TWI580767B - 鈷拋光加速劑 - Google Patents
鈷拋光加速劑 Download PDFInfo
- Publication number
- TWI580767B TWI580767B TW104134568A TW104134568A TWI580767B TW I580767 B TWI580767 B TW I580767B TW 104134568 A TW104134568 A TW 104134568A TW 104134568 A TW104134568 A TW 104134568A TW I580767 B TWI580767 B TW I580767B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing composition
- cobalt
- group
- substrate
- polishing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462066484P | 2014-10-21 | 2014-10-21 | |
| US201562197992P | 2015-07-28 | 2015-07-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201634652A TW201634652A (zh) | 2016-10-01 |
| TWI580767B true TWI580767B (zh) | 2017-05-01 |
Family
ID=55761505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104134568A TWI580767B (zh) | 2014-10-21 | 2015-10-21 | 鈷拋光加速劑 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9688885B2 (enExample) |
| EP (1) | EP3210238B1 (enExample) |
| JP (1) | JP6646051B2 (enExample) |
| KR (1) | KR102538575B1 (enExample) |
| CN (1) | CN107148457B (enExample) |
| TW (1) | TWI580767B (enExample) |
| WO (1) | WO2016065060A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9528030B1 (en) * | 2015-10-21 | 2016-12-27 | Cabot Microelectronics Corporation | Cobalt inhibitor combination for improved dishing |
| TWI660017B (zh) | 2016-07-14 | 2019-05-21 | Cabot Microelectronics Corporation | 用於鈷化學機械拋光(cmp)之替代氧化劑 |
| US10077382B1 (en) | 2017-03-06 | 2018-09-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for polishing cobalt-containing substrate |
| US10233356B2 (en) | 2017-03-06 | 2019-03-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing slurry for cobalt-containing substrate |
| JP6901297B2 (ja) * | 2017-03-22 | 2021-07-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| EP3631045B1 (en) * | 2017-05-25 | 2026-02-18 | Fujifilm Electronic Materials U.S.A., Inc. | Chemical mechanical polishing slurry for cobalt applications |
| US10377921B2 (en) | 2017-09-21 | 2019-08-13 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | Chemical mechanical polishing method for cobalt |
| US10170335B1 (en) | 2017-09-21 | 2019-01-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for cobalt |
| US20200172759A1 (en) * | 2018-12-04 | 2020-06-04 | Cabot Microelectronics Corporation | Composition and method for cobalt cmp |
| JP7244642B2 (ja) * | 2019-06-20 | 2023-03-22 | 富士フイルム株式会社 | 研磨液、及び、化学的機械的研磨方法 |
| EP4045226B1 (en) * | 2019-10-15 | 2024-01-03 | FUJIFILM Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
| KR102859110B1 (ko) * | 2020-01-07 | 2025-09-12 | 씨엠씨 머티리얼즈 엘엘씨 | 유도체화된 폴리아미노산 |
| JP2024508243A (ja) * | 2021-02-04 | 2024-02-26 | シーエムシー マテリアルズ リミティド ライアビリティ カンパニー | 炭窒化ケイ素研磨組成物及び方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090184287A1 (en) * | 2008-01-23 | 2009-07-23 | Uwiz Technology Co., Ltd. | Sarcosine compound used as corrosion inhibitor |
| US20090203213A1 (en) * | 2008-02-12 | 2009-08-13 | Samsung Electronics Co., Ltd. | Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the same |
| CN101649164A (zh) * | 2008-08-04 | 2010-02-17 | 罗门哈斯电子材料Cmp控股股份有限公司 | 化学机械抛光组合物及其相关方法 |
| CN102770524A (zh) * | 2010-01-29 | 2012-11-07 | 高级技术材料公司 | 附有金属布线的半导体用清洗剂 |
| CN103228775A (zh) * | 2010-11-29 | 2013-07-31 | 和光纯药工业株式会社 | 铜配线用基板清洗剂及铜配线半导体基板的清洗方法 |
| US20140199840A1 (en) * | 2013-01-11 | 2014-07-17 | Applied Materials, Inc. | Chemical mechanical polishing apparatus and methods |
| TW201437349A (zh) * | 2013-02-28 | 2014-10-01 | 福吉米股份有限公司 | 使用於除去鈷的研磨漿 |
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| US4711735A (en) | 1986-09-12 | 1987-12-08 | Gulley Harold J | Coolant additive with corrosion inhibitive and scale preventative properties |
| US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US5316573A (en) | 1992-03-12 | 1994-05-31 | International Business Machines Corporation | Corrosion inhibition with CU-BTA |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
