100887

[專利文獻2]日本專利特開2009-111203號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2009-111203

然而,如上所述為以高密度構裝FPC,需要提高以MIT耐折性為代表之彎折性,就習知之銅箔而言,存在彎折性之改善稱不上充分之問題。 However, as described above, in order to construct FPC with a high density, it is necessary to improve the bending property represented by the MIT folding resistance, and the conventional copper foil has a problem that the improvement of the bending property is not sufficient.

又,伴隨電子機器之小型、薄型、高性能化,FPC之電路寬度、間隙寬度均微細化至20~30μm左右,藉由蝕刻而形成電路時有蝕刻因子或電路直線性易劣化之問題,亦要求解決此問題。 In addition, along with the miniaturization, thinness, and high performance of electronic devices, the circuit width and gap width of FPC have been reduced to about 20 to 30 μm. When etching a circuit, there is a problem that the etching factor or the linearity of the circuit is easily deteriorated. Asked to resolve this issue.

本發明係為解決上述課題而完成者,其目的在於提供一種彎折性及蝕刻性優異之可撓性印刷基板用銅箔、使用其之覆銅積層體、可撓性印刷基板及電子機器。 The present invention has been made to solve the above-mentioned problems, and an object thereof is to provide a copper foil for a flexible printed circuit board having excellent bendability and etching properties, a copper-clad laminate, a flexible printed circuit board, and an electronic device using the same.

本發明人等進行各種研究後之結果發現,藉由將銅箔再結晶後之晶粒微細化而可提高強度從而使彎折性提高。其原因在於,根據霍爾-貝曲(Hall-Petch)公式,使晶粒越微細化則強度越高,彎折性亦越高。但是,若使晶粒過度微細化,則強度會變得過高而使抗撓剛度變大,回彈(spring back)變大從而不適合可撓性印刷基板用途。因此,亦規定結晶粒徑之範圍。 As a result of various studies conducted by the present inventors, it has been found that by refining the crystal grains of the copper foil after recrystallization, the strength can be increased and the bendability can be improved. The reason is that according to the Hall-Petch formula, the finer the crystal grains, the higher the strength and the higher the bendability. However, if the crystal grains are excessively refined, the strength will become too high, the flexural rigidity will increase, and back) becomes large and is not suitable for flexible printed circuit board applications. Therefore, the range of the crystal grain size is also specified.

又,藉由將結晶粒徑微細化至近年來FPC之20~30μm左右之電路寬度之約1/10左右,亦可改善藉由蝕刻形成電路時之蝕刻因子或電路直線性。 In addition, by refining the crystal grain size to about 1/10 of the circuit width of about 20 to 30 μm of FPC in recent years, the etching factor or circuit linearity when forming a circuit by etching can also be improved.

即,本發明之可撓性印刷基板用銅箔係由99.0質量%以上之Cu、剩餘部分為不可避免之雜質構成之銅箔,平均結晶粒徑為0.5~4.0μm,且拉伸強度為235~290MPa。 That is, the copper foil for a flexible printed circuit board of the present invention is a copper foil composed of 99.0% by mass or more of Cu, and the remainder is unavoidable impurities. The average crystal grain size is 0.5 to 4.0 μm, and the tensile strength is 235. ~ 290MPa.

本發明之可撓性印刷基板用銅箔較佳由符合JIS-H3100(C1100)規格之精銅或JIS-H3100(C1011)之無氧銅構成。 The copper foil for a flexible printed circuit board of the present invention is preferably composed of fine copper conforming to JIS-H3100 (C1100) standard or oxygen-free copper conforming to JIS-H3100 (C1011).

進而,較佳為含有合計為0.003~0.825質量%之選自P、Ti、Sn、Ni、Be、Zn、In及Mg之群中之1種以上的添加元素。 Furthermore, it is preferable to contain one or more kinds of additive elements selected from the group consisting of P, Ti, Sn, Ni, Be, Zn, In, and Mg in a total amount of 0.003 to 0.825% by mass.

較佳於300℃進行30分鐘之熱處理後之上述平均結晶粒徑為0.5~4.0μm,且上述拉伸強度為235~290MPa。 The average crystal grain size after the heat treatment at 300 ° C. for 30 minutes is preferably 0.5 to 4.0 μm, and the tensile strength is 235 to 290 MPa.

較佳將厚度25μm之聚醯亞胺樹脂膜積層於上述銅箔之單面而成之覆銅積層體以彎曲半徑0.05mm且以上述銅箔成為外側之方式進行180度密接彎曲,然後使彎折部恢復至0度,重複此試驗3次之後,以200倍觀察上述銅箔時,未目視辨認到龜裂。 It is preferable that the copper-clad laminate formed by laminating a polyimide resin film having a thickness of 25 μm on one side of the above-mentioned copper foil is bent tightly at 180 degrees with a bending radius of 0.05 mm and the above-mentioned copper foil becomes the outside, and The folded portion returned to 0 degrees, and after repeating this test 3 times, when the copper foil was observed at 200 times, no crack was visually recognized.

