TWI624856B - 用於離子裝置的磁鐵以及離子裝置 - Google Patents

用於離子裝置的磁鐵以及離子裝置 Download PDF

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Publication number
TWI624856B
TWI624856B TW103120424A TW103120424A TWI624856B TW I624856 B TWI624856 B TW I624856B TW 103120424 A TW103120424 A TW 103120424A TW 103120424 A TW103120424 A TW 103120424A TW I624856 B TWI624856 B TW I624856B
Authority
TW
Taiwan
Prior art keywords
coolant fluid
magnet
annular
diameter
ion
Prior art date
Application number
TW103120424A
Other languages
English (en)
Chinese (zh)
Other versions
TW201506979A (zh
Inventor
斯卡特 巴洛克拉夫
詹姆士Ｓ 貝福
Original Assignee
瓦里安半導體設備公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瓦里安半導體設備公司 filed Critical 瓦里安半導體設備公司
Publication of TW201506979A publication Critical patent/TW201506979A/zh
Application granted granted Critical
Publication of TWI624856B publication Critical patent/TWI624856B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/20—Electromagnets; Actuators including electromagnets without armatures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1475—Scanning means magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/08—Cooling; Ventilating
    • H01F27/10—Liquid cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H01J2237/1526—For X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/303—Electron or ion optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Hall/Mr Elements (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
TW103120424A 2013-06-14 2014-06-13 用於離子裝置的磁鐵以及離子裝置 TWI624856B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361835089P 2013-06-14 2013-06-14
US61/835,089 2013-06-14
US13/966,611 2013-08-14
US13/966,611 US9177708B2 (en) 2013-06-14 2013-08-14 Annular cooling fluid passage for magnets

Publications (2)

Publication Number Publication Date
TW201506979A TW201506979A (zh) 2015-02-16
TWI624856B true TWI624856B (zh) 2018-05-21

Family

ID=52018423

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103120424A TWI624856B (zh) 2013-06-14 2014-06-13 用於離子裝置的磁鐵以及離子裝置

Country Status (6)

Country Link
US (2) US9177708B2 (enExample)
JP (1) JP6429407B2 (enExample)
KR (1) KR102161231B1 (enExample)
CN (1) CN105283975B (enExample)
TW (1) TWI624856B (enExample)
WO (1) WO2014201363A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9177708B2 (en) * 2013-06-14 2015-11-03 Varian Semiconductor Equipment Associates, Inc. Annular cooling fluid passage for magnets
US10486232B2 (en) 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
AU2018365942B2 (en) 2017-11-07 2021-04-08 Gallium Enterprises Pty Ltd Buried activated p-(Al,In)GaN layers
CN110300487A (zh) * 2019-07-12 2019-10-01 兰州科近泰基新技术有限责任公司 一种多通道冷却真空四极磁铁装置
US10971327B1 (en) * 2019-12-06 2021-04-06 Applied Materials, Inc. Cryogenic heat transfer system
CN111601449B (zh) * 2020-05-28 2023-01-10 兰州科近泰基新技术有限责任公司 真空内超大型四极透镜的制造方法
US12100541B2 (en) * 2020-09-14 2024-09-24 Intel Corporation Embedded cooling channel in magnetics
JP7901498B2 (ja) * 2022-09-26 2026-08-06 株式会社ダイヘン 高電圧電気部品

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW367518B (en) * 1995-10-19 1999-08-21 Axcelis Tech Inc Method and apparatus for ion beam formation in an ion implanter
CN1979749A (zh) * 2005-12-05 2007-06-13 北京中科信电子装备有限公司 均匀磁场平行束透镜系统
US20070176123A1 (en) * 2006-01-31 2007-08-02 Axcelis Technologies, Inc. Ion implanter having a superconducting magnet
TW200924012A (en) * 2007-09-27 2009-06-01 Varian Semiconductor Equipment Single wafer implanter for silicon-on-insulator wafer fabrication
US20090206210A1 (en) * 2007-08-03 2009-08-20 Shijun Qiao Baling bracket
CN201796681U (zh) * 2010-03-02 2011-04-13 Abb公司 电子装置的线圈结构

