JPS61102745A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61102745A
JPS61102745A JP59224082A JP22408284A JPS61102745A JP S61102745 A JPS61102745 A JP S61102745A JP 59224082 A JP59224082 A JP 59224082A JP 22408284 A JP22408284 A JP 22408284A JP S61102745 A JPS61102745 A JP S61102745A
Authority
JP
Japan
Prior art keywords
bonding
bonding wire
length
pad electrode
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59224082A
Other languages
English (en)
Inventor
Shunzaburo Kako
加来　俊三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59224082A priority Critical patent/JPS61102745A/ja
Publication of JPS61102745A publication Critical patent/JPS61102745A/ja
Pending legal-status Critical Current

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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［発明の技術分野］ 本発明は、半導体素子のボンディングパッド電極（以ト
バッド電極と呼ぶ）とボンディング線との接合部の構造
に関するもので、特に樹脂刺止形の電源用整流素子等の
半導体装置に使用される。
［発明の技術的背狽］ 半導体素子のパッド電極にボンディング線を接合するの
に熱１１着法、超音波ボンディング法等が用いられる。
　超音波ボンディング法は固相接合の一秤で、超音波振
動エネルギーで１８合面の不純物を除去して新鮮な２つ
の金属面を圧接させる方法で、常温加工が可能な特徴を
有する。　この７．３音波ボンデイング法によりパッド
電極にワイヤボンディングした場合の接合の構造の従来
例について以下説明する。　第３図は従来の電源用整流
素子等の半導体装置にお（プる半導体素子のパッド電極
（アルミニウム）とボンディング線（アルミニウム）と
の接合の構造例を示すもので、第３図＜ａ　＞、（ｂ）
はそれぞれワイヤボンディングされた半導体素子の平面
図および側面図である。
第２図（ａ　）、（ｂ）はそれぞれ接合部のボンディン
グ線のつぶし長さおよびつぶし幅の範囲を図示した接合
部拡大図である。　１は素子基台、２は半導Ｉ＊素子（
この例では整流素子）、２ａは半導体素子のボンディン
グパッド電極（アルミニウム）、３は素子基台１ど半導
体素子２とを接合（）る半田、４は外部リード、５はパ
ッド電ｇＢ　２　ａと外部リード４とを接続するボンデ
ィング線（７′ルミニウム）である。
祁昌波ボンディング法では接合部のボンディング線５（
よ塑１１変形しパッド電１ル２ａと接合づる。
この塑ｔ’を変形は、ボンディング針の形状、ボンディ
ング間中、超音波振動の菜１′１、或いは加工時間等を
変更して調整されるが、塑性変形の程度を示り弔としＣ
第２図に示すようにボンディングつぶし艮８１及びボン
ディングつぶし幅Ｗの２棒類の串を１重用する。　に釆
の半導体素子のパッド電極どボン７Ｃング線との接合て
゛はボンディングつぶし長さ［かボンｉ゛イング線の直
？Ｉ’　Ｄの　１．５〜２．０１８になる０のが使用さ
れでいる。
］Ｉマｑ技術の問題点１ 電源用整流本了どして使用される高’Ｉ＋　＊ダマオー
トの如く使用°電流が１０数［八１を超える大きな１１
白をとる。ｂ１′に、１メいては索ｒのパ・ソド電捗と
ボン７Ｃング線との接合部の接触１１［１ｉ’ｊ及び横
方向の抵抗がメ爪７５−ひきくＥ　くなる。　すなわら
ボンディングつ、Ｓ；　Ｌ長さしがボンディング線の直
＋Ｍ　ｒ）の　１．５〜２．０借ぐある従来の（１４；
聞では、接合部の抵抗によるジＬ−ル熱等のため接合部
のオーブン（開放）不良が生じ易く、半導体装置の信頼
ｆ’ｌが；ミ激（Ｊ低下する。　例えば８効率ダイオー
ドの平均順電流ＩＣ＝２０［Ａ］とする熱疲労試験で、
ａｏｏｏ＋ｔインルの繰り返しでオーブン不良が５０％
も発生する。
当初のＩ。−２０［Ａ　］、１００００サイクル、Ａ−
ブン不良なしの目標にははるかに達せず、信頼性に問題
がある。
［発明の目的１　　　′ 本発明は、高効率ダイオードの如く使用電流が大電流（
例えばＩ、−２０［Ａ３以上）の半導体装置において、
半導体素子のパッド電極とボンディング線との接合部の
接触抵抗、横方向抵抗を無視できる程度に減少し、信頼