本發明之覆銅積層體係將上述可撓性印刷基板用銅箔與樹脂層積層而成。 The copper-clad laminated system of the present invention is formed by laminating the above-mentioned copper foil for a flexible printed circuit board and a resin.

本發明之可撓性印刷基板係使用上述覆銅積層體於上述銅箔上形成電路而成。 The flexible printed circuit board of the present invention is formed by forming a circuit on the copper foil using the copper-clad laminate.

較佳為上述電路之L/S為40/40~15/15(μm/μm)。再者,所謂電路之L/S(線與間隙)係構成電路之配線之寬度(L:線)、與相鄰之配線之間隔(S: 間隙)之比。L採用電路中之L的最小值,S採用電路中之S的最小值。 The L / S of the above circuit is preferably 40/40 to 15/15 (μm / μm). In addition, the so-called L / S (line and gap) of a circuit is the width (L: line) of the wiring constituting the circuit, and the interval (S: Clearance). L uses the minimum value of L in the circuit, and S uses the minimum value of S in the circuit.

再者,L及S只要為15~40μm即可,兩者不必為相同之值。例如,亦可取L/S=20.5/35、35/17等值。 In addition, L and S only need to be 15 to 40 μm, and they do not need to be the same value. For example, values such as L / S = 20.5 / 35, 35/17 can also be taken.

本發明之電子機器係使用上述可撓性印刷基板而成。 The electronic device of the present invention is formed using the above-mentioned flexible printed circuit board.

根據本發明,可獲得彎折性及蝕刻性優異之可撓性印刷基板用銅箔。 According to the present invention, a copper foil for a flexible printed circuit board having excellent bendability and etching properties can be obtained.

10‧‧‧壓縮試驗機 10‧‧‧ compression test machine

10a‧‧‧下模 10a‧‧‧mould

10b‧‧‧上模 10b‧‧‧ Upper mold

20‧‧‧板 20‧‧‧board

30‧‧‧CCL樣品 30‧‧‧CCL samples

30s‧‧‧彎折前端部 30s‧‧‧Bend front

圖1係表示CCL之彎折性試驗方法之圖。 FIG. 1 is a diagram showing a bending test method of CCL.

以下,對本發明之銅箔之實施形態進行說明。再者,本發明中之%只要未特別說明,則表示質量%。 Hereinafter, embodiments of the copper foil of the present invention will be described. In addition,% in the present invention means mass% unless otherwise specified.

<組成> <Composition>

本發明之銅箔係由99.0質量%以上之Cu、剩餘部分為不可避免之雜質構成。 The copper foil of the present invention is composed of 99.0% by mass or more of Cu, and the remainder is unavoidable impurities.

如上所述,於本發明中藉由將銅箔再結晶後之晶粒微細化而提高強度從而使彎折性提高。 As described above, in the present invention, by refining the crystal grains of the copper foil after recrystallization, the strength is increased and the bendability is improved.

但是,於上述純銅系之組成之情形時,晶粒之微細化困難,故於冷軋時之初期僅進行一次再結晶退火,以後不進行再結晶退火,以此藉由冷軋而大量地導入加工應變,使動態再結晶產生,從而可實現晶粒之微細化。 However, in the case of the above-mentioned pure copper-based composition, it is difficult to refine the crystal grains. Therefore, in the initial stage of cold rolling, recrystallization annealing is performed only once, and thereafter, recrystallization annealing is not performed. The processing strain causes dynamic recrystallization to occur, thereby enabling the refinement of crystal grains.

又,為使冷軋中之加工應變增大,作為最終冷軋(於反覆進行退火與軋製之所有步驟中,於最後之退火後進行之精軋)之加工度,較佳為η=ln(最終冷軋前之板厚/最終冷軋後之板厚)=3.5~7.5。 In addition, in order to increase the processing strain in cold rolling, as the workability of the final cold rolling (finish rolling performed after the final annealing in all steps of annealing and rolling repeatedly), it is preferable that η = ln (Sheet thickness before final cold rolling / sheet thickness after final cold rolling) = 3.5 ~ 7.5.

於η未達3.5之情形時,加工時之應變之累積較小,再結晶粒之核變少,故有再結晶粒變粗大之傾向。於η大於7.5之情形時,應變過剩地累積而成為晶粒成長之驅動力,有晶粒變粗大之傾向。更佳為η=5.5~7.5。 When η is less than 3.5, the accumulation of strain during processing is small, and the nucleus of recrystallized grains is reduced, so there is a tendency that the recrystallized grains become coarse. When η is larger than 7.5, excessive strain accumulates and becomes a driving force for grain growth, and the grain tends to become coarse. More preferably, η = 5.5 to 7.5.

