TWI590731B - A metal wiring layer forming method, a metal wiring layer forming apparatus, and a storage medium - Google Patents
A metal wiring layer forming method, a metal wiring layer forming apparatus, and a storage medium Download PDFInfo
- Publication number
- TWI590731B TWI590731B TW103134892A TW103134892A TWI590731B TW I590731 B TWI590731 B TW I590731B TW 103134892 A TW103134892 A TW 103134892A TW 103134892 A TW103134892 A TW 103134892A TW I590731 B TWI590731 B TW I590731B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- concave portion
- metal wiring
- substrate
- catalyst
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 105
- 239000002184 metal Substances 0.000 title claims description 105
- 238000000034 method Methods 0.000 title claims description 65
- 239000010410 layer Substances 0.000 claims description 375
- 239000003054 catalyst Substances 0.000 claims description 135
- 239000000758 substrate Substances 0.000 claims description 116
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 76
- 229910052721 tungsten Inorganic materials 0.000 claims description 76
- 239000010937 tungsten Substances 0.000 claims description 76
- 239000007822 coupling agent Substances 0.000 claims description 33
- 238000007747 plating Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 16
- 238000010304 firing Methods 0.000 claims description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 11
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 238000004590 computer program Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 description 22
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 20
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 17
- 239000002105 nanoparticle Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000002168 alkylating agent Substances 0.000 description 3
- 229940100198 alkylating agent Drugs 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001432 tin ion Inorganic materials 0.000 description 3
