TWI569974B - 經親水性改質之氟化薄膜(iv) - Google Patents
經親水性改質之氟化薄膜(iv) Download PDFInfo
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- TWI569974B TWI569974B TW104138730A TW104138730A TWI569974B TW I569974 B TWI569974 B TW I569974B TW 104138730 A TW104138730 A TW 104138730A TW 104138730 A TW104138730 A TW 104138730A TW I569974 B TWI569974 B TW I569974B
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- 150000002976 peresters Chemical class 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
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Description
本發明係關於一種複合親水性多孔薄膜、一種親水性改質多孔氟聚合物支撐物之方法、一種如前述方法製造之經親水性改質之多孔氟聚合物薄膜及一種過濾流體之方法。
氟聚合物薄膜(例如,多孔PTFE薄膜)之性質,包括其機械強度、化學抗性或惰性、非黏著性、極佳介電性質、在高溫下的熱穩定性及低摩擦係數,使其對各種應用極具有吸引力。然而,對於某些應用,改質PTFE之表面而不影響其固有性質應為有利的。已努力改質PTFE薄膜之表面及化學性質,以便改良薄膜對於特定應用之適合性。舉例而言,努力包括表面塗層、摻合、高能表面改質(例如,寬波段紫外線輻射或BBUV,其中將薄膜曝露於波長250-450nm之UV輻射)及電漿處理、自由基及臭氧蝕刻、原子層沈積以及合成經改質之PTFE樣聚合物。然而,大部分努力集中於高能處理,諸如BBUV及電漿。雖然此等表面改質方法之確切機制未經報導,但其可能藉由鍵斷裂來引起自由基形成,因為已知C-C鍵強度比F-F鍵低約40%。若大部分自由基由C-C斷裂或聚合物主鏈斷裂所產生,則其可降低PTFE薄膜之機械及化學穩定性。亦已知電漿處理限於薄膜之表面,此使得其在較長時間段期間較不穩定。
前文展示存在針對以下之未滿足需求:表面改質多孔氟聚合物薄膜或支撐物以提供穩定的親水性氟聚合物多孔薄膜,且其中該表面改質不顯著影響多孔氟聚合物支撐物或所得複合多孔薄膜之機械強度。
本發明提供一種複合親水性多孔薄膜,其包含多孔氟聚合物支撐物及包含共聚物的塗層,其中該共聚物包含重複單元A及B,其中A具有下式:
且B具有式其中:該共聚物為嵌段共聚物或隨機共聚物;
n及m為該共聚物中存在的重複單元A及B之數目,其在1至約1000範圍內,其限制條件為n及m之總和等於或大於10,其中該共聚物視情況交聯。
本發明亦提供具有離子交換或螯合官能基之共聚物。
本發明之共聚物適用於改質多孔氟聚合物薄膜或支撐物之表面。
本發明進一步提供製備該等共聚物之方法及製備經親水性改質之氟聚合物薄膜之方法。
圖1描繪根據本發明之一具體實例之聚(iM6Ac-b-NPF6)及聚(iM6Ac)的GPC層析圖。
圖2說明用根據本發明之一具體實例的共聚物塗佈多孔氟聚合物支撐物並量測經塗佈之薄膜之表面張力的流程。
圖3說明用根據本發明之一具體實例之共聚物塗佈多孔氟聚合物支撐物,且交聯該共聚物,且量測經塗佈之薄膜之表面張力的流程。
根據一具體實例,本發明提供一種複合親水性多孔薄膜,其包含多孔氟聚合物支撐物及包含共聚物的塗層,其中該共聚物包含重複單元A及B,其中A具有下式:
且B具有式其中:該共聚物為嵌段共聚物或隨機共聚物;n及m為該共聚物中存在的重複單元A及B之數目,其在1至約1000範圍內,其限制條件為n及m之總和等於或大於10,其中該共聚物視情況交聯。
在本文中的化學式中,重複單元之化學式上的點線指示共聚物可為嵌段共聚物或隨機共聚物。嵌段共聚物利用圓括號指示:(重複單元)。隨機共聚物利用方括號指示:[重複單元]。
