TWI583536B - 接合高分子薄膜與高分子薄膜之方法、接合高分子薄膜與無機材料基板之方法、高分子薄膜積層體及高分子薄膜與無機材料基板之積層體 - Google Patents

接合高分子薄膜與高分子薄膜之方法、接合高分子薄膜與無機材料基板之方法、高分子薄膜積層體及高分子薄膜與無機材料基板之積層體 Download PDF

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TWI583536B
TWI583536B TW102112609A TW102112609A TWI583536B TW I583536 B TWI583536 B TW I583536B TW 102112609 A TW102112609 A TW 102112609A TW 102112609 A TW102112609 A TW 102112609A TW I583536 B TWI583536 B TW I583536B
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Taiwan
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polymer film
inorganic material
material layer
bonding
activation treatment
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TW102112609A
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TW201404578A (zh
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松本好家
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須賀唯知
Ｌａｎｔｅｃｈｎｉｃａｌ服務股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/1429—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface
    • B29C65/1432—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface direct heating of the surfaces to be joined
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/1429—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface
    • B29C65/1454—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface scanning at least one of the parts to be joined
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/1429—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface
    • B29C65/1464—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface making use of several radiators
    • B29C65/1467—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface making use of several radiators at the same time, i.e. simultaneous welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/02—Preparation of the material, in the area to be joined, prior to joining or welding
    • B29C66/028—Non-mechanical surface pre-treatments, i.e. by flame treatment, electric discharge treatment, plasma treatment, wave energy or particle radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
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    • B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
    • B29C66/112—Single lapped joints
    • B29C66/1122—Single lap to lap joints, i.e. overlap joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/40—General aspects of joining substantially flat articles, e.g. plates, sheets or web-like materials; Making flat seams in tubular or hollow articles; Joining single elements to substantially flat surfaces
    • B29C66/41—Joining substantially flat articles ; Making flat seams in tubular or hollow articles