度の呂い例えば熱疲労試験　１００００サイクルで接合
部のＡ−プン不良０％となる接合部構造を有する半導体
に芦を（♀供することを目的とする。
［発明の概要１ 前記問題点を解決するためにはパッド電極とボンディン
グ線との接合部の接触抵抗および横方向抵抗を減少する
ことが必要である。　本発明では接合部は接合面積を広
くしかつそれにより生産性を損う口とのない構造とした
。
すなわら本発明は、半導体素子のボンディングパッド電
極と該電極に接合するボンディング線とを有する半導体
装置において、上記接合部におけるボンディング線のつ
ぶし長さがボンディング線の太さの３．０〜３　、５４
ｆｌであることを特徴とする半導体装置である。
上記のボンディング線のつぶし長さは、超音波ボンディ
ング或いはサーモソニックボンディングの際の塑Ｐ［変
形等によりつぶされた接合部のボンディング線の長さで
ありＬにて示１゜　また長さ１はボンｉ゛イング線とパ
ッド電極とが実質的に接合Ｙｒる長さにＩＪぼ等しい。
　ボンディング線の太さく直【Ｙ）をＤとＪると１−＝
（３，０〜３．５）　Ｄは多くの試行と試験の結束得ら
れたもので、Ｌが３１〕以トの場合は接合面積が小さく
オーブン不良等を生ずるＪ３それがあり、Ｌが３．５Ｄ
Ｌ；（上の場合は接触紙ｉメ【および１黄り面抵抗は充
分小となるが作業性等を４虞ししは３．５［）Ｉｌｌａ
ｘが適当ぐある。
本発明はボンディング線とパッド電極との接合部のみな
らず、所望によりボンディング線と外部リードとの接合
部に適用することも可能である。
［発明の実施例１ 高効率ダイオードの大電流特性に合わせ、素子のパッド
電極とボンディング線との接合部の接触抵抗および接合
面近傍の横方向抵抗を７！！！視できる小さい値とする
ため、接合面積を拡大する＋Ｉｉ　／（の試行をおこな
った。　その一つは第４図に示すようにボンディング線
を２本管列に使用し接合面（６を従来の面積ｐ２倍とし
た。　この素子の熱疲労試験結果は良好で、接合部のオ
ーブン不良率では本発明の接合部構造のものと特に差は
ない。　ただしボンディング線を２本使用するため作業
性が低下づる。　他の一つは第５図に示づように素子の
パッド電極とボンディング線とをステイフナ（Ｓ目ｊｃ
ｈ　）打ちで接合する構造のものである。
このスティッチ打ちではオーブン不良率では特に差はな
く良好であるがスティッチレベルが安定せずめくり強度
不足など接合歩留りが悪くなる。
第１図は本発明の半）８体表；１りの接合構造を示すも
ので、同図（ａ　）　Ｊ’ｊよび（１１）はそれぞれ平
面図および側面図てζ（りる！ｌ　　；１１２図＜ａ　
）、（ｂ）はそれＥれボンディング線のつぶし長さ１１
５よびつボし幅の範囲を承り図である。　なよ夕第１図
ないし第５図において同−Ｔ：ｆ号は同一部分をあられ
す。
本発明はボンティンクーｔＪ、ｉ！　１．Ｌ　１本ｒ接
合面積を従来のものに比し人さくしたしのである。　こ
の接合部ＬＬ植１）波ボンデインゲン大のボンディング
別の形状を改良しかつボンディング１°４・ｐを変更す
ることにより形成さ［しる。　第１表に従来の接合部と
本発明の接合部との比較の一例を示す。
第１表 注）Ｄ＝ボンディング線の径、Ｗ＝ボンディングつぶし
幅（第２図（ｂ））、Ｌ＝ボンディングつぶし長さく第
２図（ａ））、Ｓ＝接合面積−ＷＸＬ。
第１表に示すように高効率ダイオードの形式が２ＯＡの
もので本発明の接合面積は従来の壌合面積に比し約１．
６倍となり、素子のパッド電極（アルミニウム）とボン
ディング線（アルミニウム）との接合部の接触抵抗およ
び横方向抵抗は大幅に減少する。
［発明の効果］ 高効率ダイオードの２０Δ形の半導体装置について、第
１表に示す従来の接合部を′ｃ４ＴＩ′るものと本弁明
の接合部を右するものどの熱疲労−℃験におけるオープ
ン不良発生率の比較をおこなった結果の一例を第２表に
示ｉｒ０ 第２表 第２表のＲ１東よりあきらかむように本発明の半導（Ａ
菰首は接合部のＡ−ブン不良発牛率は０％で高い信頼性
を有する。　また従来の装置に比し作業１）１をそこな
うことなく歩留りを向上することができる。
【図面の簡単な説明】
第１図は本発明の半導体装置の素子のパッド電極とボン
ディング線との接合構造を承りむので同図（，１）、ｒ
；　Ｊ：、ひ（ｂ）はそれぞれ平面図および側面図、第
２図（ａ　）、（ｂ）はそれぞれ接合部のボンディング
長さおよびボンディング幅の範囲を示す拡大図、第３図
は従来の半導体装置の接合【；］ｉの構造を示すもので
同図（ａ　）および（ｂ）はされぞれ平面図および側面
図、第４図【よボンディング線２本を並列接合した試行
品の接合構造図、第５図はスティッチ打ちの試行品の接
合構造図である。 ２・・・半導体素子、　２ａ・・・半導体素子のボンデ
ィングパッド電（ニ、　５・・・ボンディング線、１−
・・・ボンディング線のつぶし長さ。 特許出願人　株式会ネ］　東　　芝 第１図 （ｄ）　　　　　　　　（ｂ） 第２図 （ａ）　　　　　　　　（ｂｌ 第３図 Ｃｄ）　　　　　　　　　（ｂ） 第４図　　　　　　　第５図

