TWI623055B - 適用於電子元件製造中處理基材的處理系統、設備及方法 - Google Patents
適用於電子元件製造中處理基材的處理系統、設備及方法 Download PDFInfo
- Publication number
- TWI623055B TWI623055B TW103108710A TW103108710A TWI623055B TW I623055 B TWI623055 B TW I623055B TW 103108710 A TW103108710 A TW 103108710A TW 103108710 A TW103108710 A TW 103108710A TW I623055 B TWI623055 B TW I623055B
- Authority
- TW
- Taiwan
- Prior art keywords
- chamber
- channel
- main frame
- transfer
- electronic component
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 111
- 238000000034 method Methods 0.000 title claims abstract description 97
- 230000008569 process Effects 0.000 title claims abstract description 82
- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000012546 transfer Methods 0.000 claims abstract description 97
- 238000009826 distribution Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims 1
- 239000012636 effector Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 12
- 210000000707 wrist Anatomy 0.000 description 10
- 210000000245 forearm Anatomy 0.000 description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 238000001816 cooling Methods 0.000 description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 5
- 239000005751 Copper oxide Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910000431 copper oxide Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/86187—Plural tanks or compartments connected for serial flow
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361788825P | 2013-03-15 | 2013-03-15 | |
| US61/788,825 | 2013-03-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201442138A TW201442138A (zh) | 2014-11-01 |
| TWI623055B true TWI623055B (zh) | 2018-05-01 |
Family
ID=51522852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103108710A TWI623055B (zh) | 2013-03-15 | 2014-03-12 | 適用於電子元件製造中處理基材的處理系統、設備及方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9524889B2 (enExample) |
| JP (1) | JP6178488B2 (enExample) |
| KR (1) | KR101734821B1 (enExample) |
| CN (1) | CN105051861B (enExample) |
| TW (1) | TWI623055B (enExample) |
| WO (1) | WO2014150234A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6165518B2 (ja) * | 2013-06-25 | 2017-07-19 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法および真空処理装置 |
| US9435025B2 (en) | 2013-09-25 | 2016-09-06 | Applied Materials, Inc. | Gas apparatus, systems, and methods for chamber ports |
| US9717147B2 (en) | 2013-09-26 | 2017-07-25 | Applied Materials, Inc. | Electronic device manufacturing system |
| US20150090295A1 (en) | 2013-09-28 | 2015-04-02 | Applied Materials, Inc. | Apparatus and methods for a mask inverter |
| KR101770970B1 (ko) | 2013-09-30 | 2017-08-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 이송 챔버 가스 퍼지 장치, 전자 디바이스 프로세싱 시스템들, 및 퍼지 방법들 |
| JP6466955B2 (ja) | 2013-11-04 | 2019-02-06 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 側面数増強対応移送チャンバ、半導体デバイスの製造処理ツール及び処理方法 |
| US10520371B2 (en) | 2015-10-22 | 2019-12-31 | Applied Materials, Inc. | Optical fiber temperature sensors, temperature monitoring apparatus, and manufacturing methods |
| US10741428B2 (en) * | 2016-04-11 | 2020-08-11 | Applied Materials, Inc. | Semiconductor processing chamber |
| US10119191B2 (en) | 2016-06-08 | 2018-11-06 | Applied Materials, Inc. | High flow gas diffuser assemblies, systems, and methods |
| US10684159B2 (en) | 2016-06-27 | 2020-06-16 | Applied Materials, Inc. | Methods, systems, and apparatus for mass flow verification based on choked flow |
| KR102650824B1 (ko) * | 2016-10-18 | 2024-03-26 | 매슨 테크놀로지 인크 | 워크피스 처리를 위한 시스템 및 방법 |
