TWI570864B - Microelectronic package having wire bond vias, method of making and stiffening layer for same - Google Patents

Description

Microelectronic package with wire through holes, method of manufacturing the same, and hardened layer therefor

The main content of the present application relates to the packaging of microelectronic components and related circuitry, for example, a method for fabricating a structure having a plurality of conductive vias (for example, a microelectronic package), the conductive vias The holes are in the form of wire bonds extending from a soldering surface of a substrate (eg, the surface of a conductive element located at a surface of the substrate).

Cross-references to related applications

The present application claims priority to U.S. Patent Application Serial No. 13/757,673, the entire disclosure of which is incorporated herein to The disclosure is hereby incorporated by reference.

Microelectronic devices (eg, semiconductor wafers) typically require many input and output connections to connect to other electronic components. The input and output contacts of a semiconductor wafer or other comparable device are typically arranged to substantially cover a surface-like grid pattern of a surface of the device (commonly referred to as an "area array"), or It may extend into a plurality of elongated columns parallel to and adjacent to each edge of the front surface of the device, or may be disposed in the center of the front surface. In general, devices such as wafers must actually be mounted on a substrate (eg, a printed circuit board), and And the contacts of the device must be electrically connected to the conductive features of the board.

Semiconductor wafers are typically provided in a package that facilitates processing of the wafer during fabrication and during installation of the wafer on an external substrate (eg, a circuit board or other circuit board). For example, many semiconductor wafers are provided in packages that are suitable for surface mounting. A large number of such general-purpose types of packages have been proposed for use in a variety of applications. Most commonly, such packages include a dielectric component, commonly referred to as a "chip carrier," on which a plurality of terminations are formed as an electroplated or etched metal structure. Such terminals are typically connected to the wafer itself by feature elements (eg, thin lines extending along the wafer carrier itself) and by fine wires extending between the contacts of the wafer and the terminals or lines contact. In a surface mount operation, the package is placed on a circuit board such that each terminal on the package is aligned with a corresponding contact pad on the circuit board. Solder or other solder material is provided between the terminals and the contact pads. The package is permanently soldered to the correct place by heating the assembly to melt or "reflow" the solder or activate the solder material.

Many packages contain solder bumps in the form of solder balls, typically about 0.1 mm in diameter and about 0.8 mm (5 mils and 30 mils), which are attached to the terminals of the package. A package having an array of solder balls protruding from its bottom surface is commonly referred to as a ball grid array or a "BGA (Ball Grid Array)" package. Other packages, referred to as platform grid arrays or "LGA (Land Grid Array)" packages, are secured to the substrate by a thin layer or platform formed by solder. This type of package can be quite streamlined. A particular package, commonly referred to as a "wafer level package," occupies an area of the board that is equal to or slightly larger than the area of the device incorporated in the package. The advantage is that it reduces the overall size of the assembly and allows for the use of short interconnects between the various devices on the substrate, which in turn limits the signal propagation time between the devices and thus facilitates high speed operation of the assembly.

Packaged semiconductor wafers are often provided in a "stacked" arrangement, wherein, for example, one package is provided on a circuit board and the other package is mounted on the top end of the first package. Such an arrangement enables several different wafers to be mounted within a single footprint on a circuit board and can further aid in high speed operation by providing short interconnects between the packages. Often, this interconnection distance is only slightly larger than the thickness of the wafer itself. To achieve interconnection within a chip package stack, a structure for mechanical and electrical connections must be provided on both sides of each package (except for the topmost package). For example, this can be achieved by providing contact pads or platforms on both sides of the substrate on which the wafer is mounted, the contact pads being connected through the substrate by conductor vias or the like. Solder balls or the like have been used to bridge the gap between the contacts at the top of a lower substrate to the contacts at the bottom of the next higher substrate. The solder balls must be higher than the height of the wafer in order to connect the contacts. An example of a stacked wafer arrangement and a hull structure is provided in U.S. Patent Application Publication No. 2010/0232129 ("the '129 publication"), the disclosure of which is incorporated herein in its entirety.

Microelectronic components in the form of elongated poles or pins can be used to connect the microelectronic package to the board and for other connections in the microelectronic package. In some examples, the micro contacts are formed by etching a metal structure comprising one or more metal layers for forming the micro contacts. The etching process limits the size of the micro contacts. Conventional etching processes typically do not form microcontacts of large height to maximum width ratio (referred to herein as "aspect ratio"). It is difficult, if not impossible, to form a micro-contact array with a significant height and ultra-small spacing or spacing between adjacent micro-contacts. Moreover, the configuration of the micro contacts formed by the conventional etching process is also limited.

All of the above descriptions have progressed in the art; however, the present invention remains It is desirable to make further improvements in manufacturing and testing microelectronic packages.

Described herein are microelectronic components and a method of fabricating microelectronic components.

In one embodiment, a method of forming a plurality of bonding wires connected to a substrate can include: positioning at least one of: a soldering fixture and a portion of a wire extending downwardly beyond a side thereof; or, relative to One surface is positioned to each other such that an end of the wire portion extending downward beyond one of the faces of the welding jig is positioned such that it is spaced apart from the surface of the welding jig by a depth greater than a depth from the forming surface. The wire portion may be a first wire portion, and the extension of the first wire portion may be performed by welding a second portion of the wire to a second welding surface, and then moving the welding fixture surface to the first a greater height above the plane where the welding surface is located, such that the first wire portion can extend outward beyond the face of the welding fixture, and then the wire is severed to separate the first wire portion from the first Two wire parts. The step of cutting the wire may include clamping the wire and tightening the wire of the clamp to cause the wire of the clamp to break at a boundary between the first wire portion and the second wire portion . The step of cutting the wire may include clamping the wire and tightening the wire of the clamp to cause the wire of the clamp to break between the first wire portion and the second wire portion at a preset Breaking at a length; and/or may include a clamp and tensioning the plurality of wires to cause the clamped wires to break at a plurality of different predetermined lengths.

The welding jig can be moved along the first forming surface in a first direction parallel to the face of the welding jig to bend the wire portion toward the welding jig. The welding table is used when the step of using the welding jig is performed to weld the casting surface to the welding surface The face is exposed at a surface of a substrate. A microelectronic component can be mounted to and electrically interconnected to the substrate such that the microelectronic component is electrically interconnected with at least a portion of the bond wires.

The first forming surface may include a groove, and the step of moving the welding jig along the first forming surface may include moving the welding jig surface in the first direction along a length of the groove, such that At least a portion of the wire portion moves within the groove. The first forming surface can be a surface of an forming element having an opening therein, and the positioning step can include positioning the welding fixture such that the wire portion extends at least partially into the opening. The opening may include a tapered portion adjacent the first forming surface, and the tapered portion may be configured to guide the wire portion toward a predetermined position of the first forming surface. The first forming surface may be a surface of an forming element having an opening therein. The positioning step can include positioning the welding fixture such that the wire portion extends at least partially into the opening. The opening may include a tapered portion adjacent the first forming surface, and the tapered portion may be configured to guide the wire portion into the groove.

The step of moving the welding fixture can include moving the welding fixture into the opening such that the wire portion extends at least partially into the opening. The casting surface can be placed inside the opening. The casting surface can include a groove having a depth that is less than the diameter of the wire portion. The opening can be a first opening and the forming element includes a second opening. The step of moving the welding fixture can include moving the welding fixture into the second opening such that the wire portion extends at least partially into the second opening. The casting surface can be disposed within the second opening.

One of the plurality of bonding wires can be adapted to carry a first signal potential, and one of the bonding wires can be adapted to simultaneously carry a different The second signal potential at the first signal potential. At least two of the wire bonds can be welded to a single one of the plurality of weld surfaces. This can improve the tolerance of the free ends of the wire bonds. For example, in the disclosed embodiment, the free ends of the bonding wires may be spaced apart from each other by 150 micrometers, 200 micrometers, 300 micrometers, or 400 micrometers, and may be in a Cartesian coordinate system. There are different x or y directions in ). The free ends of the wire bonds may have a pitch of 150 or 200, and for a free end less than +/- 25 microns, there may be a tolerance of 3 sigma codes, i.e., three standard deviations from the center of the distribution.

The welding jig can then be moved in a second direction transverse to the surface of the welding jig such that the bare wall of the welding jig extending away from the welding jig surface faces away from the first forming surface Two form a surface. The first forming surface and the second forming surface may be disposed at a forming station, and the step of moving the welding jig in the first and second directions may be performed at the forming station. The second forming surface may be inclined away from the first forming surface at a first angle to the first forming surface, and the bare welding fixture wall may be inclined away from the welding jig surface by the first angle. The second forming surface may be a channel that is recessed relative to the at least one third surface. The step of using the welding jig can be carried out at a welding station. The welding fixture can be supported by a welding head and the welding head and the supported welding fixture are moved from the forming station to the welding station before casting a portion of the wire portion. The wire portion can be bent toward the exposed wall of the welding fixture.

A portion of the wire portion between the weld fixture face and a casting surface can be cast. The casting surface can be disposed at the forming station, and the step of casting a portion of the wire portion between the welding jig face and the casting surface can be performed at the forming station. The step of using the welding jig is performed to weld the wire portion to the welding surface The cast portion can prevent movement in the lateral direction. The cast portion of the wire portion may have a flat surface, and the step of using the welding jig may weld the flat surface of the cast portion to the soldering surface, and a permanent plastic knot may be placed in the wire . The cast portion of the wire portion may have a patterned surface comprised of a raised feature and a recessed feature, and the step of using the weld fixture may weld the patterned face of the cast portion to the weld surface .

The welding fixture can be used to weld the cast portion of the wire portion to a conductive soldering surface of the substrate to form a bond wire while leaving the end of the wire portion remote from the cast portion unwelded. The welding fixture can have a capillary that extends out of the capillary and the face of the welding fixture can be the face of the capillary. The welding fixture can be an ultrasonic welding fixture, the wire portion extending out of the ultrasonic welding fixture and the surface of the ultrasonic welding fixture can be the surface of the welding fixture. The ultrasonic welding jig and the forming surfaces can be assembled with a common welding head. These steps may be repeated to form a plurality of the plurality of bonding wires to at least one of the soldering surfaces.

After forming the plurality of bond wires, an encapsulation layer can be formed overlying the one or more soldering surfaces. The encapsulation layer can be formed to at least partially cover the soldering surface and the bonding wires. An unencapsulated portion of each of the bonding wires may be defined by an end surface of the bonding wire or a portion of at least one of the edge surfaces of the bonding wire not covered by the encapsulating layer.

A microelectronic package can include a component, such as a substrate having a first surface and a second surface opposite the first surface. The first surface of the member may have a first zone and a second zone. The microelectronic component can be stacked over the first region. The conductive The component may be exposed in the second zone at at least one of the first surface or the second surface of the member. The encapsulation layer can be stacked over at least the second region of the member. The unencapsulated portions of the bonding wires may include the ends of the bonding wires. One of the plurality of bonding wires may be configured to carry a first signal potential and a second one of the bonding wires may be configured to be synchronously carried by a different one than the first The second signal potential of the signal potential. Each of the bonding wires may have an edge surface extending longitudinally to the end of the bonding wire, and the unencapsulated portions of the bonding wires may be covered by the ends of the bonding wires and not covered by the encapsulating layer adjacent to the ends Part of the edge surface is defined. The unencapsulated portion of at least one of the bonding wires may be stacked over a major surface of the microelectronic component. One end of at least one of the bonding wires may be offset from the substrate by at least a distance in a direction parallel to the first surface of the substrate, which is equal to between adjacent ones of the plurality of conductor elements Minimum spacing and one of 100 microns. At least one of the wire bonds can include at least one bend between a conductor element that is not bonded to the at least one wire bond. The bend of the at least one bond wire is away from the conductor element that is not bonded by the encapsulated portion and the at least one bond wire. The unencapsulated portion of the at least one bond wire may be stacked over a major surface of the microelectronic component. The bonding wires may be bonded to the conductor elements at a plurality of locations in the first pattern, the first pattern having a first minimum spacing between adjacent ones of the conductor elements. The unencapsulated portions of the bonding wires may be disposed at a plurality of locations in a second pattern, the second pattern having a second minimum spacing between adjacent portions of the plurality of bonding wires that are not encapsulated portions. The second minimum spacing can be greater than the first minimum spacing. The at least one microelectronic component can include a first microelectronic component and a second microelectronic component stacked over the first surface in the first region. At least a portion of the plurality of conductor elements can electrically connect the first microelectronic element. At least a portion of the conductor elements can be electrically connected to the second Microelectronic components. The first microelectronic component and the second microelectronic component can be electrically connected to each other within the microelectronic package. At least one of the first conductor elements can engage at least two of the plurality of bond wires.

At least one microelectronic component can be stacked over the first surface. A plurality of electrically conductive elements may be exposed at at least one of the first surface or the second surface of the substrate. At least a portion of the plurality of conductor elements can electrically connect the at least one microelectronic element. The plurality of wire bonds can each have a cast portion that is bonded to one of the conductor elements. An uncast portion may extend away from the cast portion in the longitudinal direction. A transition portion may connect the uncast portions and the cast portions. The width of the cast portion in the transverse direction transverse to the longitudinal direction may be greater than the width of the uncast portion. The width of the transition portion may be reduced as it approaches the uncast portion. The wire bonds may have a cast portion remote from the individual wire bonds and an end of the member. An encapsulation layer may extend from at least one of the first surface or the second surface and may cover a portion of the bonding wires such that the covered portions of the bonding wires are mutually sealed by the encapsulating layer Separation. The unencapsulated portions of the wire bonds may be defined by portions of the wire bonds that are not covered by the encapsulation layer. At least a portion of the uncast portions may have a cylindrical shape. The ends of at least a portion of the wire bonds may not be covered by the encapsulation layer.

A microelectronic package in accordance with one aspect of the present invention includes a member having a surface and a plurality of conductor elements positioned at the surface. The plurality of bond wires may have a first end joined to the conductor elements and a second end remote from the first ends, the wire wires having a length between their respective first and second ends. A hardened layer overlies the surface and covers a first portion of the length of each bond wire. An encapsulation layer is placed on the member The hardened layer on the surface is over and covers a second portion of the length of each wire. The second ends of the bonding wires may be at least partially not covered by the encapsulating layer on the hardened layer and at a surface of the encapsulating layer away from the hardened layer.

According to one or more aspects of the invention, the component is a substrate. The microelectronic package can further include a raised region of material that at least partially abuts the hardened layer in at least one direction parallel to a surface of the member.

According to one or more aspects of the present invention, the hardened layer covers at least 10% of the length of the wire bonds. In a particular aspect, the hardened layer covers at least 50 microns of the length of the bond wires.

In accordance with one or more aspects of the present invention, each wire bond is tailor welded to one of the conductor elements.

In accordance with one or more aspects of the present invention, the weld lines have weld fixture marks adjacent to the second ends of the weld lines.

In accordance with one or more aspects of the present invention, the welding fixture indicia will be a spherical region.

In accordance with one or more aspects of the present invention, the wire bonds may be tapered in at least one of the directions adjacent the second ends of the wire bonds.

In accordance with one or more aspects of the present invention, the second ends of the wires may protrude away from the encapsulation layer at an angle of 65 to 90 degrees from a plane defined by the surface of the encapsulation layer.

In accordance with one aspect of the invention, a method of forming a microelectronic package includes forming a plurality of bond wires each having a first end that is soldered to a conductor element of a plurality of conductor elements at a surface of a component. The wire bonds will have a second end away from the first ends The ends are between their respective first and second ends. A first layer will be formed overlying the surface of the member and covering a first portion of the length of each bond wire. A second layer is formed overlying the first layer over the surface of the member and covering a second portion of the length of each bond wire. The second ends of the bonding wires can be uncovered by the second layer, wherein the second ends are at a surface of the second layer above the first layer and away from the first layer. The first layer is capable of inhibiting movement of the second ends of the plurality of bonding wires during formation of the second layer.

According to one or more particular aspects of the invention, the first layer and the second layer will have different material properties. Forming the first layer will include curing the first layer, and wherein forming the second layer will occur after forming the first layer.

In accordance with one or more particular aspects of the present invention, the first layer will be a hardened layer and the second layer will be an encapsulating layer.

