TWI579996B - 半導體元件及其製造方法 - Google Patents

半導體元件及其製造方法 Download PDF

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Publication number
TWI579996B
TWI579996B TW104138452A TW104138452A TWI579996B TW I579996 B TWI579996 B TW I579996B TW 104138452 A TW104138452 A TW 104138452A TW 104138452 A TW104138452 A TW 104138452A TW I579996 B TWI579996 B TW I579996B
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Taiwan
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conductor
layer
semiconductor substrate
semiconductor
disposed
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TW104138452A
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English (en)
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TW201709448A (zh
Inventor
Tien Chung Yang
Lin Chih Huang
Hsien Wei Chen
An Jhih Su
Li Hsien Huang
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Taiwan Semiconductor Mfg Co Ltd
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Publication of TWI579996B publication Critical patent/TWI579996B/zh

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Description

半導體元件及其製造方法
本揭露係關於半導體元件及半導體元件之製造方法。
運用半導體元件的電子器材已成為現今生活中不可或缺的一部分。隨著電子科技的進步，電子器材日益複雜，且涉及了大量的積體電路，以執行所欲的多種功能。因此，電子器材的製造涉及了越來越多的組裝與製備步驟，且製造電子器材中之半導體元件所用的材料也越來越多。因而，本領域持續存在著簡化製程步驟、增加生產效率以及降低每一電子器材相關之製造成本等需求。
在製造半導體元件的過程中，會將半導體元件和多種積體組件組裝在一起，這些積體組件包括具有不同熱力學性質的多種材料。因此，這些積體組件常處於不理想的配置中。這些不理想的配置會導致半導體元件的成品率損失、組件之間的黏結性不佳、出現裂痕、組件分層等問題。更有甚者，半導體元件的組件包括多種金屬材料，其產量稀少故成本較高。不理想的組件配置以及半導體元件的成品率損失會進一步加劇材料浪費，且因此導致製造成本攀高。
隨著涉及到越來越多由不同材料製成的不同組件，且半導體元件製程越來越複雜，要改變半導體元件結構與改善製程所面臨的挑戰也更多。因此，相關領域仍需要能夠改善半導體製備方式與 解決上述缺陷之技術。
本發明提供了一種半導體元件，其包括：一半導體基板；一導電墊，設於半導體基板上；一導體，覆設於導電墊上；一聚合物材料，覆設於半導體基板上並圍繞導體；以及一導電體層，設於導體與聚合物材料之間，其中導電體層與聚合物材料之間的接著強度大於聚合物材料與導體之間的接著強度。
