TWI616943B - 作爲切割膠帶黏著劑之晶圓背部塗層 - Google Patents

作爲切割膠帶黏著劑之晶圓背部塗層 Download PDF

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TWI616943B
TWI616943B TW103102785A TW103102785A TWI616943B TW I616943 B TWI616943 B TW I616943B TW 103102785 A TW103102785 A TW 103102785A TW 103102785 A TW103102785 A TW 103102785A TW I616943 B TWI616943 B TW I616943B
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wafer
dicing tape
adhesive
coating
bare
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嘉尼卓 達特
伊麗莎貝斯 洪
史帝芬 魯塔
卓綺茁
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漢高智慧財產控股公司
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Abstract

本發明係關於一種半導體組合件，其包括半導體晶圓、配置於該晶圓背部之黏著劑塗層、及較佳而言透UV輻射的裸切割膠帶。該組合件係藉由包括以下步驟的方法來製造：(a)提供半導體晶圓，(b)在該半導體晶圓上配置晶圓背部塗層，(c)使該晶圓背部塗層部分固化至其黏著至該晶圓背部並保持膠黏的程度，及(d)視需要利用熱及壓力使該裸切割膠帶接觸至該部分固化及膠黏的晶圓背部塗層。

Description

作為切割膠帶黏著劑之晶圓背部塗層
本發明係關於應用至半導體晶圓之背部之晶粒附著黏著劑於將切割膠帶黏著至該晶圓之用途。該切割膠帶在將該晶圓切單成個別半導體晶粒之切割操作期間支撐該半導體。
在一種製造半導體晶粒之習知方法中，加工半導體以在晶圓之頂部上形成複數個電路，及在後期的步驟中，沿規定的切割線將晶圓分離成個別晶粒。個別晶粒係藉由施加在晶粒背部與基板之間之黏著劑而附著至其所選的基板。該黏著劑係稱作晶粒附著黏著劑。
與將晶粒附著黏著劑施加至個別晶粒相比，在切割之前將黏著劑施加至晶圓背部係更有效。塗佈於半導體晶圓之上之該晶粒附著黏著劑係稱作晶圓背部塗層。
為了在切割操作期間支撐經背部塗層塗佈之半導體晶圓，將稱作切割膠帶之支撐膠帶黏著至晶圓之背部塗層。塗佈後，晶圓背部黏著劑經歷B-階段，亦即部分固化成較不膠黏的狀態。切割膠帶一般包括至少兩層，一層為載體帶及另一層為用於接觸及黏著至背部塗層之黏著膜。
在切割操作期間，切割刀片以每分鐘上萬轉的速度移動，沿切割線產生局部的高溫。該較高溫度導致膠黏晶圓背部塗層軟化並與切割膠帶黏著劑混合，從而潛在地降低晶圓背部塗層作為晶粒附著黏著劑之可靠性。
本發明為一種切割膠帶與背部經晶粒附著黏著劑塗佈之半導體晶圓的組合件的改良。
本發明為一種包括呈該順序之半導體晶圓、配置於該晶圓背部之上的黏著劑塗層及裸切割膠帶(亦稱作載體膠帶)的半導體組合件。在一個較佳實施例中，該裸切割膠帶為透UV輻射。