在具體實例中,n及m表示對應單體之聚合程度,且獨立地
為約10至約1000,較佳為約20至約50。
在其他具體實例中,n及m表示共聚物中存在的單體之莫耳分率,且n及m可獨立地在介於1至99莫耳%、較佳20至50莫耳%之間的範圍內。
共聚物可為嵌段共聚物或隨機共聚物。嵌段共聚物可為二嵌段(A-B)、三嵌段(A-B-A或B-A-B)或多嵌段共聚物((A-B)x)。共聚物視情況可具有第三鏈段C,例如三嵌段共聚物或隨機共聚物,諸如A-B-C。
共聚物可具有任何適合之分子量,例如在一具體實例中,數目或重量(Mn或Mw)平均分子量為約10kDa至約1000kDa,較佳為約75kDa至約500kDa,且更佳為約250kDa至約500kDa。
對應的單體嵌段可以任何適合之質量%存在於嵌段共聚物中,例如在一具體實例中,約99%:約1%至約50%:約50%,較佳約90%:約10%至約70%:約30%,且更佳約75%:約25%。
共聚物可具有任何適合之鏈末端,例如選自芳基及烷氧基、較佳苯基及乙氧基之鏈末端。
陰離子可為任何適合之陰離子,例如氟離子、氯離子、溴離子或碘離子、甲苯磺酸根、甲磺酸根、苯磺酸根、磺酸根、硫酸根、磷酸根或膦酸根。
根據一具體實例,共聚物具有下式中之一者:
本發明之共聚物可利用任何適合之方法製備,例如經由環狀
單體之開環複分解聚合(ROMP)製備。通常含有碳烯配位體之過渡金屬催化劑介導該複分解反應。
可使用任何適合之ROMP催化劑,例如可使用格拉布氏(Grubbs')第一代、第二代及第三代催化劑、優美科(Umicore)、胡偉達-格拉布(Hoveyda-Grubbs)、施羅克(Schrock)及施羅克-胡偉達(Schrock-Hoveyda)催化劑。該等催化劑之實例包括以下各者:
在一具體實例中,格拉布氏第三代催化劑由於其諸如空氣中之穩定性、對多種官能基具有耐受性及/或較快聚合起始及增長速率之優點而尤其適合。此外,用格拉布氏第三代催化劑,末端基可經工程改造以容納任何相容基團,且該催化劑可易於回收。該催化劑之一較佳實例為:
以上第三代格拉布氏催化劑(G3)可市售獲得或自格拉布氏第二代催化劑(G2)如下製備:
單體之聚合在適合之溶劑中進行,例如通常用於進行ROMP聚合的溶劑。適合之溶劑的實例包括:芳族烴,諸如苯、甲苯及二甲苯;脂族烴,諸如正戊烷、己烷及庚烷;脂環烴,諸如環己烷;以及鹵化烴,諸如二氯甲烷、二氯乙烷、二氯乙烯、四氯乙烷、氯苯、二氯苯及三氯苯,以及其混合物。
單體濃度可在1至50重量%、較佳2至45重量%、且更佳3至40重量%範圍內。
聚合可在任何適合之溫度下進行,例如-20至+100℃,較佳10至80℃。
聚合可持續任何適合於獲得各嵌段之適當鏈長的時間進行,該時間可為約1分鐘至100小時。
可以任何適合之量選擇催化劑之量。舉例而言,催化劑比單體之莫耳比可為約1:10至約1:1000,較佳約1:50至1:500,且更佳約1:100至約1:200。舉例而言,催化劑比單體之莫耳比可為1:n及1:m,其中n及m為平均聚合程度。
共聚物可利用適合之技術進行分離,例如用非溶劑沈澱。
本發明之共聚物可利用任何已知技術對其分子量及分子量分佈進行特性化。舉例而言,可採用MALS-GPC技術。該技術使用移動相,經由高壓泵,聚合物溶液經由一組用固定相填充的管柱來沖提。該固定相根據鏈尺寸分離聚合物樣品,接著利用三種不同偵測器偵測該聚合物。可採用一系列偵測器,例如紫外線偵測器(UV偵測器),後面為多角度雷射光散射偵測器(MALS偵測器),其後面又為折射率偵測器(RI偵測器)成
一列。UV偵測器量測聚合物在254nm波長下的光吸收;MALS偵測器量測相對於移動相來自聚合物鏈的散射光。
本發明之共聚物高度單分散。舉例而言,共聚物之Mw/Mn為1.05至1.5,較佳為1.1至1.2。
本發明進一步提供一種製備根據本發明之一具體實例之共聚物的方法,其包含:(i)利用開環複分解聚合(ROMP)催化劑催化,使(a)N-羥乙基外-7-氧雜降莰烯5,6-二甲醯亞胺(iM6)、(b)N-乙醯氧基乙基外-7-氧雜降莰烯5,6-二甲醯亞胺(AciM6)或(c)N-甲氧基乙基外-7-氧雜降莰烯5,6-二甲醯亞胺(M11)聚合,獲得均聚物聚(iM6)、聚(AciM6)或聚(M11);以及(ii)利用ROMP催化劑催化,在(i)中獲得之均聚物之鏈末端上依序聚合5-(全氟正己基)降莰烯或雙環[2-2-1]庚-2-烯單全氟己烷或5-(全氟正辛基)降莰烯或雙環[2-2-1]庚-2-烯單全氟辛烷。
