TWI619829B - 材料沉積裝置、真空沉積系統及沉積材料的方法 - Google Patents

材料沉積裝置、真空沉積系統及沉積材料的方法 Download PDF

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Publication number
TWI619829B
TWI619829B TW104142233A TW104142233A TWI619829B TW I619829 B TWI619829 B TW I619829B TW 104142233 A TW104142233 A TW 104142233A TW 104142233 A TW104142233 A TW 104142233A TW I619829 B TWI619829 B TW I619829B
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TW
Taiwan
Prior art keywords
section
nozzle
size
deposition apparatus
vacuum
Prior art date
Application number
TW104142233A
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English (en)
Chinese (zh)
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TW201631192A (zh
Inventor
湯瑪士 爵伯勒
佑維 史奇伯勒
喬斯曼紐 地古坎柏
安德率斯 露博
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應用材料股份有限公司
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Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201631192A publication Critical patent/TW201631192A/zh
Application granted granted Critical
Publication of TWI619829B publication Critical patent/TWI619829B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
TW104142233A 2014-12-17 2015-12-16 材料沉積裝置、真空沉積系統及沉積材料的方法 TWI619829B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/EP2014/078299 WO2016095997A1 (en) 2014-12-17 2014-12-17 Material deposition arrangement, a vacuum deposition system and method for depositing material
??PCT/EP2014/078299 2014-12-17

Publications (2)

Publication Number Publication Date
TW201631192A TW201631192A (zh) 2016-09-01
TWI619829B true TWI619829B (zh) 2018-04-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW104142233A TWI619829B (zh) 2014-12-17 2015-12-16 材料沉積裝置、真空沉積系統及沉積材料的方法

Country Status (7)

Country Link
US (1) US20170314120A1 (cg-RX-API-DMAC7.html)
EP (1) EP3234213A1 (cg-RX-API-DMAC7.html)
JP (1) JP6513201B2 (cg-RX-API-DMAC7.html)
KR (1) KR20170095371A (cg-RX-API-DMAC7.html)
CN (1) CN107109624B (cg-RX-API-DMAC7.html)
TW (1) TWI619829B (cg-RX-API-DMAC7.html)
WO (1) WO2016095997A1 (cg-RX-API-DMAC7.html)

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JP6512543B2 (ja) * 2015-02-28 2019-05-15 ケニックス株式会社 蒸着セル、薄膜作製装置および薄膜作製方法
JP6657239B2 (ja) * 2016-09-22 2020-03-04 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 材料堆積源構成の分配アセンブリのためのノズル、材料堆積源構成、真空堆積システム、及び材料を堆積させるための方法
KR101899678B1 (ko) * 2016-12-21 2018-09-17 주식회사 포스코 필터유닛 및 이를 포함하는 도금장치
WO2018141365A1 (en) * 2017-01-31 2018-08-09 Applied Materials, Inc. Material deposition arrangement, vacuum deposition system and method therefor
CN106637091B (zh) * 2017-02-24 2019-08-30 旭科新能源股份有限公司 用于薄膜太阳能电池制造的高温蒸发炉
JP7102418B2 (ja) * 2018-04-18 2022-07-19 アプライド マテリアルズ インコーポレイテッド 蒸発した材料を基板の上に堆積するための蒸発源、堆積装置、蒸発した材料の蒸気圧を測定するための方法、及び蒸発した材料の蒸発速度を決定するための方法
WO2019233601A1 (en) * 2018-06-08 2019-12-12 Applied Materials, Inc. Static evaporation source, vacuum processing chamber, and method of depositing material on a substrate
CN113166925B (zh) * 2018-12-11 2023-12-22 应用材料公司 用于沉积已蒸发材料的蒸气源、用于蒸气源的喷嘴、真空沉积系统和用于沉积已蒸发材料的方法
WO2020122944A1 (en) * 2018-12-14 2020-06-18 Applied Materials, Inc. Measurement assembly for measuring a deposition rate and method therefore
KR102219435B1 (ko) * 2019-05-28 2021-02-24 경기대학교 산학협력단 노즐 및 노즐을 포함한 증착 장치
WO2020242648A1 (en) * 2019-05-31 2020-12-03 Applied Materials, Inc. Methods and systems for forming films on substrates
JP2021041375A (ja) * 2019-09-13 2021-03-18 株式会社東芝 導電性流体用吐出ヘッド
WO2021085685A1 (en) * 2019-10-31 2021-05-06 Applied Materials, Inc Material deposition arrangement, vacuum deposition system, and method for manufacturing a material deposition arrangement
CN117396629A (zh) * 2021-05-21 2024-01-12 应用材料公司 用于材料沉积源的分配器的喷嘴、材料沉积源、真空沉积系统以及用于将材料沉积的方法

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US20120064728A1 (en) * 2010-09-15 2012-03-15 Jeong-Ho Yi Substrate depositing system and depositing method using the same
KR20140017730A (ko) * 2012-07-31 2014-02-12 주식회사 야스 대용량 고온 증발원

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JP2006225725A (ja) * 2005-02-18 2006-08-31 Hitachi Zosen Corp 蒸着装置
US20120064728A1 (en) * 2010-09-15 2012-03-15 Jeong-Ho Yi Substrate depositing system and depositing method using the same
KR20140017730A (ko) * 2012-07-31 2014-02-12 주식회사 야스 대용량 고온 증발원

Also Published As

Publication number Publication date
US20170314120A1 (en) 2017-11-02
JP6513201B2 (ja) 2019-05-15
JP2018501405A (ja) 2018-01-18
TW201631192A (zh) 2016-09-01
CN107109624A (zh) 2017-08-29
CN107109624B (zh) 2019-10-15
KR20170095371A (ko) 2017-08-22
EP3234213A1 (en) 2017-10-25
WO2016095997A1 (en) 2016-06-23

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