JP6429407B2 - イオン装置で利用する磁石およびイオン装置 - Google Patents

イオン装置で利用する磁石およびイオン装置 Download PDF

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Publication number
JP6429407B2
JP6429407B2 JP2016519682A JP2016519682A JP6429407B2 JP 6429407 B2 JP6429407 B2 JP 6429407B2 JP 2016519682 A JP2016519682 A JP 2016519682A JP 2016519682 A JP2016519682 A JP 2016519682A JP 6429407 B2 JP6429407 B2 JP 6429407B2
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Prior art keywords
fluid coolant
magnet
annular
core portion
opening
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JP2016519682A
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Japanese (ja)
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JP2016521913A (ja
JP2016521913A5 (enExample
Inventor
バラクロウ、スコット
エス． バフ、ジェームス
エス． バフ、ジェームス
Original Assignee
バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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Publication of JP2016521913A5 publication Critical patent/JP2016521913A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/20—Electromagnets; Actuators including electromagnets without armatures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1475—Scanning means magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/08—Cooling; Ventilating
    • H01F27/10—Liquid cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H01J2237/1526—For X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/303—Electron or ion optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Hall/Mr Elements (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
JP2016519682A 2013-06-14 2014-06-13 イオン装置で利用する磁石およびイオン装置 Active JP6429407B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361835089P 2013-06-14 2013-06-14
US61/835,089 2013-06-14
US13/966,611 US9177708B2 (en) 2013-06-14 2013-08-14 Annular cooling fluid passage for magnets
US13/966,611 2013-08-14
PCT/US2014/042321 WO2014201363A1 (en) 2013-06-14 2014-06-13 Annular cooling fluid passage for magnets

Publications (3)

Publication Number Publication Date
JP2016521913A JP2016521913A (ja) 2016-07-25
JP2016521913A5 JP2016521913A5 (enExample) 2017-04-27
JP6429407B2 true JP6429407B2 (ja) 2018-11-28

Family

ID=52018423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016519682A Active JP6429407B2 (ja) 2013-06-14 2014-06-13 イオン装置で利用する磁石およびイオン装置

Country Status (6)

Country Link
US (2) US9177708B2 (enExample)
JP (1) JP6429407B2 (enExample)
KR (1) KR102161231B1 (enExample)
CN (1) CN105283975B (enExample)
TW (1) TWI624856B (enExample)
WO (1) WO2014201363A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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US9177708B2 (en) * 2013-06-14 2015-11-03 Varian Semiconductor Equipment Associates, Inc. Annular cooling fluid passage for magnets
US10486232B2 (en) * 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
EP3707756B1 (en) 2017-11-07 2022-08-24 Gallium Enterprises Pty Ltd Buried activated p-(al,in)gan layers
CN110300487A (zh) * 2019-07-12 2019-10-01 兰州科近泰基新技术有限责任公司 一种多通道冷却真空四极磁铁装置
US10971327B1 (en) * 2019-12-06 2021-04-06 Applied Materials, Inc. Cryogenic heat transfer system
CN111601449B (zh) * 2020-05-28 2023-01-10 兰州科近泰基新技术有限责任公司 真空内超大型四极透镜的制造方法
US12100541B2 (en) * 2020-09-14 2024-09-24 Intel Corporation Embedded cooling channel in magnetics

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JPS56108216U (enExample) * 1980-01-21 1981-08-22
US4883968A (en) 1988-06-03 1989-11-28 Eaton Corporation Electron cyclotron resonance ion source
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JPH04323811A (ja) * 1991-04-23 1992-11-13 Toshiba Corp ギャップ付鉄心形ガス絶縁リアクトル
JPH05190345A (ja) * 1992-01-17 1993-07-30 Toshiba Corp ギャップ付鉄心形リアクトル
JPH0864426A (ja) * 1994-08-19 1996-03-08 Toshiba Corp 静止誘導電気機器
US5554857A (en) * 1995-10-19 1996-09-10 Eaton Corporation Method and apparatus for ion beam formation in an ion implanter
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JP3979823B2 (ja) * 2001-07-31 2007-09-19 ギガフォトン株式会社 巻線機器および巻線機器を用いた高電圧パルス発生装置並びに高電圧パルス発生装置を備えた放電励起ガスレーザ装置
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
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Also Published As

Publication number Publication date
US9177708B2 (en) 2015-11-03
TWI624856B (zh) 2018-05-21
KR20160021204A (ko) 2016-02-24
CN105283975B (zh) 2018-05-04
JP2016521913A (ja) 2016-07-25
KR102161231B1 (ko) 2020-10-05
US20140367583A1 (en) 2014-12-18
CN105283975A (zh) 2016-01-27
TW201506979A (zh) 2015-02-16
US20160027610A1 (en) 2016-01-28
US9852882B2 (en) 2017-12-26
WO2014201363A1 (en) 2014-12-18

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