本發明進一步提供一種製備根據本發明之另一具體實例之共聚物的方法,其包含:(i)利用ROMP催化劑催化,使N-(單甲氧基氧化三伸乙基)二甲基銨外-7-降莰烯5,6-二甲醯亞胺(QNTEG)鹽或N-(磺醯基丙基)二甲基銨外-7-降莰烯5,6-二甲醯亞胺(磺基甜菜鹼兩性離子降莰烯(Sulfobetaine Zwitterionic NorBornene;SZNB))聚合,獲得均聚物;以及(ii)利用ROMP催化劑催化,在(i)中獲得之均聚物之鏈末端上依序聚合5-(全氟正己基)降莰烯或雙環[2-2-1]庚-2-烯單全氟己烷或
5-(全氟正辛基)降莰烯或雙環[2-2-1]庚-2-烯單全氟辛烷。
單體QNTEG及SZNB可自如以下所說明之降莰烯-甲醛開始製備。中心中間體為經由還原烷化5-降莰烯-2-甲醛(用例如二甲胺進行)合成的三級胺(NMDMA)。接著用1,3-丙烷磺內酯(朝向SZNB)或用三乙二醇單甲醚之甲苯磺酸酯烷基化。此外,羧基甜菜鹼單體(carboxybetaine monomer;CZNB)可藉由用例如β-丙內酯或溴乙酸(或其酯,接著進行酯水解)烷化來合成。
在以上方法中,聚合可以適合之方式終止,例如藉由使用烷基乙烯基醚,諸如乙基乙烯基醚。
本發明進一步提供一種複合親水性薄膜,其包含多孔氟聚合物支撐物及包含上文所述之共聚物的塗層,其中該共聚物視情況交聯。
本發明進一步提供一種親水性改質氟聚合物支撐物之方法,其包含:(i)提供多孔氟聚合物支撐物;(ii)用包含溶劑及上文所述之共聚物的溶液塗佈該多孔氟聚合物支撐
物;(iii)乾燥來自(ii)之該經塗佈之支撐物,以自包含該共聚物或均聚物的溶液移除至少一些溶劑;且視情況(iv)使該經塗佈之支撐物中之該共聚物交聯。
在一具體實例中,多孔氟聚合物支撐物在用包含溶劑及共聚物的溶液塗佈其之前,用溶劑(諸如,異丙醇)預濕潤。
在一具體實例中,在介於100℃至160℃之間的溫度下乾燥經塗佈之支撐物。
圖2說明用根據本發明之一具體實例之共聚物塗佈多孔氟聚合物支撐物的製程。圖3說明使根據本發明之一具體實例之多孔氟聚合物支撐物上之塗層交聯的方法。
交聯可利用任何適合之方法進行,例如藉由使用光引發劑及高能輻射(例如UV)進行。預期該交聯在薄膜中提供高度穩定聚合物網狀結構。
可使用任何適合之光引發劑,例如I型及II型光引發劑。光引發劑之實例包括樟腦醌、二苯甲酮、二苯甲酮衍生物、苯乙酮、苯乙酮衍生物、膦氧化物及衍生物、安息香烷基醚二苯基乙二酮縮酮、苯基乙醛酯及其衍生物、二聚苯基乙醛酯、過酸酯、鹵甲基三、六芳基雙咪唑/共起始劑系統、二茂鐵化合物、二茂鈦及其組合。
交聯可如下進行。經聚合物塗佈之PTFE薄片視情況用IPA預濕潤,接著用製備光引發劑之溶劑洗滌薄片以用彼溶劑交換IPA。接著將薄片在具有特定濃度之光引發劑之溶液中浸泡特定時間,接著曝露於UV照
射。在光引發劑溶液中的浸泡時間在1分鐘至24小時範圍內。UV照射時間在30秒至24小時範圍內。接著量測薄膜臨界濕潤表面張力(critical wetting surface tension;CWST)、效能鑑定及/或SPM測試。「SPM」意謂在120℃至180℃下熱硫酸過氧化氫混合物(按體積計H2SO4(96%):H2O2(30%)為80:20)。
根據本發明之一具體實例,親水性氟聚合物薄膜為多孔薄膜,例如奈米孔薄膜,例如孔隙直徑在1nm至100nm之間的薄膜,或孔隙直徑在1μm至10μm之間的微孔薄膜。
所得多孔薄膜之表面張力可如下測定。舉例而言,藉由用IPA溶劑預濕潤該薄膜薄片,且將該薄膜浸泡於濃度範圍在0.1質量%至10質量%之間的塗佈聚合物溶液中來在室溫下塗佈PTFE多孔支撐物之薄片。塗佈時間在介於(1分鐘至12小時)之間的範圍內。在浸泡支撐物之後,將其在對流烘箱中在100℃至160℃下乾燥。乾燥時間在介於(10分鐘至12小時)之間的範圍內。藉由量測臨界濕潤表面張力來量測所得多孔PTFE薄膜的濕潤特性。