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- 230000002152 alkylating effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002296 dynamic light scattering Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000012380 dealkylating agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 150000002941 palladium compounds Chemical class 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76864—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本發明,係關於對基板形成金屬配線層之金屬配線層形成方法、金屬配線層形成裝置及記憶媒體。
近年來,LSI等的半導體裝置,係對應於實裝面積之省空間化或改善處理速度這樣的課題,追求更進一步高密度化。作為實施高密度化之技術的一例,已知有藉由層積複數個配線基板而製作三次元LSI等之多層基板的多層配線技術。
在多層配線技術中,一般而言係為了確保配線基板間之導通,而在配線基板設置貫通配線基板並且填埋有銅(Cu)等之導電性材料的貫通導孔。
可是,在製作配線基板的情況下,雖使用Cu作為導電性材料,在基板之凹部填埋Cu,但在該情況下,必須在凹部內形成作為Cu擴散防止膜的阻障膜,而藉由無電解Cu電鍍在該阻障膜上形成種膜。因此,存在有配線層之配線容積下降,或在所填埋之Cu中產生孔隙
的情形。另一方面,開發一種藉由無電解電鍍法,在基板之凹部內填埋Ni系金屬以代替Cu,作為配線層而使用的技術。
然而,在基板之凹部內填埋Ni系金屬時,有在凹部外方形成Ni系金屬的情形,在該情況下,Ni系金屬中之形成於凹部外方的部分,係必須使用接下來的化學機械研磨方法來加以去除。
[專利文獻1]日本特開2010-185113號公報
本發明,係有鑑於考慮像這樣之觀點進行研究者,以提供一種可藉由鍍敷處理輕易且簡單地在基板的凹部內形成金屬配線層,且形成於凹部內的金屬配線層不會形成於凹部之外方的金屬配線層形成方法、金屬配線層形成裝置及記憶媒體為目的。
本發明,係一種對基板形成金屬配線層的金屬配線層形成方法,其特徵係,具備有:準備基板的工程,該基板,係具有包含絕緣層的凹部並且鎢層被形成於
凹部的底面;在凹部之絕緣層的表面不形成觸媒層,而在凹部之底面的鎢層上形成觸媒層的工程;及藉由鍍敷處理,在凹部內的觸媒層上,形成金屬配線層的工程。
本發明,係一種對基板形成金屬配線層的金屬配線層形成方法,其特徵係,具備有:準備基板的工程,該基板,係具有包含絕緣層的凹部並且鎢層被形成於凹部的底面;將矽烷化劑賦予至基板的凹部內,成為耦合劑不附著於凹部之絕緣層的表面,而耦合劑附著於底面之鎢層之狀態的工程;將耦合劑賦予至基板的凹部內,在凹部之絕緣層的表面不形成密接層,而在凹部之底面的鎢層形成密接層的工程;在凹部之側面不形成觸媒層,而在凹部之底面的鎢層上形成觸媒層的工程;及藉由鍍敷處理,在凹部內的觸媒層上,形成金屬配線層的工程。
本發明,係一種對基板形成金屬線層的金屬配線層形成裝置,其特徵係,具備有:觸媒層形成部,對於具有包含絕緣層的凹部並且鎢層被形成於凹部之底面的基板,在凹部之絕緣層的表面不形成觸媒層,而在凹部之底面的鎢層上形成觸媒層;及金屬配線層形成部,藉由鍍敷處理,在凹部內的觸媒層上,形成金屬配線層。
本發明,係一種金屬配線層形成裝置,對基板形成金屬線層的金屬配線層形成裝置,其特徵係,具備有:矽烷化劑賦予部,對於具有包含底面與側面的凹部並且鎢層被形成於凹部之底面的基板,將矽烷化劑賦予至基板之凹部內,成為耦合劑不附著於凹部之絕緣層的表面,
而耦合劑附著於底面之鎢層的狀態;密接層形成部,將耦合劑賦予至基板之凹部內,在凹部之側面不形成密接層,而在凹部之底面的鎢層形成密接層;觸媒層形成部,在凹部之側面不形成觸媒層,而在凹部之底面的鎢層上形成觸媒層;及金屬配線層形成部,藉由鍍敷處理,在凹部內的觸媒層上,形成金屬配線層。
本發明,係一種記憶媒體,儲存了用於使金屬配線層形成方法執行於電腦的電腦程式,其特徵係,金屬配線層形成方法,係具備有:準備基板的工程,該基板係具有包含底面與側面的凹部並且鎢層被形成於凹部的底面;在凹部之側面不形成觸媒層,而在凹部之底面的鎢層上形成觸媒層的工程;及藉由鍍敷處理,在凹部內的觸媒層上,形成金屬配線層的工程。
