TWI619161B - Substrate treating apparatus - Google Patents
Substrate treating apparatus Download PDFInfo
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- TWI619161B TWI619161B TW105136115A TW105136115A TWI619161B TW I619161 B TWI619161 B TW I619161B TW 105136115 A TW105136115 A TW 105136115A TW 105136115 A TW105136115 A TW 105136115A TW I619161 B TWI619161 B TW I619161B
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- 239000000758 substrate Substances 0.000 title claims abstract description 90
- 239000007788 liquid Substances 0.000 claims abstract description 260
- 230000007246 mechanism Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 23
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 238000009434 installation Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229920001774 Perfluoroether Polymers 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- -1 polytetra-fluoroethylene Polymers 0.000 description 1
- 229940058401 polytetrafluoroethylene Drugs 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本發明之基板處理裝置係將自噴出管7朝向供給位置SP所供給之處理液的液流，藉由液流分散構件8而主要地被分散為朝向處理槽1之中央之底面側的液流、與朝向處理槽1之中央之往斜上方的液流之兩個液流。因此，由於可使較強之液流分散為在處理槽1之中央部上升之處理液的液流、與自斜下方和該液流合流之液流，所以該液流會在基板W面之中央部成為相對較廣之寬度而上升。其結果，由於在基板W面附近之處理液之液流的差異被緩和，因此可提升處理之面內均勻性。 The substrate processing apparatus of the present invention is mainly a liquid flow that is directed toward the bottom surface side of the center of the processing tank 1 by the liquid flow dispersing member 8 by the liquid flow of the processing liquid supplied from the discharge pipe 7 toward the supply position SP. And two liquid streams which are diagonally upward toward the center of the processing tank 1. Therefore, since a strong liquid flow can be dispersed into the liquid flow of the processing liquid rising in the central portion of the processing tank 1 and the liquid flow that merges with the bottom and the liquid flow diagonally, the liquid flow will be on the W surface of the substrate. The central portion rises to a relatively wide width. As a result, since the difference in the liquid flow of the processing liquid near the W surface of the substrate is reduced, the in-plane uniformity of the processing can be improved.
Description
本發明係關於藉由處理液對半導體晶圓、液晶顯示器用基板、電漿顯示器用基板、有機EL(ElectroLuminescence；電致發光)用基板、FED(Field Emission Display；場發射顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、太陽能電池用基板(以下，簡稱為基板)進行處理之基板處理裝置。 The present invention relates to a semiconductor wafer, a substrate for a liquid crystal display, a substrate for a plasma display, a substrate for an organic EL (ElectroLuminescence), a substrate for a field emission display (FED), and an optical disc by a processing liquid. A substrate processing apparatus that processes a substrate, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, and a substrate for a solar cell (hereinafter, simply referred to as a substrate).
習知，作為此種裝置，存在有具備處理槽、噴出管之基板處理裝置。處理槽貯存處理液，收容基板並藉由處理液進行處理。噴出管對處理槽供給處理液。噴出管係配置於處理槽之底部且在基板之左右兩側。一對噴出管分別朝向處理槽之中央部供給處理液。所供給之處理液在處理槽之底部中央附近形成上升流，並朝向上方流動。自噴出管所供給之處理液之液流中，基板面附近之液流在自左右所供給之處理液上升之基板面上中央部的狹窄範圍變得最快，而與液流較慢之部位容易產生較大的差異。若在如此之基板面附近之處理液的液流產生較大的差異，由於在液流較強(較快)之部分，處理進展較快，因此處理之面內均勻性會惡化。 Conventionally, as such an apparatus, there is a substrate processing apparatus including a processing tank and a discharge pipe. The processing tank stores a processing liquid, stores a substrate, and performs processing with the processing liquid. The discharge pipe supplies the processing liquid to the processing tank. The ejection pipes are arranged at the bottom of the processing tank and on the left and right sides of the substrate. The pair of ejection pipes respectively supply the processing liquid toward the central portion of the processing tank. The supplied processing liquid forms an upward flow near the center of the bottom of the processing tank, and flows upward. Of the liquid flow of the processing liquid supplied from the ejection tube, the liquid flow near the substrate surface becomes the fastest in the narrow range of the center portion of the substrate surface which rises from the left and right supplied processing liquids, and the portion with the slower liquid flow Easy to make a big difference. If there is a large difference in the liquid flow of the processing liquid near such a substrate surface, since the processing progresses faster in the portion where the liquid flow is strong (faster), the in-plane uniformity of the processing will deteriorate.
因此，提出有一種裝置，其配置複數對之噴出管，依序對供給處理液之噴出管進行切換，以使所供給之處理液的液流之差異緩和(例如參照專利文獻1、2)。 Therefore, a device has been proposed in which a plurality of pairs of ejection pipes are arranged, and the ejection pipes for supplying the processing liquid are sequentially switched so as to reduce the difference in the liquid flow of the supplied processing liquid (for example, refer to Patent Documents 1 and 2).
[專利文獻1]日本專利特開2008-288442號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2008-288442
[專利文獻2]日本專利特開平11-150091號公報 [Patent Document 2] Japanese Patent Laid-Open No. 11-150091
然而，於具有該種構成之習知例之情形時，存在有如下問題。亦即，習知之裝置由於具備有複數對噴出管，而需要對供給處理液之噴出管進行切換，因此存在有構成複雜化並且控制會變得繁雜之問題。 However, in the case of a conventional example having such a structure, there are the following problems. That is, since the conventional device includes a plurality of pairs of discharge pipes, and it is necessary to switch the discharge pipes for supplying the processing liquid, there is a problem that the configuration is complicated and the control becomes complicated.
本發明係鑑於上述情形而完成者，其目的在於提供一種基板處理裝置，其可以簡單之構成來抑制處理液之液流的差異，以提升處理之面內均勻性。 The present invention has been made in view of the above-mentioned circumstances, and an object thereof is to provide a substrate processing apparatus which can be simply structured to suppress the difference in the liquid flow of the processing liquid to improve the in-plane uniformity of processing.
本發明為了達成上述目的，而採用如下之構成。亦即，本發明係一種藉由處理液對基板進行既定之處理之基板處理裝置，其特徵在於具備有：處理槽，其貯存處理液，收容基板並對基板進行處理；一對噴出管，其係配置於上述處理槽之底部側且在所收容之基板的左右方向，朝向較上述處理槽之底面中央更近前之供給位置並供給處理液；及液流分散構件，其與上述處理槽之底面之間隔開間隙地被配置於上述一對噴出管之各者與對應於上述一對噴出管之上述供給位置之間。 In order to achieve the above object, the present invention adopts the following configuration. That is, the present invention is a substrate processing apparatus for performing predetermined processing on a substrate by a processing liquid, which is characterized by being provided with a processing tank that stores a processing liquid, stores the substrate and processes the substrate, and a pair of ejection tubes, which It is arranged on the bottom side of the processing tank and in the left-right direction of the substrate to be accommodated, and supplies a processing liquid toward a supply position closer to the center of the bottom surface of the processing tank, and a liquid flow dispersing member, which is connected to the bottom surface of the processing tank A gap is arranged between each of the pair of discharge pipes and the supply position corresponding to the pair of discharge pipes.
