TWI605740B - 基體之接合方法 - Google Patents

基體之接合方法 Download PDF

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Publication number
TWI605740B
TWI605740B TW103126218A TW103126218A TWI605740B TW I605740 B TWI605740 B TW I605740B TW 103126218 A TW103126218 A TW 103126218A TW 103126218 A TW103126218 A TW 103126218A TW I605740 B TWI605740 B TW I605740B
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Taiwan
Prior art keywords
metal
substrate
powder
bonding method
layer
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TW103126218A
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English (en)
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TW201521530A (zh
Inventor
Nobuhiro Imaizumi
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Fujitsu Ltd
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Description

基體之接合方法 發明領域
本發明是有關於一種基體之接合方法，例如有關於將形成於基體之諸金屬層結合之基體的接合方法。
發明背景
眾所周知有將諸基體使用金屬層而電性與機械性地連接的接合方法。為人所知的有例如，將半導體元件積層並高積體化的方法或將半導體元件接合於電路基板的方法。又廣為人知的有，在電路基板形成銅端子，並將端子表面置換鍍成錫的方法(例如，專利文獻1)。
先行技術文獻 專利文獻
[專利文獻1]日本特開2011-44563號公報
發明概要
當金屬層縮小化時，諸金屬層之接合強度就會降低，諸基體之接合強度便降低。本基體之接合方法目的在於使諸金屬層之接合強度提升。
本發明使用之基體之接合方法，其特徵在於包含有：將個別形成於複數個基體上之諸金屬層透過包含第1金屬之多孔質材料而相對向的步驟、將前述多孔質材料表面之前述第1金屬置換成第2金屬的步驟、及藉由加熱前述第2金屬來接合前述諸金屬層的步驟。
根據本基體之接合方法，便可使諸金屬層之接合強度提升。
10、10a、20、20a、20b、20c、54‧‧‧基體
12、12a、12b、12c、22、22a、22b、22c‧‧‧金屬層
14、14a、14b、24、24a、 58‧‧‧電極
16、26‧‧‧置換層
19、29‧‧‧樹脂膜
23、38‧‧‧障壁層
28‧‧‧保護膜
32、32a~32d、33、33a~33d、 56‧‧‧粉體
34、34a~34c‧‧‧金屬層
35‧‧‧金屬
36、40‧‧‧熔融金屬
37‧‧‧高融點金屬
39‧‧‧絶緣體
42‧‧‧孔洞
44、45‧‧‧合金層
50‧‧‧電子電路
52‧‧‧絶緣膜
60‧‧‧封填材料
62‧‧‧焊接球
H1、H2、H3、H4‧‧‧高度
W1‧‧‧寬度
[圖1]圖1(a)是比較例1之半導體裝置的截面圖，圖1(b)與圖1(c)是金屬層與熔融金屬之擴大立體圖。
[圖2]圖2(a)與圖2(b)是比較例2之半導體裝置的截面圖。
[圖3]圖3(a)與圖3(b)是比較例1之半導體裝置的截面圖。
[圖4]圖4(a)至圖4(c)是金屬層之擴大圖。
[圖5]圖5(a)至圖5(d)是顯示實施例1之基體之接合方法的截面圖。
