TWI625170B - 清洗設備 - Google Patents
清洗設備 Download PDFInfo
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Abstract
一種半導體製程用之清洗設備,係包含有用以裝載清洗液之液體供應源、用以過濾該清洗液之過濾器、用以將該清洗液噴灑於物件上之供應裝置、以及用以檢測經該過濾器過濾後之清洗液品質之第一感測器,以確保該供應裝置所噴灑之清洗液符合所需規範。
Description
本發明係有關一種半導體製程設備,尤指一種用於半導體製程之清洗設備。
隨著半導體封裝技術的演進,市場對電子產品演進為追求輕、薄、短、小之訴求,且電子元件不斷縮小尺寸,相對於半導體封裝技術亦隨之推陳出新,以符合市場上電子產品的需求。然而,半導體產品的性能將影響最終電子商品功能的關鍵,所以半導體製程中的每個階段都有層層測試及檢驗,以為最終的電子產品之品質進行把關。
如第1圖所示,習知覆晶製程係先將一半導體晶片91藉由複數銲錫凸塊92設於一封裝基板90上,並於該銲錫凸塊92上沾附助焊劑以回銲(reflow)該些銲錫凸塊92,再以清洗機1藉由皂化劑及清水噴洗(如箭頭方向f)沖刷沾附於該半導體晶片91或封裝基板90上的助焊劑。之後,將底膠93填入該半導體晶片91與該封裝基板90之間以包覆該些銲錫凸塊92,而製成一半導體封裝件9,並藉由該底膠93之設計以避免該些銲錫凸塊92遭受汙損及損毀。
惟,習知覆晶製程中,並無法判斷清洗機所用之清水的水質,故往往於清洗該半導體晶片91或封裝基板90上的助焊劑時,該清水中之雜質會殘留於該半導體晶片91或封裝基板90上,因而影響產品的品質,導致產量損失。
因此,如何克服習知技術中之問題,實已成目前亟欲解決的課題。
鑑於上述習知技術之缺失,本發明係揭露一種清洗設備,係用於半導體製程,包括:液體供應源,係用以裝載清洗液;過濾器,係藉由第一管路連通該液體供應源,以過濾由該液體供應源饋入該過濾器之清洗液;供應裝置,係藉由第二管路連通該過濾器,以將該經過濾之清洗液噴灑於物件上;以及第一感測器,係對應該第二管路作配置,以檢測該經過濾之清洗液之品質。
前述之清洗設備中,該第一感測器係為電極板。
前述之清洗設備中,復包括對應該液體供應源作配置且連通該第一管路之驅動裝置。
前述之清洗設備中,復包括用以承載該物件之承載座。又可包括用以偵測清洗後之該物件之表面潔淨度之偵測裝置。
前述之清洗設備中,復包括用以檢測流經該物件之清洗液之品質之第二感測器。例如,該第二感測器係為電極板。
前述之清洗設備中,復包括對應該供應裝置作配置之
回收裝置。較佳地,該回收裝置係連通該液體供應源。
前述之清洗設備中,復包括資料處理裝置,係用以接收該第一感測裝置所檢測該清洗液之數據資料,以判定該數據資料是否超過設定值。
由上可知,本發明之清洗設備主要藉由該第一感測器對應該第二管路作配置,以檢測該過濾器過濾後之液體之潔淨度,而得以確保該供應裝置所噴灑之液體符合所需規範,故相較於習知技術,本發明之清洗設備能避免該液體中之雜質殘留於該物件上而影響產品品質之問題,因而能避免產量損失之問題。
1‧‧‧清洗機
2‧‧‧清洗設備
20‧‧‧液體供應源
21‧‧‧第一感測器
22‧‧‧第二感測器
23‧‧‧過濾器
24‧‧‧供應裝置
25‧‧‧驅動裝置
26‧‧‧承載座
27‧‧‧回收裝置
28‧‧‧資料處理裝置
29‧‧‧顯示器
30‧‧‧偵測裝置
31‧‧‧第一管路
32‧‧‧第二管路
33‧‧‧第三管路
8‧‧‧物件
9‧‧‧半導體封裝件
90‧‧‧封裝基板
91‧‧‧半導體晶片
92‧‧‧銲錫凸塊
93‧‧‧底膠
A,B,F,f‧‧‧箭頭方向
S‧‧‧液體
第1圖係為習知覆晶製程的剖視示意圖;以及第2圖係為本發明之清洗設備於使用時之示意圖。
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如
「上」、及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。
如第2圖所示,本發明之半導體製程用之清洗設備2係包括:一液體供應源20、一過濾器23、一供應裝置24以及一第一感測器21。於本實施例中,該清洗設備2係僅於圖中表示各部件之相對位置,並未顯示各部件之詳細機構及其它相關之機電配備。
所述之半導體製程係例如為覆晶製程,但於其它實施例中,亦可為打線製程或其它需清洗之製程。
所述之液體供應源20係包含一容器,其於使用該清洗設備2時填裝有液體S(如用以清洗物件8之清洗液)。
於本實施例中,該物件8係為電子封裝件,且該清洗液係為皂化劑及清水。例如,該物件8係為覆晶型半導體封裝件(可參考第1圖所示之半導體封裝件9),其包括一承載件、一設於該承載件上之電子元件、及複數結合於該電子元件與該承載件之間的銲錫凸塊。具體地,該承載件係為導線架、封裝基板、半導體板材(如玻璃、矽晶圓或矽中介板)等,但不限於上述,且該電子元件係為主動元件、被動元件或其二者組合,其中,該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感,並無特別限制。
再者,該清洗設備2復包括用以承載該物件8之承載
座26,係對應該供應裝置24作配置,以令該供應裝置24將該液體S供應至設於該承載座26上之物件8。
所述之過濾器23係藉由第一管路31連通該液體供應源20,以令該液體S流經該過濾器23。
於本實施例中,該清洗設備2復包括一驅動裝置25,係對應該液體供應源20作配置且連通該第一管路31,以將該液體供應源20中之液體S沿該第一管路31輸送至該過濾器23。具體地,該驅動裝置25係為馬達,但並不限於此。
所述之供應裝置24係藉由第二管路32連通該過濾器23,以令該液體S流經該供應裝置24。
於本實施例中,該供應裝置24係包含有噴嘴及其它相關配置,其為業界所熟知,故於此不再贅述。
所述之第一感測器21係對應該第二管路32作配置,以檢測該第二管路32中之該液體S之品質。
於本實施例中,該第一感測器21係為一電極板,其用於偵測該液體S之導電度,以得知該液體S之潔淨度。例如,該清洗設備2包含有一資料處理裝置28(如電腦),並內建第一設定值(如100uA),以當該第一感測器21獲取第一感測電流值時,該資料處理裝置28會接收該第一感測電流值之資料進行比對,以判定該第一感測電流值是否超過該第一設定值,亦即該第一設定值係為用於判定經過該過濾器23的液體S是否需更換之標準值。
再者,該清洗設備2復可包括有一顯示器29(如螢
幕),以顯示該第一感測器21之第一感測電流值。
又,該清洗設備2亦可包括一偵測裝置30,係對應該承載座26作配置,以偵測清洗後的物件8的表面潔淨度,若該物件8於偵測後之表面潔淨度不符合規範,則該清洗設備2之警示裝置(圖略),例如燈光、影像(如LCD、LED)、聲音或其組合等,會警示使用者需重新清洗或更換該液體S。具體地,該偵測裝置30可包含感光耦合元件(Charge-coupled Device,簡稱CCD),且能移動至該承載座26四周(如圖中之箭頭方向A),以利於擷取該物件8表面之相關資訊。
於使用該清洗設備2時,係藉由該驅動裝置25將該液體供應源20中之液體S(清洗液)輸送至該供應裝置24,再由該供應裝置24將該液體S(清洗液)噴灑至該承載座26(如圖中之箭頭方向F)以清洗該物件8。特別地,於輸送該液體S之過程中係經由該過濾器23除去該液體S中之雜質(例如,來自該第一管路31之壁面之脫落物),以淨化該液體S,再藉由該第一感測器21量測該過濾後之液體S(即該第二管路32中)之潔淨度,以確保該供應裝置24所噴灑之液體S(清洗液)符合所需規範。
