TWI624015B - 用於半導體晶片裝置之散熱片 - Google Patents

用於半導體晶片裝置之散熱片 Download PDF

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TWI624015B
TWI624015B TW105132662A TW105132662A TWI624015B TW I624015 B TWI624015 B TW I624015B TW 105132662 A TW105132662 A TW 105132662A TW 105132662 A TW105132662 A TW 105132662A TW I624015 B TWI624015 B TW I624015B
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heat sink
substrate
components
thermally conductive
base
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TW105132662A
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TW201724401A (zh
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南森 Ａ 南德
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藝蘭能工藝有限責任公司
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    • G—PHYSICS
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    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
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    • G02B6/424—Mounting of the optical light guide
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4236—Fixing or mounting methods of the aligned elements
    • G02B6/424—Mounting of the optical light guide
    • G02B6/4243—Mounting of the optical light guide into a groove
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
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    • G—PHYSICS
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    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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Abstract

本發明係關於一種用於半導體晶片裝置之散熱片，其包括：在其下表面中之空腔，其用於接收該半導體晶片之頂表面上之電組件；及底座，其延伸穿過該半導體晶片中之開口用於接觸該半導體晶片之底表面上之電組件。亦可在該半導體晶片之該底表面上提供蓋，用於保護該等電組件並使該等電組件散熱至毗鄰裝置或印刷電路板。