| US10541165B2 (en) * | 2016-11-10 | 2020-01-21 | Applied Materials, Inc. | Systems, apparatus, and methods for an improved load port backplane |
| US10361099B2 (en) | 2017-06-23 | 2019-07-23 | Applied Materials, Inc. | Systems and methods of gap calibration via direct component contact in electronic device manufacturing systems |
| JP6991325B2 (ja) * | 2017-10-16 | 2022-01-12 | アプライド マテリアルズ インコーポレイテッド | デュアルロードロック構成による高温加熱支持ペデスタル |
| US11107709B2 (en) | 2019-01-30 | 2021-08-31 | Applied Materials, Inc. | Temperature-controllable process chambers, electronic device processing systems, and manufacturing methods |
| JP7316121B2 (ja) * | 2019-07-05 | 2023-07-27 | 東京エレクトロン株式会社 | 基板搬送装置及び基板搬送方法 |
| KR20240167943A (ko) * | 2019-07-12 | 2024-11-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 동시 기판 이송을 위한 로봇 |
| JP7240980B2 (ja) * | 2019-07-29 | 2023-03-16 | 東京エレクトロン株式会社 | 基板処理装置及び基板搬送方法 |
| JP7402658B2 (ja) * | 2019-11-01 | 2023-12-21 | 東京エレクトロン株式会社 | 基板収容ユニット及び基板搬送装置における真空搬送ユニットのメンテナンス方法 |
| TWI867219B (zh) * | 2020-05-12 | 2024-12-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 半導體處理系統 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201243924A (en) * | 2007-05-08 | 2012-11-01 | Applied Materials Inc | Substrate cleaning chamber and cleaning and conditioning methods |
| TW201250833A (en) * | 2006-05-03 | 2012-12-16 | Applied Materials Inc | Vacuum processing chamber suitable for etching high aspect ratio features and components of same |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5855681A (en) | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
| US5951770A (en) | 1997-06-04 | 1999-09-14 | Applied Materials, Inc. | Carousel wafer transfer system |
| US6575737B1 (en) | 1997-06-04 | 2003-06-10 | Applied Materials, Inc. | Method and apparatus for improved substrate handling |
| US6468353B1 (en) | 1997-06-04 | 2002-10-22 | Applied Materials, Inc. | Method and apparatus for improved substrate handling |
| US6182376B1 (en) * | 1997-07-10 | 2001-02-06 | Applied Materials, Inc. | Degassing method and apparatus |
| US6173938B1 (en) | 1998-09-22 | 2001-01-16 | Applied Materials, Inc. | Two speed air cylinder for slit valve motion control |
| US6355571B1 (en) | 1998-11-17 | 2002-03-12 | Applied Materials, Inc. | Method and apparatus for reducing copper oxidation and contamination in a semiconductor device |
| US20010049181A1 (en) | 1998-11-17 | 2001-12-06 | Sudha Rathi | Plasma treatment for cooper oxide reduction |
| US6347918B1 (en) | 1999-01-27 | 2002-02-19 | Applied Materials, Inc. | Inflatable slit/gate valve |
| JP4316752B2 (ja) | 1999-11-30 | 2009-08-19 | キヤノンアネルバ株式会社 | 真空搬送処理装置 |
| JP2004510221A (ja) | 2000-06-14 | 2004-04-02 | アプライド マテリアルズ インコーポレイテッド | 環境が制御されたチャンバ内で圧力を維持するための装置及び方法 |
| CN100435269C (zh) | 2001-07-15 | 2008-11-19 | 应用材料有限公司 | 处理系统 |
| US8110489B2 (en) * | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| US6764265B2 (en) | 2002-01-07 | 2004-07-20 | Applied Materials Inc. | Erosion resistant slit valve |
| US6656840B2 (en) | 2002-04-29 | 2003-12-02 | Applied Materials Inc. | Method for forming silicon containing layers on a substrate |
| US6896513B2 (en) * | 2002-09-12 | 2005-05-24 | Applied Materials, Inc. | Large area substrate processing system |
| US7007919B2 (en) | 2003-04-17 | 2006-03-07 | Applied Materials, Inc. | Slit valve method and apparatus |
| JP4931381B2 (ja) * | 2005-02-08 | 2012-05-16 | 東京エレクトロン株式会社 | 基板処理装置，基板処理装置の制御方法，プログラム |
| US20060176928A1 (en) * | 2005-02-08 | 2006-08-10 | Tokyo Electron Limited | Substrate processing apparatus, control method adopted in substrate processing apparatus and program |