[圖6]圖6(a)與圖6(b)是顯示實施例2之基體之接合方法的截面圖(其之1)。
[圖7]圖7(a)至圖7(c)是顯示實施例2之基體之接合方法的截面圖(其之2)。
[圖8]圖8(a)至圖8(d)是顯示實施例3之基體之接合方法 的截面圖。
[圖9]圖9(a)與圖9(b)是實施例3之粉體的截面圖。
[圖10]圖10(a)至圖10(c)是顯示實施例4之基體之接合方法的截面圖。
[圖11]圖11(a)與圖11(b)是實施例4之粉體的截面圖。
[圖12]圖12(a)至圖12(c)是顯示實施例5之基體之接合方法的截面圖。
[圖13]圖13(a)與圖13(b)是實施例5之粉體的截面圖。
[圖14]圖14(a)至圖14(c)是顯示實施例6之基體之接合方法的截面圖。
[圖15]圖15(a)至圖15(c)是顯示實施例7之基體之接合方法的截面圖(其之1)。
[圖16]圖16(a)至圖16(c)是顯示實施例7之基體之接合方法的截面圖(其之2)。
[圖17]圖17(a)與圖17(b)是顯示實施例7之基體之接合方法的截面圖(其之3)。
[圖18]圖18(a)至圖18(c)是顯示實施例7之基體之接合方法的截面圖(其之4)。
圖1(a)是比較例1之半導體裝置的截面圖。圖1(b)與圖1(c)是金屬層與熔融金屬的擴大立體圖。參照圖1(a)，基體10上形成有金屬層12。基體20上(圖式中為下)在電極24、電極24上形成有金屬層22。金屬層12與22使用焊接等之熔融金屬40來接合。圖1(b)是顯示金屬層22之例。參照圖1(b)， 金屬層22主要包含例如Cu(銅)的金屬端子。金屬層22上形成有熔融金屬40。金屬層22之寬度W1(金屬層22是圓柱時則為直徑)例如是35μm，金屬層22之高度H1例如是30μm，熔融金屬40之高度H2例如是13μm。參照圖1(c)，金屬層22與熔融金屬40之間形成有障壁層23。障壁層23主要包含例如Ni(鎳)。障壁層23之高度H3例如是5μm。障壁層23會抑制金屬層22與熔融金屬40的反應。隨著半導體裝置等之微細化，相對於金屬層22之寬度W1之高度H1的比例變大，例如變成1以上。會使該比例變大是因例如對應於基體10與20之熱膨張係數的差而起之基體10與20之翹曲的緣故。
圖2(a)與圖2(b)是比較例2之半導體裝置的截面圖。圖2(a)是諸基體接合前的圖，圖2(b)是接合後之金屬層的擴大圖。參照圖2(a)，熔融金屬40會在金屬層22上(圖式中為下)例如利用電鍍法來形成。利用電鍍法所形成之熔融金屬40表面凹凸會很大。參照圖2(b)，使熔融金屬40與金屬層12接觸，並加熱，藉此來接合金屬層12與22。此時，與金屬層22之界面會有熔融金屬40未接觸之區域產生。故，熔融金屬40內會有孔洞42產生。例如，金屬層22表面之平坦性較高時，孔洞42就容易產生。
圖3(a)與圖3(b)是比較例1之導體裝置的截面圖。圖3(a)是諸基體接合前的圖，圖3(b)是接合後之金屬層的擴大圖。參照圖3(a)，為了抑制上述孔洞42之產生，接合基體10與20之前，將熔融金屬40加熱到融點以上之溫度。藉此，熔融金屬40會變成圓頂狀(即半球狀)。參照圖3(b)，接合金 屬層12與22之後，便可抑制在熔融金屬40內之孔洞的產生。
圖4(a)至圖4(c)是金屬層的擴大圖。參照圖4(a)至圖4(c)，例如，會有在矽中介層等之電路基板上搭載半導體元件的情形。或會有藉由將半導體元件3次元地積層，將半導體裝置高積體化的情形。上述情形下，可利用使用於半導體元件之配線形成步驟的製造過程來形成配線。故，與樹脂電路基板相比，可實現50倍以上之配線密度。因此，金屬層12與22之直徑與樹脂電路基板相比，會成為1/8之直徑。
如上所述，當金屬層22之寬度W1(金屬層22是圓柱時則為直徑)變小時，熔融金屬40之高度H2就會變低。這是因圓頂之直徑與金屬層22之寬度大致相同，故在金屬層22上可形成之球狀熔融金屬40體積之上限決定好的緣故。另一方面，當為了使熔融金屬40為圓頂狀而加熱時，熔融金屬40與金屬層22互相反應來形成合金層44。合金層44之高度H4不依據金屬層22之寬度，以加熱時的熱量來決定。因此，合金層44之高度H4大致為固定。當金屬層22之寬度W1變小時，合金層44之比率便會增加。合金層44之融點比熔融金屬40更高，故，便無法進行金屬層12與22之良好的接合。