Description

用於半導體晶片裝置之散熱片
本發明係關於用於半導體晶片裝置之散熱片，且具體而言係用於雙側半導體晶片裝置之散熱片。
隨著電子積體電路(IC)或光子積體電路(PIC)中之電功率消耗增加，使用傳統電子封裝方法將半導體晶片裝置之每個組件之操作溫度保持在可接受之範圍內變得愈來愈困難。 IC裝置通常接合至某種類型之基板，基板包括外延伸至封裝邊緣之電跡線，其中沿塗連接有其他電組件。若裝置之功率消耗高，則可將基板接合至散熱片用於散熱。然而，可證明基板與散熱片之間之界面為顯著熱障，從而將操作溫度升高至超過該裝置有效操作所需溫度。此外，通常僅可將來自裝置之過量熱沿一個界面(例如)引導至散熱片。使用以各種不同方式(例如球柵陣列(BGA)及直接接合方法)接合之組件之混合物，自基板上之所有組件最佳地散熱變得愈來愈困難。 本發明之一個目標係藉由提供用於雙側半導體晶片裝置之散熱片來克服先前技術之缺點。
根據一個實施例，半導體晶片裝置包含基板，其包括第一及第二側面，及在該第一側面與該第二側面之間延伸穿過該基板之開口；安裝在該等第一及第二側面上之第一光電子或電子組件；安裝在第一表面上且在與該第一側面上之組件熱接觸之散熱片，並包括延伸穿過該開口且暴露表面與該第二側面平行之延伸部；及安裝在該延伸部之該暴露表面上之至少一個第二光電子或電子組件；其中該散熱片為該第一側面上之該等第一組件及該暴露表面上之該等第二組件之每一者提供第一導熱路徑。 根據經修改實施例，散熱片包含用於安裝在基板之第一側面上之基座；自該基座之第一側面遠離該基板延伸之導熱銷或翅，其提供第一導熱路徑；延伸至該基座之第二側面中之空腔，其用於接收安裝在該基板之該第一側面上之光電子或電子組件，用於物理性及RF屏蔽該等光電子或電子組件；及自該基座之該第二側面延伸以延伸穿過該基板中之開口至該基板之第二側面之延伸部。
相關申請案之交互參照 本申請案主張於2015年10月7日提出申請之美國專利申請案第14/876,933號之優先權，該專利申請案係以全文引用的方式併入本文中。 儘管結合各個實施例及實例闡述本發明教示，但並非意欲將本發明教示限定於該等實施例。相反，本發明教示涵蓋各種替代方案及等效形式，如熟習此項技術者將瞭解。 參照圖1及2，電子(IC)或光電子(PIC)晶片裝置1包括基板2，其包含(例如)半導體印刷電路板(PCB)或更導熱之材料，例如氮化鋁。有源光電子及/或電子組件3分別安裝在基板2之第一及第二表面或側面4及5上。在圖解說明之實施例中，第一及第二表面或側面4及5係基板2之相對的上及下表面或側面。散熱片11分別安裝在第一及第二表面或側面4及5之一者上，且包括具有一或多個空腔12之基座10 (該等空腔12自基座10之底表面延伸至其中)，及例如自基座10之上側面向外(例如向上)延伸以便於自基板2向外散熱之散熱銷或翅13。每個空腔12之深度可實質上與其中接收之一個相應組件3之高度相同，使得相應組件3可直接接合至散熱片11中之空腔12之底表面以用於傳導熱量，同時散熱片11之基座10仍可至少部分地圍繞其周邊(例如沿基座10之側壁)耦合至基板2。 理想地，散熱片11包括導熱及導電材料，例如，具有大於150 W/m°K之導熱率之金屬，諸如鋁合金(167 W/m°K)或銅(350 W/m°K)。由於散熱片11導電，因此若組件3及散熱片11使用導電材料(例如焊料或導電環氧樹脂，例如填充銀之環氧樹脂)接合，則散熱片11可成為組件3之電接地，且亦可提供RF屏蔽。 基板2包括至少一個自第一表面4延伸穿過基板至第二表面5之開口14，其用於接收散熱片延伸部，例如自散熱片11之基座10之底表面在基座10之底表面平面下方延伸之底座部分15。底座部分15可在開口14之邊緣及底座部分15之周邊使用環氧樹脂或焊料固定至基板2。底座部分15可延伸穿過開口14，藉此底座部分15之暴露表面與基板2之第二表面5平行或理想地與基板2之第二表面5共面。 一或多個高功率IC或PIC 33可直接安裝在底座部分15之暴露表面上。高功率PIC可包含用於產生在第一光纖34上傳輸之光信號之雷射器，第一光纖34光學耦合至高功率PIC 33之一者，例如光學耦合至基板2之邊緣。高功率PIC 33亦可包括用於自第二光纖35接收光之光檢測器，第二光纖35光學耦合至光檢測器，例如光學耦合至基板2之邊緣，藉此形成雙向收發器。高功率PIC亦可包括跨阻抗放大器(TIA)晶片36及RF雷射驅動器37。 散熱片11可在擠出製程中製造，藉此使得橫截面(即空腔12、基座10之側壁及底座部分15)沿散熱片11之長度具有相同相對高度及寬度，且散熱片11之端部開放。然而，散熱片11之開放端部可藉由將一塊狀物焊接至基板2來封閉，例如與組件3同時焊接，此將防止基板2在夾緊壓力下翹曲。此外，若需要，則封閉空腔12可改良組件3之物理及RF屏蔽。然而，對於一些應用而言，當端部開放時，使空氣穿過空腔12流動可有益於除熱。 