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| KR100479804B1 (ko) * | 2002-05-30 | 2005-03-30 | 동우 화인켐 주식회사 | 금속 cmp용 연마 슬러리 조성물 |
| JP2004172606A (ja) | 2002-11-08 | 2004-06-17 | Sumitomo Chem Co Ltd | 金属研磨材組成物及び研磨方法 |
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| US8435421B2 (en) | 2007-11-27 | 2013-05-07 | Cabot Microelectronics Corporation | Metal-passivating CMP compositions and methods |
| CN101525563B (zh) | 2008-03-03 | 2011-04-13 | 盟智科技股份有限公司 | 用于后研磨清洁剂的腐蚀抑制剂 |
| CN101580700B (zh) | 2008-05-16 | 2015-08-19 | 盟智科技股份有限公司 | 化学机械研磨的组成物 |
| US8722592B2 (en) | 2008-07-25 | 2014-05-13 | Wincom, Inc. | Use of triazoles in reducing cobalt leaching from cobalt-containing metal working tools |
| US8071479B2 (en) | 2008-12-11 | 2011-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| TWI454561B (zh) | 2008-12-30 | 2014-10-01 | Uwiz Technology Co Ltd | A polishing composition for planarizing the metal layer |
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| EP2502969A1 (en) | 2011-03-22 | 2012-09-26 | Basf Se | A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors |
| WO2012127398A1 (en) | 2011-03-22 | 2012-09-27 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine |
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| US20130186850A1 (en) * | 2012-01-24 | 2013-07-25 | Applied Materials, Inc. | Slurry for cobalt applications |
| TWI456013B (zh) | 2012-04-10 | 2014-10-11 | 盟智科技股份有限公司 | 研磨液組成物 |
| US8717710B2 (en) | 2012-05-08 | 2014-05-06 | HGST Netherlands, B.V. | Corrosion-resistant bit patterned media (BPM) and discrete track media (DTM) and methods of production thereof |
| JP2014072336A (ja) * | 2012-09-28 | 2014-04-21 | Fujimi Inc | 研磨用組成物 |
| JP6156630B2 (ja) * | 2013-05-24 | 2017-07-05 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
| US10358579B2 (en) | 2013-12-03 | 2019-07-23 | Cabot Microelectronics Corporation | CMP compositions and methods for polishing nickel phosphorous surfaces |
| US9735030B2 (en) * | 2014-09-05 | 2017-08-15 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for polishing cobalt films |
-
2015
- 2015-10-21 KR KR1020177013245A patent/KR102538575B1/ko active Active
- 2015-10-21 EP EP15852684.8A patent/EP3210238B1/en active Active
- 2015-10-21 CN CN201580057492.0A patent/CN107148457B/zh active Active
- 2015-10-21 WO PCT/US2015/056749 patent/WO2016065060A1/en not_active Ceased
- 2015-10-21 TW TW104134568A patent/TWI580767B/zh active
- 2015-10-21 US US14/919,449 patent/US9688885B2/en active Active
- 2015-10-21 JP JP2017519258A patent/JP6646051B2/ja active Active
-
2017
- 2017-05-24 US US15/603,634 patent/US9850403B2/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090184287A1 (en) * | 2008-01-23 | 2009-07-23 | Uwiz Technology Co., Ltd. | Sarcosine compound used as corrosion inhibitor |
| US20090203213A1 (en) * | 2008-02-12 | 2009-08-13 | Samsung Electronics Co., Ltd. | Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the same |
| CN101649164A (zh) * | 2008-08-04 | 2010-02-17 | 罗门哈斯电子材料Cmp控股股份有限公司 | 化学机械抛光组合物及其相关方法 |
| CN102770524A (zh) * | 2010-01-29 | 2012-11-07 | 高级技术材料公司 | 附有金属布线的半导体用清洗剂 |
| CN103228775A (zh) * | 2010-11-29 | 2013-07-31 | 和光纯药工业株式会社 | 铜配线用基板清洗剂及铜配线半导体基板的清洗方法 |
| US20140199840A1 (en) * | 2013-01-11 | 2014-07-17 | Applied Materials, Inc. | Chemical mechanical polishing apparatus and methods |
| TW201437349A (zh) * | 2013-02-28 | 2014-10-01 | 福吉米股份有限公司 | 使用於除去鈷的研磨漿 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9850403B2 (en) | 2017-12-26 |
| US20170260421A1 (en) | 2017-09-14 |
| CN107148457B (zh) | 2019-07-09 |
| US20160115353A1 (en) | 2016-04-28 |
| KR20170076719A (ko) | 2017-07-04 |
| TW201634652A (zh) | 2016-10-01 |
| EP3210238B1 (en) | 2019-06-26 |
| JP2017538285A (ja) | 2017-12-21 |
| KR102538575B1 (ko) | 2023-06-01 |
| EP3210238A1 (en) | 2017-08-30 |
| CN107148457A (zh) | 2017-09-08 |
| US9688885B2 (en) | 2017-06-27 |
| WO2016065060A1 (en) | 2016-04-28 |
| EP3210238A4 (en) | 2018-04-18 |
| JP6646051B2 (ja) | 2020-02-14 |
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