JP3767512B2 - Wire bonding method - Google Patents
Wire bonding method Download PDFInfo
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- JP3767512B2 JP3767512B2 JP2002124342A JP2002124342A JP3767512B2 JP 3767512 B2 JP3767512 B2 JP 3767512B2 JP 2002124342 A JP2002124342 A JP 2002124342A JP 2002124342 A JP2002124342 A JP 2002124342A JP 3767512 B2 JP3767512 B2 JP 3767512B2
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Description
【0001】
【発明の属する技術分野】
本発明は、アルミニウムからなるワイヤを被ボンディング部材にボンディングするワイヤボンディング方法に関する。
【0002】
【従来の技術】
近年のIGBT、DMOSの使用の拡大に伴い、シリコン素子のコストダウンを図るため、従来デッドスペースであったボンディングパッドを廃止し、トランジスタ上のAl膜に直接ボンディングを行うようになってきている。このようなボンディングは、シリコン素子におけるセル構造を有するアクティブ部に直接ボンディングすることから、セル上ボンディングと呼ばれている。
【0003】
被ボンディング部材としてのシリコンチップのアクティブ部に、アルミニウム(Al)の太線をワイヤボンディングした例を図3、図4に示す。図4は図3中の丸で囲んだA部の拡大断面図である。
【0004】
図3に示すように、シリコンチップ200が基板210上に搭載されている。このシリコンチップ200のアクティブ部上に、例えばφ100μm以上のAl太線からなるワイヤ30が第1ボンディングされ、基板210上のパッド220に第2ボンディングされている。
【0005】
図4に示すように、アクティブ部は、例えば、ゲート電極201、ソース電極202およびドレイン電極203等を備えたトランジスタ素子が1個のセルとして複数個配列されたセル構造を有している。なお、基板210の上にはドレイン配線203aが形成されている。また、Al膜からなるソース電極202の下にはゲート電極201との絶縁を確保するための層間絶縁膜204が介在しており、この層間絶縁膜204は平坦ではなく、凹凸を持って存在している。
【0006】
そして、ワイヤ30の第1ボンディングは、このセル構造をなすアクティブ部におけるソース電極202としてのAl膜をボンディング面として行われている。
【0007】
【発明が解決しようとする課題】
ところで、上記したセルへに対してAl太線をワイヤボンディングする場合、セルへのダメージは超音波エネルギー(つまり、ボンディングツールの振幅量)が小さければ発生しない。
【0008】
しかし、セル上ボンディングでは、Al太線を上記したような凹凸を持ったAl膜上に接合しなければならないため、平面状のAl膜に対するボンディングよりも大きな超音波エネルギーが必要である。
【0009】
上記図4に示したように、Al膜としてのソース電極202下の層間絶縁膜204が凹凸形状となっているため、第1ボンディング時におけるワイヤ30の振動で層間絶縁膜204の角部に応力がかかり、層間絶縁膜204が破壊することで、リーク不良が発生する。
【0010】
本発明者の検討によれば、このようなワイヤ振動によるボンディング面の損傷は、次のようなメカニズムで主として発生することがわかった。図5は、第1ボンディングにおけるワイヤ振動の状態を示す図である。
【0011】
第2ボンディング後にカットされたワイヤ30は、ボンディングツール100とともに、ボンディング装置のワイヤガイド110によってボンディング面10に載せられる。そして、ツール100によりボンディング面10にワイヤ30を押し付け、超音波振動を与えて第1ボンディングを行う。
【0012】
このとき、ツール100の直下のワイヤ30は、押し潰されてボンディング面10と接合されるが、ツール100から外れたワイヤ30の先端部(テール部)31は延びる。ワイヤ30の接合部では、つぶれたワイヤ30が広い面積でボンディング面10に固定されているため、ツール100が振動しても局部的に応力がかからず、ボンディング面の損傷は少ない。
【0013】
しかし、ワイヤ30のテール部31は、ボンディング面10と接した状態で延び、そのときにテール部31がボンディング面10を擦る。すると、例えば、上記図4に示したようなセル構造では、ソース電極202がその下の層間絶縁膜204上をスリップして、層間絶縁膜204にダメージを与える。それにより、上記したリーク不良等が発生するのである。
【0014】
そこで、本発明は上記問題に鑑み、アルミニウムからなるワイヤを被ボンディング部材にボンディングするワイヤボンディング方法において、第1ボンディングの際に発生するワイヤテール部のボンディング面への擦りによるボンディング面の損傷を抑制することを目的とする。
【0015】
【課題を解決するための手段】