本發明,係一種記憶媒體,儲存了用於使金屬配線層形成方法執行於電腦的電腦程式,其特徵係,金屬配線層形成方法,係具備有:準備基板的工程,該基板,係具有包含底面與側面的凹部並且鎢層被形成於凹部的底面;將矽烷化劑賦予至基板的凹部內,成為耦合劑不附著於凹部之側面,而耦合劑附著於底面之鎢層之狀態的工程;將耦合劑賦予至基板的凹部內,在凹部之側面不形成密接層,而在凹部之底面的鎢層形成密接層的工程;在凹部之側面不形成觸媒層,而在凹部之底面的鎢層上形成觸媒層的工程;及藉由鍍敷處理,在凹部內的觸媒層上,形成金屬配線層的工程。
根據本發明,可輕易且簡單地在基板的凹部內形成金屬配線層,且所形成的金屬配線層不會形成於凹部外方。
2‧‧‧基板
3‧‧‧凹部
3a‧‧‧底面
3b‧‧‧表面
5‧‧‧觸媒層
7‧‧‧金屬配線層
10‧‧‧金屬配線層形成裝置
11‧‧‧氧化膜去除部
12‧‧‧觸媒層形成部
13‧‧‧觸媒層燒成部
14‧‧‧金屬配線層形成部
16‧‧‧矽烷化劑賦予部
17‧‧‧密接層形成部
20‧‧‧控制裝置
21‧‧‧記憶媒體
W‧‧‧鎢層
[圖1]圖1,係表示本發明之第1實施形態之金屬配線層形成方法的流程圖。
[圖2]圖2,係表示本發明之第1實施形態之金屬配線層形成方法的示意圖。
[圖3]圖3(a)~(e),係表示實施本發明之第1實施形態之金屬配線層形成方法之基板的圖。
[圖4]圖4,係表示本發明之第1實施形態之金屬配線層形成裝置的方塊圖。
[圖5]圖5,係表示本發明之第2實施形態之金屬配線層形成方法的流程圖。
[圖6]圖6,係表示本發明之第2實施形態之金屬配線層形成裝置的方塊圖。
[圖7]圖7,係表示作為比較例之金屬配線層形成方法的流程圖。
[圖8]圖8,係表示作為比較例之金屬配線層形成方法的示意圖。
以下,藉由圖1~圖4,說明關於本發明的第1實施形態。
本發明之金屬配線層形成方法,係如圖2(a)(b)(c)所示,對於由具有凹部3之半導體晶圓等所構成的矽基板(以下,亦稱為基板)2形成金屬配線層者。
如圖2(a)(b)(c)所示,在基板2中形成具有底面3a與側面3b的凹部3。
在該情況下,係具有:基板本體2a,由Si所構成;TEOS層2b,形成於基板本體2a上;SiN層2c,形成於TEOS層2b上;及TEOS層2d,形成於SiN層2c上。又,在TEOS層2b,係形成有貫通孔,在該貫通孔內填埋有鎢層W(參閱圖2(a))。
另外,上述之TEOS層2b、SiN層2c及TEOS層2d,係由絕緣層所形成。
由像這樣之構成所形成的基板2,係可藉由眾所皆知的方法來獲得。例如像這樣的基板2,係藉由圖3(a)~(e)所示的手法予以獲得。
首先,準備具有由Si所構成之基板本體2a的基板2(參閱圖3(a))。接下來,藉由CVD,在矽基板
2的基板本體2a上形成TEOS層2b,藉由蝕刻,在TEOS層2b形成貫通孔2e(參閱圖3(b))。
然後,如圖3(c)所示,藉由CVD,在TEOS層2b的貫通孔2e內填埋鎢層W。
接下來,如圖3(d)所示,藉由CVD,在TEOS層2b及鎢層W上,依序形成SiN層2c及TEOS層2d。
然後,藉由蝕刻去除鎢層W上的SiN層2c及TEOS層2d,而可獲得形成有凹部3的基板2,該凹部3,係包含具有底面3a的絕緣層(參閱圖3(e))。
在圖3(e)中,在基板2形成凹部3,在凹部3的底面形成鎢層W。
接下來,藉由圖4,說明關於對具有上述之凹部3的基板2形成金屬配線層的金屬配線層形成裝置10。
像這樣的金屬配線層形成裝置10,係具備有:氧化膜去除部11,去除基板2之凹部3之底面3a之鎢層W表面的氧化膜;觸媒層形成部12,設置於氧化膜去除部11的後段,在凹部3之絕緣層的表面3b不形成觸媒層5,而在凹部3之底面3a的鎢層W上形成觸媒層5(參閱圖2(a)(b)(c));及觸媒層燒成部13,設置於觸媒層形成部12的後段,燒成觸媒層5並凝固。又,在觸媒層燒成部13的後段設置有金屬配線層形成部14,該金屬配線層形成部14,係藉由鍍敷處理,在凹部3
內的觸媒層5上,形成金屬配線層7。
又,上述之金屬配線層形成裝置10的各構成構件,例如氧化膜去除部11、觸媒層形成部12、觸媒層燒成部13、金屬配線層形成部14,係皆按照設置於控制裝置20之記憶媒體21所記錄的各種程式,而藉由控制裝置20予以驅動控制,藉此,對基板2進行各種處理。在此,記憶媒體21,係儲存各種設定資訊或後述之金屬配線層形成程式等的各種程式。作為記憶媒體21,係可使用在電腦可讀取之ROM或RAM等之記憶體或硬碟、CD-ROM、DVD-ROM或軟碟片等之碟片狀記憶媒體等之眾所皆知的記憶裝置。
接下來,藉由圖1~圖3,說明由像這樣之構成所形成的本實施形態的作用。
