TWI563336B - - Google Patents
Info
- Publication number
- TWI563336B TWI563336B TW103146548A TW103146548A TWI563336B TW I563336 B TWI563336 B TW I563336B TW 103146548 A TW103146548 A TW 103146548A TW 103146548 A TW103146548 A TW 103146548A TW I563336 B TWI563336 B TW I563336B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014006241A JP6339807B2 (ja) | 2014-01-16 | 2014-01-16 | 露光用マスクの製造方法、露光用マスクの製造システム、及び半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201531793A TW201531793A (zh) | 2015-08-16 |
| TWI563336B true TWI563336B (https=) | 2016-12-21 |
Family
ID=53521288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103146548A TW201531793A (zh) | 2014-01-16 | 2014-12-31 | 曝光用遮罩的製造方法、曝光用遮罩的製造系統、及半導體裝置的製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9406573B2 (https=) |
| JP (1) | JP6339807B2 (https=) |
| KR (1) | KR101720991B1 (https=) |
| TW (1) | TW201531793A (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5841710B2 (ja) * | 2010-03-17 | 2016-01-13 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP5764364B2 (ja) | 2011-03-31 | 2015-08-19 | 株式会社ニューフレアテクノロジー | 半導体装置の製造方法、描画装置、プログラム及びパターン転写装置 |
| DE102014217907B4 (de) * | 2014-09-08 | 2018-12-20 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen einer Maske für den extrem ultra-violetten Wellenlängenbereich und Maske |
| DE102014223811B4 (de) * | 2014-11-21 | 2016-09-29 | Carl Zeiss Smt Gmbh | Abbildende Optik für die EUV-Projektionslithographie, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines strukturierten Bauteils |
| CN105719981B (zh) * | 2014-12-04 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| TWI805795B (zh) * | 2018-07-20 | 2023-06-21 | 美商應用材料股份有限公司 | 基板定位設備與方法 |
| JP7492456B2 (ja) * | 2018-11-07 | 2024-05-29 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法 |
| US11119404B2 (en) * | 2019-10-10 | 2021-09-14 | Kla Corporation | System and method for reducing printable defects on extreme ultraviolet pattern masks |
| CN113296356B (zh) * | 2020-02-24 | 2024-06-18 | 中芯国际集成电路制造(上海)有限公司 | 修正掩膜图案的方法 |
| US11874597B2 (en) * | 2020-02-25 | 2024-01-16 | Synopsys, Inc. | Stochastic optical proximity corrections |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050226492A1 (en) * | 2004-04-09 | 2005-10-13 | Allied Integrated Patterning Corporation | Acceptable defect positioning and manufacturing method for large-scaled photomask blanks |
| TW200620409A (en) * | 2004-09-29 | 2006-06-16 | Hoya Corp | Mask blank substrate, mask blank, exposure mask, mask blank substrate manufacturing method, and semiconductor manufacturing method |
| TW200844650A (en) * | 2006-12-27 | 2008-11-16 | Asahi Glass Co Ltd | Reflective mask blank for EUV lithography |
| US7927766B2 (en) * | 2008-03-03 | 2011-04-19 | International Business Machines Corporation | Pre-alignment marking and inspection to improve mask substrate defect tolerance |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3412898B2 (ja) * | 1994-03-02 | 2003-06-03 | キヤノン株式会社 | 反射型マスクの作製方法と作製装置、これによる反射型マスクを用いた露光装置とデバイス製造方法 |
| JP2001033941A (ja) | 1999-07-16 | 2001-02-09 | Toshiba Corp | パターン形成方法及び露光装置 |
| JP2004170948A (ja) * | 2002-10-30 | 2004-06-17 | Nikon Corp | パターン転写用マスク、マスク作製方法及び露光方法 |
| JP2004193269A (ja) * | 2002-12-10 | 2004-07-08 | Hitachi Ltd | マスクの製造方法および半導体集積回路装置の製造方法 |
| JP2005134747A (ja) * | 2003-10-31 | 2005-05-26 | Toshiba Corp | マスク評価方法、マスク評価システム、マスク製造方法およびプログラム |
| US7171637B2 (en) * | 2005-01-14 | 2007-01-30 | Intel Corporation | Translation generation for a mask pattern |
| JP4536804B2 (ja) * | 2008-06-27 | 2010-09-01 | Ｈｏｙａ株式会社 | フォトマスクの製造方法 |
| CN101833235B (zh) * | 2009-03-13 | 2012-11-14 | 中芯国际集成电路制造(上海)有限公司 | 掩模版原片的质量检测系统和方法 |
| JP2010219445A (ja) | 2009-03-18 | 2010-09-30 | Nuflare Technology Inc | 荷電粒子ビーム描画方法、荷電粒子ビーム描画用の基準マークの位置検出方法及び荷電粒子ビーム描画装置 |
| JP5537443B2 (ja) * | 2011-01-04 | 2014-07-02 | 株式会社東芝 | Ｅｕｖマスク用ブランクの良否判定方法及びｅｕｖマスクの製造方法 |
| US8718353B2 (en) * | 2012-03-08 | 2014-05-06 | Kla-Tencor Corporation | Reticle defect inspection with systematic defect filter |
| JP6460619B2 (ja) * | 2012-03-12 | 2019-01-30 | Hoya株式会社 | 反射型マスクブランク及び反射型マスクの製造方法 |
-
2014
- 2014-01-16 JP JP2014006241A patent/JP6339807B2/ja not_active Expired - Fee Related
- 2014-12-31 TW TW103146548A patent/TW201531793A/zh unknown
-
2015
- 2015-01-07 US US14/591,106 patent/US9406573B2/en active Active
- 2015-01-14 KR KR1020150006537A patent/KR101720991B1/ko not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050226492A1 (en) * | 2004-04-09 | 2005-10-13 | Allied Integrated Patterning Corporation | Acceptable defect positioning and manufacturing method for large-scaled photomask blanks |
| TW200620409A (en) * | 2004-09-29 | 2006-06-16 | Hoya Corp | Mask blank substrate, mask blank, exposure mask, mask blank substrate manufacturing method, and semiconductor manufacturing method |
| TW200844650A (en) * | 2006-12-27 | 2008-11-16 | Asahi Glass Co Ltd | Reflective mask blank for EUV lithography |
| US7927766B2 (en) * | 2008-03-03 | 2011-04-19 | International Business Machines Corporation | Pre-alignment marking and inspection to improve mask substrate defect tolerance |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015135874A (ja) | 2015-07-27 |
| JP6339807B2 (ja) | 2018-06-06 |
| US20150198896A1 (en) | 2015-07-16 |
| US9406573B2 (en) | 2016-08-02 |
| KR101720991B1 (ko) | 2017-03-29 |
| TW201531793A (zh) | 2015-08-16 |
| KR20150085790A (ko) | 2015-07-24 |