TWI570864B - 具有焊線通孔的微電子封裝、其之製造方法以及用於其之硬化層 - Google Patents

具有焊線通孔的微電子封裝、其之製造方法以及用於其之硬化層 Download PDF

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TWI570864B
TWI570864B TW103103350A TW103103350A TWI570864B TW I570864 B TWI570864 B TW I570864B TW 103103350 A TW103103350 A TW 103103350A TW 103103350 A TW103103350 A TW 103103350A TW I570864 B TWI570864 B TW I570864B
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Taiwan
Prior art keywords
wire
welding
forming
microelectronic
substrate
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TW103103350A
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English (en)
Chinese (zh)
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TW201448151A (zh
Inventor
菲立普 丹柏格
趙之忠
艾里斯 查
羅西安 阿拉托勒
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英帆薩斯公司
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Priority claimed from US13/757,673 external-priority patent/US8940630B2/en
Priority claimed from US13/757,677 external-priority patent/US9136254B2/en
Application filed by 英帆薩斯公司 filed Critical 英帆薩斯公司
Publication of TW201448151A publication Critical patent/TW201448151A/zh
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Publication of TWI570864B publication Critical patent/TWI570864B/zh

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    • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
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    • H01L2225/06565—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices
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    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1052—Wire or wire-like electrical connections
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    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Wire Bonding (AREA)
TW103103350A 2013-02-01 2014-01-29 具有焊線通孔的微電子封裝、其之製造方法以及用於其之硬化層 TWI570864B (zh)

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US13/757,673 US8940630B2 (en) 2013-02-01 2013-02-01 Method of making wire bond vias and microelectronic package having wire bond vias
US13/757,677 US9136254B2 (en) 2013-02-01 2013-02-01 Microelectronic package having wire bond vias and stiffening layer

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9446943B2 (en) 2013-05-31 2016-09-20 Stmicroelectronics S.R.L. Wafer-level packaging of integrated devices, and manufacturing method thereof
US9802813B2 (en) 2014-12-24 2017-10-31 Stmicroelectronics (Malta) Ltd Wafer level package for a MEMS sensor device and corresponding manufacturing process
JP6271463B2 (ja) 2015-03-11 2018-01-31 東芝メモリ株式会社 半導体装置
US10249515B2 (en) * 2016-04-01 2019-04-02 Intel Corporation Electronic device package
US10002844B1 (en) * 2016-12-21 2018-06-19 Invensas Bonding Technologies, Inc. Bonded structures
EP3462494B1 (en) * 2017-09-29 2021-03-24 Detection Technology OY Integrated radiation detector device
CN110504172A (zh) * 2018-05-16 2019-11-26 中芯长电半导体（江阴）有限公司 垂直打线结构、堆叠芯片封装结构及方法
US11990859B2 (en) 2018-05-28 2024-05-21 Borealis Ag Devices for a photovoltaic (PV) module

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211574B1 (en) * 1999-04-16 2001-04-03 Advanced Semiconductor Engineering Inc. Semiconductor package with wire protection and method therefor
TW200539406A (en) * 2004-05-31 2005-12-01 Via Tech Inc Circuit carrier and manufacturing process thereof
TW201250979A (en) * 2011-05-03 2012-12-16 Tessera Inc Package-on-package assembly with wire bonds to encapsulation surface

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5032196B1 (ko) * 1970-11-13 1975-10-18
JPS61102745A (ja) * 1984-10-26 1986-05-21 Toshiba Corp 半導体装置
JP2000058603A (ja) * 1998-08-10 2000-02-25 Fuji Electric Co Ltd 超音波ワイヤボンダ
JP4526651B2 (ja) * 1999-08-12 2010-08-18 富士通セミコンダクター株式会社 半導体装置
US6765287B1 (en) 2001-07-27 2004-07-20 Charles W. C. Lin Three-dimensional stacked semiconductor package
US7176506B2 (en) 2001-08-28 2007-02-13 Tessera, Inc. High frequency chip packages with connecting elements
JP3767512B2 (ja) * 2002-04-25 2006-04-19 株式会社デンソー ワイヤボンディング方法
JP3765778B2 (ja) 2002-08-29 2006-04-12 ローム株式会社 ワイヤボンディング用キャピラリ及びこれを用いたワイヤボンディング方法
US7371676B2 (en) * 2005-04-08 2008-05-13 Micron Technology, Inc. Method for fabricating semiconductor components with through wire interconnects
US7307348B2 (en) * 2005-12-07 2007-12-11 Micron Technology, Inc. Semiconductor components having through wire interconnects (TWI)
US8058101B2 (en) 2005-12-23 2011-11-15 Tessera, Inc. Microelectronic packages and methods therefor
US20070181645A1 (en) * 2006-01-13 2007-08-09 Ho Wing Cheung J Wire bonding method and apparatus
US7659612B2 (en) * 2006-04-24 2010-02-09 Micron Technology, Inc. Semiconductor components having encapsulated through wire interconnects (TWI)
US8598717B2 (en) * 2006-12-27 2013-12-03 Spansion Llc Semiconductor device and method for manufacturing the same
JP5120266B6 (ja) * 2007-01-31 2018-06-27 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP4926787B2 (ja) * 2007-03-30 2012-05-09 アオイ電子株式会社 半導体装置の製造方法
JP2009088254A (ja) * 2007-09-28 2009-04-23 Toshiba Corp 電子部品パッケージ及び電子部品パッケージの製造方法
US8048720B2 (en) * 2008-01-30 2011-11-01 Kulicke And Soffa Industries, Inc. Wire loop and method of forming the wire loop
JP5339800B2 (ja) 2008-07-10 2013-11-13 三菱電機株式会社 半導体装置の製造方法
JP5734236B2 (ja) * 2011-05-17 2015-06-17 株式会社新川 ワイヤボンディング装置及びボンディング方法
US8836136B2 (en) * 2011-10-17 2014-09-16 Invensas Corporation Package-on-package assembly with wire bond vias

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211574B1 (en) * 1999-04-16 2001-04-03 Advanced Semiconductor Engineering Inc. Semiconductor package with wire protection and method therefor
TW200539406A (en) * 2004-05-31 2005-12-01 Via Tech Inc Circuit carrier and manufacturing process thereof
TW201250979A (en) * 2011-05-03 2012-12-16 Tessera Inc Package-on-package assembly with wire bonds to encapsulation surface

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TW201448151A (zh) 2014-12-16
WO2014121090A1 (en) 2014-08-07

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