[實施例1]
圖5(a)至圖5(d)是顯示實施例1之基體之接合方法的截面圖。參照圖5(a)，在基體10之上面形成電極14。在 電極14上形成金屬層12。在基體20之下面形成電極24。在電極24下形成金屬層22。基體10與20是例如矽基板等之半導體基板、或樹脂基板等之絶緣基板。電極14與24主要包含例如Cu或Al(鋁)等之金屬。金屬層12與22主要包含例如Cu等。在金屬層22之下面使複數個粉體32固定。粉體32為粒子狀，例如包含Cu等之金屬35(第1金屬)。粉體32之粒徑例如從1μm至數μm。複數個粉體32可為一層粉體32的層，但亦可為2層以上之粉體32的層。粉體32例如使用霧化法來形成。粉體32例如使用超音波，使其固定於金屬層22之表面。
參照圖5(b)，使金屬層12與22透過複數個粉體32而相對向並接觸而使粉體32與金屬層22之上面相接。參照圖5(c)，將複數個粉體33之表面置換成熔融金屬36(第2金屬)。例如將粉體32內之金屬35全體置換成熔融金屬36而使其為粉體33。置換可例如使用已用了無電鍍之置換鍍法。置換鍍法是將標準電極電位較低之金屬置換成較高之金屬的方法。例如做為可置換成Sn(錫)之金屬會有：Cu、In(銦)、Ni、Fe(鐵)、Mn(錳)、Zr(鋯)、Ti(鈦)、Al、Cr(鉻)及Zn(鋅)。因此，金屬35包含Sn，熔融金屬36可為包含Cu、In、Ni、Fe、Mn、Zr、Ti、Al、Cr及Zn之至少1個的金屬。粉體32、金屬層12與22、電極14與24為相同金屬時，金屬層12與22、電極14與24之側面的金屬會置換成熔融金屬並形成置換層16與26。
參照圖5(d)，將粉體33加熱到熔融金屬36之融點 以上且金屬層34之融點以下，藉此熔融金屬36會熔融且成為金屬層34。藉由冷卻，金屬層12與22會利用金屬層34來接合。
根據實施例1，如圖5(b)所示，使個別形成於複數個基體10與20上之諸金屬層12與22透過包含複數個粉體32之多孔質材料而相對向。如圖5(c)所示，將複數個粉體32之表面之金屬35置換成熔融金屬36。藉由加熱熔融金屬36，來接合諸金屬層12與22。藉此，如比較例1所示，亦可在金屬層12跟22接合之前不將熔融金屬40熔融。故如圖4(a)至圖4(c)，便不會形成合金層44。因此，便可使金屬層12與22之接合強度提升。
又，如包含複數個粉體32之多孔質材料因每一單位體積之表面積較大，故，可容易將金屬35置換成熔融金屬36。
進而，做為多孔質材料而使用複數個粉體32，藉此便可使多孔質材料簡單地固定於金屬層12或22之表面。
[實施例2]
實施例2是將基體積層之例。從圖6(a)至圖7(c)是顯示實施例2之基體之接合方法的截面圖。參照圖6(a)，基體10a與20a、金屬層12a與22a、電極14a與24a，以及粉體32a會與實施例1之圖5(b)之基體10與20、金屬層12與22、電極14與24以及粉體32相同。基體20a之上面形成有電極14b，電極14b上形成有金屬層12b。電極14b與電極24a透過形成於基體20a內之貫通電極而電性地連接。電極14b與電極24a 亦可與形成於基體20a內之電路電性地連接。
參照圖6(b)，在基體20a上積層基體20b。各金屬層12b透過複數個粉體32b而與各金屬層22b相對向。參照圖7(a)，在基體20b上積層基體20c。各金屬層12c透過複數個粉體32c而與各金屬層22c相對向。
參照圖7(b)，與實施例1之圖5(c)相同地，將複數個粉體32a至32c之表面置換成熔融金屬。藉此，來形成包含熔融金屬的粉體33a至33c。參照圖7(c)，將粉體33a至33b加熱到融點以上，藉此粉體33a至33c會熔融而形成金屬層34a至34c。藉由冷卻，金屬層12a與22a利用金屬層34a來接合。同時，金屬層12b與22b利用金屬層34b來接合，金屬層12c與22c利用金屬層34c來接合。