優選地，其中導電體層作為導體之一種子層。
優選地，其中導體與一相鄰導體之間的間隔小於約10μm。
優選地，其中導電體層包括一第一層及一第二層，第一層與聚合物材料相鄰，且第二層與導體相鄰。
優選地，其中接著強度稱為一定量介面能。
優選地，其中第二層利用和導體相同但具有不同微結構之材料所製成。
優選地，其中第一層之厚度實質上大於50nm，且第二層之厚度實質上大於100nm。
優選地，其中第二層與導體實質上利用相同但具有不同晶粒大小的材料所製成。
本發明還提供了一種半導體元件，其包括：一半導體基板；一導電墊，設於半導體基板上；一導體，覆設於導電墊上；一聚合物材料，覆設於半導體基板上且圍繞導體；以及一導電體層，設於導體與聚合物材料之間，其中導電體層包括一元素，其具有和導體不同之一標準電極電位。
優選地，其中導電體層作為導體之一種子層。
優選地，其中元素之一氧化化合物位於導電體層與聚 合物材料之間。
優選地，其中導電體層是一複合結構，其包括數導電層。
優選地，其中導電體層包括一第一層及一第二層，第一層與聚合物材料相鄰，且第二層與導體相鄰。
優選地，其中第一層與導體之間的標準電極電位比介於約2.1至約7.5之間。
優選地，其中第一層之厚度實質上大於50nm，且第二層之厚度實質上大於100nm。
本發明還提供了一種製造一半導體元件之方法，其包括：提供一半導體基板；形成一導電墊於半導體基板上；將一聚合物材料覆設於半導體基板上；圖樣化聚合物材料，以提供一開孔；形成一導電體層以襯接於開孔內；將一導體設於開孔內並與導電體層相鄰；將一模塑料覆設於半導體基板上；以及移除模塑料之一部分，以露出導體之一頂面。
優選地，進一步包括將半導體基板單切為複數個晶粒。
優選地，其中形成導電體層進一步包括形成二可區別層。
優選地，其中聚合物材料之包括一黏滯性大於約1Pa．s。
優選地，其中移除模塑料之一部分包括研磨。
100‧‧‧半導體元件
100a‧‧‧部分
101‧‧‧載板
102‧‧‧半導體基板
102a‧‧‧導電墊
102b‧‧‧表面
102c、103b、104a、105b、109a、110a‧‧‧頂面
103‧‧‧鈍化層
103a、105a‧‧‧開孔
104‧‧‧導體
105‧‧‧聚合物材料
106‧‧‧導電體層
106a、106b‧‧‧層
107‧‧‧模塑料
108‧‧‧晶粒
109、110‧‧‧聚合物
112‧‧‧第一再分布層
112a‧‧‧延伸部分
112b‧‧‧端部
114‧‧‧焊墊
115‧‧‧凸塊
116‧‧‧載板
117‧‧‧通孔
118‧‧‧凹部
120‧‧‧基板
122‧‧‧導電區域
124‧‧‧遮罩層
126‧‧‧焊點結構
201、202、203、204、205、206、207、208、209、210、211‧‧‧操作
W‧‧‧寬度
在閱讀下文實施方式以及附隨圖式時，能夠最佳地理解本揭露的多種態樣。應注意到，根據本領域的標準作業習慣，圖中的各種特徵並未依比例繪製。事實上，為了能夠清楚地進行描述，可 能會刻意地放大或縮小某些特徵的尺寸。
圖1是根據某些實施方式之半導體元件的概要圖式。
圖2是根據某些實施方式之圖1的一半導體元件之一部分的放大圖。
圖3A是根據某些實施方式之具有半導體基板的半導體元件之概要圖式。
圖3B是根據某些實施方式之具有導電墊的半導體元件之概要圖式。
圖3C是根據某些實施方式之具有鈍化層的半導體元件之概要圖式。
圖3D是根據某些實施方式之具有聚合物材料的半導體元件之概要圖式。
圖3E是根據某些實施方式之具有導電體層的半導體元件之概要圖式。
圖3F是根據某些實施方式之具有導體的半導體元件之概要圖式。
圖3G是根據某些實施方式之具有經單切晶元的半導體元件之概要圖式。
圖3H是根據某些實施方式之具有載板與模塑料的半導體元件之概要圖式。
圖3I是根據某些實施方式之具有再分布層、聚合物與焊墊的半導體元件之概要圖式。
圖3J是根據某些實施方式之具有凸塊的半導體元件之概要圖式。
圖3K是根據某些實施方式之不具有和另一晶元或另一封裝體相接著之載板的半導體元件之概要圖式。
以下揭示內容提供了多種實施方式或例示，其能用以實現本揭示內容的不同特徵。下文所述之元件與配置的具體例子係用以簡化本揭示內容。當可想見，這些敘述僅為例示，其本意並非用於限制本揭示內容。舉例來說，在下文的描述中，將一第一特徵形成於一第二特徵上或之上，可能包含某些實施例其中所述的第一與第二特徵彼此直接接觸；且也可能包含某些實施例其中還有而外的元件形成於上述第一與第二特徵之間，而使得第一與第二特徵可能沒有直接接觸。此外，本揭示內容可能會在多個實施例中重複使用元件符號和/或標號。此種重複使用乃是基於簡潔與清楚的目的，且其本身不代表所討論的不同實施例和/或組態之間的關係。
再者，在此處使用空間上相對的詞彙，譬如「之下」、「下方」、「低於」、「之上」、「上方」及與其相似者，可能是為了方便說明圖中所繪示的一元件或特徵相對於另一或多個元件或特徵之間的關係。這些空間上相對的詞彙其本意除了圖中所繪示的方位之外，還涵蓋了裝置在使用或操作中所處的多種不同方位。可能將所述設備放置於其他方位(如，旋轉90度或處於其他方位)，而這些空間上相對的描述詞彙就應該做相應的解釋。
圖1是根據一實施方式的半導體元件100，而100a是圖1中之半導體元件100的一部分。圖2是100a的放大圖。半導體元件100a包括半導體基板102。在某些實施方式中，半導體基板102包括半導體材料，譬如矽，且經製備在利用各種製程所製造的半導體基板102內具有預定的功能性電路，上述製程譬如光刻、蝕刻、沈積、電鍍等。在某些實施方式中，半導體基板102係由一矽晶圓單切所得，譬如利用機械刀或雷射刀。在某些實施方式中，半導體基板102為四邊形、長方形或正方形。
半導體基板102包括一表面102b，且導電墊102a設於表面102b上。在某些實施方式中，導電墊102a和位於半導體基板102之外的電路電性連接，而使得位於內部的電路透過導電墊102a而和位於半導體基板102外部之電路電性連接。在某些實施方式中，導電墊102a透過連接於導電墊102a上的導電跡線(conductive trace)而和導電凸塊電性耦接，而使得半導體基板102的內部電路從導電墊102a到導電凸塊並經由導電跡線而和半導體基板102的外部電路連接。在某些實施方式中，導電墊102a包括金、銀、銅、鎳、鎢、鋁，鈀和/或其合金。
在某些實施方式中，一鈍化層103設於半導體基板102的表面102b上，並覆設於導電墊102a上。在某些實施方式中，鈍化層103圍繞導電墊102a。在某些實施方式中，鈍化層103部分覆蓋一導電墊102a的頂面102c。鈍化層103用以對半導體基板102提供電性絕緣與潮濕防護，而使得半導體基板102與週邊環境隔絕。在某些實施方式中，鈍化層103是利用介電材料所形成，譬如旋塗式玻璃(spin-on glass，SOG)、氧化矽、氮氧化矽、氮化矽或與其相似者。在某些實施方式中，鈍化層103是利用氣相沈積或旋塗製程所形成。
在某些實施方式中，鈍化層103包括位於導電墊102a上方之開孔103a，其係用以將導電墊102a的頂面102c的一部分露出，且因而能夠將導電墊102a透過導電跡線而連接至半導體基板102的外部電路。
在某些實施方式中，將數個導體104覆設於圖1之導電墊102a的頂面102c上，其間隔W小於約10μm。在某些實施方式中，每一導體104位於頂面102c的一露出部分上以及鈍化層103之鄰近開孔103a的一部分上。導體104從從頂面102c的露出部分延伸到導體104的頂面104a，如圖2所示。在某些實施方式中，導體104沿著表面102b的 法線方向延伸。在某些實施方式中，導體104實質上是直立的且由導電墊102a所支撐。
在某些實施方式中，導體104為柱狀，其具有多種剖面形狀，譬如圓形、四方形或多邊形。此外，可選用多種材料作為導體104，譬如金屬或金屬合金。在某些實施方式中，導體104包括銅(Cu)、金(Au)、鉑(Pt)、鈦(Ti)、鎳(Ni)、鋁(Al)等。
在某些實施方式中，將聚合物材料105覆設於鈍化層103上並使其圍繞導體104。聚合物材料105為圍繞導體104插設之介電填料，以便隔離相鄰導體或避免濕氣入侵。在某些實施方式中，聚合物材料105所用的材料包括，譬如，環氧樹脂、聚醯亞胺、聚苯并唑(polybenzoxazole，PBO)、防焊層(solder resist，SR)、ABF薄膜及與其相似者。在某些實施方式中，導體104及聚合物材料105實質上共平面。
在某些實施方式中，在導體104及聚合物材料105之間設有導電體層106。導電體層106實質上比導體104薄，且沿著導體104的縱向側壁延伸。在圖2中，縱向側壁定義為沿著表面102b之法線方向延伸的表面。導電體層106夾設於導體104與聚合物材料105之間，以形成一阻障，以避免導體104與聚合物材料105之間的直接接觸。導電體層106是連續的薄膜，並和聚合物材料105一樣圍繞導體104之縱向側壁。在某些實施方式中，導電體層106包括一元素，所述元素至少有與導體104相異之一物理或化學特性。
在某些實施方式中，導電體層106包括一元素，其標準電極電位和導體104不同。在某些實施方式中，導電體層106包括一元素，其傾向於比導體104更積極地由聚合物材料105獲取氧原子。可在導電體層106與聚合物材料105之間形成上述元素的氧化化合物。所述的氧化化合物可作為一種粘著劑，以進一步地以更牢固的方式接著 導體104與聚合物材料105。導電體層106亦包括一元素其可在導電體層106與導體104之間形成黏結層。導電體層106可以是包括複數個導電層的複合結構，以使其具備兩種不同的特性。
如圖2所示，導電體層106包括至少兩層，層106a與層106b。層106a比起層106b較為靠近聚合物材料105，且層106a提供用以在導電體層106與聚合物材料105之間形成氧化化合物之元素。層106b比起層106a更為靠近導體104，且層106b可提供用以形成黏結層之元素。
在某些實施方式中，層106a和導體104之間的標準電極電位比在約2.1至約7.5之間。在某些實施方式中，層106a和導體104之間的標準電極電位比在約4.0至約5.0之間。在某些實施方式中，層106a和導體104之間的標準電極電位比在約4.3至約4.7之間。層106a可包括譬如Ti、Cr、Al、doped-Si、Zr、Th、Ni等元素。
在某些實施方式中，層106b和導體104之間的標準電極電位比在約0.85至約1.35之間。在某些實施方式中，層106b和導體104之間的標準電極電位比在約0.91至約1.07之間。層106b可包括譬如Pt、Au、Ag、Cu等元素。
在某些實施方式中，導電體層106b包括一元素，此元素在導電體層106與聚合物材料105之間的接著強度大於聚合物材料105與導體104之間的接著強度。在某些實施方式中，接著強度可稱為定量介面能。定量介面能之定義為兩種特定物質之間的定量能量強度值。上述數值的大小表示兩種特定物質之間的接著強度。較高的定量介面能表示二特定物質將具有較高的接著強度。
在本揭露中，導電層106可作為導體104與聚合物材料105之間的強化結構。導電層106之定量介面能高於聚合物材料105與導體104之間的定量介面能。所插入之導電層106可隔離導體104使其 不會直接接觸聚合物材料105；因此可以防止導體104和聚合物材料105之間的分層。在某些實施方式中，層106a和聚合物材料105之間的接著強度大於層106b和聚合物材料105之間的接著強度。
在某些實施方式中，層106a和層106b之間的原子量比可以是約0.6至約1.3。在某些實施方式中，層106a和層106b之間的原子量比可以是約0.65至約0.9。在某些實施方式中，層106a和層106b之間的原子量比可以是約0.70至約0.85。
在某些實施方式中，層106b和導體104之間的原子量比可以是約0.8至約1.2。在某些實施方式中，層106b和導體104之間的原子量比可以是約0.9至約1.1。在某些實施方式中，層106b和導體104之間的原子量比可以是約0.95至約1.05。在某些實施方式中，層106b和導體104可利用相同但具有不同微結構的材料所製成，上述微結構譬如晶體方位或晶粒大小。在某些實施方式中，層106b的晶粒大小可以大於導體104之晶粒大小。在某些實施方式中，層106a的厚度實質上大於50nm，且層106b的厚度實質上大於100nm。在某些實施方式中，層106a和層106b的厚度比可以是約1：1至1：3。
導電體層106可以是進一步延伸至導體104的底面下方。在某些實施方式中，導電體層106的一部分設於導電墊102a和導體104之間。在某些實施方式中，導電體層106設於鈍化層103與導體104之間。在某些實施方式中，導電體層106是圍繞導體104的連續薄膜。在某些實施方式中，導電體層106的寬度為約150nm至約250nm。在某些實施方式中，可選用多種不同的材料作為導電體層106，譬如金屬或金屬合金。
在某些實施方式中，設置模塑料107使其圍繞半導體基板102。在某些實施方式中，設置模塑料107使其鄰近半導體基板102之側壁102d。在某些實施方式中，導體104、聚合物材料105以及 模塑料107之頂面實質上共平面。
在某些實施方式中，半導體元件100包括一聚合物109，其係覆設於模塑料107、導體104與聚合物材料105上。在導體104之頂面104a上方，形成聚合物109之凹部118，如圖2所示。在某些實施方式中，半導體元件100進一步包括一第一再分布層(RDL)112，設於導體104與聚合物109上，如圖2所示。在某些實施方式中，半導體元件100進一步包括一聚合物110，其覆設於聚合物109以及第一再分布層112上，如圖2所示。在某些實施方式中，半導體元件100進一步包括通孔117，其係形成於第一再分布層112之一端部112b上方，以及焊墊114，其係設置於聚合物110與第一再分布層112上，如圖2所示。在某些實施方式中，半導體元件100進一步包括一凸塊115，其設於焊墊114上，如圖2所示。
圖3A至圖3K繪示製造半導體元件之方法的一實施方式。所述方法包括多個操作(201、202、203、204、205、206、207、208、209、210及211)。
在操作201中，提供一半導體基板102，如圖3A所示。在某些實施方式中，半導體基板102包括半導體材料，譬如矽。在操作202中，在半導體基板102上形成導電墊102a，如圖3B所示。在某些實施方式中，在半導體基板102的表面102b上設置導電墊102a。
在操作203中，將鈍化層103覆設於半導體基板102上，且移除鈍化層103的某些部分，以形成開孔103a，如圖3C所示。在某些實施方式中，利用蝕刻操作來移除鈍化層103之位於導電墊102a的頂面102c上方的某些部分，以使導電墊102a的頂面102c露出，並形成開孔103a。在某些實施方式中，開孔103a由鈍化層103的頂面103b延伸至導電墊102a的頂面102c。
在操作204中，將聚合物材料105覆設於導電墊102a與 鈍化層103上，且將聚合物材料105圖樣化，使其在導電墊102a上方具有一開孔105a，如圖3D所示。在某些實施方式中，開孔105a的寬度在約10μm至約100μm之間。將聚合物材料105圖樣化，以提供可供導電材料或導電跡線通過之路徑。在某些實施方式中，利用光刻來圖樣化聚合物材料105，以形成開孔105a，且可形成多個聚合物區塊，如圖3D所示。相鄰之聚合物區塊之間的間隔可以是40μm至100μm。在某些實施方式中，設置一光阻材料使其覆蓋於聚合物材料105上，且之後使光阻材料部分透過光遮罩而露出，以便將鄰近或覆設於導電墊102a上之聚合物材料105蝕去，而使得能夠在導電墊102a上方形成開孔105a。
在操作205中，以導電體層106圍繞導電墊102a、鈍化層103與聚合物材料105，如圖3E所示。在某些實施方式中，利用電鍍或沈積來設置導電體層106。在某些實施方式中，利用濺鍍來形成導電體層106，且其可作為導體之種子層。導電體層106為一薄膜，可將其設置於開孔105a內並沿著開孔105a的露出表面而設置。導電體層106的一部分亦可覆蓋導電墊102a。形成導電體層106之操作可進一步包括兩個次操作，以分別形成圖2所示之層106a與106b。可以在原位(in-situ)或獨立地形成層106a與106b，且以分析工具(如穿透式電子顯微鏡(TEM)或掃描式電子顯微鏡(SEM))分析時，這兩層之間的微結構可彼此區隔。
在操作206中，將導體104覆設於導電體層106上並與其相鄰，如圖3F所示。因為導體104是在定義了開孔105a之後才形成的，可利用聚合物材料105之寬度與間隔來決定導體之間隔W。進行先填充(在形成導體104之前先形成聚合物材料之圖樣)操作的優點在於可確保相鄰導體104之間的隙縫填充品質。先填充操作可以滿足小間隔導體之要求，譬如W小於10μm者。用以作為導體隙縫填料之 之聚合物材料105的黏滯性可介於1至1000Pa．s之間。若在形成了小間隔導體之後才將聚合物材料105填入導體隙縫中，聚合物材料105的流動阻力可能會導致較差的隙縫填充，譬如在導體間出現空洞。較差的隙縫填充品質不只會造成視覺上的瑕疵，還會造成某些嚴重的可靠性失效。本揭露所提出的先填充操作提供了一解決方案，其能夠消除不理想的隙縫填充不良問題。由於在形成任何不平整表面(譬如導體陣列)之前就先將聚合物材料105係披覆塗覆(blanket coated)於半導體基板上，聚合物材料105的填隙能力對於元件瑕疵以及可靠性品質就沒有重大的影響。當可理解，由於開孔105a是利用光刻操作所形成，可以利用先進的曝光技術，來降低開孔105a(用以供設置一導體104於其中)的大小。因此，可藉由先填充操作來滿足對於小間隔導體104(W<10μm)之需求。在某些實施方式中，可利用多種方法來設置導體104，譬如電鍍、濺鍍或其他。在某些實施方式中，導體104包括一金屬，譬如銅。
在操作207中，將半導體基板102單切成為數個個別的晶粒108，如圖3G所示。在某些實施方式中，利用機械或雷射刀具來單切半導體基板102。
在操作208中，將由半導體基板102單切所得之晶粒108放置於載板116上。將模塑料107設置於載板116上並圍繞晶粒108。進行移除或平面化技術操作，以移除模塑料107的一部分，以便露出導體104的頂面104a以及聚合物材料105的頂面105b，而使得在導體104與聚合物材料上沒有殘存的模塑料107。圖3H為移除操作之後的結構之一實施方式。在某些實施方式中，利用一操作，譬如蝕刻或研磨，同時移除模塑料107、導體104與導電體層106的上部，以使其共平面。
在操作209中，將聚合物109覆設於模塑料107、導體 104及聚合物材料105上，如圖3I所示。在某些實施方式中，聚合物109包括一聚合物材料，譬如環氧樹脂、聚醯亞胺、聚苯并唑(PBO)、防焊層(SR)、ABF薄膜及與其相似者。
在導體104的頂面104a上方形成凹部118，如圖3I所示。在某些實施方式中，利用光刻移除位於頂面104a上方之聚合物109某些部分。
設置第一再分布層(RDL)112，如圖3I所示。在某些實施方式中，利用電鍍或濺鍍將第一RDL 112設置於聚合物109上。在某些實施方式中，第一RDL 112包括一延伸部分112a，其由聚合物109的頂面109a延伸到導體104的頂面104a。延伸部分112a沿著凹部118而設置。第一RDL 112經由頂面104a與延伸部分112a而和導體104電性連接。
設置一聚合物110，如圖3I所示。在某些實施方式中，將聚合物110設於第一RDL 112上。聚合物110覆蓋半導體元件100的上部。在某些實施方式中，聚合物110包括一聚合物材料譬如環氧樹脂、聚醯亞胺、聚苯并唑(PBO)、防焊層(SR)、ABF薄膜及與其相似者。
形成通孔117並設置焊墊114，如圖3I所示。在某些實施方式中，藉由移除在第一RDL 112上方之聚合物110之某些部分來形成通孔117。在某些實施方式中，利用光刻來移除聚合物110的某些部分，以形成通孔117。在某些實施方式中，通孔117呈漸縮之配置。在某些實施方式中，通孔117由聚合物110的頂面110a延伸至第一RDL 112的一端部112b。
在某些實施方式中，在第一RDL的端部112b與聚合物110上方形成焊墊114。在某些實施方式中，焊墊114填滿通孔117並由聚合物110的頂面110a延伸至第一RDL的端部112b，而使得焊墊114和 第一RDL 112電性連接。在某些實施方式中，焊墊114為凸塊底層金屬(UBM)墊，這是一種可焊接表面，其可用以接收一凸塊並可將焊墊114和晶粒108之外部電路電性連接。
在操作210中，將凸塊115設置於焊墊114上，如圖3J所示。在某些實施方式中，凸塊115為焊接凸塊、焊球、焊膠等。在某些實施方式中，凸塊115用以和另一晶粒、另一基板或另一半導體封裝體上之一接墊相連接。在某些實施方式中，凸塊115是導電凸塊或導電接點。在某些實施方式中，導電墊102a透過導體104、第一RDL 112與焊墊114和凸塊115電性連接。
在操作211中，將載板101從半導體元件100移除，如圖3K所示。在某些實施方式中，將半導體元件100和載板101分離，以便進行後續操作。
將圖3J所示之結構上下翻轉並連接至位於圖3K下方之另一基板120。基板120可以封裝基板、電路板(如，印刷電路板(PCB))、晶圓、晶粒、中介基板或其他適當基板。可藉由各種導電連接點將凸塊結構耦接至基板120。舉例來說，可在基板120上形成一導電區域122並將其圖樣化。導電區域122可以是一接墊或導電跡線的一部分，其可由一遮罩層124所呈現。於一實施方式中，遮罩層124是形成於基板120上且經圖樣化之防焊層，其可用以露出導電區域122。遮罩層124有一遮罩開孔，其提供了一窗可供焊點形成。舉例來說，可在導電區域122上提供一焊料層，包括錫、鉛、銀、銅、鎳、鉍或其組合之合金。可透過焊墊114與導電區域122之間的焊點結構126，將半導體元件100耦接至基板120。一例示性的耦接製程包括一焊劑施用、晶片放置、融化焊點之回填和/或焊劑殘餘之清除等。可將半導體基板102、焊點結構126與其他基板120稱為一封裝組件，或於本實施方式中，稱為覆晶封裝組件。
在某些實施方式中，利用一封裝凸塊，將半導體元件100含另一封裝體接著，以得到一種堆疊式封裝(package on package，PoP)。在某些實施方式中，透過封裝凸塊將半導體元件100和另一封裝體電性連接。在某些實施方式中，透過數個封裝凸塊，將半導體元件100的多個導電元件相應地接著到另一封裝體之多個封裝墊，以成為PoP。
在某些實施方式中，一半導體元件包括半導體基板、設於半導體基板上之導電墊以及覆設於導電墊上之導體。半導體元件進一步有覆設於半導體基板上並圍繞導體之聚合物材料。半導體元件還包括介於導體與聚合物材料之間的導電體層。在半導體元件中，導電體層與聚合物材料之間的接著強度大於聚合物材料與導體之間的接著強度。
在某些實施方式中，所述導電體層作為導體的種子層。在某些實施方式中，導體與一相鄰導體之間的間隔小於約10μm。在某些實施方式中，導電體層包括第一層與第二層，第一層和聚合物材料相鄰，且第二層和導體相鄰。在某些實施方式中，第一層與第二層之間的原子量比為約0.6至約1.3。在某些實施方式中，第二層與導體之間的原子量比為約0.8至約1.2。在某些實施方式中，第一層的厚度實質上大於50nm，且第二層的厚度實質上大於100nm。在某些實施方式中，第二層和導體實質上實質上利用相同但具有不同晶粒大小的材料所製成。
在某些實施方式中，一半導體元件包括半導體基板、設於半導體基板上之導電墊以及覆設於導電墊上之導體。半導體元件進一步有覆設於半導體基板上並圍繞導體之聚合物材料。半導體元件還包括介於導體與聚合物材料之間的導電體層。在半導體元件中，導電體層包括一元素，此元素的標準電極電位和該導體不同。
在某些實施方式中，所述元素的標準電極電位低於導 體的標準電極電位。在某些實施方式中，上述元素的氧化化合物位於導電體層與聚合物材料之間。在某些實施方式中，導電體層為複合結，其構包括數個導電層。在某些實施方式中，導電體層包括第一層與一第二層，第一層和聚合物材料相鄰，且第二層和導體相鄰。在某些實施方式中，第一層與導體之間的標準電極電位比為介於約2.1至約7.5之間。在某些實施方式中，第一層的厚度實質上大於50nm，且第二層的厚度實質上大於100nm。
在某些實施方式中，製造半導體元件的方法包括：提供一半導體基板；形成一導電墊於半導體基板上；及將一聚合物材料覆設於半導體基板上。所述方法進一步包括：將聚合物材料圖樣化，以提供一開孔；形成襯接於開孔內的導電體層；以及將導體設於該開孔內並與該導電體層相鄰。所述方法還包括：將模塑料覆設於半導體基板上；以及移除模塑料的一部分，以露出導體之頂面。
在某些實施方式中，進一步包括將半導體基板單切形成複數個晶粒。在某些實施方式中，形成導電體層進一步包括形成兩個可區別層。在某些實施方式中，聚合物材料的黏滯性大於約1Pa．s。在某些實施方式中，移除模塑料的一部分包括研磨。
上文的敘述簡要地提出了本發明某些實施例之特徵，而使得本發明所屬技術領域具有通常知識者能夠更全面地理解本揭示內容的多種態樣。本發明所屬技術領域具有通常知識者當可明瞭，其可輕易地利用本揭示內容作為基礎，來設計或更動其他製程與結構，以實現與此處所述之實施方式相同的目的和/或達到相同的優點。本發明所屬技術領域具有通常知識者應當明白，這些均等的實施方式仍屬於本揭示內容之精神與範圍，且其可進行各種變更、替代與更動，而不會悖離本揭示內容之精神與範圍。
100‧‧‧半導體元件
100a‧‧‧部分
102‧‧‧半導體基板
103‧‧‧鈍化層
104‧‧‧導體
105‧‧‧聚合物材料
107‧‧‧模塑料
112‧‧‧第一再分布層
114‧‧‧焊墊
115‧‧‧凸塊
W‧‧‧寬度

Claims (10)

  1. 一種半導體元件，其包括：一半導體基板；一導電墊，設於該半導體基板上；一導體，覆設於該導電墊上；一聚合物材料，覆設於該半導體基板上並圍繞該導體；以及一導電體層，設於該導體與該聚合物材料之間，其中該導電體層與該聚合物材料之間的接著強度大於該聚合物材料與該導體之間的接著強度。
  2. 如請求項1所述之半導體元件，其中該導電體層作為該導體之一種子層。
  3. 如請求項1所述之半導體元件，其中該導電體層包括一第一層及一第二層，該第一層與該聚合物材料相鄰，且該第二層與該導體相鄰。
  4. 如請求項3所述之半導體元件，其中該第二層利用和該導體相同但具有不同微結構之材料所製成。
  5. 如請求項3所述之半導體元件，其中該第二層與該導體實質上利用相同但具有不同晶粒大小的材料所製成。
  6. 一種半導體元件，其包括：一半導體基板； 一導電墊，設於該半導體基板上；一導體，覆設於該導電墊上；一聚合物材料，覆設於該半導體基板上且圍繞該導體；以及一導電體層，設於該導體與該聚合物材料之間，其中該導電體層包括一元素，其具有和該導體不同之一標準電極電位；其中該元素之一氧化化合物位於該導電體層與該聚合物材料之間。
  7. 如請求項6所述之半導體元件，其中導電體層包括一第一層及一第二層，第一層與聚合物材料相鄰，且第二層與導體相鄰；其中第一層與導體之間的標準電極電位比介於約2.1至約7.5之間。
  8. 如請求項6所述之半導體元件，其中該導電體層是一複合結構，其包括數導電層。
  9. 一種製造一半導體元件之方法，其係製造如請求項1~8中任一項之半導體元件之方法，其包括：提供一半導體基板；形成一導電墊於該半導體基板上；將一聚合物材料覆設於該半導體基板上；圖樣化該聚合物材料，以提供一開孔；形成一導電體層以襯接於該開孔內；將一導體設於該開孔內並與該導電體層相鄰；將一模塑料覆設於該半導體基板上；以及 移除該模塑料之一部分，以露出該導體之一頂面。
  10. 如請求項9所述之方法，其中形成該導電體層進一步包括形成二可區別層。
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