TWI626520B - 電壓調整器 - Google Patents

電壓調整器 Download PDF

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TWI626520B
TWI626520B TW103119881A TW103119881A TWI626520B TW I626520 B TWI626520 B TW I626520B TW 103119881 A TW103119881 A TW 103119881A TW 103119881 A TW103119881 A TW 103119881A TW I626520 B TWI626520 B TW I626520B
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voltage
circuit
output
overshoot
gate
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TW201523187A (zh
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津崎敏之
黑蔵忠
藤村学
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日商艾普凌科有限公司
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/569—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
    • G05F1/573—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overcurrent detector
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/569—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
    • G05F1/571—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overvoltage detector
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

提供可以穩定地進行過衝之抑制的電壓調整 器。
構成具備檢測出非調整狀態之非調整檢 測電路，當非調整檢測電路檢測出非調整狀態時，過衝抑制電路進行動作。

Description

電壓調整器
本發明係關於輸出定電壓之電壓調整器，更詳細而言，有關抑制產生在輸出電壓Vout之過衝的技術。
電壓調整器係輸入鋰離子2次電池或電池等之高的電源電壓，對微電腦等之裝置輸出比電源電壓低的電壓。電壓調整器為了使微電腦等之裝置穩定動作，以在輸出電壓Vout不會產生過衝為佳。
圖3為表示以往之電壓調整器的電路圖。
以往之電壓調整器具備基準電壓電路101、差動放大電路102、輸出PMOS電晶體104、分壓電阻電路106、由差動放大電路108和PMOS電晶體109所構成之過衝抑制電路300。
差動放大電路102係在非反轉輸入端子連接分壓電阻電路106之輸出端子，在反轉輸入端子連接基準電壓電路101，輸出端子被連接於輸出PMOS電晶體104 之閘極。輸出PMOS電晶體104係源極連接於電源輸入端子10，汲極連接於輸出端子12。分壓電阻電路被連接於輸出端子12和接地端子11之間。
分壓電阻電路106係將輸出端子12之輸出電壓Vout予以分壓，輸出反饋電壓Vfb。基準電壓電路101係輸出基準電壓Vref。差動放大電路102係在非反轉輸入端子被輸入反饋電壓Vfb，在反轉輸入端子被輸入基準電壓Vref，從輸出端子輸出之電壓Vdrv被輸入至輸出PMOS電晶體104之閘極。依此，構成負反饋電路，輸出端子12之輸出電壓Vout被控制成設定電壓。
差動放大電路108係在非反轉輸入端子連接基準電壓電路101，在反轉輸入端子連接分壓電阻電路106之輸出端子，輸出端子被連接於PMOS電晶體109之閘極。PMOS電晶體109係源極連接於電源輸入端子10，汲極連接於輸出PMOS電晶體端子之閘極。
當輸出端子12之電壓高於應被控制之特定電壓時，即是當產生過衝時，反饋電壓Vfb高於基準電壓Vref。因差動放大電路108之輸出電壓變低，故PMOS電晶體109成為接通。依此，輸出PMOS電晶體之閘極電壓Vdrv因接近於電源輸入端子10之輸入電壓Vin，故輸出PMOS電晶體104被控制成斷開。因此，過衝抑制電路300可以抑制輸出電壓Vout之過衝。
[先行技術文獻] [專利文獻]
[專利文獻1]日本特開2005-301439號公報
電壓調整器因無法升壓，故於輸入電壓Vin低於輸出電壓Vout之設定電壓時，輸出電壓Vout變得較設定電壓低。此時，當基準電壓Vref輸出特定電壓時，因反饋電壓Vfb低於基準電壓Vref，故差動放大電路102之輸出電壓成為接地電壓Vss(0V)。輸出PMOS電晶體104因閘極電壓Vdrv成為0V故接通。將該狀態稱為非調整狀態。
在非調整狀態中，因輸出PMOS電晶體在非飽和區域成為接通，故輸出電壓Vout與輸入電壓Vin幾乎相等。在此，當輸入電壓Vin急遽上升時，輸出電壓Vout也同樣上升。當輸出電壓Vout超越設定電壓時，閘極電壓Vdrv必須高於以輸入電壓Vin為基準而下降至輸出PMOS電晶體104之臨界電壓Vth的電壓(Vdrv>Vin-Vth)。但是，因從0V上升至其電壓需要時間，故輸出電壓Vout超過設定電壓，產生過衝。因此，當輸入電壓Vin從非調整狀態急遽上升時，產生最大的過衝。
為了抑制過衝，必須快速地響應輸入電壓Vin之急遽上升而使閘極電壓Vdrv上升，過衝抑制電路300 進行該動作。