又,作為使晶粒微細化之添加元素,若相對於上述組成含有合計為0.003~0.825質量%之選自P、Ti、Sn、Ni、Be、Zn、In及Mg之群中之1種以上之添加元素,則可更容易地實現晶粒之微細化。該等添加元素於冷軋時使位錯密度增加,故可更容易地實現晶粒之微細化。又,若於冷軋時之初期僅進行一次再結晶退火,以後不進行再結晶退火,則藉由冷軋而大量地導入加工應變,使動態再結晶產生,從而可更確實地實現晶粒之微細化。 In addition, as an additive element for miniaturizing crystal grains, if it contains 0.003 to 0.825 mass% with respect to the above-mentioned composition, one or more selected from the group consisting of P, Ti, Sn, Ni, Be, Zn, In, and Mg. With the addition of elements, the miniaturization of crystal grains can be achieved more easily. These added elements increase the dislocation density during cold rolling, so that it is easier to refine the crystal grains. In addition, if recrystallization annealing is performed only once at the beginning of cold rolling, and recrystallization annealing is not performed thereafter, a large amount of processing strain is introduced by cold rolling to generate dynamic recrystallization, so that the grains can be more reliably realized. Miniaturization.

若上述添加元素之合計含量未達0.003質量%,則晶粒之微細化變得困難,若超過0.825質量%,則導電率降低。又,有如下情形,即,再結晶溫度上升而與樹脂積層時不會再結晶,強度變得過高從而導致銅箔及CCL之彎折性變差。 If the total content of the above-mentioned added elements is less than 0.003% by mass, it becomes difficult to refine the crystal grains, and if it exceeds 0.825% by mass, the conductivity is reduced. In addition, there is a case where the recrystallization temperature does not recrystallize when it is laminated with the resin, and the strength becomes too high, which results in poor bendability of the copper foil and CCL.

再者,作為使銅箔再結晶後之晶粒微細化的方法,除增加添加元素之方法外,可舉出進行聚合軋製之方法、利用電解銅箔進行電沈積時使用脈衝電流之方法、或利用電解銅箔向電解液中適量添加硫脲或膠等之方法。 In addition, as a method for refining the crystal grains of the copper foil after recrystallization, in addition to a method of adding an additional element, a method of polymerizing rolling, a method of using a pulse current when using electrolytic copper foil for electrodeposition, Or use electrolytic copper foil to add an appropriate amount of thiourea or glue to the electrolyte.

亦可將本發明之銅箔設為由符合JIS-H3100(C1100)規格之 精銅(TPC)或JIS-H3100(C1011)之無氧銅(OFC)構成之組成。 The copper foil of the present invention can also be made of a copper foil conforming to JIS-H3100 (C1100). Composition of refined copper (TPC) or JIS-H3100 (C1011) oxygen-free copper (OFC).

又,對於上述TPC或OFC,亦可設為使之含有上述添加元素而成之組成。 Moreover, the said TPC or OFC can also be set as the composition which contains the said addition element.

<平均結晶粒徑> <Average crystal grain size>

銅箔之平均結晶粒徑為0.5~4.0μm。若平均結晶粒徑未達0.5μm,則強度變得過高,抗撓剛度變大,回彈變大而不適合可撓性印刷基板用途。若平均結晶粒徑超過4.0μm,則無法實現晶粒之微細化,難以提高強度而使彎折性提高,並且蝕刻因子或電路直線性變差而導致蝕刻性降低。 The average crystal grain size of the copper foil is 0.5 to 4.0 μm. If the average crystal grain size is less than 0.5 μm, the strength will be too high, the flexural rigidity will increase, and the springback will increase, which is not suitable for flexible printed circuit board applications. If the average crystal grain size exceeds 4.0 μm, it is impossible to achieve miniaturization of the crystal grains, it is difficult to increase the strength to improve the bendability, and the etching factor or the linearity of the circuit is deteriorated to cause a decrease in the etchability.

為避免誤差,平均結晶粒徑之測定係對箔表面以100μm×100μm之視野觀察3視野以上而進行。箔表面之觀察可使用SIM(Scanning Ion Microscope)或SEM(Scanning Electron Microscope),根據JIS H 0501而求出平均結晶粒徑。 In order to avoid errors, the average crystal grain size is measured by observing the surface of the foil with a field of view of 100 μm × 100 μm for 3 or more fields. Observation of the foil surface can be performed using SIM (Scanning Ion Microscope) or SEM (Scanning Electron Microscope), and the average crystal grain size can be determined in accordance with JIS H 0501.

但是,雙晶係視為個別之晶粒而測定。 However, the twin crystal system is measured as individual crystal grains.

<拉伸強度(TS)> <Tensile strength (TS)>

銅箔之拉伸強度為235~290MPa。如上所述,藉由將晶粒微細化而使拉伸強度提高。若拉伸強度未達235MPa,則難以提高強度而使彎折性提高。若拉伸強度超過290MPa,則強度會變得過高而使抗撓剛度過大,回彈變大從而不適合可撓性印刷基板用途。 The tensile strength of copper foil is 235 ~ 290MPa. As described above, the fineness of the crystal grains improves the tensile strength. If the tensile strength is less than 235 MPa, it will be difficult to increase the strength and improve the bendability. If the tensile strength exceeds 290 MPa, the strength becomes too high, the flexural rigidity becomes too large, and the springback becomes large, making it unsuitable for flexible printed circuit board applications.

