KR102161231B1 - 이온 장치와 함께 사용하기 위한 자석 및 이온 장치 - Google Patents

이온 장치와 함께 사용하기 위한 자석 및 이온 장치 Download PDF

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Publication number
KR102161231B1
KR102161231B1 KR1020167000777A KR20167000777A KR102161231B1 KR 102161231 B1 KR102161231 B1 KR 102161231B1 KR 1020167000777 A KR1020167000777 A KR 1020167000777A KR 20167000777 A KR20167000777 A KR 20167000777A KR 102161231 B1 KR102161231 B1 KR 102161231B1
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South Korea
Prior art keywords
coolant fluid
magnet
annular
core element
diameter
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English (en)
Korean (ko)
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KR20160021204A (ko
Inventor
스캇 배러클러프
제임스 에스. 버프
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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Publication of KR20160021204A publication Critical patent/KR20160021204A/ko
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3007Electron or ion-optical systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00Magnets
    • H01F7/06Electromagnets; Actuators including electromagnets
    • H01F7/20Electromagnets; Actuators including electromagnets without armatures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472Deflecting along given lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472Deflecting along given lines
    • H01J37/1474Scanning means
    • H01J37/1475Scanning means magnetic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/20Modifications to facilitate cooling, ventilating, or heating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/08Cooling; Ventilating
    • H01F27/10Liquid cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002Cooling arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • H01J2237/152Magnetic means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • H01J2237/152Magnetic means
    • H01J2237/1526For X-Y scanning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/303Electron or ion optical systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/31701Ion implantation

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Hall/Mr Elements (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
KR1020167000777A 2013-06-14 2014-06-13 이온 장치와 함께 사용하기 위한 자석 및 이온 장치 Active KR102161231B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361835089P 2013-06-14 2013-06-14
US61/835,089 2013-06-14
US13/966,611 US9177708B2 (en) 2013-06-14 2013-08-14 Annular cooling fluid passage for magnets
US13/966,611 2013-08-14
PCT/US2014/042321 WO2014201363A1 (en) 2013-06-14 2014-06-13 Annular cooling fluid passage for magnets

Publications (2)

Publication Number Publication Date
KR20160021204A KR20160021204A (ko) 2016-02-24
KR102161231B1 true KR102161231B1 (ko) 2020-10-05

Family

ID=52018423

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167000777A Active KR102161231B1 (ko) 2013-06-14 2014-06-13 이온 장치와 함께 사용하기 위한 자석 및 이온 장치

Country Status (6)

Country Link
US (2) US9177708B2 (enExample)
JP (1) JP6429407B2 (enExample)
KR (1) KR102161231B1 (enExample)
CN (1) CN105283975B (enExample)
TW (1) TWI624856B (enExample)
WO (1) WO2014201363A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9177708B2 (en) * 2013-06-14 2015-11-03 Varian Semiconductor Equipment Associates, Inc. Annular cooling fluid passage for magnets
US10486232B2 (en) * 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
EP3707756B1 (en) 2017-11-07 2022-08-24 Gallium Enterprises Pty Ltd Buried activated p-(al,in)gan layers
CN110300487A (zh) * 2019-07-12 2019-10-01 兰州科近泰基新技术有限责任公司 一种多通道冷却真空四极磁铁装置
US10971327B1 (en) * 2019-12-06 2021-04-06 Applied Materials, Inc. Cryogenic heat transfer system
CN111601449B (zh) * 2020-05-28 2023-01-10 兰州科近泰基新技术有限责任公司 真空内超大型四极透镜的制造方法
US12100541B2 (en) * 2020-09-14 2024-09-24 Intel Corporation Embedded cooling channel in magnetics

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005533353A (ja) * 2002-07-17 2005-11-04 バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド 注入装置のリボン形状イオンビームの特性制御
JP2009164326A (ja) * 2008-01-07 2009-07-23 Fuji Electric Systems Co Ltd 磁気コア
US20100237725A1 (en) * 2007-11-09 2010-09-23 Kazutaka Tatematsu Rotating electric machine and drive device