根據本發明可發揮如下之作用、功效：自噴出管所供 給之處理液係藉由液流分散構件，被分為沿著處理槽之底面的液流、與朝向處理槽中央之往斜上方的液流。因此，由於可使較強之液流分散為在中央部上升之液流、與自斜下方合流於該液流之液流，所以該液流會在基板面之中央部成為較廣之寬度而上升。其結果，由於可緩和基板面附近之處理液之液流的差異，因此可提升處理之面內均勻性。 According to the present invention, the following functions and effects can be exerted: The processing liquid is divided into a liquid flow along the bottom surface of the processing tank and a liquid flow diagonally upward toward the center of the processing tank by the liquid flow dispersing member. Therefore, since a strong liquid flow can be dispersed into a liquid flow rising at the central portion and a liquid flow combined with the liquid flow from an oblique downward direction, the liquid flow will have a wider width at the central portion of the substrate surface. rise. As a result, the difference in the liquid flow of the processing liquid near the substrate surface can be alleviated, so that the in-plane uniformity of the processing can be improved.
又，在本發明中，較佳為上述液流分散構件之基板面方向上之縱剖面呈圓形形狀。 Moreover, in this invention, it is preferable that the longitudinal cross-section of the said liquid flow dispersion member in the board | substrate surface direction is circular shape.
可使自噴出管所供給之處理液圓滑地朝兩方向分散。 The treatment liquid supplied from the discharge pipe can be smoothly dispersed in both directions.
又，在本發明中，較佳為上述液流分散構件之基板面方向上之縱剖面呈三角形形狀，且一個頂點被朝向上述噴出管側。 Moreover, in this invention, it is preferable that the longitudinal cross-section of the said liquid flow dispersion member in the board | substrate surface direction is a triangle shape, and one vertex is oriented toward the said discharge pipe side.
可使自噴出管所供給之處理液朝兩方向分散，並且可藉由三角形之邊的角度而容易地控制液流之方向。 The processing liquid supplied from the discharge pipe can be dispersed in two directions, and the direction of the liquid flow can be easily controlled by the angle of the sides of the triangle.
又，在本發明中，較佳為具備有保持立起姿勢之基板之下緣中央部之中央部保持部、及保持基板之左右側之下緣之一對側部保持部，且具備有：可遍及作為上述處理槽之上方的待機位置與作為上述處理裝置之內部的處理位置進行移動之升降機，上述液流分散構件朝在上述升降機上基板所排列之方向具有長軸。 Further, in the present invention, it is preferable to include a central portion holding portion that holds a central portion of the lower edge of the substrate in a standing position, and a pair of side portion holding portions that hold one of the lower edges of the left and right sides of the substrate and include The lifter can be moved across the standby position above the processing tank and the processing position inside the processing device, and the liquid flow dispersing member has a long axis in a direction in which the substrates are arranged on the lifter.
由於液流分散構件朝由升降機所保持之基板的排列方向具有長軸，因此可提升所有之基板面之處理的面內均勻性。 Since the liquid flow dispersing member has a long axis in the alignment direction of the substrates held by the elevator, the in-plane uniformity of the processing of all substrate surfaces can be improved.
又，在本發明中，較佳為上述液流分散構件係配置於上述供給位置與上述升降機之側部保持部之間。 Moreover, in this invention, it is preferable that the said liquid flow dispersing member is arrange | positioned between the said supply position and the side part holding part of the said elevator.
若在較供給位置更遠之位置配置液流分散構件，由於處理液在供給位置就已分散成某種程度，因此擴展液流寬度的效果 會變低。另一方面，若在較升降機之側部保持部更靠近噴出管之位置配置液流分散構件，由於處理液會被液流分散構件與升降機之側部保持部所遮斷，因此處理液之液流會變得非常差。因此，藉由在供給位置與升降機之側部保持部之間配置液流分散構件，可適當地使處理液之液流分散。 If the liquid flow dispersing member is disposed at a position farther from the supply position, the treatment liquid is dispersed to a certain extent at the supply position, so the effect of expanding the liquid flow width Will go low. On the other hand, if the liquid flow dispersing member is disposed at a position closer to the ejection tube than the side holding portion of the lifter, the processing liquid is blocked by the liquid flow dispersing member and the side holding portion of the lifter. The flow becomes very bad. Therefore, by disposing a liquid flow dispersing member between the supply position and the side holding portion of the elevator, the liquid flow of the processing liquid can be appropriately dispersed.
又，在本發明中，較佳為上述液流分散構件係藉由被配置於基板所排列方向之兩端部的安裝機構而被配置於上述處理槽之底面，上述安裝機構具備有：端部構件，其由氟樹脂所構成，被安裝於上述噴出管之外周面之一部位，且具備有朝上述處理槽之中央部側突出之連結部；支撐構件，其係配置於上述端部構件之間而支撐上述液流分散構件，且具備有朝向上述噴出管側突出之連結部；及連結管，其係在使上述端部構件之連結部與上述支撐構件之連結部分開而對向之狀態下被插通，連結上述端部構件與上述支撐構件。 Moreover, in this invention, it is preferable that the said liquid flow dispersing member is arrange | positioned at the bottom surface of the said process tank by the attachment mechanism arrange | positioned at the both ends of the board arrangement direction, and the said attachment mechanism is provided with the edge part A member composed of a fluororesin, which is mounted on a part of the outer peripheral surface of the discharge pipe, and has a connecting portion protruding toward the central portion side of the processing tank; a support member, which is arranged on the end member While supporting the liquid flow dispersing member, and provided with a connection portion protruding toward the discharge pipe side; and a connection pipe in a state where the connection portion of the end member and the connection portion of the support member are opposed to each other The bottom is inserted through and connects the end member and the support member.
液流分散構件係藉由安裝機構而被安裝於處理槽，該安裝機構係由支撐構件所支撐，並藉由端部構件與連結管連結支撐構件所構成。若處理液為高溫，則氟樹脂製之安裝機構雖會膨脹，但由於連結管係在使端部構件之連結部與支撐構件之連結部分開而對向之狀態下被插通，因此可吸收該膨脹量。因此，可穩定地將支撐構件安裝於處理槽，同時可防止處理槽因安裝機構之膨脹而破損之情形。 The liquid flow dispersing member is mounted on the processing tank by a mounting mechanism, which is supported by a supporting member and is constituted by an end member and a connecting pipe connecting the supporting member. If the treatment liquid is at a high temperature, the mounting mechanism made of fluororesin will swell, but the connection pipe is inserted through the connection part of the end member and the connection part of the support member so as to face each other, so it can be absorbed. This expansion. Therefore, it is possible to stably mount the supporting member to the processing tank and prevent the processing tank from being damaged due to the expansion of the mounting mechanism.
又，在本發明中，較佳為上述液流分散構件係相對於上述處理槽可裝卸自如地被安裝。 Moreover, in this invention, it is preferable that the said liquid flow dispersing member is removably attached to the said processing tank.
