CN105144357B - 有机半导体膜的形成方法 - Google Patents

有机半导体膜的形成方法 Download PDF

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Publication number
CN105144357B
CN105144357B CN201480011019.4A CN201480011019A CN105144357B CN 105144357 B CN105144357 B CN 105144357B CN 201480011019 A CN201480011019 A CN 201480011019A CN 105144357 B CN105144357 B CN 105144357B
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China
Prior art keywords
organic semiconductor
substrate
semiconductor film
cover member
solution
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Expired - Fee Related
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CN201480011019.4A
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English (en)
Chinese (zh)
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CN105144357A (zh
Inventor
宇佐美由久
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Fujifilm Corp
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Fujifilm Corp
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
CN201480011019.4A 2013-03-15 2014-02-19 有机半导体膜的形成方法 Expired - Fee Related CN105144357B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-054250 2013-03-15
JP2013054250A JP6061743B2 (ja) 2013-03-15 2013-03-15 有機半導体膜の形成方法
PCT/JP2014/053930 WO2014141838A1 (ja) 2013-03-15 2014-02-19 有機半導体膜の形成方法

Publications (2)

Publication Number Publication Date
CN105144357A CN105144357A (zh) 2015-12-09
CN105144357B true CN105144357B (zh) 2017-07-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480011019.4A Expired - Fee Related CN105144357B (zh) 2013-03-15 2014-02-19 有机半导体膜的形成方法

Country Status (6)

Country Link
US (1) US9472760B2 (enExample)
EP (1) EP2975636B1 (enExample)
JP (1) JP6061743B2 (enExample)
CN (1) CN105144357B (enExample)
TW (1) TWI595571B (enExample)
WO (1) WO2014141838A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3413338B1 (en) 2016-02-03 2019-07-10 FUJIFILM Corporation Organic semiconductor film production device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101461047A (zh) * 2006-06-07 2009-06-17 松下电器产业株式会社 半导体元件及其制造方法以及电子器件及其制造方法
WO2012026333A1 (ja) * 2010-08-23 2012-03-01 ソニー株式会社 有機薄膜の形成方法および形成装置、ならびに有機デバイスの製造方法
CN102598232A (zh) * 2009-10-02 2012-07-18 国立大学法人大阪大学 有机半导体膜的制造方法及有机半导体膜阵列
WO2013024678A1 (ja) * 2011-08-15 2013-02-21 国立大学法人大阪大学 自己組織化単分子膜形成用の化合物及びそれを用いた有機半導体素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5092269B2 (ja) * 2006-04-26 2012-12-05 コニカミノルタホールディングス株式会社 有機半導体薄膜および有機半導体デバイスの製造方法
US20090184347A1 (en) * 2006-05-24 2009-07-23 Nissan Chemical Industries, Ltd. Coating liquid for gate insulating film, gate insulating film and organic transistor
US9741901B2 (en) * 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
EP2435598B1 (en) * 2009-05-26 2017-11-29 Imec Method for forming an organic material layer on a substrate
JP5590659B2 (ja) * 2010-03-01 2014-09-17 国立大学法人岩手大学 磁場中有機単結晶薄膜作成法及び作成装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101461047A (zh) * 2006-06-07 2009-06-17 松下电器产业株式会社 半导体元件及其制造方法以及电子器件及其制造方法
CN102598232A (zh) * 2009-10-02 2012-07-18 国立大学法人大阪大学 有机半导体膜的制造方法及有机半导体膜阵列
WO2012026333A1 (ja) * 2010-08-23 2012-03-01 ソニー株式会社 有機薄膜の形成方法および形成装置、ならびに有機デバイスの製造方法
WO2013024678A1 (ja) * 2011-08-15 2013-02-21 国立大学法人大阪大学 自己組織化単分子膜形成用の化合物及びそれを用いた有機半導体素子

Also Published As

Publication number Publication date
TWI595571B (zh) 2017-08-11
US20150372233A1 (en) 2015-12-24
JP6061743B2 (ja) 2017-01-18
EP2975636B1 (en) 2020-10-21
EP2975636A1 (en) 2016-01-20
TW201440149A (zh) 2014-10-16
CN105144357A (zh) 2015-12-09
EP2975636A4 (en) 2016-03-30
WO2014141838A1 (ja) 2014-09-18
US9472760B2 (en) 2016-10-18
JP2014179568A (ja) 2014-09-25

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