    • B29C66/45—Joining of substantially the whole surface of the articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/72—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the structure of the material of the parts to be joined
    • B29C66/723—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the structure of the material of the parts to be joined being multi-layered
    • B29C66/7232—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the structure of the material of the parts to be joined being multi-layered comprising a non-plastics layer
    • B29C66/72321—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the structure of the material of the parts to be joined being multi-layered comprising a non-plastics layer consisting of metals or their alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/72—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the structure of the material of the parts to be joined
    • B29C66/723—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the structure of the material of the parts to be joined being multi-layered
    • B29C66/7232—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the structure of the material of the parts to be joined being multi-layered comprising a non-plastics layer
    • B29C66/72324—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the structure of the material of the parts to be joined being multi-layered comprising a non-plastics layer consisting of inorganic materials not provided for in B29C66/72321 - B29C66/72322
    • B29C66/72325—Ceramics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/73—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset
    • B29C66/737—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the state of the material of the parts to be joined
    • B29C66/7373—Joining soiled or oxidised materials
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    • B29C66/82—Pressure application arrangements, e.g. transmission or actuating mechanisms for joining tools or clamps
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B29C66/834—General aspects of machine operations or constructions and parts thereof characterised by the movement of the joining or pressing tools moving with the parts to be joined
    • B29C66/8341—Roller, cylinder or drum types; Band or belt types; Ball types
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    • B29C66/83413—Roller, cylinder or drum types cooperating rollers, cylinders or drums
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/09—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyesters
    • B—PERFORMING OPERATIONS; TRANSPORTING