拉伸強度係藉由依據IPC-TM650之拉伸試驗,以試驗片寬度12.7mm、室溫(15~35℃)、拉伸速度50.8mm/min、及量規長度50mm,於與銅箔之軋製方向(或MD方向)平行之方向進行拉伸試驗。 The tensile strength is based on the tensile test according to IPC-TM650. The width of the test piece is 12.7mm, the room temperature (15 ~ 35 ° C), the tensile speed is 50.8mm / min, and the gauge length is 50mm. The tensile test was performed in a direction parallel to the rolling direction (or MD direction).

<300℃ 30分鐘之熱處理> <300 ° C for 30 minutes heat treatment>

將銅箔於300℃進行30分鐘之熱處理後之平均結晶粒徑可為0.5~4.0μm,且拉伸強度可為235~290MPa。 After the copper foil is heat-treated at 300 ° C. for 30 minutes, the average crystal grain size can be 0.5 to 4.0 μm, and the tensile strength can be 235 to 290 MPa.

本發明之銅箔用於可撓性印刷基板,此時,將由銅箔與樹脂積層所得之CCL於200~400℃進行用以使樹脂硬化之熱處理,故藉由再結晶而有可能導致晶粒粗大化。 The copper foil of the present invention is used for a flexible printed circuit board. At this time, the CCL obtained by laminating the copper foil and the resin is subjected to a heat treatment at 200 to 400 ° C to harden the resin. Therefore, recrystallization may cause crystal grains. Coarse.

因此,在與樹脂積層之前後,銅箔之平均結晶粒徑及拉伸強度發生變化。因此,本申請案之請求項1之可撓性印刷基板用銅箔規定了成為與樹脂積層後之覆銅積層體之後的已接受樹脂之硬化熱處理之狀態之銅箔。 Therefore, before and after lamination with the resin, the average crystal grain size and tensile strength of the copper foil change. Therefore, the copper foil for a flexible printed circuit board of claim 1 of the present application specifies a copper foil in a state where the resin has been cured and heat-treated after the copper-clad laminate is laminated with the resin.

另一方面,本申請案之請求項4之可撓性印刷基板用銅箔規定了已對與樹脂積層之前之銅箔進行上述熱處理時之狀態。該300℃ 30分鐘之熱處理係模仿CCL積層時使樹脂硬化熱處理之溫度條件者。 On the other hand, the copper foil for flexible printed circuit board of claim 4 of the present application specifies the state when the above-mentioned heat treatment has been performed on the copper foil before being laminated with the resin. The heat treatment at 300 ° C for 30 minutes is a simulation of the temperature conditions at which the resin is hardened and heat-treated when the CCL is laminated.

本發明之銅箔例如可以如下方式而製造。首先,於銅錠添加上述添加物而熔解、鑄造之後,進行熱軋、冷軋與退火,且進行上述之最終冷軋,藉此可製造箔。 The copper foil of this invention can be manufactured as follows, for example. First, after adding the above-mentioned additives to a copper ingot, melting and casting, hot rolling, cold rolling, and annealing are performed, and the above-mentioned final cold rolling is performed, whereby a foil can be manufactured.

<覆銅積層體及可撓性印刷基板> <Copper-clad laminate and flexible printed circuit board>

又,對本發明之銅箔(1)澆鑄(casting)樹脂前驅物(例如被稱為清漆之聚醯亞胺前驅物)並加熱以使其等聚合、及(2)使用與基底膜同種之熱塑性接著劑將基底膜層壓於本發明之銅箔,藉此獲得由銅箔與樹脂基材之2層構成之覆銅積層體(CCL)。又,將塗附有接著劑之基底膜層壓於本發明之銅箔,藉此獲得由銅箔、樹脂基材及其間之接著層之3層構成之覆銅積層體(CCL)。於該等CCL製造時銅箔受到熱處理而再結晶化。 Furthermore, the copper foil (1) of the present invention is casted with a resin precursor (for example, a polyimide precursor called varnish) and heated to polymerize it, and (2) a thermoplastic of the same type as the base film is used The adhesive film is used to laminate a base film to the copper foil of the present invention, thereby obtaining a copper-clad laminate (CCL) composed of two layers of a copper foil and a resin substrate. Further, a base film coated with an adhesive was laminated on the copper foil of the present invention, thereby obtaining a copper-clad laminate (CCL) composed of three layers of a copper foil, a resin substrate, and an adhesive layer therebetween. During the production of these CCLs, the copper foil is heat-treated and recrystallized.