In accordance with one or more particular aspects of the present invention, the method can further include providing a raised region prior to forming the first layer. In this case, the raised region may contain at least a portion of the material of the first layer in at least one direction parallel to the surface of the member.

According to one or more particular aspects of the present invention, the method may further include interposing the bonding wires in a removable film prior to forming the material of the second layer in the second layer, and Including the removal of the removable film. In accordance with one or more aspects of the present invention, the removable film inhibits the second material from covering the second ends of the wire bonds.

These and other embodiments of the present disclosure are more fully described below.

10‧‧‧Microelectronic components

12‧‧‧Substrate

14‧‧‧ first surface

16‧‧‧ second surface

18‧‧‧First District

20‧‧‧Second District

22‧‧‧Microelectronic components

24‧‧‧welding line

28‧‧‧Conductor components

30‧‧‧ touch pads

32‧‧‧welding line

34‧‧‧Base

End of 36‧‧‧

37‧‧‧Edge surface

38‧‧‧End surface

39‧‧‧Unenclosed part

40‧‧‧Second conductor element

41‧‧‧through hole

42‧‧‧encapsulated layer

43‧‧‧Second conductor element

43D‧‧‧Second conductor element

44‧‧‧ main surface

45‧‧‧ touch pads

48‧‧‧Second conductor element

49‧‧‧ openings

110‧‧‧Microelectronic components

112‧‧‧Substrate

114‧‧‧ first surface

116‧‧‧ second surface

118‧‧‧First District

122‧‧‧Microelectronic components

126‧‧‧ solder bumps

128‧‧‧Conductor components

132‧‧‧welding line

132A‧‧‧welding line

132B‧‧‧welding line

134‧‧‧Base

134A‧‧‧Base

134B‧‧‧Base

End of 136‧‧

138‧‧‧End surface

End of 138A‧‧

138B‧‧‧ end

139‧‧‧Unencapsulated part

144‧‧‧ surface

146‧‧‧ angle

210‧‧‧Microelectronic components

232‧‧‧welding line

234‧‧‧Base

End of 236‧‧

End of 238‧‧‧

248‧‧‧Bend section

310‧‧‧Microelectronic components

312‧‧‧Substrate

322‧‧‧Microelectronic components

324‧‧‧ wire

325‧‧‧ positive

328B‧‧‧Contacts

332A‧‧‧welding line

332B‧‧‧welding line

332Ci‧‧‧welding line

332Cii‧‧‧bonding wire

332D‧‧‧welding line

334A‧‧‧Base

334B‧‧‧Base

334Ci‧‧‧Base

334Cii‧‧‧Base

334D‧‧‧Base

End of 336A‧‧

End of 336B‧‧

336Ci‧‧‧ end

336Cii‧‧‧ end

336D‧‧‧ end

337A‧‧‧Edge surface

337D‧‧‧Edge surface

338A‧‧‧ end surface

342‧‧‧encapsulated layer

344‧‧‧ surface

345‧‧‧ recessed surface

347‧‧‧ side surface

348B‧‧‧Bend section

348C‧‧‧Bend section

350‧‧‧Microelectronic components

380‧‧‧ wire

382‧‧‧Wire

384‧‧‧welding line

386‧‧‧ contact surface

410‧‧‧Microelectronic components

412‧‧‧Substrate

414‧‧‧ first surface

421‧‧‧Insulation

422‧‧‧Microelectronic components

424‧‧‧Main surface

425‧‧‧ positive

426‧‧‧Back surface

428‧‧‧Conductor components

432‧‧‧welding line

434‧‧‧Base

End of 436‧‧

438‧‧‧End surface

448‧‧‧Bend section

452‧‧‧ solder mass

488‧‧‧Microelectronic components

489‧‧‧Microelectronic components

490‧‧‧Printed circuit board (PCB)

492‧‧‧Contacts

510‧‧‧Microelectronic components

512‧‧‧Substrate

513‧‧‧Wire

515‧‧‧ wire holder

518‧‧‧First District

520‧‧‧Second District

524‧‧‧welding line

528‧‧‧Conductor components

532‧‧‧welding line

534‧‧‧Base

End of 538‧‧‧

542‧‧‧Encapsulation layer

544‧‧‧ surface

610A‧‧‧ package

610B‧‧‧ package

620‧‧‧ underfill layer

632‧‧‧welding line

642‧‧‧ surface

644‧‧‧ surface

652‧‧‧ solder mass

690‧‧‧Circuit paneling

692‧‧‧ first surface

712‧‧‧Substrate

728‧‧‧Conductor components

730‧‧‧ surface

731‧‧‧ core

732A‧‧‧welding line

732B‧‧‧welding line

732D‧‧‧welding line

732F‧‧‧welding line

733‧‧‧Metal polishing paint

736‧‧‧Upward extension

End of 738A‧‧‧

End of 738B‧‧‧

738D‧‧‧spherical part

739‧‧‧Unencapsulated part

740‧‧‧ centroid

741‧‧‧ radial direction

744‧‧‧diameter

746‧‧‧diameter

750‧‧‧ angle

751‧‧‧encapsulated layer

752‧‧‧ surface

800‧‧‧ Shaped wire section

801‧‧‧ Direction

802‧‧‧Preset length

803‧‧‧Deep (Fig. 14A)

803‧‧‧Clamps (Fig. 32B)

804‧‧‧ welding fixture

805‧‧‧Cut cutting blade

806‧‧‧Capillary surface

807‧‧‧ openings

808‧‧‧ openings

809‧‧‧Laser

810‧‧‧ forming components

811‧‧‧ trench

812‧‧‧ surface

813‧‧‧ second surface

814‧‧‧First direction

815‧‧‧ trench

816‧‧‧ inner surface

817‧‧‧second direction

818‧‧‧ directions

819‧‧‧channels or trenches

820‧‧‧Capillary exposed wall

821‧‧‧External framework

823‧‧‧ Forming the surface (Fig. 14A)

823‧‧‧ cavity (Fig. 34C)

824‧‧‧Template unit

825‧‧‧ part of the wire part

826‧‧‧ upper surface

827‧‧‧ part of the wire part

828‧‧‧ holes

829‧‧‧ edge

830‧‧‧First opening or recess

Part of the 831‧‧‧ wire section

832‧‧‧ tapered parts, channels, or grooves

833‧‧‧flat surface

834‧‧‧channels or trenches

End of 838‧‧‧

840‧‧‧ openings or recesses

844‧‧‧welding head

850‧‧‧ forming components

851‧‧‧ edge

852‧‧‧ dent

854‧‧‧thin section or passage

855‧‧‧Width

860‧‧‧First surface formation

Edge of 861‧‧

862‧‧‧ First area forming the surface

864‧‧‧Second forming surface

865‧‧‧ angle

866‧‧‧second depression

867‧‧‧ angle

868‧‧‧Bare wall

870‧‧‧ casting surface

880‧‧‧ forming station

882‧‧‧welding station

884‧‧‧ components

932‧‧‧welding line

Around 933‧‧

934‧‧‧Base

End of 938‧‧

1010‧‧‧ forming unit

1014A‧‧‧ transverse direction

1016‧‧‧ Direction

1018‧‧‧ third surface

1020‧‧‧ outer surface

1022‧‧‧ part of the base

Part of the 1022A‧‧‧ welding line

1024‧‧‧ third surface

1026‧‧‧Upward projection of the wire

1034‧‧‧Base

1036‧‧‧Upward protruding part of the wire

End of 1038‧‧

1048‧‧‧ part of the wire

1102‧‧‧ Temporary film

1110‧‧‧Mold plate

1111‧‧‧Mold plate

1112‧‧‧ cavity

1132‧‧‧welding line

End of 1138‧‧

1142‧‧‧encapsulated layer

1144‧‧‧Mold surface

1178‧‧‧Sacrificial material layer

Package produced by 1210‧‧‧

1212‧‧‧Substrate

1222‧‧‧Microelectronic components

1223‧‧‧Microelectronic components

1228‧‧‧Conductor components

1232‧‧‧welding line

1232'‧‧‧welding wire loop

1232A‧‧‧Connected wire

1232B‧‧‧Hot Dissipation Solder Joint

1234A‧‧‧Base

End of 1234B‧‧

End of 1238‧‧

1242‧‧‧encapsulated layer

1244‧‧‧ surface

1246‧‧‧Fixed encapsulation surface

1302‧‧‧welding line

1304‧‧‧Substrate

1306‧‧‧Wire

End section 1306e‧‧‧

1308‧‧‧Base

1310‧‧‧Uplifted material area

1312‧‧‧

1314‧‧‧ hardened layer

1316‧‧‧Removable membrane

1318‧‧‧Mold casting compounds or other encapsulants

1328‧‧‧Conductor components

1332‧‧‧welding line

1334‧‧‧welding line

1337‧‧‧Edge surface

1338‧‧‧Base

1372‧‧‧ solder balls

1372'‧‧‧ solder balls

1373'‧‧‧ solder balls

1428‧‧‧Conductor components

1432‧‧‧welding line

1439‧‧‧ naked part

1442‧‧‧encapsulated layer

1444‧‧‧ surface

1512‧‧‧Substrate

1514‧‧‧ surface

1522‧‧‧Microelectronic components

1528‧‧‧Conductor components

1532‧‧‧welding line

1532A‧‧‧nail head bump

1532B‧‧‧nail head bump

1534‧‧‧Base

1537‧‧‧Edge surface

1538‧‧‧End surface

1539‧‧‧Unencapsulated part

1542‧‧‧encapsulated layer

1543‧‧‧Contacts

1544‧‧‧Main surface

1545‧‧‧ minor surface

1552‧‧‧Conductor mass

1588‧‧‧Microelectronics package

1612‧‧‧Substrate

1614‧‧‧ surface

1622‧‧‧Microelectronic components

1628‧‧‧Conductor components

1650‧‧‧Microelectronic components

1688‧‧‧welding line

1712‧‧‧Substrate

1714‧‧‧ surface

1722‧‧‧Microelectronic components

1726‧‧‧Contacts

1728‧‧‧Conductor components

1750‧‧‧Microelectronic components

1788‧‧‧welding line

1804‧‧‧Welding fixture

1810‧‧‧ Forming components

1812‧‧‧Substrate

1814‧‧‧ surface

1822‧‧‧Microelectronic components

1828‧‧‧Conductor components

1844‧‧‧welding head

1884‧‧‧ components

1850‧‧‧Microelectronic components

1910A‧‧‧Package

1910B‧‧‧Package

1916‧‧‧ surface

1942‧‧‧encapsulated layer

1944‧‧‧ surface

1947‧‧‧Edge surface

1949‧‧‧Drip coating area

2010A‧‧‧Microelectronics Packaging

2010B‧‧Microelectronics package

2016‧‧‧Surface

2032‧‧‧welding line

2038‧‧‧End surface

2039‧‧‧Unencapsulated part

2043‧‧‧ Terminal

2044‧‧‧ surface

2052‧‧‧Conductor mass

2099‧‧‧Chassis

2110A‧‧‧Microelectronics package

2110B‧‧‧Microelectronics package

2112‧‧‧Substrate

2132‧‧‧welding line

2142‧‧‧Encapsulation layer

2144‧‧‧Main surface

2145‧‧‧ minor surface

2151‧‧‧Aligned surface

2210A‧‧‧Package

2212‧‧‧Substrate

2214‧‧‧ surface

2222‧‧‧Microelectronic components

2223‧‧‧Surface

2232‧‧‧welding line

2244‧‧‧ inner surface

2245‧‧‧Outer surface

2251‧‧‧Aligned surface

2252‧‧‧ solder balls

2610‧‧‧Package

2610"‧‧‧ in units

2612‧‧‧Substrate

2614‧‧‧ surface

2618‧‧‧First District

2620‧‧‧Second District

2622‧‧‧Microelectronic components

2628‧‧‧Conductor components

2632‧‧‧welding line

2634‧‧‧Base

2637‧‧‧Edge surface

2642‧‧‧Encapsulation layer

2644‧‧‧Surface

2652‧‧‧ solder balls

2677‧‧‧ surface

2677'‧‧‧ Sacrificial Sealing Layer

2678‧‧‧ Sacrificial Sealing Layer

2679‧‧‧ openings

2800‧‧‧Wire segment

2804‧‧‧Capillary

2806‧‧‧Capillary surface

2810‧‧‧Forming fixtures

2820‧‧‧ side wall

2822‧‧‧First wire section

3800‧‧‧Wire segment

3804‧‧‧Capillary

3806‧‧‧Capillary surface

3808‧‧‧ Surface

3812‧‧‧ surface

3816‧‧‧Form surface

3820‧‧‧ side wall

The first part of the 3822‧‧‧ wire segment

1 is a cross-sectional view of a microelectronic package in accordance with an embodiment of the present invention; FIG. 2 is a top plan view of the microelectronic package of FIG. 1; and FIG. 3 is implemented in accordance with FIG. FIG. 4 is a cross-sectional view of the microelectronic package according to a variation of the embodiment shown in FIG. 1; FIG. 5A is shown in FIG. A cross-sectional view of a microelectronic package of a variation of an embodiment; FIG. 5B is a fragmentary cross-sectional view of a conductor element formed on an unencapsulated portion of a wire according to an embodiment of the present invention; 5C is a fragmentary cross-sectional view of a conductor element formed on an unencapsulated portion of a wire according to a variation of the embodiment shown in FIG. 5B; FIG. 5D is according to FIG. 5B A fragmentary cross-sectional view of a conductor element formed on an unencapsulated portion of a bond wire of the variation of the illustrated embodiment; a cross-sectional view of the microelectronic assembly shown in FIG. Microelectronic package of one or more of the embodiments and an additional microelectronic package and It is electrically connected to the circuit board; FIG. 7 is a top view of the microelectronic package according to an embodiment of the invention; FIG. 8 further shows a top view of the chip of the microelectronic package according to an embodiment of the invention; A top view of a microelectronic package including a leadframe type substrate in accordance with an embodiment of the present invention; and a corresponding cross-sectional view of the microelectronic package shown in FIG. Figure 11 is a cross-sectional view of a microelectronic assembly according to a variation of the embodiment shown in Figure 6, comprising a plurality of microelectronic packages electrically connected together and reinforced with an underfill layer; 12 is a photographic image of a component having a solder joint between a bond wire of a first component and a solder mass of a second component attached thereto; FIG. 13A is a FIG. 13B is a fragmentary cross-sectional view of a wire through hole in a microelectronic package in accordance with an embodiment of the present invention; FIG. 13C is a cross-sectional view of a wire through hole in a microelectronic package; An enlarged fragmentary cross-sectional view of a wire via in a microelectronic package in accordance with the embodiment shown in FIG. 13B; and FIG. 13D is a wire via in a microelectronic package in accordance with an embodiment of the present invention. FIG. 13E is an enlarged fragmentary cross-sectional view of a wire through hole in a microelectronic package according to the embodiment shown in FIG. 13D; FIG. 13F is an embodiment according to an embodiment of the present invention. Sectional cross-section of a wire through hole in a microelectronic package; Figure 13C An enlarged fragmentary cross-sectional view of a wire through hole in a microelectronic package according to the embodiment shown in FIG. 13B; FIG. 14A is a view of welding a metal wire segment to a conductor element according to an embodiment of the present invention. a plurality of stages in the method of forming the wire section before; a portion of the shaped wire at a location below the capillary face shown in Figure 14B FIG. 14C is a cross-sectional view of the portion of the shaped wire between the capillary face and the casting surface; FIG. 15 further shows the method as shown in FIG. 14 and is suitable for use in the method. A forming unit; FIGS. 16A to 16D are plan views showing the movement of a welding jig relative to a forming member during shaping of a wire portion according to an embodiment of the present invention; FIG. 16E is a view according to the present invention. FIG. 17A, 17B, and 17C are views seen from above a wire bond assembly, further illustrating shaping a wire portion and welding the shaped wire portion in accordance with an embodiment of the present invention. FIGS. 18A, 18B, and 18C are views seen from above a wire bond assembly, further illustrating a process for shaping a wire portion and soldering the shaped wire portion in accordance with an embodiment of the present invention; A plurality of stages in a method of forming a wire section prior to welding a metal wire segment to a conductor component in accordance with an embodiment of the present invention; the system illustrated in Figures 20A and 20B A cross-sectional view of one of the steps of forming an encapsulation layer of a microelectronic package and another subsequent step in accordance with an embodiment of the present invention; and FIG. 20C further shows an enlarged cross-sectional view corresponding to the stage of FIG. FIG. 21A is a cross-sectional view showing a stage of fabricating an encapsulation layer of a microelectronic package according to an embodiment of the present invention; and FIG. 21B is a step of fabricating a microelectronic package according to the stage shown in FIG. 21A. One pack A cross-sectional view of a layer of a layer; a method of forming an encapsulation layer by die casting as shown in FIGS. 22A to 22E, wherein an unencapsulated portion of the bonding wire protrudes through the encapsulation layer; FIG. 23A 23B is a sectional view of a wire according to another embodiment; FIGS. 24A and 24B are cross-sectional views of a microelectronic package according to a further embodiment; and FIGS. 25A and 25B are further implemented according to FIG. 26 is a cross-sectional view of a microelectronic package according to another embodiment; and FIGS. 27A to C are cross-sectional views showing an example of a microelectronic package according to a further embodiment. 28A-D are various embodiments of a microelectronic package during the steps of forming a microelectronic assembly in accordance with an embodiment of the present disclosure; FIG. 29 is shown in accordance with an embodiment of the present disclosure. Another embodiment of a microelectronic package during the step of forming a microelectronic component; and FIGS. 30A-C illustrate a microelectronic package during the step of forming a microelectronic component in accordance with another embodiment of the present disclosure Various embodiments; shown in Figures 31A-C Various embodiments of a microelectronic package during the steps of forming a microelectronic assembly in accordance with another embodiment of the present disclosure; a portion of a machine illustrated in Figures 32A and 32B that is capable of Various stages of the method of an embodiment are used to form various wire pass through holes; a portion of a machine shown in Figure 33 that can be used to form various methods in a method in accordance with another embodiment of the present disclosure Wire bond through hole; a portion of an apparatus shown in Figures 34A-C that can be used in accordance with the present disclosure In one embodiment of the method for manufacturing a wire bond; Figure 35 is a portion of a machine that can be used to form various wire bonds in various stages of a method in accordance with another embodiment of the present disclosure. Hole; Figure 36 is a portion of a machine that can be used to form various wire pass through holes in various stages of a method in accordance with another embodiment of the present disclosure; Figures 37A through D are based on A cross-sectional view of various stages of fabricating a microelectronic package in accordance with an embodiment of the present disclosure; and FIGS. 38A and 38B are cross-sectional views of various stages of fabricating a microelectronic package in accordance with another embodiment of the present disclosure; 39A through C are cross-sectional views of various stages of fabricating a microelectronic package in accordance with another embodiment of the present disclosure.