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Description

接合高分子薄膜與高分子薄膜之方法、接合高分子薄膜與無機材料基板之方法、高分子薄膜積層體及高分子薄膜與無機材料基板之積層體
本發明關於一種不使用有機系接著劑來接合高分子薄膜的技術。
在電機領域中，薄型大面積的電子裝置之開發正在進行。例如在使用有機EL元件的平面顯示器中，有機EL元件一般採用配置成夾在兩片玻璃等的無機材料基板之間的構造。此情況下，在這兩片基板的外周部使用所謂玻料(frit)來緊密接合，有機EL元件被密封而與外部環境隔離，受到保護而不會接觸到造成不良影響的氧或水分等。
近年來，薄型大面積的電子裝置進一步要求可撓化。為了因應這項要求，而提倡裝置的基板採用聚萘二甲酸乙二酯(PEN)或聚對苯二甲酸乙二酯(PET)等的高分子薄膜作為基板。
但是為了將上述玻料接合，必須進行雷射照 射，因此不適合用於熔點低的高分子薄膜的密封材料。再者，玻料缺乏彈性，而不適合用於可撓顯示器等的電子機器。
另一方面，為了在低溫下將高分子薄膜接合並且積層，有文獻開發出使用有機系接著劑的技術(專利文獻1)。但是難以使所塗布的有機系接著劑配合電子裝置實裝而微細圖案化，因此對於接合界面構造日益微細化的電子裝置實裝，利用有機系接著劑的接合方法並不適合。再者，在真空等的特殊環境下，隨著時間經過，有機溶劑會自最終製品的接著劑層蒸發而逐漸脫離，因此會有造成接合部分機械強度降低的情形。
另外，不僅高分子薄膜彼此的接合，例如高分子薄膜接合在玻璃基板而成的智慧型手機等的觸控面板，接著劑也是採用有機材料。但是，面板愈大型化，有機系接著劑產生氣泡等缺陷的機率愈上升，產率降低，因此變成最終成本提高的因素。
[先前技術文獻] [專利文獻]
[專利文獻1]日本特開2008-150550
為了解決上述課題，本發明目的為提供一種不使用有機系接著劑，在低溫下以低成本使高分子薄膜堅固地接合在其他高分子薄膜或無機材料基板之方法。
為了解決上述技術課題，本發明所關連的將多個高分子薄膜接合之方法，係包括：在一部分或全部的第一高分子薄膜上形成第一無機材料層之步驟；在一部分或全部的第二高分子薄膜上形成第二無機材料層之步驟；藉由使具有既定動能的粒子衝撞第一無機材料層的表面來進行表面活性化處理之步驟；藉由使具有既定動能的粒子衝撞第二無機材料層的表面來進行表面活性化處理之步驟；及使表面活性化處理後的第一無機材料層的表面接觸表面活性化處理後的第二無機材料層的表面，接合第一高分子薄膜與第二高分子薄膜之步驟。依據本發明，可對具有微細圖案的接合部以至於大面積的接合部的各種形狀的接合部，不使用有機系接著劑，在低溫下以低成本且堅固地接合高分子薄膜。
本發明所關連的接合方法，其中形成於第一高分子薄膜上的第一無機材料層與形成於第二高分子薄膜上的第二無機材料層，係分別使用濺鍍法所形成。藉此可形成對於高分子薄膜接著力強的無機材料層。
本發明所關連的接合方法，其中第一高分子薄膜與第二高分子薄膜，係以選自聚醯亞胺樹脂、或聚萘二甲酸乙二酯(PEN)、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)及聚三亞甲基對苯二甲酸酯(PTT)所構成之群組中的聚酯樹脂為主成分而形成。藉此可將本發明適用於可撓且泛用性高的應用範圍。
本發明所關連的接合方法，其中第一高分子 薄膜與第二高分子薄膜，係由相異的材料所形成。藉此可實現各種高分子薄膜之積層構造。
本發明所關連的接合方法，其中第一無機材料層與第二無機材料層，係以選自銅(Cu)、鋁(Al)及鐵(Fe)所構成之群組中的金屬或該等的合金為主成分而形成。藉由將金屬使用在無機材料層，可提供接著強度高、柔軟性高的高分子材料之積層體。
本發明所關連的接合方法，其中第一無機材料層與第二無機材料層，係以矽(Si)為主成分而形成。藉此，藉由使用半導體步驟常用的材料，可輕易調節表面處理之處理。
本發明所關連的接合方法，其中第一無機材料層與第二無機材料層，係以矽(Si)為主成分而形成，並含有鐵。藉此可提供能夠堅固地結合，且在一般的半導體零件製造步驟可輕易使用的高分子薄膜之積層體。
本發明所關連的接合方法，其中第一無機材料層與第二無機材料層，係由多種材料的層所構成。藉此可形成與高分子薄膜的接合強度高，並且與其他無機材料層的接合強度高的無機材料層。
本發明所關連的接合方法中，表面活性化處理是藉由使具有0.1keV至2keV的動能的氬(Ar)粒子衝撞第一無機材料層及第二無機材料層的表面來進行。藉此可提供接合強度高的高分子薄膜之積層體。
本發明所關連的接合方法，其中進一步包括：在第一無機材料層形成之前，在第一高分子薄膜的熔 點以下或熱分解溫度以下的溫度將第一高分子薄膜加熱之步驟；及在第二無機材料層形成之前，在第二高分子薄膜的熔點以下或熱分解溫度以下的溫度將第二高分子薄膜加熱之步驟。藉此，可降低高分子薄膜所含有的水量，提高接合製程中的真空度，可縮短製程全體所需要的時間，同時可促進表面活性化處理中的表面活性化。
本發明所關連的接合方法，在使表面活性化 處理後的第一無機材料層的表面接觸表面活性化處理後的第二無機材料層的表面時，對第一高分子薄膜與第二高分子薄膜的接合界面朝垂直的方向施加5MPa以上的壓力。藉此可增加表面活性化後的無機材料層彼此的實際接觸面積，提高接合強度。
本發明所關連的接合高分子薄膜之方法包括 ：由第一供給輥供給帶狀第一高分子薄膜之步驟；由第二供給輥供給帶狀第二高分子薄膜之步驟；在一部分或全部的由第一供給輥提供的第一高分子薄膜上形成第一無機材料層之步驟；在一部分或全部的由第二供給輥提供的第二高分子薄膜上形成第二無機材料層之步驟；藉由使具有既定動能的粒子衝撞第一無機材料層的表面來進行表面活性化處理之步驟；藉由使具有既定動能的粒子衝撞第二無機材料層的表面來進行表面活性化處理之步驟；使用接合輥，使表面活性化處理後的第一無機材料層的表面接觸表面活性化處理後的第二無機材料層的表面，而接合第一高分子薄膜與第二高分子薄膜之步驟；及將藉由第一高分子薄膜與第二高分子薄膜的接合所 形成的積層高分子薄膜纏繞於纏繞輥之步驟。藉此能夠有效率且不使用有機系接著劑而製造出高分子薄膜之積層體。