如上述,在圖3(a)~(e)所示的前工程中,對由半導體晶圓等所構成的基板(矽基板)2形成凹部3,形成有凹部3的基板2,係被搬送至本發明之金屬配線層形成裝置10內。在該情況下,基板2,係具有由Si所構成的基板本體2a、TEOS層2b、SiN層2c、TEOS層2d,在基板2,係形成有包含絕緣層的凹部3,該凹部3係具有底面3a。
且,基板2之凹部3的底面3a,係形成有鎢層W(參閱圖2(a))。
在此,作為在基板2形成凹部3的方法,係可由以往眾所皆知的方法適當地加以採用。具體而言,例
如作為乾蝕刻技術,可適用使用了氟系或氯系氣體等之通用的技術,特別是在形成深寬比(孔的深度/孔徑)之較大的孔時,更可適合地採用可進行高速之深蝕刻之ICP-RIE(Inductively Coupled Plasma Reactive Ion Etching:感應耦合電漿-反應性離子蝕刻)的技術,特別是,可適合地採用被稱為博希法(bosch process)的方法,該博希法,係反覆進行使用了六氟化硫(SF6)的蝕刻步驟與使用了C4F8等之鐵氟龍(註冊商標)系氣體的保護步驟。
接下來,在金屬配線層形成裝置10內,如圖1所示,具有凹部3的基板2被遞送至氧化膜去除部11,在該氧化膜去除部11中,藉由使用了DHF溶液的洗淨處理來去除形成於凹部3之底面3a之鎢層W表面的氧化膜。
接下來,基板2,係被遞送至觸媒層形成部12,在該觸媒層形成部12中,於凹部3之絕緣層的表面3b不形成觸媒層5,而僅在形成於凹部3之底面3a的鎢層W表面形成觸媒層5(參閱圖2(b))。
如上述,在設置於觸媒層形成部12之前段的氧化膜去除部11中,係藉由使用了DHF溶液的洗淨處理來去除形成於基板2之凹部3之底面3a之鎢層W表面的氧化膜。在該情況下,對於從氧化膜去除部11遞送至觸媒層形成部12的基板2,並未進行將耦合劑使用於凹部3及其周緣的密接層形成工程。另一方面,在氧化膜去除部11中,係去除形成於凹部3之底面3a之鎢層W上的氧化
膜。
如上述,由於凹部3之絕緣層的表面3b,係主要藉由由SiN層2c及TEOS層2d的絕緣層所形成,故只要未形成密接層,則在觸媒層形成部12中,觸媒層5不會形成於凹部3之絕緣層的表面3b。因此,在觸媒層形成部12中,觸媒層僅形成於從表面去除了氧化膜的鎢層W上。
接下來,進一步敍述關於觸媒層形成部12中之觸媒形成工程。
如圖2(b)所示,在觸媒形成工程中,係例如可採用藉由噴嘴對基板2吹噴氯化鈀水溶液,使成為觸媒的Pd離子吸附於基板2之表面的處理。具體而言,對基板2吹噴氯化錫溶液,使錫離子吸附於基板2,接下來,對基板2吹噴氯化鈀水溶液,以Pd離子置換錫離子而使Pd離子吸附,且對基板2吹噴氫氧化鈉予以去除剩餘的錫離子。如此一來,可僅在形成於基板2之凹部3之底面3a的鎢層W上,設置觸媒層5。
或者在基板2之凹部3的鎢層W上形成觸媒層5的情況下,亦可使用具有可促進鍍敷反應之觸媒作用的觸媒,例如包含由奈米粒子所構成之觸媒的觸媒溶液。在此,奈米粒子,係指具有觸媒作用的粒子,平均粒徑為20nm以下,例如為0.5nm~20nm之範圍內的粒子。作為構成奈米粒子的元素,係例如可列舉出鈀、金、白金等。
又,作為構成奈米粒子的元素,係亦可使用
釕。
測定奈米粒子之平均粒徑的方法並不特別限定,可使用各種方法。例如,在測定觸媒溶液內之奈米粒子的平均粒徑時,可使用動態光散射法等。動態光散射法,係指對分散於觸媒溶液內的奈米粒子照射雷射光,藉由觀察其散亂光來計算奈米粒子之平均粒徑等的方法。又,在測定吸附於基板2之凹部3之奈米粒子的平均粒徑時,亦可由使用TEM或SEM等所取得的圖像來檢測預定個數的奈米粒子,例如20個奈米粒子,從而計算該些奈米粒子之粒徑的平均值。
其次,說明關於包含有由奈米粒子所構成之觸媒的觸媒溶液。觸媒溶液,係含有構成成為觸媒之奈米粒子之金屬的離子者。在例如奈米粒子是由鈀所構成的情況下,在觸媒溶液中,係以含有氯化鈀等的鈀化合物作為鈀離子源。
觸媒溶液之具體的組成並不特別限定,較佳的係觸媒溶液的黏性係數會降為0.01Pa.s以下來設定觸媒溶液的組成。藉由將觸媒溶液的黏性係數設成為上述範圍內,即使基板2之凹部3的直徑較小時,亦可使觸媒溶液充分地滲透至基板2之凹部3的底面3a。藉此,可使觸媒更確實地吸附至基板2之凹部3的底面3a。
較佳的係,觸媒溶液中的觸媒會被分散劑被覆。藉此,可縮小觸媒之界面中的界面能量。因此,可更促進觸媒溶液內之觸媒的擴散,藉此,可使觸媒以更短時
間到達基板2之凹部3的底面3a。又,可防止複數個觸媒凝集而其粒徑變大,亦可藉此更促進觸媒溶液內之觸媒的擴散。
準備被分散劑被覆之觸媒的方法並不特別限定。例如,亦可使用包含事先被分散劑被覆之觸媒的觸媒溶液。
作為分散劑,具體而言,係聚乙烯吡咯烷酮(PVP)、聚丙烯酸(PAA)、聚乙烯亞胺(PEI)、四甲基銨(TMA)、檸檬酸等為較佳。