Referring now to the drawings in which like reference numerals are The embodiment of Figure 1 is a microelectronic assembly in the form of a packaged microelectronic component, such as a semiconductor wafer component for use in a computer or other electronic application.

The microelectronic assembly 10 of FIG. 1 includes a substrate 12 having a first surface 14 and a second surface 16. Substrate 12 typically has the form of a dielectric element that is substantially planar. The dielectric element can be a thin sheet and can be very thin. In a particular embodiment, the dielectric component may comprise one or more layers of an organic dielectric material or a synthetic dielectric material, such as, but not limited to, polyamine, polytetrafluoroethylene (PolyTetraFluoroEthylene, PTFE). ), epoxy resin, epoxy resin glass, FR-4, BT resin, thermoplastic plastic material, or thermosetting plastic material. The base The board can be a substrate having a package for further electrically interconnecting a terminal of a circuit board (for example, a circuit board). Alternatively, the substrate will be a circuit board or circuit board. In one example, the substrate is a module board of a dual-inline memory module (DIMM). In yet another variation, the substrate may be a microelectronic component, for example, or may comprise a semiconductor wafer having a plurality of active devices, for example, in the form of an integrated circuit or other form.

The first surface 14 and the second surface 16 are preferably substantially parallel to each other and separated by a distance perpendicular to the surfaces 14, 16 for defining the thickness of the substrate 12. The thickness of the substrate 12 is preferably within the range of substantially acceptable thicknesses of the present application. In one embodiment, the distance between the first surface 14 and the second surface 16 is between about 25 and 500 [mu]m. For the purposes of this discussion, the first surface 14 can be described as being positioned opposite or away from the second surface 16. This description and any other description of the relative positions of such elements in the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;

In a preferred embodiment, substrate 12 is considered to be divided into a first zone 18 and a second zone 20. The first zone 18 falls within the second zone 20 and contains a central portion of the substrate 12 and extends outward therefrom. The second zone 20 substantially surrounds the first zone 18 and extends therefrom to the outer edge of the substrate 12. In this embodiment, the substrate itself physically separates the two regions, although there are no clear features; however, for the purposes discussed herein, for the application to the regions or the processing or feature elements contained therein These areas are unmarked.

A microelectronic component 22 is mounted to the first surface 14 of the substrate 12 within the first region 18. The microelectronic component 22 will be a semiconductor wafer or another comparable device. In the picture In the embodiment of Fig. 1, the microelectronic component 22 is mounted to the first surface 14 in a manner known as "faith-up". In this embodiment, the bond wires 24 are used to electrically connect the microelectronic component 22 to a portion of the plurality of conductor elements 28 exposed at the first surface 14. The bond wires 24 are also bonded to wires (not shown) or other conductor features within the substrate 12, which are then connected to the conductor members 28.

Conductor element 28 includes individual "contacts" or contact pads 30 that are exposed at first surface 14 of substrate 12. As used in this specification, when a conductive element is described as being "exposed" at the surface of another element having a dielectric structure, it is meant that the conductive structure can be used to contact the surface perpendicular to the dielectric structure. A theoretical point in the direction that moves from the outside of the dielectric structure toward the surface of the dielectric structure. Thus, a terminal or other conductor element exposed at a surface of a dielectric structure may protrude from the surface, may be flush with the surface, or may be recessed relative to the surface and via one of the dielectrics The hole or the recess is exposed. The conductor elements 28 are flat, thin components in which the contact pads 30 are exposed at the first surface 14 of the substrate 12. In one embodiment, the conductor elements 28 will be substantially circular and interconnected with one another and interconnected to the microelectronic element 22 by circuitry (not shown). Conductor element 28 will be formed at least within second region 20 of substrate 12. In addition to this, in a particular embodiment, conductor elements 28 are also formed in first region 18. This arrangement is particularly useful when the microelectronic component 122 (FIG. 3) is mounted to the substrate 112 in a so-called "flip-chip" configuration in which the contacts on the microelectronic component 122 are positioned by the microelectronic component. Solder bumps 126 or the like underneath 122 are connected to conductor elements 128 inside first region 118. In one embodiment, the conductor element 28 is formed from a solid metallic material, such as copper, gold, nickel, or other materials acceptable for this application (which includes various alloys including one or more of the following: copper , gold, nickel, or a combination thereof).

At least a portion of the plurality of conductor elements 28 may be interconnected to corresponding second conductor elements 40, such as conductor pads, exposed at the second surface 16 of the substrate 12. This interconnection can be accomplished using vias 41 formed in the substrate 12, which can be lined or filled with a conductor metal of the same material as conductor elements 28 and 40. The conductor elements 40 can be further interconnected by wires on the substrate 12, as appropriate.

The microelectronic assembly 10 further includes a plurality of bond wires 32 that are bonded to at least a portion of the conductor elements 28, for example, to be bonded to their contact pads 30. In some examples, bond wire 32 may be formed from a wire, such as copper or copper alloy, gold, aluminum, or a basic wire metal (for example, copper, copper alloy, gold, or aluminum) and A combination of a metallic paint polish or coating layer made of a different metal (in some cases it may be gold or palladium). In some cases, the wire may have a diameter of 10 microns and above; in a more specific example, it may be 17 microns, 25 microns or larger, for example 35 microns or 50 microns. When the microelectronic assembly 10 requires a large number of interconnect lines or an input or output connection line is connected to the microelectronic assembly, for example, there may be between 1000 and 2000 bond wires 32.

The bond wire 32 is soldered to the conductor element 28 along a portion of its edge surface 37. Examples of such welding include tailor welding, wedge welding, and the like. As will be explained in further detail below, a wire bonding jig will be used to tailor a wire segment extending from a capillary of the wire bonding fixture to a wire segment of a conductor member 28 while being supplied from the wire in the capillary. Cut the tailored end of the wire. The wire bonding jig may leave a mark (not shown) caused by the process of forming the bonding wire near the tips of the bonding wires 32. The indicia can result in a tapered region of the wire and/or can have any geometric shape (including spheres).

The wire bonds are welded to the conductors at their respective "substrate" 34 Element 28. Hereinafter, the "base" of the welded wire 32 is referred to as a portion of the wire which forms a joint with the conductor member 28. Alternatively, the bonding wires can be bonded to at least a portion of the plurality of conductor elements using solder balls, an example of which is shown and described in co-pending, commonly assigned U.S. Patent Application Serial No. Incorporate.

As described herein, the various forms of edge bonding incorporated herein enable conductor element 28 to be a Non-Solder-Mask-Defined (NSMD) type of conductor element. In packages that utilize other types of connections to the conductor elements, for example, solder balls or the like, the conductor elements are of the type defined by the solder mask. That is, the conductor elements are exposed in openings formed in a layer of solder mask material. In this arrangement, the solder mask layer may partially overlap the conductor elements or may contact the conductor elements along an edge thereof. Conversely, an NSMD conductor element is a conductor element that is not contacted by a solder mask layer. For example, the conductor element may be exposed on a surface of the substrate that is free of the solder mask layer; or, if present, the solder mask layer on the surface may have an edge spaced from the conductor element. This NSMD conductor element can also be formed into a non-circular shape. When it is desired to solder to a component through a solder mass, the solder mask defines a contact pad that will generally be circular, which will form a substantially circular outline on the surface. For example, when attached to a conductor element using an edge weld, the weld profile itself is not circular, which allows for a non-circular conductor element. For example, such non-circular conductor elements may be oval, rectangular, or have a rectangular shape with rounded corners. They can be further configured to accommodate the weld in the direction of the edge weld while being shorter in the direction of the width of the weld line. This allows for a smaller pitch at the level of the substrate 12. In one example, the conductor elements 28 are between about 10% and 25% greater than the intended size of the substrate 34 in both directions. This can allow the substrates 34 to be placed The accuracy of the time varies and allows the welding process to mutate.

In some embodiments, an edge welded wire (as described above, which may be in the form of a tailor welded) can incorporate a solder ball. As shown in FIG. 23A, a solder ball 1372 is formed on a conductor element 1328, and a bond wire 1332 is formed such that a substrate 1338 is tailor welded to the solder ball 1372 along a portion of the edge surface 1337. In another example, the general size and placement of the solder balls will be as shown at 1372'. In another variation shown in Figure 23B, a bond wire 1332 will be edge welded along the conductor element 1328 as described above, for example, by tailor welding. A solder ball 1373 is then formed on top of the substrate 1338 of the bond wire 1334. In one example, the size and placement of the solder balls will be as shown at 1373'. Each of the bond wires 32 extends to a free end 36 that is remote from the substrate 34 of the bond wire and away from the substrate 12. The ends 36 of the bonding wires 32 are characterized as free ends because they are not electrically connected or electrically bonded to the microelectronic component 22 or any other conductor features within the microelectronic assembly 10 (they are then connected to the microelectronics) Element 22). In other words, the free end 36 can be used for electronic connection (either directly or indirectly via solder balls or other feature elements as discussed herein) to a conductor feature external to the microelectronic assembly 10. The fact that the end 36 is fixed in the predetermined position by the encapsulation layer 42 or is bonded or electrically connected to another conductor feature does not mean that they are not "free" as described herein, as long as Any such feature element is not electrically connected to the microelectronic element 22. Conversely, as described herein, when substrate 34 is electrically or directly connected to microelectronic element 22, it is not free. As shown in FIG. 1, the bases 34 of the bond wires 32 are typically bent at their point of joint welding (or other edge welding) with the individual conductor elements 28. Each of the wire bonds has an edge surface 37 extending between its base 34 and the end 36 of the wire. The particular size and shape of the substrate 34 will depend on the type of material used to form the bond wires 32, the desired bond strength between the bond wires 32 and the conductor elements 28, or It is changed by a special process used to form the bonding wire 32. In a possible alternative embodiment, the bond wires 32 may additionally or alternatively be bonded to the conductor elements 40 exposed in the second surface 16 of the substrate 12, extending away therefrom.

In a particular example, a first bond wire of the bond wires 32 can be adapted (ie, constructed, aligned) or electrically coupled to other circuitry on the substrate for carrying a The first signal potential, and a second one of the bonding wires 32, can also be adapted to synchronously carry a second signal potential different from the first signal potential. Therefore, when the microelectronic package as seen in FIGS. 1 and 2 is energized, the first bonding wires and the second bonding wires synchronously carry different first signal potentials and second signal potentials.

The bonding wire 32 can be made of a conductive material such as copper, copper alloy, or gold. In addition, the bonding wires 32 can also be made from a combination of materials, for example, a core combination of a conductive material (e.g., copper or aluminum) coated with a coating over the core. The coating can be a second conductor material such as aluminum, nickel, or the like. Alternatively, the coating can also be an insulating material, such as an insulative jacket.

In a particular embodiment, the bonding wires may have a core made of a primary metal and a metal finish varnished over the primary metal containing a second metal different from the primary metal. For example, the wire bonds may have a primary metal made of copper, copper alloy, aluminum, or gold, and the metal finish may contain palladium. Palladium can avoid oxidation of the core metal (eg, copper) and can act as a diffusion barrier to prevent diffusion of soluble solder metal (eg, gold) between the unencapsulated portion 39 of the bond wires and another member. In the solder joint, as further explained below. Therefore, in one embodiment, the bonding wires can be formed by palladium-coated copper wires or palladium-plated gold wires, which can be sent through the capillary of the wire bonding fixture. In.

In one embodiment, the wires used to form the bond wires 32 have a thickness between about 15 [mu]m and 150 [mu]m (i.e., in a dimension transverse to the length of the wire). Generally, a wire bond is formed on a conductor component (e.g., conductor component 28), a contact pad, circuitry, or the like using proprietary equipment known in the art. The free end 36 of the bond wire 32 has an end surface 38. The end surface 38 will form at least a portion of a joint in an array formed by individual end surfaces 38 of the plurality of bond wires 32. An exemplary pattern of an array of contacts formed by end surface 38 is shown in FIG. This array can be formed in a regional array configuration, variations of which can be performed using the structures described herein. The array can be used to electrically or mechanically connect the microelectronic assembly 10 to another microelectronic structure, for example, to a printed circuit board (PCB) or to other packaged microelectronic components. An example of this is shown in Figure 6. In this stacked arrangement, bond wires 32 and conductor elements 28 and 40 can carry electronic signals therein, each of which has a different signal potential for different signals to be processed by different microelectronic components in a single stack. Solder mass 52 can be used to interconnect microelectronic components in this stack, for example, by attaching end surface 38 to conductor element 40 electronically and mechanically.