表面改質在表面張力方面的改變藉由量測臨界濕潤表面張力(CWST)來量測。該方法依賴於一組具有特定組成之溶液。各溶液具有特定表面積張力。溶液的表面張力在25至92達因/公分範圍內,呈小幅非等量遞增形式。為了量測薄膜表面張力,將該薄膜置放在白光台之頂部上,將一滴具有特定表面張力之溶液塗覆至該薄膜表面,且記錄該液滴滲透該薄膜且如穿過該薄膜之光所指示變成亮白色所需要的時間。當液滴滲透該薄膜所需要的時間10秒時,視為即時濕潤。若時間>10秒,則溶液視為部分地濕潤該薄膜。
根據本發明之具體實例的親水性氟聚合物多孔薄膜可用於各種應用,包括例如診斷應用(包括例如樣品製備及/或診斷側向流動裝置)、噴墨應用、微影術(例如,作為基於HD/UHMW PE之介質的替代物)、供醫藥產業用之過濾流體、金屬移除、製備超純水、處理工業及地表水、用於醫療應用之過濾流體(包括供家庭及/或患者使用,例如靜脈內應用,亦包括例如過濾生物流體,諸如血液(例如,病毒移除))、供電子工業用之過濾流體(例如,在微電子產業及熱SPM中之過濾光阻流體)、供食品及飲料產業用之過濾流體、啤酒過濾、澄清、過濾含抗體及/或蛋白質之流體、過濾含核酸之流體、細胞偵測(包括於臨場)、細胞收集及/或過濾細胞培養物流體。或者,或此外,根據本發明之具體實例之薄膜可用於過濾空氣及/或氣體,及/或可用於排氣應用(例如,允許空氣及/或氣體但不允許液體經由此通過)。根據本發明之具體實例之薄膜可用於各種裝置中,包括外科裝置及產品,諸如,眼科外科產品。
根據本發明之具體實例,親水性氟聚合物薄膜可具有各種組態,包括平面形、平坦薄片、褶狀、管狀、螺旋形及中空纖維。
根據本發明之具體實例的親水性氟聚合物多孔薄膜通常安置於包含至少一個入口及至少一個出口且在該入口與該出口之間界定至少一個流體流動路徑的外殼中,其中至少一種本發明薄膜或包括至少一種本發明薄膜的過濾器橫越該流體流動路徑,從而提供過濾裝置或過濾模組。在一具體實例中,提供一種過濾裝置,其包含:外殼,其包含入口及第一出口,且在該入口與該第一出口之間界定第一液體流動路徑;及至少一種本發明薄膜或包含至少一種本發明薄膜的過濾器,本發明薄膜或包含至少
一種本發明薄膜的過濾器橫越該第一液體流動路徑安置於該外殼中。
對於交叉流動應用,至少一種本發明薄膜或包含至少一種本發明薄膜的過濾器較佳安置於外殼中,該外殼包含至少一個入口及至少兩個出口,且在該入口與該第一出口之間界定至少一個第一液體流動路徑,且在該入口與該第二出口之間界定第二液體流動路徑,其中本發明薄膜或包含至少一種本發明薄膜的過濾器橫越該第一液體流動路徑,從而提供過濾裝置或過濾模組。在一說明性具體實例中,過濾裝置包含交叉流動過濾模組,外殼包含入口、包含濃縮物出口的第一出口及包含滲透物出口的第二出口,且在該入口與該第一出口之間界定第一液體流動路徑,且在該入口與該第二出口之間界定第二液體流動路徑,其中至少一種本發明薄膜或包含至少一種本發明薄膜的過濾器橫越該第一液體流動路徑安置。
過濾裝置或模組可為可滅菌的。可採用具有適合之形狀且提供入口及一或多個出口之任何外殼。
外殼可自任何適合之硬質不透水材料製造,包括任何不透水的熱塑性材料,其與所處理之流體相容。舉例而言,外殼可由以下各者製造:金屬,諸如不鏽鋼;或聚合物,例如透明或半透明聚合物,諸如丙烯酸、聚丙烯、聚苯乙烯或聚碳酸酯樹脂。
根據一具體實例,親水性氟碳多孔薄膜包含任何適合之氟聚合物支撐物,例如PTFE、PVDF(聚偏二氟乙烯)、PVF(聚氟乙烯)、PCTFE(聚氯三氟乙烯)、FEP(氟化乙烯-丙烯)、ETFE(聚(乙烯/四氟乙烯))、ECTFE(聚(乙烯氯/三氟乙烯))、PFPE(全氟聚醚)、PFSA(全氟磺酸)及全氟聚氧代環丁烷,較佳為PTFE及PVDF。
本發明進一步提供藉由上文所述之方法製備的經親水性改質之氟聚合物多孔薄膜。
本發明進一步提供一種過濾流體之方法,該方法包含使該流體通過上文所述之多孔薄膜。
以下實施例進一步說明本發明,但當然不應以任何方式解釋為限制其範圍。
材料:購買且按原樣使用以下材料。
5-降莰烯-2,3-二甲酸二甲酯(C3)購自Alfa Aesar。
將二氯甲烷(dichloromethane;DCM)以活性氧化鋁儲存,且在使用之前,用氬氣淨化,異丙醇(IPA)、二環戊二烯(DCPD)、1H,1H,2H-全氟-1-辛烯(PF6)、1H,1H,2H-全氟-1-十二烯(PF10)、甲苯、亞硫醯氯、乙酸乙酯、二甲基甲醯胺(dimethylformamide;DMF)、順丁烯二醯亞胺、呋喃、偶氮二甲酸二異丙酯(DIAD)、三苯膦Ph3P)、1-十六醇、四氫呋喃(THF)、乙酸乙酯、N-苯基順丁烯二醯亞胺、乙腈、甲醇、格拉布氏第二代催化劑、3-溴吡啶及戊烷獲自Sigma-Aldrich公司,且在無進一步處理之情況下使用。亦獲自Sigma-Aldrich公司的二氯戊烷在使用之前用鹼性氧化鋁處理。環辛二烯(Cyclooctadiene;COD)自其硼烷於四氫呋喃中藉由真空蒸餾純化,且新鮮使用。
此實施例說明製備二氯[1,3-雙(2,4,6-三甲基苯基)-2-亞咪唑啶基](亞苄基)雙(3-溴吡啶)釕(II)(G3)催化劑。
將以上所說明之第二代格拉布氏催化劑(G2)(1.0g,1.18mmol)與3-溴吡啶(1.14mL,11.8mmol)在50mL燒瓶中混合。在室溫下攪拌5min後,紅色混合物變為亮綠色。在攪拌下持續15分鐘添加戊烷(40mL),且獲得綠色固體。將混合物在冷凍器中冷卻24h,且在真空下過濾。將所得G3催化劑、綠色固體用冷戊烷洗滌,且在真空下在室溫下乾燥,得到0.9g之產量,88%產率。
此實施例說明對根據本發明之一具體實例的均聚物及共聚物進行凝膠滲透層析鑑定。
所獲得之均聚物及嵌段共聚物利用MALS-GPC技術在以下條件下對其分子量及分子量分佈性質進行鑑定:
移動相:二氯甲烷(DCM)。
移動相溫度:30℃。
UV波長:245nm。
所使用之管柱:三個PSS SVD Lux分析管柱(苯乙烯-二乙烯苯共聚物網狀結構)、具有直徑5μm且孔徑為1000A、100,000A及1,000,000A之珠粒作為固定相之管柱以及保護管柱。
流動速率:1mL/min。
GPC系統:具有UV及RI偵測器的waters HPLC alliance e2695系統。
MALS系統:操作664.5nm雷射的具有8個偵測器的DAWN HELEOS 8系統。
此實施例說明製備根據本發明之一具體實例的NPF6單體之流程。
Parr高壓反應器圓柱容器裝入DCPD(100ml,737mmol)、PF6(168ml,737mmol),且將該圓柱連接至該反應器,且裝入對苯二酚(2.43g,22.1mmol),加熱至170℃後持續72小時。將反應內含物溶解至150ml DCM中,且轉移至500ml圓底燒瓶中,藉由真空蒸餾純化該單體。
1H-NMR(CDCl3):δ(ppm)6.2-6.0(2H),3.2(1H),3.0(1H),2.8(1H),2.0(1H),1.5(1H),及1.2-1.4(2H)。19F-NMR(CDCl3):δ-89.9(s),-112.6(m),-123.8至-121.3(m),-127.1至-125.3(m)。
此實施例展現合成根據本發明之一具體實例的iM6及iM6Ac。
向500ml RBF中,將降莰烯-5.6-二羧酸酐(25g,1.5mol)溶解於MeOH/THF(300ml)中,將胺基乙醇(9ml,1.5mol)緩慢逐滴添加至溶液中。將收集水的斯塔克迪恩分水器(stark-dean trap)連接至冷凝器,該冷凝器連接至該RBF。將溶液迴流持續24小時之後,自黃色溶液移除溶劑直至乾燥,且獲得單體。將固體溶解於乙酸乙酯中,用K2CO3溶液(200ml,2×)洗滌,用DI水(200ml,2×)洗滌,且經MgSO4乾燥。濃縮黃色溶液,得到單體,且藉由自MeOH中結晶來純化。
1H-NMR(CDCl3):δ(ppm)6.5(s,2H),5.25(s,2H),3.6至3.9(m,4H),2.29(s,2H),2.3至2.6(s,寬峰,H)。
混合iM6(25g,120mmol)、乙酸酐(14ml,240mmol,0.18ml)。將混合物迴流持續3h。完成後,反應混合物用碳酸氫鈉10%(15ml)稀釋,且用CH2Cl2(3×20mL)萃取。經合併之有機層經MgSO4乾燥,藉由蒸發移除溶劑,得到乙醯化化合物iM6-Ac。
