TWI604470B - Conductive film for touch panel - Google Patents

Conductive film for touch panel Download PDF

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Publication number
TWI604470B
TWI604470B TW102116298A TW102116298A TWI604470B TW I604470 B TWI604470 B TW I604470B TW 102116298 A TW102116298 A TW 102116298A TW 102116298 A TW102116298 A TW 102116298A TW I604470 B TWI604470 B TW I604470B
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Taiwan
Prior art keywords
conductive film
touch panel
panel according
mesh
protruding portion
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TW102116298A
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Chinese (zh)
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TW201403636A (en
Inventor
栗城匡志
橋本明裕
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富士軟片股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/02Layer formed of wires, e.g. mesh
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073Shielding materials
    • H05K9/0094Shielding materials being light-transmitting, e.g. transparent, translucent
    • H05K9/0096Shielding materials being light-transmitting, e.g. transparent, translucent for television displays, e.g. plasma display panel
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/20Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202Conductive
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/20Displays, e.g. liquid crystal displays, plasma displays
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display

Description

觸控面板用導電性膜 Conductive film for touch panel

本發明是有關於一種可抑制莫爾紋(moire)的產生的導電性膜。 The present invention relates to a conductive film which can suppress the generation of moiré.

近來,作為設置於顯示裝置上的導電性膜,受到矚目的有用於觸控面板(touch panel)的導電性膜。觸控面板主要應用於個人數位助理(personal digital assistant,PDA)或行動電話等的小尺寸設備中,但考慮推進在電腦用顯示器等中應用的大尺寸化。 Recently, as a conductive film provided on a display device, a conductive film for a touch panel has been attracting attention. The touch panel is mainly used in a small-sized device such as a personal digital assistant (PDA) or a mobile phone, but it is considered to promote the large-size application in a computer display or the like.

在此種未來的動向中,現有的電極由於使用氧化銦錫(Indium Tin Oxide,ITO),因此隨著電阻變大、應用尺寸變大,而存在電極間的電流的傳遞速度變慢,響應速度(自接觸指尖後至檢測該位置為止的時間)變慢的問題。 In such future trends, since the existing electrodes use Indium Tin Oxide (ITO), the current transfer rate is slower and the response speed is slower as the electric resistance becomes larger and the application size becomes larger. The problem of slowing down from the time of touching the fingertip to detecting the position.

因此認為,藉由將排列多個由金屬製細線(金屬細線)構成的格子而構成電極,而降低表面電阻。作為形成金屬細線的方法,例如可列舉日本專利特開2004-221564號公報。 Therefore, it is considered that the surface resistance is lowered by arranging a plurality of lattices made of metal thin wires (metal thin wires) to form electrodes. As a method of forming a thin metal wire, for example, JP-A-2004-221564 can be cited.

在將排列多個此種藉由金屬細線所得的格子而成的導電性膜配置於顯示裝置的顯示面板上時,有因與顯示裝置的畫素陣列(array)圖案的干涉而產生莫爾紋的情況。作為降低此種莫 爾紋的方法,先前提出了在格子的交叉部形成莫爾紋抑制部(參照日本專利特開2008-282924號公報)、或在格子的開口部中在連結交叉部的線上形成莫爾紋抑制部的方法(參照日本專利特開2008-306177號公報)。 When a conductive film in which a plurality of such lattices obtained by thin metal wires are arranged is disposed on a display panel of a display device, moiré is generated by interference with a pixel pattern of the display device. Case. As to reduce this kind of Mo In the method of forming a pattern, it has been proposed to form a moiré suppressing portion at the intersection of the lattice (see Japanese Patent Laid-Open Publication No. 2008-282924), or to form a moiré suppression on the line connecting the intersections in the opening of the lattice. The method of the part (refer to Japanese Patent Laid-Open Publication No. 2008-306177).

例如如上所述般,在使用金屬細線作為觸控面板的電極時,由於金屬細線由不透明的材料製作,因此透明性或視認性成為問題。將使用金屬細線作為電極的導電性膜置於顯示裝置的顯示面板上而使用時,在以下的2種模式中亦需要良好的視認性。 For example, as described above, when a thin metal wire is used as the electrode of the touch panel, since the fine metal wires are made of an opaque material, transparency or visibility is a problem. When a conductive film using a metal thin wire as an electrode is placed on a display panel of a display device, it is required to have good visibility in the following two modes.

第1模式是:在使顯示裝置點亮、顯示時,難以視認金屬細線,可見光透射率高,且難以產生由顯示裝置的畫素週期(例如液晶顯示器的黑色矩陣圖案)與導電圖案的光學干涉所產生的莫爾紋等雜訊。 In the first mode, when the display device is turned on and displayed, it is difficult to visually recognize the thin metal wires, and the visible light transmittance is high, and it is difficult to cause optical interference between the pixel period of the display device (for example, the black matrix pattern of the liquid crystal display) and the conductive pattern. Moiré and other noise generated.

第2模式是:在將顯示裝置熄滅成為黑畫面,藉由螢光燈、太陽光、發光二極體(light-emitting diode,LED)光等的外界光的狀態觀察時,難以視認金屬細線。 In the second mode, when the display device is turned off to be a black screen and the external light such as a fluorescent lamp, sunlight, or light-emitting diode (LED) light is observed, it is difficult to visually recognize the thin metal wires.

日本專利特開2008-282924號公報中所記載的構成中,由於在交叉部形成金屬層而使交叉部的面積變大,因此格子的交叉部容易變得顯眼,而在視認性方面不利。日本專利特開2008-306177號公報中所記載的構成中,由於在開口部形成金屬層,因此有開口率降低、透明性降低的擔憂。 In the configuration described in Japanese Laid-Open Patent Publication No. 2008-282924, since the metal layer is formed at the intersection portion and the area of the intersection portion is increased, the intersection portion of the lattice is likely to be conspicuous, which is disadvantageous in terms of visibility. In the configuration described in Japanese Laid-Open Patent Publication No. 2008-306177, since the metal layer is formed in the opening portion, there is a concern that the aperture ratio is lowered and the transparency is lowered.

本發明是考慮此種課題而完成,目的是提供一種導電性 膜,其即便在排列多個由金屬細線構成的格子而構成例如觸控面板等的電極的情況下,亦可降低莫爾紋的產生,並且難以視認金屬細線,且可確保高的透明性。 The present invention has been completed in consideration of such a problem, and aims to provide an electrical conductivity. In the case of arranging a plurality of electrodes made of thin metal wires to form an electrode such as a touch panel, the film can reduce the occurrence of moiré, and it is difficult to visually recognize the fine metal wires and ensure high transparency.

[1]本發明的導電性膜具有由金屬細線構成的導電部與開口部,其特徵在於:上述導電部具有因多條上述金屬細線所形成的交點,在上述金屬細線上、且上述交點以外的部分配置有突出部。 [1] The conductive film of the present invention has a conductive portion and an opening portion made of a thin metal wire, wherein the conductive portion has an intersection formed by a plurality of the thin metal wires, and the metal thin wire is outside the intersection The part is configured with a protrusion.

藉此,成為在金屬細線上配置有以上述交點為中心的交叉部、及以金屬細線與突出部的交點為中心的模擬性交叉部的形態,因此交叉部的排列變得不規則,不會集中於特定的空間頻率。其結果是,即便將導電性膜設置於例如顯示裝置的顯示面板上,亦不會產生與畫素陣列圖案的干涉,並可降低莫爾紋的產生。 As a result, an intersection portion centering on the intersection and a dummy intersection portion centering on the intersection of the thin metal wire and the protruding portion are disposed on the thin metal wire. Therefore, the arrangement of the intersection portion is irregular and does not occur. Focus on specific spatial frequencies. As a result, even if the conductive film is provided on, for example, a display panel of a display device, interference with the pixel array pattern does not occur, and generation of moiré can be reduced.

即,在將導電性膜設置於顯示面板上,使用由金屬細線構成的導電部作為例如觸控面板等的電極的情況下或用作電磁波屏蔽過濾器的情況下,亦可降低莫爾紋的產生,並且難以視認金屬細線,且可確保高的透明性。 In other words, when the conductive film is provided on the display panel and the conductive portion made of the thin metal wire is used as an electrode such as a touch panel or when it is used as an electromagnetic wave shielding filter, the moiré can be reduced. Produced, and it is difficult to visualize fine metal wires, and high transparency can be ensured.

[2]本發明中,上述導電部與上述開口部的組合形狀可為篩孔(mesh)形狀。 [2] In the invention, the combined shape of the conductive portion and the opening portion may be a mesh shape.

[3]此時,上述突出部較佳為在構成上述篩孔形狀的多條邊中,在至少1條邊、且不與上述篩孔形狀的交點重疊的位置,與上述1條邊交叉而配置。 [3] In this case, it is preferable that the protruding portion is disposed so as to intersect with the one side at a position where at least one of the plurality of sides constituting the mesh shape overlaps the intersection of the mesh shapes.

[4]而且,上述突出部與上述1條邊交叉而延伸配置,上 述突出部的形狀可為以上述延伸方向為長軸的線段形狀、橢圓形狀、菱形形狀、平行四邊形形狀或多角形狀。 [4] Further, the protruding portion is arranged to extend across the one side, and the upper portion is extended The shape of the protruding portion may be a line segment shape, an elliptical shape, a rhombic shape, a parallelogram shape or a polygonal shape in which the extending direction is a long axis.

[5]而且,上述突出部可為以上述延伸方向為長軸的線段形狀。 [5] Further, the protruding portion may have a line segment shape in which the extending direction is a long axis.

[6]此時,較佳為與上述1條邊交叉的其他邊、與上述突出部的上述長軸大致平行。 [6] In this case, it is preferable that the other side crossing the one side is substantially parallel to the long axis of the protruding part.

[7]並且,在將上述1條邊的寬度設為Wa、將上述1條邊的長度設為La、將上述突出部的延伸方向的長度設為Lb時,較佳為Wa<Lb≦La。 [7] When the width of the one side is Wa, the length of the one side is La, and the length of the protruding portion in the extending direction is Lb, Wa<Lb≦La is preferable.

[8]此時,較佳為Lb≧2×Wa且Lb≦La/2。 [8] At this time, it is preferable that Lb ≧ 2 × Wa and Lb ≦ La / 2.

[9]並且,在數值規定中,較佳為5μm≦Lb≦100μm。 [9] Further, in the numerical specification, it is preferably 5 μm ≦ Lb ≦ 100 μm.

[10]並且,在將上述1條邊的寬度設為Wa、將上述突出部的線寬設為Wb時,較佳為0.995×Wa≦Wb≦3×Wa。 [10] Further, when the width of the one side is Wa and the line width of the protruding portion is Wb, it is preferably 0.995 × Wa ≦ Wb ≦ 3 × Wa.

[11]而且,在將自上述篩孔形狀的交點至上述1條邊上的上述突出部的中心位置為止的距離設為Da、將上述1條邊的長度設為La時,較佳為 0.1×La≦Da≦0.9×La。 [11] Further, when the distance from the intersection of the mesh shape to the center position of the protruding portion on the one side is Da, and the length of the one side is La, it is preferably 0.1 × La ≦ Da ≦ 0.9 × La.

[12]上述突出部的線寬較佳為30μm以下。線寬更佳為10μm以下,尤佳為7μm以下。 [12] The line width of the above-mentioned protruding portion is preferably 30 μm or less. The line width is more preferably 10 μm or less, and particularly preferably 7 μm or less.

[13]上述1條邊的長度較佳為50μm以上、900μm以下。長度更佳為50μm以上、600μm以下,尤佳為50μm以上、500μm以下。 [13] The length of the one side is preferably 50 μm or more and 900 μm or less. The length is more preferably 50 μm or more and 600 μm or less, and particularly preferably 50 μm or more and 500 μm or less.

[14]另外,較佳為上述導電部具有包含多個上述篩孔形狀的篩孔圖案、多個上述突出部相對於上述篩孔圖案而隨機地配置。 [14] Further, it is preferable that the conductive portion has a mesh pattern including a plurality of mesh shapes, and the plurality of protruding portions are randomly arranged with respect to the mesh pattern.

[15]此時,構成上述篩孔圖案的上述多個篩孔形狀中,未配置上述突出部的篩孔形狀可隨機地存在。 [15] At this time, among the plurality of mesh shapes constituting the mesh pattern, the mesh shape in which the protruding portion is not disposed may be randomly present.

[16]構成上述篩孔圖案的上述多個篩孔形狀中,上述突出部相對於配置有上述突出部的1個以上篩孔形狀的配置位置可為隨機。 [16] In the plurality of mesh shapes constituting the mesh pattern, the arrangement positions of the protruding portions with respect to one or more mesh shapes in which the protruding portions are arranged may be random.

[17]配置有上述突出部的上述1個以上篩孔形狀中,在多條邊上配置有上述突出部的篩孔形狀中,上述突出部在上述多條邊上的配置位置可為隨機。 [17] Among the one or more mesh shapes in which the protruding portions are arranged, in a mesh shape in which the protruding portions are arranged on a plurality of sides, the arrangement positions of the protruding portions on the plurality of sides may be random.

[18]在自上述篩孔形狀的1個交點呈放射狀延伸的多條邊上分別配置的上述突出部中,至少1個上述突出部自上述1個交點至中心位置為止的距離可與其他不同。 [18] Among the protruding portions respectively disposed on a plurality of sides radially extending from one intersection of the mesh shape, at least one of the protruding portions may have a different distance from the one intersection to the center position .

[19]鄰接的邊的分別配置的上述突出部,距分別對應的交點的距離可不同。 [19] The above-mentioned protruding portions respectively disposed adjacent to the sides may have different distances from the corresponding intersections.

[20]另外,在將上述邊的條數設為Na、將上述突出部的個數設為Nb、將上述突出部的配置率設為(Nb/Na)×100%時,上述配置率較佳為10%以上、100%以下。 [20] When the number of the above-mentioned sides is Na, the number of the protruding portions is Nb, and the arrangement ratio of the protruding portions is (Nb/Na) × 100%, the arrangement ratio is higher. Good is 10% or more and 100% or less.

[21]上述金屬細線的線寬較佳為30μm以下。線寬更佳為10μm以下,尤佳為7μm以下。下限值為0.1μm以上。 [21] The line width of the above fine metal wires is preferably 30 μm or less. The line width is more preferably 10 μm or less, and particularly preferably 7 μm or less. The lower limit value is 0.1 μm or more.

[22]開口率較佳為90%以上。 [22] The aperture ratio is preferably 90% or more.

如以上所說明般,根據本發明的導電性膜,在排列多個由金屬細線構成的格子而構成例如觸控面板等的電極時,亦可降低莫爾紋的產生,並且難以視認金屬細線,且可確保高的透明性。 As described above, in the conductive film of the present invention, when a plurality of electrodes made of thin metal wires are arranged to form an electrode such as a touch panel, the generation of moiré can be reduced, and it is difficult to visually recognize the thin metal wires. It also ensures high transparency.