Microelectronic assembly 10 further includes an encapsulation layer 42 formed of a dielectric material. In the embodiment of FIG. 1, encapsulation layer 42 is formed over portions of first surface 14 of substrate 12 that are not covered or occupied by microelectronic element 22 or conductor element 28. Likewise, the encapsulation layer 42 is formed over portions of the conductor element 28 (including its contact pads 30) that are not covered by the bonding wires 32. The encapsulation layer 42 can also substantially cover the microelectronic element 22 as well as the bond wires 32 (the substrate 34 containing them and at least a portion of the edge surface 37). A portion of the bond wire 32 will remain uncovered by the encapsulation layer 42, It can also be referred to as an unencapsulated portion 39, thereby allowing the wire to be electrically connected to a feature or element located outside of the encapsulation layer 42. In one embodiment, the end surface 38 of the bond wire 32 remains uncovered by the encapsulation layer 42 within the major surface 44 of the encapsulation layer 42. In other possible embodiments, except that the end surface 38 remains uncovered by the encapsulation layer 42, a portion of the edge surface 37 is also not covered by the encapsulation layer 42; or alternatively, a portion of the edge surface 37 is not The encapsulation layer 42 is covered. In other words, the encapsulation layer 42 can cover all of the microelectronic assembly 10 of the first surface 14 and above, except for a portion of the bond wires 36 (eg, the end surface 38, the edge surface 37, or a combination of both). In the embodiment shown in the figures, a surface (e.g., major surface 44 of encapsulation layer 42) may be spaced from first surface 14 of substrate 12 by a distance sufficient to cover microelectronic component 22. Accordingly, an embodiment of the microelectronic assembly 10 that is flush with the end 38 of the bond wire 32 and the surface 44 will include bond wires 32 that are higher than the microelectronic component 22 and any underlying solder bumps for flip chip bonding. However, the encapsulation layer 42 can also take other configurations. For example, the encapsulation layer will have multiple surfaces of different heights. In this configuration, the surface 44 in which the end 38 is positioned may be higher or lower than the face-up surface on which the microelectronic element 22 is placed.

The encapsulation layer 42 is used to protect other components within the microelectronic assembly 10, particularly the bond wires 32. This allows for a more robust structure that is less likely to be destroyed by testing it or during transportation or assembly to other microelectronic structures. The encapsulation layer 42 can be formed from a dielectric material having insulating properties, for example, as described in U.S. Patent Application Publication No. 2010/0232129, which is incorporated herein by reference.

3 is an embodiment of a microelectronic assembly 110 having bond wires 132 with the ends 136 of the bond wires 132 not being positioned directly above their individual substrates 34. That is, the first surface 114 of the substrate 112 is considered to extend in two lateral directions to define a plane substantially, The ends 136 of at least one of the bond wires 132 or at least one of them may be offset from the corresponding lateral position of the substrate 134 in at least one of the lateral directions. As shown in FIG. 3, the bond wire 132 can be substantially straight along its longitudinal axis, as in the embodiment of FIG. 1, the longitudinal axis forms an angle 146 with the first surface 114 of the substrate 112. The cross-sectional view of FIG. 3, while displaying the angle 146 only in a first plane that is perpendicular to the first surface 114; however, the bond wire 132 can also be in another plane that is perpendicular to the first plane and perpendicular to the first surface 114. Forming an angle with the first surface 114. This angle can be substantially equal to or different from angle 146. That is, the displacement of the tip 136 relative to the substrate 134 can be in both lateral directions and can be displaced by the same or different distances in such directions.

In one embodiment, the different weld lines in the bond wires 132 are displaced in different directions throughout the assembly 110 and displaced by different amounts. This arrangement allows component 110 to have an array in the hierarchy of surface 144 that is configured in a different manner than the level of substrate 12. For example, an array may cover a smaller total area or a smaller pitch on surface 144 than first surface 114 of substrate 112. Further, the ends 138 of certain bond wires 132 will be positioned over the microelectronic element 122 to accommodate a stacked arrangement of packaged microelectronic components of different sizes. In another example, the bond wires 132 are configured such that the ends of one of the bond wires are positioned substantially above the base of a second bond wire, wherein the ends of the second bond wires are positioned elsewhere. This arrangement changes the relative position of a contact end surface 138 in a contact array as compared to the position of a corresponding contact array on the second surface 116. In another example, as shown in FIG. 8, the bond wires 132 are configured such that the end 138A of one of the bond wires 132A is substantially positioned over the base 134B of the other bond wire 132B, the end 138B of the bond wire 132B. Being positioned elsewhere. This arrangement changes the relative position of a contact end surface 138 in a contact array as compared to the position of a corresponding contact array on the second surface 116. Inside the array, the ends of the contacts The relative position of the end surfaces can be changed or altered as desired depending on the application of the microelectronic assembly or other necessary conditions. 4 is a further embodiment of a microelectronic assembly 210 having bond wires 232 with the ends 236 of the bond wires 232 in a laterally displaced position relative to the substrate 234. In the embodiment of FIG. 4, the bond wires 132 achieve this lateral displacement by incorporating a curved portion 248 therein. The curved portion 248 can be formed in an additional step during the wire bonding process, and can be performed, for example, when the wire portion is pulled out to a desired length. This step can be accomplished with available wire bonding equipment, including the use of a single machine.

If desired, the curved portion 248 can have a variety of shapes to achieve the desired location of the end 236 of the bond wire 232. For example, curved portion 248 can be formed into various shapes of S-bends, such as those shown in FIG. 4, or in a relatively smooth form (eg, as shown in FIG. 5). In addition, the curved portion 248 can also be positioned closer to the base 234 than to the distal end 236, or vice versa. The curved portion 248 can also have the form of a helix or loop; alternatively, it can be in a mixed form that includes a bend in multiple directions or a different shape or shape.

In a further example shown in FIG. 26, the bond wires 132 are arranged such that the substrates 134 are arranged in a first pattern having a first pitch. The wire bonds 132 will be configured such that their unencapsulated portions 139 comprise end surfaces 138 that will be disposed at a plurality of locations having a pattern that is exposed at the surface 44 of the encapsulation layer. The minimum spacing between adjacent unencapsulated portions 38 of the bonding wires 32 is greater than the minimum spacing between adjacent ones of the plurality of substrates 134 and, accordingly, greater than between the conductor elements 128 to which the substrates are bonded The minimum spacing. To this end, the wire bonds may include portions extending in one or more angles relative to the normal direction of the conductor elements, such as shown in FIG. In another example, the wire bonds are bent as shown, for example, as shown in FIG. 4, the ends are 238 Displacement with the substrates 134 in one or more lateral directions, as discussed above. As further shown in FIG. 26, the conductor elements 128 and the ends 138 are arranged in individual columns and rows, and at some locations (eg, in one of the ends) The lateral displacement between the 138 and the individual conductor elements on the substrate to which they are joined may be greater than the lateral displacement between the unencapsulated portions at other locations and the individual conductor elements to which they are attached. To this end, for example, the bond wires 132 may be at different angles 146A, 146B from the surface 116 of the substrate 112.

A further exemplary embodiment of a microelectronic package 310 having a combination of a plurality of bond wires 332 having various shapes resulting in various relative lateral shifts between the substrate 334 and the end 336 is shown in FIG. 5A. Some of the bond wires 332A are substantially straight, the ends 336A are positioned over their individual substrates 334A, while the other bond wires 332B include a slightly curved portion 348B resulting in a slight relative lateral shift between the ends 336B and the substrate 334B. . Further, certain bond wires 332C include a curved portion 348C having a wobble shape resulting in a lateral displacement distance between the end 336C and the associated substrate 334C that is greater than the substrate 334B. Figure 5 also shows a pair of exemplary pairs of bond wires 332Ci and 332Cii, the substrates 334Ci and 334Cii of the bond wires 332Ci and 332Cii being positioned in the same column of a substrate level array and the ends 336Ci and 336Cii being positioned at One corresponds to a different column of the surface level array. In some cases, the radius of the bends in the bond wires 332Ci, 332Cii may be large, such that the bends of the weld lines may be continuous. In other cases, the radius of the bends may be relatively small, and the weld lines may even have a straight portion or a relatively straight portion between the bends in the weld lines. Moreover, in some cases, the unencapsulated portions of the bonding wires are displaced from their substrate between the contacts 328 of the substrate by at least a minimum spacing. In other cases, the unencapsulated portions of the bonding wires may Their substrate is displaced by at least 200 microns.

A further variation of a bond wire 332D is shown that is configured to be uncovered by the encapsulation layer 342 at its side surface 47. In the embodiment shown in the figures, the free end 336D is not covered; however, a portion of the edge surface 337D can additionally or alternatively be uncovered by the encapsulation layer 342. This configuration can be used for grounding of the microelectronic assembly 10 by electrical connection to a suitable feature element, or for mechanically or electrically connecting other feature elements disposed laterally to the microelectronic assembly 310. In addition, FIG. 5 also shows an area of the encapsulation layer 342 that has been etched, molded, or otherwise configured to define a recessed surface 345 that is positioned closer to the substrate than the major surface 342. 12. One or more weld lines, such as bond wire 332A, may not be covered within an area of recessed surface 345. In the exemplary embodiment shown in FIG. 5, end surface 338A and a portion of edge surface 337A are not covered by encapsulation layer 342. In addition to bonding to the end surface 338, this configuration provides a connection (e.g., by solder balls or the like) to another conductor element by allowing the solder to wick and bond with the wick along the edge surface 337A. Other configurations may be employed to enable a portion of a bond wire to be uncovered by the encapsulation layer 342 in the recessed surface 345, which includes one of the following: the end surfaces are substantially flush with the recessed surface 345; or, Other configurations shown for any other surface of the encapsulation layer 342.

Likewise, other configurations by having a portion of the bond wire 332D not covered by the encapsulation layer 342 in the side surface 347 are similar to those discussed elsewhere for variations of the major surface of the encapsulation layer.

FIG. 5A further shows a microelectronic assembly 310 having two microelectronic elements 322 and 350 in an exemplary arrangement, wherein the microelectronic elements 350 are stacked face up on the microelectronic element 322. In this arrangement, wires 324 are used to electrically connect microelectronic component 322 to the substrate. Conductor feature on 312. Various wires are used to electronically connect the microelectronic component 350 to various other features of the microelectronic assembly 310. For example, wire 380 electrically connects microelectronic component 350 to the conductor feature of substrate 312, while wire 382 electrically connects microelectronic component 350 to microelectronic component 322. Further, bond wires 384 (which may be similar in construction to the various bond wires in bond wire 332) are used to form a contact surface 386 on surface 344 of encapsulation layer 342 that is electrically coupled to microelectronic element 350. . This can be used to electrically connect a feature element of another microelectronic component directly from the encapsulation layer 342 to the microelectronic component 350. This wire is also connected to the microelectronic element 322 when the microelectronic element 322 is present without the second microelectronic element 350 attached thereto. An opening (not shown) may be formed in the encapsulation layer 342, for example, extending from the surface 344 of the encapsulation layer 342 to a point in the wire 380 to allow access to the wire 380. It is used to electrically connect an element located outside the surface 344 thereto. A similar opening will be formed over any other wire or bond wire 332, for example, at a point away from the end 336C of the bond wire 332C over the bond wire 332C. In this embodiment, the end 336C will be positioned under the surface 344, which is only available for access and is electrically connected thereto.

An additional arrangement for a microelectronic package having multiple microelectronic components is shown in Figures 27A-C. For example, such arrangements can be used to connect the wire bond arrangements shown in Figure 5A and in the stacked package arrangement of Figure 6, as discussed further below. In particular, in the arrangement shown in FIG. 27A, a lower microelectronic element 1622 is flip chip bonded to conductor element 1628 on surface 1614 of substrate 1612. The second microelectronic element 1650 can be stacked over the first microelectronic element 1622 and connected upwardly to the additional conductor element 1628 on the substrate, for example, via the bond wire 1688. In the arrangement shown in FIG. 27B, a first microelectronic element 1722 is mounted face up on surface 1714 and is connected to conductor element 1728 via bond wire 1788. Second micro-electric The sub-element 1750 exposes a contact at one side thereof that faces and is bonded to a corresponding contact at a face of the first microelectronic component 1722 facing away from the substrate via a second microelectronic component 1750 A set of contacts 1726 that face and are joined to corresponding contacts on the front side of the first microelectronic component 1722. The contacts of the first microelectronic element 1722 bonded to the corresponding contacts of the second microelectronic element are then connected via the circuit pattern of the first microelectronic element 1722 and connected to the substrate 1712 by bond wires 1788. Conductor element 1728.

In the example shown in FIG. 27C, first microelectronic element 1822 and second microelectronic element 1850 are spaced apart from each other in a direction along surface 1814 of substrate 1812. Either or both of the microelectronic elements (and additional microelectronic elements) will be mounted in the face up or flip chip configuration described herein. Further, any microelectronic component used in the arrangement is interconnected via one or two of the microelectronic components or circuit patterns on the substrate or both, and the circuit patterns are electrically connected to the circuit pattern. The individual conductor elements 1828 are electrically connected to the microelectronic components.

5B further illustrates a structure in accordance with a variation of the above embodiment in which a second conductor member 43 is formed to contact a surface 44 exposed at the encapsulation layer 42 or protrudes on a surface of the encapsulation layer 42. An unencapsulated portion 39 of a bond wire above 44, the second conductor member does not contact the first conductor member 28 (Fig. 1). In one embodiment as seen in Figure 5B, the second conductor member includes a contact pad 45 extending over the surface 44 of the encapsulation layer, which provides a weld metal or solder material for engaging a member s surface.

Alternatively, as seen in Figure 5C, the second conductor element 48 is a metal finish lacquer that is selectively formed on the unencapsulated portion 39 of the bond wire. In any case, in one of the examples, the second conductor element 43 or 48 can be formed by a nickel layer and a gold or silver layer. For example, by electroplating, the nickel layer contacts the unencapsulated portion of the bonding wire and overlies the core of the bonding wire, and the gold layer or silver is laminated over the nickel layer. In another example, the second conductor element can be a monolithic metal layer that is substantially comprised of a single metal. In one example, the single metal layer will be nickel, gold, copper, palladium, or silver. In another example, the second conductor element 43 or 48 may comprise a conductor paste or be formed from a conductor paste that will contact the unencapsulated portion 39 of the bond wire. For example, stencil printing, drop coating, screen printing, controlled spraying (for example, a process similar to inkjet printing), or transfer molding can be used in the non-sacs of the bonding wires. A second conductor element 43 or 48 is formed on the sealing portion 39.

Figure 5D further illustrates a second conductor element 43D that can be formed from a metal or other electrically conductive material as described above for conductor elements 43, 48, wherein the second conductor element 43D is at least partially formed within an opening 49, The opening extends into an outer surface 44 of the encapsulation layer 42. In one example, the opening 49 can be formed by removing a portion of the encapsulation layer after curing or partially curing the encapsulation layer to simultaneously expose a portion of the bond wire below it, which portion then becomes the weld The unencapsulated portion of the line. For example, the opening 49 can be formed by laser ablation, etching. In another example, a soluble material is placed in advance at the location of the opening prior to forming the encapsulation layer, and the pre-placed material is then removed after forming the encapsulation layer to form the Opening.

In a further example, as seen in Figures 24A-24B, the base of the plurality of bond wires 1432 can engage a single conductor component 1428. This group of bond wires 1432 can be used to create additional joints over the encapsulation layer 1442 for electrically connecting the conductor elements 1428. The exposed portions 1439 of the common bond wires 1432 may be in an area approximately the size of the conductor element 1428 itself or in an approximate size of approximately a solder mass (for external connection to the wire bond 1432 group). The surface 1444 of the encapsulation layer 1442 in another region is gathered together. As illustrated, the bond wires 1432 can be ball bonded (Fig. 24A) or edge welded (Fig. 24B) on the conductor element 1428, as described above; or, can be as described above for Fig. 23A or 23B or both The solder is typically soldered to the conductor elements.

As shown in Figures 25A and 25B, the ball bonded wire 1532 can be formed as a stud bump on at least a portion of the conductor element 1528. As described herein, the stud bump is a ball welded wire bond wherein the length of the wire segment extending between the substrate 1534 and the end surface 1538 is at most 300% of the diameter of the ball bonded substrate 1534. As in other embodiments, the end surface 1538 and, as the case may be, a portion of the edge surface 1537 of the stud bump is not encapsulated by the encapsulation layer 1542. As shown in FIG. 25B, the stud bump 1532A is formed at the top end of the other stud bump 1532B for substantially forming a base 1534 of a bonding wire 1532 composed of two solder balls, which has a solder. From there, the line segment extends upwardly to the surface 1544 of the encapsulation layer 1542. For example, the height of such bond wires 1532 is less than the bond wires described elsewhere in this disclosure. Accordingly, the encapsulation layer will comprise a major surface 1544 in a region, for example, overlying the microelectronic element 1522; and a minor surface 1545 above the surface 1514 of the substrate 1512, The height is less than 1544 of the main surface. Such arrangements can also be used to form alignment features and to reduce the overall height of a package utilizing a stud bump type bond wire and other types of bond wires disclosed herein while accommodating conductor blocks 1552. The mass block can connect the unencapsulated portion 1539 of the bond wire 1532 and the contact 1543 on another microelectronic package 1588.

