CN103779427A - 一种氧化物薄膜晶体管及其制备方法 - Google Patents
一种氧化物薄膜晶体管及其制备方法 Download PDFInfo
- Publication number
- CN103779427A CN103779427A CN201410066332.XA CN201410066332A CN103779427A CN 103779427 A CN103779427 A CN 103779427A CN 201410066332 A CN201410066332 A CN 201410066332A CN 103779427 A CN103779427 A CN 103779427A
- Authority
- CN
- China
- Prior art keywords
- film transistor
- thin film
- semiconductor layer
- oxide semiconductor
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 239000010410 layer Substances 0.000 claims abstract description 72
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000011241 protective layer Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000011810 insulating material Substances 0.000 claims abstract description 21
- 238000007639 printing Methods 0.000 claims abstract description 17
- 238000004528 spin coating Methods 0.000 claims abstract description 11
- 125000006575 electron-withdrawing group Chemical group 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims description 18
- 230000000903 blocking effect Effects 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 12
- 238000007654 immersion Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000010422 painting Methods 0.000 claims description 8
- 125000002252 acyl group Chemical group 0.000 claims description 6
- 125000004442 acylamino group Chemical group 0.000 claims description 6
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 6
- 238000007738 vacuum evaporation Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- -1 aldehyde radical Chemical class 0.000 claims description 4
- 150000003384 small molecules Chemical class 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 238000003980 solgel method Methods 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 3
- 230000003827 upregulation Effects 0.000 abstract description 2
- 239000005416 organic matter Substances 0.000 abstract 1
- 238000002791 soaking Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 12
- 230000033228 biological regulation Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910000583 Nd alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005001 laminate film Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VAJVDSVGBWFCLW-UHFFFAOYSA-N 3-Phenyl-1-propanol Chemical compound OCCCC1=CC=CC=C1 VAJVDSVGBWFCLW-UHFFFAOYSA-N 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- DYUQAZSOFZSPHD-UHFFFAOYSA-N Phenylpropyl alcohol Natural products CCC(O)C1=CC=CC=C1 DYUQAZSOFZSPHD-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 1
- ZTXUGHMGHRMVKB-UHFFFAOYSA-N aluminum;neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Nd+3] ZTXUGHMGHRMVKB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229920005565 cyclic polymer Polymers 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229960003351 prussian blue Drugs 0.000 description 1
- 239000013225 prussian blue Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410066332.XA CN103779427B (zh) | 2014-02-26 | 2014-02-26 | 一种氧化物薄膜晶体管及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410066332.XA CN103779427B (zh) | 2014-02-26 | 2014-02-26 | 一种氧化物薄膜晶体管及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103779427A true CN103779427A (zh) | 2014-05-07 |
CN103779427B CN103779427B (zh) | 2016-06-29 |
Family
ID=50571471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410066332.XA Active CN103779427B (zh) | 2014-02-26 | 2014-02-26 | 一种氧化物薄膜晶体管及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103779427B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104009093A (zh) * | 2014-06-13 | 2014-08-27 | 青岛大学 | 一种高k介电层水性氧化铟薄膜晶体管的制备方法 |
WO2016033838A1 (zh) * | 2014-09-02 | 2016-03-10 | 深圳市华星光电技术有限公司 | 氧化物半导体tft基板的制作方法及结构 |
CN105655298A (zh) * | 2016-01-05 | 2016-06-08 | 深圳市华星光电技术有限公司 | 一种tft液晶显示模组及其封装结构和封装方法 |
WO2017186094A1 (zh) * | 2016-04-29 | 2017-11-02 | 京东方科技集团股份有限公司 | 薄膜晶体管及制备方法、阵列基板及制备方法、显示面板、显示装置 |
CN107833927A (zh) * | 2017-11-16 | 2018-03-23 | 佛山科学技术学院 | 一种氧化物薄膜晶体管及其制备方法 |
CN109477833A (zh) * | 2017-07-04 | 2019-03-15 | 株式会社Ndd | 生物传感装置及其制造方法 |
CN109545845A (zh) * | 2018-10-29 | 2019-03-29 | 佛山科学技术学院 | 一种薄膜晶体管的氧化物半导体材料、薄膜晶体管及其制备方法 |
CN110828579A (zh) * | 2019-10-29 | 2020-02-21 | 深圳市华星光电半导体显示技术有限公司 | Bce igzo tft器件及其制作方法 |
CN111969067A (zh) * | 2020-07-21 | 2020-11-20 | 河南大学 | 一种氧化铟薄膜晶体管及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6281954B1 (en) * | 1999-11-18 | 2001-08-28 | Lg. Philips Lcd Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US20030107023A1 (en) * | 2001-12-06 | 2003-06-12 | Lg.Philips Lcd Co., Ltd. | Etchant for etching metal wiring layers and method for forming thin film transistor by using the same |