其他,用以調整特性的各種藥劑,係亦可被添加於觸媒溶液。
如此一來,在觸媒層形成部12中,觸媒層5係僅形成於凹部3之底面3a所形成的鎢層W表面。
如此一來,在鎢層W表面形成有觸媒層5的基板2會被遞送至觸媒層燒成部13,在該觸媒層燒成部13內加熱基板2。如此一來,燒成形成於凹部3之底面3a的鎢層W表面的觸媒層5並凝固。
在藉由金屬奈米粒子形成觸媒層5時,可藉由燒成觸媒層5的方式,更有效果地使觸媒層5凝固。
接下來,基板2,係從觸媒層燒成部13被遞送至金屬配線層形成部14。且,在該金屬配線層形成部14中,對基板2的凹部3內供給例如無電解NiB鍍敷液而施予鍍敷處理,如此一來,在鎢層W上的觸媒層5上形成由無電解NiB鍍敷層所構成的金屬配線層7。
在本實施形態中,作為形成於觸媒層5上的金屬配線層7,係可以考慮由Ni、NiB、NiP、Co、CoB、CoP等所構成的金屬配線層7。
如上述,根據本實施形態,由於僅在設置於基板2之凹部3之底面3a的鎢層W表面形成觸媒層5,並且在凹部3之絕緣層的表面3b未形成觸媒層5,因此,可僅在凹部3內設置金屬配線層7。在該情況下,金屬配線層7不會形成於凹部3的外方,因此,不需藉由化學機械研磨去除形成於凹部3之外方的金屬配線層7。
接下來,藉由圖7及圖8,敍述關於作為比較例的金屬配線層形成方法。
在圖7及圖8所示的比較例中,首先,準備具有凹部3的基板2,該凹部3係包含底面3a(參閱圖8(a))。在該情況下,在凹部3的底面3a,係設置有鎢層W。
接下來,對基板2施予包含有電漿處理的氫氧化處理,而凹部3的底面3a、絕緣層的表面3b被氫氧化。
接下來,將矽烷耦合劑賦予至基板2之凹部3的底面3a(鎢層W)及絕緣層的表面3b,而在凹部3的底面3a、絕緣層的表面3b形成密接層,然後,在密接層上形成由Pd所構成的觸媒層(參閱圖8(b))。在圖8(b)中,係以符號8來表示基板2上的密接層及觸媒層。
然後,如圖8(c)所示,對基板2施予鍍敷處理,在凹部3內形成由例如無電解NiB鍍敷層所構成的金屬配線層7。在圖8(c)所示的比較例中,由於在基板2之凹部3的底部3a、絕緣層的表面3b亦形成有密接層及觸媒層8,故金屬配線層7會形成於凹部3的外方。
因此,在圖8(c)中,金屬配線層7中之形成於基板2之凹部3之外方的部分,係必需藉由化學機械研磨來去除。
對此,根據本實施形態,由於僅在設置於基板2之凹部3之底面的鎢層W表面設置觸媒層5,故可使形成於觸媒層5上的金屬配線層7停止於凹部3內。因此,在凹部3內形成金屬配線層7之後,可省略藉由化學機械研磨來去除形成於凹部3之外方之金屬配線層7的工程。
因此,可達成金屬配線層形成工程之簡單化及效率化。
接下來,藉由圖5及圖6,說明關於本發明的第2實施形態。
圖5及圖6所示之第2實施形態的金屬配線層形成裝置10,係在去除鎢層W表面之氧化膜的氧化膜去除部11與形成觸媒層12的觸媒層形成部12之間,設置矽烷化劑賦予部16與密接層形成部17者,而其他構成
係與圖1~圖4所示的第1實施形態大致相同。
在圖5及圖6所示的第2實施形態中,對與圖1~圖4所示之第1實施形態相同的部份賦予相同符號而省略詳細之說明。
在圖5及圖6示的第2實施形態中,矽烷化劑賦予部16,係將矽烷化劑賦予至基板2的凹部3內,成為後述之耦合劑不會附著於凹部3之絕緣層的表面3b,而耦合劑僅附著於底面3a之鎢層W表面的狀態者。又,密接層形成部17,係將耦合劑賦予至基板2的凹部3內,在凹部3之絕緣層的表面3b不形成密接層,而僅在底面3a的鎢層W形成密接層者。
接下來,說明關於由像這樣的構成所形成之本實施形態的作用。在金屬配線層形成裝置10內,如圖5所示,具有凹部3的基板2(參閱圖2(a))被遞送至氧化膜去除部11,在該氧化膜去除部11中,藉由使用了DHF溶液的洗淨處理來去除形成於凹部3之底面3a之鎢層W表面的氧化膜。同時,由凹部3之絕緣層所構成的表面3b會被氫氧化。
接下來,基板2,係被遞送至矽烷化劑賦予部16,在該矽烷化劑賦予部16中,對基板2賦予矽烷化劑。作為像這樣的矽烷化劑,係考慮TMSDMA等。
如此一來,藉由對基板2賦予矽烷化劑的方式,可在凹部3之絕緣層的表面3b去除羥基,而將絕緣層的表面3b設成為未附著有矽烷耦合劑的狀態。
此時,在形成於凹部3之底面3a的鎢層W上係殘留有羥基,該鎢層W上係維持附著有矽烷耦合劑的狀態。
接下來,基板2,係被遞送至密接層形成部17,在該密接層形成部17中,對基板2賦予矽烷耦合劑等的耦合劑。此時,由於凹部3之絕緣層的表面3b其羥基被去除,故成為難以附著矽烷耦合劑的狀態。另一方面,由於形成於凹部3之底面3a的鎢層W係維持附著有矽烷耦合劑的狀態,故矽烷耦合劑係僅附著於凹部3之底面3a所形成的鎢層W上。