Shown in FIG. 6 is a stacked package of microelectronic components 410 and 488. In this arrangement, the solder mass 452 electrically and mechanically connects the end surface 438 of the assembly 410 to the conductor element 440 of the assembly 488. The stacked package can contain additional components and can finally A contact 492 is attached to the PCB 490 or the like used in the electronic device. In this stacked arrangement, the bonding wires 432 and the conductor element 440 can carry a plurality of electronic signals therein, each of which has a different signal potential for different signals to be different in a single stack of microelectronic components (eg, Microelectronic component 422 or microelectronic component 489) is processed.

In the exemplary configuration of FIG. 6, the bond wires 432 are configured to have a curved portion 448 such that at least a portion of the ends 436 of the bond wires 432 extend to a major surface 424 that is superposed on the microelectronic element 422. In the upper area. This region can be defined by the outer periphery of the microelectronic element 422 and extends upward therefrom. An example of this configuration is shown in the view of the first surface 414 of the substrate 412 in FIG. 18, wherein the bond wires 432 are stacked over the back major surface of the microelectronic element 422, the microelectronic element 422 being at its front side 425 The cladding is soldered to a substrate 412. In another configuration (FIG. 5), the microelectronic component 422 is mounted face up to the substrate 312 with the front side 325 facing away from the substrate 312 and at least one bonding wire 336 overlying the front side of the microelectronic component 322. . In one embodiment, the bond wire 336 is not electrically connected to the microelectronic component 322. A bond wire 336 that is soldered to the substrate 312 may also be stacked over the front or back side of the microelectronic component 350. The embodiment of microelectronic assembly 410 shown in FIG. 7 has a plurality of conductor elements 428 arranged in a pattern forming a first array, wherein the conductor elements 428 are arranged in multiple columns and multiples surrounding microelectronic element 422 Among the rows and there may be a predetermined spacing between the individual conductor elements 428. Wire bonds 432 are bonded to the conductor elements 428 such that their individual substrates 434 follow the pattern of the first array created by the conductor elements 428. However, bond wires 432 are then configured such that their individual ends 436 can be arranged in a different pattern according to a second array configuration. In the embodiment shown in the figures, the pitch of the second array may be different from the pitch of the first array, and in some cases, may be smaller than the pitch of the first array. However, in other implementations In an example, the second array may have a larger pitch than the first array; or, wherein the conductor elements 428 are not positioned in a predetermined array, the ends 436 of the bonding wires 432 are positioned. In a preset array. Still further, the conductor elements 428 can also be configured to be in multiple sets of arrays throughout the substrate 412; and the bond wires 432 can be configured such that the ends 436 are in different array groups or in a single Among the arrays.

FIG. 6 further shows an insulating layer 421 that extends along a surface of the microelectronic element 422. The insulating layer 421 is formed of a dielectric material or other electrically insulating material before forming the bonding wires. The insulating layer 421 is capable of protecting the microelectronic component from contact with any bonding wires 432 extending over it. In particular, the insulating layer 421 can prevent an electrical short between the bonding wires and prevent a short circuit between the bonding wires and the microelectronic element 422. In this manner, the insulating layer 421 can help prevent malfunction or possible damage caused by unintended electrical contact between a bond wire 432 and the microelectronic element 422.

The wire bond configurations shown in Figures 6 and 7 enable the microelectronic assembly 410 to be connected to another micro in a particular application (for example, where the relative dimensions of the microelectronic assembly 488 and the microelectronic component 422 are not allowed). Electronic components, such as microelectronic component 488. In the embodiment of FIG. 6, microelectronic assembly 488 is sized such that certain contact pads 440 are positioned in an array that is smaller than the area of the area of front surface 424 or back surface 426 of microelectronic element 422. In a microelectronic assembly in which the bond wires 432 are replaced by substantially vertical conductor features (e.g., struts), there may be no direct connection between the conductor elements 428 and the contact pads 440. However, as shown in FIG. 6, the end 436 of the bond wire 432 having the appropriately configured curved portion 448 is in place to provide the necessary electrical connection between the microelectronic assembly 410 and the microelectronic assembly 488. This arrangement can be used to fabricate a stacked package in which, for example, the microelectronic assembly 410 has a predetermined touch pad array A column of DRAM wafers or the like, and wherein the microelectronic component 422 is a logic die configured to control the DRAM die. This allows the use of a single type of DRAM die in a number of different logic wafers of various sizes, including logic wafers larger than the DRAM die, since the ends 436 of the bond wires 432 are positioned to be desired to be connected to the DRAM die. The place. In an alternate embodiment, the microelectronic package 410 will be mounted on the printed circuit board 490 in another configuration in which the unencapsulated surface 436 of the bond wire 432 is electrically connected to the contact pads 492 of the circuit board 490. Further, in this embodiment, another microelectronic package (eg, a modified version of package 488) is mounted on package 410 by solder balls 452 bonded to contact pads 440.

9 and 10 show a further embodiment of a microelectronic assembly 510 in which bond wires 532 are formed on a leadframe structure. Examples of lead frame structures are shown and described in U.S. Patent Nos. 7,176,506 and 6,765,287, the disclosures of each of each of each of each of In general, a lead frame is a structure formed by a conductor metal (e.g., copper) sheet and a frame that is patterned into a plurality of segments comprising a plurality of wires and further comprising a wire holder ( Paddle). The frame is used to secure the wires and the wire holder during manufacture of the assembly, if useful. In one embodiment, a microelectronic component (eg, a die or a wafer) is bonded face-up to the wire holder and electrically connected to the wires by wire bonds. Alternatively, the microelectronic component can be mounted directly on the wires that can extend beneath the microelectronic component. In this embodiment, the contacts on the microelectronic component are electrically connected to individual wires by solder balls or the like. The wires are then used to form electrical connections to various other conductor structures for carrying an electronic signal potential to and from the microelectronic component. When the assembly of the structure is completed (possibly including an encapsulation layer formed thereon), the temporary components of the frame will be from the wire of the wire frame and the wire holder The place is removed to form multiple unique wires. For the purposes of this disclosure, the unique wires 513 and the wire holder 515 are considered to form a plurality of segmented portions of the substrate 512 together, and the substrate 512 includes conductor elements 528 in portions that are integrally formed therewith. Further, in this embodiment, the wire holder 515 is considered to be inside the first region 518 of the substrate 512, while the wire 513 is considered to be inside the second region 520. Wire bond 524 (which is also shown in the diagram of FIG. 10) connects the microelectronic component 22 carried on the wire holder 515 to the conductor component 528 of the wire 515. The bond wires 532 will be further bonded to the additional conductor elements 528 on the wires 515 at their base 534. An encapsulation layer 542 is formed over the assembly 510 such that the ends 538 of the bond wires 532 are not covered at multiple locations on the surface 544. In a structure corresponding to the structure described for other embodiments herein, additional or alternative portions of the bond wires 532 are not covered by the encapsulation layer 542.

Figure 11 further illustrates an underfill layer 620 for enhancing the bond between the bond wires 632 of one of the packages 610A and the solder bumps 652 of the other package 610B mounted thereon. As shown in FIG. 11, the underfill layer 620 only needs to be disposed between the mutually facing surfaces 642, 644 of the packages 610A, 610B; however, the underfill layer 620 can also contact the edge surface of the package 610A and can The first surface 692 of the circuit board 690 of the package 610 is contacted. Further, if present, a portion of the underfill layer 620 extending along the edge surface of the package 610A, 610B will be disposed between a major surface of the circuit board with respect to the package disposed above. ^At an angle between 90 ^° and 90 ^° , and tapering from a larger thickness adjacent to the circuit board to a certain height above the circuit board and adjacent to one or more of the packages The smaller thickness of the person.

The package arrangement shown in Figures 28A through D can be implemented in one of the techniques for fabricating an underfill layer, and in particular, a portion thereof is disposed in package 1910A There is a face-to-face relationship with 1910B (e.g., surface 1942 of package 1910A and surface 1916 of package 1910B). As shown in FIG. 28A, the package 1910A will extend beyond the edge surface 1947 of the package 1910B such that, for example, a portion of the surface 1944 of the encapsulation layer 1942 is exposed outside of the package 1910B. This area is treated as a drop zone 1949 whereby a device can deposit a flowable underfill material onto the drop zone from a vertical position relative to the zone. In this arrangement, the size of the dispensing zone 1949 can be designed such that the underfill material can be deposited on the surface in the form of a mass without spilling over the edge of the surface while having a sufficient amount Flowing under the package 1910B, where the material can be drawn into the region between the facing surfaces of the packages 1910A and 1910B by capillary tubes, including any joints between them, for example, solder mass or the like . When the underfill material is drawn between the mutually facing surfaces, additional material is deposited on the dispensing area so that a continuous flow is achieved without excessively overflowing the edges of the package 1910A. As shown in Figure 28B, the dispensing zone 1949 will enclose the package 1910B and have a dimension D of about one millimeter (1 mm) on each of the orthogonal directions away from the peripheral edge of the package 1910B. This arrangement allows for dispensing over one or more of the packages 1910B in a sequential or synchronized manner. An alternate arrangement is shown in Figures 28C and 28D, in which the drop-coating zone 1949 extends only along two adjacent sides of the package 1910B and in a direction orthogonal to the peripheral edge of the second package. 1 mm dimension D'; in Figure 28D, the dispensing zone 1949 extends along a single side of the package 1910B and has a dimension D" of about 1.5 mm to 2 mm in an orthogonal direction away from the surrounding edge of the package.

In a similarly sized arrangement of microelectronic packages 2010A and 2010B in a horizontal profile, a compliant chassis 2099 will be used to secure the packages 2010A and 2010B during attachment, for example, by heating or curing. Body block 2052 (for example, reflow solder The die is bonded to the terminal of the second package and the component comprising the unsealed portion 2039 of the bond wire 2032 to bond the packages 2010A and 2010B together. This arrangement is shown in FIG. 29, in which package 2010B is assembled over package 2010A using conductor mass 2052 (eg, solder mass) bonded to terminal 2043 on package 2010B. The packages are aligned such that the solder mass 2052 will align with the unencapsulated portion 2039 of the bond wire 2032 of the package 2010A or the second conductor element aligned with the end surface 2038 of the bond wire 2032, as described above. Said. Chassis 2099 is then assembled around packages 2010A and 2010B to maintain this alignment during a heating process during which the terminals of the second package engage the bond wires 2032 or the second of the first package. Conductor element. For example, the heating process can be used to reflow the solder mass 2052 to solder the termination of the second package to the bond wires 2032 or the second conductor component. Chassis 2099 also extends inwardly along surface 2044 of package 2010B and a portion of surface 2016 of package 2010A to maintain contact between the packages prior to and during reflow. The chassis 2099 can be a resiliently compliant material, such as rubber, TPE, PTFE (polytetrafluoroethylene), fluorenone, or the like, and is smaller in size than the assembled package, so that the position is correct. The chassis exerts a pressing force when it is in place. The chassis 2099 will also remain in the correct position during application of an underfill material and will include an opening for such application via the opening. The compliant chassis 2099 will be removed after package assembly.

In addition, or in the microelectronic packages 2110A and 2110B as shown in FIGS. 30A-F, the lower package 2110A may include at least one alignment surface 2151. One example is shown in Figure 30A, in which a plurality of alignment surfaces 2151 are incorporated in the encapsulation layer 2142, near the corners of the package 2110B. The alignment surfaces are inclined relative to the major surface 2144 and define an angle of about 0 ^° and higher relative to the major surface 2144 at a location and include 90 ^° , the alignment surface extensions being adjacent to the major surface 2144 and The minor surface 2145 above the substrate 2112 has a greater distance than the major surface 2144. The secondary surfaces 2145 will be disposed adjacent to the corners of the package 2110A and can extend partially between their intersecting sides. As shown in FIG. 30B, the alignment surfaces also form an inner corner opposite the intersection side of the package 2110A and can be incorporated in a similar fashion into all corners of the package 2110A (for example, four corners). . As shown in Figure 30C, the alignment surfaces 2151 are positioned at an appropriate distance from the unencapsulated portion of the corresponding bond wire 2132 such that when there is a plurality of protrusions (for example, conductive protrusions) The second package 2110B, for example, a conductor block or solder ball bonded thereto, is stacked on the top end of the package 2110A, and the alignment surfaces 2151 guide the solder balls into the unbonded portions of the bonding wires 2132. The upper portion of the encapsulation portion corresponds to the correct position of the alignment surfaces 2151. The solder balls are then reflowed to bond the unencapsulated portions of the bond wires 2132 of the package 2110A.

A further arrangement using alignment surfaces 2251 is shown in Figures 31A-C, which are aligned between a raised inner surface 2244 and a lower outer surface 2245. In this arrangement, the inner surface 2244 can be stacked over the microelectronic element 2222 and thus can be placed spaced above the substrate 2212. The outer surface 2245 is relatively close to the substrate 2212 in the thickness direction of the substrate and is vertically positioned between the surface 2214 of the substrate 2212 and the surface 2223 of the microelectronic element 2222. One or more of the unsealed portions of the bond wires 2232 are positioned with respect to the alignment surface 2251 for achieving alignment of the solder balls 2252 or other conductor projections as described with respect to Figures 30A-C. As described above, such a stepped arrangement can be used with or without the alignment function to achieve a total lower component height under the assumption of a particular weld mass size. Further, incorporating a raised inner surface 2244 increases the ability of the package 2210A to resist warpage.

Figure 12 is a photographic image showing the bonding wire of the first member 610A An exemplary junction between 632 and a corresponding solder mass 652 of a second component (eg, microelectronic package 610B). In Fig. 12, reference numeral 620 denotes a place where an underfill layer can be disposed.

13A, 13B, 13C, 13D, 13E, and 13F show some possible variations in the structure of the bonding wire 32 described above in connection with FIG. For example, as seen in Figure 13A, a weld line 732A can have an upwardly extending portion 736 that terminates in an end 738A having the same radius as the radius of the portion 736.

Figure 13B illustrates a variation in which end 738B is a tapered tip relative to portion 736. Furthermore, as seen in Figure 13C, the tapered tip 738B of the bond wire 732A can have a center of mass 740 that is offset from the cylindrical portion of the wire formed therewith in the radial direction 741. This shape may be a weld fixture mark resulting from the process of forming the wire, as further described below. Alternatively, a weld fixture mark other than that shown at 738B may also be present on the unencapsulated portion of the bond wire. As further seen in FIG. 13A, the unencapsulated portion 739 of a wire bond can protrude away from the substrate 712 at an angle 750 within 25 degrees of the perpendicular to the surface 730 of the substrate 712 on which the conductor element 728 is disposed.

Figure 13D illustrates that an unencapsulated portion of a bond wire 732D will include a spherical portion 738D. Some or all of the bonding wires on the package will have this structure. As seen in FIG. 13D, the spherical portion 738D will integrate a cylindrical portion 736 of the bonding wire 732D, wherein the spherical portion and at least one core of the cylindrical portion of the bonding wire are substantially copper and copper. Alloy, or gold. As further explained below, the spherical portion can be melted at an opening of the capillary of the soldering fixture during a pre-shaping process prior to tailor welding the wire to a conductor member 728 of the substrate. A part of the wire is formed. As seen in Figure 13D, the diameter 744 of the spherical portion 738D can be greater than the diameter of the cylindrical wire portion 736 integrally formed therewith. 746. In a particular embodiment, for example, as shown in FIG. 13D, the cylindrical portion of the bond wire 732D integrally formed with the spherical portion 738D will protrude beyond the surface 752 of the encapsulation layer 751 of the package. Alternatively, as seen in Figure 13E, the cylindrical portion of a bond wire 732D can be completely covered by the encapsulation layer. In this case, as seen in Figure 13E, the spherical portion 738D of the bond wire 732D may be partially covered by the encapsulation layer 751 in some cases.