對該等使用光微影技術而形成電路,且視需要對電路實施鍍覆,並將 覆蓋層膜層壓,以此獲得可撓性印刷基板(可撓性配線板)。 To form a circuit using photolithography technology, and plating the circuit as necessary, and The coverlay film is laminated to obtain a flexible printed circuit board (flexible wiring board).

因此,本發明之覆銅積層體係將銅箔與樹脂層積層而成。又,本發明之可撓性印刷基板係於覆銅積層體之銅箔上形成電路而成。 Therefore, the copper-clad laminated system of the present invention is formed by laminating a copper foil and a resin. The flexible printed circuit board of the present invention is formed by forming a circuit on a copper foil of a copper-clad laminate.

作為樹脂層,可舉出PET(聚對酞酸乙二酯)、PI(聚醯亞胺)、LCP(液晶聚合物)、PEN(聚萘二甲酸乙二酯,polyethylene naphthalate),但並不限定於此。又,作為樹脂層,亦可使用該等之樹脂膜。 Examples of the resin layer include PET (polyethylene terephthalate), PI (polyimide), LCP (liquid crystal polymer), and PEN (polyethylene naphthalate). Limited to this. As the resin layer, such a resin film may be used.

作為樹脂層與銅箔之積層方法,亦可於銅箔之表面塗佈成為樹脂層之材料而進行加熱成膜。又,亦可使用樹脂膜作為樹脂層,且在樹脂膜與銅箔之間使用以下之接著劑,還可不使用接著劑而將樹脂膜熱壓接於銅箔。但是,就不對樹脂膜施加多餘之熱之觀點而言,較佳為使用接著劑。 As a method for laminating a resin layer and a copper foil, the surface of the copper foil may be coated with a material that becomes a resin layer and then heated to form a film. Further, a resin film may be used as the resin layer, and the following adhesive may be used between the resin film and the copper foil, or the resin film may be thermally compression-bonded to the copper foil without using an adhesive. However, from the viewpoint of not applying excessive heat to the resin film, it is preferable to use an adhesive.

於使用膜作為樹脂層之情形時,將該膜經由接著劑層而積層於銅箔即可。該情形時,較佳為使用與膜相同成分之接著劑。例如,於使用聚醯亞胺膜作為樹脂層之情形時,較佳為接著劑層亦使用聚醯亞胺系接著劑。再者,此處所謂之聚醯亞胺接著劑係指包含醯亞胺鍵之接著劑,亦包含聚醚醯亞胺等。 When a film is used as the resin layer, the film may be laminated on a copper foil via an adhesive layer. In this case, it is preferable to use an adhesive having the same composition as the film. For example, in the case where a polyimide film is used as the resin layer, it is preferable to use a polyimide-based adhesive in the adhesive layer. Here, the polyfluorene imine adhesive refers to an adhesive containing a fluorene imine bond, and also includes polyether fluorene imine and the like.

再者,本發明並不限定於上述實施形態。又,只要發揮本發明之作用效果,則上述實施形態中之銅合金亦可含有其他成分。 The present invention is not limited to the embodiments described above. Moreover, as long as the effect of this invention is exhibited, the copper alloy in the said embodiment may contain other components.

例如,亦可對銅箔之表面實施粗化處理、防銹處理、耐熱處理、或基於該等之組合之表面處理。 For example, the surface of the copper foil may be subjected to a roughening treatment, an anti-rust treatment, a heat-resistant treatment, or a surface treatment based on a combination of these.

[實施例] [Example]

其次,舉出實施例而更詳細地說明本發明,但本發明並不限定於該等。於純度99.9%以上之電解銅分別添加表1所示之元素,於Ar環 境中鑄造而獲得鑄塊。鑄塊中之氧含量未達15ppm。將該鑄塊以900℃進行均質化退火後,熱軋而形成厚度30mm之後,進行冷軋至厚度為14mm之後,進行1次退火之後對表面進行面削,於表1所示之加工度η進行最終冷軋而獲得最終厚度17μm之箔。對所獲得之箔實施300℃×30分鐘之熱處理,獲得銅箔樣品。 Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these. Add the elements shown in Table 1 to electrolytic copper with a purity of 99.9% or more. Casting in the environment to obtain ingots. The oxygen content in the ingot did not reach 15 ppm. The ingot was homogenized and annealed at 900 ° C, then hot-rolled to a thickness of 30 mm, and then cold-rolled to a thickness of 14 mm. After annealing, the surface was subjected to surface shaving, and the processing degrees η shown in Table 1 Final cold rolling was performed to obtain a foil having a final thickness of 17 μm. The obtained foil was heat-treated at 300 ° C for 30 minutes to obtain a copper foil sample.

<A.銅箔樣品之評價> <A. Evaluation of copper foil samples>

1.導電率 Electrical conductivity

對上述熱處理後之各銅箔樣品,根據JIS H 0505藉由4端子法而測定25℃之導電率(%IACS)。 For each copper foil sample after the heat treatment, the conductivity (% IACS) at 25 ° C. was measured by the 4-terminal method in accordance with JIS H 0505.