上述目的、特徵及優點根據參照隨附的圖式而說明的以下的實施方式的說明,應可容易地理解。 The above described objects, features, and advantages of the invention will be apparent from the description of the appended claims.

10‧‧‧導電性膜 10‧‧‧ Conductive film

10a、10b、10c‧‧‧導電膜 10a, 10b, 10c‧‧‧ conductive film

12‧‧‧基體 12‧‧‧ base

14‧‧‧導電部 14‧‧‧Electrical Department

16‧‧‧金屬細線 16‧‧‧Metal thin wire

16a‧‧‧第1金屬細線 16a‧‧‧1st metal thin line

16b‧‧‧第2金屬細線 16b‧‧‧2nd metal wire

18‧‧‧開口部 18‧‧‧ openings

18a、18b‧‧‧開口部 18a, 18b‧‧‧ openings

20‧‧‧篩孔圖案 20‧‧‧ mesh pattern

22、32‧‧‧交點 22, 32‧‧‧ intersection

24‧‧‧格子 24‧‧‧ lattice

26‧‧‧莫爾紋抑制部(突出部) 26‧‧‧ Moir suppression unit (protrusion)

26a‧‧‧第1突出部 26a‧‧‧1st protrusion

26b‧‧‧第2突出部 26b‧‧‧2nd protrusion

28‧‧‧邊 28‧‧‧ side

30、34‧‧‧交叉部 30, 34‧‧‧ intersection

36‧‧‧鹵化銀 36‧‧‧Brown silver

38‧‧‧明膠 38‧‧‧ gelatin

40‧‧‧銀鹽感光層 40‧‧‧ Silver salt photosensitive layer

42‧‧‧顯影銀 42‧‧‧Developing silver

44‧‧‧金屬銀部 44‧‧‧Metal and Silver Department

46‧‧‧透光性部 46‧‧‧Transparent Department

48‧‧‧導電性金屬 48‧‧‧ Conductive metal

50‧‧‧銅箔 50‧‧‧ copper foil

52‧‧‧光阻膜 52‧‧‧Photoresist film

54‧‧‧抗蝕劑圖案 54‧‧‧resist pattern

56‧‧‧膏 56‧‧‧ cream

58‧‧‧鍍金屬 58‧‧‧metal plating

La、Lb‧‧‧長度 La, Lb‧‧‧ length

Lb1、Lb2‧‧‧突出長度 Lb1, Lb2‧‧‧ protruding length

Da‧‧‧距離 Da‧‧‧Distance

Wa、Wb‧‧‧線寬 Wa, Wb‧‧‧ line width

θa、θb、θ1、θ2‧‧‧角 Θa, θb, θ1, θ2‧‧‧ corner

圖1是表示本實施方式的導電性膜的一例的平面圖。 FIG. 1 is a plan view showing an example of a conductive film of the present embodiment.

圖2是省略一部分導電性膜而表示的剖面圖。 Fig. 2 is a cross-sectional view showing a part of a conductive film omitted.

圖3是將導電性膜的一例進行一部分放大而表示的平面圖。 3 is a plan view showing an enlarged portion of an example of a conductive film.

圖4(圖4A~圖4E)是表示本實施方式的導電性膜的製造方法的一例的流程圖(process chart)。 4 (FIG. 4A to FIG. 4E) is a flowchart showing an example of a method of producing a conductive film according to the present embodiment.

圖5A及圖5B是表示本實施方式的導電性膜的製造方法的其他例的流程圖。 5A and 5B are flowcharts showing another example of the method for producing the conductive film of the embodiment.

圖6A及圖6B是表示本實施方式的導電性膜的製造方法的進一步其他例的流程圖。 6A and 6B are flowcharts showing still another example of the method for producing the conductive film of the embodiment.

圖7是表示本實施方式的導電性膜的製造方法的進一步其他例的流程圖。 FIG. 7 is a flowchart showing still another example of the method for producing the conductive film of the embodiment.

圖8是表示第1變形例的導電膜的一例的平面圖。 8 is a plan view showing an example of a conductive film according to a first modification.

圖9是表示第2變形例的導電膜的一例的平面圖。 FIG. 9 is a plan view showing an example of a conductive film according to a second modification.

圖10是表示第3變形例的導電膜的一例的平面圖。 FIG. 10 is a plan view showing an example of a conductive film according to a third modification.

以下,一邊參照圖1~圖10,一邊對本發明的導電性膜的實施方式例進行說明。另外,本說明書中表示數值範圍的「~」,以包含其前後所記載的數值作為下限值及上限值的含義來使用。 Hereinafter, an embodiment of the conductive film of the present invention will be described with reference to Figs. 1 to 10 . In addition, the "~" which shows the numerical range in this specification is used with the meaning of the numerical value of the above-mentioned before and after it as a lower-

本實施方式的導電性膜10如圖1及圖2所示般,具有透明性基體12(參照圖2)、及形成於基體12的一個主面的導電部14。導電部14具有藉由金屬製細線(以下記為金屬細線16)與開口部18所形成的篩孔圖案20。金屬細線16例如由金(Au)、銀(Ag)或銅(Cu)構成。 As shown in FIGS. 1 and 2, the conductive film 10 of the present embodiment has a transparent substrate 12 (see FIG. 2) and a conductive portion 14 formed on one main surface of the substrate 12. The conductive portion 14 has a mesh pattern 20 formed by a metal thin wire (hereinafter referred to as a thin metal wire 16) and an opening portion 18. The metal thin wires 16 are made of, for example, gold (Au), silver (Ag), or copper (Cu).

具體而言,導電部14如圖1所示般具有篩孔圖案20,該篩孔圖案20是向第1方向(x方向)延伸且朝第2方向(圖1中為y方向)排列的多條第1金屬細線16a、與向第2方向延伸且朝第1方向排列的多條第2金屬細線16b,分別交叉而形成。篩孔圖案20具有藉由多條第1金屬細線16a與多條第2金屬細線16b所形成的多個交點22。 Specifically, the conductive portion 14 has a mesh pattern 20 as shown in FIG. 1 , and the mesh pattern 20 extends in the first direction (x direction) and is arranged in the second direction (y direction in FIG. 1 ). The strip first metal thin wires 16a are formed so as to intersect with the plurality of second metal thin wires 16b extending in the second direction and arranged in the first direction. The mesh pattern 20 has a plurality of intersections 22 formed by a plurality of first metal thin wires 16a and a plurality of second metal thin wires 16b.

另外,篩孔圖案20的1個篩孔形狀、即1個開口部18、與包圍該1個開口部18的4條金屬細線16的組合形狀(以下記為格子24),如圖1所示般可為正方形,亦可為菱形。此外,還可為正六角形等多角形狀。另外,除了使格子24的一邊的形狀為直線狀外,亦可為彎曲形狀,還可為圓弧狀。在形成為圓弧狀時,例如關於相對向的2邊,可向外方形成凸的圓弧狀,關於另外相對向的2邊,可向內方形成凸的圓弧狀。另外,亦可使各邊的形狀形成為向外方凸的圓弧與向內方凸的圓弧連續的波狀線形狀。當然還可使各邊的形狀形成為正弦曲線。 Further, the mesh shape of the mesh pattern 20, that is, the combined shape of one opening 18 and the four thin metal wires 16 surrounding the one opening 18 (hereinafter referred to as a lattice 24) is as shown in FIG. It can be square or rhombus. In addition, it may have a polygonal shape such as a regular hexagon. Further, in addition to the shape of one side of the lattice 24 being linear, it may be a curved shape or an arc shape. When it is formed in an arc shape, for example, the two sides facing each other may have a convex arc shape outward, and the two opposite sides may form a convex arc shape inward. Further, the shape of each side may be formed into a wavy line shape in which an outwardly convex circular arc and an inwardly convex circular arc are continuous. It is of course also possible to form the shape of each side as a sinusoid.

並且,本實施方式中,如圖1所示般,在金屬細線16上、且交點22以外的部分配置(形成)有莫爾紋抑制部26(突出部)。具體而言,莫爾紋抑制部26是在構成格子24的多條邊28中在至少1條邊28、且不與格子24的交點22重疊的位置上,與1條邊28交叉而延伸配置。莫爾紋抑制部26的形狀在圖1中呈現以延伸方向為長軸的線段形狀。當然,此外亦可為以延伸方向為長軸的橢圓形狀、菱形形狀、平行四邊形形狀或多角形狀。莫爾紋抑制部26可藉由與金屬細線16相同的金屬材料形成,亦可藉由其他金屬材料形成。 In the present embodiment, as shown in FIG. 1, the moiré suppressing portion 26 (projecting portion) is disposed (formed) on the metal thin wire 16 and at a portion other than the intersection 22 . Specifically, the moiré suppressing portion 26 is disposed so as to extend across the one side 28 at a position where at least one side 28 of the plurality of sides 28 constituting the lattice 24 overlaps with the intersection 22 of the lattice 24 . The shape of the moiré suppressing portion 26 is in the shape of a line segment in which the extending direction is the long axis in FIG. Of course, it may be an elliptical shape, a rhombic shape, a parallelogram shape or a polygonal shape in which the extending direction is a long axis. The moiré suppressing portion 26 may be formed of the same metal material as the metal thin wires 16 or may be formed of other metal materials.

另外,多個莫爾紋抑制部26相對於篩孔圖案20而隨機地配置。「隨機地配置」的含義是指至少下述(a)~(e)中的1個以上。 Further, the plurality of moiré suppressing portions 26 are randomly arranged with respect to the mesh pattern 20 . The meaning of "randomly arranged" means at least one of the following (a) to (e).

(a)構成篩孔圖案20的多個格子24中,未配置莫爾紋抑制 部26的格子24隨機地存在。 (a) Among the plurality of lattices 24 constituting the mesh pattern 20, moiré suppression is not disposed The grids 24 of the sections 26 are randomly present.

(b)構成篩孔圖案20的多個格子24中,莫爾紋抑制部26相對於配置有莫爾紋抑制部26的1個以上格子24的配置位置為隨機。 (b) Among the plurality of lattices 24 constituting the mesh pattern 20, the arrangement positions of the moiré suppressing portions 26 with respect to the one or more lattices 24 in which the moiré suppressing portions 26 are disposed are random.

(c)配置有莫爾紋抑制部26的1個以上格子24中,在多條邊28上配置有莫爾紋抑制部26的格子24中,莫爾紋抑制部26在多條邊28上的配置位置為隨機。 (c) Among the one or more lattices 24 in which the moiré suppression unit 26 is disposed, the arrangement of the moiré suppression unit 26 on the plurality of sides 28 in the lattice 24 in which the moiré suppression unit 26 is disposed on the plurality of sides 28 The location is random.

(d)在自格子24的1個交點22呈放射狀延伸的多條邊28上分別配置有莫爾紋抑制部26的情況下,至少1個莫爾紋抑制部26中,自1個交點22至中心位置為止的距離與其他不同。 (d) When the moiré suppressing portion 26 is disposed on each of the plurality of sides 28 extending radially from the one intersection 22 of the lattice 24, at least one moiré suppressing portion 26 is from one intersection 22 The distance to the center position is different from the others.

(e)在鄰接的邊28上分別配置有莫爾紋抑制部26的情況下,距分別對應的交點22的距離不同。 (e) When the moiré suppression unit 26 is disposed on each of the adjacent sides 28, the distances from the corresponding intersection points 22 are different.

如此,藉由在金屬細線16上、且交點22以外的部分配置線段形狀的莫爾紋抑制部26,而成為在篩孔圖案20中配置有以格子24本來的交點22為中心的十字狀交叉部30、及以格子24的邊28與莫爾紋抑制部26的交點32為中心的模擬性十字狀交叉部34的形態,且由於隨機地配置莫爾紋抑制部26,因此交叉部30及交叉部34的排列變得不規則,而不會集中於特定的空間頻率。其結果是,即便將本實施方式的導電性膜10設置於例如顯示裝置的顯示面板上,亦不會產生與畫素陣列圖案的干涉,並且可降低莫爾紋的產生。 By arranging the moiré suppressing portions 26 of the line shape on the metal thin wires 16 and at the portions other than the intersection 22, the cross-over intersection centering on the intersection 22 of the lattice 24 is disposed in the mesh pattern 20. In the form of the analog cross-shaped portion 34 centering on the intersection 32 between the side 28 of the lattice 24 and the moiré suppressing portion 26, and the moiré suppressing portion 26 is randomly arranged, the intersecting portion 30 and The arrangement of the intersections 34 becomes irregular and does not concentrate on a particular spatial frequency. As a result, even if the conductive film 10 of the present embodiment is provided on, for example, a display panel of a display device, interference with the pixel array pattern does not occur, and generation of moiré can be reduced.

即,在將導電性膜10設置於顯示面板上而排列多個藉 由金屬細線16所形成的格子24而用作例如觸控面板等的電極的情況下、或用作電磁波屏蔽過濾器的情況下,亦可降低莫爾紋的產生,並且難以視認金屬細線16,且可確保高的透明性。 That is, the conductive film 10 is placed on the display panel to arrange a plurality of borrowings. When the lattice 24 formed of the thin metal wires 16 is used as an electrode such as a touch panel or in the case of being used as an electromagnetic wave shielding filter, the generation of moiré can be reduced, and the thin metal wires 16 are difficult to be visually recognized. It also ensures high transparency.

並且,如圖3所示般,在將格子24的1條邊28的寬度設為Wa、將1條邊28的長度(2個交點22間的長度)設為La、將莫爾紋抑制部26的延伸方向的長度設為Lb時,較佳為Wa<Lb≦La。 In addition, as shown in FIG. 3, the width of one side 28 of the lattice 24 is Wa, the length of one side 28 (the length between two intersections 22) is La, and the moiré suppressing portion 26 is provided. When the length in the extending direction is Lb, Wa<Lb≦La is preferable.

在數值規定中,較佳為5μm≦Lb≦100μm。 In the numerical specification, it is preferably 5 μm ≦ Lb ≦ 100 μm.

長度Lb的下限較佳為2×Wa以上,更佳為3×Wa以上,尤佳為4×Wa以上。長度Lb的上限較佳為La以下,更佳為La/2以下,尤佳為La/3以下,特佳為La/4以下。 The lower limit of the length Lb is preferably 2 × Wa or more, more preferably 3 × Wa or more, and particularly preferably 4 × Wa or more. The upper limit of the length Lb is preferably La or less, more preferably La/2 or less, still more preferably La/3 or less, and particularly preferably La/4 or less.

另外,在莫爾紋抑制部26的一個開口部18a上的第1突出部26a的長度(突出長度Lb1)、與在另一個開口部18b上的第2突出部26b的長度(突出長度Lb2),可相同亦可不同。此時,各突出長度Lb1及突出長度Lb2的下限,較佳為Wa以上,更佳為1.5×Wa以上,尤佳為2×Wa以上。各突出長度Lb1及突出長度Lb2的上限,較佳為La/2以下,更佳為La/4以下,尤佳為La/6以下,特佳為La/8以下。 In addition, the length (protrusion length Lb1) of the first protrusion 26a on one opening 18a of the moiré suppression unit 26 and the length of the second protrusion 26b on the other opening 18b (protrusion length Lb2) , can be the same or different. In this case, the lower limit of each of the protruding length Lb1 and the protruding length Lb2 is preferably Wa or more, more preferably 1.5 × Wa or more, and particularly preferably 2 × Wa or more. The upper limit of each of the protruding length Lb1 and the protruding length Lb2 is preferably La/2 or less, more preferably La/4 or less, still more preferably La/6 or less, and particularly preferably La/8 or less.

