TWI613721B - 電漿蝕刻方法 - Google Patents
電漿蝕刻方法 Download PDFInfo
- Publication number
- TWI613721B TWI613721B TW104140258A TW104140258A TWI613721B TW I613721 B TWI613721 B TW I613721B TW 104140258 A TW104140258 A TW 104140258A TW 104140258 A TW104140258 A TW 104140258A TW I613721 B TWI613721 B TW I613721B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- etching
- frequency power
- high frequency
- frequency
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 171
- 238000001020 plasma etching Methods 0.000 title claims abstract description 57
- 230000008569 process Effects 0.000 claims abstract description 131
- 238000005530 etching Methods 0.000 claims abstract description 100
- 230000004044 response Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 47
- 239000003990 capacitor Substances 0.000 description 23
- 238000012545 processing Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014246069A JP6316735B2 (ja) | 2014-12-04 | 2014-12-04 | プラズマエッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201631657A TW201631657A (zh) | 2016-09-01 |
| TWI613721B true TWI613721B (zh) | 2018-02-01 |
Family
ID=56094952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104140258A TWI613721B (zh) | 2014-12-04 | 2015-12-02 | 電漿蝕刻方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9779962B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6316735B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101900136B1 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI613721B (cg-RX-API-DMAC7.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106415779B (zh) * | 2013-12-17 | 2020-01-21 | 东京毅力科创株式会社 | 用于控制等离子体密度的系统和方法 |
| JP6541596B2 (ja) * | 2016-03-22 | 2019-07-10 | 東京エレクトロン株式会社 | プラズマ処理方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140302682A1 (en) * | 2013-04-09 | 2014-10-09 | Hitachi High-Technologies Corporation | Method and apparatus for plasma processing |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR890004881B1 (ko) * | 1983-10-19 | 1989-11-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리 방법 및 그 장치 |
| JPH0514435A (ja) | 1991-07-08 | 1993-01-22 | Fujitsu Ltd | 装置内監視方式 |
| JP2000012529A (ja) * | 1998-06-26 | 2000-01-14 | Hitachi Ltd | 表面加工装置 |
| US7199328B2 (en) * | 2001-08-29 | 2007-04-03 | Tokyo Electron Limited | Apparatus and method for plasma processing |
| US6700090B2 (en) * | 2002-04-26 | 2004-03-02 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
| JP3681718B2 (ja) * | 2002-08-12 | 2005-08-10 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及び方法 |
| US7025895B2 (en) * | 2002-08-15 | 2006-04-11 | Hitachi High-Technologies Corporation | Plasma processing apparatus and method |
| US20070066038A1 (en) * | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
| JP5192209B2 (ja) * | 2006-10-06 | 2013-05-08 | 東京エレクトロン株式会社 | プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 |
| JP5094289B2 (ja) * | 2007-09-05 | 2012-12-12 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP5008509B2 (ja) | 2007-09-25 | 2012-08-22 | パナソニック株式会社 | プラズマ処理方法 |
| CN101960569B (zh) * | 2008-03-07 | 2012-11-28 | 株式会社爱发科 | 等离子处理方法 |
| KR101489326B1 (ko) * | 2008-09-09 | 2015-02-11 | 삼성전자주식회사 | 기판의 처리 방법 |
| SG175695A1 (en) * | 2009-08-07 | 2011-12-29 | Kyosan Electric Mfg | Pulse-modulated high-frequency power control method and pulse-modulated high-frequency power source device |
| JP5461148B2 (ja) * | 2009-11-05 | 2014-04-02 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法及び装置 |
