TWI580770B - 包含陽離子聚合物添加劑之拋光組合物 - Google Patents

包含陽離子聚合物添加劑之拋光組合物 Download PDF

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Publication number
TWI580770B
TWI580770B TW105106811A TW105106811A TWI580770B TW I580770 B TWI580770 B TW I580770B TW 105106811 A TW105106811 A TW 105106811A TW 105106811 A TW105106811 A TW 105106811A TW I580770 B TWI580770 B TW I580770B
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TW
Taiwan
Prior art keywords
polishing composition
ppm
chemical mechanical
functionalized
abrasive particles
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TW105106811A
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English (en)
Chinese (zh)
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TW201641662A (zh
Inventor
布萊恩 萊斯
凡 妮絲 唐娜 索特
越 林
賈仁合
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卡博特微電子公司
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Publication of TW201641662A publication Critical patent/TW201641662A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW105106811A 2015-03-05 2016-03-04 包含陽離子聚合物添加劑之拋光組合物 TWI580770B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/639,598 US9758697B2 (en) 2015-03-05 2015-03-05 Polishing composition containing cationic polymer additive

Publications (2)

Publication Number Publication Date
TW201641662A TW201641662A (zh) 2016-12-01
TWI580770B true TWI580770B (zh) 2017-05-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW105106811A TWI580770B (zh) 2015-03-05 2016-03-04 包含陽離子聚合物添加劑之拋光組合物

Country Status (7)

Country Link
US (1) US9758697B2 (OSRAM)
EP (1) EP3265525B1 (OSRAM)
JP (1) JP6799000B2 (OSRAM)
KR (3) KR102859558B1 (OSRAM)
CN (1) CN107429120B (OSRAM)
TW (1) TWI580770B (OSRAM)
WO (1) WO2016141259A1 (OSRAM)

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JP6936233B2 (ja) * 2016-01-25 2021-09-15 シーエムシー マテリアルズ，インコーポレイティド カチオン重合体助剤を含む研磨組成物
CN108117839B (zh) 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种具有高氮化硅选择性的化学机械抛光液
JP7132942B2 (ja) * 2017-04-17 2022-09-07 シーエムシー マテリアルズ，インコーポレイティド バルク酸化物の平坦化のための自己停止研磨組成物および方法
JP7326166B2 (ja) 2017-06-15 2023-08-15 ローディア オペレーションズ セリウム系粒子
CN109251673A (zh) * 2017-07-13 2019-01-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251674B (zh) * 2017-07-13 2021-12-17 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251675B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251676B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN108048844A (zh) * 2017-12-11 2018-05-18 浙江三瑞铜业有限公司 一种金属抛光方法
CN107932199A (zh) * 2017-12-11 2018-04-20 浙江三瑞铜业有限公司 一种金属工件的抛光方法
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
JP7220522B2 (ja) * 2018-05-24 2023-02-10 株式会社バイコウスキージャパン 研磨砥粒、その製造方法、それを含む研磨スラリー及びそれを用いる研磨方法
JP7330676B2 (ja) * 2018-08-09 2023-08-22 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
KR20220083728A (ko) 2019-10-15 2022-06-20 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 연마 조성물 및 이의 사용 방법
KR20220087492A (ko) * 2019-10-22 2022-06-24 씨엠씨 머티리얼즈, 인코포레이티드 실리콘 산화물보다 실리콘 질화물 및 폴리실리콘에 대해 높은 선택성을 갖는 연마 조성물 및 방법
WO2021081176A1 (en) 2019-10-22 2021-04-29 Cmc Materials, Inc. Composition and method for selective oxide cmp
CN114599754B (zh) 2019-11-26 2024-09-13 罗地亚经营管理公司 基于铈的核-壳颗粒的液体分散体和粉末、其生产方法及其在抛光中的用途
US12497541B2 (en) 2021-05-17 2025-12-16 Rhodia Operations Liquid dispersion and powder of cerium based core-shell particles, process for producing the same and uses thereof in polishing
KR20240062238A (ko) * 2022-10-28 2024-05-09 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
WO2025132262A1 (en) 2023-12-21 2025-06-26 Rhodia Operations Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing
WO2025190482A1 (en) 2024-03-13 2025-09-18 Rhodia Operations Cerium oxide particles with cotrolled microstructure

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US20030200702A1 (en) * 2002-04-25 2003-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Bimodal slurry system
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TW201336978A (zh) * 2012-03-14 2013-09-16 Cabot Microelectronics Corp 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
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Also Published As

Publication number Publication date
TW201641662A (zh) 2016-12-01
EP3265525B1 (en) 2020-04-15
KR102889330B1 (ko) 2025-11-21
CN107429120B (zh) 2019-10-01
KR20170126960A (ko) 2017-11-20
JP2018513229A (ja) 2018-05-24
KR102859558B1 (ko) 2025-09-15
EP3265525A4 (en) 2018-08-29
EP3265525A1 (en) 2018-01-10
KR20250053978A (ko) 2025-04-22
CN107429120A (zh) 2017-12-01
WO2016141259A1 (en) 2016-09-09
JP6799000B2 (ja) 2020-12-09
US9758697B2 (en) 2017-09-12
KR20240054386A (ko) 2024-04-25
US20160257853A1 (en) 2016-09-08

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