若莫爾紋抑制部26的延伸方向的長度Lb過短,則無法形成模擬性十字狀交叉部34,並且無法獲得降低莫爾紋的產生的 效果。若長度Lb過長,則開口率降低,而無法確保高的透明性。這對於各突出長度Lb1及突出長度Lb2而言亦相同。 When the length Lb of the Moiré suppression portion 26 in the extending direction is too short, the pseudo cross-shaped portion 34 cannot be formed, and the generation of moiré can not be obtained. effect. If the length Lb is too long, the aperture ratio is lowered, and high transparency cannot be ensured. This is also the same for each of the protruding length Lb1 and the protruding length Lb2.

莫爾紋抑制部26的線寬Wb較佳為30μm以下。線寬更佳為10μm以下,尤佳為7μm以下。此時,格子24的1條邊28的寬度Wa、與莫爾紋抑制部26的線寬Wb的關係較佳為0.995×Wa≦Wb≦3.000×Wa。 The line width Wb of the moiré suppressing portion 26 is preferably 30 μm or less. The line width is more preferably 10 μm or less, and particularly preferably 7 μm or less. At this time, the relationship between the width Wa of one side 28 of the lattice 24 and the line width Wb of the moiré suppressing portion 26 is preferably 0.995 × Wa ≦ Wb ≦ 3.000 × Wa.

格子24的1條邊28的寬度Wa、與莫爾紋抑制部26的線寬Wb的關係更佳為0.995×Wa≦Wb≦2.500×Wa,尤佳為0.995×Wa≦Wb≦1.500×Wa。 The relationship between the width Wa of one side 28 of the lattice 24 and the line width Wb of the moiré suppressing portion 26 is preferably 0.995 × Wa ≦ Wb ≦ 2.500 × Wa, and particularly preferably 0.995 × Wa ≦ Wb ≦ 1.500 × Wa.

格子24的1條邊28的寬度Wa、與莫爾紋抑制部26的線寬Wb的關係特佳為Wb=Wa。 The relationship between the width Wa of one side 28 of the lattice 24 and the line width Wb of the moiré suppressing portion 26 is particularly preferably Wb = Wa.

若莫爾紋抑制部26的線寬Wb過小,則實質上不會成為模擬性十字狀交叉部34,而無法獲得降低莫爾紋的產生的效果。若線寬Wb過大,則開口率降低,而無法確保高的透明性。 When the line width Wb of the Moiré suppressing portion 26 is too small, the pseudo cross-shaped portion 34 is not substantially formed, and the effect of reducing the occurrence of moiré cannot be obtained. If the line width Wb is too large, the aperture ratio is lowered, and high transparency cannot be ensured.

另外較佳為,與配置有莫爾紋抑制部26的1條邊28交叉的另一邊、與該莫爾紋抑制部26的延伸方向(長軸)大致平行。所謂大致平行,是將上述1條邊28的延伸方向與莫爾紋抑制部26的延伸方向所成的角設為θ1、將上述1條邊28的延伸方向與上述另一條邊所成的角設為θ2時,為0°≦| θ1-θ2 |≦5°。若格子24的形狀為正方形或長方形,則較佳為上述1條邊28與莫爾紋抑制部26的延伸方向大致正交。藉此,可由莫爾紋抑制部26與1條邊28構成模擬性十字狀交叉部34。 Further, it is preferable that the other side intersecting with one side 28 on which the moiré suppressing portion 26 is disposed is substantially parallel to the extending direction (long axis) of the moiré suppressing portion 26. In the substantially parallel direction, an angle formed by the extending direction of the one side 28 and the extending direction of the moiré suppressing portion 26 is θ1, and an angle between the extending direction of the one side 28 and the other side is set to When θ2, it is 0°≦| θ1-θ2 |≦5°. When the shape of the lattice 24 is a square or a rectangle, it is preferable that the one side 28 is substantially perpendicular to the extending direction of the moiré suppressing portion 26. Thereby, the moiré suppressing portion 26 and the one side 28 constitute the pseudo cross-shaped portion 34.

當然,上述邊28的延伸方向與第1突出部26a的延伸方向所成的角| θa |、與上述邊28的延伸方向與第2突出部26b的延伸方向所成的角| θb |亦可不同。此時較佳為0°≦| θa-θ2 |≦5°、0°≦| θb-θ2 |≦5°。 Needless to say, the angle | θa | formed by the extending direction of the side 28 and the extending direction of the first protruding portion 26a, and the angle | θb | formed by the extending direction of the side 28 and the extending direction of the second protruding portion 26b may be different. At this time, it is preferably 0° ≦ | θa - θ2 | ≦ 5 °, 0 ° ≦ | θb - θ2 | ≦ 5 °.

另外,在將自格子24的交點22至1條邊28上的莫爾紋抑制部26的中心位置為止的距離設為Da、將1條邊28的長度設為La時,較佳為0.1×La≦Da≦0.9×La。 Further, when the distance from the center point of the moiré suppressing portion 26 on the intersection 22 to the one side 28 of the lattice 24 is Da, and the length of one side 28 is La, it is preferably 0.1 × La ≦. Da≦0.9×La.

若距離Da過小、或與1條邊28的長度La大致相同, 則莫爾紋抑制部26靠近格子24的交點22而配置,其結果,以格子24的交點22為中心的十字狀交叉部30的線寬變粗,而容易以所謂的粗線被視認。反之,若使距離Da的範圍比上述範圍窄,則隨機地配置的自由度變小。因此,較佳為使距離Da的範圍為上述範圍。 If the distance Da is too small, or is approximately the same as the length La of one side 28, Then, the moiré suppressing portion 26 is disposed close to the intersection 22 of the lattice 24, and as a result, the line width of the cross-shaped intersecting portion 30 centering on the intersection 22 of the lattice 24 is thick, and is easily visually recognized by a so-called thick line. On the other hand, if the range of the distance Da is made narrower than the above range, the degree of freedom of random arrangement becomes small. Therefore, it is preferable that the range of the distance Da is within the above range.

另外,在將篩孔圖案20的邊28的條數設為Na、將莫爾紋抑制部26的個數設為Nb、將莫爾紋抑制部26的配置率設為(Nb/Na)×100%時,配置率較佳為10%以上、100%以下。配置率100%表示各邊28上分別配置有1個莫爾紋抑制部26。 In addition, the number of the sides 28 of the mesh pattern 20 is Na, the number of the moiré suppressing portions 26 is Nb, and the arrangement ratio of the moiré suppressing portions 26 is (Nb/Na) × At 100%, the arrangement rate is preferably 10% or more and 100% or less. The arrangement rate of 100% indicates that one moiré suppressing portion 26 is disposed on each side 28, respectively.

若配置率過小,則會產生以下問題:篩孔圖案20中,未形成模擬性十字狀交叉部34的區域變寬,在該區域中,莫爾紋變得顯眼。若配置率過大,則開口率降低,而無法確保高的透明度。另外,反之,若使配置率的範圍比上述範圍窄,則隨機地配置的自由度變小。因此,較佳為使配置率的範圍為上述範圍。 If the arrangement rate is too small, the following problem occurs: in the mesh pattern 20, the region where the dummy cross-shaped portion 34 is not formed is widened, and in this region, the moiré becomes conspicuous. If the arrangement rate is too large, the aperture ratio is lowered, and high transparency cannot be ensured. On the other hand, if the range of the arrangement ratio is made narrower than the above range, the degree of freedom of random arrangement becomes small. Therefore, it is preferable that the range of the arrangement rate is in the above range.

此處,格子24的一邊28的長度La可選自50μm以上、900μm以下。長度La較佳為50μm以上、600μm以下,更佳為50μm以上、500μm以下。另外,金屬細線16的線寬Wa可選自30μm以下。線寬Wa較佳為10μm以下,更佳為7μm以下。線寬Wa的下限值為0.1μm以上。另外,導電性膜10的開口率較佳為90%以上。藉此可確保高的透明度。 Here, the length La of one side 28 of the lattice 24 may be selected from 50 μm or more and 900 μm or less. The length La is preferably 50 μm or more and 600 μm or less, and more preferably 50 μm or more and 500 μm or less. Further, the line width Wa of the metal thin wires 16 may be selected from 30 μm or less. The line width Wa is preferably 10 μm or less, more preferably 7 μm or less. The lower limit of the line width Wa is 0.1 μm or more. Further, the aperture ratio of the conductive film 10 is preferably 90% or more. This ensures high transparency.

接著,一邊參照圖4A~圖7,一邊對本實施方式的導電性膜10的製造方法的幾個例子進行說明。 Next, several examples of the method of manufacturing the conductive film 10 of the present embodiment will be described with reference to FIGS. 4A to 7 .

首先可列舉以下方法:將設置於基體12上的銀鹽感光層曝光,並進行顯影、定影(fixing),藉此由所形成的金屬銀部或金屬銀部及該金屬銀部所承載的導電性金屬形成篩孔圖案20及莫爾紋抑制部26。 First, a method of exposing a silver salt photosensitive layer provided on the substrate 12 to development and fixing, thereby conducting electricity by the formed metallic silver portion or metallic silver portion and the metallic silver portion may be mentioned. The metal forms the mesh pattern 20 and the moiré suppressing portion 26.

具體而言,如圖4A所示般,在基體12上塗佈將鹵化銀36(例如溴化銀粒子、氯溴化銀粒子或碘溴化銀粒子)混合於明膠38中而成的銀鹽感光層40。另外,圖4A~圖4C中,將鹵化銀36表記為「粒子」,但完全是為了幫助理解本發明而誇大表示,並非表示大小或濃度等。 Specifically, as shown in FIG. 4A, a silver salt obtained by mixing silver halide 36 (for example, silver bromide particles, silver chlorobromide particles or silver iodobromide particles) in gelatin 38 is applied to the substrate 12. Photosensitive layer 40. In addition, in FIGS. 4A to 4C, the silver halide 36 is referred to as "particles", but it is exaggerated to fully understand the present invention, and does not indicate size, concentration, or the like.

然後,如圖4B所示般,對銀鹽感光層40進行形成篩孔圖案20所需要的曝光。鹵化銀36若接受光能,則會感光而生成被稱為「潛像」的無法用肉眼觀察的微小的銀核。 Then, as shown in FIG. 4B, the silver salt photosensitive layer 40 is subjected to exposure required to form the mesh pattern 20. When silver halide 36 receives light energy, it generates light and generates a minute silver core which is called a "latent image" and cannot be observed with the naked eye.

然後,為了將潛像放大至可用肉眼觀察的可見化的圖像,而如圖4C所示般進行顯影處理。具體而言,將形成有潛像的銀鹽感光層40藉由顯影處理液(鹼性溶液與酸性溶液均有,但通常多數為鹼性溶液)進行顯影處理。該顯影處理是將鹵化銀粒子或自顯影液供給的銀離子藉由顯影液中被稱為顯影主藥(cardinal remedy)的還原劑,將潛像銀核作為觸媒核而還原成金屬銀,其結果將潛像銀核放大而形成可見化的銀圖像(顯影銀42)。 Then, in order to enlarge the latent image to the visible image which can be observed with the naked eye, development processing is performed as shown in Fig. 4C. Specifically, the silver salt photosensitive layer 40 on which the latent image is formed is subjected to development treatment by a developing treatment liquid (both an alkaline solution and an acidic solution, but usually an alkaline solution). In the development treatment, the silver ions supplied from the silver halide particles or the self-developing solution are reduced to metal silver by using the latent image silver core as a catalyst core by a reducing agent called a cardinal remedy in the developing solution. As a result, the latent image silver core is enlarged to form a visible silver image (developed silver 42).

在結束顯影處理後,在銀鹽感光層40中殘留可對光進行感光的鹵化銀36,因此為了將鹵化銀36除去,而如圖4D所示般藉由定影處理液(酸性溶液與鹼性溶液均有,但通常多數為酸 性溶液)進行定影。 After the development processing is finished, silver halide 36 which can sensitize light remains in the silver salt photosensitive layer 40, and therefore, in order to remove the silver halide 36, a fixing treatment liquid (acid solution and alkaline) is used as shown in FIG. 4D. All of the solutions, but usually mostly acid The solution is fixed.

藉由進行該定影處理,而在經曝光的部位形成金屬銀部44,在未曝光的部位僅殘留明膠38,而成為透光性部46。即,在基體12上形成金屬銀部44的金屬細線16與透光性部46的開口部18的組合的篩孔圖案20及莫爾紋抑制部26。 By performing this fixing process, the metallic silver portion 44 is formed at the exposed portion, and only the gelatin 38 remains in the unexposed portion, and the translucent portion 46 is formed. In other words, the mesh pattern 20 and the moiré suppressing portion 26 of the combination of the metal thin wires 16 of the metallic silver portion 44 and the opening portions 18 of the light transmitting portion 46 are formed on the base 12.

使用溴化銀作為鹵化銀36、藉由硫代硫酸鹽進行定影處理時的定影處理的反應式如以下所述。 The reaction formula of the fixing treatment when silver bromide is used as the silver halide 36 and the fixing treatment by the thiosulfate is as follows.

AgBr(固體)+2個S2O3離子 → Ag(S2O3)2(易水溶性錯合物) AgBr (solid) + 2 S 2 O 3 ions → Ag(S 2 O 3 ) 2 (easy water-soluble complex)

即,2個硫代硫酸根離子S2O3與明膠38中的銀離子(來自AgBr的銀離子),生成硫代硫酸銀錯合物。硫代硫酸銀錯合物由於水溶性高,因此會自明膠38中溶出。其結果,顯影銀42被定影成為金屬銀部44而殘留。 That is, two thiosulfate ions S 2 O 3 and silver ions (silver ions derived from AgBr) in gelatin 38 form a silver thiosulfate complex. The silver thiosulfate complex is eluted from gelatin 38 because of its high water solubility. As a result, the developed silver 42 is fixed to the metallic silver portion 44 and remains.

因此,顯影步驟是使還原劑與潛像反應而析出顯影銀42的步驟,定影步驟是將未成為顯影銀42的鹵化銀36溶出至水中的步驟。詳細內容欲參照T.H.詹姆斯,照相過程理論,第四版,麥克米倫出版公司,紐約,第15章,第438頁-第442頁,1997年(T.H.James,The Theory of the Photographic Process,4th ed.,Macmillan Publishing Co.,Inc,NY,Chapter15,pp.438-442.1977)。 Therefore, the developing step is a step of reacting the reducing agent with the latent image to precipitate the developed silver 42, and the fixing step is a step of eluting the silver halide 36 which is not the developed silver 42 into the water. For details, see TH James, Photographic Process Theory, Fourth Edition, Macmillan Publishing Company, New York, Chapter 15, page 438-page 442, 1997 (THJames, The Theory of the Photographic Process, 4th ed ., Macmillan Publishing Co., Inc, NY, Chapter 15, pp. 438-442.1977).