另外,在矽烷化劑賦予部16中,亦可在將賦予了矽烷化劑的基板2遞送至密接層形成部17之前,將基板2加熱而對鎢層W施予加熱處理。在該情況下,係在密接層形成部17中,可將矽烷耦合劑確實地賦予至鎢層W上。
接下來,進一步說明密接層形成部17中的作用。
密接層形成部17,係具有真空室(未圖示),該真空室係具有加熱部,在該密接層形成部17內,矽烷耦合劑等的耦合劑係被吸附於具有凹部3的基板2上,如此一來,在形成於凹部3中之底面3a的鎢層W上形成密接層(SAM處理)。使矽烷耦合劑吸附而形成的密接層,係提高與後述之觸媒層5之密接性者。
在密接層形成部17中,形成有密接層的基板
2,係被遞送至觸媒層形成部12。且,在該觸媒層形成部12中,例如成為觸媒的Pd離子被吸附至基板2的密接層上,而形成觸媒層5(參閱圖2(b))。
在該情況下,由於基板2之密接層係僅設置於凹部3之底面3a所形成的鎢層W上,故觸媒層5亦僅形成於凹部3之底面3a所形成的鎢層W上,而觸媒層5不會形成於凹部3之絕緣層的表面3b。
如此一來,在觸媒層形成部12中,觸媒層5係僅形成於凹部3之底面3a所形成的鎢層W表面。
如此一來,在鎢層W表面形成有觸媒層5的基板2會被遞送至觸媒層燒成部13,在該觸媒層燒成部13內加熱基板2。如此一來,燒成形成於凹部3之底面3a的鎢層W表面的觸媒層5並凝固。
在藉由金屬奈米粒子形成觸媒層5時,可藉由燒成觸媒層5的方式,更有效果地使觸媒層5凝固。
接下來,基板2,係從觸媒層燒成部13被遞送至金屬配線層形成部14。且,在該金屬配線層形成部14中,對基板2的凹部3內供給例如無電解NiB鍍敷液而施予鍍敷處理,如此一來,在鎢層W上的觸媒層5上形成由無電解NiB鍍敷層所構成的金屬配線層7。
在本實施形態中,作為形成於觸媒層5上的金屬配線層7,係可以考慮由Ni、NiB、NiP、Co、CoB、CoP等所構成的金屬配線層7。
如上述,根據本實施形態,由於僅在設置於
基板2之凹部3之底面3a的鎢層W表面形成觸媒層5,並且在凹部3之絕緣層的表面3b未形成觸媒層5,因此,可僅在凹部3內設置金屬配線層7。在該情況下,金屬配線層7不會形成於凹部3的外方,因此,不需藉由化學機械研磨去除形成於凹部3之外方的金屬配線層7。
2‧‧‧基板
2a‧‧‧基板本體
2b‧‧‧TEOS層
2c‧‧‧SiN層
2d‧‧‧TEOS層
3‧‧‧凹部
3a‧‧‧底面
3b‧‧‧表面
5‧‧‧觸媒層
7‧‧‧金屬配線層
W‧‧‧鎢層
Claims (8)
- 一種金屬配線層形成方法,對基板形成金屬配線層,其特徵係,具備有:準備基板的工程,該基板係具有包含絕緣層的凹部並且鎢層被形成於凹部的底面;將矽烷化劑賦予至基板的凹部內,成為耦合劑不附著於凹部之絕緣層的表面,而耦合劑附著於底面之鎢層之狀態的工程;將耦合劑賦予至基板的凹部內,在凹部之絕緣層的表面不形成密接層,而在凹部之底面的鎢層形成密接層的工程;在凹部之側面不形成觸媒層,而在凹部之底面的鎢層上形成觸媒層的工程;及藉由鍍敷處理,在凹部內的觸媒層上,形成金屬配線層的工程。
- 如申請專利範圍第1項之金屬配線層形成方法,其中,在將矽烷化劑賦予至基板的凹部內之前,去除鎢層表面的氧化膜。
- 如申請專利範圍第1或2項之金屬配線層形成方法,其中,在凹部之底面的鎢層上形成觸媒層之後,燒成觸媒層而凝固。
- 如申請專利範圍第1或2項之金屬配線層形成方 法,其中,觸媒層係由鈀系觸媒層所構成,金屬配線層係由Ni系配線層所構成。
- 一種金屬配線層形成裝置,對基板形成金屬線層,其特徵係,具備有:矽烷化劑賦予部,對具有包含底面與側面的凹部並且鎢層被形成於凹部之底面形成的基板,將矽烷化劑賦予至基板的凹部內,成為耦合劑不附著於凹部之絕緣層的表面,而耦合劑附著於底面之鎢層的狀態;密接層形成部,將耦合劑賦予至基板的凹部內,在凹部之側面不形成密接層,而在凹部之底面的鎢層形成密接層;觸媒層形成部,在凹部之側面不形成觸媒層,而在凹部之底面的鎢層上形成觸媒層;及金屬配線層形成部,藉由鍍敷處理,在凹部內的觸媒層上,形成金屬配線層。
- 如申請專利範圍第5項之金屬配線層形成裝置,其中,在矽烷化劑賦予部之前段,設置有去除鎢層表面之氧化膜的氧化膜去除部。
- 如申請專利範圍第5或6項之金屬配線層形成裝置,其中,在觸媒層形成部與金屬配線層形成部之間,設置有燒成觸媒層而凝固的觸媒層燒成部。