就本說明書及技術方案之目的而言，該晶圓背部為具有電路一側之相對側；該晶圓背部塗層為施加至該晶圓背部之晶粒附著黏著劑；及該裸切割膠帶為用於在切割操作期間支撐該晶圓及未經任何預施加之黏著劑塗佈的切割支撐膠帶。
在另一實施例中，本發明為一種製造具有半導體晶圓、晶圓背部塗層及裸切割膠帶的該組合件的方法，該方法包括(a)提供半導體晶圓，(b)在該半導體晶圓上配置晶圓背部塗層，(c)使該晶圓背部塗層部分固化至其黏著至該晶圓背部及保持膠黏的程度，及(d)視需要利用熱及壓力使該裸切割膠帶接觸至該部分固化及膠黏的晶圓背部塗層。
半導體晶圓根據已知方法係自半導體材料(一般為矽、砷化鎵、鍺或類似的化合物半導體材料)製造，以在一個表面上包含電子電路。
晶圓背部塗層一般為晶粒附著黏著劑，及可為適合用於該目的之任何黏著劑。該等黏著劑係可購得，諸如產品WBC8901UV及WBC8988UV，其均為獲自Henkel Electronic Materials,LLC之環氧/丙烯酸系組合物。
適合用於在切割操作期間支撐半導體晶圓之切割膠帶係由聚烯烴組成及可購得，如(諸如)來自Denka之產品UP8010W1及來自Furukawa之產品UC3010110P及UC3004M80P。該等膠帶為UV透射。亦可利用聚酯膠帶，但其可延展性通常不如聚烯烴膠帶，及因此不易用作切割支撐膠帶。
為製造具有半導體晶圓、晶圓背部塗層及裸切割膠帶的半導體組合件，將晶圓背部塗層黏著劑沉積在該半導體晶圓之背部上，使該塗層部分固化，及接著將該切割膠帶層壓至該晶圓背部塗層。可藉由技術中已知的任何方式或方式的組合，諸如藉由旋塗、噴霧或噴射塗佈，或藉由印刷完成將該晶圓背部塗層沉積於該晶圓上。沉積後，接著將該晶圓背部塗層曝露至精確劑量的UV照射，以使該背部塗層部分固化至足以黏著至該半導體晶圓之背部及保留附著切割膠帶之膠黏性水平的程度。在熟習此項技術者的合理實驗下，可調節用於照射之處理條件(包括UV強度、時間、波長及脈衝頻率)，以控制該黏著水平以及塗層之膠黏性。一種評定膠黏性的方法描述於本說明書之實例部分中。
在B-階段照射之後，將裸切割膠帶(無任何黏著層)黏著至該晶圓背部塗層。在一些情形中，可能需要熱及壓力來達成充分的黏著。熟習此項技術者在合理實驗下可確定熱及壓力的量，或可由製造商規定。一種較佳的切割膠帶係由透射UV輻射的可延展聚烯烴或聚酯組成。該晶圓背部塗層在切割操作期間使晶圓充分黏著至切割膠帶，亦即，無任何切割晶片失去與切割膠帶之接觸。
切割後，使該晶圓背部塗層透過UV透射切割膠帶再次曝露至UV輻射，以降低該晶圓背部塗層之膠黏性。該膠黏性之降低使得可容易利用標準的拾放機器設備自切割膠帶移除包括晶圓背部塗層黏著劑之晶粒，及隨後轉移至所選基板。因為該切割膠帶未提供黏著層，因此 該晶圓背部塗層該晶圓比對該裸切割膠帶具有更高黏著性。
在另一實施例中，本發明為一種製造具有半導體晶圓、背部塗層及裸切割膠帶的組合件的方法，其包括(a)提供半導體晶圓，(b)在該半導體晶圓上配置晶圓背部塗層，(c)使該晶圓背部塗層部分固化至其黏著至晶圓背部及保持膠黏的程度，及(d)視需要利用熱及壓力使該裸切割膠帶接觸至該部分固化及膠黏的晶圓背部塗層。
該等實施例容許使用無任何黏著劑之裸切割膠帶，因此減少切割膠帶的成本及預防晶圓背部塗層受另一黏著劑汙染。
實例
自切割膠帶釋離晶圓背部塗層(WBC)
在以下實例中，B-階段黏著劑之膠黏性水平係藉由快速、客觀且可複驗性的指觸黏性測試來表徵，該測試與在物性分析儀(由TA Instruments製造)上之力測量具有良好相關性。其在此加以敘述。
