TWI600981B - 度量衡方法及裝置、微影系統及元件製造方法 - Google Patents
度量衡方法及裝置、微影系統及元件製造方法 Download PDFInfo
- Publication number
- TWI600981B TWI600981B TW105134143A TW105134143A TWI600981B TW I600981 B TWI600981 B TW I600981B TW 105134143 A TW105134143 A TW 105134143A TW 105134143 A TW105134143 A TW 105134143A TW I600981 B TWI600981 B TW I600981B
- Authority
- TW
- Taiwan
- Prior art keywords
- asymmetry
- target structure
- target
- measurements
- measurement
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361863150P | 2013-08-07 | 2013-08-07 | |
| US201461975312P | 2014-04-04 | 2014-04-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201704898A TW201704898A (zh) | 2017-02-01 |
| TWI600981B true TWI600981B (zh) | 2017-10-01 |
Family
ID=51211228
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105134143A TWI600981B (zh) | 2013-08-07 | 2014-08-04 | 度量衡方法及裝置、微影系統及元件製造方法 |
| TW106126036A TWI636341B (zh) | 2013-08-07 | 2014-08-04 | 量測微影程序之參數之方法 |
| TW103126643A TWI563345B (en) | 2013-08-07 | 2014-08-04 | Metrology method and apparatus, lithographic system and device manufacturing method |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106126036A TWI636341B (zh) | 2013-08-07 | 2014-08-04 | 量測微影程序之參數之方法 |
| TW103126643A TWI563345B (en) | 2013-08-07 | 2014-08-04 | Metrology method and apparatus, lithographic system and device manufacturing method |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US9910366B2 (https=) |
| JP (2) | JP6336068B2 (https=) |
| KR (2) | KR101855243B1 (https=) |
| CN (2) | CN108398856B (https=) |
| IL (1) | IL243854B (https=) |
| NL (1) | NL2013210A (https=) |
| TW (3) | TWI600981B (https=) |
| WO (1) | WO2015018625A1 (https=) |
Families Citing this family (84)
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| US9927718B2 (en) * | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
| US10890436B2 (en) | 2011-07-19 | 2021-01-12 | Kla Corporation | Overlay targets with orthogonal underlayer dummyfill |
| NL2011477A (en) * | 2012-10-10 | 2014-04-14 | Asml Netherlands Bv | Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method. |
| WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| CN108398856B (zh) | 2013-08-07 | 2020-10-16 | Asml荷兰有限公司 | 量测方法和设备、光刻系统和器件制造方法 |
| SG11201703585RA (en) * | 2014-11-25 | 2017-06-29 | Kla Tencor Corp | Analyzing and utilizing landscapes |
| IL290735B2 (en) | 2014-11-26 | 2023-03-01 | Asml Netherlands Bv | Metrological method, computer product and system |
| WO2016124393A1 (en) | 2015-02-04 | 2016-08-11 | Asml Netherlands B.V. | Metrology method and apparatus, computer program and lithographic system |
| CN113050388B (zh) | 2015-04-10 | 2024-11-05 | Asml荷兰有限公司 | 用于检测及量测的方法与装置 |
| WO2016169901A1 (en) * | 2015-04-21 | 2016-10-27 | Asml Netherlands B.V. | Metrology method and apparatus, computer program and lithographic system |
| TWI656409B (zh) * | 2015-09-09 | 2019-04-11 | 美商克萊譚克公司 | 基於輔助電磁場之引入之一階散射測量疊加之新方法 |
| WO2017053150A1 (en) * | 2015-09-21 | 2017-03-30 | Kla-Tencor Corporation | Method and system for process control with flexible sampling |
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| US10115621B2 (en) | 2016-05-13 | 2018-10-30 | Globalfoundries Inc. | Method for in-die overlay control using FEOL dummy fill layer |
| JP6753958B2 (ja) * | 2016-06-10 | 2020-09-09 | アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ | 半導体製造プロセスのための計測方法および装置 |
| CN113552779B (zh) | 2016-07-15 | 2025-02-25 | Asml荷兰有限公司 | 用于量测目标场的设计的方法和设备 |
| US10048132B2 (en) * | 2016-07-28 | 2018-08-14 | Kla-Tencor Corporation | Simultaneous capturing of overlay signals from multiple targets |
| EP3293574A1 (en) | 2016-09-09 | 2018-03-14 | ASML Netherlands B.V. | Metrology method, apparatus and computer program |
| KR102265164B1 (ko) * | 2016-09-27 | 2021-06-15 | 에이에스엠엘 네델란즈 비.브이. | 계측 레시피 선택 |
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| CN118299285B (zh) * | 2024-06-06 | 2024-08-16 | 华芯程(杭州)科技有限公司 | 多重图形蚀刻补偿方法、装置、介质、程序产品及终端 |
| WO2025261742A1 (en) | 2024-06-20 | 2025-12-26 | Stichting Nederlandse Wetenschappelijk Onderzoek Instituten | Method of improving an image |
| WO2026017503A1 (en) | 2024-07-17 | 2026-01-22 | Stichting Nederlandse Wetenschappelijk Onderzoek Instituten | Method of correcting an image |
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| US7408642B1 (en) * | 2006-02-17 | 2008-08-05 | Kla-Tencor Technologies Corporation | Registration target design for managing both reticle grid error and wafer overlay |
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| CN102483582B (zh) * | 2009-08-24 | 2016-01-20 | Asml荷兰有限公司 | 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底 |
| DE202009012606U1 (de) * | 2009-09-18 | 2010-01-14 | Sma Solar Technology Ag | Steckbare elektrische Verbindung zwischen zwei Bauteile aufweisenden Gehäusen |
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| US10107621B2 (en) * | 2012-02-15 | 2018-10-23 | Nanometrics Incorporated | Image based overlay measurement with finite gratings |
| KR101761735B1 (ko) * | 2012-03-27 | 2017-07-26 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법 |
| US9714827B2 (en) * | 2012-07-05 | 2017-07-25 | Asml Netherlands B.V. | Metrology method and apparatus, lithographic system, device manufacturing method and substrate |
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| US20110255066A1 (en) * | 2008-06-11 | 2011-10-20 | Asml Netherlands B.V. | Apparatus and Method for Inspecting a Substrate |
| WO2011012624A1 (en) * | 2009-07-31 | 2011-02-03 | Asml Netherlands B.V. | Metrology method and apparatus, lithographic system, and lithographic processing cell |
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| US20130100427A1 (en) * | 2011-10-24 | 2013-04-25 | Asml Netherlands B.V. | Metrology Method and Apparatus, and Device Manufacturing Method |
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| US20190049860A1 (en) | 2019-02-14 |
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| US20190278190A1 (en) | 2019-09-12 |
| CN108398856B (zh) | 2020-10-16 |
| TWI636341B (zh) | 2018-09-21 |
| KR102124204B1 (ko) | 2020-06-18 |
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