| US20070020890A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Method and apparatus for semiconductor processing |
| US7658802B2 (en) | 2005-11-22 | 2010-02-09 | Applied Materials, Inc. | Apparatus and a method for cleaning a dielectric film |
| TWI342058B (en) | 2005-12-20 | 2011-05-11 | Applied Materials Inc | Extended mainframe designs for semiconductor device manufacturing equipment |
| US8991785B2 (en) | 2007-10-26 | 2015-03-31 | Applied Materials, Inc. | Methods and apparatus for sealing a slit valve door |
| KR101432562B1 (ko) * | 2007-12-31 | 2014-08-21 | (주)소슬 | 기판 처리 장치 및 기판 처리 방법 |
| CN103337453B (zh) | 2008-10-07 | 2017-10-24 | 应用材料公司 | 用于从蚀刻基板有效地移除卤素残余物的设备 |
| CN203205393U (zh) * | 2011-03-01 | 2013-09-18 | 应用材料公司 | 用于转移基板及限制自由基的箍组件 |
| KR101390900B1 (ko) * | 2011-05-31 | 2014-04-30 | 세메스 주식회사 | 기판처리장치 |
| JP2013033965A (ja) * | 2011-07-29 | 2013-02-14 | Semes Co Ltd | 基板処理装置、基板処理設備、及び基板処理方法 |
| CN106847737B (zh) * | 2012-02-29 | 2020-11-13 | 应用材料公司 | 配置中的除污及剥除处理腔室 |
-
2014
- 2014-03-10 US US14/202,763 patent/US9524889B2/en active Active
- 2014-03-10 JP JP2016501030A patent/JP6178488B2/ja active Active
- 2014-03-10 WO PCT/US2014/022656 patent/WO2014150234A1/en not_active Ceased
- 2014-03-10 CN CN201480016045.6A patent/CN105051861B/zh active Active
- 2014-03-10 KR KR1020157029256A patent/KR101734821B1/ko active Active
- 2014-03-12 TW TW103108710A patent/TWI623055B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201250833A (en) * | 2006-05-03 | 2012-12-16 | Applied Materials Inc | Vacuum processing chamber suitable for etching high aspect ratio features and components of same |
| TW201243924A (en) * | 2007-05-08 | 2012-11-01 | Applied Materials Inc | Substrate cleaning chamber and cleaning and conditioning methods |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101734821B1 (ko) | 2017-05-12 |
| US20140263165A1 (en) | 2014-09-18 |
| US9524889B2 (en) | 2016-12-20 |
| KR20150132416A (ko) | 2015-11-25 |
| CN105051861B (zh) | 2017-11-14 |
| JP2016512925A (ja) | 2016-05-09 |
| WO2014150234A1 (en) | 2014-09-25 |
| JP6178488B2 (ja) | 2017-08-09 |
| CN105051861A (zh) | 2015-11-11 |
| TW201442138A (zh) | 2014-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI623055B (zh) | 適用於電子元件製造中處理基材的處理系統、設備及方法 | |
| US9355876B2 (en) | Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations | |
| US11024531B2 (en) | Optimized low energy / high productivity deposition system | |
| US9818633B2 (en) | Equipment front end module for transferring wafers and method of transferring wafers | |
| US20100147396A1 (en) | Multiple-Substrate Transfer Apparatus and Multiple-Substrate Processing Apparatus | |
| TWI474430B (zh) | 用以處理基板之裝置、系統及方法 | |
| US20200381276A1 (en) | Multisubstrate process system | |
| US9177842B2 (en) | Degassing apparatus adapted to process substrates in multiple tiers with second actuator | |
| KR20070052331A (ko) | 다중-단일 웨이퍼 처리 장치 | |
| JP2013033965A (ja) | 基板処理装置、基板処理設備、及び基板処理方法 | |
| WO2020242806A1 (en) | Multisubstrate processing system | |
| US10707113B2 (en) | End effector assembly for clean/dirty substrate handling | |
| US20230212735A1 (en) | Substrate processing system | |
| CN115916478A (zh) | 用于将装载锁定件整合到工厂接口占地面积空间中的系统和方法 | |
| US7923380B2 (en) | Substrate processing apparatus and substrate processing method | |
| US20150030771A1 (en) | Cobalt substrate processing systems, apparatus, and methods | |
| KR100803562B1 (ko) | 기판 처리 장치 | |
| TWI906262B (zh) | 基板處理工具的線性配置 | |
| US20230085987A1 (en) | Linear arrangement for substrate processing tools | |
| KR20250048564A (ko) | 열적 보우 시프트 감소 | |
| KR20060076824A (ko) | 다중 로형 반도체 장비 |