| US8709953B2 (en) * | 2011-10-27 | 2014-04-29 | Applied Materials, Inc. | Pulsed plasma with low wafer temperature for ultra thin layer etches |
| US8808561B2 (en) * | 2011-11-15 | 2014-08-19 | Lam Research Coporation | Inert-dominant pulsing in plasma processing systems |
| US20130119018A1 (en) * | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
| JP5977509B2 (ja) * | 2011-12-09 | 2016-08-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US8883028B2 (en) * | 2011-12-28 | 2014-11-11 | Lam Research Corporation | Mixed mode pulsing etching in plasma processing systems |
| JP5887201B2 (ja) * | 2012-05-14 | 2016-03-16 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、基板処理プログラム、及び記憶媒体 |
| JP5822795B2 (ja) * | 2012-07-17 | 2015-11-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP2015099824A (ja) * | 2013-11-18 | 2015-05-28 | 株式会社東芝 | 基板処理装置及び制御方法 |
| US9620382B2 (en) * | 2013-12-06 | 2017-04-11 | University Of Maryland, College Park | Reactor for plasma-based atomic layer etching of materials |
| JP6424024B2 (ja) * | 2014-06-24 | 2018-11-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| US9768033B2 (en) * | 2014-07-10 | 2017-09-19 | Tokyo Electron Limited | Methods for high precision etching of substrates |
| KR102247560B1 (ko) * | 2014-07-14 | 2021-05-03 | 삼성전자 주식회사 | Rps에서의 플라즈마 생성방법, 및 그 플라즈마 생성방법을 포함한 반도체 소자 제조방법 |
-
2014
- 2014-12-04 JP JP2014246069A patent/JP6316735B2/ja active Active
-
2015
- 2015-11-26 KR KR1020150166149A patent/KR101900136B1/ko active Active
- 2015-12-02 TW TW104140258A patent/TWI613721B/zh active
- 2015-12-02 US US14/956,719 patent/US9779962B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140302682A1 (en) * | 2013-04-09 | 2014-10-09 | Hitachi High-Technologies Corporation | Method and apparatus for plasma processing |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201631657A (zh) | 2016-09-01 |
| KR20160067740A (ko) | 2016-06-14 |
| JP2016111140A (ja) | 2016-06-20 |
| US20160163554A1 (en) | 2016-06-09 |
| US9779962B2 (en) | 2017-10-03 |
| KR101900136B1 (ko) | 2018-09-18 |
| JP6316735B2 (ja) | 2018-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI519211B (zh) | 對操作電漿製程之系統進行調諧的方法 | |
| US10692729B2 (en) | Etching process method | |
| KR102811330B1 (ko) | 원자 레벨 레졸루션 및 플라즈마 프로세싱 제어를 위한 방법들 | |
| JP6449674B2 (ja) | プラズマ処理方法及びプラズマ処理装置 | |
| JP6141855B2 (ja) | プラズマエッチング方法及びプラズマエッチング装置 | |
| KR20150100522A (ko) | 에칭 방법 | |
| TWI633599B (zh) | Etching method and etching device | |
| KR20100028486A (ko) | 플라즈마 처리 방법 및 레지스트 패턴의 개질 방법 | |
| JP2008235901A (ja) | パルス化ｖｈｆ動作によるプラズマ種と均一性の制御 | |
| JP2016143890A (ja) | 自己配列されたパターニング集積化スキームにおけるパターン密度を増加させるための方法 | |
| KR102663567B1 (ko) | 플라즈마 에칭 방법 | |
| KR20150097416A (ko) | 반도체 장치의 제조 방법 | |
| US20170358460A1 (en) | Etching process method | |
| US20190006150A1 (en) | Semiconductor manufacturing device and method of operating the same | |
| KR20150067738A (ko) | 에칭 방법 | |
| JP2014096500A (ja) | プラズマエッチング方法及びプラズマエッチング装置 | |
| JP6878174B2 (ja) | プラズマエッチング方法及びプラズマエッチング装置 | |
| US11610762B2 (en) | Plasma processing apparatus and power supply method | |
| TWI613721B (zh) | 電漿蝕刻方法 | |
| JP7638371B2 (ja) | プラズマ処理装置及びｒｆシステム | |
| US20200144051A1 (en) | Processing method and substrate processing apparatus | |
| US11749532B2 (en) | Methods and apparatus for processing a substrate | |
| CN113178373A (zh) | 处理方法及等离子体处理装置 | |
| KR20230085168A (ko) | 기판 처리 방법 및 기판 처리 장치 | |
| KR102902844B1 (ko) | 기판을 프로세싱하기 위한 방법들 및 장치 |