此實施例展現根據本發明之一具體實例的聚(iM6-b-NPF6)之性質。
在裝備有氟聚合物樹脂-聚矽氧頂部開口膈膜的40mL瓶中稱量格拉布氏第二代(G2)催化劑(16mg,0.018mmol)及三苯膦(245mg,0.94mmol)。將催化劑溶解於經氬氣脫氣的二氯甲烷(DCM)(40mL)中,且經由雙頭針轉移至裝備有攪拌棒的乾淨1L RBF中。第一單體iM6-Ac(2.0g,6.42mmol)於DCM(100mL)中之溶液用氬氣脫氣,且轉移至催化劑溶液中,且攪拌30分鐘。30分鐘後獲得由該第一單體形成的1-2mL均聚物之等分試樣以用於分子量鑑定。第二單體NPF6(1.2g,2.81mmol)於DCM(200mL)中之溶液用氬氣脫氣,且轉移至正在RBF中聚合的均聚物溶液中,且再攪拌燒瓶之內含物180分鐘。接著將乙基乙烯基醚(2mL)添加至二嵌段共聚物之黃色溶液中以終止聚合。將所得聚合物在甲醇(2L,2×)中沈澱,回收呈白色固體狀之純聚合物。將聚合物過濾,且在真空下在室
溫下乾燥;產量(9.2g,98%)。聚(iM6Ac-b-NPF6)及聚(iM6Ac)之GPC層析圖描繪於圖1中。
利用兩種方法水解聚(iM6Ac-b-NPF6),生成聚(iM6-b-NPF6)。第一種方法為使用此前所述之標準塗佈製程將聚(iM6Ac-b-NPF6)塗佈在PTFE薄膜上,接著將該薄膜在IPA中之KOH醇溶液浸泡以脫除乙醯基之保護基,臨場生成聚(iM6-b-NPF6)。第二種方法涉及使用KOH水溶液之鹼性浴在溶液中脫除保護基,同時將聚合物溶解於THF中,得到聚(iM6-b-NPF6)之聚合物沈澱。
1H-NMR(300MHz,CDCl3):δ(ppm)6.5至6.0(s,寬峰),5.75至5.6(m,寬峰),5.65至5.2(m,寬峰),5.0至4.4(m,寬峰),4.5至4.0(m,寬峰),4.0至3.6(s,寬峰),3.5至2.9(m,寬峰),2.5至1.3(m,寬峰)。
如圖2中所說明,藉由將PTFE薄膜浸塗於1%(w/v)溶液中持續1h來測試共聚物吸附至氟聚合物基板的能力,且藉由量測薄膜表面的即時臨界濕潤表面張力(CWST)來測試經塗佈之薄膜之可濕性。在能夠溶解聚(iM6-b-NPF6)二嵌段共聚物的溶劑中,選擇DMAC及TFE/DCM(1:1)混合物用於塗佈實驗,因為兩者均濕潤「原來的」PTFE薄膜。
如圖3中所說明,為了進一步穩定共聚物層,使經塗佈之薄膜藉由浸泡在0.25%光引發劑(Irgacure 2959)之水溶液中5min繼而經UV照射60秒來受交聯製程。
在交聯步驟之後,將樣品用濃硫酸及過氧化氫之80/20混合物在140℃下刺激3h(「熱SPM」),接著12h DI滴流洗滌,且乾燥。
在各步驟之後,可濕性結果概述於表1中。
共聚物之施用增加PTFE薄膜之表面能,如由在33-40範圍內的CWST所指示,然而對於未經處理的、「原來的」PTFE薄膜,其CWST為25.4達因/公分。
此實施例展現根據本發明之一具體實例的聚(SZNB-NPF6)之合成及性質。合成各種聚(SZNB-NPF6)共聚物(聚(SZNB-r-NPF6)、聚(SZNB-b-NPF6)-1、聚(SZNB)均聚物及聚(SZNB-b-NPF6))。其通式結構已利用NMR光譜法確認。與所沈澱之共聚物之回收產量組合的元素分析之結果,特定地N比F比率,已應用於估計其最終組成。
NMDMA:
將5-降莰烯-2-甲醛(20mL;約149mmol)用二甲胺於THF中之2M溶液稀釋,同時在環境溫度下劇烈攪拌30min。經10分鐘逐份添加固體三乙醯氧基硼氫化鈉(40g;約180mmol),在添加時間期間,觀測到放熱反應。此時,混合物用無水1,2-二氯乙烷(50mL)稀釋,且持續攪拌16h。反應混合物藉由傾入至過量飽和碳酸氫鈉溶液中淬滅,接著用二氯甲烷(150mL)萃取。將底部有機層分離,且用飽和碳酸氫鹽溶液、鹽水萃取,且接著經無水硫酸鎂乾燥。在傾析之後,有機相用兩倍體積之戊
烷稀釋,且過濾出不可溶物質,接著藉由旋轉蒸發濃縮,同時不超過30托之真空及50℃之浴溫。所得棕色液體(對應於81%粗產率的18.2g)藉由NMR認為純到足以原樣進行烷化步驟。