本發明所關連的將高分子薄膜接合至無機材 料基板之方法，包括：在一部分或全部的高分子薄膜上形成第一無機材料層之步驟；在一部分或全部的無機材料基板上形成第二無機材料層之步驟；藉由使具有既定動能的粒子衝撞第一無機材料層的表面來進行表面活性化處理之步驟；藉由使具有既定動能的粒子衝撞第二無機材料層的表面來進行表面活性化處理之步驟；使表面活性化處理後的第一無機材料層的表面接觸表面活性化處理後的第二無機材料層的表面，而接合高分子薄膜與無機材料基板之步驟。依據本發明，可不使用有機系接著劑，在低溫下將高分子薄膜堅固地接合在無機材料基板。
本發明所關連的高分子薄膜積層體具有：第 一高分子薄膜、第二高分子薄膜、及配置於第一高分子薄膜與第二高分子薄膜之間的一部分或全部，接著第一高分子薄膜與第二高分子薄膜的無機材料層。藉此，可不使用有機系接著材料，在廣泛的應用範圍提供具有高拉伸強度的高分子薄膜的積層體。
本發明所關連的高分子薄膜積層體，其中第 一高分子薄膜與第二高分子薄膜，係以聚醯亞胺樹脂或聚酯樹脂為主成分而形成。藉此，可將本發明適用於使用聚醯亞胺樹脂系高分子薄膜或聚酯樹脂系高分子薄膜 等範圍廣泛的可撓性材料的應用範圍。
本發明所關連的高分子薄膜積層體，其中第 一無機材料層與第二無機材料層係以選自銅(Cu)、鋁(Al)及鐵(Fe)所構成之群組中的金屬或該等的合金為主成分而形成。以這種方式，藉由將金屬使用於無機材料層，可提供接著強度高、柔軟性高的高分子材料之積層體。
本發明所關連的高分子薄膜積層體，其中第 一無機材料層與第二無機材料層，係以矽(Si)為主成分而形成。藉此，藉由使用半導體步驟常用的材料，可輕易調節表面處理之處理。
本發明所關連的高分子薄膜積層體，其中第 一無機材料層與第二無機材料層係以矽(Si)為主成分而形成，並含有鐵。藉此，可提供能夠堅固地結合且在一般的半導體零件製造步驟可輕易使用的高分子薄膜之積層體。
本發明所關連的高分子薄膜積層體，其中第 一無機材料層與第二無機材料層，係由多種材料的層所構成。藉此可形成與高分子薄膜的接合強度高，並且與其他無機材料層的接合強度高的無機材料層。
本發明所關連的高分子薄膜積層體，係具有：高分子薄膜、無機材料基板、及配置在高分子薄膜與無機材料基板之間的一部分或全部，並將高分子薄膜與無機材料基板接著的無機材料之接著層。藉此，可不含有機系接著材料，在廣泛的應用範圍提供具有高拉伸強度的高分子薄膜與無機材料基板之積層體。
依據本發明，可不使用有機系接著劑，在低溫下將高分子薄膜堅固地接合。另外，由於不使用有機系接著劑，因此可使用於形成具有微細圖案的區域以至於大面積的各種形狀接合界面的用途。另外，由於不經過高溫加熱步驟，因此能夠以低成本提供不會失去高分子薄膜原本的特性的積層體。進一步而言，由於不使用有機系接著劑，因此可提供即使在真空中等的特殊空間，接合強度也不會降低的高分子薄膜。
1‧‧‧接合裝置
2‧‧‧真空室
3、31、32‧‧‧濺鍍靶
4、41、42、43、44‧‧‧粒子束源
4A‧‧‧粒子束源的轉軸
4B‧‧‧粒子束放射口
5‧‧‧粒子束
6‧‧‧支撐體
6A‧‧‧支撐體的轉軸
7‧‧‧無機材料的原子或團簇
51‧‧‧接合區域
52‧‧‧未接合區域
F1、F2‧‧‧高分子薄膜
I1、I2‧‧‧無機材料層
A1、A2‧‧‧無機材料層的表面
R1、R2‧‧‧供給輥
R3‧‧‧接合輥
R4‧‧‧纏繞輥
第1圖係表示第一實施形態所關連的接合方法之流程圖。
第2圖係概略表示進行第一實施形態所關連的接合方法之裝置構成之圖。
第3圖係表示第一實施形態所關連的接合方法之各步驟之概略剖面圖。
第4圖係表示線型高速原子束源之立體圖。
第5圖係表示接合區域之立體圖。
第6圖係表示接合區域之立體圖。
第7圖係表示接合區域之立體圖。
第8圖係表示接合區域之立體圖。
第9圖係概略表示實施第二實施形態所關連的接合方法之裝置構成的一例之圖。
[實施發明之形態]
以下參照附加的圖式，對本發明所關連的實施形態作說明。
<1.第一實施形態>
第1圖表示本發明的第一實施形態所關連的兩片接合高分子薄膜之方法之流程圖。
在步驟S1之中，在第一高分子薄膜上形成第一無機材料層。然後在步驟S2之中，對形成於第一高分子薄膜上的第一無機材料層的表面實施表面活性化處理。同樣地，在第二高分子薄膜上形成第二無機材料層(步驟S3)，然後對第二無機材料層的表面實施表面活性化處理(步驟S4)。在步驟S2與步驟S4之後，在步驟S5之中，使經過表面活性化處理的第一無機材料層的表面與第二無機材料層的表面互相接觸而接合。經過表面活性化處理的無機材料層的表面，是處在活性化的狀態，因此藉由互相接觸，即使不經過高溫加熱步驟，也可形成具有足夠的接合強度的接合界面。以下參照模式地表示用以實施本發明之裝置之第2圖、及表示各步驟中的生成物的概略斷面之第3圖，對於各步驟作說明。
<1.1高分子薄膜上的無機材料層的形成>
步驟S1及步驟S3中在高分子薄膜上形成無機材料層，可藉由各種手段來進行，而以藉由濺鍍既定無機材料，並使其堆積在高分子薄膜上來進行為佳。
此情況下，如第2圖(a)所示般，在接合裝置1的真空室2內，配置了表面上形成無機材料層的高分子薄 膜F1及F2和由無機材料所構成之濺鍍靶3。以藉著由粒子束源4對濺鍍靶3照射粒子束5，上述無機材料的原子或團簇7往高分子薄膜F1或F2上放射的方式構成為較佳。
在第2圖中，第一高分子薄膜F1與第二高分子 薄膜F2是藉由可移動的支撐體6來支持。藉此，使高分子薄膜在無機材料層的形成中及表面活性化處理中，相對於濺鍍靶或粒子束源作相對移動，可形成厚度均勻的無機材料層，或能夠以均勻的條件對無機材料層實施表面活性化處理。另外，在第一高分子薄膜F1上結束形成第一無機材料層之後，使支撐體6移動，將第二高分子薄膜F2配置在既定位置，使用相同的濺鍍靶3與粒子束源4，可在第二高分子薄膜F2上形成第二無機材料層I2(第2圖(b)、第3圖(a)及第3圖(c))。
形成上述濺鍍靶的材料採用鋁(Al)、銅(Cu) 、鐵(Fe)或該等的合金等，藉此可形成以鋁(Al)、銅(Cu)、鐵(Fe)或該等的合金等的金屬為主成分的無機材料層。形成無機材料層的材料並不受上述金屬限定。例如亦可採用鈦(Ti)、鉭(Ta)、鉻(Cr)、金(Au)或鉑(Pt)等的過渡金屬、含有錫(Sn)、銀(Ag)的焊接合金等。
