TWI592513B - 具索引之直線式基板製程工具 - Google Patents
具索引之直線式基板製程工具 Download PDFInfo
- Publication number
- TWI592513B TWI592513B TW102134793A TW102134793A TWI592513B TW I592513 B TWI592513 B TW I592513B TW 102134793 A TW102134793 A TW 102134793A TW 102134793 A TW102134793 A TW 102134793A TW I592513 B TWI592513 B TW I592513B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- modules
- module
- processing tool
- disposed
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 250
- 238000000034 method Methods 0.000 claims description 54
- 239000007789 gas Substances 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000011068 loading method Methods 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 2
- 239000000314 lubricant Substances 0.000 claims description 2
- 238000000746 purification Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 12
- 238000005137 deposition process Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002783 friction material Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261711493P | 2012-10-09 | 2012-10-09 | |
| US14/034,921 US9406538B2 (en) | 2012-10-09 | 2013-09-24 | Indexed inline substrate processing tool |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201418517A TW201418517A (zh) | 2014-05-16 |
| TWI592513B true TWI592513B (zh) | 2017-07-21 |
Family
ID=50432986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102134793A TWI592513B (zh) | 2012-10-09 | 2013-09-26 | 具索引之直線式基板製程工具 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9406538B2 (enExample) |
| JP (1) | JP6285446B2 (enExample) |
| KR (1) | KR101782874B1 (enExample) |
| CN (1) | CN104704624B (enExample) |
| TW (1) | TWI592513B (enExample) |
| WO (1) | WO2014058612A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016043965A1 (en) * | 2014-09-19 | 2016-03-24 | Applied Materials, Inc. | Parallel plate inline substrate processing tool |
| CN112135923B (zh) * | 2018-06-08 | 2022-11-22 | 东芝三菱电机产业系统株式会社 | 成膜装置 |
| CN113874544B (zh) * | 2019-05-24 | 2025-06-27 | 应用材料公司 | 用于热处理的设备、基板处理系统、用于在基板处理期间支撑基板的载体、和用于感应加热在基板处理系统中的载体的方法 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR910003169B1 (ko) * | 1985-11-12 | 1991-05-20 | 가부시끼가이샤 한도다이 에네르기 겐뀨소 | 반도체 장치 제조 방법 및 장치 |
| JPS63303062A (ja) * | 1987-06-02 | 1988-12-09 | Nec Corp | 半導体集積回路の製造装置 |
| JP2948842B2 (ja) * | 1989-11-24 | 1999-09-13 | 日本真空技術株式会社 | インライン型ｃｖｄ装置 |
| DE4029905C2 (de) * | 1990-09-21 | 1993-10-28 | Leybold Ag | Vorrichtung für den Transport von Substraten |
| JPH06151413A (ja) * | 1992-11-02 | 1994-05-31 | Nippon Telegr & Teleph Corp <Ntt> | 熱処理装置 |
| US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
| JP3185493B2 (ja) * | 1993-09-07 | 2001-07-09 | 日新電機株式会社 | 薄膜気相成長装置 |
| JP3381443B2 (ja) | 1995-02-02 | 2003-02-24 | ソニー株式会社 | 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法 |
| JP2845773B2 (ja) * | 1995-04-27 | 1999-01-13 | 山形日本電気株式会社 | 常圧ｃｖｄ装置 |
| US6117266A (en) * | 1997-12-19 | 2000-09-12 | Interuniversifair Micro-Elektronica Cenirum (Imec Vzw) | Furnace for continuous, high throughput diffusion processes from various diffusion sources |
| WO1999025909A1 (en) * | 1997-11-14 | 1999-05-27 | Super Silicon Crystal Research Institute Corp. | Epitaxial growth furnace |
| JPH11147787A (ja) * | 1997-11-14 | 1999-06-02 | Super Silicon Kenkyusho:Kk | エピタキシャル成長炉 |