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB167916A (en) * 1920-06-12 1921-08-25 Giulio Schroeder Improvements in electrical transformers
JPS56108216U (enExample) * 1980-01-21 1981-08-22
US4883968A (en) 1988-06-03 1989-11-28 Eaton Corporation Electron cyclotron resonance ion source
JP3231342B2 (ja) * 1991-01-30 2001-11-19 株式会社日立製作所 電磁コイル
JPH04323811A (ja) * 1991-04-23 1992-11-13 Toshiba Corp ギャップ付鉄心形ガス絶縁リアクトル
JPH05190345A (ja) * 1992-01-17 1993-07-30 Toshiba Corp ギャップ付鉄心形リアクトル
JPH0864426A (ja) * 1994-08-19 1996-03-08 Toshiba Corp 静止誘導電気機器
CA2313688A1 (en) * 1997-12-09 1999-06-17 Imi Cornelius (Uk) Limited Valve
US6053241A (en) * 1998-09-17 2000-04-25 Nikon Corporation Cooling method and apparatus for charged particle lenses and deflectors
JP3979823B2 (ja) * 2001-07-31 2007-09-19 ギガフォトン株式会社 巻線機器および巻線機器を用いた高電圧パルス発生装置並びに高電圧パルス発生装置を備えた放電励起ガスレーザ装置
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
JP3767820B2 (ja) * 2003-01-22 2006-04-19 第一高周波工業株式会社 磁束照射装置
GB2397691B (en) * 2003-01-24 2005-08-10 Leica Microsys Lithography Ltd Cooling of a device for influencing an electron beam
CN100555483C (zh) * 2003-06-26 2009-10-28 伊顿动力品质公司 混合空芯/磁芯电感器
US7342236B2 (en) 2004-02-23 2008-03-11 Veeco Instruments, Inc. Fluid-cooled ion source
JP5154152B2 (ja) 2007-07-04 2013-02-27 ルネサスエレクトロニクス株式会社 昇圧電源回路
JP4363479B2 (ja) * 2007-11-09 2009-11-11 トヨタ自動車株式会社 回転電機および駆動装置
US7908736B2 (en) 2007-11-21 2011-03-22 Black & Decker Inc. Method of making an armature
JP2009164326A (ja) * 2008-01-07 2009-07-23 Fuji Electric Systems Co Ltd 磁気コア
US8022582B2 (en) 2008-12-30 2011-09-20 Caterpillar Inc. Liquid cooled permanent magnet rotor
EP2209128B1 (en) * 2009-01-20 2015-03-04 ABB Research Ltd. Gapped magnet core
JP2010258244A (ja) * 2009-04-27 2010-11-11 Toyota Industries Corp 誘導機器
EP2251875A1 (de) * 2009-05-16 2010-11-17 ABB Technology AG Transformatorkern
CN201820573U (zh) * 2010-04-26 2011-05-04 廊坊英博电气有限公司 带有冷却风道的谐波滤波电抗器
US20120023969A1 (en) * 2010-07-28 2012-02-02 General Electric Company Cooling system of an electromagnet assembly
EP2622221A1 (en) * 2010-10-01 2013-08-07 Franklin Electric Company Inc. Solenoid pump
JP5854550B2 (ja) * 2011-06-09 2016-02-09 トクデン株式会社 静止誘導機器、金属管誘導加熱装置及びインボリュート鉄心冷却構造
CN103714948A (zh) * 2012-10-08 2014-04-09 佛山市国电电器有限公司 一种水冷变压器铁芯冷却方法
US9524820B2 (en) * 2012-11-13 2016-12-20 Raytheon Company Apparatus and method for thermal management of magnetic devices
US9177708B2 (en) * 2013-06-14 2015-11-03 Varian Semiconductor Equipment Associates, Inc. Annular cooling fluid passage for magnets

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW367518B (en) * 1995-10-19 1999-08-21 Axcelis Tech Inc Method and apparatus for ion beam formation in an ion implanter
CN1979749A (zh) * 2005-12-05 2007-06-13 北京中科信电子装备有限公司 均匀磁场平行束透镜系统
US20070176123A1 (en) * 2006-01-31 2007-08-02 Axcelis Technologies, Inc. Ion implanter having a superconducting magnet
US20090206210A1 (en) * 2007-08-03 2009-08-20 Shijun Qiao Baling bracket
TW200924012A (en) * 2007-09-27 2009-06-01 Varian Semiconductor Equipment Single wafer implanter for silicon-on-insulator wafer fabrication
CN201796681U (zh) * 2010-03-02 2011-04-13 Abb公司 电子装置的线圈结构

Also Published As

Publication number Publication date
KR102161231B1 (ko) 2020-10-05
US9852882B2 (en) 2017-12-26
CN105283975A (zh) 2016-01-27
US20140367583A1 (en) 2014-12-18
KR20160021204A (ko) 2016-02-24
TW201506979A (zh) 2015-02-16
WO2014201363A1 (en) 2014-12-18
JP2016521913A (ja) 2016-07-25
JP6429407B2 (ja) 2018-11-28
US20160027610A1 (en) 2016-01-28
CN105283975B (zh) 2018-05-04
US9177708B2 (en) 2015-11-03

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