視情況，用單一整體結構(即與散熱片11之其餘部分整合)代替底座部分15，散熱片11可包括一或多個附接至散熱片11之基座12之底表面之獨立均熱片16，其延伸穿過至少一個開口14用於支撐在均熱片16之暴露表面上之高功率IC或PIC 33，以至少部分地補償散熱片11與高功率IC 33之間之可能的熱膨脹或接合問題。可選均熱片16可包括具有高導熱率(例如大於150 W/mK、較佳大於175 W/m°K)，但具有低於散熱片11之熱膨脹係數(CTE) (例如在25℃下小於20 × 10-6 m/(m°K)、較佳在25℃下小於10 × 10-6 m/(m°K))之材料。適宜材料之實例係銅(I＞400 W/m°K，在25℃下a＜16.8 × 10-6 m/(m°K))、CVD金剛石(I＞1800 W/m°K，在25℃下a＜1.0 × 10-6 m/(m°K))、AlSiC (I＞170 W/m°K，在25℃下a＜10.9 × 10-6 m/(m°K))、氮化鋁(I＞170 W/m°K，在25℃下a＜4.2 × 10-6 m/(m°K))、銅-鎢(I＞170 W/m°K，在25℃下a＜8.3 × 10-6 (m/m°K))或其他高導熱率及低熱膨脹材料。 可藉由使用接合線17或其他適宜方法及結構在高功率IC 33與基板2之間進行電連接。基板2亦可接合至散熱片11，但可能在與高功率IC或PIC 33不同之位準，以將高功率IC或PIC 33之有源頂層保持在相同之平面位準以有益於高頻性能。 基板2之第二表面5可包括凹部20或可分層，用於在凹部20之底部或下部層上接收組件3。可在(例如)圍繞凹部20之側壁上之第二表面5之上部層上提供電觸點18，用於經由集成或線接合引線將組件3與高功率IC或PIC 33電連接至連接裝置(例如連接PCB)上之配合電觸點。電連接器18可包括用於球柵陣列(BGA)、岸面柵格陣列(LGA)或針柵陣列(PGA)之適宜組件。凹部20之側壁可向上延伸高於組件3及高功率IC或PIC 33，藉此為其提供物理及RF保護。 可在基板2之第二表面5上安裝導熱罩或蓋21以覆蓋凹部20及組件3以及所有接合線17，並與安裝在基板2之第二表面5上之組件3及高功率IC或PIC 33之非敏感性部分接觸，以達到為基板2之第二側面上及底座15或均熱片16之暴露表面上之組件3及高功率IC或PIC 33提供更直接之散熱路徑之目的。一或多個底腳23自蓋21延伸與底座部分15或均熱片16接觸，用於蓋21之支撐/間隔件並自基板2之第一及第二表面4及5兩者上之組件3及高功率IC或PIC 33提供第二導熱路徑。第二導熱路徑可包括蓋21，使得與配合PCB直接接觸，該配合PCB具有依從性熱界面材料，例如熱環氧樹脂、熱墊或熱油脂。然後，蓋21與配合PCB之接觸可向下達成至連接PCB中之導熱(例如銅)接地平面層，以經由該連接PCB散熱。 在蓋21內部灌封或保形塗覆亦可係改良可靠性及/或散熱之選擇。可提供自蓋21延伸且與其整合之應變消除凸部22以至少部分地圍繞第一及第二光纖34及35之端部，第一及第二光纖34及35在該等端部耦合至基板2之邊緣。導熱蓋21可包括導熱率為至少150 W/m°K之導熱及導電材料，例如金屬，例如鋁合金6061 (167 W/m°K)或銅(350 W/m°K)。 因此，電光及電子組件3可附接至基板2之頂部及底表面4及5，並仍向兩側散熱。此係藉由以下方式來達成：將空腔12之每一者納入散熱片11中以為第一表面4上之組件3提供空間，及將凹部20納入基板2中以為底部側面5上之電子器件提供位置。在第一表面4上之組件3可與散熱片11直接接觸，而在底表面5上之組件3可與散熱片11及/或底部蓋21熱接觸以散熱至連接PCB。因此，每個組件3及高功率IC或PIC 33可以兩個導熱路徑(例如，相反)方向散熱，且在基板2上提供更多區域以將電組件3置於給定容積中。 上文已出於說明及闡述之目的呈現本發明之一或多個實施例之描述。其並非意欲巨細靡遺或將本發明限於所揭示之精確形式。根據以上教示可作出諸多修改及變化。本發明之範圍不欲受限於此詳細描述，而是由本文隨附申請專利範圍來限定。
1‧‧‧電子(積體電路)或光電子(光子積體電路)晶片裝置
2‧‧‧基板
3‧‧‧有源光電子及/或電子組件、組件、電光及電子組件、電組件
4‧‧‧第一側面、第一表面、頂表面
5‧‧‧第二側面、第二表面、底部側面、底表面
10‧‧‧基座
11‧‧‧散熱片
12‧‧‧空腔
13‧‧‧散熱銷或翅
14‧‧‧開口
15‧‧‧底座部分、底座
16‧‧‧均熱片
17‧‧‧接合線
18‧‧‧電觸點、電連接器
20‧‧‧凹部
21‧‧‧導熱罩、蓋、底部蓋
22‧‧‧應變消除凸部
23‧‧‧底腳
33‧‧‧高功率積體電路或光子積體電路、高功率積體電路
34‧‧‧第一光纖
35‧‧‧第二光纖
36‧‧‧跨阻抗放大器(TIA)晶片
37‧‧‧RF雷射驅動器
將參照代表本發明較佳實施例之附圖更詳細地闡述本發明，其中： 圖1係本發明之半導體晶片裝置之等角視圖之示意圖； 圖2係圖1之半導體晶片裝置之側視圖之示意圖；及 圖3係圖1之包括底部蓋之半導體晶片裝置等角視圖之示意圖。