SZNB:
在NMDMA下所述之12.5g三級胺用無水THF(80mL)稀釋,接著經15分鐘在環境溫度下逐滴添加1,3-丙烷磺內酯(12.5g;約1.2當量)溶解於無水THF(30mL)中之溶液,且同時維持劇烈攪拌。反應進展藉由形成增加量之沈澱物為可見的。在24小時之後,將固體過濾出,且用無水THF洗滌若干次,且最終用乙醚洗滌一次。在室內真空下在60℃下乾燥所得產物隔夜,且最終獲得12.8g產量(59%)的單體SZNB。所需結構藉由NMR(在氧化氘中)且藉由LCMS確認,其中觀測到所需分子峰值為274.4。用於ROMP聚合方案的足夠純度藉由元素分析確認(計算值C 57.11,H 8.48,N 5.12,S 11.93:實驗值C 56.07,H 9.37,N 4.85,S 11.15)。
一般聚合方案:
ROMP在氬氣之正壓下在儲存於鹼性氧化鋁上之溶劑中進
行,且用氬氣充分淨化。在燒瓶之間藉由雙頭針插入法轉移溶液。在環境溫度下進行所有操作。通常,將第3代格拉布氏起始劑(G3)稱量至用氬氣淨化的圓底燒瓶中,接著用適當溶劑溶解,且按順序(用於嵌段共聚物合成)或以混合物之形式(用於隨機共聚物)添加單體溶液。在適當時間之後,藉由添加過量乙基乙烯基醚(ethyl vinyl ether;EVE)來終止聚合,攪拌30min,且藉由逐滴添加約十倍體積之適當非溶劑進行最終沈澱。在移除上清液之後,用非溶劑洗滌固體若干次,接著溶解(通常在TFE中),以便轉移至塗焦油燒瓶中,在真空中旋轉蒸發至恆重。
聚(SZNB-r-NPF6):
向G3(14mg)於TFE(10mL)中之溶液中添加一起溶解於TFE(40mL)中的SZNB(1.7g)及NPF6(0.64g)之混合物,維持16小時攪拌,接著EVE淬滅,且沈澱於甲醇中。回收2.05g(85%之總單體饋料)。元素分析-實驗值C 44.38,H 6.19,F 25.41,N 2.46,S 5.90。
聚(SZNB-b-NPF6)-1:
向G3(26mg)於TFE(10mL)中之溶液中添加SZNB(3.16g)於TFE(60mL)中之溶液,接著攪拌2h。接著,添加NPF6(1.19g)於TFE(10mL)中之溶液。不久之後得到渾濁的反應混合物,且開始形成沈澱物。在又30min之後,EVE淬滅,濾出沈澱物,用甲醇洗滌,接著分析鑑定其主要為NPF6之均聚物。分離形成於與甲醇洗液合併的濾液中之沈澱物。回收物為3.15g(72%之總單體饋料)。元素分析-實驗值C 45.84,H 7.25,F 14.37,N 3.45,S 8.27。
聚(SZNB)均聚物:
向G3(9mg)於DCM(15mL)中之溶液中添加SZNB(1.05g)於TFE(20mL)中之溶液,接著攪拌1h。接著,添加NPF6(0.4g)溶解於DCM(5mL)中之溶液,且維持30min攪拌,接著EVE淬滅,且於甲醇中沈澱。回收物為0.84g(58%之總單體饋料)。元素分析-實驗值C 50.17,H 9.62,F 1.11,N 4.24,S 10.28。
聚(SZNB-b-NPF6)-2:
向G3(26mg)於1:1 TFE/DCM混合物(20mL)中之溶液中添加SZNB(3.21g)於1:1 TFE/DCM混合物(80mL)中之溶液,接著攪拌2h。接著,添加NPF6(1.21g)溶解於1:1 TFE/DCM混合物(20mL)中之溶液,且維持30min攪拌,接著EVE淬滅,且於乙醚中沈澱。用溫熱的甲醇(100mL)萃取沈澱物16小時,接著乾燥至恆重。回收物為1.83g(41%之總單體饋料)。元素分析-實驗值C 48.02,H 6.98,F 17.11,N 3.31,S 7.41。
藉由將PTFE薄膜浸塗於1%(w/v)溶液中1h來測試共聚物吸附至氟聚合物基板的能力,且藉由量測薄膜表面的即時(CWST)來測試經塗佈之薄膜之可濕性。選擇2,2,2-三氟乙醇(TFE)作為溶劑,歸因於其既溶解SZNB衍生之共聚物又濕潤「原來的」PTFE薄膜的能力。
為了進一步穩定共聚物層,使經塗佈之薄膜藉由浸泡於光引發劑之溶液中5min繼而經UV照射60秒來受交聯製程。下表中列出所施加之特定條件。