藉由阻塞&填充法(利用50μm厚之膠帶)將約50μm厚之一層晶圓背部塗層材料配置於陶瓷片上及接著在氙氣燈下以~1000mJ/cm2之總劑量經歷B-階段。用手指(利用緊套之腈手套)以約100-150g之力按壓在B-階段黏著劑表面上達1秒及然後收回。根據以下評級系統評級膠黏性水平：
0：當移走手指時，未感覺黏連或阻力。
1：當移走手指時，未感覺黏連或阻力但在表面上可見幾乎不可見的手痕。
2：當移走手指時，未感覺黏連或阻力但在表面上留下清晰可見的印記。
3：當移走手指時，感覺輕微黏連或阻力但在表面上留下可見的印記。
4：當移走手指時，載玻片黏連至手套幾秒及在表面上留下可見 的印記。
5：載玻片黏連至手套直到將其挪離。當移走手指時，感覺到阻力及在表面上留下可見的印記。
實例1：釋離性能
針對待測試之樣品，使用兩種聚合物膜作為切割膠帶，一種為聚烯烴膜(PO)及另一種為聚酯(PE)膜。該聚烯烴膜為一種由日本Gunze Company供應、常用作用於標準切割膠帶之載體膠帶的可延展膜，及在一側提供標準電暈處理。聚酯膜為一種由韓國Toray Company供應、常用作用於與切割膠帶使用之黏著劑的保護性襯墊，及在一側提供聚矽氧塗層。
用於該等樣品之晶圓背部塗層黏著劑為Henkel Electronics Materials黏著劑WBC8901UV及以20μm厚塗佈於8個切薄至75um厚度的200mm裸矽晶圓上。在脈衝氙氣燈(來自Xenon Corp)下，照射4個晶圓上的塗層達45秒的持續時間，在相同的脈衝氙氣燈下，照射餘下的4個晶圓上的塗層達60秒的持續時間。45秒曝露對應於約675mJ/cm2之劑量及60秒曝露對應於約850mJ/cm2之劑量(如藉由來自EIT Inc,VA,USA之UV Power Puck Flash測量)。45秒曝露產生相當膠黏性(在指觸黏性測試中介於評級2與3之間)及60秒曝露產生不膠黏的塗層表面(在指觸黏性測試中介於評級0與1之間)。
將照射45秒之經晶圓背部塗層塗佈之4個晶圓中之2個層壓至聚烯烴膠帶片段之相對側；亦即，將1個晶圓層壓至膠帶片段之經電暈處理的一側，及將1個晶圓層壓至膠帶片段之未經處理的一側。同樣地將照射60秒之經晶圓背部塗層塗佈之4個晶圓中之2個層壓至聚烯烴膠帶片段之相對側；亦即，將1個晶圓層壓至膠帶片段之經電暈處理的一側，及將1個晶圓層壓至膠帶片段之未經處理的一側。
針對聚酯膠帶，利用4個剩餘的晶圓製造類似的樣品。亦即，將 其中照射晶圓背部塗層達45秒之2個晶圓中之1個晶圓層壓至經聚矽氧塗佈的一側，及將第二個晶圓層壓至未經塗佈的一側。同樣地，將照射晶圓背部塗層達60秒之2個晶圓中之1個晶圓層壓至經聚矽氧塗佈的一側，及將第二個晶圓層壓至未經塗佈的一側。
使用Western Magnum XRL-120輥式層壓機，在室溫下操作，以70.3g/cm2(20psi)壓力、60.96cm/min(2ft/分鐘)之速率完成層壓。
層壓後，在Disco半自動DFD670切割機中將該等晶圓切割成10mm x 16mm之晶粒大小。利用刀片HCDD & HCBB完成兩步驟切割。切割後，使經切割之層壓晶圓在UVEXS UV燈(365nm)下經歷500mJ/cm2之進一步UV照射(使切割膠帶側曝露至該燈)，以降低該晶圓背部塗層之膠黏性及容許自切割膠帶釋離。使用具有19-針射出器之Datacon APM 5000+資料結合機來自底部推動晶粒，同時使用具有均一分佈之真空洞的平筒夾來撿拾晶粒。然後檢測膠帶之晶圓背部塗層的殘留物。釋離結果係報告於表1中。
