CN104704624B - 具索引的串联基板处理工具 - Google Patents

具索引的串联基板处理工具 Download PDF

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Publication number
CN104704624B
CN104704624B CN201380051490.1A CN201380051490A CN104704624B CN 104704624 B CN104704624 B CN 104704624B CN 201380051490 A CN201380051490 A CN 201380051490A CN 104704624 B CN104704624 B CN 104704624B
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CN
China
Prior art keywords
substrate
module
modules
indexed
processing tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380051490.1A
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English (en)
Chinese (zh)
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CN104704624A (zh
Inventor
戴维·K·卡尔森
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN104704624A publication Critical patent/CN104704624A/zh
Application granted granted Critical
Publication of CN104704624B publication Critical patent/CN104704624B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3206—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201380051490.1A 2012-10-09 2013-09-24 具索引的串联基板处理工具 Active CN104704624B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261711493P 2012-10-09 2012-10-09
US61/711,493 2012-10-09
PCT/US2013/061404 WO2014058612A1 (en) 2012-10-09 2013-09-24 Indexed inline substrate processing tool
US14/034,921 US9406538B2 (en) 2012-10-09 2013-09-24 Indexed inline substrate processing tool
US14/034,921 2013-09-24

Publications (2)

Publication Number Publication Date
CN104704624A CN104704624A (zh) 2015-06-10
CN104704624B true CN104704624B (zh) 2017-06-09

Family

ID=50432986

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380051490.1A Active CN104704624B (zh) 2012-10-09 2013-09-24 具索引的串联基板处理工具

Country Status (6)

Country Link
US (1) US9406538B2 (enExample)
JP (1) JP6285446B2 (enExample)
KR (1) KR101782874B1 (enExample)
CN (1) CN104704624B (enExample)
TW (1) TWI592513B (enExample)
WO (1) WO2014058612A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106716649A (zh) * 2014-09-19 2017-05-24 应用材料公司 平行板式串联基板处理工具
KR20210005937A (ko) * 2018-06-08 2021-01-15 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 성막 장치
WO2020239193A1 (en) * 2019-05-24 2020-12-03 Applied Materials, Inc. Apparatus for heat treatment, substrate processing system and method for processing a substrate
KR20260011433A (ko) * 2024-07-16 2026-01-23 (주)에스티아이 기판 공정 시스템 및 이를 이용한 기판 공정 방법

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910003169B1 (ko) * 1985-11-12 1991-05-20 가부시끼가이샤 한도다이 에네르기 겐뀨소 반도체 장치 제조 방법 및 장치
JPS63303062A (ja) * 1987-06-02 1988-12-09 Nec Corp 半導体集積回路の製造装置
JP2948842B2 (ja) * 1989-11-24 1999-09-13 日本真空技術株式会社 インライン型ｃｖｄ装置
DE4029905C2 (de) * 1990-09-21 1993-10-28 Leybold Ag Vorrichtung für den Transport von Substraten
JPH06151413A (ja) * 1992-11-02 1994-05-31 Nippon Telegr & Teleph Corp <Ntt> 熱処理装置
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
JP3185493B2 (ja) * 1993-09-07 2001-07-09 日新電機株式会社 薄膜気相成長装置
JP3381443B2 (ja) 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
JP2845773B2 (ja) * 1995-04-27 1999-01-13 山形日本電気株式会社 常圧ｃｖｄ装置
US6117266A (en) * 1997-12-19 2000-09-12 Interuniversifair Micro-Elektronica Cenirum (Imec Vzw) Furnace for continuous, high throughput diffusion processes from various diffusion sources
JPH11147787A (ja) * 1997-11-14 1999-06-02 Super Silicon Kenkyusho:Kk エピタキシャル成長炉
US6262393B1 (en) * 1997-11-14 2001-07-17 Super Silicon Crystal Research Institute Corp. Epitaxial growth furnace
JP2000177842A (ja) * 1998-12-10 2000-06-27 Mitsubishi Heavy Ind Ltd 搬送装置及び真空処理システム
JP3842935B2 (ja) * 1999-10-22 2006-11-08 三菱重工業株式会社 トレイレス斜め基板搬送装置
JP3806275B2 (ja) * 1999-10-22 2006-08-09 三菱重工業株式会社 分割型トレイレス斜め基板搬送システム
JP4335743B2 (ja) * 2004-05-26 2009-09-30 電気化学工業株式会社 成膜装置用の基板回転機構
US20060099827A1 (en) * 2004-11-05 2006-05-11 Yoo Woo S Photo-enhanced UV treatment of dielectric films
JP2008277698A (ja) * 2007-05-07 2008-11-13 Ebatekku:Kk 基板搬送機構及びそれを備えた基板処理装置
JP4494523B2 (ja) * 2007-11-09 2010-06-30 キヤノンアネルバ株式会社 インライン型ウェハ搬送装置および基板搬送方法
US8637761B2 (en) 2008-09-16 2014-01-28 Silevo, Inc. Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers
US8652259B2 (en) * 2008-10-09 2014-02-18 Silevo, Inc. Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition
US20100108134A1 (en) 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin two sided single crystal solar cell and manufacturing process thereof
US8673081B2 (en) 2009-02-25 2014-03-18 Crystal Solar, Inc. High throughput multi-wafer epitaxial reactor
US8298629B2 (en) * 2009-02-25 2012-10-30 Crystal Solar Incorporated High throughput multi-wafer epitaxial reactor
US20100310769A1 (en) * 2009-06-07 2010-12-09 Veeco Compound Semiconductor, Inc. Continuous Feed Chemical Vapor Deposition System
CN102668031A (zh) * 2009-10-28 2012-09-12 应用材料公司 用于等离子体增强化学气相沉积的腔室
KR101129038B1 (ko) * 2010-04-26 2012-03-27 주식회사 테라세미콘 인라인 기판처리 장치
TW201210058A (en) 2010-05-12 2012-03-01 Applied Materials Inc Method of manufacturing crystalline silicon solar cells using epitaxial deposition
US9240513B2 (en) 2010-05-14 2016-01-19 Solarcity Corporation Dynamic support system for quartz process chamber
US9441295B2 (en) 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
US8562745B2 (en) * 2010-05-21 2013-10-22 Silevo, Inc. Stable wafer-carrier system
WO2012025607A1 (de) * 2010-08-27 2012-03-01 Saint-Gobain Glass France Vorrichtung und verfahren zur wärmebehandlung mehrerer mehrschichtkörper
JP5757748B2 (ja) * 2011-02-16 2015-07-29 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
US20140060435A1 (en) * 2012-09-04 2014-03-06 Applied Materials, Inc. Doors for high volume, low cost system for epitaxial silicon deposition

Also Published As

Publication number Publication date
JP2015533195A (ja) 2015-11-19
CN104704624A (zh) 2015-06-10
US9406538B2 (en) 2016-08-02
US20140099778A1 (en) 2014-04-10
TWI592513B (zh) 2017-07-21
TW201418517A (zh) 2014-05-16
WO2014058612A1 (en) 2014-04-17
JP6285446B2 (ja) 2018-02-28
KR20150066582A (ko) 2015-06-16
KR101782874B1 (ko) 2017-09-28

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