另外,如圖4E所示般,例如進行鍍敷處理(將無電鍍敷或電解鍍敷單獨使用或組合使用),而可僅於金屬銀部44上承載導電性金屬48而形成藉由金屬銀部44與導電性金屬48而成的 篩孔圖案20及莫爾紋抑制部26。 Further, as shown in FIG. 4E, for example, a plating treatment (either electroless plating or electrolytic plating alone or in combination) may be performed, and the conductive metal 48 may be carried only on the metallic silver portion 44 to form metal silver. The portion 44 and the conductive metal 48 The mesh pattern 20 and the moiré suppressing portion 26.

並且,藉由對銀鹽感光層40的曝光而使用的遮罩,可具有與篩孔圖案20、及在該篩孔圖案20的開口部18形成有莫爾紋抑制部26的圖案相對應的遮罩圖案。 Further, the mask used for exposing the silver salt photosensitive layer 40 may have a pattern corresponding to the mesh pattern 20 and the pattern in which the moiré suppressing portion 26 is formed in the opening portion 18 of the mesh pattern 20. Mask pattern.

或者,藉由對銀鹽感光層40的數位寫入曝光,而可對銀鹽感光層40曝光篩孔圖案20、及在該篩孔圖案20的開口部18形成有莫爾紋抑制部26的圖案。 Alternatively, the screen pattern 20 of the silver salt photosensitive layer 40 may be exposed by digitally writing and exposing the silver salt photosensitive layer 40, and the moiré suppressing portion 26 may be formed in the opening portion 18 of the mesh pattern 20. pattern.

作為其他製造方法,如圖5A所示般,例如將形成於基體12上的銅箔50上的光阻(photoresist)膜52進行曝光、顯影處理,而形成抗蝕劑圖案54,如圖5B所示般,藉由將自抗蝕劑圖案54露出的銅箔50蝕刻,而可形成篩孔圖案20及莫爾紋抑制部26。此時,在對光阻膜52進行曝光時所使用的遮罩,可具有與篩孔圖案20及形成有莫爾紋抑制部26的圖案相對應的遮罩圖案。 As another manufacturing method, as shown in FIG. 5A, for example, a photoresist film 52 formed on the copper foil 50 on the substrate 12 is exposed and developed to form a resist pattern 54, as shown in FIG. 5B. As shown, the mesh pattern 50 and the moiré suppressing portion 26 can be formed by etching the copper foil 50 exposed from the resist pattern 54. At this time, the mask used for exposing the photoresist film 52 may have a mask pattern corresponding to the mesh pattern 20 and the pattern in which the moiré suppressing portion 26 is formed.

或者,藉由對光阻膜52的數位寫入曝光,而可對光阻膜52曝光篩孔圖案20與形成有莫爾紋抑制部26的圖案。 Alternatively, the mesh pattern 20 and the pattern in which the moiré suppressing portion 26 is formed may be exposed to the photoresist film 52 by digitally writing and exposing the photoresist film 52.

另外,如圖6A所示般,在基體12上印刷包含金屬微粒子的膏56,並如圖6B所示般,在膏56上進行鍍金屬58,藉此可形成篩孔圖案20、及在該篩孔圖案20的開口部18形成有莫爾紋抑制部26的圖案。 Further, as shown in FIG. 6A, a paste 56 containing metal fine particles is printed on the substrate 12, and as shown in FIG. 6B, metal plating 58 is performed on the paste 56, whereby the mesh pattern 20 can be formed, and The opening portion 18 of the mesh pattern 20 is formed with a pattern of the moiré suppressing portion 26.

或者,如圖7所示般,可藉由網版印刷版或凹版印刷版,在基體12上印刷形成篩孔圖案20、及在該篩孔圖案20的開口部18形成有莫爾紋抑制部26的圖案。 Alternatively, as shown in FIG. 7, a mesh pattern 20 may be formed on the substrate 12 by a screen printing plate or a gravure printing plate, and a moiré suppressing portion may be formed in the opening portion 18 of the mesh pattern 20. 26 patterns.

或者,雖然未圖示,但亦可在基體12上使用鍍敷預處理材形成感光性被鍍敷層,然後進行曝光、顯影處理後實施鍍敷處理,藉此在曝光部及未曝光部分別形成金屬部及透光性部,而形成篩孔圖案20及莫爾紋抑制部26。另外,藉由進一步對金屬部實施物理顯影及/或鍍敷處理,而可使金屬部承載導電性金屬。 Alternatively, although not shown, a photosensitive plating layer may be formed on the substrate 12 by using a plating pretreatment material, and then subjected to a plating treatment after exposure and development treatment, whereby the exposed portion and the unexposed portion are respectively The mesh portion and the light transmissive portion are formed to form the mesh pattern 20 and the moiré suppressing portion 26. Further, by further performing physical development and/or plating treatment on the metal portion, the metal portion can carry the conductive metal.

作為使用鍍敷預處理材的方法的更佳的形態,可列舉如下的2個形態。另外,下述的更具體的內容揭示於日本專利特開2003-213437號公報、日本專利特開2006-64923號公報、日本專利特開2006-58797號公報、日本專利特開2006-135271號公報等中。 As a more preferable aspect of the method of using a plating pretreatment material, the following two forms are mentioned. In addition, the following more specific contents are disclosed in Japanese Laid-Open Patent Publication No. 2003-213437, Japanese Patent Laid-Open No. Hei. No. 2006-64923, Japanese Patent Laid-Open No. Hei. No. 2006-58797, and Japanese Patent Laid-Open No. Hei. No. 2006-135271. Wait.

(a)在基體12上塗佈包含與鍍敷觸媒或其前驅物相互作用的官能基的被鍍敷層,然後進行曝光、顯影後進行鍍敷處理,而在被鍍敷材料上形成金屬部的形態。 (a) coating a coated layer containing a functional group that interacts with a plating catalyst or a precursor thereof on the substrate 12, followed by exposure, development, and plating treatment to form a metal on the material to be plated. The form of the ministry.

(b)在基體12上依序積層包含聚合物及金屬氧化物的基底層、以及包含與鍍敷觸媒或其前驅物相互作用的官能基的被鍍敷層,然後進行曝光、顯影後進行鍍敷處理,而在被鍍敷材料上形成金屬部的形態。 (b) sequentially depositing a base layer containing a polymer and a metal oxide on the substrate 12, and a plated layer containing a functional group that interacts with the plating catalyst or its precursor, and then performing exposure and development. The plating treatment is performed to form a metal portion on the material to be plated.

或者,可在基體12上藉由噴墨形成篩孔圖案20與莫爾紋抑制部26。 Alternatively, the mesh pattern 20 and the moiré suppressing portion 26 may be formed on the substrate 12 by inkjet.

接著,在本實施方式的導電性膜10中,以作為特佳的形態的使用鹵化銀照相感光材料的方法為中心進行闡述。 Next, in the conductive film 10 of the present embodiment, a method of using a silver halide photographic light-sensitive material as a particularly preferable embodiment will be mainly described.

本實施方式的導電性膜10的製造方法根據感光材料與 顯影處理的形態,包括如下的3個形態。 The method for producing the conductive film 10 of the present embodiment is based on a photosensitive material and The form of the development treatment includes the following three forms.

(1)將不含物理顯影核的感光性鹵化銀黑白感光材料進行化學顯影或熱顯影,而在該感光材料上形成金屬銀部的形態。 (1) A photosensitive silver halide black-and-white photosensitive material containing no physical development nuclei is chemically developed or thermally developed to form a metallic silver portion on the photosensitive material.

(2)將鹵化銀乳劑層中含有物理顯影核的感光性鹵化銀黑白感光材料進行溶解物理顯影,而在該感光材料上形成金屬銀部的形態。 (2) A photosensitive silver halide black-and-white photosensitive material containing a physical development nucleus in a silver halide emulsion layer is subjected to dissolution physical development to form a metallic silver portion on the photosensitive material.

(3)將不含物理顯影核的感光性鹵化銀黑白感光材料、與含有物理顯影核的具有非感光性層的受像片重疊進行擴散轉印顯影,而在非感光性受像片上形成金屬銀部的形態。 (3) A photosensitive silver halide black-and-white photosensitive material containing no physical development core is superimposed on a photoreceptor having a non-photosensitive layer containing a physical development nucleus to perform diffusion transfer development, and a metallic silver portion is formed on the non-photosensitive image-receiving sheet. Shape.

上述(1)的形態是一體型黑白顯影型,在感光材料上形成透光性導電性膜等透光性導電性膜。所得的顯影銀為化學顯影銀或熱顯影銀,是高比表面積的長絲,這在後續的鍍敷或物理顯影過程中活性高。 The form of the above (1) is an integrated black-and-white development type, and a light-transmitting conductive film such as a light-transmitting conductive film is formed on the photosensitive material. The resulting developed silver is chemically developed silver or thermally developed silver, which is a filament having a high specific surface area, which is highly active during subsequent plating or physical development.

上述(2)的形態是在曝光部將物理顯影核近緣的鹵化銀粒子溶解而沈積於顯影核上,藉此在感光材料上形成透光性導電性膜等透光性導電性膜,其亦為一體型黑白顯影型。顯影作用由於是在物理顯影核上的析出,因此為高活性,但顯影銀是比表面積小的球形。 In the form of the above (2), the silver halide particles which are close to the physical development nucleus are dissolved in the exposed portion and deposited on the developing nucleus, whereby a light-transmitting conductive film such as a light-transmitting conductive film is formed on the photosensitive material. It is also an integrated black and white developing type. The developing action is high activity because it is precipitated on the physical developing core, but the developing silver is a spherical shape having a small specific surface area.

上述(3)的形態是在未曝光部將鹵化銀粒子溶解而擴散而沈積於受像片上的顯影核上,藉此在受像片上形成透光性導電性膜等透光性導電性膜,是所謂的分離型,且為將受像片自感光材料剝離而使用的形態。 In the form of the above (3), the silver halide particles are dissolved and diffused in the unexposed portion to be deposited on the developing core on the image receiving sheet, whereby a light-transmitting conductive film such as a light-transmitting conductive film is formed on the image receiving sheet. The separation type is a form used to peel off the photoreceptor from the photosensitive material.

任一種形態均可選擇負型顯影處理及反轉顯影處理的任一種顯影(為擴散轉印方式時,藉由使用自動正型感光材料作為感光材料而可進行負型顯影處理)。 In either case, either of the negative development processing and the reverse development processing can be selected (in the case of the diffusion transfer method, negative development processing can be performed by using an automatic positive photosensitive material as a photosensitive material).

此處所謂化學顯影、熱顯影、溶解物理顯影、擴散轉印顯影,是指業界通常所使用的用語,並在照相化學的一般教科書、例如菊地真一著「照相化學」(共立出版社、1955年發行)、C.E.K.米斯(C.E.K.Mees)編,《照相過程理論,第四版》(「The Theory of The Photographic Processes,4th ed.」)(麥克米倫公司、1977年發行)中有解說。本案是有關於液處理的發明,但亦可參考應用熱顯影方式作為其他顯影方式的技術。例如,可應用在日本專利特開2004-184693號、日本專利特開2004-334077號、日本專利特開2005-010752號的各公報、日本專利特願2004-244080號、日本專利特願2004-085655號的各說明書中所記載的技術。 Here, chemical development, thermal development, dissolved physical development, and diffusion transfer development refer to the terms commonly used in the industry, and in general textbooks of photographic chemistry, such as Kikuchi, "Photography Chemistry" (Kyoritsu Press, 1955) Released, CEK Mees, "The Theory of The Photographic Processes, 4th ed." (Macmillan, issued in 1977) has explanations. This case relates to the invention of liquid treatment, but it is also possible to refer to the technique of applying the thermal development method as another development method. For example, Japanese Laid-Open Patent Publication No. 2004-184693, Japanese Patent Laid-Open No. 2004-334077, Japanese Patent Laid-Open No. Hei No. 2005-010752, Japanese Patent Application No. 2004-244080, and Japanese Patent Application No. 2004- The technique described in each specification of No. 085655.

上述例中,如圖1所示般表示與配置有莫爾紋抑制部26的1條邊28交叉的其他邊、與該莫爾紋抑制部26的延伸方向(長軸)大致平行的例子,此外可較佳地採用如以下的形態。 In the above-described example, as shown in FIG. 1, the other side intersecting with one side 28 on which the moiré suppressing portion 26 is disposed is substantially parallel to the extending direction (long axis) of the moiré suppressing portion 26, and The following form can be preferably employed.

即,如圖8所示的第1變形例的導電膜10a般,相對於配置有莫爾紋抑制部26的1條邊28,而莫爾紋抑制部26的延伸方向(長軸)可傾斜(未正交)。另外,如圖9所示的第2變形例的導電膜10b及圖10所示的第3變形例的導電膜10c般,僅具有第1突出部26a的莫爾紋抑制部26、與僅具有第2突出部26b的莫爾紋抑制部26可隨機地配置。圖9表示相對於配置有莫爾紋抑 制部26的1條邊28,而莫爾紋抑制部26的延伸方向為(長軸)正交的例子,圖10表示相對於1條邊28,而莫爾紋抑制部26的延伸方向(長軸)為傾斜(未正交)的例子。 In other words, as in the conductive film 10a of the first modification shown in FIG. 8, the direction in which the moiré suppressing portion 26 extends (long axis) can be inclined with respect to one side 28 on which the moiré suppressing portion 26 is disposed ( Not orthogonal). In addition, as in the conductive film 10b of the second modification shown in FIG. 9 and the conductive film 10c of the third modification shown in FIG. 10, only the moiré suppressing portion 26 having the first protruding portion 26a has only The moiré suppressing portion 26 of the second protruding portion 26b can be randomly arranged. Figure 9 shows the moiré suppression relative to the configuration. One side 28 of the portion 26, and the extending direction of the moiré suppressing portion 26 is an example in which the (long axis) is orthogonal, and FIG. 10 shows the extending direction of the moiré suppressing portion 26 with respect to one side 28 (long axis) ) is an example of tilt (not orthogonal).

此處,以下對本實施方式的導電性膜10的各層的構成進行詳細地說明。 Here, the configuration of each layer of the conductive film 10 of the present embodiment will be described in detail below.

[基體12] [Base 12]

作為基體12,可列舉塑膠膜、塑膠板、玻璃板等。 Examples of the substrate 12 include a plastic film, a plastic plate, and a glass plate.