輸入電壓Vin高於輸出電壓Vout之設定電壓時，為調整狀態，輸出電壓Vout被控制成設定電壓，閘極電壓Vdrv成為以輸入電壓Vin為基準而下降至輸出PMOS電晶體104之臨界電壓Vth程度的電壓(Vdrv≒Vin-Vth)。在輸入電壓Vin從調整狀態急遽上升之情況下，閘極電壓Vdrv若從Vin-Vth以輸入電壓Vin為基準變化至Vth以上之電壓(Vdrv>Vin-Vth)即可，因可以藉由負反饋電路所進行的控制，故過衝小。
因此，在調整狀態下，當過衝防止電路300動作，使閘極電壓Vdrv上升至輸入電壓Vin，且使輸出PMOS電晶體104完全斷開時，相反地會有輸出電壓Vout引起下衝之課題。
以往之電壓調整器即使在調整狀態下，過衝防止電路300也發揮功能，若過於抑制過衝，相反地會有引起輸出端子12之電壓較設定電壓低的下衝之課題。
本發明之電壓調整器為了解決上述課題，構成具備檢測出非調整狀態之非調整檢測電路，當非調整檢測電路檢測出非調整狀態時，過衝抑制電路進行動作。
若藉由本發明之電壓調整器，因構成於非調 整狀態時，過衝抑制電路進行動作，故不會使輸出電壓下衝，可抑制過衝產生。
101、203、206‧‧‧基準電壓電路
102、108‧‧‧差動放大電路
106‧‧‧分壓電阻電路
200‧‧‧非調整檢測電路
202、205‧‧‧比較器
100、300‧‧‧過衝抑制電路
圖1為表示本實施型態之電壓調節器的電路圖。
圖2為本實施型態之電壓調整器之動作圖。
圖3為表示以往之電壓調節器的電路圖。
圖1為表示本實施型態之電壓調整器的電路圖。
本實施型態之電壓調整器具備基準電壓電路101、差動放大電路102、輸出PMOS電晶體104、分壓電阻電路106、過衝抑制電路100和非調整檢測電路200。過衝抑制電路100具備NAND電路107、差動放大電路108和PMOS電晶體109。非調整檢測電路200具備有比較器202、基準電壓電路203、比較器205、基準電壓電路206和OR電路208。
差動放大電路102係在非反轉輸入端子連接分壓電阻電路106之輸出端子，在反轉輸入端子連接基準電壓電路101，輸出端子被連接於輸出PMOS電晶體104之閘極。輸出PMOS電晶體104係源極連接於電源輸入端子10，汲極連接於輸出端子12。分壓電阻電路被連接於 輸出端子12和接地端子11之間。差動放大電路108係在非反轉輸入端子連接分壓電阻電路106之輸出端子，在反轉輸入端子連接基準電壓電路101，輸出端子被連接於NAND電路107之一方之輸入端子。NAND電路107之輸出端子被連接於PMOS電晶體109之閘極。PMOS電晶體109係源極連接於電源輸入端子10，汲極連接於輸出PMOS電晶體端子之閘極。比較器202係非反轉輸入端子連接基準電壓電路203，在反轉輸入端子連接差動放大電路102之輸出端子。比較器205係非反轉輸入端子連接基準電壓電路206，在反轉輸入端子連接差動放大電路102之輸出端子。OR電路208係在一方之輸入端子連接比較器202之輸出端子，在另一方之輸入端子連接比較器205之輸出端子，輸出端子被連接於NAND電路107之另一方之輸入端子。
分壓電阻電路106係將輸出端子12之輸出電壓Vout予以分壓，輸出反饋電壓Vfb。基準電壓電路101係輸出基準電壓Vref。差動放大電路102係在非反轉輸入端子被輸入反饋電壓Vfb，在反轉輸入端子被輸入基準電壓Vref，從輸出端子輸出之電壓Vdrv被輸入至輸出PMOS電晶體104之閘極。依此，構成負反饋電路，輸出端子12之輸出電壓Vout被控制成設定電壓。
差動放大電路108係在非反轉輸入端子被輸入反饋電壓Vfb，在反轉輸入端子被輸入基準電壓Vref，從輸出端子輸出之電壓經NAND電路107被輸入至輸出 PMOS電晶體109之閘極。過衝抑制電路100係差動放大電路108檢測出輸出端子之過衝，藉由PMOS電晶體109接通，抑制過衝。
比較器202係非反轉輸入端子被輸入基準電壓電路203所輸出之輸入電壓Vin基準之基準電壓V1，在反轉輸入端子被輸入PMOS電晶體104之閘極電壓Vdrv。因此，比較器202在電壓(Vin-V1)高於閘極電壓Vdrv之期間輸出High之檢測訊號Vdet1。比較器205係非反轉輸入端子被輸入基準電壓電路206所輸出之接地電壓Vss基準之基準電壓V2，在反轉輸入端子被輸入閘極電壓Vdrv。因此，比較器205在基準電壓V2高於閘極電壓Vdrv之期間輸出High之檢測訊號Vdet2。OR電路208被輸入比較器202所輸出之檢測訊號Vdet1和比較器205所輸出之檢測訊號Vdet2，輸出訊號Vdet被輸入NAND電路107。OR電路208係於檢測訊號Vdet1和檢測訊號Vdet2中之任一為High時，輸出High之檢測訊號Vdet。因此，NAND電路107係在檢測訊號Vdet為High之期間，即是非調整狀態之期間，藉由差動放大電路108檢測出輸出端子之過衝而予以輸出的High訊號，對PMOS電晶體109之閘極輸出Low之訊號。
圖2表示非調整檢測電路200之動作的動作圖。圖2之上方圖示表示使輸入電壓Vin上升時之閘極電壓Vdrv、電壓(Vin-V1)、基準電壓V2之關係。當輸入電壓Vin上升時，在時間T1，基準電壓V2成為特定之電 壓。接著，在時間T2，電壓(Vin-V1)上升。然後，在時間T3，閘極電壓Vdrv上升。
圖2之下方圖示表示比較器202之檢測電壓Vdet1和比較器205之檢測電壓Vdet2和OR電路208之輸出電壓Vdet。比較器202係於閘極電壓Vdrv為電壓(Vin-V1)以下之時(時間T0~T3)檢測出非調整，並輸出High之檢測訊號Vdet1。比較器205係於閘極電壓Vdrv為基準電壓V2以下之時(時間T2~T4)檢測出非調整，並輸出High之檢測訊號Vdet2。OR電路208係於檢測訊號Vdet1和檢測訊號Vdet2中之任一為High時，輸出High之檢測訊號Vdet。因此，可檢測出非調整狀態之全區域(時間T0~T4)。
如上述說明般，在非調整檢測電路200檢測出非調整狀態，而OR電路208輸出High之檢測訊號Vdet時，當差動放大電路108檢測出過衝，從過衝抑制電路100之NAND電路107被輸出PMOS電晶體109接通的訊號，抑制輸出端子12之過衝。因此，因在調整狀態下過衝抑制電路100不動作，故不會使輸出電壓下衝，可抑制過衝產生。