將3個以上之基體積層時，每次積層基體，亦會考慮到接合金屬層之情形。然而，積層初期所接合之金屬層大多要經過用於接合的加熱步驟。例如，金屬層34a會經過3次加熱步驟。故，接合金屬變質，變得硬又脆，則裂縫容易出現。如上所述，因金屬層34a至34c而造成接合之品質不穩定。根據實施例2，如圖7(a)所示，諸金屬層12a與22a、諸12b與22b、諸12c與22c會利用粉體32a至32c來固定。故，加熱金屬層12a與22a之前，即使積層基體20b至20c，亦會彼此固定基體20a至20c。因此，積層基體20a至20c之後，如圖7(b)所示，將複數個粉體33a至33c一起加熱，藉此可將金屬層12a與22a、12b與22b以及12c與22c之間接合。藉此，便可抑制接合之品質的不穩定。
可將基體10例如當作矽中介層或樹脂基板等之電路基板，並可將基體20a至20c例如當作半導體晶片。基體20a至20c之積層數例如可為2、4或8個。基體20a至20c為半導體晶片時，膜厚例如可為20μm至100μm。
[實施例3]
實施例3是將粉體32表面之一部分置換成熔融金屬之例。圖8(a)至圖8(d)是顯示實施例3之基體之接合方法的截面圖。圖9(a)與圖9(b)是實施例3之粉體的截面圖。參照圖8(a)，基體20上(下面)形成有保護膜28。保護膜28是基體20之保護膜是例如包含聚醯亞胺或環氧基等之樹脂的絶緣體。其他步驟與實施例1之圖5(b)相同，便省略說明。
參照圖9(a)，粉體32整體是金屬35。金屬35例如是Cu。參照圖8(b)與圖9(b)，將粉體32之表面的金屬35置換成熔融金屬36，藉此來形成粉體33。粉體33之表面是熔融金屬36，粉體33之內部有金屬35殘存。例如，殘存於內部之金屬35的直徑是粉體33之直徑的1/2至1/4左右。例如，金屬35是Cu，熔融金屬36是Sn時，將置換型無電Sn鍍法以60℃進行15分鐘，藉此便可在粉體33之內部殘存Sn。
參照圖8(c)，加熱複數個粉體33，藉此使熔融金屬36熔融。例如，金屬35是Cu，熔融金屬36是Sn，金屬層12與22是Cu時，將粉體33以300℃加熱3秒。藉此，來形成包含殘存之金屬35的金屬層34。
參照圖8(d)，將熔融金屬36與金屬35加熱藉此合金化。例如，金屬35是Cu，熔融金屬36是Sn，金屬層12與 22是Cu時，使用回焊爐，加熱而使峰頂溫度為240℃以上，熔融金屬36之融點以上的溫度為30秒以上。藉此，熔融金屬36與金屬35會反應，來形成Cu與Sn之合金層45。與金屬層34相比，合金層45較硬，故，比起實施例1便可使接合之強度變更高。
如實施例3所示，亦可將複數個粉體32之表面的金屬35置換成熔融金屬36，而不將粉體32內部之金屬35置換成熔融金屬36。是否要將粉體32內部之金屬35置換成熔融金屬36可用例如置換鍍法的時間來控制。
如圖8(d)所示，將不置換成熔融金屬36之粉體33內部與熔融金屬36合金化，藉此形成合金層45。熔融金屬36較柔軟，故容易變形。藉由形成合金層45，便可將金屬層12與22堅固地接合。亦可不形成合金層45。進而，可設置保護膜28，亦可不設置。
[實施例4]
實施例4是粉體32內部為高融點金屬且將粉體表面之金屬置換成熔融金屬之例。圖10(a)至圖10(c)是顯示實施例4之基體之接合方法的截面圖。圖11(a)與圖11(b)是實施例4之粉體的截面圖。參照圖10(a)，在基體10上形成樹脂膜19。基體20上(下面)形成有樹脂膜29。樹脂膜19與29例如是包含環氧基等之熱硬化樹脂的絶緣體。粉體32在高融點金屬37周圍透過障壁層38來形成金屬35。其他步驟與實施例1之圖5(b)相同，便省略說明。
參照圖11(a)，粉體32中，高融點金屬37周圍用 障壁層38來包圍，障壁層38用金屬35來包圍。高融點金屬37是例如直徑為1μm之Pd(鈀)，使用霧化法來形成。在高融點金屬37之表面，例如使用無電鍍法或滾筒電鍍法來形成障壁層38。障壁層38例如是膜厚為0.5μm之Ni膜。在障壁層38之表面，例如使用無電鍍法或滾筒電鍍法來形成金屬35。金屬35例如是膜厚為1μm之Cu。
