TWI583118B - Rectifier, alternator and power conversion device - Google Patents
Rectifier, alternator and power conversion device Download PDFInfo
- Publication number
- TWI583118B TWI583118B TW103142188A TW103142188A TWI583118B TW I583118 B TWI583118 B TW I583118B TW 103142188 A TW103142188 A TW 103142188A TW 103142188 A TW103142188 A TW 103142188A TW I583118 B TWI583118 B TW I583118B
- Authority
- TW
- Taiwan
- Prior art keywords
- mosfet
- gate
- rectifier
- voltage
- circuit
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 12
- 239000000872 buffer Substances 0.000 claims description 102
- 230000001360 synchronised effect Effects 0.000 claims description 49
- 238000004146 energy storage Methods 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 description 49
- 238000010586 diagram Methods 0.000 description 34
- 230000000052 comparative effect Effects 0.000 description 33
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 33
- 229910052732 germanium Inorganic materials 0.000 description 32
- 244000145845 chattering Species 0.000 description 30
- 230000010355 oscillation Effects 0.000 description 20
- 230000000694 effects Effects 0.000 description 19
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 8
- 230000007704 transition Effects 0.000 description 7
- 238000010248 power generation Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000003111 delayed effect Effects 0.000 description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 238000009499 grossing Methods 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000004043 responsiveness Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000008571 general function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
- H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
- H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
- H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
- H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
- H02M7/2195—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration the switches being synchronously commutated at the same frequency of the AC input voltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K2017/307—Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
- Power Conversion In General (AREA)
- Control Of Eletrric Generators (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013257733A JP6371053B2 (ja) | 2013-12-13 | 2013-12-13 | 整流装置、オルタネータおよび電力変換装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201541847A TW201541847A (zh) | 2015-11-01 |
| TWI583118B true TWI583118B (zh) | 2017-05-11 |
Family
ID=53371317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103142188A TWI583118B (zh) | 2013-12-13 | 2014-12-04 | Rectifier, alternator and power conversion device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9966871B2 (enExample) |
| EP (1) | EP3082244B1 (enExample) |
| JP (1) | JP6371053B2 (enExample) |
| CN (1) | CN105814786B (enExample) |
| TW (1) | TWI583118B (enExample) |
| WO (1) | WO2015088020A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11005385B2 (en) | 2019-01-08 | 2021-05-11 | Actron Technology Corporation | Alternator and rectifier thereof |
| TWI783862B (zh) * | 2021-02-17 | 2022-11-11 | 日商日立功率半導體股份有限公司 | 整流電路、整流電路之控制方法 |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953859B (zh) * | 2015-07-06 | 2019-03-22 | 安徽省东科半导体有限公司 | 一种同步二极管 |
| JP6617002B2 (ja) * | 2015-10-20 | 2019-12-04 | 株式会社 日立パワーデバイス | 整流器、それを用いたオルタネータおよび電源 |
| TWI563488B (en) * | 2016-02-01 | 2016-12-21 | Sitronix Technology Corp | Gate driving circuit |
| JP6623958B2 (ja) * | 2016-07-12 | 2019-12-25 | 株式会社デンソー | 駆動対象スイッチの駆動回路 |
| JP6789780B2 (ja) * | 2016-11-28 | 2020-11-25 | 株式会社 日立パワーデバイス | 整流器およびそれを用いたオルタネータ |
| US10128736B1 (en) | 2017-06-23 | 2018-11-13 | Infineon Technologies Ag | Rectifier device |
| DE102017126060B4 (de) * | 2017-11-08 | 2019-06-27 | Infineon Technologies Austria Ag | Ansteuerschaltung für ein transistorbauelement |
| EP3503363A1 (en) * | 2017-12-19 | 2019-06-26 | Koninklijke Philips N.V. | Powering microcontrollers |
| US10333425B1 (en) | 2018-05-03 | 2019-06-25 | Linear Technology Holding Llc | Self-biasing ideal diode circuit |
| CN110707945A (zh) * | 2018-07-10 | 2020-01-17 | Oppo广东移动通信有限公司 | 整流电路、无线充电装置、电源提供设备及无线充电系统 |
| TWI692194B (zh) | 2019-06-27 | 2020-04-21 | 朋程科技股份有限公司 | 交流發電機以及整流裝置 |
| GB2590057B (en) * | 2019-10-10 | 2022-11-16 | Steifpower Tech Company Limited | A Field-Effect Transistor (FET) based synchronous rectifier for emulating a diode |
| US10840795B1 (en) * | 2019-10-16 | 2020-11-17 | Monolithic Power Systems, Inc. | Power transistor driver with reduced spikes for switching converters |
| JP7148476B2 (ja) | 2019-10-25 | 2022-10-05 | 株式会社東芝 | 電力切替器、電力整流器及び電力変換器 |
