TWI613721B - 電漿蝕刻方法 - Google Patents

電漿蝕刻方法 Download PDF

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Publication number
TWI613721B
TWI613721B TW104140258A TW104140258A TWI613721B TW I613721 B TWI613721 B TW I613721B TW 104140258 A TW104140258 A TW 104140258A TW 104140258 A TW104140258 A TW 104140258A TW I613721 B TWI613721 B TW I613721B
Authority
TW
Taiwan
Prior art keywords
plasma
etching
frequency power
high frequency
frequency
Prior art date
Application number
TW104140258A
Other languages
English (en)
Chinese (zh)
Other versions
TW201631657A (zh
Inventor
舟久保隆男
狐塚慎一
瀨谷祐太
三谷在利
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201631657A publication Critical patent/TW201631657A/zh
Application granted granted Critical
Publication of TWI613721B publication Critical patent/TWI613721B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
TW104140258A 2014-12-04 2015-12-02 電漿蝕刻方法 TWI613721B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014246069A JP6316735B2 (ja) 2014-12-04 2014-12-04 プラズマエッチング方法
JP2014-246069 2014-12-04

Publications (2)

Publication Number Publication Date
TW201631657A TW201631657A (zh) 2016-09-01
TWI613721B true TWI613721B (zh) 2018-02-01

Family

ID=56094952

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104140258A TWI613721B (zh) 2014-12-04 2015-12-02 電漿蝕刻方法

Country Status (4)

Country Link
US (1) US9779962B2 (https=)
JP (1) JP6316735B2 (https=)
KR (1) KR101900136B1 (https=)
TW (1) TWI613721B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10002744B2 (en) * 2013-12-17 2018-06-19 Tokyo Electron Limited System and method for controlling plasma density
JP6541596B2 (ja) * 2016-03-22 2019-07-10 東京エレクトロン株式会社 プラズマ処理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140302682A1 (en) * 2013-04-09 2014-10-09 Hitachi High-Technologies Corporation Method and apparatus for plasma processing

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JP5094289B2 (ja) * 2007-09-05 2012-12-12 株式会社日立ハイテクノロジーズ プラズマ処理装置
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EP2267764A4 (en) * 2008-03-07 2011-05-04 Ulvac Inc PLASMA PROCESSING
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WO2011016266A1 (ja) * 2009-08-07 2011-02-10 株式会社京三製作所 パルス変調高周波電力制御方法およびパルス変調高周波電源装置
JP5461148B2 (ja) * 2009-11-05 2014-04-02 株式会社日立ハイテクノロジーズ プラズマエッチング方法及び装置
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US9620382B2 (en) * 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
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US20140302682A1 (en) * 2013-04-09 2014-10-09 Hitachi High-Technologies Corporation Method and apparatus for plasma processing

Also Published As

Publication number Publication date
TW201631657A (zh) 2016-09-01
KR20160067740A (ko) 2016-06-14
JP2016111140A (ja) 2016-06-20
US9779962B2 (en) 2017-10-03
KR101900136B1 (ko) 2018-09-18
JP6316735B2 (ja) 2018-04-25
US20160163554A1 (en) 2016-06-09

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