藉由將液流分散構件設為相對於處理槽裝卸自如，可 容易地進行液流分散構件之更換或清掃等之維護。 By making the liquid flow dispersing member freely attachable to the processing tank, it is possible to Easily perform maintenance such as replacement or cleaning of the liquid flow dispersing member.
根據本發明之基板處理裝置，自噴出管所供給之處理液，係藉由液流分散構件而被分為沿著處理槽底面的液流，與朝向處理槽中央之往斜上方的液流。因此，由於可使較強之液流分散為在中央部上升之液流、與自斜下方合流於該液流之液流，所以該液流係於基板面之中央部成為較廣之寬度而上升。其結果，因為可緩和基板面附近之處理液之液流的差異，因此可提升處理之面內均勻性。 According to the substrate processing apparatus of the present invention, the processing liquid supplied from the ejection pipe is divided into a liquid flow along the bottom surface of the processing tank and a liquid flow obliquely upward toward the center of the processing tank by the liquid flow dispersing member. Therefore, since a strong liquid flow can be dispersed into a liquid flow rising at the central portion and a liquid flow combined with the liquid flow from an oblique downward direction, the liquid flow has a wider width at the central portion of the substrate surface. rise. As a result, the difference in the liquid flow of the processing liquid near the substrate surface can be alleviated, so that the in-plane uniformity of the processing can be improved.
1‧‧‧處理槽 1‧‧‧ treatment tank
3‧‧‧溢流槽 3‧‧‧ overflow tank
5‧‧‧升降機 5‧‧‧ lift
7‧‧‧噴出管 7‧‧‧ spout tube
8、8A、8B‧‧‧液流分散構件 8, 8A, 8B‧‧‧Liquid flow dispersing member
9‧‧‧循環配管 9‧‧‧Circular piping
11‧‧‧泵 11‧‧‧Pump
13‧‧‧循環管路用加熱器 13‧‧‧Circuit line heater
15‧‧‧過濾器 15‧‧‧ Filter
17‧‧‧供給管 17‧‧‧ supply pipe
19‧‧‧處理液供給源 19‧‧‧ Treatment liquid supply source
21‧‧‧開閉閥 21‧‧‧ On-off valve
23‧‧‧背板 23‧‧‧ back plate
25‧‧‧中央部保持部 25‧‧‧ Central Department Holding Department
27‧‧‧側部保持部 27‧‧‧side holding section
29‧‧‧控制部 29‧‧‧Control Department
31‧‧‧安裝機構 31‧‧‧Installation mechanism
33‧‧‧端部構件 33‧‧‧ end member
35‧‧‧支撐構件 35‧‧‧ support member
37‧‧‧連結管 37‧‧‧ connecting tube
39‧‧‧嵌合部 39‧‧‧ Fitting Department
41、43‧‧‧連結部 41, 43‧‧‧ Connection Department
GP‧‧‧間隙 GP‧‧‧ Clearance
HVR‧‧‧流速快之區域 HVR‧‧‧Fast flow area
LVR‧‧‧流速慢之區域 LVR‧‧‧Slow areas
SP‧‧‧供給位置 SP‧‧‧ Supply location
TL‧‧‧處理液之液流 TL‧‧‧ liquid flow
TL1‧‧‧處理液之底面側之液流 TL1‧‧‧ liquid flow from the bottom side of the treatment liquid
TL2‧‧‧處理液之朝斜上方之液流 TL2‧‧‧ liquid flow obliquely upward
W‧‧‧基板 W‧‧‧ substrate
WD‧‧‧上升流之寬度 WD‧‧‧Width of Upstream
圖1係顯示實施例之基板處理裝置之概略構成之方塊圖。 FIG. 1 is a block diagram showing a schematic configuration of a substrate processing apparatus of an embodiment.
圖2係顯示液流分散構件之圖。 Fig. 2 is a view showing a liquid flow dispersing member.
圖3係安裝機構之俯視圖。 Figure 3 is a top view of the mounting mechanism.
圖4係將安裝機構之正面之一部分放大之圖。 FIG. 4 is an enlarged view of a part of the front surface of the mounting mechanism.
圖5係顯示不具有液流分散構件之情形時之液流之示意圖。 FIG. 5 is a schematic view showing a liquid flow in a case where there is no liquid flow dispersing member.
圖6係顯示將液流分散構件配置於距中心50mm之情形時之液流之示意圖。 FIG. 6 is a schematic diagram showing a liquid flow when the liquid flow dispersing member is disposed at a distance of 50 mm from the center.
圖7係顯示將液流分散構件配置於距中心60mm之情形時之液流之示意圖。 FIG. 7 is a schematic diagram showing a liquid flow when the liquid flow dispersing member is disposed at a distance of 60 mm from the center.
圖8係顯示將液流分散構件配置於距中心70mm之情形時之液流之示意圖。 FIG. 8 is a schematic diagram showing a liquid flow when the liquid flow dispersing member is arranged at a distance of 70 mm from the center.
圖9係顯示將液流分散構件配置於距中心80mm之情形時之液流之示意圖。 FIG. 9 is a schematic diagram showing a liquid flow when the liquid flow dispersing member is arranged at a distance of 80 mm from the center.
圖10係顯示將液流分散構件配置於距中心90mm之情形時之液流之示意圖。 FIG. 10 is a schematic diagram showing a liquid flow when the liquid flow dispersing member is disposed at a distance of 90 mm from the center.
圖11係顯示將液流分散構件配置於距中心100mm之情形時之液流之示意圖。 FIG. 11 is a schematic view showing a liquid flow when the liquid flow dispersing member is arranged at a distance of 100 mm from the center.
圖12係顯示將液流分散構件配置於距中心110mm之情形時之液流之示意圖。 FIG. 12 is a schematic diagram showing a liquid flow when the liquid flow dispersing member is disposed at a distance of 110 mm from the center.
圖13係顯示將液流分散構件配置於距中心100mm，且將與底面之間隙設為2.5mm之情形時之液流之示意圖。 FIG. 13 is a schematic diagram showing a liquid flow when the liquid flow dispersing member is disposed at a distance of 100 mm from the center and the gap between the liquid flow dispersing member and the bottom surface is set to 2.5 mm.
圖14係顯示將液流分散構件配置於距中心100mm，且將液流分散構件之直徑設為30mm之情形時之液流之示意圖。 FIG. 14 is a schematic diagram showing a liquid flow when the liquid flow dispersing member is disposed at a distance of 100 mm from the center and the diameter of the liquid flow dispersing member is set to 30 mm.
圖15係顯示將液流分散構件配置於距中心100mm，且將液流分散構件之直徑設為26mm之情形時之液流之示意圖。 FIG. 15 is a schematic diagram showing a liquid flow when the liquid flow dispersing member is disposed at a distance of 100 mm from the center and the diameter of the liquid flow dispersing member is set to 26 mm.
圖16係顯示將液流分散構件配置於距中心100mm，且將液流分散構件之直徑設為18mm之情形時之液流之示意圖。 FIG. 16 is a schematic diagram showing a liquid flow when the liquid flow dispersing member is disposed at a distance of 100 mm from the center and the diameter of the liquid flow dispersing member is set to 18 mm.