參照圖10(b)與圖11(b)，將金屬35置換成熔融金屬36，來形成粉體33。因障壁層38無法置換，故，即使不控制時間，置換鍍法亦會停止。例如，金屬35是Cu，熔融金屬36是Sn時，將置換型無電Sn鍍法以60℃來進行15分鐘。參照圖10(c)，使粉體33之熔融金屬36熔融，藉此來形成包含高融點金屬37與障壁層38的金屬層34。例如，熔融金屬36是Sn時，將粉體33以300℃加熱3秒鐘。使用回焊爐，加熱而使峰頂溫度為240℃以上、30秒以上。藉此，熱硬化樹脂膜19與29以相接之狀態來硬化。
根據實施例4，複數個粉體32主要包含高融點金屬37與形成於高融點金屬37之表面的金屬35。藉此，高融點金屬37可補強金屬層34，故，亦可不進行如實施例3之合金化。
[實施例5]
實施例5是粉體32內部為絶緣體，且將粉體表面之金屬換成熔融金屬之例。圖12(a)至圖12(c)是顯示實施例5之基體之接合方法的截面圖。圖13(a)與圖13(b)是實施例5之粉體的截面圖。參照圖12(a)，粉體32在絶緣體39之周圍 透過障壁層38來形成金屬35。其他步驟與實施例4之圖10(a)相同，便省略說明。
參照圖13(a)，粉體32中，絶緣體39周圍用障壁層38來包圍，障壁層38用金屬35來包圍。絶緣體39例如是直徑為1μm之聚醯亞胺等的樹脂，使用霧化法來形成。其他步驟與實施例4之圖11(a)相同便省略說明。
參照圖12(b)與圖13(b)，將金屬35置換成熔融金屬36，藉此來形成粉體33。其他步驟與實施例4之圖10(b)與圖11(b)相同便省略說明。參照圖12(c)，使粉體33之熔融金屬36熔融，藉此來形成包含絶緣體39與障壁層38之金屬層34。其他步驟與實施例4之圖10(c)相同便省略說明。
根據實施例5，粉體32包含形成於絶緣體39與絶緣體39之表面的金屬35。藉此，絶緣體39為了補強金屬層34，亦可不進行如實施例3之合金化。
如實施例4與5所示，亦可使用樹脂膜19與29來封止基體10與20之間。藉此，亦可不使用封填材料。
如實施例1至5所示，可使多孔質材料內之粉體32為主要包含金屬之粒子狀(例如球狀)。藉此，因粉體32之表面積變大，故，便可容易地將金屬35置換成熔融金屬36。
[實施例6]
實施例6是粉體為纖維狀之例。圖14(a)至圖14(c)是顯示實施例6之基體之接合方法的截面圖。參照圖14(a)，粉體32d為纖維狀。其他步驟與實施例1之圖5(b)相同便省略說明。
參照圖14(b)，將纖維狀粉體32d置換成熔融金屬，藉此來形成纖維狀粉體33d。其他步驟與實施例1之圖5(c)相同便省略說明。參照圖14(c)，將粉體33d熔融，藉此來形成金屬層34。其他步驟與實施例1之圖5(d)相同便省略說明。
如實施例6所示，多孔質材料亦可包含複數個纖維狀粉體。如上所述，實施例1至5之粉體亦可為纖維狀。
[實施例7]
實施例7是將實施例3之基體之接合方法適用於半導體裝置之製造方法的範例。圖15(a)至圖18(c)是顯示實施例7之基體之接合方法的截面圖。參照圖15(a)，在基體20形成電子電路50。基體20是矽基板，為包含複數個晶片之晶圓狀態。在基體20上形成絶緣膜52。電子電路50包含有形成於基體20之電晶體與絶緣膜52內的配線。絶緣膜52例如是氧化矽膜，包含多層配線之層間介電質。在絶緣膜52上形成電極24。電極24包含Cu，並與電子電路50電性地連接。晶片尺寸例如為8.5mm×8.5mm。電極24之間隔例如為50μm，而1個晶片形成有400個電極24。
參照圖15(b)，在絶緣膜52上形成含有聚醯亞胺且膜厚例如為5μm的保護膜28。參照圖15(c)，在電極24上之保護膜28形成開口。在電極24上形成含有Cu且高度例如為15μm的金屬層22。金屬層22是連接用之突狀體(突起端子)。藉由研削晶圓狀態之基體20背面，使基體20之厚度例如為100μm。使用切割法，將晶圓切斷，使其為晶片狀態。
參照圖16(a)，在基板54上配置主要含有Cu之粉體56。粉體56是使用霧化法來形成。粉體56之平均粒徑例如為3μm。參照圖16(b)，使金屬層22之表面與基板54之表面接觸。藉由施加超音波，使粉體56固定於金屬層22之表面。超音波輸出為100kHz，振幅為2μm。參照圖16(c)，將基體20從基板54剝離。在金屬層22上，主要含有Cu之粉體32便會固定。