Figure 13F further illustrates a bond wire 732F having a core 731 made of a primary metal and a metal finish 733 thereon, the metal finish comprising a second metal superposed over the primary metal, for example, The palladium shell copper wire described above or the palladium shell gold wire. In another example, an oxidized protective layer made of a non-metallic material (for example, a commercially available "Organic Solderability Preservative (OSP)") is formed on an unencapsulated portion of a bonding wire. To prevent oxidation thereof until the unencapsulated portion of the wire is bonded to the corresponding joint of the other member.

The system shown in Figure 14A is capable of bonding the wire bond 32 described herein prior to soldering the shaped wire portion 800 to a soldering surface (e.g., soldering to the conductor component 28 on a substrate) (Figure 1). The method of shaping the portion of the wire extending from one of the faces of a welding fixture 804 (for example, extending from the face 806 of a capillary type welding fixture 804) is further described herein. As seen at stage A in the figure, a portion of the wire 800 (i.e., an integrally formed portion of a metal wire having a predetermined length 802, such as the gold or copper wire described above in connection with Figure 1 or The synthetic wire) extends beyond a side 806 of a welding fixture 804. In the following example, the welding fixture 804 is a capillary having an opening in its face 806 that extends beyond the opening. However, although the following example shows the welding fixture as a capillary; however, unless otherwise mentioned, the welding fixture may be a capillary or a different type of welding treatment. With, for example, ultrasonic or thermal ultrasonic welding fixtures or welding fixtures.

To arrange the predetermined length of the metal wire to extend outward beyond the capillary face 806, the initial wire length is set by using the welding fixture 804 to weld the wire to a soldered surface in a previous processing stage, for example In this case, by tailor welding or by welding. In one embodiment, when the tape bonding method is applied, the tape body is tied to one or more flat surfaces and has a polygonal cross section, for example, a rectangular cross section. Thereafter, the face 806 of the welding fixture is moved relative to the welding surface such that the welding fixture surface 806 is then disposed at a greater height above the plane in which the welding surface is located, and has the predetermined length The wire portion extends beyond the capillary face 806. Therefore, the movement of the welding jig relative to the welding surface causes the wire portion 800 having the predetermined length to be pulled out of the welding jig. Then, the wire is cut at the boundary between the tailor solder which is sent to the soldering surface and the wire portion 800. In this manner, the wire portion 800 will be severed at its end 838. In one example, to cut the wire portion 800, the wire will be clamped at a location above the capillary face, and the clamped wire will then be tensioned to allow the clamp to be clamped. The wire will break adjacent to the welded portion of the wire and thus release the end 838 of the wire portion 800 from the second wire portion being welded. The wire can be tensioned by applying a force to the other relative to the capillary or the welding surface, for example, by extending through the capillary relative to the wire The capillary is pulled in at least a portion of the direction of the vertical direction. At this point, the wire portion 800 can extend away from the face 806 of the capillary in the straight direction 801. In one example, the direction 801 can be perpendicular to the face 806 of the capillary.

In shaping the wire portion 800, the capillary and a forming surface (e.g., a channel or 812 within the channel forming the element 810) are positioned relative to each other, The end 838 of the wire portion 800 extending beyond the capillary face 806 is positioned at a greater depth 802 from the capillary face 806, the depth 802 being greater than the depth 803 forming the surface 812 under the capillary face. Forming element 810 can be one or more fixtures or elements that together have a surface adapted to help form (i.e., shape) the portion of the wire before the wire portion is soldered to the conductor element of the substrate.

As seen at stage B, at least one of the capillary 804 or a forming surface 812 is moved relative to each other such that the wire portion 800 moves relative to the forming surface 812 in at least a first direction 814 parallel thereto, In order to bend the wire portion 800 toward the capillary 804. For example, as shown in FIG. 14A, movement of the capillary 804 relative to the first forming surface 812 will cause the wire portion to be bent away from the initial direction 801 as seen at stage A, such that at least a portion of the wire portion 800 is made. Extending along the capillary face 806. In one example, the first forming surface 812 is a surface that extends within a groove in the first direction 814 along a forming element 810, wherein the first direction is parallel to the capillary face 806. For example, the groove 815 will open to the second surface 813 forming the element facing the capillary face 806. As seen at stage B, during the shaping or pre-forming process, the wire portion 800 can extend into the groove and can extend in a first direction parallel to the surface 812 and parallel to the direction of movement 814 of the capillary 804, such as Seen at stage B of Figure 14A.

Then, after wire shaping is performed at stage B, at stage C, the capillary 804 is moved in a second direction 817 that is transverse to the direction parallel to the capillary face 806. During this processing stage, the bare wall 820 of the capillary extending away from the capillary face 806 can face a second forming surface 864. In this manner, movement of the capillary 804 in the direction 817 can cause the wire portion 800 to be bent in a direction toward the bare wall 820. One of the examples The second forming surface 864 will form a surface of the element 810 that extends away from the first forming surface 812. In one example, the second forming surface may extend at an angle 865 to the first forming surface 812, the angle 865 being the same as the angle 867 at which the bare wall of the capillary extends relative to the capillary surface 806. As seen at stage C of Figure 14A, movement of the capillary causes a portion of the wire portion 800 to protrude upwardly in the direction 818 along the exposed wall 820 of the capillary. The capillary or welding fixture 804 can have a groove, flat side, or other wire guiding feature on its exposed wall to help guide the wire there. When the welding process has a vertical wall (as shown in Figure 35), the second forming surface 864 can be vertical, i.e., at an angle normal to the face of the welding jig. The wire portions 800 may be formed of copper or a copper alloy and may have a relatively small diameter, for example, 25 microns, such that each package has a large number of input/output connections, for example, 1000 to 2000. article.

Stage C is illustrated by capillary 804 and another forming surface 823 in a direction transverse to capillary face 806 (for example, in direction 817) or perpendicular to the capillary face 806, the forming surface 823, or Further processing of the wire portion 800 is performed perpendicular to the relative movement in the direction of the two surfaces. For its purposes, the forming surface 823 will be considered a "casting surface." When completed, this relative movement will cast a portion 825 of the wire portion disposed between the capillary face 806 and the casting surface 823.

Figure 14B is a fragmentary plan view of a shaped wire portion 800 at a location below the capillary face 806; and Figure 14C further shows the wire portion 800 between the capillary face 806 and the cast surface 823 and A cross-sectional view of the location of portions of the wire portion, as further described below. For example, FIG. 14B illustrates the shaped wire at a location below the casting surface 823 and looking toward the cast portion 825 of the wire portion 800. In part, the capillary surface 806 is present at a location above (i.e., behind) the cast portion 825 of the wire portion of Figure 14B. A portion 827 of the wire portion 800 that aligns the opening 808 in the capillary face is also illustrated in Figures 14B, 14C. A portion 831 of the wire portion 800 extending away from the capillary 820 along the bare wall 820 (Fig. 14A) of the capillary is also illustrated in Figures 14A-B. The portions 827 and 831 of the wire portion typically maintain a cylindrical cross-section after the process described above with respect to Figure 14A, when the portion 825 of the wire portion 800 is cast between the capillary face 806 and the cast surface 823, the wire Such portions 827, 831 can prevent the wire from flattening.

When the casting surface 823 is flat, in one example, at least a portion of one side 833 of the cast portion 825 of the wire portion facing the casting surface 823 will also be flat. This flat surface 833 can then be further capillary welded to a soldering surface of a conductor element 28, as described above.

Alternatively, however, the cast surface 823 may be patterned in some cases such that there are raised features and recessed features. In this case, the face 833 of the cast portion 825 of the wire portion can likewise be a patterned face comprised of a raised feature and a recessed feature that faces away from the capillary face 806. This patterned surface of the cast portion 825 can then be soldered to a soldering surface of a conductor element 28.

After pre-shaping the wire portion 800 in this manner, the capillary can be used to weld the pre-shaped wire portion 800 to a soldering surface of a conductor member 28 of a substrate (Fig. 1). To perform wire bonding, the wire will now be moved away from the forming unit 810 and moved toward the conductor element 28 (FIG. 1) of the substrate, which will then weld the cast wire portion 825 to the conductor element 28 to The conductor element 28, the end 838 of the wire portion will be Distal from the distal end 38 of the wire of the conductor element 28 (Fig. 1).

Having the wire portion 800 having a cast portion 825 with a flat or patterned lower surface 833 or having a portion of a flat and partially patterned surface can aid in the shaped wire portion 800 and the conductor member 28 A good weld is formed between the welded surfaces. As can be understood from Fig. 14A, the shaped wire portion 800 is long relative to the wire when it is ready for soldering to the soldering surface, and when the wire portion is soldered to the conductor member 28, Except for the soldering surface of the conductor element 28 (Fig. 1), the lengthy extension of the wire, although not all, is largely unsupported by the majority of the shaped wire portion.

When the wire portion is welded to the soldering surface, casting the wire portion can improve the stability of the wire portion. For example, planarization or patterning of the cast portion 825 of the wire can help increase the lower surface 833 of the cast portion 825 when the capillary exerts a force to the wire portion for soldering it to the weld surface. The friction between the welding surfaces and the tendency of the wire to rotate, roll, or otherwise move when the welding force is applied. In this manner, the cast portion 825 of the wire portion can exert a force on a face 806 of the capillary to overcome the possibility of rotation or rolling of the wire having the original cylindrical shape when the wire is welded to the weld surface. Figure 15 further illustrates an example of the movement of the capillary over a surface forming element 810 in a method in accordance with an embodiment of the present invention. As seen in this figure, in a particular example, the forming element 810 can have a first opening or recess 830, wherein when the wire portion 800 extends outward beyond the opening 808 of the capillary, the capillary 804 is set At the initial stage of wire shaping (stage A of Figure 14A). The opening 830 or recess may include a tapered portion, channel, or groove 832 that can assist in phase B on surface 812. The wire portion 800 is guided and it is also possible to guide the wire portion over a particular portion of the surface 812. This tapered portion can be tapered such that the tapered portion becomes smaller and smaller in the direction toward the surface 812 to assist in fastening and guiding the wire portion to a particular position.

The forming unit can further include a channel 834 or trench for guiding the wire segment 800 in stage B of the process. As further shown in FIG. 15, the forming unit can include a further opening or recess 840, wherein an inner surface 816 thereof can serve as a second forming surface that will follow the second in stage C of the process. A surface movement is formed to bend the metal wire segment against the outer wall 820 of the capillary in direction 818. In one example, the second forming surface in the opening or recess 816 will include a channel or groove 819 that is recessed relative to the other inner surface within the opening 816. In a particular example, the casting surface 823 will be disposed within the opening 816. Optionally, in addition to the grooves 819, or alternatively, a groove may be formed on the jig or formed on the capillary itself. For example, as shown in FIG. 14C, in addition to or in addition to the grooves 819, a groove 811 can also be formed on the capillary face 806.

A variation of the capillary shown in Figure 14 will be used in an embodiment that incorporates a vertical or nearly vertical sidewall 2820. As shown in FIG. 35, the sidewall 2820 of the capillary 2804 can be substantially vertical or, in other words, parallel to the wire segment 2800 or perpendicular to the face 2806 of the capillary 2804. This allows for a closer to vertical weld line (as in Figure 1) compared to the angle achieved by the sidewall of the outside of the capillary defining an angle substantially less than 90 ^° (eg, the capillary shown in Figure 14). 32), that is, the surface away from the first surface of the substrate is closer to an angle of 90 ^° . For example, using the forming fixture 2810, the wire can be placed such that the first portion extends at an angle between the lower portion of the first wire portion 2822: between 25 ^° and 90 ^° , or about 45 ^degrees . Between ^° and 90 ^° , or between about 80 ^° and 90 ^° .

In another variation, a capillary 3804 would include a surface 3808 that protrudes beyond its face 3806. For example, this surface 3808 would be incorporated over the edge of the sidewall 3820 and could form a lip. In the method for forming a weld line (for example, 32 in Fig. 1), the capillary 3804 is pressed against the first portion 3822 of the top wire segment 3800 during formation of the wire segment, for example, when the capillary When moving in a direction along a forming surface 3816 that extends in a direction away from surface 3812. In this example, surface 3808 will be squeezed into the first portion 3822 near the location where the remaining wire segments 3800 extend the bend. This can cause the wire segment 3800 to deform such that it can squeeze against the wall portion 3820 of the top capillary 3804 and move to a more vertical position when the capillary 3804 is removed. In other examples, the deformation caused by the surface 3808 can cause a position of the wire segment 3800 to remain substantially unchanged when the capillary 3804 is removed.

16A through 16C illustrate various stages of shaping a wire and a set of forming surfaces used therein in a method of forming a wire bond, in accordance with an embodiment of the present invention. Figure 16A shows a forming element 850 that can be used to shape a portion of an electrical wire that extends beyond one face of a welding fixture prior to forming a weld between the wire portion and a soldering surface of a substrate. As in the example described above (Figs. 14A-C), the welding fixture 804 can be a capillary type fixture or other welding fixture, such as an ultrasonic welding fixture or a fusion welding fixture. As seen in Figure 16A, a recess 852 can extend from the edge 851 of the forming element 850 in an inward direction. The recess 852 can be configured to receive a portion of an electrical wire extending from one side of a welding fixture, for example, a wire portion extending from one side of the capillary or other type of welding fixture. In a particular embodiment, the depressions may additionally include a tapered portion having a width 855 Or channel 854, the width 855 is slightly larger than the diameter of the wire to be shaped therein. In the case of a tapered portion, the width will become smaller and smaller in the direction toward the first forming surface 860, such that the tapered portion will help guide the wire to a particular region 862 of the first forming surface. (for example, Central District). The first forming surface may be flat, that is, a planar or substantially planar surface extending in the first and second transverse directions; and the first surface forming region 862 can also be flat. In this manner, when the wire portion is shaped in a stage of the method (e.g., in stage B as seen in Figure 14), the first forming surface can extend parallel to one side of the welding fixture or capillary In the direction.

Forming element 850 also typically includes a second forming surface 864 that extends away from the first forming surface 860. In the example seen in FIG. 16A, the second forming surface 864 extends away from the first forming surface 860. The second forming surface 864 can be disposed in a second recess 866 that extends inwardly from the edge 861 of the forming element that is opposite the edge 851. In one example, the angle 865 at which the second forming surface 864 is inclined away from the first forming surface 860 is the same as the angle 867 at which the bare wall 868 of the welding fixture is inclined away from the welding fixture face, as in FIG. 14A. see.

The forming element 860 typically has an additional surface that can be a "cast" surface 870 that is pressed against the casting surface 870 during the wire shaping process for casting to be placed A portion of the wire between the face 806 of the welding fixture and the casting surface 870.

Figure 16B illustrates a stage in shaping the wire portion 800 (Figure 14A) when the capillary or other type of welding fixture 804 has been moved into a position to begin shaping the portion of the wire that extends beyond the surface of the welding fixture. At this time, the wire portion 800 extends over the forming member 850 Among the depressions 852. The stage of shaping the wire shown in FIG. 16B is similar to stage A shown in FIG. 14A, and FIG. 16B further shows the direction 814 in which the welding jig moves along the forming element 850.

Figure 16C illustrates a further stage of shaping the wire portion 800 (Figure 14A) as the welding fixture 804 has moved in a direction 814 along a first forming surface 860 or 862, which has been described above in connection with Figure 16A. . A portion 831 of the wire portion shown in the figures extends away from the opening 808 of the welding fixture, similar to the portion of the wire seen at stage B in Figure 14A.

Figure 16D further illustrates a stage similar to that seen at stage C of Figure 14A, wherein the welding fixture 804 has been moved to a position aligned with a second recess in the forming element. At this point, the portion of portion 831 of the wire portion that extends away from the opening is bent toward the exposed wall of the welding fixture, as shown and described above with respect to Figure 14A. In addition, at this time, as shown and described above with respect to stage C of FIG. 14A, the welding jig 804 is extruded by the wire between the face of the welding jig and the casting surface. A portion of the portion is cast to the wire portion, and the casting surface 870 is as shown in Figure 16A. Figure 16E is a schematic diagram showing that bond wires 932 formed in accordance with one or more of the methods described herein have ends 938 that are offset from their individual substrates 934. In one example, an end 938 of a wire will be displaced from its individual substrate such that the end 938 is displaced in a direction parallel to the surface of the substrate beyond the circumference of the conductor element to which it is attached. In another example, the end 938 of a wire bond will be displaced from its individual substrate 934 such that the end 938 is displaced in a direction parallel to the surface of the substrate beyond the perimeter 933 of the conductor element to which it is attached.