圖17係顯示液流分散構件之第1變形例之圖。 Fig. 17 is a view showing a first modification of the liquid flow dispersing member.
圖18係顯示液流分散構件之第2變形例之圖。 Fig. 18 is a view showing a second modification of the liquid flow dispersing member.
以下，參照圖式對本發明一實施例進行說明。圖1係顯示實施例之基板處理裝置之概略構成之方塊圖。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a block diagram showing a schematic configuration of a substrate processing apparatus of an embodiment.
本實施例之基板處理裝置係可藉由處理液總括性地對複數片基板W進行處理之批次式裝置，其具備有處理槽1、溢流槽3、及升降機5。 The substrate processing apparatus of this embodiment is a batch-type apparatus capable of processing a plurality of substrates W in an integrated manner by a processing liquid, and includes a processing tank 1, an overflow tank 3, and an elevator 5.
處理槽1貯存處理液，以平行地排列之狀態收容複數片基板W並同時地對複數片基板W進行處理。處理槽1在基板排 列方向上之截面(圖1)，呈底部中央成為低谷之形狀，並具備有供給處理液之一對噴出管7。一對噴出管7係配置於處理槽1之底部側且基板W之排列之左右方向的側面部。一對噴出管7朝向位於較處理槽1之中央部靠近噴出管7側之近前之供給位置SP而分別地供給處理液。詳細內容將於後述，但於供給位置SP與各噴出管7之間且處理槽1之底面，配置有一對液流分散構件8。 The processing tank 1 stores a processing liquid, stores a plurality of substrates W in a parallel arrangement, and processes the plurality of substrates W at the same time. Processing tank 1 in the substrate row The cross-section in the row direction (FIG. 1) has a shape in which the bottom center becomes a trough, and is provided with a pair of discharge pipes 7 for supplying one of the treatment liquids. The pair of ejection pipes 7 are arranged on the bottom side of the processing tank 1 and on the lateral side portions of the substrate W in the left-right direction. The pair of discharge pipes 7 respectively supplies the processing liquid toward the supply position SP located closer to the discharge pipe 7 side than the central portion of the processing tank 1. The details will be described later, but a pair of liquid flow dispersing members 8 are arranged between the supply position SP and each discharge pipe 7 and the bottom surface of the processing tank 1.
於處理槽1之上緣之周圍，配置有溢流槽3。溢流槽3回收越過處理槽1之上緣而溢出之處理液。溢流槽3係藉由處理槽1之一對噴出管7與循環配管9被連通連接。循環配管9自溢流槽3側朝向處理槽1側，具備有泵11、循環管路用加熱器(inline heater)13、及過濾器15。泵11將貯存於溢流槽3之處理液吸入循環配管9，並將處理液朝向噴出管7側加壓傳送。循環管路用加熱器13將流通於循環配管9之處理液調溫至處理溫度。例如，在處理液包含對被覆於基板W之氮化膜(SiN)進行蝕刻之磷酸之情形時，處理溫度例如約為160℃。過濾器15將流通於循環配管9之處理液所包含之微粒過濾而加以去除。 An overflow tank 3 is arranged around the upper edge of the processing tank 1. The overflow tank 3 recovers the processing liquid which overflowed over the upper edge of the processing tank 1. The overflow tank 3 is connected to the discharge pipe 7 and the circulation pipe 9 through a pair of the processing tanks 1. The circulation pipe 9 faces the treatment tank 1 from the overflow tank 3 side, and includes a pump 11, an inline heater 13 for a circulation line, and a filter 15. The pump 11 sucks the processing liquid stored in the overflow tank 3 into the circulation pipe 9 and pressurizes the processing liquid toward the discharge pipe 7 side. The circulation pipe heater 13 adjusts the temperature of the processing liquid flowing through the circulation pipe 9 to the processing temperature. For example, when the processing liquid includes phosphoric acid that etches a nitride film (SiN) coated on the substrate W, the processing temperature is, for example, about 160 ° C. The filter 15 filters and removes particles contained in the processing liquid flowing through the circulation pipe 9.
供給管17係沿著處理槽1之內壁延伸，且一端側之開口部朝向處理槽1之底面被配置。供給管17其另一端側係連通連接於處理液供給源19。於供給管17設置有開閉閥21。開閉閥21對自處理液供給源19朝向供給管17之處理液之流通進行控制。處理液供給源19貯存處理液，並藉由使開閉閥21開放而將常溫之處理液朝向供給管17進行供給。 The supply pipe 17 extends along the inner wall of the processing tank 1, and an opening portion on one end side is disposed toward the bottom surface of the processing tank 1. The other end of the supply pipe 17 is connected to the processing liquid supply source 19 in a continuous manner. An on-off valve 21 is provided in the supply pipe 17. The on-off valve 21 controls the flow of the processing liquid from the processing liquid supply source 19 toward the supply pipe 17. The processing liquid supply source 19 stores the processing liquid, and opens the on-off valve 21 to supply the processing liquid at normal temperature toward the supply pipe 17.
升降機5遍及相當於處理槽1內部之「處理位置」(圖1所示之位置)與相當於處理槽1上方之「待機位置」(未圖示)之間 進行升降移動。升降機5具有背板23、中央部保持部25、及一對側部保持部27。背板23係沿著處理槽1之內壁之板狀的構件。中央部保持部25與一對側部保持部27係朝水平方向(進出紙面之方向)延伸地被設置於背板23之下部，而以平行地排列之狀態保持複數片基板W。中央部保持部25抵接立起姿勢之基板W之下緣中央部而加以保持。一對側部保持部27抵接立起姿勢之基板W之左右側之下緣而加以保持。 The lift 5 extends between the "processing position" (the position shown in Fig. 1) corresponding to the inside of the processing tank 1 and the "standby position" (not shown) corresponding to the top of the processing tank 1. Move up and down. The elevator 5 includes a back plate 23, a central portion holding portion 25, and a pair of side portion holding portions 27. The back plate 23 is a plate-like member along the inner wall of the processing tank 1. The central portion holding portion 25 and the pair of side portion holding portions 27 are provided in the lower portion of the back plate 23 so as to extend in the horizontal direction (the direction of entering and exiting the paper surface) and hold a plurality of substrates W in a parallel arrangement. The central portion holding portion 25 abuts against the central portion of the lower edge of the substrate W in the standing posture and holds it. The pair of side-portion holding portions 27 are held in contact with the lower edges of the left and right sides of the substrate W in the standing position.
控制部29內置有未圖示之CPU(中央處理單元)與記憶體。控制部29統括地升降機5之升降動作、泵11之開啟關閉動作、循環管路用加熱器13之調溫動作、開閉閥21之開閉動作等進行控制。 The control unit 29 includes a CPU (Central Processing Unit) and a memory (not shown). The control unit 29 controls the lifting operation of the floor elevator 5, the opening and closing operation of the pump 11, the temperature adjustment operation of the circulation line heater 13, and the opening and closing operation of the on-off valve 21.