Claims (2)

  1. 一種電壓調整器，具備比較將輸出端子之輸出電壓予以分壓的反饋電壓和第一基準電壓，並控制輸出電晶體之第一差動放大電路，和抑制上述輸出電壓之過衝的過衝抑制電路，其特徵在於：該電壓調整器具備非調整檢測電路，且該非調整檢測電路具備：比較上述輸出電晶體之閘極電壓和第二基準電壓的第一比較器；比較上述輸出電晶體之閘極電壓和第三基準電壓的第二比較器；及將第一比較器和第二比較器之檢測訊號之邏輯和當作檢測訊號而予以輸出的第一邏輯電路，從上述輸出電晶體之閘極電壓檢測出非調整狀態，上述過衝抑制電路係針對上述非調整檢測電路檢測出非調整狀態，檢測出過衝時，抑制上述輸出電壓之過衝。
  2. 如請求項1所記載之電壓調整器，其中上述過衝抑制電路具備：檢測出上述輸出電壓之過衝的第二差動放大電路；輸出上述第二差動放大電路之檢測訊號和上述非調整檢測電路之檢測訊號的邏輯積的第二邏輯電路；及以上述第二邏輯電路之輸出訊號抑制上述輸出電晶體之閘極電壓的電晶體。
TW103119881A 2013-06-25 2014-06-09 電壓調整器 TWI626520B (zh)