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB167916A (en) * 1920-06-12 1921-08-25 Giulio Schroeder Improvements in electrical transformers
JPS56108216U (enExample) * 1980-01-21 1981-08-22
US4883968A (en) 1988-06-03 1989-11-28 Eaton Corporation Electron cyclotron resonance ion source
JP3231342B2 (ja) * 1991-01-30 2001-11-19 株式会社日立製作所 電磁コイル
JPH04323811A (ja) * 1991-04-23 1992-11-13 Toshiba Corp ギャップ付鉄心形ガス絶縁リアクトル
JPH05190345A (ja) * 1992-01-17 1993-07-30 Toshiba Corp ギャップ付鉄心形リアクトル
JPH0864426A (ja) * 1994-08-19 1996-03-08 Toshiba Corp 静止誘導電気機器
US5554857A (en) * 1995-10-19 1996-09-10 Eaton Corporation Method and apparatus for ion beam formation in an ion implanter
WO1999029619A1 (en) * 1997-12-09 1999-06-17 Imi Cornelius (Uk) Limited Valve
US6053241A (en) * 1998-09-17 2000-04-25 Nikon Corporation Cooling method and apparatus for charged particle lenses and deflectors
JP3979823B2 (ja) * 2001-07-31 2007-09-19 ギガフォトン株式会社 巻線機器および巻線機器を用いた高電圧パルス発生装置並びに高電圧パルス発生装置を備えた放電励起ガスレーザ装置
JP3767820B2 (ja) * 2003-01-22 2006-04-19 第一高周波工業株式会社 磁束照射装置
GB2397691B (en) * 2003-01-24 2005-08-10 Leica Microsys Lithography Ltd Cooling of a device for influencing an electron beam
CN100555483C (zh) * 2003-06-26 2009-10-28 伊顿动力品质公司 混合空芯/磁芯电感器
US7342236B2 (en) 2004-02-23 2008-03-11 Veeco Instruments, Inc. Fluid-cooled ion source
CN1979749B (zh) * 2005-12-05 2011-10-19 北京中科信电子装备有限公司 均匀磁场平行束透镜系统
US20070176123A1 (en) * 2006-01-31 2007-08-02 Axcelis Technologies, Inc. Ion implanter having a superconducting magnet
JP5154152B2 (ja) 2007-07-04 2013-02-27 ルネサスエレクトロニクス株式会社 昇圧電源回路
CN201077592Y (zh) * 2007-08-03 2008-06-25 乔士军 打包支架
US20090084988A1 (en) * 2007-09-27 2009-04-02 Varian Semiconductor Equipment Associates, Inc. Single wafer implanter for silicon-on-insulator wafer fabrication
US7908736B2 (en) 2007-11-21 2011-03-22 Black & Decker Inc. Method of making an armature
US8022582B2 (en) 2008-12-30 2011-09-20 Caterpillar Inc. Liquid cooled permanent magnet rotor
EP2209128B1 (en) * 2009-01-20 2015-03-04 ABB Research Ltd. Gapped magnet core
JP2010258244A (ja) * 2009-04-27 2010-11-11 Toyota Industries Corp 誘導機器
EP2251875A1 (de) * 2009-05-16 2010-11-17 ABB Technology AG Transformatorkern
FI8758U1 (fi) * 2010-03-02 2010-06-10 Abb Oy Elektroniikkalaitteen käämirakenne
CN201820573U (zh) * 2010-04-26 2011-05-04 廊坊英博电气有限公司 带有冷却风道的谐波滤波电抗器
US20120023969A1 (en) * 2010-07-28 2012-02-02 General Electric Company Cooling system of an electromagnet assembly
WO2012044445A1 (en) * 2010-10-01 2012-04-05 Franklin Electric Company, Inc. Solenoid pump
JP5854550B2 (ja) * 2011-06-09 2016-02-09 トクデン株式会社 静止誘導機器、金属管誘導加熱装置及びインボリュート鉄心冷却構造
CN103714948A (zh) * 2012-10-08 2014-04-09 佛山市国电电器有限公司 一种水冷变压器铁芯冷却方法
US9524820B2 (en) * 2012-11-13 2016-12-20 Raytheon Company Apparatus and method for thermal management of magnetic devices
US9177708B2 (en) * 2013-06-14 2015-11-03 Varian Semiconductor Equipment Associates, Inc. Annular cooling fluid passage for magnets

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005533353A (ja) * 2002-07-17 2005-11-04 バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド 注入装置のリボン形状イオンビームの特性制御
US20100237725A1 (en) * 2007-11-09 2010-09-23 Kazutaka Tatematsu Rotating electric machine and drive device
JP2009164326A (ja) * 2008-01-07 2009-07-23 Fuji Electric Systems Co Ltd 磁気コア

Also Published As

Publication number Publication date
US9177708B2 (en) 2015-11-03
TW201506979A (zh) 2015-02-16
CN105283975B (zh) 2018-05-04
JP2016521913A (ja) 2016-07-25
US9852882B2 (en) 2017-12-26
US20160027610A1 (en) 2016-01-28
KR20160021204A (ko) 2016-02-24
TWI624856B (zh) 2018-05-21
US20140367583A1 (en) 2014-12-18
CN105283975A (zh) 2016-01-27
JP6429407B2 (ja) 2018-11-28
WO2014201363A1 (en) 2014-12-18

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