另外，形成濺鍍靶的材料採用矽(Si)等的非金屬材料，藉此可形成以矽(Si)等的非金屬材料為主成分的無機材料層。非金屬材料亦可採用矽(Si)以外的材料。例如可採用氧化矽(SiO2)、氧化鋁(Al2O3)等或含有該等的氧化物、氮化矽(SiN)、氮化鋁(AlN)、氮化鈦(TiN)等或含有該等的氮化物、碳化矽(SiC)、碳化鈦(TiC)等或含 有該等的碳化物、或含有上述氧化物、氮化物或碳化物的無機材料的複合材料等。
此外，上述無機材料層中，可使同種的物質 積層多層，或可使多種的物質積層多層，以作為本發明所關連的無機材料層。
在以非金屬材料為主成分而形成無機材料層 的情況，宜將既定量的金屬混合至無機材料層。例如在形成以矽(Si)為主成分的無機材料層的情況，宜混合鐵等的過渡金屬，使其在無機材料層的表面以未滿1原子層的比率存在。藉此可提升接合強度。
無機材料層亦可形成在全部的高分子薄膜上 ，或可形成在一部分的高分子薄膜上。例如為了以兩片高分子薄膜夾住既定裝置而加以密封，係以僅在有助於接合的高分子薄膜的外周部形成無機材料層為佳。另外，亦可採用半導體技術領域中的微細構造製作技術，在高分子薄膜上形成具有微細圖案的無機材料層。
<無機材料層的表面活性化處理>
在步驟S2及步驟S4中的無機材料層的表面活性化處理，可藉由各種手段來進行，而由粒子束源4放射出具有既定動能的粒子(粒子束5)，並使該粒子衝撞無機材料層的表面為佳。
在進行表面活性化處理時，如第2圖(b)所示 般，在高分子薄膜F1及F2上形成無機材料層I1及I2之後(第3圖(a)及第3圖(c))，使粒子束源4在轉軸4A周圍轉動，以使其朝向高分子薄膜F1及F2的方式改變粒子束源4的 姿勢。然後，由粒子束源4往無機材料層I1及I2的表面放射具有既定動能的粒子(粒子束5)。藉由此表面活性化處理，無機材料層I1及I2的表面A1(第3圖(b))及表面A2(第3圖(d))會成為高表面能量的狀態。
在如第2圖(a)及(b)所示的裝置構成中，第一 高分子薄膜F1與第二高分子薄膜F2是被可移動的支撐體6所支撐。藉此，可在形成於第一高分子薄膜F1上的第一無機材料層I1的表面活性化處理結束之後，使支撐體6移動，將第二高分子薄膜F2配置於既定位置，使用相同的粒子束源4，對形成於第二高分子薄膜F2上的第二無機材料層I2實施表面活性化處理。
上述說明是在進行步驟S1與步驟S3之後，進 行步驟S2與步驟S4，然而步驟S1至步驟S4的順序並不受其限定。只要步驟S2在步驟S1之後進行，步驟S4在步驟S3之後進行，步驟S5在步驟S2及步驟S4之後進行，則步驟S1至步驟S4的時間順序可適當地變更。例如亦可在進行步驟S1與步驟S2之後，進行步驟S3與步驟S4，然後進行步驟S5。
<粒子束源>
如上述般，以相同的粒子束源構成濺鍍所使用的粒子束源與表面活性化處理所使用的粒子束源，藉此可簡化裝置構成。另外，僅使粒子束源轉動，即可由無機材料層的形成處理切換成表面活性化處理，因此可縮短步驟間所需要的時間。(第2圖(a)及第2圖(b))
粒子束源4可採用如第4圖所示般的線型粒子 束源。線型粒子束源係具有線型(線狀)的粒子束放射口4B，由此放射口4B能夠以線型(線狀)的方式放射粒子束。放射口4B的長度宜為大於相對於粒子束源作相對移動的高分子薄膜所關連的放射口延伸的方向的最大尺寸。
由線型粒子束源所放射出的粒子束，在表面 活性化處理中的某個時間點，會照射無機材料層的表面上的線狀區域。然後，由線型粒子束源往形成無機材料層的高分子薄膜放射出粒子束，同時使粒子束源往與放射口延伸的方向垂直的方向掃描。其結果，線狀粒子束的照射區域會通過接合所關連的無機材料層的整個區域。若線型粒子束源完全通過高分子薄膜上，則藉由對於高分子薄膜上的無機材料層照射粒子束而完成表面活性化處理。
線型粒子束源進行掃描的手段，適合使用於對於面積較大的薄膜表面較均勻地照射粒子束的用途。另外，線型粒子束源可對應於表面活性化的對象的各種表面形狀而較均勻地照射粒子束。
若對於高分子薄膜等的導電性低的材料照射離子等的具有電荷的粒子，則電荷會累積在導電性低的高分子薄膜。累積在此高分子薄膜的電荷，會使照射至高分子薄膜的離子減速，因此無法對於高分子薄膜實施所希望的表面活性化處理。所以，一度受到加速的離子，宜為通過電子雲等使一部分或全部的離子中性化。中性化後的離子會成為中性原子，幾乎不會失去動能，而衝撞至高分子薄膜。粒子束源宜採用內部具有這種中性 化的機構(中和器)，所構成的高速原子束源等(未圖示)。在以下所揭示的實施例中，高速原子束源係具有中和器，該中和器是為了使粒子束中性化而使用。
另外，濺鍍靶宜為往與線型粒子束源的放射 口相同方向延伸，同時具有與放射口對應的長度的線型而形成，並以可相對於高分子薄膜作相對移動的方式構成(未圖示)。藉由線型濺鍍靶，能夠以線型(線狀)的方式放射出無機材料的原子或團簇。
所以，保持線型粒子束源與線型濺鍍靶彼此 在空間中的相對位置關係，亦即保持一體地相對於高分子薄膜作相對掃描，藉此可在面積較大的薄膜的表面上堆積所希望的厚度的無機材料。無機材料之堆積厚度或堆積速度，可藉著由線型粒子束源放射出的粒子束的放射特性，以及線型粒子束源與線型濺鍍靶相對於高分子薄膜的相對掃描速度、掃描次數來控制。
<表面活性化處理後的無機材料層之接合>
在使用粒子束源進行無機材料層的表面活性化處理的情況，以不破壞真空的方式進行無機材料層的表面活性化處理S2及S4以至於使表面活性化處理後的無機材料層I1及I2的表面A1及A2互相接觸的步驟為佳。特別是製程開始前的真空度係以到達1×10-5Pa(帕斯卡)以下的壓力為佳。此真空度對於粒子束源的驅動而言是必須的，同時減少殘存氣體環境中所存在的氧、水或污染粒子等的附著，僅藉由使表面活性化處理後的無機材料層接觸，即可形成具有足夠的接合強度的接合界面。
例如第2圖(c)所示般，支撐體6亦能夠以藉由 設置於支撐高分子薄膜F1與F2之處之間的轉軸6A而折疊的方式來構成。藉此，如第2圖(d)所示般，使用簡略的構成，可使高分子薄膜F1與F2經表面活性化處理後的無機材料層I1與I2的表面A1和A2大致全部接觸，可輕易形成無機材料層I1與I2的接合界面(第3圖(e))。