- 一種記憶媒體,儲存了用於使金屬配線層形成方法執行於電腦的電腦程式,其特徵係,金屬配線層形成方法,係具備有:準備基板的工程,該基板係具有包含底面與側面的凹部並且鎢層被形成於凹部的底面;將矽烷化劑賦予至基板的凹部內,成為耦合劑不附著於凹部的側面,而耦合劑附著於底面之鎢層之狀態的工程;將耦合劑賦予至基板的凹部內,在凹部的側面不形成密接層,而在凹部之底面的鎢層形成密接層的工程;在凹部之側面不形成觸媒層,而在凹部之底面的鎢層上形成觸媒層的工程;及藉由鍍敷處理,在凹部內的觸媒層上,形成金屬配線層的工程。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013216745A JP6054279B2 (ja) | 2013-10-17 | 2013-10-17 | 金属配線層形成方法、金属配線層形成装置および記憶媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201531191A TW201531191A (zh) | 2015-08-01 |
TWI590731B true TWI590731B (zh) | 2017-07-01 |
Family
ID=52828121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103134892A TWI590731B (zh) | 2013-10-17 | 2014-10-07 | A metal wiring layer forming method, a metal wiring layer forming apparatus, and a storage medium |
Country Status (5)
Country | Link |
---|---|
US (1) | US9653354B2 (zh) |
JP (1) | JP6054279B2 (zh) |
KR (1) | KR102297316B1 (zh) |
TW (1) | TWI590731B (zh) |
WO (1) | WO2015056678A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9875984B2 (en) * | 2014-12-05 | 2018-01-23 | National Tsing Hua University | Substrate surface metallization method and substrate having metallized surface manufactured by the same |
JP6552931B2 (ja) * | 2015-09-18 | 2019-07-31 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US10755973B2 (en) * | 2016-10-17 | 2020-08-25 | Tokyo Electron Limited | Metal wiring layer forming method, metal wiring layer forming apparatus and recording medium |
US11028483B2 (en) | 2016-10-27 | 2021-06-08 | Tokyo Electron Limited | Plating method, plating apparatus and recording medium |
JP2018073949A (ja) * | 2016-10-27 | 2018-05-10 | 東京エレクトロン株式会社 | 金属配線層形成方法、金属配線層形成装置および記憶媒体 |
CN109285952B (zh) * | 2017-07-20 | 2024-04-12 | 松下知识产权经营株式会社 | 光吸收材料以及使用了该光吸收材料的太阳能电池 |
TWI672175B (zh) * | 2017-10-20 | 2019-09-21 | 國立清華大學 | 自吸附觸媒組成物、自吸附觸媒組成物的製造方法以及無電鍍基板的製造方法 |
CN111630654A (zh) * | 2018-02-01 | 2020-09-04 | 东京毅力科创株式会社 | 多层配线的形成方法和存储介质 |
TWI833730B (zh) * | 2018-02-21 | 2024-03-01 | 日商東京威力科創股份有限公司 | 多層配線之形成方法及記憶媒體 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63104350A (ja) * | 1986-10-21 | 1988-05-09 | Nec Corp | 半導体装置及びその製造方法 |