作為上述塑膠膜及塑膠板的原料,例如可使用:聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)、聚萘二甲酸乙二酯(polyethylene naphthalate,PEN)等聚酯類;聚乙烯(polyethylene,PE)、聚丙烯(polypropylene,PP)、聚苯乙烯、乙烯乙酸乙烯酯/環烯烴聚合物/環烯烴共聚物(ethylene vinyl acetate/cyclo olefin polymer/cyclic olefin copolymer,EVA/COP/COC)等聚烯烴類;乙烯系樹脂;此外可使用:聚碳酸酯(polycarbonate,PC)、聚醯胺、聚醯亞胺、丙烯酸系樹脂、三乙醯纖維素(triacetyl cellulose,TAC)等。 As the raw material of the plastic film and the plastic sheet, for example, polyester such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN); polyethylene ( Polyethylene (PE), polypropylene (PP), polystyrene, ethylene vinyl acetate/cyclo olefin polymer/cyclic olefin copolymer (EVA/COP/COC) Polyolefins, vinyl resins, and polycarbonate (polycarbonate, PC), polyamidiamine, acrylic resin, triacetyl cellulose (TAC), and the like.

作為基體12,較佳為PET(熔點:258℃)、PEN(熔點:269℃)、PE(熔點:135℃)、PP(熔點:163℃)、聚苯乙烯(熔點:230℃)、聚氯乙烯(熔點:180℃)、聚偏二氯乙烯(熔點:212℃)或TAC(熔點:290℃)等熔點為約290℃以下的塑膠膜、或塑膠板,特別是就透光性或加工性等的觀點而言,較佳為PET。由於用於觸控面板或電磁波屏蔽膜等的導電性膜10要求透明性, 因此較佳為基體12的透明度高。 As the substrate 12, preferably PET (melting point: 258 ° C), PEN (melting point: 269 ° C), PE (melting point: 135 ° C), PP (melting point: 163 ° C), polystyrene (melting point: 230 ° C), poly a plastic film or a plastic plate having a melting point of about 290 ° C or lower, such as vinyl chloride (melting point: 180 ° C), polyvinylidene chloride (melting point: 212 ° C) or TAC (melting point: 290 ° C), especially in terms of light transmittance or From the viewpoint of workability and the like, PET is preferred. Since the conductive film 10 for a touch panel or an electromagnetic wave shielding film or the like requires transparency, Therefore, it is preferred that the substrate 12 has a high transparency.

[銀鹽感光層40] [Silver Salt Photosensitive Layer 40]

成為導電性膜10的導電層(篩孔圖案20及莫爾紋抑制部26)的銀鹽感光層40(參照圖4A),除了銀鹽與黏合劑外,含有溶劑或染料等添加劑。 The silver salt photosensitive layer 40 (see FIG. 4A) which becomes the conductive layer (the mesh pattern 20 and the moiré suppressing portion 26) of the conductive film 10 contains an additive such as a solvent or a dye in addition to the silver salt and the binder.

作為本實施方式中所用的銀鹽,可列舉:鹵化銀等無機銀鹽及乙酸銀等有機銀鹽。本實施方式中,較佳為使用作為光感測器(light sensor)的特性優異的鹵化銀。 The silver salt used in the present embodiment may, for example, be an inorganic silver salt such as silver halide or an organic silver salt such as silver acetate. In the present embodiment, it is preferable to use silver halide which is excellent in characteristics as a light sensor.

銀鹽感光層40的塗佈銀量(銀鹽的塗佈量)換算為銀較佳為1g/m2~30g/m2,更佳為1g/m2~25g/m2,尤佳為5g/m2~20g/m2。藉由將該塗佈銀量設為上述範圍,而可在製成導電性膜10時獲得所期望的表面電阻。 The amount of silver applied (the amount of coating of the silver salt) of the silver salt photosensitive layer 40 is preferably 1 g/m 2 to 30 g/m 2 , more preferably 1 g/m 2 to 25 g/m 2 , and particularly preferably 5g/m 2 ~ 20g/m 2 . By setting the amount of coated silver to the above range, a desired surface resistance can be obtained when the conductive film 10 is formed.

作為本實施方式中所用的黏合劑,例如可列舉:明膠、聚乙烯醇(polyvinyl alcohol,PVA)、聚乙烯吡咯烷酮(polyvinylpyrrolidone,PVP)、澱粉等多糖類、纖維素及其衍生物、聚環氧乙烷、聚乙烯胺、殼聚糖、聚離胺酸(polylysine)、聚丙烯酸、聚海藻酸、聚透明質酸、羧基纖維素等。這些根據官能基的離子性而具有中性、陰離子性、陽離子性的性質。 Examples of the binder used in the present embodiment include gelatin, polyvinyl alcohol (PVA), polyvinylpyrrolidone (PVP), polysaccharides such as starch, cellulose and derivatives thereof, and polyepoxy. Ethane, polyvinylamine, chitosan, polylysine, polyacrylic acid, polyalginic acid, polyhyaluronic acid, carboxy cellulose, and the like. These have the properties of neutral, anionic, and cationic depending on the ionicity of the functional group.

本實施方式的銀鹽感光層40中所含有的黏合劑的含量並無特別限定,可在能發揮分散性與密接性的範圍內適當確定。銀鹽感光層40中的黏合劑的含量以銀/黏合劑體積比計較佳為1/4以上,更佳為1/2以上。銀/黏合劑體積比較佳為100/1以下,更 佳為50/1以下。另外,銀/黏合劑體積比尤佳為1/1~4/1。銀/黏合劑體積比最佳為1/1~3/1。藉由將銀鹽感光層40中的銀/黏合劑體積比設為該範圍,而即便在調整了塗佈銀量的情況下,亦可獲得抑制電阻值的不均,而具有均勻的表面電阻的導電性膜10。另外,銀/黏合劑體積比可藉由以下方式求出:將原料的鹵化銀量/黏合劑量(重量比)變換為銀量/黏合劑量(重量比),接著將銀量/黏合劑量(重量比)變換為銀量/黏合劑量(體積比)。 The content of the binder contained in the silver salt photosensitive layer 40 of the present embodiment is not particularly limited, and can be appropriately determined within a range in which dispersibility and adhesion can be exhibited. The content of the binder in the silver salt photosensitive layer 40 is preferably 1/4 or more, more preferably 1/2 or more, in terms of a silver/binder volume ratio. Silver / binder volume is better than 100/1, more Good for 50/1 or less. In addition, the silver/binder volume ratio is preferably from 1/1 to 4/1. The silver/binder volume ratio is preferably from 1/1 to 3/1. By setting the silver/binder volume ratio in the silver salt photosensitive layer 40 to this range, even when the amount of coated silver is adjusted, unevenness in suppressing the resistance value can be obtained, and uniform surface resistance can be obtained. Conductive film 10. In addition, the silver/binder volume ratio can be obtained by converting the amount of silver halide/binder (weight ratio) of the raw material into a silver amount/binder amount (weight ratio), followed by a silver amount/binder amount (weight). The ratio is converted to the amount of silver/binder (volume ratio).

<溶劑> <solvent>

銀鹽感光層40的形成中所用的溶劑並無特別限定,例如可列舉:水、有機溶劑(例如甲醇等醇類、丙酮等酮類、甲醯胺等醯胺類、二甲基亞碸等亞碸類、乙酸乙酯等酯類、醚類等)、離子性液體、及這些的混合溶劑。 The solvent to be used for the formation of the silver salt photosensitive layer 40 is not particularly limited, and examples thereof include water and an organic solvent (for example, an alcohol such as methanol, a ketone such as acetone, a guanamine such as formamide, or a dimethyl hydrazine. An anthraquinone, an ester such as ethyl acetate, an ether or the like, an ionic liquid, and a mixed solvent of these.

相對於銀鹽感光層40所含的銀鹽、黏合劑等的合計質量,本實施方式的銀鹽感光層40中所用的溶劑的含量為30質量%~90質量%的範圍,較佳為50質量%~80質量%的範圍。 The content of the solvent used in the silver salt photosensitive layer 40 of the present embodiment is in the range of 30% by mass to 90% by mass, preferably 50%, based on the total mass of the silver salt, the binder, and the like contained in the silver salt photosensitive layer 40. The range of mass % to 80% by mass.

<其他添加劑> <Other additives>

關於本實施方式中所用的各種添加劑,並無特別限制,可較佳地使用公知者。 The various additives used in the present embodiment are not particularly limited, and those known to use are preferably used.

[其他的層構成] [other layer composition]

在銀鹽感光層40上可設置未圖示的保護層。本實施方式中所謂「保護層」,是指包含明膠或高分子聚合物等黏合劑的層,為了表現防止擦傷或改良力學特性的效果,而形成於具有感 光性的銀鹽感光層40上。其厚度較佳為0.5μm以下。保護層的塗佈方法及形成方法並無特別限定,可適當選擇公知的塗佈方法及形成方法。另外,在較銀鹽感光層40更下處亦可設置例如底塗層。 A protective layer (not shown) may be provided on the silver salt photosensitive layer 40. In the present embodiment, the term "protective layer" means a layer containing a binder such as gelatin or a polymer, and is formed to have a feeling in order to exhibit an effect of preventing scratches or improving mechanical properties. The photosensitive silver salt is on the photosensitive layer 40. The thickness thereof is preferably 0.5 μm or less. The coating method and the formation method of the protective layer are not particularly limited, and a known coating method and formation method can be appropriately selected. Further, for example, an undercoat layer may be provided below the silver salt photosensitive layer 40.

接著,對導電性膜10的製作方法的各步驟進行說明。 Next, each step of the method of producing the conductive film 10 will be described.

[曝光] [exposure]

本實施方式中,包括藉由印刷方式實施導電部14的情形,但除了印刷方式以外,亦可藉由曝光與顯影等形成導電部14。即,對具有設置於基體12上的銀鹽感光層40的感光材料、或塗敷了光刻法(photolithography)用光聚合物的感光材料進行曝光。曝光可使用電磁波進行。作為電磁波,例如可列舉:可見光線、紫外線等光,X射線等放射線等。而且,曝光可利用具有波長分布的光源,亦可使用特定波長的光源。 In the present embodiment, the case where the conductive portion 14 is implemented by printing is included, but the conductive portion 14 may be formed by exposure, development, or the like in addition to the printing method. That is, the photosensitive material having the silver salt photosensitive layer 40 provided on the substrate 12 or the photosensitive material coated with the photopolymer for photolithography is exposed. Exposure can be performed using electromagnetic waves. Examples of the electromagnetic wave include light such as visible light and ultraviolet light, and radiation such as X-ray. Moreover, the exposure may utilize a light source having a wavelength distribution, or a light source of a specific wavelength may be used.

[顯影處理] [development processing]

本實施方式中,將銀鹽感光層40曝光後,接著進行顯影處理。顯影處理可使用:在銀鹽照相膜(photofilm)或印相紙(photographic paper)、印刷製版用膜、光罩用乳液遮罩(emulsion mask)等中所用的通常的顯影處理的技術。顯影液並無特別限定,亦可使用菲尼酮-對苯二酚(phenidone quinol,PQ)顯影液、米吐爾-對苯二酚(metol quinol,MQ)顯影液、米吐爾-抗壞血酸(metol ascorbic acid,MAA)顯影液等,市售品中例如可使用:富士軟片(Fuji Film)公司配方的CN-16、CR-56、CP45X、FD-3、PAPITOL,柯達(KODAK)公司配方的C-41、E-6、RA-4、D-19、D-72等的 顯影液,或其套組(kit)所含的顯影液。另外,亦可使用里斯(Lith)顯影液。 In the present embodiment, after the silver salt photosensitive layer 40 is exposed, development processing is subsequently performed. For the development treatment, a technique of usual development treatment used in a silver salt photo film or a photographic paper, a film for printing plate, an emulsion mask for a photomask, or the like can be used. The developer is not particularly limited, and a phenidone quinol (PQ) developer, a metol quinol (MQ) developer, and metor-ascorbic acid may also be used. Metol ascorbic acid, MAA) developer, etc., commercially available, for example, Fujifilm (Fuji Film) formula CN-16, CR-56, CP45X, FD-3, PAPITOL, Kodak (KODAK) formula C-41, E-6, RA-4, D-19, D-72, etc. Developer solution, or a developer contained in a kit. Alternatively, a Lith developer solution can be used.

本發明中的顯影處理可包括:為了將未曝光部分的銀鹽除去使其穩定化而進行的定影處理。本發明中的定影處理可使用:在銀鹽照相膜或印相紙、印刷製版用膜、光罩用乳液遮罩等中所用的定影處理的技術。 The development treatment in the present invention may include a fixing treatment performed in order to remove the silver salt of the unexposed portion to stabilize it. The fixing treatment in the present invention can be carried out using a fixing treatment technique used in a silver salt photographic film or a printing paper, a film for printing plate making, an emulsion mask for a photomask, and the like.

上述定影步驟中的定影溫度較佳為約20℃~約50℃,更佳為25℃~45℃。另外,定影時間較佳為5秒鐘~1分鐘,更佳為7秒鐘~50秒鐘。相對於感光材料的處理量,定影液的補充量較佳為600ml/m2以下,更佳為500ml/m2以下,特佳為300ml/m2以下。 The fixing temperature in the above fixing step is preferably from about 20 ° C to about 50 ° C, more preferably from 25 ° C to 45 ° C. Further, the fixing time is preferably from 5 seconds to 1 minute, more preferably from 7 seconds to 50 seconds. The amount of the fixing solution to be replenished is preferably 600 ml/m 2 or less, more preferably 500 ml/m 2 or less, and particularly preferably 300 ml/m 2 or less, relative to the amount of the photosensitive material.

實施了顯影、定影處理的感光材料較佳為實施水洗處理或穩定化處理。在上述水洗處理或穩定化處理中,通常每1m2的感光材料,使用20升以下的水洗水量而進行,亦可使用3升以下的補充量(亦包括0、即積存水水洗)進行。 The photosensitive material subjected to the development and fixing treatment is preferably subjected to a water washing treatment or a stabilization treatment. In the water washing treatment or the stabilization treatment, it is usually carried out using a water washing amount of 20 liters or less per 1 m 2 of the photosensitive material, or may be carried out using a supplementary amount of 3 liters or less (including 0, that is, washing with water).

相對於曝光前的曝光部所含的銀的質量,顯影處理後的曝光部所含的金屬銀的質量較佳為50質量%以上的含有率,更佳為80質量%以上。若曝光部所含的銀的質量相對於曝光前的曝光部所含的銀的質量為50質量%以上,則可獲得高的導電性,因此較佳。 The mass of the metallic silver contained in the exposed portion after the development treatment is preferably 50% by mass or more, and more preferably 80% by mass or more, based on the mass of the silver contained in the exposed portion before the exposure. When the mass of the silver contained in the exposed portion is 50% by mass or more based on the mass of the silver contained in the exposed portion before the exposure, high conductivity can be obtained, which is preferable.