17A to C illustrate an example of shaping the wire portion at a forming station 880 using a welding jig. The forming station will be assembled (for example, to be installed) to a wire bonding station a structure assembled therewith, whereby a wire portion is moved by the welding fixture to the wire bonding station after being shaped by the welding fixture at the forming station and then soldered to a substrate, microelectronic component, or the like a welded surface on the component. As seen in Figure 17A, a portion of a weld fixture 804 of a weld head 844 is first moved to a forming station 880 by moving the welding fixture as described above, and the wire portion will be at the forming station 880. The place was shaped. For example, the weld head 844 or a portion of the weld head can rotate about an axis to move the welding jig to the forming station 880.

The forming element 850 is oriented in a particular direction with respect to the wire bonding station to reduce the range of movement required for the welding head or welding fixture between the forming station and the wire station. As seen in Figure 17A, in one example, the forming element 850 at the forming station will be oriented such that the recess 852 described above in conjunction with Figure 16A can be at a distal location relative to the wire station. Whereas, the casting surface 870 can be at a location that is relatively close (i.e., adjacent to) the wire station. In another example, the recess 852 and the casting surface 870 are aligned in a reverse direction with the recess 852 being closer to the wire station than the casting surface. In yet another example, the forming element may be in one of the alignments during shaping of the wire portion, and then the alignment of the forming element may be reversed to move the shaped wire portion to a final position for soldering The welding process on which the portion of the shaped wire is allowed to have a greater degree of freedom of movement before.

Figure 17B illustrates the position of the welding jig 804 and the welding head 844 at the end of shaping the wire portion (which may include casting the wire portion as described above). At this point, the welding fixture will then be moved from the position at the forming station 880 (Fig. 17B) to the position at the bonding station 882 (Fig. 17C) where the shaped wire portion will then be welded to one. A welded surface of member 884.

Another variation of the embodiment shown in Figures 18A through 18C in which the welding fixture 804 and a forming member 1810 (e.g., forming member 810 or 850 described above) are assembled to a common bonding head 1844. In one example, the forming element 1810 can be attached to or otherwise carried on the soldering tip 1844 such that movement of the soldering tip carries the forming component 1810 attached thereto and The welding fixture. However, the forming element 1810 is moved relative to the welding fixture to aid in shaping the wire portion prior to welding the wire portion; however, then, once the wire has been shaped and ready to be welded to a member 1884, the formation Element 1810 will be moved away from this formation position as seen in Figure 18C.

In one example, the forming element 1810 can be carried on a rotatable or movable arm 1812 for relative movement between the welding jig 1804 and the arm 1812. Alternatively, the forming element 1810 can be provided on an arm having a fixed position during operation and, in the alternative, the welding jig can be moved relative to the forming element. In an example of operation, at the processing stage as shown in FIG. 18A, the bonding fixture 1804 and the forming element 1810 are arranged in a position as shown in FIG. 18A, wherein the forming element 1810 is The welding fixture is tied at a spaced apart position. When aligned as shown in Figure 18A, a shaped wire portion is welded to the soldering surface of a conductor member or other feature member on member 1884.

Then, as seen in FIG. 18B, the relative movement between the forming element and the welding jig places the welding jig and the forming element at a position where the wire portion can be shaped, for example, with FIG. 14 As described in one or more of 16 patterns. Thus, in a particular example, during the shaping of the wire portion, the welding jig will remain on or adjacent to a member 1884 to be welded, which may be at the component. A special weld on 1884 is either above or near the particular weld. In this manner, the movement of the weld head is reduced, and thus it is possible to shorten the amount of time required to shape the wire portion prior to welding the wire portion to the weld surface on the member.

As seen in Figure 18C, after the wire portion has been shaped, the forming element 1810 can be moved to a third position as seen in Figure 18C, and when the forming element is in this position, the soldering The jig can then weld the shaped wire portion to the member.

Figure 19 is a variation of the pre-formation process described above, which can be used to form a bond wire 332Cii (Fig. 5) having a bend and end 1038 with the end 1038 in the transverse direction 1014A. The portion 1022, which will be tailor welded to the conductor elements of the substrate 1034 of the bond wires, is displaced.

As seen in Figure 19, the first three phases A, B, and C of the process will be the same as described above with reference to Figure 14A. Next, referring to stages C and D in the figure, a portion 1022A of the bond wire adjacent to the face 806 of the capillary 804 is clamped by a jig integrally formed with the forming unit. The clamping action can be actively or passively implemented by the relationship of the capillary movement over the forming unit. In one example, the clamping action can be performed by squeezing a flat plate having a non-sliding surface thereon onto the metal wire segment 800 to prevent movement of the metal wire segment.

When the metal wire segment 800 is clamped in this manner, at stage D shown in Figure 19, the capillary or welding fixture 804 will move in the direction 1016 along the third surface 1018 of the forming unit 1010 and be sent out The length of the wire equal to the distance moved in the surface 1018. Then, at stage E, the capillary will move down the third surface 1024 of the forming unit to allow a portion of the wire to flex upwardly along the outer surface 1020 of the capillary 804. In this way, An upwardly projecting portion 1026 of the wire is coupled to the other upwardly projecting portion 1036 by a third portion 1048 of the wire.

After forming the wire segment and soldering it to a conductor element for forming a wire bond, particularly the type of solder ball discussed above, the wire (for example, 32 in Figure 1) will then be associated with the capillary ( For example, the remaining wires in 804) of Figure 14A are partially separated. This can be done at any location away from the substrate 34 of the bond wire 32 and is preferably accomplished at a location that is spaced apart from the substrate 34 by a distance sufficient to define the desired height of the bond wire 32. This separation can be performed between the face 806 and the base 34 of the bond wire 32 by a mechanism disposed within the capillary 804 or disposed outside of the capillary 804. In one of the methods, the wire segment 800 can be separated by effectively burning through the wire 800 at a desired separation point, which can be accomplished by applying a flare or flame thereto. To achieve greater wire bond height accuracy, the wire segment 800 can be cut in different forms. As discussed herein, shaving can be used to describe a partial cut that attenuates the wire at a desired location; or, completely cut through the wire for the purpose of completely separating the bond wire 32 from the remaining wire segment 800. .

In one of the examples shown in FIG. 32, a cutting blade 805 is integrated into the welding head assembly, for example, within the capillary 804. As shown, an opening 807 will be incorporated into the sidewall 820 of the capillary 804 through which the cutting blade 805 can extend. The cutting blade 805 can be moved into and out of the interior of the capillary 804 so that it can alternately allow the wire 800 to freely pass or snap the wire 800. Accordingly, when the cutting blade 805 is positioned in a position outside the inside of the capillary, the wire 800 is pulled out and the wire 32 is formed and welded to a conductor member 28. After the weld is formed, the wire segment 800 is clamped with a clamp 803 integrated into the weld head assembly to secure the position of the wire. The cutting blade 805 will then be moved Into the wire segment, to completely cut the wire or partially cut or weaken the wire. The complete cut will form the end surface 38 of the bond wire 32 at a point where the capillary 804 can move away from the bond wire 32 (for example, to form another bond wire). Likewise, if the wire segment 800 is attenuated by the cutting blade 805, moving the welding head unit while the wire is still held by the wire clamp 803 can break the wire 800 at the region that is weakened by the portion. Lead to separation.

The movement of the cutting blade 805 can be initiated by a pneumatic cam or by a servo motor using an offset cam. In other examples, the cutting blade 805 can be moved by a spring or a vibrating diaphragm. The trigger signal for the initiation of the cutting blade 805 can be based on a time delay from the start of the countdown to form the solder ball; or can be initiated by moving the capillary 804 to a predetermined height above the bond wire substrate 34. . This signal will be coupled to other software that operates the welding machine such that the cutting blade 805 position can be reset prior to any subsequent weld formation. The cutting mechanism also includes a second blade (not shown) at a position juxtaposed to the blade 805, the wire being positioned therebetween so as to be relative to the first blade and the second blade One or more of the ones move the other of the first and second blades to cut the wire, for example, in one example, the wire is cut from the opposite side of the wire.

In another example, a laser 809 would be assembled to the soldering head unit and positioned to cut the wire. As shown in FIG. 33, a laser head 809 will be positioned outside of the capillary 804, for example, by being mounted there or at another location on the solder joint unit including the capillary 804. The laser will be activated at the desired time, for example, for the time discussed above with respect to the cutting blade 805 of FIG. 32, for cutting the wire 800 to form a bond wire 32 at a desired height above the substrate 34. End surface 38. In other modes of implementation, Laser 809 It will be positioned to direct the cutting beam through or into the capillary 804 itself and will be inside the welding head unit. Carbon dioxide lasers are used in one example; alternatively, Nd:YAG lasers or Cu vapor lasers may be used in an alternative.

In another embodiment, a stencil unit 824 as shown in Figures 34A-C is used to separate the bond wires 32 from the remaining wire segments 800. As shown in FIG. 34A, the stencil 824 is a structure having a body for defining an upper surface 826 at or near a desired height of the bond wires 32. The stencil 824 will be configured to contact the conductor elements 28 or any portion of the substrate 12 or a package structure connected thereto between the conductor elements 28. The stencil includes a plurality of holes 828 that will correspond to the desired location of the bond wires 32, for example, above the conductor elements 28. The holes 828 are sized to receive the capillary 804 of the weld head unit therein such that the capillary can extend into the hole to a position relative to the conductor member 28 for soldering the wire 800. To the conductor element 28, a substrate 34 is formed, for example, by ball bonding or the like. In one example, the stencil may have a plurality of holes to expose unique conductor elements in the plurality of conductor elements. In another example, a plurality of conductor elements can be exposed by a single aperture of the stencil. For example, a hole would be a channel shaped opening or depression in the stencil through which a row or row of conductor elements would be exposed at the top end surface 826 of the stencil.

Next, when the wire segment is pulled out to the desired length, the capillary 804 is removed vertically from the hole 828. Once through the aperture 828, the wire segment is clamped within the weld head unit, for example, clamped by the clamp 803; and the capillary 804 is in a lateral direction (e.g., parallel to the surface 826 of the stencil 824). Medium movement for moving the wire segment 800 to contact the edge of the stencil 824 defined by the intersection of the surface of the hole 828 with the outer surface 826 of the stencil 824 829. This movement causes the bond wire 32 to separate from the remainder of the wire segment 800 that is still held within the capillary 804. This process is repeated to form the desired number of bond wires 32 in the desired location. In one mode of operation, the capillary is moved vertically prior to wire bond separation such that the remaining wire segments protrude beyond the face 806 of the capillary 804 by a distance 802 that is sufficient to form a continuous solder ball. Figure 34B shows a variation of the stencil 824 in which the holes 828 are tapered such that their diameter increases from a first diameter at the surface 826 to a larger diameter away from the surface 826. In another variation, as shown in Figure 34C, the stencil will be formed with an outer frame 821 having a thickness sufficient to separate the surface 826 at a desired distance from the substrate 12. The frame 821 will at least partially surround a cavity 823 that is configured to be positioned alongside the substrate 12, the thickness of the stencil 824 extending between the surface 826 and the open area 823 such that when the stencil 824 is positioned on the substrate 12, Portions of the stencil 824 that include the holes 828 are spaced from the substrate 12.

20A to C are a technique that can be used by molding to form the encapsulation layer so that the unencapsulated portion 39 (Fig. 1) of the bonding wires protrudes beyond the surface of the encapsulation layer 42. 44. Thus, as seen in Figure 20A, a thin film assisted die casting technique can be used to place a temporary film 1102 between a flat plate 1110 of a mold and a cavity 1112, a bond wire comprising the substrate, bonded thereto A subassembly of 1132, and a component (eg, a microelectronic component) can be bonded into the cavity 1112. The film 1102 can be formed of ethylene-tetrafluoroethylene. The film 1102 can cover at least 10% of the length of the wire bonds and can be at least 50 microns. In one embodiment, the film 1102 can be 200 microns; however, the film can also be thicker or thinner than 200 microns. FIG. 20A further shows a second flat plate 1111 of the mold that can be disposed opposite the first flat plate 1110.

Next, as seen in FIGS. 20B through 20C, when the mold plates 1110, 1111 are combined, the end 1138 of the bonding wire 1132 protrudes into the temporary film 1102. When a mold compound flows in the cavity 1112 to form the encapsulation layer 1142, the mold compound does not contact the ends 1138 of the bonding wires because they are covered by the temporary film 1102. After this step, the mold plates 1110, 1111 are removed from the encapsulation layer 1142, and the temporary film 1102 is now removed from the mold surface 1144, which will maintain the end 1138 of the bond wire 1132. Beyond the surface 1144 of the encapsulation layer.

Thin film assisted die casting techniques can also be adapted for mass production. For example, in one example of the process, a portion of a continuous sheet of the temporary film is applied to the mold plate. The encapsulation layer will then be formed in a cavity 1112 defined at least in part by the mold plate. Next, the current portion of the temporary film 1102 on the mold plate 1110 is automatically replaced by another portion of a continuous sheet of the temporary film. In a variation of the film-assisted molding technique, it is not necessary to use a removable film as described above. Instead, a water-soluble film is placed on the mold plate 1110 before forming the encapsulation layer. On the inner surface. When the mold plates are removed, the water soluble film can be removed by rinsing, and the ends of the wire are maintained to protrude beyond the surface 1144 of the encapsulation layer as described above.

In an example of the method of FIGS. 20A-B, the height of the bonding wires 1132 above the surface 1144 of the encapsulation layer 1142 is not the same in the bonding wires 1132, as shown in FIG. 37A. A method for further processing the package 1110 such that the bond wire 1132 protrudes substantially above the surface 1142 is shown in Figures 37B-D and utilizes a sacrificial material layer 1178 that can be applied to the surface by applying it Above the 1144 is formed to cover the unencapsulated portions of the bonding wires 1132. The sacrificial layer 1178 is then planarized to reduce its height to the bond wire The desired height of 1132 can be achieved by grinding, milling, polishing, or the like. As also shown, the planarization of the sacrificial layer 1178 will begin by lowering its height to a point where the bond wire 1132 becomes bare at the surface of the sacrificial layer 1178. The planarization process is then also synchronized to the sacrificial layer 1178 to planarize the bond wires 1132 such that as the height of the sacrificial layer 1178 continues to decrease, the height of the bond wires 1132 also decreases. Once the desired height of the bond wire 1132 is reached, the planarization stops. It should be noted that in this process, the height at which the bonding wires 1132 are initially formed is not uniform, but their heights are all greater than the target uniform height. After planarizing the drop wire 1132 to a desired height, the sacrificial layer 1178 is removed, for example, by etching or the like. The sacrificial layer 1178 can be formed from a material that can be removed by etchant etching that does not significantly affect the encapsulating material. In one example, the sacrificial layer 1178 can be made of a water soluble plastic material.

The method shown in Figures 21A and 21B is capable of forming another method of projecting the unencapsulated portion of the bond wire that extends beyond a surface of the encapsulation layer. Thus, in the example seen in FIG. 21A, initially, bond wire 1232 may be flush with surface 1244 of encapsulation layer 1242, or may even be absent from surface 1244 of encapsulation layer 1242. Next, as shown in FIG. 21B, a portion of the encapsulation layer (eg, the molded encapsulation layer) is removed to cause the end 1238 to protrude beyond the modified encapsulation surface 1246. Thus, in one example, laser ablation will be used to evenly dent the envelope layer to form a flat recessed surface 1246. Alternatively, laser ablation can be selectively performed in a plurality of regions of the encapsulation layer that are adjacent to the unique bond wire.

Other techniques that can be used to selectively remove at least a portion of the encapsulation layer based on the bond wires include "wet blasting" techniques. In wet blasting, a flow of abrasive particles carried by a liquid medium is directed toward a target from which the target is directed The material is removed from the surface of the object. The particle stream can sometimes incorporate a chemical etchant that can assist or accelerate the selective removal of materials based on other structures (e.g., weld lines that are desired to remain after wet jet blasting).