上記目的を達成するため、請求項1に記載の発明では、アルミニウムからなるワイヤ(30)を被ボンディング部材にボンディングするワイヤボンディング方法において、被ボンディング部材の第1ボンディング面(10)よりもアルミニウムとの接合性が劣るものからなり、一面(21)上に当該一面より突出する突起部(23)を有する低接合性部材(20)を用意し、第1ボンディングの前に、ワイヤのうちテール部(31)が突起部に接触するように、ワイヤを低接合性部材の一面上に押しつけることにより、ワイヤにおいてテール部が上方に曲がった形状を形成することを特徴とする。
【0016】
それによれば、第1ボンディングの前に、ワイヤにおいてテール部が上方に曲がった形状となるため、続いて、第1ボンディングを行うにあたり、ワイヤを被ボンディング部材の第1ボンディング面に押し付けた際には、ボンディング面にはテール部は接しない。
【0017】
そのため、この状態で超音波振動を与えて第1ボンディングを行っても、ワイヤテール部のボンディング面への擦りが生じないことから、ボンディング面の損傷を抑制することができる。
【0018】
なお、上記各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。
【0019】
【発明の実施の形態】
以下、本発明を図に示す実施形態について説明する。図1(a)〜(c)は、本発明の実施形態に係るワイヤボンディング方法を工程順に示す工程図である。本ワイヤボンディング方法は、ワイヤとしてAl線を用いたものであり、限定するものではないが、上記図3、図4に示したようなセル上ボンディングに適用可能である。
【0020】
図1において、第1ボンディング面10は、例えば基板に搭載されたシリコンチップのアクティブ部におけるAl膜(上記図4参照)であり、図示しないが、第2ボンディング面は、例えば基板上のパッドである。次に、本実施形態のワイヤボンディング方法について述べる。
【0021】
まず、図1(a)に示すように、被ボンディング部材のボンディング面、ここでは第1ボンディング面10よりもAlとの接合性が劣るものからなる低接合性部材20を用意する。この低接合性部材20はAlワイヤ30との接合が困難な材料、例えばセラミック、樹脂、Fe、Mo、W等の金属等といった材料から形成されたものである。
【0022】
また、低接合性部材20は、その一面21上に平坦部22およびこの平坦部22より突出する突起部23を有する。このような低接合性部材20は、ボンディング時に被ボンディング部材を搭載支持する基板、各種ケース、治具等を用いることができる。
【0023】
また、図1に示されるボンディングツール100およびワイヤガイド110は、ワイヤボンディング装置に備えられたもので、これら両者100、110は一体に移動するようになっている。
【0024】
ボンディングツール100は、ワイヤ30の一部が入り込むことのできるツール溝を有し、この溝部分にてワイヤ30を押し付けてワイヤ30に超音波振動を与え、ワイヤ30を接合するものである。
【0025】
ワイヤガイド110は、筒状部材の中にワイヤ30が挿入され、ワイヤ30を支持しつつ移動させるものである。ワイヤガイド110に挿入されたワイヤ30は、ワイヤガイド110に固定されているのではなく、ワイヤガイド110内を摺動可能になっている。
【0026】
そして、第1ボンディングを行う前に、図1(a)に示すように、ボンディングツール100によって、ワイヤ30を低接合性部材20の一面21上に下降させていく。
【0027】
次に、図1(b)に示すように、ボンディングツール100によって超音波パワーは印加せずに荷重(図中の白抜き矢印にて図示)だけをワイヤ30に加えることにより、ワイヤ30のうちテール部31が突起部23に接触するように、ワイヤ30を低接合性部材20の一面21上に押しつける。
【0028】
これによって、本例では、ワイヤ30のうちテール部31が突起部23に接触し、ワイヤ30のうち突起部23との接触部からヒール部32までの間の部分が平坦部22に接触する。それにより、ワイヤ30においてテール部31が上方に曲がった形状が形成される。
【0029】
続いて、ボンディングツール100およびワイヤガイド110とともにワイヤ30を、低接合性部材20から引き上げ、図1(c)に示すように、第1ボンディングを行う。
【0030】
ボンディングツール100によって、ワイヤ30を第1ボンディング面10に押し付け、超音波パワーおよび荷重を加えることで、第1ボンディング面10とワイヤ30とを接合する。このとき、ワイヤ30においてテール部31が上方に曲がった形状となっている。
【0031】
そのため、ワイヤ30を第1ボンディング面10に押し付けた際には、第1ボンディング面10にはテール部31は接しない。そのため、この状態で超音波振動を与えて第1ボンディングを行っても、テール部31のボンディング面10への擦りが生じないことから、ボンディング面10の損傷を抑制することができる。
【0032】
そして、第1ボンディングを行った後、第1ボンディング部からワイヤ30を繰り出して第2ボンディング面まで引き回し、第2ボンディングを行う。以上の一連の動作が本実施形態のワイヤボンディング方法である。
【0033】
ここで、本ワイヤボンディング方法において、ワイヤ30を低接合性部材20の一面21上に押しつけるとき、テール部31が短すぎて突起部23に接触しないことが無いように、テール部31の長さをある程度長くしたり、または、突起部23の位置を調節して設けることが必要である。
【0034】
