JP5933524B2 - 熱および溶媒蒸気アニール工程により製造される、改良されたバルクヘテロジャンクション型デバイス - Google Patents

熱および溶媒蒸気アニール工程により製造される、改良されたバルクヘテロジャンクション型デバイス Download PDF

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JP5933524B2
JP5933524B2 JP2013503916A JP2013503916A JP5933524B2 JP 5933524 B2 JP5933524 B2 JP 5933524B2 JP 2013503916 A JP2013503916 A JP 2013503916A JP 2013503916 A JP2013503916 A JP 2013503916A JP 5933524 B2 JP5933524 B2 JP 5933524B2
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solvent
small molecule
photoactive material
organic photoactive
molecule organic
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JP2013527978A5 (https=
JP2013527978A (ja
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フォレスト，ステファン，アール．
トンプソン，マーク，イー．
ウェイ，ゴーダン
ワン，シイ
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ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン
ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン
ユニバーシティ オブ サザン カリフォルニア
ユニバーシティ オブ サザン カリフォルニア
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
JP2013503916A 2010-04-08 2011-04-06 熱および溶媒蒸気アニール工程により製造される、改良されたバルクヘテロジャンクション型デバイス Expired - Fee Related JP5933524B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US32203910P 2010-04-08 2010-04-08
US61/322,039 2010-04-08
US39364610P 2010-10-15 2010-10-15
US61/393,646 2010-10-15
PCT/US2011/031439 WO2011127186A1 (en) 2010-04-08 2011-04-06 Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes

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JP2013527978A JP2013527978A (ja) 2013-07-04
JP2013527978A5 JP2013527978A5 (https=) 2014-05-22
JP5933524B2 true JP5933524B2 (ja) 2016-06-08

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JP2013503916A Expired - Fee Related JP5933524B2 (ja) 2010-04-08 2011-04-06 熱および溶媒蒸気アニール工程により製造される、改良されたバルクヘテロジャンクション型デバイス

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US (1) US9768402B2 (https=)
EP (1) EP2556548B1 (https=)
JP (1) JP5933524B2 (https=)
KR (4) KR20180108918A (https=)
CN (1) CN102939673B (https=)
AU (1) AU2011237636A1 (https=)
CA (1) CA2795742A1 (https=)
TW (2) TWI612683B (https=)
WO (1) WO2011127186A1 (https=)

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KR102063109B1 (ko) * 2012-07-11 2020-01-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN104919615A (zh) * 2012-11-22 2015-09-16 密歇根大学董事会 在有机光伏器件的沉积后加工期间使用反向准外延来修改有序性
CN103236503B (zh) * 2013-04-22 2015-07-01 国家纳米科学中心 一种聚合物太阳能电池及其制备方法
CN105308729B (zh) * 2013-06-20 2018-08-03 日产化学工业株式会社 n型有机半导体薄膜的制造方法
TW201501340A (zh) * 2013-06-27 2015-01-01 Inst Nuclear Energy Res Atomic Energy Council 製備大面積有機太陽能電池之方法
JP2015165529A (ja) * 2014-02-28 2015-09-17 セイコーエプソン株式会社 有機半導体膜の製造方法、有機半導体膜、薄膜トランジスタ、アクティブマトリクス装置、電気光学装置および電子機器
KR101515118B1 (ko) * 2014-03-12 2015-06-05 포항공과대학교 산학협력단 C60 및 공액계 유기 분자의 수직성장 나노 구조체의 제조 방법
CN106816533B (zh) * 2017-03-09 2019-05-31 南京邮电大学 一种酞菁衍生物薄膜作为阴极缓冲层的倒置有机太阳能电池及其制备方法
CN108807675A (zh) * 2018-05-07 2018-11-13 南京邮电大学 一种表面钝化钙钛矿薄膜的太阳能电池制备方法
CN111628091A (zh) * 2020-06-08 2020-09-04 西北工业大学 一种溶剂浴辅助热处理改善钙钛矿薄膜质量的方法

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US6420031B1 (en) 1997-11-03 2002-07-16 The Trustees Of Princeton University Highly transparent non-metallic cathodes
US6352777B1 (en) 1998-08-19 2002-03-05 The Trustees Of Princeton University Organic photosensitive optoelectronic devices with transparent electrodes
US6451415B1 (en) 1998-08-19 2002-09-17 The Trustees Of Princeton University Organic photosensitive optoelectronic device with an exciton blocking layer
AU7094400A (en) * 1999-08-31 2001-03-26 E-Ink Corporation A solvent annealing process for forming a thin semiconductor film with advantageous properties
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Publication number Publication date
US20130210189A1 (en) 2013-08-15
EP2556548B1 (en) 2022-02-23
CN102939673A (zh) 2013-02-20
CA2795742A1 (en) 2011-10-13
AU2011237636A1 (en) 2012-11-08
TW201210049A (en) 2012-03-01
TWI577035B (zh) 2017-04-01
KR20180108918A (ko) 2018-10-04
KR20130094700A (ko) 2013-08-26
TW201715739A (zh) 2017-05-01
KR20230058180A (ko) 2023-05-02
CN102939673B (zh) 2018-05-15
TWI612683B (zh) 2018-01-21
EP2556548A1 (en) 2013-02-13
US9768402B2 (en) 2017-09-19
WO2011127186A1 (en) 2011-10-13
KR20200127032A (ko) 2020-11-09
JP2013527978A (ja) 2013-07-04

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