KR101900136B1 - 플라즈마 에칭 방법 - Google Patents

플라즈마 에칭 방법 Download PDF

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Publication number
KR101900136B1
KR101900136B1 KR1020150166149A KR20150166149A KR101900136B1 KR 101900136 B1 KR101900136 B1 KR 101900136B1 KR 1020150166149 A KR1020150166149 A KR 1020150166149A KR 20150166149 A KR20150166149 A KR 20150166149A KR 101900136 B1 KR101900136 B1 KR 101900136B1
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South Korea
Prior art keywords
etching
plasma
high frequency
frequency power
power
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Korean (ko)
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KR20160067740A (ko
Inventor
다카오 후나쿠보
신이치 고즈카
유타 세야
아리토시 미타니
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도쿄엘렉트론가부시키가이샤
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    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H01L21/0234—
    • H01L21/67069—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
KR1020150166149A 2014-12-04 2015-11-26 플라즈마 에칭 방법 Active KR101900136B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014246069A JP6316735B2 (ja) 2014-12-04 2014-12-04 プラズマエッチング方法
JPJP-P-2014-246069 2014-12-04

Publications (2)

Publication Number Publication Date
KR20160067740A KR20160067740A (ko) 2016-06-14
KR101900136B1 true KR101900136B1 (ko) 2018-09-18

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KR1020150166149A Active KR101900136B1 (ko) 2014-12-04 2015-11-26 플라즈마 에칭 방법

Country Status (4)

Country Link
US (1) US9779962B2 (https=)
JP (1) JP6316735B2 (https=)
KR (1) KR101900136B1 (https=)
TW (1) TWI613721B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10002744B2 (en) * 2013-12-17 2018-06-19 Tokyo Electron Limited System and method for controlling plasma density
JP6541596B2 (ja) * 2016-03-22 2019-07-10 東京エレクトロン株式会社 プラズマ処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079600A (ja) * 2002-08-12 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置及び方法
JP2009076798A (ja) 2007-09-25 2009-04-09 Panasonic Corp プラズマ処理方法
JP5014435B2 (ja) 2006-11-17 2012-08-29 ラム リサーチ コーポレーション 高速ガス切り替えプラズマ処理装置
US20140302682A1 (en) 2013-04-09 2014-10-09 Hitachi High-Technologies Corporation Method and apparatus for plasma processing

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KR890004881B1 (ko) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리 방법 및 그 장치
JPH0514435A (ja) 1991-07-08 1993-01-22 Fujitsu Ltd 装置内監視方式
JP2000012529A (ja) * 1998-06-26 2000-01-14 Hitachi Ltd 表面加工装置
WO2003021002A1 (en) * 2001-08-29 2003-03-13 Tokyo Electron Limited Apparatus and method for plasma processing
US6700090B2 (en) * 2002-04-26 2004-03-02 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
US7025895B2 (en) * 2002-08-15 2006-04-11 Hitachi High-Technologies Corporation Plasma processing apparatus and method
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5094289B2 (ja) * 2007-09-05 2012-12-12 株式会社日立ハイテクノロジーズ プラズマ処理装置
EP2267764A4 (en) * 2008-03-07 2011-05-04 Ulvac Inc PLASMA PROCESSING
KR101489326B1 (ko) * 2008-09-09 2015-02-11 삼성전자주식회사 기판의 처리 방법
WO2011016266A1 (ja) * 2009-08-07 2011-02-10 株式会社京三製作所 パルス変調高周波電力制御方法およびパルス変調高周波電源装置
JP5461148B2 (ja) * 2009-11-05 2014-04-02 株式会社日立ハイテクノロジーズ プラズマエッチング方法及び装置
US8709953B2 (en) * 2011-10-27 2014-04-29 Applied Materials, Inc. Pulsed plasma with low wafer temperature for ultra thin layer etches
US20130119018A1 (en) * 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
US8808561B2 (en) * 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems
JP5977509B2 (ja) * 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US8883028B2 (en) * 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
JP5887201B2 (ja) * 2012-05-14 2016-03-16 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理プログラム、及び記憶媒体
JP5822795B2 (ja) * 2012-07-17 2015-11-24 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2015099824A (ja) * 2013-11-18 2015-05-28 株式会社東芝 基板処理装置及び制御方法
US9620382B2 (en) * 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
JP6424024B2 (ja) * 2014-06-24 2018-11-14 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
KR101745686B1 (ko) * 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
KR102247560B1 (ko) * 2014-07-14 2021-05-03 삼성전자 주식회사 Rps에서의 플라즈마 생성방법, 및 그 플라즈마 생성방법을 포함한 반도체 소자 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079600A (ja) * 2002-08-12 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置及び方法
JP5014435B2 (ja) 2006-11-17 2012-08-29 ラム リサーチ コーポレーション 高速ガス切り替えプラズマ処理装置
JP2009076798A (ja) 2007-09-25 2009-04-09 Panasonic Corp プラズマ処理方法
US20140302682A1 (en) 2013-04-09 2014-10-09 Hitachi High-Technologies Corporation Method and apparatus for plasma processing

Also Published As

Publication number Publication date
TW201631657A (zh) 2016-09-01
TWI613721B (zh) 2018-02-01
KR20160067740A (ko) 2016-06-14
JP2016111140A (ja) 2016-06-20
US9779962B2 (en) 2017-10-03
JP6316735B2 (ja) 2018-04-25
US20160163554A1 (en) 2016-06-09

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