また、ワイヤ30は低接合性部材20の一面21に接触した後、この接触部にて第1ボンディングが行われるため、低接合性部材20の一面21における平坦部22は、ワイヤ30の接触面を汚さないように清浄であり且つ平坦性を確保したものとし、第1ボンディングの接合性が劣化しないようにすることが必要である。
【0035】
図2は、本実施形態の変形例を示す図である。本変形例では、低接合性部材20の一面21において、ワイヤ30のテール部31、ヒール部32に対応して突起部23を2個設けたものである。
【0036】
この場合、ワイヤ30を低接合性部材20の一面21上に押しつけると、テール部31が上方に曲がるとともに、ヒール部32も若干上方に曲がる。すると、ワイヤ30におけるテール部31とヒール部32との間が、やや下方に湾曲した形状となる。
【0037】
そのようなワイヤ30の湾曲形状によれば、ボンディングツール100のツール溝へのワイヤ30の入り込みは、テール部31側とヒール部32側とでしっかりと確保される。そのため、ワイヤ30がツール溝から外れることをより効果的に防止できる。
【0038】
以上、本実施形態によれば、第1ボンディングの際にテール部31のボンディング面10への擦りが生じないことから、ボンディング面10の損傷を抑制することができるため、本ワイヤボンディング方法は、ボンディング面が弱く損傷を受けやすいセル上ボンディングに好適に用いることができる。
【0039】
なお、低接合性部材20は、被ボンディング部材とは別体の部材でなくとも良く、可能ならば、被ボンディング部材におけるボンディング面以外の面であっても良い。
【図面の簡単な説明】
【図1】本発明の実施形態に係るワイヤボンディング方法を示す工程図である。
【図2】上記実施形態の変形例を示す図である。
【図3】シリコンチップのアクティブ部にアルミニウム太線をワイヤボンディングした例を示す図である。
【図4】図3中のA部拡大断面図である。
【図5】第1ボンディングにおけるワイヤ振動の状態を示す図である。
【符号の説明】
10…第1ボンディング面、20…低接合性部材、
21…低接合性部材の一面、23…突起部、30…ワイヤ、31…テール部。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wire bonding method for bonding a wire made of aluminum to a member to be bonded.
[0002]
[Prior art]
With the recent expansion of the use of IGBTs and DMOSs, in order to reduce the cost of silicon elements, bonding pads, which have conventionally been a dead space, are abolished, and bonding is directly performed on Al films on transistors. Such bonding is called on-cell bonding because it is directly bonded to an active portion having a cell structure in a silicon element.
[0003]
FIGS. 3 and 4 show an example in which a thick wire of aluminum (Al) is wire-bonded to an active portion of a silicon chip as a member to be bonded. 4 is an enlarged cross-sectional view of a portion A surrounded by a circle in FIG.
[0004]
As shown in FIG. 3, the
[0005]
As shown in FIG. 4, the active part has a cell structure in which, for example, a plurality of transistor elements each including a gate electrode 201, a
[0006]
The first bonding of the
[0007]
[Problems to be solved by the invention]
By the way, when the Al thick wire is wire bonded to the above-described cell, damage to the cell does not occur if the ultrasonic energy (that is, the amplitude amount of the bonding tool) is small.
[0008]
However, in the on-cell bonding, the Al thick wire must be bonded onto the Al film having the above-described unevenness, and therefore, ultrasonic energy larger than that for bonding to the planar Al film is required.
