KR102538575B1 - 코발트 연마 가속화제 - Google Patents

코발트 연마 가속화제 Download PDF

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Publication number
KR102538575B1
KR102538575B1 KR1020177013245A KR20177013245A KR102538575B1 KR 102538575 B1 KR102538575 B1 KR 102538575B1 KR 1020177013245 A KR1020177013245 A KR 1020177013245A KR 20177013245 A KR20177013245 A KR 20177013245A KR 102538575 B1 KR102538575 B1 KR 102538575B1
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South Korea
Prior art keywords
cobalt
polishing composition
substrate
polishing
substituted
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Korean (ko)
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KR20170076719A (ko
Inventor
스티븐 크래프트
앤드류 울프
필립 더블유. 카터
크리스틴 헤이즈
벤자민 페트로
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씨엠씨 머티리얼즈 엘엘씨
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Publication of KR20170076719A publication Critical patent/KR20170076719A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020177013245A 2014-10-21 2015-10-21 코발트 연마 가속화제 Active KR102538575B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462066484P 2014-10-21 2014-10-21
US62/066,484 2014-10-21
US201562197992P 2015-07-28 2015-07-28
US62/197,992 2015-07-28
PCT/US2015/056749 WO2016065060A1 (en) 2014-10-21 2015-10-21 Cobalt polishing accelerators

Publications (2)

Publication Number Publication Date
KR20170076719A KR20170076719A (ko) 2017-07-04
KR102538575B1 true KR102538575B1 (ko) 2023-06-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177013245A Active KR102538575B1 (ko) 2014-10-21 2015-10-21 코발트 연마 가속화제

Country Status (7)

Country Link
US (2) US9688885B2 (enExample)
EP (1) EP3210238B1 (enExample)
JP (1) JP6646051B2 (enExample)
KR (1) KR102538575B1 (enExample)
CN (1) CN107148457B (enExample)
TW (1) TWI580767B (enExample)
WO (1) WO2016065060A1 (enExample)

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US10233356B2 (en) 2017-03-06 2019-03-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing slurry for cobalt-containing substrate
US10077382B1 (en) 2017-03-06 2018-09-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for polishing cobalt-containing substrate
JP6901297B2 (ja) * 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物
KR102324957B1 (ko) * 2017-05-25 2021-11-15 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 코발트 적용을 위한 화학 기계 연마 슬러리
US10377921B2 (en) 2017-09-21 2019-08-13 Rohm and Haas Electronics Materials CMP Holdings, Inc. Chemical mechanical polishing method for cobalt
US10170335B1 (en) 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
US20200172759A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for cobalt cmp
WO2020255582A1 (ja) * 2019-06-20 2020-12-24 富士フイルム株式会社 研磨液、及び、化学的機械的研磨方法
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TWI769619B (zh) * 2020-01-07 2022-07-01 美商Ｃｍｃ材料股份有限公司 經衍生的聚胺基酸
WO2022170015A1 (en) * 2021-02-04 2022-08-11 Cmc Materials, Inc. Silicon carbonitride polishing composition and method

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Also Published As

Publication number Publication date
US9850403B2 (en) 2017-12-26
EP3210238A1 (en) 2017-08-30
US20160115353A1 (en) 2016-04-28
TW201634652A (zh) 2016-10-01
KR20170076719A (ko) 2017-07-04
WO2016065060A1 (en) 2016-04-28
CN107148457A (zh) 2017-09-08
CN107148457B (zh) 2019-07-09
EP3210238A4 (en) 2018-04-18
JP2017538285A (ja) 2017-12-21
EP3210238B1 (en) 2019-06-26
US9688885B2 (en) 2017-06-27
TWI580767B (zh) 2017-05-01
JP6646051B2 (ja) 2020-02-14
US20170260421A1 (en) 2017-09-14

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