本發明所關連的高分子薄膜包括聚酯樹脂或 聚醯亞胺樹脂。聚酯樹脂包括聚萘二甲酸乙二酯(PEN)、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、聚三亞甲基對苯二甲酸酯(PTT)等。聚醯亞胺樹脂包括KAPTON(註冊商標)等。但是，高分子薄膜亦不受聚酯樹脂與聚醯亞胺樹脂所限定，亦可適當地選擇其他高分子材料。另外，聚酯樹脂及聚醯亞胺樹脂亦不受以上揭示的材料所限定。
高分子薄膜的厚度在以下所示的實施例之中 為125μm(微米)，然而並不受其限定。高分子薄膜的厚度可因應高分子薄膜的用途適當地選擇。
在以下所揭示的實施例中，高分子薄膜的表 面尺寸可採用7cm見方，在其中直徑5cm左右的圓形區域進行接合，然而不受該等限定。本發明可接合更大面積的高分子薄膜或基板，原則上接合的高分子薄膜或基板的大小不受限制。
另外，還可在形成無機材料層之步驟S1或步 驟S3之前，使具有既定動能的粒子衝撞高分子薄膜的表面，以實施表面活性化處理。高分子薄膜的表面附近可 能會有因為具有高動能的粒子的衝撞而發生改質，而失去高分子薄膜之所希望的特性的情形，或者會有表面粗糙度變大，無法得到足夠的接合強度的情形。所以，粒子的動能宜設定在低於步驟S2或步驟S4的表面活性化處理時的粒子動能。
<實施例1>
第一實施形態的一個實施例，是將PET使用於高分子薄膜，分別對於無機材料層採用鋁(Al)、銅(Cu)或矽(Si)的情況下的接合作說明。
在此實施例中，採用厚度125μm(微米)且大小為約7cm見方的一對PET薄膜。
在高分子薄膜中含有水的情況，會在真空環境中蒸發，而使真空度降低，因此會加長製程開始前的抽真空所需的時間。於是，為了降低PET薄膜所含有的水量，在將PET薄膜導入真空室之前，先在攝氏80度(80℃)加熱1小時。此加熱的溫度，係以在形成高分子薄膜的材料的熔點以下或熱分解溫度以下為佳。
首先，針對無機材料層採用鋁(Al)或矽(Si)的情況作說明。以相同的線型高速原子束源的操作條件，由鋁(Al)形成無機材料層以及由矽(Si)形成無機材料層。由線型高速原子束源，對於鋁(Al)或矽(Si)的濺鍍靶照射由電漿所產生且以1.2kV的電位差加速的氬(Ar)粒子。線型高速原子束源是以93sccm的氬(Ar)供給量，在1.2kV、400mA的條件下驅動。受到加速的氬離子的大部分會因為中和器而大致保持動能，同時中性化。藉著由 粒子束源所放射出的氬原子束的衝撞造成的濺鍍現象，鋁(Al)或矽(Si)的原子或團簇會由濺鍍靶往PET薄膜放射。使線型高速原子束源及線型濺鍍靶成為一體，以1200mm/min的相對速度對於高分子薄膜掃描合計3次。以上述條件，在高分子薄膜上形成10nm左右的鋁(Al)或矽(Si)層。
接下來，不破壞真空環境，對所形成的鋁(Al)或矽(Si)層的表面實施表面活性化處理。表面活性化處理是採用與無機材料層的形成時所使用的相同的線型高速原子束源。藉由以70sccm的氬(Ar)供給量並在1.0kV、100mA的條件下驅動線型高速原子束源，使氬粒子束往高分子薄膜放射，以1200mm/min的相對速度對於高分子薄膜掃描1次。
接下來針對無機材料層採用銅的情況作說明。由線型高速原子束源，對於銅(Cu)濺鍍靶照射由電漿所產生並以1.2kV的電位差加速的氬(Ar)粒子。線型高速原子束源是以93sccm的氬(Ar)供給量，在1.2kV、400mA的條件下驅動。受到加速的氬離子的大部分會藉由中和器而大致保持動能，同時中性化。藉著由粒子束源所放射出的氬原子束的衝撞造成的濺鍍現象，使銅(Cu)的原子或團簇由濺鍍靶往PET薄膜放射。使線型高速原子束源及線型濺鍍靶成為一體，以1200mm/min的相對速度對於高分子薄膜掃描合計6次。以上述條件，可在高分子薄膜上形成10nm左右的銅層。
接下來，不破壞真空環境，對所形成的銅層 的表面實施表面活性化處理。表面活性化處理是採用與無機材料層的形成時所使用的相同的線型高速原子束源。以70sccm的氬(Ar)供給量，在1.0kV、100mA的條件下驅動線型高速原子束源，使氬粒子束往高分子薄膜放射，以1200mm/min的相對速度對於高分子薄膜掃描合計2次。
使以上述的條件表面活性化後且由鋁、銅或矽的相同的材料所形成的兩個無機材料層互相接觸，而接合高分子薄膜。此時，對於薄膜的大致中央部位，藉由直徑50mm左右且大致具有平坦表面的圓形夾具施加3分鐘的10kN左右的力，亦即施加約5MPa左右的壓力。
將真空室內的製程開始前的真空度定為1×10-5帕斯卡(Pa)以下。以不破壞真空的方式，實行上述無機材料層的形成，經過表面活性化處理，然後接合的步驟。
第5圖為拍攝接合後的高分子薄膜得到的影像。確認了在以夾具加壓的部分的大致全體形成了良好的接合區域51。在接合區域內，顏色相異的兩個區域52被認為是未接合區域。在各種實驗結果(參照第5圖、第7圖、第8圖)之中，此區域會出現在相對於夾具而言相同的地方，因此認為是由於夾具並非完全平坦，高分子薄膜並未被充分加壓，無機材料層並未接觸的區域。
在接合時施加1kN至7kN的力，而其他條件定為相同的實驗中，相較於施加10kN的力的情況，未接合區域的面積較大。所以，在以與本實施例相同的接合裝 置進行接合的情況，為了增加接合面積，認為在接合時宜施加10kN以上的力，亦即施加5MPa以上的壓力。另外，在除了施加10kN的力以外將其他條件定為相同的實驗中，加壓時間為1分鐘時，未接合區域的面積很大。所以，在以與本實施例相同的接合裝置進行接合的情況，認為宜在接合時施加10kN以上的力3分鐘以上。
另一方面，未接合區域52可藉由在接合後將高分子薄膜由真空系統取出後，輕輕以手指按壓來消滅(第6圖)。所以可知，只要無機材料層互相接觸，即使輕輕施力也能夠完成高分子薄膜的接合。
茲認為上述實驗結果顯示：藉由使薄膜彼此接觸的機構，對於所有與薄膜接合有關連的地方施加壓力，以使無機材料層間的實際接觸面積增加是有用的。
如第2圖所示的裝置構成是舉例說明的構成，亦可採用其以外的構成。
<實施例2>
在實施例1中是將PIET使用於高分子薄膜，而實施例2是以PEN作為高分子薄膜進行同樣的接合實驗。與PET的情況同樣地可確認在任一無機材料層的情況，皆在被夾具加壓的部分的大致整個區域形成了接合界面。第7圖為無機材料層採用銅的情況下，拍攝接合後的高分子薄膜的接合區域得到的影像。