若導電率為75%IACS以上,則導電性為良好。 When the conductivity is 75% IACS or more, the conductivity is good.

2.粒徑 2.Particle size

使用SEM(Scanning Electron Microscope)觀察上述熱處理後之各銅箔樣品表面,根據JIS H 0501而求出平均粒徑。但是,雙晶係視為個別之晶粒而進行測定。測定區域設為表面之100μm×100μm。 The surface of each copper foil sample after the heat treatment was observed using a SEM (Scanning Electron Microscope), and the average particle diameter was determined in accordance with JIS H 0501. However, the twin crystal system is measured as individual crystal grains. The measurement area is 100 μm × 100 μm on the surface.

3.銅箔之彎折性(MIT耐折性) 3. Bending property of copper foil (MIT resistance)

對上述熱處理後之各銅箔樣品,根據JIS P 8115而測定MIT耐折次數(往復彎折次數)。此處,彎折夾之R設為0.38,負載設為500g。 With respect to each of the copper foil samples after the heat treatment, the number of times of MIT folding resistance (the number of times of reciprocating bending) was measured in accordance with JIS P 8115. Here, R of the bending clip is set to 0.38, and the load is set to 500 g.

若MIT耐折次數為75次以上,則銅箔之彎折性為良好。 When the MIT folding resistance number is 75 or more, the bendability of the copper foil is good.

4.銅箔之拉伸強度 4. Tensile strength of copper foil

對上述熱處理後之各銅箔樣品,藉由依據IPC-TM650之拉伸試驗於上述條件下測定拉伸強度。 The tensile strength of each copper foil sample after the heat treatment was measured under the above conditions by a tensile test according to IPC-TM650.

<B.CCL之評價> <Evaluation of B.CCL>

5.CCL之彎折性 5.Bending of CCL

對於最終冷軋後並未進行上述熱處理之銅箔樣品(熱處理前之銅箔)之單面進行銅粗化鍍覆。作為銅粗化鍍浴,使用Cu:10-25g/L、硫酸:20-100g/L之組成,且於浴溫20-40℃、電流密度30-70A/dm2進行1~5秒電鍍,使銅附著量為20g/dm2Copper roughening was performed on one side of a copper foil sample (copper foil before heat treatment) that had not been subjected to the above heat treatment after final cold rolling. As a copper roughening plating bath, a composition of Cu: 10-25 g / L and sulfuric acid: 20-100 g / L is used, and plating is performed at a bath temperature of 20-40 ° C and a current density of 30-70 A / dm 2 for 1 to 5 seconds. The copper adhesion amount was 20 g / dm 2 .

於銅箔樣品之粗化鍍覆面積層聚醯亞胺膜(宇部興產股份有限公司製造之製品名「Upilex VT」,厚度25μm),以加熱壓製(4MPa)實施300℃×30分鐘之熱處理而貼合,獲得CCL樣品。關於彎折試驗所使用之CCL樣品之尺寸,軋製方向(長邊方向)為50mm,寬度方向為12.7mm。 A layer of polyimide film (the product name "Upilex VT", manufactured by Ube Kosan Co., Ltd., with a thickness of 25 μm) was applied to the roughened plated area of the copper foil sample, and heat-pressed (4 MPa) was subjected to a heat treatment at 300 ° C for 30 minutes to Lamination to obtain CCL samples. Regarding the size of the CCL sample used in the bending test, the rolling direction (long side direction) was 50 mm, and the width direction was 12.7 mm.

如圖1所示,對於該CCL樣品30,以銅箔面成為外側之方式夾入0.1mm厚之板20(符合JIS-H3130(C1990)規格之鈦銅板),於長邊方向之中央對折,且配置於壓縮試驗機10(島津製作所公司製造之製品名「Autograph AGS」)之下模10a與上模10b之間。 As shown in Fig. 1, for this CCL sample 30, a 0.1 mm thick plate 20 (a titanium copper plate conforming to JIS-H3130 (C1990) specifications) was sandwiched so that the copper foil surface became the outer side, and folded in half at the center of the long side direction. It is arranged between the lower mold 10a and the upper mold 10b of the compression tester 10 (product name "Autograph AGS" manufactured by Shimadzu Corporation).

於該狀態使上模10b下降而將CCL樣品30以於對折部分密接於板20之方式彎折(圖1(a))。立即將CCL樣品30自壓縮試驗機10取出,對於對折部分之「橫向V字」狀之彎折前端部30s使用顯微鏡(基恩士製造公司製造之製品名「單觸發3D測定顯微鏡VR-3000」以倍率200倍利用目視確認銅箔面有無破裂。再者,彎折前端部30s相當於彎曲半徑0.05mm之180度密接彎曲。 In this state, the upper mold 10b is lowered and the CCL sample 30 is bent so that the half-folded portion is in close contact with the plate 20 (FIG. 1 (a)). Immediately remove the CCL sample 30 from the compression tester 10, and use a microscope (the product name "Single Trigger 3D Measurement Microscope VR-3000" manufactured by Keyence Manufacturing Co., Ltd.) for the "transverse V" -shaped bending front end portion 30s of the folded portion The presence or absence of cracks in the copper foil surface was visually checked at a magnification of 200 times. In addition, the bending front end portion 30s corresponds to a 180-degree close-contact bending with a bending radius of 0.05 mm.