| JP7296331B2 (ja) * | 2020-03-18 | 2023-06-22 | 株式会社 日立パワーデバイス | ゲート駆動装置およびゲート駆動方法、パワー半導体モジュール、並びに電力変換装置 |
| TWI746215B (zh) * | 2020-10-20 | 2021-11-11 | 朋程科技股份有限公司 | 交流發電機及其整流裝置 |
| TWI766395B (zh) * | 2020-10-20 | 2022-06-01 | 朋程科技股份有限公司 | 交流發電機及其整流裝置 |
| JP2025133302A (ja) * | 2024-03-01 | 2025-09-11 | ミネベアパワーデバイス株式会社 | 半導体装置 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH09105763A (ja) * | 1995-10-11 | 1997-04-22 | Nec Corp | コンパレータ回路 |
| JP2003243971A (ja) * | 2002-02-20 | 2003-08-29 | Fuji Electric Co Ltd | コンパレータ回路 |
| JP2006320179A (ja) * | 2005-05-16 | 2006-11-24 | Hitachi Ltd | 回転電機制御装置 |
| JP2007110869A (ja) * | 2005-10-17 | 2007-04-26 | Matsushita Electric Ind Co Ltd | 電力変換装置 |
| JP2009296807A (ja) * | 2008-06-06 | 2009-12-17 | Hitachi Ltd | 車両用充電発電機およびその整流装置 |
| JP2013005474A (ja) * | 2011-06-13 | 2013-01-07 | Honda Motor Co Ltd | 電源回路 |
| US20130193937A1 (en) * | 2012-01-31 | 2013-08-01 | Kabushiki Kaisha Toshiba | Switching regulator and electronic apparatus |
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| JPS55117824A (en) * | 1979-03-01 | 1980-09-10 | Mitsubishi Electric Corp | Device for eliminating chattering |
| US5216299A (en) * | 1992-02-13 | 1993-06-01 | Standard Microsystems Corporation | Low power noise rejecting TTL to CMOS input buffer |
| US5583457A (en) * | 1992-04-14 | 1996-12-10 | Hitachi, Ltd. | Semiconductor integrated circuit device having power reduction mechanism |
| US5877647A (en) * | 1995-10-16 | 1999-03-02 | Texas Instruments Incorporated | CMOS output buffer with slew rate control |
| SE517685C2 (sv) * | 2000-03-24 | 2002-07-02 | Ericsson Telefon Ab L M | Förfarande och anordning för styrning av en synkron likriktare i en likspänningsomvandlare |
| JP5352964B2 (ja) * | 2007-03-29 | 2013-11-27 | 富士通セミコンダクター株式会社 | Dc−dcコンバータ、電源電圧供給方法、電源電圧供給システム、およびdc−dcコンバータの制御方法 |
| US7821306B2 (en) * | 2007-06-19 | 2010-10-26 | Panasonic Corporation | Switching device drive circuit |
| DE102007060219A1 (de) | 2007-12-14 | 2009-06-18 | Robert Bosch Gmbh | Gleichrichterschaltung |
| US8022679B2 (en) * | 2008-04-18 | 2011-09-20 | Linear Technology Corporation | Systems and methods for fast switch turn on approximating ideal diode function |
| US8064227B2 (en) * | 2008-09-08 | 2011-11-22 | GM Global Technology Operations LLC | Rectifying circuit for a multiphase electric machine |
| JP2012147591A (ja) | 2011-01-13 | 2012-08-02 | Toyota Central R&D Labs Inc | 駆動回路 |
| JP6042091B2 (ja) * | 2011-05-13 | 2016-12-14 | ローム株式会社 | スイッチングレギュレータの制御回路、スイッチングレギュレータおよび電子機器、スイッチング電源装置、テレビ |
| JP2013215039A (ja) * | 2012-04-02 | 2013-10-17 | Denso Corp | 電力変換装置 |
| US20140168829A1 (en) * | 2012-12-18 | 2014-06-19 | Eaton Corporation | Gate Drive Circuits that Control Electromagnetic Interference and Switching Losses and Related Methods |
| KR101502153B1 (ko) * | 2013-04-30 | 2015-03-12 | 주식회사 맵스 | 능동 다이오드 드라이버 |
-
2013
- 2013-12-13 JP JP2013257733A patent/JP6371053B2/ja active Active
-
2014
- 2014-12-04 TW TW103142188A patent/TWI583118B/zh active
- 2014-12-12 CN CN201480067727.XA patent/CN105814786B/zh active Active
- 2014-12-12 EP EP14870115.4A patent/EP3082244B1/en active Active
- 2014-12-12 WO PCT/JP2014/083028 patent/WO2015088020A1/ja not_active Ceased
- 2014-12-12 US US15/104,116 patent/US9966871B2/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09105763A (ja) * | 1995-10-11 | 1997-04-22 | Nec Corp | コンパレータ回路 |
| JP2003243971A (ja) * | 2002-02-20 | 2003-08-29 | Fuji Electric Co Ltd | コンパレータ回路 |
| JP2006320179A (ja) * | 2005-05-16 | 2006-11-24 | Hitachi Ltd | 回転電機制御装置 |
| JP2007110869A (ja) * | 2005-10-17 | 2007-04-26 | Matsushita Electric Ind Co Ltd | 電力変換装置 |
| JP2009296807A (ja) * | 2008-06-06 | 2009-12-17 | Hitachi Ltd | 車両用充電発電機およびその整流装置 |
| JP2013005474A (ja) * | 2011-06-13 | 2013-01-07 | Honda Motor Co Ltd | 電源回路 |
| US20130193937A1 (en) * | 2012-01-31 | 2013-08-01 | Kabushiki Kaisha Toshiba | Switching regulator and electronic apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11005385B2 (en) | 2019-01-08 | 2021-05-11 | Actron Technology Corporation | Alternator and rectifier thereof |
| TWI783862B (zh) * | 2021-02-17 | 2022-11-11 | 日商日立功率半導體股份有限公司 | 整流電路、整流電路之控制方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6371053B2 (ja) | 2018-08-08 |
| CN105814786B (zh) | 2018-07-03 |
| US20160315553A1 (en) | 2016-10-27 |
| JP2015116077A (ja) | 2015-06-22 |
| EP3082244A1 (en) | 2016-10-19 |
| WO2015088020A1 (ja) | 2015-06-18 |
| CN105814786A (zh) | 2016-07-27 |
| TW201541847A (zh) | 2015-11-01 |
| EP3082244A4 (en) | 2017-08-16 |
| US9966871B2 (en) | 2018-05-08 |
| EP3082244B1 (en) | 2020-07-01 |
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