此處，參照圖2~圖4，對液流分散構件8詳細地進行說明。再者，圖2係顯示液流分散構件之圖，圖3係安裝機構之俯視圖，圖4係將安裝機構之正面之一部分放大之圖。 Here, the liquid flow dispersing member 8 will be described in detail with reference to FIGS. 2 to 4. Furthermore, FIG. 2 is a diagram showing a liquid flow dispersing member, FIG. 3 is a plan view of the mounting mechanism, and FIG. 4 is an enlarged view of a part of the front surface of the mounting mechanism.
液流分散構件8係由基板W之面方向之縱剖面呈圓形形狀之圓柱所構成，且長軸朝向進出紙面之方向(基板W被排列之排列方向)被配置。液流分散構件8係配置於來自噴出管7之處理液之供給位置SP與側部保持部27之間。又，液流分散構件8係於側視時，隔開間隙GP地被配置於處理槽1之底面與液流分散構件8之下表面之間。液流分散構件8例如為石英製，且如圖3及圖4所示般，藉由安裝機構31被安裝於處理槽1之底部。 The liquid flow dispersing member 8 is constituted by a circular column having a vertical cross section in the plane direction of the substrate W, and the major axis is arranged in the direction of entering and exiting the paper surface (the direction in which the substrates W are arranged). The liquid flow dispersing member 8 is disposed between the supply position SP of the processing liquid from the discharge pipe 7 and the side holding portion 27. In addition, the liquid flow dispersing member 8 is disposed between the bottom surface of the processing tank 1 and the lower surface of the liquid flow dispersing member 8 with a gap GP in a side view. The liquid flow dispersing member 8 is made of, for example, quartz, and is mounted on the bottom of the processing tank 1 by a mounting mechanism 31 as shown in FIGS. 3 and 4.
再者，前述之間隙GP之適當值，會因例如處理槽1之大小、液流分散構件8之直徑或構造、液流分散構件8被配置之位置等而不同。此處，例如於液流分散構件8之直徑為22mm、處 理槽1之寬度為約300mm、液流分散構件8之配置位置為距處理槽1之中心50~100mm之情形時，間隙GP較佳為約1.5mm左右。 The appropriate value of the aforementioned gap GP varies depending on, for example, the size of the processing tank 1, the diameter or structure of the liquid flow dispersing member 8, the position where the liquid flow dispersing member 8 is arranged, and the like. Here, for example, the diameter of the liquid flow dispersing member 8 is 22 mm. When the width of the arranging tank 1 is about 300 mm and the arrangement position of the liquid flow dispersing member 8 is 50 to 100 mm from the center of the processing tank 1, the gap GP is preferably about 1.5 mm.
安裝機構31係由氟樹脂所構成，具備有端部構件33、支撐構件35、及連結管37。端部構件33具備有被嵌合於噴出管7之兩端部中之外周面之一部位的嵌合部39。由於噴出管7係配置於處理槽1之底部側且基板W之排列之左右方向之側面部，因此端部構件33係安裝於處理槽1中基板W之排列方向左右側之側面之底部且基板W排列方向之兩端側而配置。又，在圖1、圖4之剖視時，端部構件33形成有朝處理槽1之底面之中央部側(谷側)突出之連結部41。支撐構件35係呈沿著處理槽1之底面形狀之形狀，而在基板W排列方向之兩端側底部被配置於基板W排列方向之左右之端部構件33之間，而將兩根液流分散構件8固定在側面而加以支撐。又，支撐構件35形成有朝向噴出管7側突出之連結部43。端部構件33與支撐構件35係在使各自之連結部41、43分開而對向之狀態下，藉由將連結管37插通於連結部41、43而被相互地連結。連結管37係由即便為氟樹脂亦具有柔軟性之材料，例如PFA(四氟乙烯．全氟烷氧基乙烯基醚共聚物；perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer)所製作，而端部構件33與支撐構件35係由硬質之材料，例如PTFE(聚四氟乙烯；polytetra-fluoro ethylene)所製作。藉由該等構造，液流分散構件8係相對於處理槽1可容易地裝卸自如地被安裝，而可容易地進行液流分散構件8之更換或清掃等之維護。 The mounting mechanism 31 is made of a fluororesin, and includes an end member 33, a support member 35, and a connection pipe 37. The end member 33 includes a fitting portion 39 that is fitted to one of the outer peripheral surfaces of both end portions of the discharge pipe 7. Since the ejection tube 7 is disposed on the bottom side of the processing tank 1 and on the lateral sides of the substrate W in the left-right direction, the end member 33 is mounted on the bottom of the processing tank 1 on the bottom of the lateral sides of the substrate W in the alignment direction and the substrate. They are arranged at both end sides in the W alignment direction. In the cross-sections of FIGS. 1 and 4, the end member 33 is formed with a connecting portion 41 protruding toward the central portion side (valley side) of the bottom surface of the processing tank 1. The supporting member 35 has a shape that follows the shape of the bottom surface of the processing tank 1, and the bottoms on both ends of the substrate W are arranged between the end members 33 on the left and right of the substrate W in the array direction, and two liquid flows The dispersion member 8 is fixed to the side and supported. In addition, the supporting member 35 is formed with a connecting portion 43 protruding toward the discharge pipe 7 side. The end member 33 and the support member 35 are connected to each other by inserting the connection pipe 37 into the connection portions 41 and 43 in a state where the respective connection portions 41 and 43 are opposed to each other. The connecting pipe 37 is made of a material having flexibility even if it is a fluororesin, such as PFA (tetrafluoroethylene. Perfluoroalkoxy vinyl ether copolymer; perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer), and The end member 33 and the support member 35 are made of a hard material such as PTFE (polytetra-fluoroethylene). With these structures, the liquid flow dispersing member 8 can be easily attached to and detached from the processing tank 1, and maintenance such as replacement or cleaning of the liquid flow dispersing member 8 can be easily performed.
若處理液為高溫，則氟樹脂製之安裝機構31雖會膨脹，但由於連結管37係在使端部構件33之連結部41與支撐構件 35之連結部43分開而對向之狀態下被插通，因此可吸收因各部分之熱膨脹所導致之尺寸變動量。所以，可穩定地將支撐構件35安裝於處理槽1，同時可防止處理槽1因安裝機構31之膨脹而破損之情形。 If the processing liquid is at a high temperature, the mounting mechanism 31 made of fluororesin will swell, but the connecting pipe 37 is connected between the connecting portion 41 of the end member 33 and the supporting member. The connecting portion 43 of 35 is inserted in a state of being separated and facing, so it can absorb the amount of dimensional change caused by the thermal expansion of each part. Therefore, the support member 35 can be stably mounted on the processing tank 1, and at the same time, the processing tank 1 can be prevented from being damaged due to the expansion of the mounting mechanism 31.