| JP2000177842A (ja) * | 1998-12-10 | 2000-06-27 | Mitsubishi Heavy Ind Ltd | 搬送装置及び真空処理システム |
| JP3842935B2 (ja) * | 1999-10-22 | 2006-11-08 | 三菱重工業株式会社 | トレイレス斜め基板搬送装置 |
| JP3806275B2 (ja) * | 1999-10-22 | 2006-08-09 | 三菱重工業株式会社 | 分割型トレイレス斜め基板搬送システム |
| JP4335743B2 (ja) * | 2004-05-26 | 2009-09-30 | 電気化学工業株式会社 | 成膜装置用の基板回転機構 |
| US20060099827A1 (en) * | 2004-11-05 | 2006-05-11 | Yoo Woo S | Photo-enhanced UV treatment of dielectric films |
| JP2008277698A (ja) * | 2007-05-07 | 2008-11-13 | Ebatekku:Kk | 基板搬送機構及びそれを備えた基板処理装置 |
| CN101842890A (zh) * | 2007-11-09 | 2010-09-22 | 佳能安内华股份有限公司 | 在线型晶圆输送装置 |
| US8637761B2 (en) | 2008-09-16 | 2014-01-28 | Silevo, Inc. | Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers |
| US8652259B2 (en) | 2008-10-09 | 2014-02-18 | Silevo, Inc. | Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition |
| US20100108134A1 (en) | 2008-10-31 | 2010-05-06 | Crystal Solar, Inc. | Thin two sided single crystal solar cell and manufacturing process thereof |
| US8298629B2 (en) * | 2009-02-25 | 2012-10-30 | Crystal Solar Incorporated | High throughput multi-wafer epitaxial reactor |
| US8673081B2 (en) | 2009-02-25 | 2014-03-18 | Crystal Solar, Inc. | High throughput multi-wafer epitaxial reactor |
| US20100310769A1 (en) * | 2009-06-07 | 2010-12-09 | Veeco Compound Semiconductor, Inc. | Continuous Feed Chemical Vapor Deposition System |
| CN102668031A (zh) * | 2009-10-28 | 2012-09-12 | 应用材料公司 | 用于等离子体增强化学气相沉积的腔室 |
| KR101129038B1 (ko) * | 2010-04-26 | 2012-03-27 | 주식회사 테라세미콘 | 인라인 기판처리 장치 |
| TW201210058A (en) | 2010-05-12 | 2012-03-01 | Applied Materials Inc | Method of manufacturing crystalline silicon solar cells using epitaxial deposition |
| US9240513B2 (en) | 2010-05-14 | 2016-01-19 | Solarcity Corporation | Dynamic support system for quartz process chamber |
| US9441295B2 (en) | 2010-05-14 | 2016-09-13 | Solarcity Corporation | Multi-channel gas-delivery system |
| US8562745B2 (en) * | 2010-05-21 | 2013-10-22 | Silevo, Inc. | Stable wafer-carrier system |
| KR101590684B1 (ko) * | 2010-08-27 | 2016-02-01 | 쌩-고벵 글래스 프랑스 | 복수의 다층체를 열처리하기 위한 장치 및 방법 |
| JP5757748B2 (ja) * | 2011-02-16 | 2015-07-29 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
| US20140060434A1 (en) * | 2012-09-04 | 2014-03-06 | Applied Materials, Inc. | Gas injector for high volume, low cost system for epitaxial silicon depositon |
-
2013
- 2013-09-24 CN CN201380051490.1A patent/CN104704624B/zh active Active
- 2013-09-24 US US14/034,921 patent/US9406538B2/en active Active
- 2013-09-24 KR KR1020157012155A patent/KR101782874B1/ko not_active Expired - Fee Related
- 2013-09-24 WO PCT/US2013/061404 patent/WO2014058612A1/en not_active Ceased
- 2013-09-24 JP JP2015535693A patent/JP6285446B2/ja not_active Expired - Fee Related
- 2013-09-26 TW TW102134793A patent/TWI592513B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104704624A (zh) | 2015-06-10 |
| WO2014058612A1 (en) | 2014-04-17 |
| US20140099778A1 (en) | 2014-04-10 |
| JP6285446B2 (ja) | 2018-02-28 |
| TW201418517A (zh) | 2014-05-16 |
| US9406538B2 (en) | 2016-08-02 |
| KR101782874B1 (ko) | 2017-09-28 |
| JP2015533195A (ja) | 2015-11-19 |
| KR20150066582A (ko) | 2015-06-16 |
| CN104704624B (zh) | 2017-06-09 |
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