TWI619823B - 真空沈積系統及用以於其中沈積材料之方法 - Google Patents

真空沈積系統及用以於其中沈積材料之方法 Download PDF

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Publication number
TWI619823B
TWI619823B TW104140033A TW104140033A TWI619823B TW I619823 B TWI619823 B TW I619823B TW 104140033 A TW104140033 A TW 104140033A TW 104140033 A TW104140033 A TW 104140033A TW I619823 B TWI619823 B TW I619823B
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TW
Taiwan
Prior art keywords
substrate
vacuum
deposition system
chamber
deposition
Prior art date
Application number
TW104140033A
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English (en)
Chinese (zh)
Other versions
TW201631185A (zh
Inventor
喬斯曼紐 地古坎柏
史丹分 班格特
奧利佛 黑蒙
戴德 海斯
Original Assignee
應用材料股份有限公司
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Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201631185A publication Critical patent/TW201631185A/zh
Application granted granted Critical
Publication of TWI619823B publication Critical patent/TWI619823B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
TW104140033A 2014-12-05 2015-12-01 真空沈積系統及用以於其中沈積材料之方法 TWI619823B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
??PCT/EP2014/076747 2014-12-05
PCT/EP2014/076747 WO2016087005A1 (en) 2014-12-05 2014-12-05 Material deposition system and method for depositing material in a material deposition system

Publications (2)

Publication Number Publication Date
TW201631185A TW201631185A (zh) 2016-09-01
TWI619823B true TWI619823B (zh) 2018-04-01

Family

ID=52130229

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104140033A TWI619823B (zh) 2014-12-05 2015-12-01 真空沈積系統及用以於其中沈積材料之方法

Country Status (5)

Country Link
JP (1) JP6550464B2 (enExample)
KR (1) KR101932943B1 (enExample)
CN (1) CN107002223B (enExample)
TW (1) TWI619823B (enExample)
WO (1) WO2016087005A1 (enExample)

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CN106637091B (zh) * 2017-02-24 2019-08-30 旭科新能源股份有限公司 用于薄膜太阳能电池制造的高温蒸发炉
US11508595B2 (en) 2017-08-24 2022-11-22 Applied Materials, Inc. Apparatus and method for contactless transportation of a device in a vacuum processing system
WO2019096392A1 (en) * 2017-11-16 2019-05-23 Applied Materials, Inc. Method of cooling a deposition source, chamber for cooling a deposition source and deposition system
KR102495121B1 (ko) * 2018-03-28 2023-02-06 어플라이드 머티어리얼스, 인코포레이티드 기판을 프로세싱하는 진공 프로세싱 장치 및 방법
CN111663104A (zh) * 2020-06-24 2020-09-15 武汉华星光电半导体显示技术有限公司 蒸镀系统及蒸镀方法
US12593652B2 (en) 2020-11-23 2026-03-31 Lg Electronics Inc. Self-assembly device

Citations (5)

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US20070272156A1 (en) * 2006-05-23 2007-11-29 Semes Co., Ltd. Linear evaporator for manufacturing organic light emitting device using numerous crucibles
US20110052795A1 (en) * 2009-09-01 2011-03-03 Samsung Mobile Display Co., Ltd. Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same
US20120064728A1 (en) * 2010-09-15 2012-03-15 Jeong-Ho Yi Substrate depositing system and depositing method using the same
JP5364200B2 (ja) * 2009-03-31 2013-12-11 エスエヌユー プレシジョン カンパニー リミテッド 薄膜蒸着装置と薄膜蒸着方法及び薄膜蒸着システム
US8734914B2 (en) * 2007-04-27 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Film formation method and method for manufacturing light-emitting device

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US8900366B2 (en) * 2002-04-15 2014-12-02 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
JP4013859B2 (ja) * 2003-07-17 2007-11-28 富士電機ホールディングス株式会社 有機薄膜の製造装置
JP4685404B2 (ja) * 2003-10-15 2011-05-18 三星モバイルディスプレイ株式會社 有機電界発光素子の垂直蒸着方法,その装置,及び有機電界発光素子の垂直蒸着装置に使用される蒸着源
KR100635496B1 (ko) * 2005-02-25 2006-10-17 삼성에스디아이 주식회사 격벽을 구비하는 측면 분사형 선형 증발원 및 그 증발원을구비하는 증착장치
US20080131587A1 (en) * 2006-11-30 2008-06-05 Boroson Michael L Depositing organic material onto an oled substrate
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
JP2014005478A (ja) * 2010-10-08 2014-01-16 Kaneka Corp 蒸着装置
EP2748349A1 (en) * 2011-08-25 2014-07-02 Applied Materials, Inc. Corner cut mask
JP2013163837A (ja) * 2012-02-09 2013-08-22 Canon Tokki Corp 蒸着装置並びに蒸着装置を用いた成膜方法
CN106995911B (zh) * 2013-12-10 2020-07-31 应用材料公司 蒸发源、沉积设备以及用于蒸发有机材料的方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070272156A1 (en) * 2006-05-23 2007-11-29 Semes Co., Ltd. Linear evaporator for manufacturing organic light emitting device using numerous crucibles
US8734914B2 (en) * 2007-04-27 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Film formation method and method for manufacturing light-emitting device
JP5364200B2 (ja) * 2009-03-31 2013-12-11 エスエヌユー プレシジョン カンパニー リミテッド 薄膜蒸着装置と薄膜蒸着方法及び薄膜蒸着システム
US20110052795A1 (en) * 2009-09-01 2011-03-03 Samsung Mobile Display Co., Ltd. Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same
US20120064728A1 (en) * 2010-09-15 2012-03-15 Jeong-Ho Yi Substrate depositing system and depositing method using the same

Also Published As

Publication number Publication date
JP6550464B2 (ja) 2019-07-24
CN107002223A (zh) 2017-08-01
JP2017538039A (ja) 2017-12-21
KR20170092670A (ko) 2017-08-11
KR101932943B1 (ko) 2018-12-27
WO2016087005A1 (en) 2016-06-09
CN107002223B (zh) 2019-11-05
TW201631185A (zh) 2016-09-01

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