於確認到破裂之情形時結束試驗,將進行圖1(a)之壓縮之次數設為CCL之彎折次數。 The test was terminated when cracking was confirmed, and the number of times of compression in FIG. 1 (a) was set as the number of times of bending of CCL.

於未確認到破裂之情形時,如圖1(b)所示,以使彎折前 端部30s朝上之方式將CCL樣品30配置於壓縮試驗機10之下模10a與上模10b之間,且於該狀態下使上模10b下降而將彎折前端部30s打開。 When no crack is confirmed, as shown in Figure 1 (b), The CCL sample 30 is placed between the lower mold 10a and the upper mold 10b of the compression tester 10 with the end portion 30s facing upward, and the upper mold 10b is lowered in this state to open the bent front end portion 30s.

繼而,再次進行圖1(a)之彎折,同樣地目視確認彎折前端部30s有無破裂。以下,同樣地反覆執行圖1(a)~(b)之步驟,決定彎折次數。 Next, the bending shown in FIG. 1 (a) was performed again, and the presence or absence of cracking at the bending front end portion 30 s was similarly confirmed visually. Hereinafter, the steps of (a) to (b) of FIG. 1 are repeatedly performed in the same manner to determine the number of bending times.

若CCL之彎折次數為3次以上,則CCL之彎折性為良好。 If the number of bending times of the CCL is 3 or more, the bending property of the CCL is good.

6.蝕刻性 6. Etching

於上述CCL樣品之銅箔部分形成有L/S(線/間隙)=40/40μm、35/35μm、25/25μm、20/20μm、及15/15μm之短條狀之電路。作為比較,與市售之軋製銅箔(精銅箔)同樣地形成電路。繼而,利用顯微鏡目視判定蝕刻因子(由電路之(蝕刻深度/上下之平均蝕刻寬度)表示之比)及電路之直線性,且按照以下之基準進行評價。若評價為○則良好。 In the copper foil portion of the above CCL sample, short strip-shaped circuits of L / S (line / gap) = 40/40 μm, 35/35 μm, 25/25 μm, 20/20 μm, and 15/15 μm were formed. For comparison, a circuit is formed in the same manner as a commercially available rolled copper foil (fine copper foil). Next, the etching factor (the ratio represented by the (etching depth / average etching width above and below) of the circuit) and the linearity of the circuit were visually determined using a microscope, and evaluated according to the following criteria. An evaluation of ○ is good.

○:與市售之軋製銅箔相比蝕刻因子及電路之直線性良好 ○: Compared with commercially available rolled copper foil, the etching factor and the linearity of the circuit are good.

△:與市售之軋製銅箔相比蝕刻因子及電路之直線性同等 △: Compared with commercially available rolled copper foil, the etching factor and the linearity of the circuit are the same

×:與市售之軋製銅箔相比蝕刻因子及電路之直線性較差 ×: Compared with commercially available rolled copper foil, the etching factor and the linearity of the circuit are poor.

將所得之結果示於表1。 The obtained results are shown in Table 1.

由表1清楚可知,於銅箔之平均結晶粒徑為0.5~4.0μm且拉伸強度為235~290MPa之各實施例之情形時,彎折性及蝕刻性優異。再者,實施例1係於最終冷軋之最後之1行程中進行聚合軋製。 As is clear from Table 1, in the case of each example in which the average crystal grain diameter of the copper foil is 0.5 to 4.0 μm and the tensile strength is 235 to 290 MPa, the bendability and etching properties are excellent. In addition, Example 1 performed polymerization rolling in the last stroke of the final cold rolling.

另一方面,於最終冷軋中之加工度η未達3.5之比較例1、4之情形時,銅箔之平均結晶粒徑超過4.0μm,且拉伸強度未達235MPa,從而銅箔及CCL之彎折性較差。再者,於比較例4之情形時,銅箔之平均結晶粒徑為稍大於4.0μm之4.5μm,故蝕刻性良好。 On the other hand, in the case of Comparative Examples 1 and 4 in which the degree of processing η in the final cold rolling did not reach 3.5, the average crystal grain size of the copper foil exceeded 4.0 μm, and the tensile strength did not reach 235 MPa. The bendability is poor. In addition, in the case of Comparative Example 4, since the average crystal grain size of the copper foil was 4.5 μm slightly larger than 4.0 μm, the etching property was good.