In the example shown in Figures 38A and 38B, in a variation of the method illustrated in Figures 21A and 21B, wire bond loop 1232' will be formed such that substrate 1234a is on conductor element 1228 at one of its ends and Attached to a surface of the microelectronic element 1222 at the other end 1234b. To attach wire bond loop 1232' to microelectronic element 1222, the surface of microelectronic element 1223 can be metallized, for example, by sputtering, chemical vapor deposition, electroplating, or the like. Substrate 1234a can be ball bonded (as shown) or edge welded as bonded to end 1234b of microelectronic element 1222. As further shown in FIG. 38A, a dielectric encapsulation layer 1242 can be formed over the substrate 1212 to cover the wire bond loops 1232'. The encapsulation layer 1242 is then planarized (eg, by milling, grinding, polishing, or the like) to reduce its height and to divide the wire bond loops 1232' into bond wires 1232A. As well as the heat dissipation solder joint 1232B, the bond wire 1232A can be used to bond to at least its end surface 1238 for electrical connection to the conductor element 1228, while the heat dissipation solder joint 1232B is bonded to the microelectronic element 1222. The heat dissipating solder joints may be such that they are not electrically connected to any circuitry of the microelectronic component 1222 and are positioned to conduct heat away from the microelectronic component 1222 to the surface 1244 of the encapsulation layer 1242. Additional processing methods will be applied to the package 1210' generated as described elsewhere herein.

A further method of forming an encapsulating layer by die casting as shown in Figures 22A through 22E, wherein the unencapsulated portion of the bonding wire projects through the encapsulating layer. As shown in FIG. 22A, a plurality of bonding wires 1302 are molded on a substrate 1304. The bonding wires 1302 may include a wire 1306 And a substrate 1308, which can be connected to a conductor element, such as an electroless nickel electroless Palladium Immersion Gold (ENEPIG) material. The wire 1306 can be formed from a material comprising copper or a copper alloy. For example, a raised material region 1310 (eg, a bank) may be formed at or above the face 1312 of the semiconductor region along the perimeter of the face 1312 of the substrate 1304, and the bond wires 1302 are positioned The area 1310 is delimited or is at least partially bordered. In a particular example, region 1310 can be formed from an imageable material, such as a solder mask.

As shown in FIG. 22B, a hardened layer 1314 (which in one case may be referred to as wire lock material 1314) may be disposed on face 1312 of substrate 1304 and fully or at least partially incorporated by region 1310. In this manner, region 1310 can at least partially define an area in which wire securing material is to be provided on surface 1312. The length of the wires will be as described above, and in a particular example, the length of each wire 1306 can be in the approximate range of 150 to 200 microns. In one example, the wire lock material 1314 can be dispensed and dispensed using a spin-on process. When deposited, the wire securing material 1314 can cover a portion of the wire 1306 that extends a distance from the face 1312 of the substrate 1304. For example, the locking material can cover about 50 microns or approximately four the length of the wire. One to one third. The wire lock material 1314 increases the stiffness or rigidity of the wire 1306, preventing the wire from being bent or bent. In one example, the wire lock material can be a liquid encapsulant filled with cerium oxide, typically having a hardness greater than equivalent without any filled encapsulant, such as the encapsulant under the trade name NoSWEEPTM.

As shown in Figure 22C, when an encapsulation is formed, the wires 1306 can be inserted into a removable film 1316 that can be the same or similar to the temporary film 1102 described above with respect to Figures 20A-20C and It can be formed from ethylene-tetrafluoroethylene. In one embodiment, the film 1316 can cover at least 10% of the length of the wire bonds and can be at least 50 microns. In one embodiment, the film 1316 can have a thickness of 200 microns; however, the film thickness can also be greater or less than 200 microns. For example, during formation of the encapsulation layer 42 as described above, the film 1316 prevents the end portion 1306e of the wire 1306 from being covered by a second material (eg, a molding compound or other encapsulant 1318).

As described above with respect to Figures 20A and 20B and as shown in Figure 22D, the encapsulant 1318 can be deposited within or within the internal cavity of the mold in which the placement has been placed. The substrate and the attached wire are also provided with a film 1316 similar to the film 1102 shown in Figures 20A-20C. Reinforcing and hardening the wires 1306 by depositing the wire securing material 1314 around a portion of the wires facilitates penetration of the wires 1306 into the film 1316 such that the wires move less than otherwise. The move achieved. After depositing the encapsulant 1318 to cover a portion of the wires 1306, the film 1316 can be removed to expose the ends 1306e of the wires to form the microelectronic assembly 1302, as seen in Figure 22E.

Another method for forming the bonding wire 2632 to a preset height is shown in Figs. 39A to C. In this method, a sacrificial encapsulation layer 2678 will be formed over the surface 2614 of the substrate 2612, at least in its second region 2620. The sacrificial layer 2678 is also formed over the first region 2618 of the substrate 2612 to cover the microelectronic element 2622 in a manner similar to the encapsulation layer described above with respect to FIG. The sacrificial layer 2678 includes at least one opening 2679 and, in some embodiments, a plurality of openings 2679 for exposing the conductor elements 2628. The openings 2679 may be formed during the molding of the sacrificial layer 2678 by etching, drilling, or the like or after molding. In one embodiment, a large opening 2679 is formed to expose all of the conductor elements 2628; In other embodiments, a plurality of large openings 2679 are formed to expose a plurality of individual conductor elements 2628. In a further embodiment, the opening 2679 will be formed to correspond to a unique conductor element 2628. The sacrificial layer 2678 is formed with a surface 2677 at a desired height of the bonding wires 2632 so that the bonding wires 2632 can be soldered to the conductor element 2628 and then pulled out of the wire to reach the sacrificial layer. The surface 2677 of 2678 is formed. The wire bonds are then pulled laterally out of the opening for stacking over a portion of the surface 2677 of the sacrificial layer 2678. The capillary of the weld-forming instrument (e.g., capillary 804 as shown in Figure 14) is moved to squeeze the wire segment to contact surface 2677, such that it is on the wire between surface 2677 and the capillary. The pressure will cause the wire to be severed on surface 2677, as shown in Figure 39A.

The sacrificial layer 2678 is then removed by etching or another similar process. In one example, the sacrificial layer 2678 can be formed from a water soluble plastic material such that it can be removed by exposure to water without affecting other components of the unit 2610. In an embodiment, the sacrificial layer 2678 can be made of an imageable material (eg, photoresist) such that it can be removed by exposure to a light source. A portion of the sacrificial layer 2678' remains in the microelectronics. Between element 2622 and surface 2614 of substrate 2612, which can serve as an underfill layer surrounding solder ball 2652. After removal of sacrificial layer 2678, an encapsulation layer 2642 can be formed over the in-process cell for formation The package 2610. The encapsulation layer 2642 will be similar to the encapsulation layer described above and will substantially cover the surface 2614 of the substrate 2612 and the microelectronic element 2622. The encapsulation layer 2642 will further support and separate the bonding wires 2632. In package 2610 shown in 39C, the bond wires comprise a portion of edge surface 2637 that is exposed at surface 2644 of encapsulant 2642 and extends substantially parallel thereto. In other embodiments, the bond wires 2632 and The capsule 2642 is planarized to a surface 2644 is formed, a bonding wire will end surface exposed thereon, and And in fact it is flush with it.

The above-described embodiments and modifications of the present invention can be combined in other ways than those explicitly described above. The invention is intended to cover all modifications that fall within the scope and spirit of the invention.

10‧‧‧Microelectronic components

12‧‧‧Substrate

14‧‧‧ first surface

16‧‧‧ second surface

18‧‧‧First District

20‧‧‧Second District

22‧‧‧Microelectronic components

24‧‧‧welding line

28‧‧‧Conductor components

30‧‧‧ touch pads

32‧‧‧welding line

34‧‧‧Base

End of 36‧‧‧

37‧‧‧Edge surface

38‧‧‧End surface

39‧‧‧Unenclosed part

40‧‧‧Second conductor element

41‧‧‧through hole

42‧‧‧encapsulated layer

44‧‧‧ main surface

Claims (42)

A method of forming a plurality of bond wires connected to a substrate, comprising: (a) positioning at least one of: a soldering fixture and a portion of a wire extending downwardly beyond one side; or, relative to each other Positioning a forming surface such that an end of the wire portion extending downward beyond one of the welding jigs is positioned such that it is spaced apart from the welding jig surface by a depth greater than a depth from the forming surface; (b) The first forming surface moves the welding fixture in a first direction parallel to the face of the welding fixture to bend the wire portion toward the welding fixture; (c) then transversely to the welding Moving the welding fixture in a second direction of the surface, such that a bare wall of the welding fixture extending away from the welding fixture surface faces a second forming surface extending away from the first forming surface, thereby The bare wall of the welding jig bends the wire portion; (d) casting a portion of the wire portion between the welding jig face and a casting surface; (e) welding the wire with the welding jig Part of the cast Portioning a conductive bonding surface to the substrate to form a bonding wire while leaving the end of the wire portion remote from the cast portion unwelded; and (f) repeating steps (a) through (e) to form A plurality of the bonding wires to at least one of the soldering surfaces. The method of claim 1, wherein the casting surface comprises a groove having a depth smaller than a diameter of the wire portion, and the casting of the wire portion is implemented to fit the groove of the casting surface for casting The portion of the wire portion. The method of claim 1, wherein the welding treatment has a capillary tube extending to the outside of the capillary tube, and the welding fixture surface is the capillary surface. The method of claim 1, wherein the welding fixture is a wedge welding fixture. The method of claim 1, wherein the welding fixture and the forming surfaces are assembled to a common welding head. The method of claim 5, wherein the first forming surface and the second forming surface are disposed at a forming station and at least steps (b), (c) are performed at the forming station, and At least step (e) is carried out at a welding station, wherein the welding fixture is supported by a welding head, and the method further comprises welding the welding head and the welding fixture supported thereby before the step (d) Moving from the forming station to the welding station. The method of claim 5, wherein the casting surface is disposed at the forming station, and step (d) is performed at the forming station. The method of claim 1, wherein the wire portion is a first wire portion, and wherein the step (a) the first wire portion extends by welding a second portion of the wire to a second weld The surface is implemented, and then the welding fixture surface is moved to a greater height above the plane in which the second welding surface is located, such that the first wire portion extends outward beyond the face of the welding fixture, and then cut The wire is broken to separate the first wire portion from the second wire portion. The method of claim 8, wherein the step of cutting the wire comprises clamping the wire and tightening the wire of the clamp so that the wire of the clamp is between the first wire portions Breaking at the boundary with the second wire portion. The method of claim 8, wherein cutting the wire comprises clamping the wire and tightening the wire of the clamp to allow the wire of the clamp to break at a predetermined length. According to the method of claim 8, wherein the cutting comprises a clamp and tightening the plurality Wires to allow the clamped wires to break at a plurality of different preset lengths. The method of claim 1, wherein the second forming surface and the first forming surface are inclined away from the first forming surface at a first angle, and the bare welding fixture wall is inclined away from the first angle The welding fixture surface. The method of claim 1, wherein the second forming surface is a channel that is recessed relative to the at least one third surface. The method of claim 1, wherein the step (d) forms the cast portion which is prevented from moving in the lateral direction when the step (e) is performed to weld the wire portion to the soldering surface. The method of claim 1, wherein the step (d) forms the cast portion that prevents rolling in the transverse direction when the step (e) is performed to weld the wire portion to the soldering surface. The method of claim 14, wherein the cast portion of the wire portion has a flat surface, and step (e) welds the flat surface of the cast portion to the weld surface. The method of claim 14, wherein the cast portion of the wire portion has a patterned surface composed of a raised feature and a recessed feature, and step (e) of the cast portion The patterned face is welded to the welded surface. The method of claim 3, wherein the capillary face has a groove, and the casting cooperates with the groove and the capillary face to cast the portion of the wire portion. The method of claim 18, wherein the casting surface comprises a groove having a depth smaller than a diameter of the wire portion, and the casting of the wire portion is implemented to match The groove of the casting surface casts the portion of the wire portion. The method of claim 1, wherein the first forming surface comprises a groove, and the step (b) comprises moving the welding jig surface in the first direction along a length of the groove, such that At least a portion of the wire portion moves within the groove. The method of claim 1, further comprising forming an encapsulation layer over the one or more soldering surfaces after step (f), wherein the encapsulating layer is formed to at least partially Covering the soldering surface and the bonding wires such that an unencapsulated portion of each bonding wire is in an end surface of the bonding wire or an edge surface of the bonding wire not covered by the encapsulating layer At least one of the parts is defined. The method of claim 1, wherein the first forming surface is a surface of a forming element having an opening therein, wherein the step (a) comprises positioning the welding jig such that the wire portion extends at least partially to the surface In the opening. The method of claim 22, wherein the opening comprises a tapered portion adjacent to the first forming surface, the tapered portion being configured to guide the wire portion toward the first forming surface Preset location. The method of claim 22, wherein the first forming surface is a surface of a forming element having an opening therein, wherein the step (a) comprises positioning the welding jig such that the wire portion extends at least partially to the surface And wherein the opening includes a tapered portion adjacent to the first forming surface, the tapered portion being configured to guide the wire portion into the groove. The method of claim 1, wherein the first forming surface is a surface of an forming element having an opening therein, wherein the step (c) comprises moving the welding jig to the opening Among the mouths, the wire extends at least partially into the opening. The method of claim 25, wherein the casting surface is disposed inside the opening. The method of claim 22, wherein the opening is a first opening, and the forming element comprises a second opening, wherein the step (c) comprises moving the welding fixture into the second opening, The wire causes the wire portion to extend at least partially into the second opening. The method of claim 27, wherein the casting surface is disposed inside the second opening. The method of claim 1, wherein a first one of the bonding wires is adapted to carry a first signal potential, and a second one of the bonding wires is adapted The signal is used to synchronously carry a second signal potential different from the first signal potential. The method of claim 1, wherein when the step (e) is performed to weld the casting surface to the soldering surface, the soldering surface is exposed at a surface of a substrate. The method of claim 25, further comprising: mounting and electrically interconnecting a microelectronic component with the substrate such that the microelectronic component is electrically interconnected with at least a portion of the bonding wires. The method of claim 1, wherein at least two of the plurality of bonding wires are soldered to a single one of the plurality of bonding surfaces. A microelectronic package comprising: a member having a surface and a plurality of conductor elements positioned at the surface; a plurality of bonding wires having a first end bonded to the conductor elements and away from the plurality of a second end of one end, the length of the bonding wires being between its individual first end and second end; a dielectric hardened layer superposed over the conductive elements and the surface and covering a first portion of the length of each of the bonding wires; and an encapsulating layer overlying the surface of the member and An encapsulating layer is also hard over the dielectric hardened layer and covering a second portion of the length of each of the bonding wires, wherein the second ends of the bonding wires are on the dielectric hardened layer and away from the dielectric At least a portion of the surface of the encapsulation layer of the hardened layer is not covered by the encapsulation layer. A microelectronic package according to claim 33, wherein the member is a substrate. A microelectronic package according to claim 33, further comprising a raised material region other than the encapsulant and the dielectric hardened layer, the raised material region (i) extending from a surface of the member At least partially adjoining the dielectric hardened layer upwardly and at least in a direction parallel to a surface of the member, and (ii) at least partially abutting the surface of the member, the first ends of the bonding wires are respectively bonded to the conductive elements The area. The microelectronic package of claim 33, wherein the dielectric hard layer covers at least 10% of the length of the bonding wires. The microelectronic package of claim 33, wherein the dielectric hardened layer covers at least 50 microns of the length of the bonding wires. A microelectronic package according to claim 33, wherein each of the bonding wires is tailor welded to one of the conductor elements. The microelectronic package of claim 33, wherein the soldering wires have soldering fixture marks adjacent to the second ends of the bonding wires. The microelectronic package of claim 39, wherein the bonding wires are tapered in at least one of the directions adjacent to the second ends of the bonding wires. The microelectronic package of claim 39, wherein the welding fixture is labeled as a spherical region. The microelectronic package of claim 33, wherein the second ends of the bonding wires protrude away from the encapsulation layer at an angle of 65 to 90 degrees from a plane defined by the surface of the encapsulation layer.