NL2013210A - Metrology method and apparatus, lithographic system and device manufacturing method. - Google Patents
Metrology method and apparatus, lithographic system and device manufacturing method. Download PDFInfo
- Publication number
- NL2013210A NL2013210A NL2013210A NL2013210A NL2013210A NL 2013210 A NL2013210 A NL 2013210A NL 2013210 A NL2013210 A NL 2013210A NL 2013210 A NL2013210 A NL 2013210A NL 2013210 A NL2013210 A NL 2013210A
- Authority
- NL
- Netherlands
- Prior art keywords
- overlay
- asymmetry
- target
- substrate
- grating
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361863150P | 2013-08-07 | 2013-08-07 | |
| US201361863150 | 2013-08-07 | ||
| US201461975312P | 2014-04-04 | 2014-04-04 | |
| US201461975312 | 2014-04-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2013210A true NL2013210A (en) | 2015-02-10 |
Family
ID=51211228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2013210A NL2013210A (en) | 2013-08-07 | 2014-07-18 | Metrology method and apparatus, lithographic system and device manufacturing method. |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US9910366B2 (https=) |
| JP (2) | JP6336068B2 (https=) |
| KR (2) | KR101855243B1 (https=) |
| CN (2) | CN108398856B (https=) |
| IL (1) | IL243854B (https=) |
| NL (1) | NL2013210A (https=) |
| TW (3) | TWI600981B (https=) |
| WO (1) | WO2015018625A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111095112A (zh) * | 2017-09-11 | 2020-05-01 | Asml荷兰有限公司 | 光刻过程中的量测 |
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| CN113050388B (zh) | 2015-04-10 | 2024-11-05 | Asml荷兰有限公司 | 用于检测及量测的方法与装置 |
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| JP6008851B2 (ja) * | 2010-07-19 | 2016-10-19 | エーエスエムエル ネザーランズ ビー．ブイ． | オーバレイ誤差を決定する方法及び装置 |
| KR101492205B1 (ko) | 2010-11-12 | 2015-02-10 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법 |
| US9223227B2 (en) | 2011-02-11 | 2015-12-29 | Asml Netherlands B.V. | Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method |
| NL2009294A (en) * | 2011-08-30 | 2013-03-04 | Asml Netherlands Bv | Method and apparatus for determining an overlay error. |
| NL2009508A (en) * | 2011-10-24 | 2013-04-25 | Asml Netherlands Bv | Metrology method and apparatus, and device manufacturing method. |
| US10107621B2 (en) * | 2012-02-15 | 2018-10-23 | Nanometrics Incorporated | Image based overlay measurement with finite gratings |
| KR101761735B1 (ko) * | 2012-03-27 | 2017-07-26 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법 |
| US9714827B2 (en) * | 2012-07-05 | 2017-07-25 | Asml Netherlands B.V. | Metrology method and apparatus, lithographic system, device manufacturing method and substrate |
| CN108398856B (zh) | 2013-08-07 | 2020-10-16 | Asml荷兰有限公司 | 量测方法和设备、光刻系统和器件制造方法 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111095112A (zh) * | 2017-09-11 | 2020-05-01 | Asml荷兰有限公司 | 光刻过程中的量测 |
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| US10725386B2 (en) | 2020-07-28 |
| US20190049860A1 (en) | 2019-02-14 |
| US20160161864A1 (en) | 2016-06-09 |
| TW201809902A (zh) | 2018-03-16 |
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| US20180196357A1 (en) | 2018-07-12 |
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| WO2015018625A1 (en) | 2015-02-12 |
| KR20160042008A (ko) | 2016-04-18 |
| CN108398856A (zh) | 2018-08-14 |
| CN105452962A (zh) | 2016-03-30 |
| KR101855243B1 (ko) | 2018-05-04 |
| TWI563345B (en) | 2016-12-21 |
| US9910366B2 (en) | 2018-03-06 |
| US10331041B2 (en) | 2019-06-25 |
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| CN105452962B (zh) | 2018-02-09 |
| TWI600981B (zh) | 2017-10-01 |
| IL243854B (en) | 2021-01-31 |
| US20190278190A1 (en) | 2019-09-12 |
| CN108398856B (zh) | 2020-10-16 |
| TWI636341B (zh) | 2018-09-21 |
| KR102124204B1 (ko) | 2020-06-18 |
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