Claims (18)

  1. 一種半導體晶片裝置，其包含：基板，其包括第一及第二側面，及在該第一側面與該第二側面之間延伸穿過該基板之開口；第一光電子或電子組件，其安裝在該等第一及第二側面上；散熱片，其安裝在該第一側面上且與該第一側面上之該等組件熱接觸，並包括延伸穿過該開口且暴露表面與該第二側面平行之延伸部；及至少一個第二光電子或電子組件，其安裝在該延伸部之該暴露表面上；其中該散熱片為該第一側面上之該等第一組件及該暴露表面上之該等第二組件之每一者提供第一導熱路徑。
  2. 如請求項1之裝置，其中該散熱片包含具有自其向外延伸之散熱銷或翅之基座，且該延伸部自該基座延伸穿過該開口；及其中該散熱片包含導熱材料之單一整體結構。
  3. 如請求項1之裝置，其中該散熱片包含具有自其向外延伸之散熱銷或翅之基座，且該延伸部自該基座延伸穿過該開口；及其中該延伸部包含均熱片部分，該均熱片部分包括熱膨脹係數低於該基座之材料。
  4. 如請求項3之裝置，其中該均熱片材料具有在25℃下小於20×10-6m/(m°K)之熱膨脹係數及大於150W/mK之導熱率。
  5. 如請求項3之裝置，其中該均熱片材料具有在25℃下小於10×10-6m/(m°K)之熱膨脹係數及大於175W/mK之導熱率。
  6. 如請求項1之裝置，其中該散熱片包括與該基板接觸之基座；其中該基座包括在其中之空腔，用於接收該基板之該第一側面上之該等第一組件，藉此物理及RF屏蔽該第一側面上之該等第一組件；及其中該第一側面上之該等第一組件與該等空腔之相應底部熱接觸。
  7. 如請求項1之裝置，其進一步包含安裝在該基板之該第二側面上之導熱罩，該導熱罩與該第二側面上之該等第一組件及該暴露表面上之該等第二組件之每一者熱接觸，當遠端散熱片熱耦合至該導熱罩時，為該第二側面上之該等第一組件及該暴露表面上之該等第二組件之每一者提供第二導熱路徑。
  8. 如請求項7之裝置，其中該第二導熱路徑與該第一導熱路徑方向相反。
  9. 如請求項7之裝置，其中該導熱罩包括延伸至與該散熱片接觸之底腳，藉此將該第一側面上之該等第一組件熱耦合至該第二導熱路徑，且將該第二側面上之該等第一組件熱耦合至該第一導熱路徑。
  10. 如請求項7之裝置，其中該基板之該第二側面包括由側壁所圍繞之凹部，用於接受該等第一及第二組件；且其中該等側壁延伸高於該第二側面中之該凹部中之該等第一組件。
  11. 一種散熱片，其包含：適於安裝在基板之第一側面上之基座；自該基座之第一側面遠離該基板延伸之導熱銷或翅，其提供第一導熱路徑；延伸至該基座之第二側面中且適於接收安裝在該基板之該第一側面上之光電子或電子組件，以物理性及RF屏蔽該等光電子或電子組件之空腔；及自該基座之該第二側面延伸以延伸穿過該基板中之開口至該基板之第二側面之延伸部。
  12. 如請求項11之散熱片，其包含導熱材料之單一整體結構。
  13. 如請求項11之散熱片，其中該延伸部包含均熱片部分，該均熱片部分包括熱膨脹係數低於該基座之材料。
  14. 如請求項13之散熱片，其中該均熱片材料具有在25℃下小於20×10-6m/(m°K)之熱膨脹係數及大於150W/mK之導熱率。
  15. 如請求項13之散熱片，其中該均熱片材料具有在25℃下小於10×10-6m/(m°K)之熱膨脹係數及大於175W/mK之導熱率。
  16. 如請求項11之散熱片，其進一步包含安裝在該基板之該第二側面上與該延伸部接觸之導熱罩，其提供第二導熱路徑。
  17. 如請求項16之散熱片，其中該第二導熱路徑與該第一導熱路徑方向相反。
  18. 如請求項16之散熱片，其中該導熱罩包括延伸至與該延伸部接觸之底腳，藉此將該基板之該第一側面上之該等光電子或電子組件熱耦合至該第二導熱路徑，且將該基板之該第二側面上或該延伸部上之光電子或電子組件熱耦合至該第一導熱路徑。
TW105132662A 2015-10-07 2016-10-07 用於半導體晶片裝置之散熱片 TWI624015B (zh)