US20090142887A1 (en) * | 2007-12-03 | 2009-06-04 | Samsung Electronics Co., Ltd. | Methods of manufacturing an oxide semiconductor thin film transistor |
CN102786825A (zh) * | 2011-05-19 | 2012-11-21 | 三星电子株式会社 | 有机钝化层组合物及含有机钝化层的晶体管和电子器件 |
-
2014
- 2014-02-26 CN CN201410066332.XA patent/CN103779427B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6281954B1 (en) * | 1999-11-18 | 2001-08-28 | Lg. Philips Lcd Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US20030107023A1 (en) * | 2001-12-06 | 2003-06-12 | Lg.Philips Lcd Co., Ltd. | Etchant for etching metal wiring layers and method for forming thin film transistor by using the same |
US20090142887A1 (en) * | 2007-12-03 | 2009-06-04 | Samsung Electronics Co., Ltd. | Methods of manufacturing an oxide semiconductor thin film transistor |
CN102786825A (zh) * | 2011-05-19 | 2012-11-21 | 三星电子株式会社 | 有机钝化层组合物及含有机钝化层的晶体管和电子器件 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104009093A (zh) * | 2014-06-13 | 2014-08-27 | 青岛大学 | 一种高k介电层水性氧化铟薄膜晶体管的制备方法 |
CN104009093B (zh) * | 2014-06-13 | 2016-08-31 | 青岛大学 | 一种高k介电层水性氧化铟薄膜晶体管的制备方法 |
WO2016033838A1 (zh) * | 2014-09-02 | 2016-03-10 | 深圳市华星光电技术有限公司 | 氧化物半导体tft基板的制作方法及结构 |
CN105655298A (zh) * | 2016-01-05 | 2016-06-08 | 深圳市华星光电技术有限公司 | 一种tft液晶显示模组及其封装结构和封装方法 |
WO2017117829A1 (zh) * | 2016-01-05 | 2017-07-13 | 深圳市华星光电技术有限公司 | 一种tft液晶显示模组及其封装结构和封装方法 |
US10497563B2 (en) | 2016-04-29 | 2019-12-03 | Boe Technology Group Co., Ltd. | Thin film transistor and method for manufacturing the same, array substrate and method for manufacturing the same, display panel and display device |
WO2017186094A1 (zh) * | 2016-04-29 | 2017-11-02 | 京东方科技集团股份有限公司 | 薄膜晶体管及制备方法、阵列基板及制备方法、显示面板、显示装置 |
CN109477833A (zh) * | 2017-07-04 | 2019-03-15 | 株式会社Ndd | 生物传感装置及其制造方法 |
CN107833927A (zh) * | 2017-11-16 | 2018-03-23 | 佛山科学技术学院 | 一种氧化物薄膜晶体管及其制备方法 |
CN109545845A (zh) * | 2018-10-29 | 2019-03-29 | 佛山科学技术学院 | 一种薄膜晶体管的氧化物半导体材料、薄膜晶体管及其制备方法 |
CN110828579A (zh) * | 2019-10-29 | 2020-02-21 | 深圳市华星光电半导体显示技术有限公司 | Bce igzo tft器件及其制作方法 |
US11316050B2 (en) | 2019-10-29 | 2022-04-26 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | BCE IGZO TFT device and manufacturing method thereof |
CN111969067A (zh) * | 2020-07-21 | 2020-11-20 | 河南大学 | 一种氧化铟薄膜晶体管及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103779427B (zh) | 2016-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103779427B (zh) | 一种氧化物薄膜晶体管及其制备方法 | |
Huang et al. | High-mobility solution-processed tin oxide thin-film transistors with high-κ alumina dielectric working in enhancement mode | |
US8822988B2 (en) | Thin-film transistor (TFT) with a bi-layer channel | |
US10497563B2 (en) | Thin film transistor and method for manufacturing the same, array substrate and method for manufacturing the same, display panel and display device | |
CN106129122B (zh) | 氧化物薄膜晶体管及其制备方法、阵列基板、显示装置 | |
CN105161503B (zh) | 非晶硅半导体tft背板结构 | |
CN102637591B (zh) | 一种氧化物半导体上电极层的刻蚀方法 | |
CN102332404A (zh) | 基于阳极氧化绝缘层的薄膜晶体管的制备方法 | |
CN106128944A (zh) | 金属氧化物薄膜晶体管阵列基板的制作方法 | |
CN106024838A (zh) | 基于混合tft结构的显示元件 | |
CN103839973A (zh) | 有源矩阵有机发光二极管阵列基板及制作方法和显示装置 | |
JP2010087223A (ja) | 薄膜トランジスタおよびアクティブマトリクスディスプレイ | |
CN104218096A (zh) | 钙钛矿结构的无机金属氧化物半导体薄膜及其金属氧化物薄膜晶体管 | |
CN102403363A (zh) | 双层氧化物薄膜晶体管及其制备方法 | |
CN104701328A (zh) | 一种阵列基板及其制造方法、显示装置 | |
KR20180010173A (ko) | 활성 층, 박막 트랜지스터, 어레이 기판, 및 디스플레이 장치 및 제조 방법들 | |
CN103325842B (zh) | 氧化物半导体薄膜及一种薄膜晶体管 | |
JP2012028481A (ja) | 電界効果型トランジスタ及びその製造方法 | |
CN104979406A (zh) | 薄膜晶体管、阵列基板及其制备方法和显示装置 | |
WO2016033836A1 (zh) | 氧化物半导体tft基板的制作方法及结构 | |
CN103311313B (zh) | 氧化物薄膜晶体管及其制备方法 | |
CN105321827A (zh) | 湿法刻蚀型氧化物薄膜晶体管的制备方法及所制备的薄膜晶体管 | |
CN102623510A (zh) | 基于氧化钽绝缘层的薄膜晶体管及其制备方法 | |
CN102420289A (zh) | 一种掺钽氧化物半导体材料及其制备方法和应用 | |
CN103094353A (zh) | 一种薄膜晶体管结构、液晶显示装置及一种制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200102 Address after: 510641 Tianhe District, Guangdong, No. five road, No. 381, Patentee after: Wang Lei Address before: 510640 Tianhe District, Guangdong, No. five road, No. 381, Patentee before: South China University of Technology |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200224 Address after: 510640 Tianhe District, Guangdong, No. five road, No. 381, Co-patentee after: Guangzhou South China University of Technology Asset Management Co.,Ltd. Patentee after: Wang Lei Address before: 510641 Tianhe District, Guangdong, No. five road, No. 381, Patentee before: Wang Lei |