再者,該清洗設備2可包括一第二感測器22,係對應該供應裝置24作配置,以檢測流經該承載座26與物件8之液體S之品質,藉以判斷清洗後的液體品質是否過髒。例如,當該供應裝置24的液體不乾淨而造成該物件8未清洗乾淨時,該第二感測器22所檢測之清洗後的液體S會特
別髒。具體地,該第二感測器22例如為一電極板,其用於偵測該液體S清洗物件後之導電度,以得知該液體S之潔淨度。於另一實施例中,當液體S經過第一感測器21時所感測的第一感測電流值符合規範,但該液體S流經過物件8後再流經第二感測器22時所感測的第二感測電流值超出規範,此情況代表前站的清洗液過髒造成物件8沒有洗乾淨,導致清洗後的清洗液較髒,此時須確認前站的清洗液是否須更換。
因此,該資料處理裝置28可內建第二設定值(如250uA),故當該第二感測器22獲取第二感測電流值時,該資料處理裝置28會接收該第二感測電流值之資料進行比對,以判定該第二感測電流值是否超過該第二設定值,亦即該第二設定值係為用於判定該液體供應源20之液體S是否需更換(或表示該清洗設備2之液體路徑之相關構件是否需更換)之標準值。
又,該清洗設備2亦可包括一回收裝置27,係對應該供應裝置24作配置,以回收流經該承載座26與物件8之液體S(如圖中之箭頭方向B)。例如,該回收裝置27可將回收之液體S應用於所需之處,或者,該回收裝置27可藉由第三管路33連通該液體供應源20,以再利用液體S。
另外,該回收裝置27亦可對應該第二感測器22作配置(例如,該第二感測器22可設於該第三管路33上),以藉由該第二感測器22檢測該回收裝置27所回收之液體S之潔淨度是否符合上述需求,再考量是否再利用該液體S。
綜上所述,本發明之清洗設備2係於連通該過濾器23與該供應裝置24之第二管路32上設置該第一感測器21,以檢測該過濾器23過濾後之液體S(即該第二管路32中)之潔淨度,而得以確保該供應裝置24所噴灑之液體S符合所需規範,故相較於習知技術,本發明之清洗設備2能避免該液體S中之雜質殘留於該物件8上而影響產品品質之問題,因而能避免產量損失之問題。
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。
Claims (10)
- 一種清洗設備,係應用於半導體製程,包括:液體供應源,係用以裝載清洗液;過濾器,係藉由第一管路連通該液體供應源,以過濾由該液體供應源饋入該過濾器之清洗液;供應裝置,係藉由第二管路連通該過濾器,以將該經過濾之清洗液噴灑於物件上;以及第一感測器,係對應該第二管路作配置,以檢測該經過濾之清洗液之品質。
- 如申請專利範圍第1項所述之清洗設備,其中,該第一感測器係為電極板。
- 如申請專利範圍第1項所述之清洗設備,復包括對應該液體供應源作配置且連通該第一管路之驅動裝置。
- 如申請專利範圍第1項所述之清洗設備,復包括用以承載該物件之承載座。
- 如申請專利範圍第1項所述之清洗設備,復包括用以偵測清洗後之該物件之表面潔淨度之偵測裝置。
- 如申請專利範圍第1項所述之清洗設備,復包括用以檢測流經該物件之清洗液之品質之第二感測器。
- 如申請專利範圍第6項所述之清洗設備,其中,該第二感測器係為電極板。
- 如申請專利範圍第1項所述之清洗設備,復包括資料處理裝置,係用以接收該第一感測裝置所檢測該清洗液之數據資料,以判定該數據資料是否超過設定值。
- 如申請專利範圍第1項所述之清洗設備,復包括用以回收該清洗液之回收裝置。
- 如申請專利範圍第9項所述之清洗設備,其中,該回收裝置係連通該液體供應源。
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