Claims (1)

    【特許請求の範囲】
  1. １　半導体素子のボンディングパッド電極と該電極に接
    合するボンディング線とを有する半導体装置において、
    上記接合部におけるボンディング線のつぶし長さがボン
    ディング線の太さの３．０〜３．５倍であることを特徴
    とする半導体装置。
JP59224082A 1984-10-26 1984-10-26 半導体装置 Pending JPS61102745A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59224082A JPS61102745A (ja) 1984-10-26 1984-10-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59224082A JPS61102745A (ja) 1984-10-26 1984-10-26 半導体装置

Publications (1)

Publication Number Publication Date
JPS61102745A true JPS61102745A (ja) 1986-05-21

Family

ID=16808275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59224082A Pending JPS61102745A (ja) 1984-10-26 1984-10-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS61102745A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009176995A (ja) * 2008-01-25 2009-08-06 Onamba Co Ltd ワンチップ搭載型ダイオード
JP2016505222A (ja) * 2013-02-01 2016-02-18 インヴェンサス・コーポレイション ワイヤボンドビアを有するマイクロ電子パッケージ、その製造方法、およびそのための補強層

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009176995A (ja) * 2008-01-25 2009-08-06 Onamba Co Ltd ワンチップ搭載型ダイオード
JP2016505222A (ja) * 2013-02-01 2016-02-18 インヴェンサス・コーポレイション ワイヤボンドビアを有するマイクロ電子パッケージ、その製造方法、およびそのための補強層

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