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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10367284B2 (en) 2015-07-27 2019-07-30 Hewlett Packard Enterprise Development Lp Socket to support boards in a spaced relation
EP3278361A4 (en) * 2015-07-31 2019-02-20 Hewlett-Packard Enterprise Development LP MULTIPUCE MODULE
US9543226B1 (en) * 2015-10-07 2017-01-10 Coriant Advanced Technology, LLC Heat sink for a semiconductor chip device
WO2017188971A1 (en) * 2016-04-29 2017-11-02 Hewlett Packard Enterprise Development Lp First and second shields for thermal isolation
US10162139B1 (en) * 2017-07-27 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semicondcutor package
JP2019045777A (ja) * 2017-09-06 2019-03-22 セイコーエプソン株式会社 電気光学装置、電子機器及びプロジェクター
DE102018101264A1 (de) * 2018-01-22 2019-07-25 HELLA GmbH & Co. KGaA Leiterplatten- Kühlkörper- Aufbau und Verfahren hierzu
US10777430B2 (en) 2018-06-27 2020-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Photonic integrated package and method forming same
US11150700B2 (en) 2018-11-02 2021-10-19 Microsoft Technology Licensing, Llc Radio frequency filter fin pack design in consumer electronics
USD910582S1 (en) * 2020-01-29 2021-02-16 Veea Inc. Heat sink
USD910583S1 (en) * 2020-01-29 2021-02-16 Veea Inc. Heat sink
US11596052B2 (en) * 2020-06-08 2023-02-28 Intel Corporation Integrated voltage regulator for high performance devices
US11523542B2 (en) * 2021-04-07 2022-12-06 Dell Products L.P. Conformal memory heatsink
US11910518B2 (en) * 2021-05-26 2024-02-20 Huawei Technologies Canada Co., Ltd. Method and apparatus for heat sink mounting
DE102021208953A1 (de) * 2021-08-16 2023-02-16 Robert Bosch Gesellschaft mit beschränkter Haftung Verpackungsanordnung sowie LiDAR-System
CN115255695B (zh) * 2022-07-26 2024-01-16 上海江南长兴造船有限责任公司 一种减小厚薄板拼板坡口尺寸损失的精度控制方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6281573B1 (en) * 1998-03-31 2001-08-28 International Business Machines Corporation Thermal enhancement approach using solder compositions in the liquid state
TW200306471A (en) * 2001-12-21 2003-11-16 Intel Corp Dual-sided heat removal system
TW200614440A (en) * 2004-10-21 2006-05-01 Advanced Semiconductor Eng Cavity-down multiple chip package
TW200828566A (en) * 2006-12-18 2008-07-01 Mediatek Inc System in packages (SiPs) and fabrication methods thereof
TW200941659A (en) * 2008-03-25 2009-10-01 Bridge Semiconductor Corp Thermally enhanced package with embedded metal slug and patterned circuitry

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561011A (en) * 1982-10-05 1985-12-24 Mitsubishi Denki Kabushiki Kaisha Dimensionally stable semiconductor device
JP2970693B2 (ja) * 1991-02-18 1999-11-02 富士通株式会社 半導体装置
JP3540471B2 (ja) * 1995-11-30 2004-07-07 三菱電機株式会社 半導体モジュール
US6577504B1 (en) * 2000-08-30 2003-06-10 Intel Corporation Integrated heat sink for different size components with EMI suppression features
WO2004097896A2 (en) * 2003-04-26 2004-11-11 Freescale Semiconductor, Inc. A packaged integrated circuit having a heat spreader and method therefor
US6807061B1 (en) * 2003-04-28 2004-10-19 Hewlett-Packard Development Company, L.P. Stack up assembly
JP4148201B2 (ja) * 2004-08-11 2008-09-10 ソニー株式会社 電子回路装置
US8174108B2 (en) * 2010-03-24 2012-05-08 Avago Technologies Enterprise IP (Singapore) Pte. Ltd. Method for facilitating the stacking of integrated circuits having different areas and an integrated circuit package constructed by the method
JP5588956B2 (ja) * 2011-11-30 2014-09-10 株式会社 日立パワーデバイス パワー半導体装置
US9147600B2 (en) * 2013-01-03 2015-09-29 Infineon Technologies Ag Packages for multiple semiconductor chips
KR101526386B1 (ko) 2013-07-10 2015-06-08 현대자동차 주식회사 도로 정보 처리 장치 및 도로 정보 처리 방법
US20150257249A1 (en) * 2014-03-08 2015-09-10 Gerald Ho Kim Heat Sink With Protrusions On Multiple Sides Thereof And Apparatus Using The Same
US9543226B1 (en) * 2015-10-07 2017-01-10 Coriant Advanced Technology, LLC Heat sink for a semiconductor chip device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6281573B1 (en) * 1998-03-31 2001-08-28 International Business Machines Corporation Thermal enhancement approach using solder compositions in the liquid state
TW200306471A (en) * 2001-12-21 2003-11-16 Intel Corp Dual-sided heat removal system
TW200614440A (en) * 2004-10-21 2006-05-01 Advanced Semiconductor Eng Cavity-down multiple chip package
TW200828566A (en) * 2006-12-18 2008-07-01 Mediatek Inc System in packages (SiPs) and fabrication methods thereof
TW200941659A (en) * 2008-03-25 2009-10-01 Bridge Semiconductor Corp Thermally enhanced package with embedded metal slug and patterned circuitry

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