JPWO2015079582A1 - 基体の接合方法 - Google Patents
基体の接合方法 Download PDFInfo
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- JPWO2015079582A1 JPWO2015079582A1 JP2015550525A JP2015550525A JPWO2015079582A1 JP WO2015079582 A1 JPWO2015079582 A1 JP WO2015079582A1 JP 2015550525 A JP2015550525 A JP 2015550525A JP 2015550525 A JP2015550525 A JP 2015550525A JP WO2015079582 A1 JPWO2015079582 A1 JP WO2015079582A1
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- metal
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- General Physics & Mathematics (AREA)
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Abstract
Description
12、22 金属層
14、24 電極
32、33 粉体
34 金属層
45 合金層
Claims (10)
- 複数の基体上にそれぞれ形成された金属層同士を第1金属を含む多孔質体を介して対向させる工程と、
前記多孔質体の表面の前記第1金属を第2金属に置換する工程と、
前記第2金属を加熱することにより、前記金属層同士を接合する工程と、
を含むことを特徴とする基体の接合方法。 - 前記第1金属を前記第2金属に置換する工程は、置換めっき法を用いることを特徴とする請求項1記載の基体の接合方法。
- 前記多孔質体は、複数の粉体であることを特徴とする請求項1または2記載の基体の接合方法。
- 前記複数の粉体を前記金属層の少なくとも一方の表面に固着させる工程を含むことを特徴とする請求項3記載の基体の接合方法。
- 前記第1金属を前記第2金属に置換する工程は、前記多孔質体の内部を前記第2金属に置換しないことを特徴とする請求項1から4のいずれか一項記載の基体の接合方法。
- 前記金属層同士を接合する工程は、前記多孔質体の内部の前記第1金属と前記第2金属とを合金化する工程を含むことを特徴とする請求項5記載の基体の接合方法。
- 前記対向させる工程は、3以上の前記基体を積層させる工程を含み、
前記金属層同士を接合する工程は、積層された前記3以上の基体の前記第2金属を一括して加熱する工程を含むことを特徴とする請求項1から6のいずれか一項記載の基体の接合方法。 - 前記第2金属は前記第1金属より標準電極電位が高いことを特徴とする請求項1から7のいずれか一項記載の基体の接合方法。
- 前記多孔質体は、高融点金属と前記高融点金属の表面に形成された前記第1金属を含むことを特徴とする請求項1から8のいずれか一項記載の基体の接合方法。
- 前記多孔質体は、絶縁体と前記絶縁体の表面に形成された前記第1金属を含むことを特徴とする請求項1から9のいずれか一項記載の基体の接合方法。
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PCT/JP2013/082267 WO2015079582A1 (ja) | 2013-11-29 | 2013-11-29 | 基体の接合方法 |
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JPH0536306A (ja) * | 1991-07-26 | 1993-02-12 | Sekisui Fine Chem Kk | 導電性微粒子、電極接続構造体及びその製造方法 |
JP2008172215A (ja) * | 2005-03-29 | 2008-07-24 | Matsushita Electric Ind Co Ltd | フリップチップ実装体及びその実装装置並びにバンプ形成装置 |
JP2009094545A (ja) * | 2002-12-27 | 2009-04-30 | Fujitsu Ltd | 半導体装置の製造方法 |
WO2013069798A1 (ja) * | 2011-11-11 | 2013-05-16 | 住友ベークライト株式会社 | 半導体装置の製造方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0536306A (ja) * | 1991-07-26 | 1993-02-12 | Sekisui Fine Chem Kk | 導電性微粒子、電極接続構造体及びその製造方法 |
JP2009094545A (ja) * | 2002-12-27 | 2009-04-30 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2008172215A (ja) * | 2005-03-29 | 2008-07-24 | Matsushita Electric Ind Co Ltd | フリップチップ実装体及びその実装装置並びにバンプ形成装置 |
WO2013069798A1 (ja) * | 2011-11-11 | 2013-05-16 | 住友ベークライト株式会社 | 半導体装置の製造方法 |
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TWI605740B (zh) | 2017-11-11 |
WO2015079582A1 (ja) | 2015-06-04 |
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