<實施例3>
在實施例3中，將PEN使用於高分子薄膜，積層矽層與鋁層而形成無機材料層。在本實施例之中，無機材料 層的形成的條件及表面活性化處理的條件與實施例1相異，該等以外的條件為相同。以下針對無機材料層的形成的條件及表面活性化處理的條件作說明。
首先，為了在高分子薄膜上形成矽層，藉由線型高速原子束源，對於矽(Si)的濺鍍靶照射電漿化且以1.2kV的電位差加速的氬(Ar)粒子。以93sccm的氬(Ar)供給量，在1.2kV、400mA的條件下驅動線型高速原子束源。受到加速的氬離子的大部分會藉由中和器而大致保持動能，同時中性化。藉著由粒子束源所放射出的氬粒子的衝撞造成的濺鍍現象，使矽(Si)的原子或團簇由濺鍍靶往PET薄膜放射。使線型高速原子束源及線型濺鍍靶成為一體，以1200mm/min的相對速度對於高分子薄膜掃描1次。
接下來，將濺鍍靶由矽(Si)變更為鋁(Al)，以同樣的條件使鋁(Al)層堆積在矽(Si)層上。藉此可形成5nm左右的無機材料層。
接下來，不破壞真空環境，而對所形成的鋁(Al)層的表面實施表面活性化處理。表面活性化處理是採用與無機材料層的形成時所使用的相同的線型高速原子束源。以70sccm的氬(Ar)供給量，在1.0kV、100mA的條件下驅動線型高速原子束源，使氬粒子束往高分子薄膜放射，以1200mm/min的相對速度對於高分子薄膜掃描1次。
第8圖為拍攝接合後的高分子薄膜得到的影像。可確認在被夾具加壓的部分的大致整個區域，形成 了接合界面。
另外，改變無機材料層內的材料的積層順序，首先在高分子薄膜上形成鋁(Al)層，然後在其上形成矽(Si)層，其他條件定為相同而進行實驗，可得到同樣的結果。(未圖示)
<拉伸試驗>
在將這些接合而成的高分子薄膜之接合體，由接合區域的一端撕開的測試中，高分子薄膜會破壞，而在接合界面並不會發生破壞。此外，對於高分子薄膜的接合體，將一對夾具堅固地接著在高分子薄膜，將這些夾具往與接合面垂直的方向拉伸而進行拉伸試驗。然後，在此拉伸試驗之中，將接合體破壞時所施加的力除以接合面積而得的值稱為拉伸強度。任一試料的情況，在拉伸試驗中，接合界面皆不會發生破壞，而破壞是在高分子薄膜中發生。所以可知，接合界面的拉伸強度高於高分子薄膜的拉伸強度。在任一情況中，至約超過50kgf/cm2的值仍然未觀察到破壞。由以上內容確認了依據本發明所關連的高分子薄膜之接合方法，不經過加熱步驟即可形成具有足夠的機械強度的高分子薄膜之接合體。
在實施例1至3之中，將濺鍍時的線型高速原子束源的加速電壓設定在1.2kV。在將此加速電壓設定在1.5kV的情況，與將加速電壓設定在1.2kV的情況相比，未接合區域較為增加。所以，在這些實施例中，濺鍍時的線型高速原子束源的加速電壓係以未滿1.5kV為佳。亦即，由線型高速原子束源所放射出的粒子的動能以未滿 1.5keV為佳。
在實施例1至3之中，將濺鍍時之線型高速原 子束源的加速電壓設定在1.0kV。但是，不受此加速電壓之值所限定。因應無機材料層的特性、無機材料層的表面活性化處理前的表面的狀態、線型原子束源的電壓以外的各條件等，調節成0.1kV至2kV之值。亦即，將由線型高速原子束源所放射出的粒子的動能調節成為1.0keV至2.0keV。
另外，在實施例1至3之中，形成了厚度為 10nm左右的無機材料層，然而無機材料層的厚度不受其限制。但是，這些實施例之中，由於在無機材料層的厚度未滿3nm的情況，未接合區域會增加，因此無機材料層的厚度係以3nm以上為佳。
<2.第二實施形態>
第9圖為表示為了使第一實施形態所關連的高分子薄膜彼此的接合更有效率地進行而使用的所謂捲對捲(Roll-to-Roll)方式的裝置構成的一例之概略正面圖。
由第一供給輥R1及第二供給輥R2，供給纏繞 於各供給輥的帶狀第一高分子薄膜F1及第二高分子薄膜F2。在位置P11及P12，藉著由粒子束源41及42所放射出的粒子造成的濺鍍現象，由濺鍍靶31及32，往高分子薄膜F1及F2照射既定種類的無機材料，藉此在高分子薄膜F1及F2上形成無機材料層。接下來，對於在裝置內前進的高分子薄膜F1及F2，在位置P21及P22，由粒子束源43及44照射粒子，對於無機材料層的表面實施表面活性化 處理。然後，在一對接合輥R3之間，在位置P31使兩個高分子薄膜接觸，藉由接合輥R3施加必要的壓力，而接合高分子薄膜。藉由接合，將所製造出的積層高分子薄膜F3纏繞於纏繞輥R4。
供給輥、粒子束源、濺鍍靶、接合輥、纏繞 輥等各構成要素並不受第9圖的實施例所限定，可適當地變更配置位置或個數等構成形態。另外，這些各構成要素係以配置在可達到10-5Pa的氣壓的真空室內為佳。
<3.第三實施形態>
在第一及第二實施形態中，是接合高分子薄膜與高分子薄膜，而在第三實施形態中，是將高分子薄膜接合至無機材料的一例的玻璃基板。在本實施形態中，藉由在高分子薄膜與玻璃基板上形成無機材料層，對於所形成的無機材料層的表面實施表面活性化處理，並使表面活性化處理後的無機材料層彼此接觸，而接合高分子薄膜與玻璃基板。
在形成無機材料層前，亦可對玻璃基板的表 面實施表面活性化處理。可設定表面活性化處理時的粒子束源的操作條件，以提高無機材料層與玻璃基板之間的接合界面的強度。
雖未圖示，發明人等確認了藉由本發明，高分子薄膜與玻璃基板會堅固地接合。
在第三實施形態中，無機材料基板的一例是採用玻璃基板，然而並不受其所限。形成無機材料基板的材料，除了玻璃以外，還可採用藍寶石等的氧化物、 碳化矽等的碳化物、氮化物、化合物半導體、矽或鍺等的半導體、陶瓷、一般光學裝置所使用的無機材料等。
以上針對本發明之幾個實施形態作說明，而這些實施形態是舉例說明本發明。例如在上述實施例中，是藉由一次接合步驟接合兩片高分子薄膜，而依據本發明，亦可藉由重覆接合步驟積層三片以上的高分子薄膜。同樣地，亦可在一片玻璃基板積層兩片以上的高分子薄膜，亦可積層多個玻璃基板與一片或多片高分子薄膜。另外，實驗條件也可依照所使用的裝置的特性或配置等的各項條件來調節。在上述實施例中，濺鍍或表面活性化處理用的粒子是採用氬(Ar)，然而並不受其限定。例如亦可採用氙(Xe)等的稀有氣體、氮、氧、或該等的混合氣體。申請專利範圍在不脫離本發明的技術思想的範圍，包括了許多對實施形態作改變的形態。所以，本說明書所揭示的實施形態及實施例是為了舉例說明而揭示，而不應該認為是限定了本發明的申請專利範圍。