表1中之資料表明未經電暈處理之聚烯烴載體膠帶片及經聚矽氧 塗佈之PET載體膠帶片產生晶圓背部塗層自載體膠帶之所需的釋離及晶圓背部塗層對經切割之半導體晶粒之持續的黏著性。結果顯示該等膜之表面為可接受的撿拾性的一個關鍵因素。即使當該部分固化之晶圓背部塗層保持膠黏時，未經電暈處理之聚烯烴膜及用於聚酯釋離襯墊之經聚矽氧處理之表面的應用容許來自經切割之晶圓之晶粒自載體膠帶被拾離，而晶圓背部塗層黏著至晶粒(及未留在載體膠帶自身上)。此外，這可以在不需要位於載體膠帶上之單獨的黏著劑層下完成。
實例2：撿拾性能
自經切割之晶圓切單之晶粒係藉由針通過載體膠帶上推晶粒而自該載體膠帶移除，之後其係經機器撿拾及移動至所需的基板。自載體膠帶上推晶粒的所需時間及在晶粒釋離之前針需要上推的高度係撿拾性之量度。時間係以毫秒測量；較短時間意味著較佳加工產率。高度係以毫米測量；較低高度意味著在撿拾期間針壓迫晶粒之低可能性。因此，較短時間及較低針高度表明較佳撿拾性。
與提供經塗佈之黏著劑的商業切割膠帶進行比較，評估層壓至未經電暈處理之聚烯烴載體膜(由日本Gunze Company供應，無黏著劑)的晶圓的撿拾性。該商業切割膠帶為由位於90μm聚烯烴載體膠帶上之10μm專用UV可固化黏著劑層組成的Denka產品UPP8010W1。
所用晶圓背部塗層材料為來自Henkel Electronics Materials之兩種：形成不膠黏塗層(膠黏性評級為0)及在90秒UV照射之後具有~500MPa之室溫儲存模量的商業環氧/丙烯酸酯材料(WBC8901UV)；及形成膠黏塗層(膠黏性評級為4)及在90-120s UV照射之後具有2-3MPa之室溫模量的專用橡膠化環氧/丙烯酸酯材料。
如實例1般製造及切割該等晶圓及接著利用標準拾放機器設備測試撿拾性。表2報告針對形成不膠黏塗層及具有~500MPa之室溫儲存 模量的商業環氧/丙烯酸酯材料(WBC8901UV)之結果及表3報告針對形成膠黏塗層及具有2-3MPa之室溫模量的橡膠化環氧/丙烯酸酯材料之結果。
結果顯示針對不膠黏及膠黏WBC材料，均在未經黏著劑塗佈之聚烯烴載體上實現較短時間及較低針高度的一致撿拾。這與利用經黏著劑塗佈之聚烯烴載體的結果相反，其中膠黏晶圓背部塗層之使用阻礙自載體膠帶拾離晶粒，及不膠黏晶圓背部塗層之使用阻礙在低針高度及短時間下自載體膠帶拾離晶粒。

Claims (4)

  1. 一種半導體組合件，其依序包括半導體晶圓、配置於該晶圓背部之上的黏著劑塗層及裸切割膠帶，其中該裸切割膠帶不含黏著劑層。
  2. 如請求項1之半導體組合件，其中該裸切割膠帶為未經電暈處理之聚烯烴或經聚矽氧處理之聚酯。
  3. 如請求項1之半導體組合件，其中該裸切割膠帶為透UV輻射。
  4. 一種製造半導體晶圓、晶圓背部塗層及裸切割膠帶之組合件的方法，該方法包括(a)提供半導體晶圓，(b)在該半導體晶圓上配置晶圓背部塗層，(c)使該晶圓背部塗層部分固化至其黏附至該晶圓背部及保持膠黏的程度，及(d)視需要利用熱及壓力使該裸切割膠帶接觸至該部分固化及膠黏的晶圓背部塗層，其中該裸切割膠帶不含黏著劑層。
TW103102785A 2013-02-11 2014-01-24 作爲切割膠帶黏著劑之晶圓背部塗層 TWI616943B (zh)

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