參照圖17(a)，準備電路基板來作為基體10。基體10主要含有BT(Bismaleimide-Triazine)樹脂且膜厚例如為0.35mm。基體10上形成有電極14。電極14主要含有Cu且配置成使其與電極24對應。電極14上形成有主要含有Cu且高度例如為15μm的金屬層12。金屬層12是突狀體。基體10背面形成有電極58。電極58與電極14會透過形成於基體10內之配線而電性地連接。使用倒裝晶片連接器，在基體10上配置基體20，並使其定位。參照圖17(b)，透過粉體32，使金屬層12與22接觸。使用超音波，透過粉體32，使金屬層12與22機械性地連接。
參照圖18(a)，使用置換型無電錫鍍液(例如石原藥品製580MJ)，將粉體32之表面置換成Sn來形成粉體33。電鍍處理在60℃進行15分鐘。藉此，粉體32之表面約1μm之Cu會置換成Sn，在粉體32之中央會有Cu殘存。加熱粉體33。舉例來說，從基體20側加熱3秒而使粉體33之溫度成為300℃。藉此，粉體33內之Sn便會熔融。進而，使用回焊爐，加熱而使峰頂溫度為240℃，且Sn之融點以上的時間為30秒 以上。藉此，粉體33內之Sn與Cu會合金化，形成合金層45。
參照圖18(b)，在基體10與20之間將封填材料60注入。封填材料60主要含有熱硬化型環氧基樹脂。使用恒溫槽並以150℃之溫度加熱2小時，藉此使封填材料60硬化。參照圖18(c)，在電極58形成焊接球62。焊接球62主要含有Sn-Ag(錫銀)。藉此，在電路基板上搭載有晶片之半導體裝置便會完成。
在實施例7中，已說明在金屬層22之表面使複數個粉體32固定之例，但亦可在金屬層12與22之至少一方之表面使複數個粉體32固定。又，雖使用了實施例3之基體之接合方法，但亦可使用實施例1至6之基體之接合方法。
在實施例1至實施例7中，已說明以凸狀體為例來作為金屬層12與22，但亦可其中一方為突狀體，另一方為板狀(pad)。
以上，已針對本發明之實施例來詳述，但本發明並不限定於這種特定之實施例，在專利請求之範圍所記載之本發明要旨的範圍內，可有各種變形、變更。
10、20‧‧‧基體
12、22‧‧‧金屬層
14、24‧‧‧電極
16、26‧‧‧置換層
32、33‧‧‧粉體
34‧‧‧金屬層
35‧‧‧金屬
36‧‧‧熔融金屬

Claims (10)

  1. 一種基體之接合方法，包含有：使個別形成於複數個基體上之諸金屬層透過包含第1金屬的多孔質材料而相對向的步驟；在前述相對向之步驟後，將前述多孔質材料表面之前述第1金屬置換成第2金屬的步驟；及藉由加熱前述第2金屬，來接合前述諸金屬層的步驟。
  2. 如請求項1之基體之接合方法，其中將前述第1金屬置換成前述第2金屬的步驟是使用置換電鍍法。
  3. 如請求項1或2之基體之接合方法，其中前述多孔質材料是複數個粉體。
  4. 如請求項3之基體之接合方法，其更包含有使前述複數個粉體固定於前述金屬層之至少一方表面的步驟。
  5. 如請求項1或2之基體之接合方法，其中將前述第1金屬置換成前述第2金屬的步驟不會將前述多孔質材料內部置換成前述第2金屬。
  6. 如請求項5之基體之接合方法，其中接合前述諸金屬層的步驟更包含有將前述多孔質材料內部之前述第1金屬與前述第2金屬合金化的步驟。
  7. 如請求項1或2之基體之接合方法，其中前述相對向的步驟包含有使3個以上之前述基體積層的步驟，又，接合前述諸金屬層的步驟包含有將所積層之前 述3個以上之基體的前述第2金屬一起加熱的步驟。
  8. 如請求項1或2之基體之接合方法，其中前述第2金屬比起前述第1金屬，標準電極電位更高。
  9. 如請求項1或2之基體之接合方法，其中前述多孔質材料包含有高融點金屬與形成於前述高融點金屬之表面的前述第1金屬。
  10. 如請求項1或2之基體之接合方法，其中前述多孔質材料包含有絶緣體與形成於前述絶緣體之表面的前述第1金屬。
TW103126218A 2013-11-29 2014-07-31 基體之接合方法 TWI605740B (zh)

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