[0009]
As shown in FIG. 4 above, since the interlayer insulating film 204 under the
[0010]
According to the study by the present inventor, it has been found that damage to the bonding surface due to such wire vibration mainly occurs by the following mechanism. FIG. 5 is a diagram illustrating a state of wire vibration in the first bonding.
[0011]
The
[0012]
At this time, the
[0013]
However, the
[0014]
Therefore, in view of the above problems, the present invention suppresses damage to the bonding surface due to rubbing of the wire tail portion on the bonding surface, which occurs during the first bonding, in the wire bonding method for bonding a wire made of aluminum to a member to be bonded. The purpose is to do.
[0015]
[Means for Solving the Problems]
In order to achieve the above object, according to the first aspect of the present invention, in a wire bonding method for bonding a wire (30) made of aluminum to a member to be bonded, the aluminum is bonded to the first bonding surface (10) of the member to be bonded. The low bondability member (20) having a protrusion (23) protruding from the one surface (21) is prepared on the one surface (21), and the tail portion of the wire before the first bonding is prepared. By pressing the wire onto one surface of the low bondability member so that (31) contacts the protrusion, the wire has a shape in which the tail portion is bent upward.
[0016]
According to this, since the tail portion of the wire is bent upward before the first bonding, when the wire is pressed against the first bonding surface of the member to be bonded, the first bonding is subsequently performed. The tail part does not contact the bonding surface.
[0017]
Therefore, even when the first bonding is performed by applying ultrasonic vibration in this state, the wire tail portion is not rubbed against the bonding surface, and thus the bonding surface can be prevented from being damaged.
[0018]
In addition, the code | symbol in the bracket | parenthesis of each said means is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments shown in the drawings will be described below. 1A to 1C are process diagrams illustrating a wire bonding method according to an embodiment of the present invention in the order of processes. This wire bonding method uses Al wire as a wire, and is not limited, but can be applied to on-cell bonding as shown in FIGS.
[0020]
In FIG. 1, a
[0021]
First, as shown in FIG. 1A, a low-bonding
[0022]
Further, the
[0023]
Further, the
[0024]
The
[0025]
The
[0026]
Then, before performing the first bonding, the
[0027]
Next, as shown in FIG. 1 (b), the ultrasonic power is not applied by the
[0028]
Thus, in this example, the
[0029]
Subsequently, the
[0030]
The
[0031]
Therefore, when the
[0032]
Then, after performing the first bonding, the
[0033]
Here, in this wire bonding method, when the
[0034]
Further, after the
[0035]
FIG. 2 is a diagram illustrating a modification of the present embodiment. In the present modification, two
[0036]
In this case, when the
[0037]
According to such a curved shape of the
[0038]
As described above, according to the present embodiment, since the rubbing to the
[0039]
The
[Brief description of the drawings]
FIG. 1 is a process diagram showing a wire bonding method according to an embodiment of the present invention.
FIG. 2 is a diagram showing a modification of the embodiment.
FIG. 3 is a view showing an example in which an aluminum thick wire is wire-bonded to an active portion of a silicon chip.
4 is an enlarged cross-sectional view of a part A in FIG.
FIG. 5 is a diagram showing a state of wire vibration in the first bonding.
[Explanation of symbols]
10 ... 1st bonding surface, 20 ... Low bondability member,
21: One surface of a low-bonding member, 23: Projection, 30 ... Wire, 31 ... Tail.
Claims (1)
前記被ボンディング部材の第1ボンディング面(10)よりもアルミニウムとの接合性が劣るものからなり、一面(21)上に当該一面より突出する突起部(23)を有する低接合性部材(20)を用意し、
第1ボンディングの前に、前記ワイヤのうちテール部(31)が前記突起部に接触するように、前記ワイヤを前記低接合性部材の一面上に押しつけることにより、前記ワイヤにおいて前記テール部が上方に曲がった形状を形成することを特徴とするワイヤボンディング方法。In a wire bonding method for bonding a wire (30) made of aluminum to a member to be bonded,
The low bonding property member (20) having a bonding property with aluminum lower than that of the first bonding surface (10) of the member to be bonded, and having a protrusion (23) protruding from the one surface on the one surface (21). Prepare
Before the first bonding, the wire is pressed onto one surface of the low-bonding member so that the tail portion (31) of the wire comes into contact with the protrusion, so that the tail portion of the wire moves upward. A wire bonding method characterized by forming a bent shape.
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