CN102939673B - 通过热和溶剂蒸汽退火法制备的增强的体异质结器件 - Google Patents

通过热和溶剂蒸汽退火法制备的增强的体异质结器件 Download PDF

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Publication number
CN102939673B
CN102939673B CN201180027965.4A CN201180027965A CN102939673B CN 102939673 B CN102939673 B CN 102939673B CN 201180027965 A CN201180027965 A CN 201180027965A CN 102939673 B CN102939673 B CN 102939673B
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China
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solvent
bulk heterojunction
active material
small molecule
organic light
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Chinese (zh)
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CN102939673A (zh
Inventor
斯蒂芬·R·弗里斯特
马克·E·汤普森
魏苟砀
王思轶
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University of Southern California USC
University of Michigan Ann Arbor
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University of Southern California USC
University of Michigan Ann Arbor
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
CN201180027965.4A 2010-04-08 2011-04-06 通过热和溶剂蒸汽退火法制备的增强的体异质结器件 Expired - Fee Related CN102939673B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US32203910P 2010-04-08 2010-04-08
US61/322,039 2010-04-08
US39364610P 2010-10-15 2010-10-15
US61/393,646 2010-10-15
PCT/US2011/031439 WO2011127186A1 (en) 2010-04-08 2011-04-06 Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes

Publications (2)

Publication Number Publication Date
CN102939673A CN102939673A (zh) 2013-02-20
CN102939673B true CN102939673B (zh) 2018-05-15

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Country Link
US (1) US9768402B2 (https=)
EP (1) EP2556548B1 (https=)
JP (1) JP5933524B2 (https=)
KR (4) KR20180108918A (https=)
CN (1) CN102939673B (https=)
AU (1) AU2011237636A1 (https=)
CA (1) CA2795742A1 (https=)
TW (2) TWI612683B (https=)
WO (1) WO2011127186A1 (https=)

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KR102063109B1 (ko) * 2012-07-11 2020-01-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN104919615A (zh) * 2012-11-22 2015-09-16 密歇根大学董事会 在有机光伏器件的沉积后加工期间使用反向准外延来修改有序性
CN103236503B (zh) * 2013-04-22 2015-07-01 国家纳米科学中心 一种聚合物太阳能电池及其制备方法
CN105308729B (zh) * 2013-06-20 2018-08-03 日产化学工业株式会社 n型有机半导体薄膜的制造方法
TW201501340A (zh) * 2013-06-27 2015-01-01 Inst Nuclear Energy Res Atomic Energy Council 製備大面積有機太陽能電池之方法
JP2015165529A (ja) * 2014-02-28 2015-09-17 セイコーエプソン株式会社 有機半導体膜の製造方法、有機半導体膜、薄膜トランジスタ、アクティブマトリクス装置、電気光学装置および電子機器
KR101515118B1 (ko) * 2014-03-12 2015-06-05 포항공과대학교 산학협력단 C60 및 공액계 유기 분자의 수직성장 나노 구조체의 제조 방법
CN106816533B (zh) * 2017-03-09 2019-05-31 南京邮电大学 一种酞菁衍生物薄膜作为阴极缓冲层的倒置有机太阳能电池及其制备方法
CN108807675A (zh) * 2018-05-07 2018-11-13 南京邮电大学 一种表面钝化钙钛矿薄膜的太阳能电池制备方法
CN111628091A (zh) * 2020-06-08 2020-09-04 西北工业大学 一种溶剂浴辅助热处理改善钙钛矿薄膜质量的方法

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Publication number Publication date
JP5933524B2 (ja) 2016-06-08
US20130210189A1 (en) 2013-08-15
EP2556548B1 (en) 2022-02-23
CN102939673A (zh) 2013-02-20
CA2795742A1 (en) 2011-10-13
AU2011237636A1 (en) 2012-11-08
TW201210049A (en) 2012-03-01
TWI577035B (zh) 2017-04-01
KR20180108918A (ko) 2018-10-04
KR20130094700A (ko) 2013-08-26
TW201715739A (zh) 2017-05-01
KR20230058180A (ko) 2023-05-02
TWI612683B (zh) 2018-01-21
EP2556548A1 (en) 2013-02-13
US9768402B2 (en) 2017-09-19
WO2011127186A1 (en) 2011-10-13
KR20200127032A (ko) 2020-11-09
JP2013527978A (ja) 2013-07-04

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