本實施方式中的顯影處理後的灰階並無特別限定,但較佳為超過4.0。若顯影處理後的灰階超過4.0,則可在保持高的透 光性部的透光性的狀態下,提高導電性金屬部(金屬細線16)的導電性。作為使灰階為4.0以上的手段,例如可列舉:上述銠離子、銥離子的摻雜劑。 The gray scale after the development treatment in the present embodiment is not particularly limited, but is preferably more than 4.0. If the gray scale after development treatment exceeds 4.0, it can be kept high. In the light transmissive state of the optical portion, the conductivity of the conductive metal portion (metal thin wire 16) is improved. Examples of the means for setting the gradation to 4.0 or more include the above-mentioned dopants of cerium ions and cerium ions.

經過以上步驟可獲得導電性膜10,但所得的導電性膜10的表面電阻較佳為0.1Ω/sq.~100Ω/sq.的範圍。下限值較佳為1Ω/sq.以上、3Ω/sq.以上、5Ω/sq.以上、10Ω/sq.以上。上限值較佳為70Ω/sq.以下、50Ω/sq.以下。藉由在此種範圍內調整表面電阻,而即便是面積為10cm×10cm以上的大型觸控面板,亦可進行位置檢測。另外,對顯影處理後的導電片,可進一步進行壓光處理,並且可藉由壓光處理調整為所期望的表面電阻。 The conductive film 10 can be obtained through the above steps, but the surface resistance of the obtained conductive film 10 is preferably in the range of 0.1 Ω/sq. to 100 Ω/sq. The lower limit is preferably 1 Ω/sq. or more, 3 Ω/sq. or more, 5 Ω/sq. or more, and 10 Ω/sq. or more. The upper limit is preferably 70 Ω/sq. or less and 50 Ω/sq. or less. By adjusting the surface resistance within such a range, position detection can be performed even for a large touch panel having an area of 10 cm × 10 cm or more. Further, the conductive sheet after the development treatment can be further subjected to calendering treatment, and can be adjusted to a desired surface resistance by calendering treatment.

[物理顯影及鍍敷處理] [Physical development and plating treatment]

本實施方式中,為了提高藉由上述曝光及顯影處理而形成的金屬銀部44的導電性,可對金屬銀部44進行用以承載導電性金屬粒子的物理顯影及/或鍍敷處理。本發明中,可僅藉由物理顯影或鍍敷處理的任一種使導電性金屬粒子承載於金屬銀部44,亦可將物理顯影與鍍敷處理加以組合而使導電性金屬粒子承載於金屬銀部44。另外,包括對金屬銀部44實施物理顯影及/或鍍敷處理者而稱為「導電性金屬部」。 In the present embodiment, in order to improve the conductivity of the metallic silver portion 44 formed by the above-described exposure and development processing, the metallic silver portion 44 may be subjected to physical development and/or plating treatment for carrying the conductive metal particles. In the present invention, the conductive metal particles may be supported on the metallic silver portion 44 by any of physical development or plating treatment, or the physical development and plating treatment may be combined to carry the conductive metal particles on the metallic silver. Part 44. Further, a person who performs physical development and/or plating treatment on the metal silver portion 44 is referred to as a "conductive metal portion".

本實施方式中所謂「物理顯影」,是指在金屬或金屬化合物的核上,藉由還原劑將銀離子等金屬離子還原而使金屬粒子析出。該物理顯影可用於一次成像(instant)B膜及一次成像W膜、一次成像幻燈片膜(slide film)、或印刷版製造等,在本發明 中可使用該技術。 In the present embodiment, the term "physical development" means that metal particles such as silver ions are reduced by a reducing agent on a core of a metal or a metal compound to precipitate metal particles. The physical development can be used for an instant B film and a single imaging W film, a single imaging slide film, or a printing plate manufacturing, etc., in the present invention. This technique can be used in it.

另外,物理顯影可與曝光後的顯影處理同時進行,亦可在顯影處理後另外進行。 Further, the physical development may be performed simultaneously with the development processing after the exposure, or may be additionally performed after the development processing.

本實施方式中,鍍敷處理可使用無電鍍敷(化學還原鍍敷或置換鍍敷)、電解鍍敷、或無電鍍敷與電解鍍敷這兩者。本實施方式中的無電鍍敷可使用公知的無電鍍敷技術,例如可使用在印刷配線板等中所用的無電鍍敷技術,無電鍍敷較佳為無電鍍銅。 In the present embodiment, the plating treatment may be performed by electroless plating (chemical reduction plating or displacement plating), electrolytic plating, or both electroless plating and electrolytic plating. A known electroless plating technique can be used for the electroless plating in the present embodiment. For example, an electroless plating technique used in a printed wiring board or the like can be used, and electroless plating is preferably electroless copper plating.

[氧化處理] [Oxidation treatment]

本實施方式中,較佳為對顯影處理後的金屬銀部44、以及藉由物理顯影及/或鍍敷處理而形成的導電性金屬部實施氧化處理。藉由進行氧化處理,而例如金屬少量沈積(deposition)於透光性部46時,可將該金屬除去,使透光性部46的透過性大致為100%。 In the present embodiment, it is preferable that the metal silver portion 44 after the development treatment and the conductive metal portion formed by the physical development and/or the plating treatment are subjected to an oxidation treatment. By performing an oxidation treatment, for example, when a small amount of metal is deposited on the light-transmitting portion 46, the metal can be removed, and the transmittance of the light-transmitting portion 46 is substantially 100%.

[導電性金屬部] [Electrically conductive metal part]

本實施方式的導電性金屬部(金屬細線16)的線寬如上所述般,可選自30μm以下。在使用導電性膜10作為電磁波屏蔽膜時,金屬細線16的線寬較佳為1μm以上、20μm以下,更佳為1μm以上、9μm以下,尤佳為2μm以上、7μm以下,特佳為2μm以上、5μm以下。在使用導電性膜10作為觸控面板的導電片時,線寬的下限較佳為0.1μm以上、1μm以上、3μm以上、4μm以上、5μm以上,線寬的上限較佳為15μm以下、10μm以下、9μm以下、8μm以下、7μm以下。在線寬小於上述下限值時, 導電性會變得不充分,因此在用於觸控面板時,檢測感光度會變得不充分。另一方面,若線寬超過上述上限值,則因導電性金屬部引起的莫爾紋變得顯著,或用於觸控面板時視認性變差。另外,藉由為上述範圍,而可改善導電性金屬部的莫爾紋,並且視認性變得特佳。 The line width of the conductive metal portion (metal thin wire 16) of the present embodiment may be selected from 30 μm or less as described above. When the conductive film 10 is used as the electromagnetic wave shielding film, the line width of the fine metal wires 16 is preferably 1 μm or more and 20 μm or less, more preferably 1 μm or more and 9 μm or less, and particularly preferably 2 μm or more and 7 μm or less, and particularly preferably 2 μm or more. , 5 μm or less. When the conductive film 10 is used as the conductive sheet of the touch panel, the lower limit of the line width is preferably 0.1 μm or more, 1 μm or more, 3 μm or more, 4 μm or more, or 5 μm or more, and the upper limit of the line width is preferably 15 μm or less and 10 μm or less. 9 μm or less, 8 μm or less, and 7 μm or less. When the line width is less than the above lower limit, The conductivity may become insufficient, so when used for a touch panel, the detection sensitivity may become insufficient. On the other hand, when the line width exceeds the above upper limit value, the moiré caused by the conductive metal portion becomes conspicuous, or the visibility is deteriorated when used for a touch panel. Further, by having the above range, the moiré of the conductive metal portion can be improved, and the visibility is particularly excellent.

格子的一邊的長度較佳為50μm以上、900μm以下,更佳為50μm以上、600μm以下,尤佳為50μm以上、500μm以下。另外,為了接地連接等,導電性金屬部的線寬可具有比200μm寬的部分。 The length of one side of the lattice is preferably 50 μm or more and 900 μm or less, more preferably 50 μm or more and 600 μm or less, and particularly preferably 50 μm or more and 500 μm or less. Further, for the ground connection or the like, the line width of the conductive metal portion may have a portion wider than 200 μm.

就可見光透射率的方面而言,本實施方式中的導電性金屬部的開口率較佳為90%以上。所謂開口率,是除去金屬細線16及莫爾紋抑制部26的透光性部46在整體中所佔的比例。 The aperture ratio of the conductive metal portion in the present embodiment is preferably 90% or more in terms of visible light transmittance. The aperture ratio is a ratio of the light-transmissive portion 46 from which the metal thin wires 16 and the moiré suppression portion 26 are removed as a whole.

[透光性部] [Translucent part]

本實施方式中所謂的「透光性部」,是指導電性膜10中導電性金屬部以外的具有透光性的部分。透光性部46的透射率如上所述般,除了有助於基體12的光吸收及反射外的380nm~780nm波長區域中的透射率在以最小值表示時,為90%以上、較佳為95%以上、更佳為97%以上、尤佳為98%以上、最佳為99%以上。 The "translucent portion" in the present embodiment is a portion that guides the light-transmitting property other than the conductive metal portion in the electric film 10. As described above, the transmittance of the light transmissive portion 46 is 90% or more, preferably 90% or more, in addition to the transmittance in the wavelength region of 380 nm to 780 nm which contributes to light absorption and reflection of the substrate 12. 95% or more, more preferably 97% or more, particularly preferably 98% or more, and most preferably 99% or more.

關於曝光方法,較佳為介隔玻璃遮罩的方法或藉由雷射描畫的圖案曝光方式。 As for the exposure method, a method of interposing a glass mask or a pattern exposure by laser drawing is preferred.

[導電性膜10] [Electrically conductive film 10]

本實施方式的導電性膜10中的基體12的厚度,較佳為 75μm~350μm。若厚度為75μm~350μm的範圍,則可獲得所期望的可見光的透射率,且操作亦容易。另外,在將2片導電性膜積層而製成觸控面板用導電片時,亦可降低導電性膜10間的寄生電容。 The thickness of the substrate 12 in the conductive film 10 of the present embodiment is preferably 75μm~350μm. When the thickness is in the range of 75 μm to 350 μm, the desired transmittance of visible light can be obtained, and the operation is also easy. In addition, when two conductive films are laminated to form a conductive sheet for a touch panel, the parasitic capacitance between the conductive films 10 can be reduced.

設置於基體12上的金屬銀部44的厚度,可根據塗佈於基體12上的銀鹽感光層用塗料的塗佈厚度進行適當決定。金屬銀部44的厚度可選自0.001mm~0.2mm,但較佳為30μm以下,更佳為20μm以下,尤佳為0.01μm~9μm,最佳為0.05μm~5μm。另外,金屬銀部44較佳為圖案狀。金屬銀部44可為1層,亦可為2層以上的多層構成。在金屬銀部44為圖案狀、且為2層以上的多層構成時,為了可對不同的波長感光,而可賦予不同的感色性(color sensitivity)。藉此,若改變曝光波長進行曝光,則可在各層中形成不同的圖案。 The thickness of the metallic silver portion 44 provided on the substrate 12 can be appropriately determined depending on the coating thickness of the coating material for the silver salt photosensitive layer applied to the substrate 12. The thickness of the metal silver portion 44 may be selected from 0.001 mm to 0.2 mm, preferably 30 μm or less, more preferably 20 μm or less, still more preferably 0.01 μm to 9 μm, and most preferably 0.05 μm to 5 μm. Further, the metal silver portion 44 is preferably in the form of a pattern. The metal silver portion 44 may be one layer or a multilayer structure of two or more layers. When the metal silver portion 44 has a pattern shape and has a multilayer structure of two or more layers, different color sensitivities can be imparted in order to be sensitive to different wavelengths. Thereby, if the exposure wavelength is changed and exposure is performed, a different pattern can be formed in each layer.

作為觸控面板的用途,導電性金屬部的厚度越薄,則顯示面板的視角越寬,因此較佳,就視認性的提高的方面而言,亦要求薄膜化。就此種觀點而言,包含導電性金屬部所承載的導電性金屬的層的厚度,較佳為小於9μm,更佳為0.1μm以上且小於5μm,尤佳為0.1μm以上且小於3μm。 As a use of the touch panel, the thinner the thickness of the conductive metal portion is, the wider the viewing angle of the display panel is. Therefore, it is preferable to increase the visibility, and also to improve the visibility. From such a viewpoint, the thickness of the layer containing the conductive metal carried by the conductive metal portion is preferably less than 9 μm, more preferably 0.1 μm or more and less than 5 μm, and particularly preferably 0.1 μm or more and less than 3 μm.

本實施方式中,藉由控制上述銀鹽感光層40的塗佈厚度,而形成所期望的厚度的金屬銀部44,而且可藉由物理顯影及/或鍍敷處理而自由地控制包含導電性金屬粒子的層的厚度,因此即便是具有小於5μm、較佳為小於3μm的厚度的導電性膜10, 亦可容易地形成。 In the present embodiment, the metal silver portion 44 having a desired thickness is formed by controlling the coating thickness of the silver salt photosensitive layer 40, and the conductivity can be freely controlled by physical development and/or plating treatment. The thickness of the layer of the metal particles, and therefore even the conductive film 10 having a thickness of less than 5 μm, preferably less than 3 μm, It can also be easily formed.

另外,本實施方式的導電性膜10的製造方法中,鍍敷等的步驟未必必須進行。原因是:本實施方式的導電性膜10的製造方法中,藉由調整銀鹽感光層40的塗佈銀量、銀/黏合劑體積比,而可獲得所期望的表面電阻。另外,根據需要可進行壓光處理等。 Further, in the method for producing the conductive film 10 of the present embodiment, the steps of plating or the like are not necessarily required. The reason is that in the method for producing the conductive film 10 of the present embodiment, the desired surface resistance can be obtained by adjusting the amount of coated silver and the silver/binder volume ratio of the silver salt photosensitive layer 40. Further, calendering treatment or the like can be performed as needed.

較佳為在對銀鹽感光層40進行顯影處理後,浸漬於硬膜劑中而進行硬膜處理。作為硬膜劑,例如可列舉:戊二醛、己二醛、2,3-二羥基-1,4-二噁烷等二醛類及硼酸等日本專利特開平2-141279號公報中所記載者。 Preferably, after the silver salt photosensitive layer 40 is subjected to development treatment, it is immersed in a hard coating agent to perform a hard film treatment. Examples of the hard coat agent include dialdehydes such as glutaraldehyde, adipaldehyde, and 2,3-dihydroxy-1,4-dioxane, and those described in Japanese Patent Laid-Open No. Hei 2-141279. By.

對導電性膜10可附加抗反射層或硬塗層等功能層。 A functional layer such as an antireflection layer or a hard coat layer may be added to the conductive film 10.

另外,本發明可與下述表1及表2所記載的公開公報及國際公開說明書的技術適當組合而使用。並且省略「日本專利特開」、「號公報」、「號說明書」等的表記。 Further, the present invention can be used in appropriate combination with the techniques disclosed in Tables 1 and 2 below and the techniques of the International Publications. Further, the expressions such as "Japanese Patent Special Open", "No. Bulletin", and "No. Manual" are omitted.