如圖2所示，根據本實施例，自噴出管7朝向供給位置SP所供給之處理液之液流TL，係藉由液流分散構件8而主要地被分散為朝向處理槽1之中央之底面側的液流TL1、及朝向處理槽1之中央之往斜上方的液流TL2(換言之，自斜下方合流於液流TL1之液流TL2)等兩者。因此，由於可使較強之液流分散為在處理槽1之中央部上升之處理液的液流TL1、與自斜下方合流於該液流TL1之液流TL2，所以該液流TL1與TL2在基板W面之中央部上成為較廣之寬度而上升。其結果，因為可緩和基板W面附近之處理液之液流的差異緩和，因此可提升處理之面內均勻性。 As shown in FIG. 2, according to this embodiment, the liquid flow TL of the processing liquid supplied from the discharge pipe 7 toward the supply position SP is mainly dispersed toward the center of the processing tank 1 by the liquid flow dispersing member 8. The bottom side liquid flow TL1, and the liquid flow TL2 facing obliquely upward toward the center of the processing tank 1 (in other words, the liquid flow TL2 which merges from the obliquely downward direction to the liquid flow TL1) and the like. Therefore, since the stronger liquid flow can be dispersed into the liquid flow TL1 of the processing liquid rising at the central portion of the processing tank 1, and the liquid flow TL2 merged with the liquid flow TL1 from the obliquely downward direction, the liquid flows TL1 and TL2 The central portion of the substrate W surface rises to a wider width. As a result, since the difference in the liquid flow of the processing liquid near the W surface of the substrate can be eased, the in-plane uniformity of the processing can be improved.
其次，參照圖5~圖16之模擬結果，對前述之液流分散構件8之功效進行說明。 Next, the effects of the aforementioned liquid flow dispersing member 8 will be described with reference to the simulation results of FIGS. 5 to 16.
再者，圖5係顯示不具有液流分散構件之情形時之液流之示意圖。又，圖6係顯示將液流分散構件配置於距中心50mm之情形時之液流之示意圖，圖7係顯示將液流分散構件配置於距中心60mm之情形時之液流之示意圖，圖8係顯示將液流分散構件配置於距中心70mm之情形時之液流之示意圖，圖9係顯示將液流分散構件配置於距中心80mm之情形時之液流之示意圖，圖10係顯示將液流分散構件配置於距中心90mm之情形時之液流之示意圖，圖11係顯示將液流分散構件配置於距中心100mm之情形時之液流之示意圖，圖12係顯示將液流分散構件配置於距中心110mm之情 形時之液流之示意圖，圖13係顯示將液流分散構件配置於距中心100mm，且將與底面之間隙設為2.5mm之情形時之液流之示意圖，圖14係顯示將液流分散構件配置於距中心100mm，且將液流分散構件之直徑設為30mm之情形時之液流之示意圖，圖15係顯示將液流分散構件配置於距中心100mm，且將液流分散構件之直徑設為26mm之情形時之液流之示意圖，圖16係顯示將液流分散構件配置於距中心100mm，且將液流分散構件之直徑設為18mm之情形時之液流之示意圖。該等之模擬之來自噴出管7之處理液之流量係設為每分鐘40公升，而供給位置SP係設為距中心45mm附近。 Moreover, FIG. 5 is a schematic diagram showing a liquid flow in a case where no liquid flow dispersing member is provided. 6 is a schematic diagram showing the flow when the liquid flow dispersing member is disposed at a distance of 50 mm from the center, and FIG. 7 is a schematic diagram showing the flow when the liquid flow dispersing member is disposed at a distance of 60 mm from the center, FIG. 8 Fig. 9 is a schematic diagram showing the liquid flow when the liquid flow dispersing member is arranged at a distance of 70 mm from the center. Fig. 9 is a schematic diagram showing the liquid flow when the liquid flow dispersing member is arranged at a distance of 80 mm from the center. A schematic diagram of the liquid flow when the flow dispersing member is arranged at a distance of 90 mm from the center. FIG. 11 is a schematic diagram of a liquid flow when the flow dispersing member is arranged at a distance of 100 mm from the center. FIG. 12 is a schematic view of the liquid dispersing member. At 110mm from the center Fig. 13 is a schematic view of the liquid flow when the liquid flow dispersing member is arranged at a distance of 100 mm from the center and the gap between the bottom surface and the bottom surface is set to 2.5 mm. Fig. 14 shows the liquid flow being dispersed. The schematic diagram of the liquid flow when the member is arranged at a distance of 100 mm from the center and the diameter of the liquid flow dispersing member is set to 30 mm. FIG. 15 shows the diameter of the liquid flow dispersing member when the liquid dispersing member is disposed at a distance of 100 mm from the center. FIG. 16 is a schematic view of the liquid flow when the liquid flow dispersing member is disposed at a distance of 100 mm from the center when the liquid flow dispersing member is set at 26 mm, and FIG. 16 is a schematic view of the liquid flow when the liquid dispersing member is set at 18 mm. In these simulations, the flow rate of the treatment liquid from the ejection pipe 7 is set to 40 liters per minute, and the supply position SP is set to be approximately 45 mm from the center.
圖5係不具備液流分散構件8之處理槽1，此處係作為基準(習知例)者。由該圖5可明確得知，自噴出管7所供給之處理液係呈縱線狀地產生在處理槽1中央上升之流速較快之區域HVR、及自該區域HVR朝側向離開之流速較慢之區域LVR。亦即，基板W面附近之液流，流速係在自左右所供給之處理液上升之基板W面之中央部的狹窄範圍內變得最快，而與流速較慢處產生較大的差異。再者，圖中之符號WD係顯示在基板W面之中央部之流速較快之上升流的寬度，於該情形時，可知為相對較狹窄之上升流的寬度WD。 FIG. 5 shows the processing tank 1 without the liquid flow dispersing member 8. Here, it is a reference (known example). From FIG. 5, it is clear that the processing liquid supplied from the ejection pipe 7 generates a region HVR with a relatively rapid flow rate rising in the center of the processing tank 1 in a vertical line, and a flow velocity leaving the region HVR sideways from the region. Slower area LVR. That is, the flow velocity of the liquid flow near the substrate W surface becomes the fastest within a narrow range of the central portion of the substrate W surface that rises from the processing liquid supplied from the left and right, and there is a large difference from the slower flow velocity. In addition, the symbol WD in the figure indicates the width of the upflow with a relatively fast flow velocity in the central portion of the W surface of the substrate. In this case, it can be seen that the width of the upflow is relatively narrow WD.
圖6係顯示設為液流分散構件8之直徑：22mm、設置位置：距中心50mm、間隙GP：1.5mm之情形，圖7係顯示僅將其中之設置位置設為距中心60mm者，圖8係顯示僅將其中之設置位置設為距中心70mm者，圖9係顯示僅將其中之設置位置設為距中心80mm者，圖10係顯示僅將其中之設置位置設為距中心90mm者，圖11係顯示僅將其中之設置位置設為距中心100mm者，而圖 12係顯示僅將其中之設置位置設為距中心110mm者。 Fig. 6 shows the case where the diameter of the liquid flow dispersing member 8 is 22 mm, the installation position is 50 mm from the center, and the gap GP is 1.5 mm. Fig. 7 shows the case where only the setting position is set to 60 mm from the center. The display shows only the setting position of which is set to 70mm from the center, FIG. 9 shows the setting position of which is only set to 80mm from the center, and the FIG. 10 shows the setting position of which is only set to 90mm from the center. 11 series display only set the setting position to 100mm from the center. In the 12-series display, only the setting position is set to 110mm from the center.
