TWI612683B - 用於製備光敏元件及增加包含於其中之塊材異質接面的結晶度之熱退火及溶劑蒸汽退火方法 - Google Patents

用於製備光敏元件及增加包含於其中之塊材異質接面的結晶度之熱退火及溶劑蒸汽退火方法 Download PDF

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Publication number
TWI612683B
TWI612683B TW105142138A TW105142138A TWI612683B TW I612683 B TWI612683 B TW I612683B TW 105142138 A TW105142138 A TW 105142138A TW 105142138 A TW105142138 A TW 105142138A TW I612683 B TWI612683 B TW I612683B
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Taiwan
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solvent
bulk heterojunction
annealing
organic photoactive
bulk
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TW105142138A
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English (en)
Chinese (zh)
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TW201715739A (zh
Inventor
史堤芬Ｒ 佛瑞特
馬克Ｅ 湯普生
韋國丹
王思軼
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美國密西根州立大學
美國南加州大學
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
TW105142138A 2010-04-08 2011-04-08 用於製備光敏元件及增加包含於其中之塊材異質接面的結晶度之熱退火及溶劑蒸汽退火方法 TWI612683B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US32203910P 2010-04-08 2010-04-08
US61/322,039 2010-04-08
US39364610P 2010-10-15 2010-10-15
US61/393,646 2010-10-15

Publications (2)

Publication Number Publication Date
TW201715739A TW201715739A (zh) 2017-05-01
TWI612683B true TWI612683B (zh) 2018-01-21

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TW105142138A TWI612683B (zh) 2010-04-08 2011-04-08 用於製備光敏元件及增加包含於其中之塊材異質接面的結晶度之熱退火及溶劑蒸汽退火方法
TW100112285A TWI577035B (zh) 2010-04-08 2011-04-08 用於製備光敏元件及增加包含於其中之塊材異質接面的結晶度之熱退火及溶劑蒸汽退火方法

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US (1) US9768402B2 (https=)
EP (1) EP2556548B1 (https=)
JP (1) JP5933524B2 (https=)
KR (4) KR20180108918A (https=)
CN (1) CN102939673B (https=)
AU (1) AU2011237636A1 (https=)
CA (1) CA2795742A1 (https=)
TW (2) TWI612683B (https=)
WO (1) WO2011127186A1 (https=)

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CN104919615A (zh) * 2012-11-22 2015-09-16 密歇根大学董事会 在有机光伏器件的沉积后加工期间使用反向准外延来修改有序性
CN103236503B (zh) * 2013-04-22 2015-07-01 国家纳米科学中心 一种聚合物太阳能电池及其制备方法
CN105308729B (zh) * 2013-06-20 2018-08-03 日产化学工业株式会社 n型有机半导体薄膜的制造方法
TW201501340A (zh) * 2013-06-27 2015-01-01 Inst Nuclear Energy Res Atomic Energy Council 製備大面積有機太陽能電池之方法
JP2015165529A (ja) * 2014-02-28 2015-09-17 セイコーエプソン株式会社 有機半導体膜の製造方法、有機半導体膜、薄膜トランジスタ、アクティブマトリクス装置、電気光学装置および電子機器
KR101515118B1 (ko) * 2014-03-12 2015-06-05 포항공과대학교 산학협력단 C60 및 공액계 유기 분자의 수직성장 나노 구조체의 제조 방법
CN106816533B (zh) * 2017-03-09 2019-05-31 南京邮电大学 一种酞菁衍生物薄膜作为阴极缓冲层的倒置有机太阳能电池及其制备方法
CN108807675A (zh) * 2018-05-07 2018-11-13 南京邮电大学 一种表面钝化钙钛矿薄膜的太阳能电池制备方法
CN111628091A (zh) * 2020-06-08 2020-09-04 西北工业大学 一种溶剂浴辅助热处理改善钙钛矿薄膜质量的方法

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JP5933524B2 (ja) 2016-06-08
US20130210189A1 (en) 2013-08-15
EP2556548B1 (en) 2022-02-23
CN102939673A (zh) 2013-02-20
CA2795742A1 (en) 2011-10-13
AU2011237636A1 (en) 2012-11-08
TW201210049A (en) 2012-03-01
TWI577035B (zh) 2017-04-01
KR20180108918A (ko) 2018-10-04
KR20130094700A (ko) 2013-08-26
TW201715739A (zh) 2017-05-01
KR20230058180A (ko) 2023-05-02
CN102939673B (zh) 2018-05-15
EP2556548A1 (en) 2013-02-13
US9768402B2 (en) 2017-09-19
WO2011127186A1 (en) 2011-10-13
KR20200127032A (ko) 2020-11-09
JP2013527978A (ja) 2013-07-04

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