TWI568898B - Silicon single crystal manufacturing method - Google Patents

Silicon single crystal manufacturing method Download PDF

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Publication number
TWI568898B
TWI568898B TW104133645A TW104133645A TWI568898B TW I568898 B TWI568898 B TW I568898B TW 104133645 A TW104133645 A TW 104133645A TW 104133645 A TW104133645 A TW 104133645A TW I568898 B TWI568898 B TW I568898B
Authority
TW
Taiwan
Prior art keywords
crucible
wafer
single crystal
quartz crucible
diameter
Prior art date
Application number
TW104133645A
Other languages
English (en)
Chinese (zh)
Other versions
TW201636465A (zh
Inventor
Shinichi Tomita
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of TW201636465A publication Critical patent/TW201636465A/zh
Application granted granted Critical
Publication of TWI568898B publication Critical patent/TWI568898B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
TW104133645A 2015-01-14 2015-10-14 Silicon single crystal manufacturing method TWI568898B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015005202A JP6451333B2 (ja) 2015-01-14 2015-01-14 シリコン単結晶の製造方法

Publications (2)

Publication Number Publication Date
TW201636465A TW201636465A (zh) 2016-10-16
TWI568898B true TWI568898B (zh) 2017-02-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW104133645A TWI568898B (zh) 2015-01-14 2015-10-14 Silicon single crystal manufacturing method

Country Status (4)

Country Link
JP (1) JP6451333B2 (ja)
KR (1) KR101727071B1 (ja)
CN (1) CN105780105B (ja)
TW (1) TWI568898B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6604338B2 (ja) * 2017-01-05 2019-11-13 株式会社Ｓｕｍｃｏ シリコン単結晶の引き上げ条件演算プログラム、シリコン単結晶のホットゾーンの改良方法、およびシリコン単結晶の育成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110272A (en) * 1997-09-29 2000-08-29 Sumitomo Sitix Corporation Method for producing silicon single crystal
TW201331430A (zh) * 2011-09-21 2013-08-01 Rec Wafer Pte Ltd 將矽裝載於坩堝中的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02172888A (ja) * 1988-12-26 1990-07-04 Nkk Corp シリコン単結晶引き上げ用るつぼ
JPH1081580A (ja) * 1996-09-05 1998-03-31 Super Silicon Kenkyusho:Kk ルツボ内への塊状原料の装填方法
US6605149B2 (en) * 2002-01-11 2003-08-12 Hemlock Semiconductor Corporation Method of stacking polycrystalline silicon in process for single crystal production
JP4789437B2 (ja) * 2004-07-16 2011-10-12 信越石英株式会社 シリコン単結晶引上げ用石英ガラスるつぼおよびその製造方法
JP4699872B2 (ja) 2005-11-09 2011-06-15 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶の製造方法
JP2008195566A (ja) * 2007-02-13 2008-08-28 Sumco Corp シリコン単結晶の引き上げ方法および引き上げ装置
EP2138610A1 (en) * 2007-03-19 2009-12-30 Mnk-sog Silicon, Inc. Method and apparatus for manufacturing silicon ingot
JP2009249233A (ja) * 2008-04-07 2009-10-29 Sumco Corp シリコン単結晶の育成方法
JP2009249231A (ja) * 2008-04-07 2009-10-29 Sumco Corp 単結晶シリコン製造用結晶原料及び単結晶シリコンインゴットの製造方法
JP2009286646A (ja) * 2008-05-28 2009-12-10 Sumco Corp シリコン単結晶の製造方法
JP5136278B2 (ja) * 2008-08-18 2013-02-06 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
JP5072933B2 (ja) * 2008-10-31 2012-11-14 ジャパンスーパークォーツ株式会社 シリコン単結晶引き上げ用石英ガラスルツボ及びその製造方法並びにシリコン単結晶の製造方法
KR101540571B1 (ko) 2013-12-13 2015-07-31 주식회사 엘지실트론 단결정 실리콘 잉곳 제조용 첨가물 및 이 첨가물을 이용한 단결정 실리콘 잉곳 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110272A (en) * 1997-09-29 2000-08-29 Sumitomo Sitix Corporation Method for producing silicon single crystal
TW201331430A (zh) * 2011-09-21 2013-08-01 Rec Wafer Pte Ltd 將矽裝載於坩堝中的方法

Also Published As

Publication number Publication date
JP2016130200A (ja) 2016-07-21
JP6451333B2 (ja) 2019-01-16
KR101727071B1 (ko) 2017-04-14
CN105780105A (zh) 2016-07-20
CN105780105B (zh) 2018-09-25
KR20160087741A (ko) 2016-07-22
TW201636465A (zh) 2016-10-16

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