自前述之例中，可判斷圖6至圖12之情形係相較於圖5，上升流之寬度WD較廣而具有優勢者。然而，圖12朝向基板W上方通過之上升流較弱，就此面向可判斷為不適合。再者，雖省略圖示，但若使設置位置較距中心45mm更接近中心側，上升流之寬度WD便與圖5不存在差異，而不被認定為具有優勢。根據該等結果可知，液流分散構件8之設置位置，較佳在供給位置SP與側部保持部27之間。 From the foregoing example, it can be judged that the situations of FIGS. 6 to 12 are compared with FIG. 5, and the width WD of the upwelling is wider and has the advantage. However, the upward current passing through the substrate W in FIG. 12 is relatively weak, and it may be judged that this direction is not suitable. In addition, although illustration is omitted, if the installation position is closer to the center side than 45 mm from the center, the width WD of the upwelling does not differ from that in FIG. 5 and is not considered to be advantageous. From these results, it is understood that the installation position of the liquid flow dispersing member 8 is preferably between the supply position SP and the side holding portion 27.
若在較供給位置SP更靠處理槽1之中心側而較噴出管7更遠之位置配置液流分散構件8，則由於在供給位置SP，處理液就已分散為某種程度，因此使上升流之寬度WD擴散之效果會變低。另一方面，若在包含側部保持部27之位置之靠近噴出管7之位置配置液流分散構件8，由於處理液會被液流分散構件8與側部保持部27所遮斷，因此處理液之液流會變得非常差。 If the liquid flow dispersing member 8 is disposed closer to the center of the processing tank 1 than the supply position SP and further away from the discharge pipe 7, the processing liquid is dispersed to some extent at the supply position SP, so that the liquid flow is raised. The effect of the WD diffusion of the width of the stream becomes lower. On the other hand, if the liquid flow dispersing member 8 is disposed near the discharge pipe 7 at a position including the side holding portion 27, the processing liquid is blocked by the liquid flow dispersing member 8 and the side holding portion 27. The liquid flow becomes very poor.
圖13係顯示設為液流分散構件8之直徑：22mm、設置位置：距中心100mm、間隙GP：2.5mm之情形。相較於圖11之情形，間隙GP不同。 FIG. 13 shows a case where the diameter of the liquid flow dispersing member 8 is 22 mm, the installation position is 100 mm from the center, and the gap GP is 2.5 mm. Compared to the case of FIG. 11, the gap GP is different.
由於液流分散構件8若密貼於處理槽1之底面，沿著底面之液流會被阻斷，因此可得知並不適當。然而，若根據圖11和圖13之比較，可知若間隙GP過大，沿著處理槽1之底面之液流便會維持在較強之狀態，因此可知不大能將上升流之寬度WD擴展。因此，可知距處理槽1之底面之間隙GP亦為重要之參數。 Since the liquid flow dispersing member 8 is closely adhered to the bottom surface of the processing tank 1, the liquid flow along the bottom surface is blocked, and it can be seen that this is not appropriate. However, according to the comparison between FIG. 11 and FIG. 13, it can be seen that if the gap GP is too large, the liquid flow along the bottom surface of the processing tank 1 will be maintained in a strong state, so it can be seen that the width WD of the upward flow cannot be extended. Therefore, it can be seen that the gap GP from the bottom surface of the processing tank 1 is also an important parameter.
圖14係顯示設為液流分散構件8之直徑：30mm、設置位置：距中心100mm、間隙GP：1.5mm之情形，圖15係顯示僅 將其中之液流分散構件8之直徑設為26mm者，圖16係顯示僅將其中之液流分散構件8之直徑設為18mm者。該等相較於圖11之情形，液流分散構件8之直徑不同。 FIG. 14 shows a case where the diameter of the liquid flow dispersing member 8 is 30 mm, the installation position is 100 mm from the center, and the gap GP is 1.5 mm. FIG. 15 shows only Where the diameter of the liquid flow dispersing member 8 is set to 26 mm, FIG. 16 shows that only the diameter of the liquid flow dispersing member 8 is set to 18 mm. These have different diameters of the liquid flow dispersing member 8 compared to the case of FIG. 11.
若將圖11與圖14至圖16，進行比較可知液流分散構件8之大小亦為重要之參數。亦即，由於朝向斜上方之液流會根據與側部保持部27之關係，而大幅地變化，因此會對上升流之寬度WD造成影響。 Comparing FIG. 11 with FIGS. 14 to 16, it can be seen that the size of the liquid flow dispersing member 8 is also an important parameter. That is, the liquid flow that is directed obliquely upward changes greatly depending on the relationship with the side-portion holding portion 27, and therefore affects the width WD of the upward flow.
本發明並不限定於上述實施形態，可如下述般變形實施。 The present invention is not limited to the above-mentioned embodiments, and may be modified as described below.
(1)在前述之實施例中，雖以縱剖面形狀為圓形形狀之圓柱之情形為例對液流分散構件8進行說明，但本發明之液流分散構件8並不限於該種形狀。 (1) In the foregoing embodiment, the liquid flow dispersing member 8 is described by taking a case where the vertical cross-sectional shape is a circular cylinder, but the liquid flow dispersing member 8 of the present invention is not limited to this shape.
例如，亦可為如圖17及圖18般之液流分散構件8。再者，圖17係顯示液流分散構件之第1變形例之圖，圖18係顯示液流分散構件之第2變形例之圖。 For example, the liquid flow dispersing member 8 as shown in Figs. 17 and 18 may be used. 17 is a diagram showing a first modified example of the liquid flow dispersing member, and FIG. 18 is a diagram showing a second modified example of the liquid flow dispersing member.
液流分散構件8A係如圖17所示，縱剖面呈三角形狀。液流分散構件8A中之一個頂點，係朝向噴出管7。即便為如此之液流分散構件8A，亦能使自噴出管7所供給之處理液朝向兩個方向分散，並且可藉由三角形之邊的角度而容易地控制液流之方向。 The liquid flow dispersing member 8A is shown in FIG. 17 and has a triangular shape in the longitudinal section. One vertex of the liquid flow dispersing member 8A is directed toward the discharge pipe 7. Even with such a liquid flow dispersing member 8A, the processing liquid supplied from the discharge pipe 7 can be dispersed in two directions, and the direction of the liquid flow can be easily controlled by the angle of the sides of the triangle.
液流分散構件8B係如圖18所示，縱剖面呈L字狀。液流分散構件8B之頂部係朝向噴出管7。即便為如此之液流分散構件8B，亦能發揮與上述相同之效果。 The liquid flow dispersing member 8B is an L-shaped longitudinal section as shown in FIG. 18. The top of the liquid flow dispersing member 8B faces the discharge pipe 7. Even with such a liquid flow dispersing member 8B, the same effects as described above can be exhibited.