[表1] [Table 1]

<實施例> <Example>

以下,列舉本發明的實施例對本發明進行更具體地說明。另外,以下的實施例所示的材料、使用量、比例、處理內容、處理順序等,只要不脫離本發明的主旨,則可適當變更。因此,本發明的範圍不應由以下所示的具體例來限定性解釋。 Hereinafter, the present invention will be more specifically described by way of examples of the invention. In addition, the materials, the amounts, the ratios, the processing contents, the processing order, and the like shown in the following examples can be appropriately changed without departing from the gist of the invention. Therefore, the scope of the invention should not be construed as being limited by the specific examples shown below.

[第1實施例] [First Embodiment]

第1實施例中,對於實施例1~實施例11,使金屬細線的線寬及格子的一邊的長度不同,並評價導電性膜的視認性、開口率及莫爾紋。將實施例1~實施例11的詳細內容及評價結果表 述於後述的表3。 In the first embodiment, in the first to the eleventh examples, the line width of the fine metal wires and the length of one side of the lattice were different, and the visibility, the aperture ratio, and the moiré of the conductive film were evaluated. Details of the examples 1 to 11 and evaluation results This is described in Table 3 below.

(實施例1) (Example 1)

(鹵化銀感光材料) (silver halide photosensitive material)

製備相對於水介質中的150g的Ag而包含10.0g明膠、且含有等效球直徑(sphere-equivalent diameter)平均為0.1μm的碘溴氯化銀粒子(I=0.2莫耳%、Br=40莫耳%)的乳劑。 Iodine iodobromochloride particles containing 10.0 g of gelatin and having an average spherical-equivalent diameter of 0.1 μm with respect to 150 g of Ag in an aqueous medium were prepared (I=0.2 mol%, Br=40) Mol%) emulsion.

另外,在該乳劑中,以濃度為10-7(莫耳/莫耳銀)的方式添加K3Rh2Br9及K2IrCl6,並在溴化銀粒子中摻雜Rh離子與Ir離子。在該乳劑中添加Na2PdCl4,接著使用氯金酸(chlorauric acid)與硫代硫酸鈉進行金硫增感後,與明膠硬膜劑一起以銀的塗佈量為10g/m2的方式塗佈於透明基體(此處,均為聚對苯二甲酸乙二酯(PET))上。此時,Ag/明膠體積比設為2/1。 Further, in the emulsion, K 3 Rh 2 Br 9 and K 2 IrCl 6 are added at a concentration of 10 -7 (mol/mole silver), and Rh ions and Ir ions are doped in the silver bromide particles. . Na 2 PdCl 4 was added to the emulsion, followed by gold sulphur sensitization using chloroauric acid and sodium thiosulfate, and the coating amount of silver was 10 g/m 2 together with the gelatin hardener. It is applied to a transparent substrate (here, both of polyethylene terephthalate (PET)). At this time, the Ag/gelatin volume ratio was set to 2/1.

在寬度為30cm的PET支撐體上以25cm的寬度塗佈20m分,以塗佈的中央部殘留24cm的方式將兩端各切落3cm,而獲得卷狀鹵化銀感光材料。 20 m of a PET support having a width of 30 cm was coated with a width of 25 cm, and both ends were cut by 3 cm so that the center portion of the coating was 24 cm, thereby obtaining a rolled silver halide photosensitive material.

(曝光) (exposure)

曝光的圖案如圖1所示般,藉由在構成篩孔圖案20的格子24的各邊28分別隨機地配置莫爾紋抑制部26的圖案,對A4尺寸(210mm×297mm)的基體12進行曝光。曝光是介隔上述圖案的光罩使用以高壓水銀燈為光源的平行光進行曝光。 As shown in FIG. 1, the pattern of the moiré suppressing portion 26 is randomly arranged on each side 28 of the lattice 24 constituting the mesh pattern 20, and the substrate 12 of A4 size (210 mm × 297 mm) is subjected to the pattern. exposure. Exposure is a mask that is interspersed with the above pattern and is exposed using parallel light using a high pressure mercury lamp as a light source.

(顯影處理) (development processing)

.顯影液1L配方 . Developer 1L formula

.定影液1L配方 . Fixer 1L formula

使用上述處理劑,將經曝光的感材使用富士軟片公司製造的自動顯影機FG-710PTS,在處理條件:顯影35℃ 30秒、定影34℃ 23秒、水洗流水(5L/分鐘)20秒下進行處理。 Using the above-mentioned treating agent, the exposed sensing material was subjected to an automatic developing machine FG-710PTS manufactured by Fujifilm Co., Ltd. under the processing conditions: development at 35 ° C for 30 seconds, fixing at 34 ° C for 23 seconds, and washing with running water (5 L / minute) for 20 seconds. Process it.

以如上所述方式進行曝光、顯影處理,而製作金屬細線16的線寬Wa為10μm、格子24(該例中為正方形狀)的一邊的長度La為500μm、莫爾紋抑制部26的線寬Wb為10μm、莫爾紋抑制部26的長度Lb為125.0μm的實施例1的導電性膜。 By performing exposure and development processing as described above, the line width Wa of the metal thin wires 16 is 10 μm, and the length La of one side of the lattice 24 (in this example, a square shape) is 500 μm, and the line width of the moiré suppressing portion 26 is obtained. The conductive film of Example 1 having a Wb of 10 μm and a length Lb of the Moiré suppressing portion 26 of 125.0 μm.

(實施例2) (Example 2)

實施例2中,將格子24的一邊的長度La設為400μm、將莫爾紋抑制部26的長度Lb設為100.0μm,除此以外,以與上述實施例1相同的方式,製作實施例2的導電性膜。 In the second embodiment, the second embodiment was produced in the same manner as in the above-described first embodiment, except that the length La of one side of the lattice 24 was 400 μm and the length Lb of the moiré suppressing portion 26 was 100.0 μm. Conductive film.

(實施例3) (Example 3)

實施例3中,將金屬細線16的線寬Wa設為9μm、將格子24的一邊的長度La設為400μm、將莫爾紋抑制部26的線寬Wb設為9μm、將莫爾紋抑制部26的長度Lb設為100.0μm,除此以外,以與上述實施例1相同的方式,製作實施例3的導電性膜。 In the third embodiment, the line width Wa of the metal thin wires 16 is set to 9 μm, the length La of one side of the lattice 24 is set to 400 μm, and the line width Wb of the moiré suppressing portion 26 is set to 9 μm, and the moiré suppressing portion is provided. A conductive film of Example 3 was produced in the same manner as in Example 1 except that the length Lb of 26 was set to 100.0 μm.

(實施例4~實施例6) (Example 4 to Example 6)

實施例4、實施例5及實施例6中,將金屬細線16的線寬Wa分別設為8μm、7μm及6μm、將格子24的一邊的長度La分別設為300μm、將莫爾紋抑制部26的線寬Wb分別設為8μm、7μm及6μm、將莫爾紋抑制部26的長度Lb分別設為75.0μm,除此以外,以與上述實施例1相同的方式,製作實施例4、實施例5及實施例6的導電性膜。 In the fourth embodiment, the fifth embodiment and the sixth embodiment, the line widths Wa of the metal thin wires 16 are set to 8 μm, 7 μm, and 6 μm, respectively, and the length La of one side of the lattice 24 is set to 300 μm, respectively, and the moiré suppression unit 26 is provided. In the same manner as in the above-described first embodiment, the fourth embodiment and the examples were produced except that the line widths Wb were set to 8 μm, 7 μm, and 6 μm, respectively, and the length Lb of the moiré suppression unit 26 was set to 75.0 μm. 5 and the conductive film of Example 6.

(實施例7~實施例9) (Examples 7 to 9)

實施例7、實施例8及實施例9中,將金屬細線16的線寬Wa分別設為5μm、4μm及3μm、將格子24的一邊的長度La分別設為200μm、將莫爾紋抑制部26的線寬Wb分別設為5μm、4μm及3μm、將莫爾紋抑制部26的長度Lb分別設為50.0μm, 除此以外,以與上述實施例1相同的方式,製作實施例7、實施例8及實施例9的導電性膜。 In the seventh embodiment, the eighth embodiment and the ninth embodiment, the line widths Wa of the metal thin wires 16 are set to 5 μm, 4 μm, and 3 μm, respectively, and the length La of one side of the lattice 24 is set to 200 μm, and the moiré suppression unit 26 is provided. The line widths Wb are set to 5 μm, 4 μm, and 3 μm, respectively, and the length Lb of the moiré suppression unit 26 is set to 50.0 μm, respectively. A conductive film of Example 7, Example 8, and Example 9 was produced in the same manner as in Example 1 except the above.

(實施例10) (Embodiment 10)

實施例10中,將金屬細線16的線寬Wa設為2μm、將格子24的一邊的長度La設為100μm、將莫爾紋抑制部26的線寬Wb設為2μm、將莫爾紋抑制部26的長度Lb設為25.0μm,除此以外,以與上述實施例1相同的方式,製作實施例10的導電性膜。 In the tenth embodiment, the line width Wa of the metal thin wire 16 is set to 2 μm, the length La of one side of the lattice 24 is set to 100 μm, and the line width Wb of the moiré suppressing portion 26 is set to 2 μm, and the moiré suppressing portion is provided. A conductive film of Example 10 was produced in the same manner as in Example 1 except that the length Lb of 26 was 25.0 μm.

(實施例11) (Example 11)

實施例11中,將金屬細線16的線寬Wa設為1μm、將格子24的一邊的長度La設為50μm、將莫爾紋抑制部26的線寬Wb設為1μm、將莫爾紋抑制部26的長度Lb設為12.5μm,除此以外,以與上述實施例1相同的方式,製作實施例11的導電性膜。 In the eleventh embodiment, the line width Wa of the metal thin wires 16 is 1 μm, the length La of one side of the lattice 24 is 50 μm, and the line width Wb of the moiré suppressing portion 26 is 1 μm, and the moiré suppressing portion is provided. A conductive film of Example 11 was produced in the same manner as in Example 1 except that the length Lb of 26 was set to 12.5 μm.

(視認性的評價) (evaluation of visibility)

<金屬細線的視認難易性> <Visual difficulty of metal thin wires>

對於實施例1~實施例11,分別將導電性膜貼附於顯示裝置的顯示面板而構成觸控面板。將觸控面板設置於旋轉盤上,驅動顯示裝置而顯示白色時,用肉眼確認是否有粗線或黑斑點、且觸控面板的導電圖案(篩孔圖案或莫爾紋抑制部)是否顯眼。 In the first to eleventh embodiments, the conductive film was attached to the display panel of the display device to form a touch panel. When the touch panel is placed on the rotating disk and the display device is driven to display white, it is visually confirmed whether there are thick lines or black spots, and whether the conductive pattern (mesh pattern or moiré suppressing portion) of the touch panel is conspicuous.

並且,將粗線或黑斑點、以及導電圖案的邊界不顯眼的情形設為「◎」,將粗線、黑斑點及導電圖案的邊界中任一種顯眼的情形設為「○」,將粗線、黑斑點及導電圖案的邊界中任意2種 顯眼的情形設為「△」,將粗線、黑斑點及導電圖案的邊界全部顯眼的情形設為「×」。 In addition, the case where the boundary between the thick line and the black spot and the conductive pattern is inconspicuous is "◎", and the case where any one of the boundary of the thick line, the black spot, and the conductive pattern is conspicuous is "○", and the thick line is set. Any two of the boundaries of black spots and conductive patterns In the case of conspicuousness, it is set to "△", and the case where all the boundaries of the thick line, the black spot, and the conductive pattern are conspicuous is set to "x".

(莫爾紋的評價) (Evaluation of Moire)

對於實施例1~實施例11,分別將導電性膜貼附於顯示裝置的顯示面板上後,將顯示裝置設置於旋轉盤上,驅動顯示裝置而使其顯示白色。在該狀態下,將旋轉盤在偏置角(bias angle)-20°~+20°之間旋轉,目視觀察並評價莫爾紋。 In each of the first to eleventh embodiments, after the conductive film was attached to the display panel of the display device, the display device was placed on the rotary disk, and the display device was driven to display white. In this state, the rotating disk was rotated at a bias angle of -20 ° to +20 °, and the moiré was visually observed and evaluated.

莫爾紋的評價是自顯示裝置的顯示畫面以觀察距離為0.5m進行,將莫爾紋不明顯的情形設為○,將在無問題的水準下見到少許莫爾紋的情形設為△,將莫爾紋明顯存在的情形設為×。並且,作為綜合評分,是將成為○的角度範圍為10°以上的情形設為A,將成為○的角度範圍小於10°的情形設為B,將無成為○的角度範圍且成為×的角度範圍小於30°的情形設為C,將無成為○的角度範圍且成為×的角度範圍為30°以上的情形設為D。 The moiré was evaluated by the observation screen from the display device at an observation distance of 0.5 m, the case where the moiré was not noticeable was set to ○, and the case where a little moiré was observed at the level of no problem was set to Δ. The case where the moiré is clearly present is set to x. In addition, the case where the angle range of ○ is 10° or more is A, and the case where the angle range of ○ is less than 10° is B, and the angle range which becomes ○ is not the angle of ×. In the case where the range is less than 30°, it is assumed to be C, and the case where there is no angular range of ○ and the angular range of × is 30° or more is assumed to be D.

[表3] [table 3]

根據表3,實施例1~實施例11中,視認性均良好,且開口率亦均為90%以上,關於莫爾紋,亦均為B以上的評價。特別是實施例2~實施例11中,視認性均為◎,開口率均為90%以上,莫爾紋均為A評價。 According to Table 3, in Examples 1 to 11, the visibility was good, and the aperture ratio was also 90% or more, and the Moiré was also evaluated as B or more. In particular, in Examples 2 to 11, the visibility was ◎, the aperture ratio was 90% or more, and the Moiré was evaluated as A.

因此可知,金屬細線16的線寬Wa可選自30μm以下,但較佳為10μm以下,格子24的一邊的長度La可選自50μm以上、900μm以下,但較佳為50μm以上、500μm以下。 Therefore, the line width Wa of the metal thin wires 16 can be selected from 30 μm or less, but preferably 10 μm or less, and the length La of one side of the lattice 24 can be selected from 50 μm or more and 900 μm or less, and preferably 50 μm or more and 500 μm or less.

[第2實施例] [Second Embodiment]

第2實施例中,在代表性的上述實施例9中,對改變莫爾紋抑制部的長度Lb時的視認性、開口率及莫爾紋進行評價。 In the second embodiment, in the above-described representative example 9, the visibility, the aperture ratio, and the moiré when the length Lb of the moiré suppressing portion is changed are evaluated.

(樣品1~樣品3) (sample 1 to sample 3)

樣品1、樣品2及樣品3中,將莫爾紋抑制部26的長度 Lb設為6μm、9μm及12μm,除此以外,以與上述實施例9相同的方式,製作樣品1、樣品2及樣品3的導電性膜。 In Sample 1, Sample 2, and Sample 3, the length of the moiré suppressing portion 26 is Conductive films of Sample 1, Sample 2, and Sample 3 were produced in the same manner as in Example 9 except that Lb was set to 6 μm, 9 μm, and 12 μm.

(樣品4) (sample 4)

樣品4中,以與上述實施例9相同的方式,製作導電性膜。 In the sample 4, a conductive film was produced in the same manner as in the above-described Example 9.