於添加元素之合計含量未達下限值之比較例3之情形時,由添加元素引起之再結晶粒之微細化並不充分,銅箔之平均結晶粒徑大幅超過4.0μm而粗大化,拉伸強度未達235MPa,從而銅箔及CCL之彎折性及蝕刻性較差。於添加元素之合計含量超過上限值之比較例2之情形時,導電率較差。 In the case of Comparative Example 3 where the total content of the added elements did not reach the lower limit, the recrystallization of the recrystallized grains due to the added elements was insufficient, and the average crystal grain size of the copper foil was significantly larger than 4.0 μm and coarsened. The tensile strength does not reach 235 MPa, so the bendability and etchability of copper foil and CCL are poor. When the total content of the added elements exceeds the upper limit of Comparative Example 2, the conductivity is poor.

於添加元素之合計含量超過上限值之比較例5之情形時,再結晶溫度變高且於300℃之熱處理中不會再結晶,導電率降低,並且拉伸強度超過290MPa而變高。因此,銅箔及CCL之彎折性大幅度變差。 In the case of Comparative Example 5 in which the total content of the added elements exceeds the upper limit value, the recrystallization temperature becomes high and recrystallization does not occur during the heat treatment at 300 ° C., the conductivity decreases, and the tensile strength becomes higher than 290 MPa. Therefore, the bendability of copper foil and CCL is greatly deteriorated.

Claims (9)

一種可撓性印刷基板用銅箔,其係由99.0質量%以上之Cu、剩餘部分為不可避免之雜質構成之銅箔,平均結晶粒徑為0.5~4.0μm,且拉伸強度為235~290MPa。A copper foil for a flexible printed circuit board. The copper foil is composed of 99.0% by mass or more of Cu and the remainder is unavoidable impurities. The average crystal grain size is 0.5 to 4.0 μm, and the tensile strength is 235 to 290 MPa. . 如申請專利範圍第1項之可撓性印刷基板用銅箔,其係由符合JIS-H3100(C1100)規格之精銅或JIS-H3100(C1011)之無氧銅構成。For example, the copper foil for flexible printed circuit boards in the scope of application for patent No. 1 is composed of fine copper in accordance with JIS-H3100 (C1100) or oxygen-free copper in JIS-H3100 (C1011). 如申請專利範圍第1或2項之可撓性印刷基板用銅箔,其進而含有合計為0.003~0.825質量%之選自P、Ti、Sn、Ni、Be、Zn、In及Mg之群中之1種以上之添加元素而成。For example, the copper foil for flexible printed circuit boards in the scope of patent application No. 1 or 2 further contains 0.003 to 0.825 mass% of a group selected from the group consisting of P, Ti, Sn, Ni, Be, Zn, In, and Mg. One or more kinds of added elements. 如申請專利範圍第1或2項之可撓性印刷基板用銅箔,其於300℃進行30分鐘熱處理後之該平均結晶粒徑為0.5~4.0μm,且該拉伸強度為235~290MPa。For example, the copper foil for a flexible printed circuit board in the first or second patent application range has an average crystal grain size of 0.5 to 4.0 μm after heat treatment at 300 ° C. for 30 minutes, and the tensile strength is 235 to 290 MPa. 如申請專利範圍第1或2項之可撓性印刷基板用銅箔,其中,將厚度25μm之聚醯亞胺樹脂膜積層於該銅箔之單面而成之覆銅積層體以彎曲半徑0.05mm且以該銅箔成為外側之方式進行180度密接彎曲,然後使彎折部恢復至0度,重複此試驗3次之後,以200倍觀察該銅箔時,未目視辨認到龜裂。For example, the copper foil for flexible printed circuit board of the scope of application patent No. 1 or 2, wherein a copper-clad laminated body formed by laminating a polyimide resin film with a thickness of 25 μm on one side of the copper foil with a bending radius of 0.05 The copper foil was bent at 180 degrees so that the copper foil became the outer side, and then the bent portion was returned to 0 degrees. After repeating this test 3 times, when the copper foil was observed at 200 times, no crack was visually recognized. 一種覆銅積層體,其係將申請專利範圍第1至5項中任一項之可撓性印刷基板用銅箔與樹脂層積層而成。A copper-clad laminate is formed by laminating a copper foil for a flexible printed circuit board and a resin in any one of claims 1 to 5. 一種可撓性印刷基板,其係使用申請專利範圍第6項之覆銅積層體,於該銅箔上形成電路而成。A flexible printed circuit board is formed by forming a circuit on the copper foil by using a copper-clad laminate in the sixth aspect of the patent application. 如申專利範圍第7項之可撓性印刷基板,其中,該電路之L/S為40/40~15/15(μm/μm)。For example, the flexible printed circuit board of the seventh scope of the patent application, wherein the L / S of the circuit is 40/40 ~ 15/15 (μm / μm). 一種電子機器,其使用有申請專利範圍第7或8項之可撓性印刷基板。An electronic device using a flexible printed circuit board with a scope of patent application No. 7 or 8.
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