JP3332668B2 (ja) * | 1994-07-14 | 2002-10-07 | 松下電器産業株式会社 | 半導体装置の配線形成に用いる無電解めっき浴及び半導体装置の配線形成方法 |
JP3542326B2 (ja) | 2000-09-26 | 2004-07-14 | 株式会社半導体理工学研究センター | 多層配線構造の製造方法 |
JP2004193298A (ja) | 2002-12-11 | 2004-07-08 | Sony Corp | 半導体装置の製造方法 |
JP2008053568A (ja) * | 2006-08-25 | 2008-03-06 | Nec Electronics Corp | 半導体装置および半導体装置の製造方法 |
JP4708465B2 (ja) * | 2008-10-21 | 2011-06-22 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び半導体装置の製造装置 |
JP5486821B2 (ja) | 2009-02-12 | 2014-05-07 | 学校法人 関西大学 | 無電解銅めっき方法、及び埋め込み配線の形成方法 |
JP5395542B2 (ja) | 2009-07-13 | 2014-01-22 | 株式会社東芝 | 半導体装置 |
JP2011151216A (ja) * | 2010-01-21 | 2011-08-04 | Renesas Electronics Corp | 半導体装置の製造方法 |
-
2013
- 2013-10-17 JP JP2013216745A patent/JP6054279B2/ja active Active
-
2014
- 2014-10-07 TW TW103134892A patent/TWI590731B/zh active
- 2014-10-14 WO PCT/JP2014/077355 patent/WO2015056678A1/ja active Application Filing
- 2014-10-14 US US15/029,655 patent/US9653354B2/en active Active
- 2014-10-14 KR KR1020167009846A patent/KR102297316B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TW201531191A (zh) | 2015-08-01 |
US9653354B2 (en) | 2017-05-16 |
KR20160070078A (ko) | 2016-06-17 |
JP6054279B2 (ja) | 2016-12-27 |
KR102297316B1 (ko) | 2021-09-02 |
WO2015056678A1 (ja) | 2015-04-23 |
JP2015079885A (ja) | 2015-04-23 |
US20160240436A1 (en) | 2016-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI590731B (zh) | A metal wiring layer forming method, a metal wiring layer forming apparatus, and a storage medium | |
TWI532878B (zh) | Catalyst adsorption treatment method and adsorption treatment device | |
TWI669414B (zh) | 半導體裝置、鍍敷處理方法、鍍敷處理系統及記憶媒體 | |
TW201702427A (zh) | 觸媒層形成方法、觸媒層形成系統及記憶媒體 | |
JP2015161020A (ja) | めっきの前処理方法、記憶媒体およびめっき処理システム | |
TWI659125B (zh) | 鍍敷前處理方法、鍍敷處理系統及記憶媒體 | |
TWI614371B (zh) | 觸媒層形成方法、觸媒層形成系統及記憶媒體 | |
TWI745443B (zh) | 金屬配線層形成方法、金屬配線層形成裝置及記憶媒體 | |
TWI679301B (zh) | 緊密層形成方法、緊密層形成系統及記憶媒體 | |
KR102560933B1 (ko) | 배선층 형성 방법, 배선층 형성 시스템 및 기억 매체 | |
JP2018073949A (ja) | 金属配線層形成方法、金属配線層形成装置および記憶媒体 |