在交聯步驟之後,接著將樣品用濃硫酸及過氧化氫之80:20混合物在140℃下刺激3小時(所謂的「熱SPM」),接著12h DI滴流洗滌,且乾燥。
在各步驟之後,可濕性結果概述於以下表2中。
共聚物明顯地增加PTFE薄膜之表面能,如由在33-48範圍內的CWST所指示,然而對於未經處理的、「原來的」PTFE薄膜,其CWST為25.4達因/公分。
本文中所引用之所有參考文獻(包括公開案、專利申請案及專利)均以引用的方式併入本文中,該引用程度就如同各參考文獻分別地且特定地指示為以引用的方式併入且全文闡述於本文中一般。
除非本文中另外指示或明顯與上下文矛盾,否則在描述本發
明之上下文中(尤其在隨附申請專利範圍的上下文中),使用術語「一種(a/an)」及「該(the)」及「至少一種(at least one)」及類似指示物應理解為涵蓋單數及複數兩者。除非本文中另外指示或與上下文明顯矛盾,否則使用後接一或多個項目之清單(例如「A及B中之至少一者」)之術語「至少一」應理解為,意謂選自所列舉項目之一個項目(A或B)或所列舉項目中之兩者或兩者以上的任何組合(A以及B)。除非另外說明,否則術語「包含」、「具有」、「包括」及「含有」均解釋為開放式術語(亦即,意謂「包括(但不限於)」)。除非本文中另外指示,否則本文中值範圍之列舉僅意欲充當單獨提及屬於該範圍內之各獨立值的簡寫方法,且各獨立值併入本說明書中,如同在本文中單獨地敍述一般。除非本文中另外指示或上下文明顯矛盾,否則本文中所描述的所有方法均可以任何適合次序進行。除非另外主張,否則使用本文所提供之任何及所有實例或例示性語言(例如,「諸如」)僅意欲更好地闡明本發明而不對本發明之範圍造成限制。本說明書中之語言不應解釋為指示任何未主張之要素對於實踐本發明而言必不可少。
本文描述本發明之較佳具體實例,包括本發明人已知的用於進行本發明之最佳模式。在閱讀前文描述之後,彼等較佳具體實例之變化對於一般熟習此項技術者可變得顯而易見。本發明人期望熟習此項技術者適當時採用該等變化,且本發明人意欲以不同於本文中特定所述之方式實踐本發明。因此,本發明包括如由適用法律所准許之在此隨附申請專利範圍中所敍述之標的物的所有修改及等效物。此外,除非本文另外指示或以其他方式與上下文明顯矛盾,否則本發明涵蓋上述要素在其所有可能變化中之任何組合。
Claims (12)
- 一種複合親水性多孔薄膜,其包含多孔氟聚合物支撐物及包含共聚物的塗層,其中該共聚物包含重複單元A及B,其中A具有下式:
- 如申請專利範圍第1項之複合親水性多孔薄膜,其中該共聚物具有選自芳基及烷氧基的鏈端基。
- 如申請專利範圍第1項或第2項之複合親水性多孔薄膜,其中該共聚物為下式中之一者:
- 如申請專利範圍第3項之複合親水性多孔薄膜,其中該共聚物為下式中之一者:
- 如申請專利範圍第3項之複合親水性多孔薄膜,其中該共聚物為下式中之一者:
- 一種親水性改質多孔氟聚合物支撐物之方法,其包含:(i)提供多孔氟聚合物支撐物;(ii)用包含溶劑及共聚物的溶液塗佈該多孔氟聚合物支撐物,其中該共聚物包含重複單元A及B,其中A具有下式:
- 如申請專利範圍第6項之方法,其中該共聚物具有選自芳基及烷氧基的鏈端基。
- 如申請專利範圍第6項或第7項之方法,其中該共聚物為下式中之一者:
- 一種經親水性改質之多孔氟聚合物薄膜,其利用如申請專利範圍第6項至第8項中任一項之方法製備。
- 如申請專利範圍第1項至第5項中任一項之複合親水性多孔薄膜或如申請專利範圍第10項之經親水性改質之多孔氟聚合物薄膜,其中該多孔氟聚合物支撐物係選自PTFE、PVDF、PVF(聚氟乙烯)、PCTFE(聚氯三氟乙烯)、FEP(氟化乙烯-丙烯)、ETFE(聚(乙烯/四氟乙烯))、ECTFE(聚(乙烯/氯三氟乙烯))、PFPE(全氟聚醚)、PFSA(全氟磺酸)及全氟聚氧代環丁烷。
- 一種過濾流體之方法,該方法包含使該流體通過如申請專利範圍第1項至第5項、第9項或第10項中任一項之多孔薄膜。
- 如申請專利範圍第1項至第5項、第9項或第10項中任一項之親水性多孔薄膜,其以平面形、平坦薄片、褶狀、管狀、螺旋形及中空纖維組態形式組態。
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