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015225804A1 (de) * 2015-12-17 2017-06-22 Dialog Semiconductor (Uk) Limited Spannungsregler mit Impedanzkompensation
US11342852B2 (en) * 2017-06-23 2022-05-24 Intel Corporation Apparatus, system, and method for reducing voltage overshoot in voltage regulators
JP6986999B2 (ja) * 2018-03-15 2021-12-22 エイブリック株式会社 ボルテージレギュレータ
JP7065660B2 (ja) 2018-03-22 2022-05-12 エイブリック株式会社 ボルテージレギュレータ
CN109947163B (zh) 2018-09-04 2020-08-07 合肥鑫晟光电科技有限公司 数字稳压器及其稳压方法
IT201900003331A1 (it) * 2019-03-07 2020-09-07 St Microelectronics Srl Circuito regolatore di tensione e corrispondente procedimento
JP2021039596A (ja) 2019-09-04 2021-03-11 株式会社東芝 電源回路
KR20220131063A (ko) * 2021-03-19 2022-09-27 에스케이하이닉스 주식회사 저전압 강하 레귤레이터

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6608520B1 (en) * 2001-06-25 2003-08-19 Texas Instruments Incorporated Regulator circuit
US7173405B2 (en) * 2003-07-10 2007-02-06 Atmel Corporation Method and apparatus for current limitation in voltage regulators with improved circuitry for providing a control voltage
TW200941878A (en) * 2008-02-15 2009-10-01 Seiko Instr Inc Voltage regulator
US7885048B2 (en) * 2006-03-15 2011-02-08 Ricoh Company, Ltd. Semiconductor device and an electronic apparatus incorporating the semiconductor device
TW201229709A (en) * 2011-01-04 2012-07-16 Faraday Tech Corp Voltage regulator
TW201244314A (en) * 2011-01-28 2012-11-01 Seiko Instr Inc Voltage regulator

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051854A (ja) * 2003-07-30 2005-02-24 Mitsumi Electric Co Ltd 起動処理回路
JP2005301439A (ja) * 2004-04-07 2005-10-27 Ricoh Co Ltd ボルテージレギュレータ
JP4628176B2 (ja) 2004-06-14 2011-02-09 ローム株式会社 電源装置および電子機器
US9041369B2 (en) * 2012-08-24 2015-05-26 Sandisk Technologies Inc. Method and apparatus for optimizing linear regulator transient performance
JP6130112B2 (ja) * 2012-09-07 2017-05-17 エスアイアイ・セミコンダクタ株式会社 ボルテージレギュレータ
JP6168864B2 (ja) * 2012-09-07 2017-07-26 エスアイアイ・セミコンダクタ株式会社 ボルテージレギュレータ
JP6257323B2 (ja) * 2013-12-27 2018-01-10 エスアイアイ・セミコンダクタ株式会社 ボルテージレギュレータ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6608520B1 (en) * 2001-06-25 2003-08-19 Texas Instruments Incorporated Regulator circuit
US7173405B2 (en) * 2003-07-10 2007-02-06 Atmel Corporation Method and apparatus for current limitation in voltage regulators with improved circuitry for providing a control voltage
US7885048B2 (en) * 2006-03-15 2011-02-08 Ricoh Company, Ltd. Semiconductor device and an electronic apparatus incorporating the semiconductor device
TW200941878A (en) * 2008-02-15 2009-10-01 Seiko Instr Inc Voltage regulator
TW201229709A (en) * 2011-01-04 2012-07-16 Faraday Tech Corp Voltage regulator
TW201244314A (en) * 2011-01-28 2012-11-01 Seiko Instr Inc Voltage regulator

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WO2014208261A1 (ja) 2014-12-31
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JP6170354B2 (ja) 2017-07-26
US20160105113A1 (en) 2016-04-14

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