TWI595571B - 有機半導體膜的形成方法 - Google Patents

有機半導體膜的形成方法 Download PDF

Info

Publication number
TWI595571B
TWI595571B TW103106369A TW103106369A TWI595571B TW I595571 B TWI595571 B TW I595571B TW 103106369 A TW103106369 A TW 103106369A TW 103106369 A TW103106369 A TW 103106369A TW I595571 B TWI595571 B TW I595571B
Authority
TW
Taiwan
Prior art keywords
organic semiconductor
substrate
semiconductor film
cover member
forming
Prior art date
Application number
TW103106369A
Other languages
English (en)
Chinese (zh)
Other versions
TW201440149A (zh
Inventor
宇佐美由久
Original Assignee
富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士軟片股份有限公司 filed Critical 富士軟片股份有限公司
Publication of TW201440149A publication Critical patent/TW201440149A/zh
Application granted granted Critical
Publication of TWI595571B publication Critical patent/TWI595571B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
TW103106369A 2013-03-15 2014-02-26 有機半導體膜的形成方法 TWI595571B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013054250A JP6061743B2 (ja) 2013-03-15 2013-03-15 有機半導体膜の形成方法

Publications (2)

Publication Number Publication Date
TW201440149A TW201440149A (zh) 2014-10-16
TWI595571B true TWI595571B (zh) 2017-08-11

Family

ID=51536514

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103106369A TWI595571B (zh) 2013-03-15 2014-02-26 有機半導體膜的形成方法

Country Status (6)

Country Link
US (1) US9472760B2 (enExample)
EP (1) EP2975636B1 (enExample)
JP (1) JP6061743B2 (enExample)
CN (1) CN105144357B (enExample)
TW (1) TWI595571B (enExample)
WO (1) WO2014141838A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017134991A1 (ja) * 2016-02-03 2017-08-10 富士フイルム株式会社 有機半導体膜の製造装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012026333A1 (ja) * 2010-08-23 2012-03-01 ソニー株式会社 有機薄膜の形成方法および形成装置、ならびに有機デバイスの製造方法
US20120129296A1 (en) * 2009-05-26 2012-05-24 Imec Method for forming an organic material layer on a substrate
US20120193618A1 (en) * 2009-10-02 2012-08-02 Osaka University Method for manufacturing organic semiconductor film, and organic semiconductor film array

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5092269B2 (ja) * 2006-04-26 2012-12-05 コニカミノルタホールディングス株式会社 有機半導体薄膜および有機半導体デバイスの製造方法
EP2028683B1 (en) * 2006-05-24 2017-12-27 Nissan Chemical Industries, Ltd. Process for producing an organic transistor.
CN101461047B (zh) * 2006-06-07 2011-06-15 松下电器产业株式会社 半导体元件及其制造方法以及电子器件及其制造方法
US9741901B2 (en) * 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
JP5590659B2 (ja) * 2010-03-01 2014-09-17 国立大学法人岩手大学 磁場中有機単結晶薄膜作成法及び作成装置
JP2013040124A (ja) * 2011-08-15 2013-02-28 Osaka Univ 自己組織化単分子膜形成用の化合物及びそれを用いた有機半導体素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120129296A1 (en) * 2009-05-26 2012-05-24 Imec Method for forming an organic material layer on a substrate
US20120193618A1 (en) * 2009-10-02 2012-08-02 Osaka University Method for manufacturing organic semiconductor film, and organic semiconductor film array
WO2012026333A1 (ja) * 2010-08-23 2012-03-01 ソニー株式会社 有機薄膜の形成方法および形成装置、ならびに有機デバイスの製造方法

Also Published As

Publication number Publication date
EP2975636B1 (en) 2020-10-21
US9472760B2 (en) 2016-10-18
WO2014141838A1 (ja) 2014-09-18
JP6061743B2 (ja) 2017-01-18
EP2975636A4 (en) 2016-03-30
US20150372233A1 (en) 2015-12-24
CN105144357B (zh) 2017-07-14
CN105144357A (zh) 2015-12-09
EP2975636A1 (en) 2016-01-20
TW201440149A (zh) 2014-10-16
JP2014179568A (ja) 2014-09-25

Similar Documents

Publication Publication Date Title
US8921152B2 (en) Method for manufacturing organic semiconductor film, and organic semiconductor film array
CN111564558B (zh) 有机晶态薄膜的制备方法及有机场效应晶体管
KR101451301B1 (ko) 주형을 이용한 패터닝된 자가조립식 유기 박막 전자 소자의 제조 방법 및 이를 통해 제조되는 패터닝된 자가조립식 유기 박막 전자 소자
WO2013065582A1 (ja) 有機半導体素子の製造方法、有機半導体素子、有機単結晶薄膜の成長方法、有機単結晶薄膜、電子機器および有機単結晶薄膜群
CN105185910B (zh) 利用毛笔制备有机半导体单晶微纳线阵列的方法
CN103779427A (zh) 一种氧化物薄膜晶体管及其制备方法
CN105514039A (zh) 一种基于喷墨打印技术的有机薄膜晶体管器件的优化方法
US9070881B2 (en) Method of manufacturing an organic semiconductor thin film
TWI595571B (zh) 有機半導體膜的形成方法
US20100078632A1 (en) Electronic element
CN105264683B (zh) 有机薄膜晶体管及其制造和使用方法
JP6071925B2 (ja) 有機半導体膜の形成方法および有機半導体膜の形成装置
WO2018082327A1 (en) Method of fabricating electrodes, method of fabricating thin film transistor, method of fabricating array substrate, thin film transistor, array substrate, and display apparatus
US20160013411A1 (en) Method of manufacturing multi-layered thin films, multi-layered thin films formed by the same, method of manufacturing organic thin film transistor including the same, and organic thin film transistor manufactured by the same
US7855121B2 (en) Method of forming organic thin film and method of manufacturing semiconductor device using the same
Kim et al. Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors
Park et al. The surface energy-dictated initial growth of a pentacene film on a polymeric adhesion layer for field-effect transistors
CN113540353B (zh) 一种取向化气液界面聚合物半导体薄膜及其构筑方法和应用
KR102275058B1 (ko) 패턴화된 페로브스카이트막의 제조방법 및 이를 이용하는 장치
CN107833927A (zh) 一种氧化物薄膜晶体管及其制备方法
CN102208364A (zh) 与卷对卷技术兼容的大面积有机薄膜晶体管列阵制备方法
JP6202714B2 (ja) 薄膜トランジスタ素子の製造方法及び塗布型半導体層のパターニング方法
Wang et al. High-performance excimer-laser-crystallized polycrystalline silicon thin-film transistors with the pre-patterned recessed channel
KR20170078346A (ko) 존 캐스팅을 이용한 유기 반도체 및 절연성 고분자 포함 유기 박막의 제조방법 및 이에 의해 제조된 유기 박막을 포함하는 유기 박막 트랜지스터
JP2013254874A (ja) 自己形成２層分離による有機半導体薄膜形成方法、有機半導体薄膜、及び有機半導体デバイス

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees