TWI577035B - 用於製備光敏元件及增加包含於其中之塊材異質接面的結晶度之熱退火及溶劑蒸汽退火方法 - Google Patents

用於製備光敏元件及增加包含於其中之塊材異質接面的結晶度之熱退火及溶劑蒸汽退火方法 Download PDF

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TWI577035B
TWI577035B TW100112285A TW100112285A TWI577035B TW I577035 B TWI577035 B TW I577035B TW 100112285 A TW100112285 A TW 100112285A TW 100112285 A TW100112285 A TW 100112285A TW I577035 B TWI577035 B TW I577035B
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Taiwan
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solvent
annealing
bulk heterojunction
organic photoactive
bulk
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TW100112285A
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Chinese (zh)
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TW201210049A (en
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史堤芬Ｒ 佛瑞特
馬克Ｅ 湯普生
韋國丹
王思軼
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美國密西根州立大學
美國南加州大學
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
TW100112285A 2010-04-08 2011-04-08 用於製備光敏元件及增加包含於其中之塊材異質接面的結晶度之熱退火及溶劑蒸汽退火方法 TWI577035B (zh)

Applications Claiming Priority (2)

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US32203910P 2010-04-08 2010-04-08
US39364610P 2010-10-15 2010-10-15

Publications (2)

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TW201210049A TW201210049A (en) 2012-03-01
TWI577035B true TWI577035B (zh) 2017-04-01

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TW100112285A TWI577035B (zh) 2010-04-08 2011-04-08 用於製備光敏元件及增加包含於其中之塊材異質接面的結晶度之熱退火及溶劑蒸汽退火方法
TW105142138A TWI612683B (zh) 2010-04-08 2011-04-08 用於製備光敏元件及增加包含於其中之塊材異質接面的結晶度之熱退火及溶劑蒸汽退火方法

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US (1) US9768402B2 (enExample)
EP (1) EP2556548B1 (enExample)
JP (1) JP5933524B2 (enExample)
KR (4) KR20180108918A (enExample)
CN (1) CN102939673B (enExample)
AU (1) AU2011237636A1 (enExample)
CA (1) CA2795742A1 (enExample)
TW (2) TWI577035B (enExample)
WO (1) WO2011127186A1 (enExample)

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CN104919615A (zh) * 2012-11-22 2015-09-16 密歇根大学董事会 在有机光伏器件的沉积后加工期间使用反向准外延来修改有序性
CN103236503B (zh) * 2013-04-22 2015-07-01 国家纳米科学中心 一种聚合物太阳能电池及其制备方法
KR102185609B1 (ko) * 2013-06-20 2020-12-02 닛산 가가쿠 가부시키가이샤 n형 유기 반도체 박막의 제조 방법
TW201501340A (zh) * 2013-06-27 2015-01-01 Inst Nuclear Energy Res Atomic Energy Council 製備大面積有機太陽能電池之方法
JP2015165529A (ja) * 2014-02-28 2015-09-17 セイコーエプソン株式会社 有機半導体膜の製造方法、有機半導体膜、薄膜トランジスタ、アクティブマトリクス装置、電気光学装置および電子機器
KR101515118B1 (ko) * 2014-03-12 2015-06-05 포항공과대학교 산학협력단 C60 및 공액계 유기 분자의 수직성장 나노 구조체의 제조 방법
CN106816533B (zh) * 2017-03-09 2019-05-31 南京邮电大学 一种酞菁衍生物薄膜作为阴极缓冲层的倒置有机太阳能电池及其制备方法
CN108807675A (zh) * 2018-05-07 2018-11-13 南京邮电大学 一种表面钝化钙钛矿薄膜的太阳能电池制备方法
CN111628091A (zh) * 2020-06-08 2020-09-04 西北工业大学 一种溶剂浴辅助热处理改善钙钛矿薄膜质量的方法

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Also Published As

Publication number Publication date
EP2556548B1 (en) 2022-02-23
TW201715739A (zh) 2017-05-01
CN102939673A (zh) 2013-02-20
TWI612683B (zh) 2018-01-21
KR20200127032A (ko) 2020-11-09
TW201210049A (en) 2012-03-01
KR20230058180A (ko) 2023-05-02
AU2011237636A1 (en) 2012-11-08
KR20180108918A (ko) 2018-10-04
KR20130094700A (ko) 2013-08-26
CA2795742A1 (en) 2011-10-13
JP2013527978A (ja) 2013-07-04
CN102939673B (zh) 2018-05-15
US9768402B2 (en) 2017-09-19
JP5933524B2 (ja) 2016-06-08
EP2556548A1 (en) 2013-02-13
WO2011127186A1 (en) 2011-10-13
US20130210189A1 (en) 2013-08-15

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