Claims (20)

  1. 一種高分子薄膜之接合方法，其係接合高分子薄膜之方法，其具有：在一部分或全部的第一高分子薄膜上形成第一無機材料層之步驟；在一部分或全部的第二高分子薄膜上形成第二無機材料層之步驟；藉由使具有既定動能的粒子衝撞第一無機材料層的表面來進行表面活性化處理之步驟；藉由使具有既定動能的粒子衝撞第二無機材料層的表面來進行表面活性化處理之步驟；及在1×10-5Pa以下的真空度中，使表面活性化處理後的第一無機材料層的表面接觸表面活性化處理後的第二無機材料層的表面，而接合第一高分子薄膜與第二高分子薄膜之步驟；並且形成於該第一高分子薄膜上的第一無機材料層與形成於該第二高分子薄膜上的第二無機材料層，係分別使用濺鍍法形成。
  2. 如申請專利範圍第1項之高分子薄膜之接合方法，其中第一高分子薄膜與第二高分子薄膜係以選自聚醯亞胺樹脂、或聚萘二甲酸乙二酯(PEN)、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)及聚三亞甲基對苯二甲酸酯(PTT)所構成之群組中的聚酯樹脂為主成分而形成。
  3. 如申請專利範圍第1或2項之高分子薄膜之接合方法， 其中第一高分子薄膜與第二高分子薄膜係由相異的材料所形成。
  4. 如申請專利範圍第1或2項之高分子薄膜之接合方法，其中第一無機材料層與第二無機材料層係以選自銅(Cu)、鋁(Al)及鐵(Fe)所構成之群組中的金屬或該等的合金為主成分而形成。
  5. 如申請專利範圍第1或2項之高分子薄膜之接合方法，其中第一無機材料層與第二無機材料層係以矽(Si)為主成分而形成。
  6. 如申請專利範圍第5項之高分子薄膜之接合方法，其中在第一無機材料層與第二無機材料層中含有鐵。
  7. 如申請專利範圍第1或2項之高分子薄膜之接合方法，其中第一無機材料層與第二無機材料層係由多種材料的層所構成。
  8. 如申請專利範圍第1或2項之高分子薄膜之接合方法，其中該表面活性化處理係藉由使具有0.1keV至2keV的動能的氬(Ar)粒子衝撞第一無機材料層及第二無機材料層的表面來進行。
  9. 如申請專利範圍第1或2項之高分子薄膜之接合方法，其中進一步包括：在形成該第一無機材料層之前，在第一高分子薄膜的熔點以下或熱分解溫度以下的溫度加熱第一高分子薄膜之步驟；及在形成該第二無機材料層之前，在第二高分子薄膜的熔點以下或熱分解溫度以下的溫度加熱第二高分 子薄膜之步驟。
  10. 如申請專利範圍第1或2項之高分子薄膜之接合方法，其中在表面活性化處理後的第一無機材料層的表面接觸表面活性化處理後的第二無機材料層的表面時，對第一高分子薄膜與第二高分子薄膜的接合界面朝垂直的方向施加5MPa以上的壓力。
  11. 如申請專利範圍第1或2項之高分子薄膜之接合方法，其中該形成第一無機材料層之步驟與該形成第二無機材料層之步驟，係使用線型粒子束源來進行。
  12. 一種高分子薄膜之接合方法，其係接合高分子薄膜之方法，其具有：由第一供給輥供給帶狀第一高分子薄膜之步驟；由第二供給輥供給帶狀第二高分子薄膜之步驟；在由第一供給輥供給的第一高分子薄膜上形成第一無機材料層之步驟；在由第二供給輥供給的第二高分子薄膜上形成第二無機材料層之步驟；藉由使具有既定動能的粒子衝撞第一無機材料層的表面來進行表面活性化處理之步驟；藉由使具有既定動能的粒子衝撞第二無機材料層的表面來進行表面活性化處理之步驟；在1×10-5Pa以下的真空度中，使表面活性化處理後的第一無機材料層的表面接觸表面活性化處理後的第二無機材料層的表面，而接合第一高分子薄膜與第二高分子薄膜之步驟；及 將藉由第一高分子薄膜與第二高分子薄膜的接合所形成的積層高分子薄膜纏繞於纏繞輥之步驟；並且形成於該第一高分子薄膜上的該第一無機材料層與形成於該第二高分子薄膜上的該第二無機材料層，係分別使用濺鍍法形成。
  13. 一種接合高分子薄膜至無機材料基板之方法，其係接合高分子薄膜至無機材料基板之方法，其具有：在一部分或全部的高分子薄膜上形成第一無機材料層之步驟；在一部分或全部的無機材料基板上形成第二無機材料層之步驟；藉由使具有既定動能的粒子衝撞第一無機材料層的表面來進行表面活性化處理之步驟；藉由使具有既定動能的粒子衝撞第二無機材料層的表面來進行表面活性化處理之步驟；及在1×10-5Pa以下的真空度中，使表面活性化處理後的第一無機材料層的表面接觸表面活性化處理後的第二無機材料層的表面，而接合高分子薄膜與無機材料基板之步驟；並且形成於該高分子薄膜上的該第一無機材料層與形成於該無機材料基板上的該第二無機材料層，係分別使用濺鍍法形成。
  14. 一種高分子薄膜積層體，其具有：第一高分子薄膜、第二高分子薄膜；及 配置於第一高分子薄膜與第二高分子薄膜之間的一部分或全部，並將第一高分子薄膜與第二高分子薄膜接著的無機材料層；並且第一高分子薄膜與第二高分子薄膜係在1×10-5Pa以下的真空度中接著；該無機材料層係使用濺鍍法形成。
  15. 如申請專利範圍第14項之高分子薄膜積層體，其中第一高分子薄膜與第二高分子薄膜係以聚醯亞胺樹脂或聚酯樹脂為主成分而形成。
  16. 如申請專利範圍第14或15項之高分子薄膜積層體，其中該無機材料層係以選自銅(Cu)、鋁(Al)及鐵(Fe)所構成之群組中的金屬或該等的合金為主成分而形成。
  17. 如申請專利範圍第14或15項之高分子薄膜積層體，其中該無機材料層係以矽(Si)為主成分而形成。
  18. 如申請專利範圍第17項之高分子薄膜積層體，其中在該無機材料層中含有鐵。
  19. 如申請專利範圍第14或15項之高分子薄膜積層體，其中該無機材料層係由多種材料的層所構成。
  20. 一種高分子薄膜與無機材料基板之積層體，其具有：高分子薄膜、無機材料基板；及配置於高分子薄膜與無機材料基板之間的一部分或全部，並將高分子薄膜與無機材料基板接著的無機材料之接著層；並且高分子薄膜與無機材料基板係在1×10-5Pa以下的 真空度中接著；該無機材料之接著層係使用濺鍍法形成。
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