(樣品5~樣品7) (sample 5 to sample 7)

樣品5、樣品6及樣品7中,將莫爾紋抑制部26的長度Lb設為67μm、100μm及200μm,除此以外,以與上述實施例9相同的方式,製作樣品5、樣品6及樣品7的導電性膜。 In the sample 5, the sample 6 and the sample 7, the sample 5, the sample 6, and the sample were produced in the same manner as in the above-described Example 9 except that the length Lb of the moiré suppressing portion 26 was 67 μm, 100 μm, and 200 μm. 7 conductive film.

將樣品1~樣品7的評價結果表示於表4。 The evaluation results of Samples 1 to 7 are shown in Table 4.

根據表4,樣品1~樣品7中,視認性均良好,開口率亦均為94%以上,莫爾紋亦均為B以上的評價。其中,樣品2中,莫爾紋為B評價,但視認性為◎評價。樣品6中,視認性為○評價,但莫爾紋為A評價。特別是樣品3~樣品5中,視認性均為 ◎,開口率均為97%以上,莫爾紋均為A評價。 According to Table 4, in the samples 1 to 7, the visibility was good, the aperture ratio was also 94% or more, and the Moiré was also evaluated as B or more. In the sample 2, the Moire pattern was evaluated as B, but the visibility was evaluated as ◎. In the sample 6, the visibility was evaluated by ○, but the moiré was evaluated as A. Especially in samples 3 to 5, the visibility is ◎, the aperture ratio was 97% or more, and the Moire pattern was evaluated by A.

因此可知,長度Lb的下限較佳為2×Wa以上,更佳為3×Wa以上,尤佳為4×Wa以上;以及長度Lb的上限較佳為La以下,更佳為La/2以下,尤佳為La/3以下,特佳為La/4以下。 Therefore, the lower limit of the length Lb is preferably 2 × Wa or more, more preferably 3 × Wa or more, and particularly preferably 4 × Wa or more; and the upper limit of the length Lb is preferably La or less, more preferably La / 2 or less. It is especially good for La/3 or less, and particularly preferably La/4 or less.

[第3實施例] [Third embodiment]

第3實施例中,在代表性的上述實施例9中,對改變莫爾紋抑制部26的線寬Wb時的視認性、開口率及莫爾紋進行評價。 In the third embodiment, in the above-described representative embodiment 9, the visibility, the aperture ratio, and the moiré when the line width Wb of the moiré suppressing portion 26 is changed are evaluated.

(樣品8、樣品9) (Sample 8, Sample 9)

樣品8及樣品9中,將莫爾紋抑制部26的線寬Wb設為1.5μm及2.7μm,除此以外,以與上述實施例9相同的方式,製作樣品8及樣品9的導電性膜。 In the sample 8 and the sample 9, the conductive film of the sample 8 and the sample 9 was produced in the same manner as in the above-described Example 9 except that the line width Wb of the moiré suppressing portion 26 was 1.5 μm and 2.7 μm. .

(樣品10) (sample 10)

樣品10中,以與上述實施例9相同的方式,製作導電性膜。 In the sample 10, a conductive film was produced in the same manner as in the above-described Example 9.

(樣品11~樣品15) (sample 11 to sample 15)

樣品11、樣品12、樣品13、樣品14及樣品15中,將莫爾紋抑制部26的線寬Wb分別設為4.5μm、6.0μm、7.5μm、9.0μm及12.0μm,除此以外,以與上述實施例9相同的方式,製作樣品11、樣品12、樣品13、樣品14及樣品15的導電性膜。 In the sample 11, the sample 12, the sample 13, the sample 14, and the sample 15, the line width Wb of the moiré suppressing portion 26 is 4.5 μm, 6.0 μm, 7.5 μm, 9.0 μm, and 12.0 μm, respectively. In the same manner as in the above-described Example 9, the conductive films of Sample 11, Sample 12, Sample 13, Sample 14, and Sample 15 were produced.

將樣品8~樣品15的評價結果表示於表5。 The evaluation results of Samples 8 to 15 are shown in Table 5.

[表5] [table 5]

根據表5,樣品8~樣品15中,樣品8的莫爾紋為C評價,樣品15的視認性為△評價。除此以外的樣品9~樣品14中,視認性均良好,開口率亦均為95%以上,莫爾紋亦均為B以上的評價。特別是樣品9~樣品12中,視認性均為◎,開口率均為96%以上,莫爾紋均為A評價。 According to Table 5, in Samples 8 to 15, the Moire pattern of Sample 8 was evaluated as C, and the visibility of Sample 15 was evaluated as Δ. In the other samples 9 to 14, the visibility was good, the aperture ratio was also 95% or more, and the Moiré was also evaluated as B or more. In particular, in Samples 9 to 12, the visibility was ◎, the aperture ratio was 96% or more, and the Moire pattern was evaluated by A.

因此可知,金屬細線的線寬Wa與莫爾紋抑制部26的線寬Wb之比(Wb/Wa)較佳為0.9以上、3.0以下,更佳為0.9以上、2.5以下,尤佳為0.9以上、2.0以下,特佳為0.9以上、1.5以下。 Therefore, the ratio (Wb/Wa) of the line width Wa of the metal thin wire to the line width Wb of the moiré suppressing portion 26 is preferably 0.9 or more and 3.0 or less, more preferably 0.9 or more and 2.5 or less, and particularly preferably 0.9 or more. It is 2.0 or less, and it is especially preferably 0.9 or more and 1.5 or less.

另外,本發明的導電性膜並不限定於上述實施方式,在不脫離本發明的主旨的情況下,當然亦可採用各種構成。 Further, the conductive film of the present invention is not limited to the above embodiment, and various configurations may of course be employed without departing from the gist of the invention.

10‧‧‧導電性膜 10‧‧‧ Conductive film

14‧‧‧導電部 14‧‧‧Electrical Department

16‧‧‧金屬細線 16‧‧‧Metal thin wire

16a‧‧‧第1金屬細線 16a‧‧‧1st metal thin line

16b‧‧‧第2金屬細線 16b‧‧‧2nd metal wire

18‧‧‧開口部 18‧‧‧ openings

20‧‧‧篩孔圖案 20‧‧‧ mesh pattern

22、32‧‧‧交點 22, 32‧‧‧ intersection

24‧‧‧格子 24‧‧‧ lattice

26‧‧‧莫爾紋抑制部(突出部) 26‧‧‧ Moir suppression unit (protrusion)

28‧‧‧邊 28‧‧‧ side

30、34‧‧‧交叉部 30, 34‧‧‧ intersection

Claims (18)

一種觸控面板用導電性膜,其是具有由金屬細線(16)構成的導電部(14)與開口部(18)的導電性膜(10),該導電性膜的特徵在於:上述導電部(14)具有多條上述金屬細線(16)的交點(22),在上述金屬細線(16)上、且上述交點(22)以外的部分配置有突出部(26),上述導電部(14)與上述開口部(18)的組合形狀為篩孔形狀,上述突出部(26)在構成上述篩孔形狀的多條邊(28)中在至少1條邊(28)、且不與上述篩孔形狀的交點(22)重疊的位置,與上述1條邊(28)交叉而配置,在將上述1條邊(28)的寬度設為Wa、將上述1條邊(28)的長度設為La、將上述突出部(26)的延伸方向的長度設為Lb時,為Lb≧2×Wa且Lb≦La/2,並且上述篩孔形狀為正方形或菱形。 A conductive film for a touch panel, which is a conductive film (10) having a conductive portion (14) and an opening portion (18) made of a thin metal wire (16), wherein the conductive film is characterized in that the conductive portion (14) having an intersection (22) of the plurality of metal thin wires (16), and a protruding portion (26) is disposed on the metal thin wire (16) and at a portion other than the intersection (22), and the conductive portion (14) The combination with the opening portion (18) has a mesh shape, and the protruding portion (26) is at least one side (28) of the plurality of sides (28) constituting the mesh shape, and is not shaped like the mesh. The position where the intersection point (22) overlaps is disposed so as to intersect with the one side (28), and the width of the one side (28) is Wa, the length of the one side (28) is La, and the protrusion is provided. When the length of the extending direction of (26) is Lb, it is Lb ≧ 2 × Wa and Lb ≦ La / 2, and the mesh shape is a square or a diamond. 如申請專利範圍第1項所述的觸控面板用導電性膜,其中上述突出部(26)與上述1條邊(28)交叉而延伸配置,上述突出部(26)的形狀為以上述延伸方向為長軸的線段形狀、橢圓形狀、菱形形狀、平行四邊形形狀或多角形狀。 The conductive film for a touch panel according to claim 1, wherein the protruding portion (26) extends and intersects with the one side (28), and the protruding portion (26) has a shape extending in the extending direction It is a line segment shape, an elliptical shape, a rhombic shape, a parallelogram shape, or a polygonal shape of a long axis. 如申請專利範圍第2項所述的觸控面板用導電性膜,其中 上述突出部(26)為以上述延伸方向為長軸的線段形狀。 The conductive film for a touch panel according to claim 2, wherein The protruding portion (26) has a line segment shape in which the extending direction is a long axis. 如申請專利範圍第3項所述的觸控面板用導電性膜,其中與上述1條邊(28)交叉的其他邊、與上述突出部(26)的上述長軸大致平行。 The conductive film for a touch panel according to claim 3, wherein the other side crossing the one side (28) is substantially parallel to the long axis of the protruding portion (26). 如申請專利範圍第1項所述的觸控面板用導電性膜,其中為5μm≦Lb≦100μm。 The conductive film for a touch panel according to claim 1, wherein 5 μm ≦ Lb ≦ 100 μm. 如申請專利範圍第3項所述的觸控面板用導電性膜,其中在將上述1條邊(28)的寬度設為Wa、將上述突出部(26)的線寬設為Wb時,為0.995×Wa≦Wb≦3×Wa。 The conductive film for a touch panel according to claim 3, wherein when the width of the one side (28) is Wa and the line width of the protruding portion (26) is Wb, it is 0.995. ×Wa≦Wb≦3×Wa. 如申請專利範圍第1項所述的觸控面板用導電性膜,其中在將自上述篩孔形狀的交點(22)至上述1條邊(28)上的上述突出部(26)的中心位置為止的距離設為Da、將上述1條邊(28)的長度設為La時,為0.1×La≦Da≦0.9×La。 The conductive film for a touch panel according to the first aspect of the invention, wherein the intersection (22) from the mesh shape to the center of the protruding portion (26) on the one side (28) When the distance is Da and the length of the one side (28) is La, it is 0.1 × La ≦ Da ≦ 0.9 × La. 如申請專利範圍第3項所述的觸控面板用導電性膜,其中上述突出部(26)的線寬(Wb)為30μm以下。 The conductive film for a touch panel according to the third aspect of the invention, wherein the protruding portion (26) has a line width (Wb) of 30 μm or less. 如申請專利範圍第3項所述的觸控面板用導電性膜,其中 上述1條邊(28)的長度(La)為50μm以上、900μm以下。 The conductive film for a touch panel according to claim 3, wherein The length (La) of the one side (28) is 50 μm or more and 900 μm or less. 如申請專利範圍第1項所述的觸控面板用導電性膜,其中上述導電部(14)具有包含多個上述篩孔形狀的篩孔圖案(20),多個上述突出部(26)相對於上述篩孔圖案(20)而隨機地配置。 The conductive film for a touch panel according to claim 1, wherein the conductive portion (14) has a mesh pattern (20) including a plurality of mesh shapes, and the plurality of protruding portions (26) are opposed to each other. The mesh pattern (20) is randomly arranged. 如申請專利範圍第10項所述的觸控面板用導電性膜,其中在構成上述篩孔圖案(20)的上述多個篩孔形狀中,隨機地存在未配置上述突出部(26)的篩孔形狀。 The conductive film for a touch panel according to claim 10, wherein among the plurality of mesh shapes constituting the mesh pattern (20), the mesh in which the protruding portion (26) is not disposed is randomly present Hole shape. 如申請專利範圍第10項所述的觸控面板用導電性膜,其中在構成上述篩孔圖案(20)的上述多個篩孔形狀中,上述突出部(26)相對於配置有上述突出部(26)的1種以上的篩孔形狀的配置位置為隨機。 The conductive film for a touch panel according to claim 10, wherein the protruding portion (26) is disposed with respect to the protruding portion in the plurality of mesh shapes constituting the mesh pattern (20) The arrangement position of one or more kinds of mesh shapes of (26) is random. 如申請專利範圍第10項所述的觸控面板用導電性膜,其中在配置有上述突出部(26)的上述1個以上篩孔形狀中,在多條邊(28)上配置有上述突出部(26)的篩孔形狀中,上述突出部(26)在上述多條邊(28)上的配置位置為隨機。 The conductive film for a touch panel according to claim 10, wherein the protruding portion is disposed on the plurality of sides (28) of the one or more mesh shapes in which the protruding portion (26) is disposed In the mesh shape of (26), the arrangement position of the protruding portion (26) on the plurality of sides (28) is random. 如申請專利範圍第1項所述的觸控面板用導電性膜,其中在自上述篩孔形狀的1個交點(22)呈放射狀延伸的多條邊(28)上分別配置的上述突出部(26)中,至少1個上述突出部(26)自上述1個交點(22)至中心位置為止的距離與其他不同。 The conductive film for a touch panel according to the first aspect of the invention, wherein the protruding portion is disposed on a plurality of sides (28) radially extending from one intersection (22) of the mesh shape ( In 26), the distance between at least one of the protruding portions (26) from the one intersection point (22) to the center position is different from the others. 如申請專利範圍第1項所述的觸控面板用導電性膜,其中鄰接的邊(28)的分別配置的上述突出部(26),距分別對應的交 點(22)的距離不同。 The conductive film for a touch panel according to the first aspect of the invention, wherein the protruding portions (26) of the adjacent sides (28) are respectively disposed corresponding to each other The distance of point (22) is different. 如申請專利範圍第1項所述的觸控面板用導電性膜,其中在將上述邊(28)的條數設為Na、將上述突出部(26)的個數設為Nb、將上述突出部(26)的配置率設為(Nb/Na)×100%時,上述配置率為10%以上、100%以下。 The conductive film for a touch panel according to the first aspect of the invention, wherein the number of the sides (28) is Na, the number of the protruding portions (26) is Nb, and the protrusion is When the arrangement ratio of the portion (26) is (Nb/Na) × 100%, the above-described arrangement ratio is 10% or more and 100% or less. 如申請專利範圍第1項所述的觸控面板用導電性膜,其中上述金屬細線(16)的線寬為30μm以下。 The conductive film for a touch panel according to the first aspect of the invention, wherein the metal thin wires (16) have a line width of 30 μm or less. 如申請專利範圍第1項所述的觸控面板用導電性膜,其中開口率為90%以上。 The conductive film for a touch panel according to the first aspect of the invention, wherein the aperture ratio is 90% or more.
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WO2013168698A1 (en) 2013-11-14

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