TWI563352B - Resist developer, method for forming resist pattern and method for manufacturing mold - Google Patents

Resist developer, method for forming resist pattern and method for manufacturing mold

Info

Publication number
TWI563352B
TWI563352B TW101128095A TW101128095A TWI563352B TW I563352 B TWI563352 B TW I563352B TW 101128095 A TW101128095 A TW 101128095A TW 101128095 A TW101128095 A TW 101128095A TW I563352 B TWI563352 B TW I563352B
Authority
TW
Taiwan
Prior art keywords
manufacturing mold
resist
developer
resist pattern
forming
Prior art date
Application number
TW101128095A
Other languages
English (en)
Chinese (zh)
Other versions
TW201324064A (zh
Inventor
Hiromasa Iyama
Hideo Kobayashi
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW201324064A publication Critical patent/TW201324064A/zh
Application granted granted Critical
Publication of TWI563352B publication Critical patent/TWI563352B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW101128095A 2011-08-04 2012-08-03 Resist developer, method for forming resist pattern and method for manufacturing mold TWI563352B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011170898 2011-08-04

Publications (2)

Publication Number Publication Date
TW201324064A TW201324064A (zh) 2013-06-16
TWI563352B true TWI563352B (en) 2016-12-21

Family

ID=47629096

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101128095A TWI563352B (en) 2011-08-04 2012-08-03 Resist developer, method for forming resist pattern and method for manufacturing mold

Country Status (3)

Country Link
JP (1) JP6124459B2 (ja)
TW (1) TWI563352B (ja)
WO (1) WO2013018569A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5837812B2 (ja) * 2010-12-27 2015-12-24 Hoya株式会社 レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法
JP5837811B2 (ja) * 2010-12-27 2015-12-24 Hoya株式会社 レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法
JP5798466B2 (ja) * 2010-12-27 2015-10-21 Hoya株式会社 レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法
WO2015070168A1 (en) 2013-11-11 2015-05-14 Tokyo Electron Limited Method and hardware for enhanced removal of post etch polymer and hardmask removal
JP6607940B2 (ja) * 2015-06-30 2019-11-20 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
CN108369378B (zh) * 2016-01-29 2021-07-20 日本瑞翁株式会社 形成抗蚀剂图案的方法
JP6699203B2 (ja) * 2016-01-29 2020-05-27 日本ゼオン株式会社 レジストパターン形成方法
EP3564276B1 (en) * 2016-12-27 2023-04-19 Zeon Corporation Polymer, positive resist composition, and method of forming resist pattern
TWI626516B (zh) * 2017-07-03 2018-06-11 Crowningtek Inc Manufacturing method of micron-sized imprinting mold and imprinting mold
JP2019140209A (ja) 2018-02-08 2019-08-22 東芝メモリ株式会社 インプリントシステム、半導体装置の製造方法、及びプログラム
WO2024014152A1 (ja) * 2022-07-11 2024-01-18 東洋合成工業株式会社 パターン基材の製造方法、硬化性組成物、及び部品の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02221962A (ja) * 1989-02-23 1990-09-04 Asahi Glass Co Ltd レジスト現像剤
JP2006227174A (ja) * 2005-02-16 2006-08-31 Ricoh Co Ltd レジスト現像液及びパターン形成方法
JP2009226762A (ja) * 2008-03-24 2009-10-08 Toppan Printing Co Ltd インプリントモールド、インプリントモールド製造方法、微細構造体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55100548A (en) * 1979-01-26 1980-07-31 Japan Synthetic Rubber Co Ltd Developer
JPS61245155A (ja) * 1985-04-23 1986-10-31 Toray Ind Inc 感放射線レジスト用現像液
JPH02275462A (ja) * 1989-04-17 1990-11-09 Toppan Printing Co Ltd 電子ビームレジストのパターン形成方法
JPH10228117A (ja) * 1997-02-14 1998-08-25 Nippon Telegr & Teleph Corp <Ntt> レジストの現像方法およびそれに用いるリンス液
JP2000039717A (ja) * 1998-07-24 2000-02-08 Fujitsu Ltd レジストパターンの形成方法および半導体装置の製造方法
KR101424660B1 (ko) * 2009-05-21 2014-08-01 가부시끼가이샤 도꾸야마 레지스트 패턴의 형성 방법
JP5602475B2 (ja) * 2010-03-31 2014-10-08 Ｈｏｙａ株式会社 レジストパターンの形成方法及びモールドの製造方法
EP2693270B1 (en) * 2011-03-28 2015-12-09 FUJIFILM Corporation Method for producing lithographic printing plate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02221962A (ja) * 1989-02-23 1990-09-04 Asahi Glass Co Ltd レジスト現像剤
JP2006227174A (ja) * 2005-02-16 2006-08-31 Ricoh Co Ltd レジスト現像液及びパターン形成方法
JP2009226762A (ja) * 2008-03-24 2009-10-08 Toppan Printing Co Ltd インプリントモールド、インプリントモールド製造方法、微細構造体

Also Published As

Publication number Publication date
JP6124459B2 (ja) 2017-05-10
JPWO2013018569A1 (ja) 2015-03-05
TW201324064A (zh) 2013-06-16
WO2013018569A1 (ja) 2013-02-07

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