(2)在前述之實施例中，雖然液流分散構件8由前述 之構成之安裝機構31所安裝，但本發明並不限定於如此之藉由安裝機構31來安裝液流分散構件8者。例如，亦可構成為將液流分散構件8直接安裝於處理槽1之內壁。 (2) In the foregoing embodiment, although the liquid flow dispersing member 8 is constituted by the foregoing The mounting mechanism 31 is configured to be mounted, but the present invention is not limited to those in which the liquid flow dispersing member 8 is mounted by the mounting mechanism 31. For example, the liquid flow dispersing member 8 may be directly attached to the inner wall of the processing tank 1.
(3)在前述之實施例中，雖然以將作為處理液而包含磷酸者作為一例來進行說明，但本發明並不限定於處理液為包含磷酸者。處理液亦可為例如硫酸．過氧化氫水之混合液等。 (3) In the above-mentioned embodiment, although the case where a phosphoric acid is contained as a processing liquid is mentioned as an example, this invention is not limited to a person containing a phosphoric acid in a processing liquid. The treatment liquid may be, for example, sulfuric acid. Mixture of hydrogen peroxide and water.
(4)在前述之實施例中，處理槽1之周圍雖具備有溢流槽3，但本發明並不限定於如此之形態。亦可為例如具備有包圍處理槽1之腔室，而將自處理槽1溢出之處理液在腔室之底部進行回收之構成。 (4) In the aforementioned embodiment, although the overflow tank 3 is provided around the processing tank 1, the present invention is not limited to such a form. For example, a configuration may be provided in which a chamber surrounding the processing tank 1 is provided, and the processing liquid overflowing from the processing tank 1 is recovered at the bottom of the chamber.
(5)在前述之實施例中，雖然液流分散構件8係朝沿著處理槽1之底面之方向而設置，但亦可為例如自處理槽1之底面朝鉛垂方向立起而設置。於該情形時，可設置在被保持於升降機5之複數片基板W之排列之側向，亦即圖1中升降機5之左右側之位置。在圖1之深度方向上，較佳為設置於複數片基板W之間的位置。 (5) In the foregoing embodiment, although the liquid flow dispersing member 8 is provided in a direction along the bottom surface of the processing tank 1, it may be provided in a vertical direction from the bottom surface of the processing tank 1, for example. In this case, it can be set at the side of the arrangement of the plurality of substrates W held on the elevator 5, that is, the positions on the left and right sides of the elevator 5 in FIG. 1. In the depth direction of FIG. 1, it is preferably provided at a position between the plurality of substrates W.
(6)為了進一步提升面內均勻性，除了前述之實施例以外，可進一步附加攪拌處理槽1之上部之處理液、或使液流均勻化之構成。亦可為，例如在被保持於升降機5之複數片基板W之排列之側向，即圖1中升降機5之左右側之位置，將液流分散構件朝基板W之排列方向設置於基板W之上方，而使液流均勻化。或者，亦可設置將處理液朝向處理槽1之上部呈簇射狀地供給之噴嘴，而促進處理槽1上部之處理液之攪拌。 (6) In order to further improve the in-plane uniformity, in addition to the foregoing embodiments, a treatment liquid for stirring the upper portion of the treatment tank 1 or a structure for making the liquid flow uniform may be further added. For example, the liquid flow dispersing member may be arranged on the substrate W in the direction in which the plurality of substrates W held on the elevator 5 are arranged, that is, on the left and right sides of the elevator 5 in FIG. 1. Up, so that the flow is uniform. Alternatively, a nozzle may be provided to supply the processing liquid in a shower pattern toward the upper portion of the processing tank 1 to promote stirring of the processing liquid at the upper portion of the processing tank 1.
如上所述，本發明適用於藉由處理液來進行處理之基板處理裝置。 As described above, the present invention is applicable to a substrate processing apparatus that performs processing using a processing liquid.
1‧‧‧處理槽 1‧‧‧ treatment tank
3‧‧‧溢流槽 3‧‧‧ overflow tank
5‧‧‧升降機 5‧‧‧ lift
7‧‧‧噴出管 7‧‧‧ spout tube
8‧‧‧液流分散構件 8‧‧‧ liquid flow dispersion member
9‧‧‧循環配管 9‧‧‧Circular piping
11‧‧‧泵 11‧‧‧Pump
13‧‧‧循環管路用加熱器 13‧‧‧Circuit line heater
15‧‧‧過濾器 15‧‧‧ Filter
17‧‧‧供給管 17‧‧‧ supply pipe
19‧‧‧處理液供給源 19‧‧‧ Treatment liquid supply source
21‧‧‧開閉閥 21‧‧‧ On-off valve
23‧‧‧背板 23‧‧‧ back plate
25‧‧‧中央部保持部 25‧‧‧ Central Department Holding Department
27‧‧‧側部保持部 27‧‧‧side holding section
29‧‧‧控制部 29‧‧‧Control Department
SP‧‧‧供給位置 SP‧‧‧ Supply location
W‧‧‧基板 W‧‧‧ substrate
Claims (7)
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| JP2016-006971 | 2016-01-18 |
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| TW201727733A TW201727733A (en) | 2017-08-01 |
| TWI619161B true TWI619161B (en) | 2018-03-21 |
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| KR (1) | KR102126143B1 (en) |
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| JPH09171987A (en) * | 1995-12-18 | 1997-06-30 | Dainippon Screen Mfg Co Ltd | Substrate treatment system |
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| JP4916382B2 (en) | 2007-05-18 | 2012-04-11 | 株式会社ジェイ・イー・ティ | Substrate processing method and substrate processing apparatus |
| JP5179282B2 (en) * | 2007-09-27 | 2013-04-10 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
| JP2009141022A (en) * | 2007-12-04 | 2009-06-25 | Tokyo Electron Ltd | Substrate processing apparatus |
| JP2009231669A (en) * | 2008-03-25 | 2009-10-08 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
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| TWM277765U (en) * | 2005-04-11 | 2005-10-11 | Bi-Jen Chen | Improvement of mounting of water draining flange on floor |
| TW200822207A (en) * | 2006-07-25 | 2008-05-16 | Dainippon Screen Mfg | Substrate processing apparatus and substrate processing method |
| TW200924044A (en) * | 2007-09-26 | 2009-06-01 | Dainippon Screen Mfg | Apparatus for and method of processing substrate |
| TW201250902A (en) * | 2011-03-25 | 2012-12-16 | Dainippon Screen Mfg | Substrate treatment apparatus and substrate treatment method |
| TW201324656A (en) * | 2011-08-25 | 2013-06-16 | Dainippon Screen Mfg | Substrate treating apparatus |
| TW201335989A (en) * | 2011-12-28 | 2013-09-01 | Dainippon Screen Mfg | Substrate processing apparatus and substrate processing method |
| TW201340232A (en) * | 2012-01-27 | 2013-10-01 | Dainippon Screen Mfg | Substrate processing apparatus and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017126178A1 (en) | 2017-07-27 |
| KR102126143B1 (en) | 2020-06-23 |
| CN108475628A (en) | 2018-08-31 |
| TW201727733A (en) | 2017-08-01 |
| KR20180086499A (en) | 2018-07-31 |
| CN108475628B (en) | 2022-10-14 |
| JP2017130483A (en) | 2017-07-27 |
| JP6617036B2 (en) | 2019-12-04 |
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