JP6339807B2 - 露光用マスクの製造方法、露光用マスクの製造システム、及び半導体装置の製造方法 - Google Patents

露光用マスクの製造方法、露光用マスクの製造システム、及び半導体装置の製造方法 Download PDF

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Publication number
JP6339807B2
JP6339807B2 JP2014006241A JP2014006241A JP6339807B2 JP 6339807 B2 JP6339807 B2 JP 6339807B2 JP 2014006241 A JP2014006241 A JP 2014006241A JP 2014006241 A JP2014006241 A JP 2014006241A JP 6339807 B2 JP6339807 B2 JP 6339807B2
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Japan
Prior art keywords
pattern
exposure mask
euv exposure
defects
mask blank
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Expired - Fee Related
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JP2014006241A
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English (en)
Japanese (ja)
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JP2015135874A (ja
JP2015135874A5 (https=
Inventor
阿部　隆幸
隆幸 阿部
山口　哲男
哲男 山口
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Nuflare Technology Inc
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Nuflare Technology Inc
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Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Priority to JP2014006241A priority Critical patent/JP6339807B2/ja
Priority to TW103146548A priority patent/TW201531793A/zh
Priority to US14/591,106 priority patent/US9406573B2/en
Priority to KR1020150006537A priority patent/KR101720991B1/ko
Publication of JP2015135874A publication Critical patent/JP2015135874A/ja
Publication of JP2015135874A5 publication Critical patent/JP2015135874A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2014006241A 2014-01-16 2014-01-16 露光用マスクの製造方法、露光用マスクの製造システム、及び半導体装置の製造方法 Expired - Fee Related JP6339807B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014006241A JP6339807B2 (ja) 2014-01-16 2014-01-16 露光用マスクの製造方法、露光用マスクの製造システム、及び半導体装置の製造方法
TW103146548A TW201531793A (zh) 2014-01-16 2014-12-31 曝光用遮罩的製造方法、曝光用遮罩的製造系統、及半導體裝置的製造方法
US14/591,106 US9406573B2 (en) 2014-01-16 2015-01-07 Exposure mask fabrication method, exposure mask fabrication system, and semiconductor device fabrication method
KR1020150006537A KR101720991B1 (ko) 2014-01-16 2015-01-14 노광용 마스크의 제조 방법, 노광용 마스크의 제조 시스템 및 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014006241A JP6339807B2 (ja) 2014-01-16 2014-01-16 露光用マスクの製造方法、露光用マスクの製造システム、及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2015135874A JP2015135874A (ja) 2015-07-27
JP2015135874A5 JP2015135874A5 (https=) 2017-03-23
JP6339807B2 true JP6339807B2 (ja) 2018-06-06

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JP2014006241A Expired - Fee Related JP6339807B2 (ja) 2014-01-16 2014-01-16 露光用マスクの製造方法、露光用マスクの製造システム、及び半導体装置の製造方法

Country Status (4)

Country Link
US (1) US9406573B2 (https=)
JP (1) JP6339807B2 (https=)
KR (1) KR101720991B1 (https=)
TW (1) TW201531793A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5841710B2 (ja) * 2010-03-17 2016-01-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5764364B2 (ja) 2011-03-31 2015-08-19 株式会社ニューフレアテクノロジー 半導体装置の製造方法、描画装置、プログラム及びパターン転写装置
DE102014217907B4 (de) * 2014-09-08 2018-12-20 Carl Zeiss Smt Gmbh Verfahren zum Herstellen einer Maske für den extrem ultra-violetten Wellenlängenbereich und Maske
DE102014223811B4 (de) * 2014-11-21 2016-09-29 Carl Zeiss Smt Gmbh Abbildende Optik für die EUV-Projektionslithographie, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines strukturierten Bauteils
CN105719981B (zh) * 2014-12-04 2018-09-07 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
TWI805795B (zh) * 2018-07-20 2023-06-21 美商應用材料股份有限公司 基板定位設備與方法
JP7492456B2 (ja) * 2018-11-07 2024-05-29 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
US11119404B2 (en) * 2019-10-10 2021-09-14 Kla Corporation System and method for reducing printable defects on extreme ultraviolet pattern masks
CN113296356B (zh) * 2020-02-24 2024-06-18 中芯国际集成电路制造(上海)有限公司 修正掩膜图案的方法
US11874597B2 (en) * 2020-02-25 2024-01-16 Synopsys, Inc. Stochastic optical proximity corrections

Family Cites Families (16)

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JP3412898B2 (ja) * 1994-03-02 2003-06-03 キヤノン株式会社 反射型マスクの作製方法と作製装置、これによる反射型マスクを用いた露光装置とデバイス製造方法
JP2001033941A (ja) 1999-07-16 2001-02-09 Toshiba Corp パターン形成方法及び露光装置
JP2004170948A (ja) * 2002-10-30 2004-06-17 Nikon Corp パターン転写用マスク、マスク作製方法及び露光方法
JP2004193269A (ja) * 2002-12-10 2004-07-08 Hitachi Ltd マスクの製造方法および半導体集積回路装置の製造方法
JP2005134747A (ja) * 2003-10-31 2005-05-26 Toshiba Corp マスク評価方法、マスク評価システム、マスク製造方法およびプログラム
TWI261726B (en) * 2004-04-09 2006-09-11 Allied Integrated Patterning C Acceptable defect positioning and manufacturing method for large-scaled photomask blanks
KR100710960B1 (ko) * 2004-09-29 2007-04-24 호야 가부시키가이샤 마스크 블랭크용 기판, 마스크 블랭크, 노광용 마스크,마스크 블랭크용 기판의 제조방법 및 반도체 제조방법
US7171637B2 (en) * 2005-01-14 2007-01-30 Intel Corporation Translation generation for a mask pattern
WO2008084680A1 (ja) * 2006-12-27 2008-07-17 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク
US7927766B2 (en) * 2008-03-03 2011-04-19 International Business Machines Corporation Pre-alignment marking and inspection to improve mask substrate defect tolerance
JP4536804B2 (ja) * 2008-06-27 2010-09-01 Ｈｏｙａ株式会社 フォトマスクの製造方法
CN101833235B (zh) * 2009-03-13 2012-11-14 中芯国际集成电路制造(上海)有限公司 掩模版原片的质量检测系统和方法
JP2010219445A (ja) 2009-03-18 2010-09-30 Nuflare Technology Inc 荷電粒子ビーム描画方法、荷電粒子ビーム描画用の基準マークの位置検出方法及び荷電粒子ビーム描画装置
JP5537443B2 (ja) * 2011-01-04 2014-07-02 株式会社東芝 Ｅｕｖマスク用ブランクの良否判定方法及びｅｕｖマスクの製造方法
US8718353B2 (en) * 2012-03-08 2014-05-06 Kla-Tencor Corporation Reticle defect inspection with systematic defect filter
JP6460619B2 (ja) * 2012-03-12 2019-01-30 Hoya株式会社 反射型マスクブランク及び反射型マスクの製造方法

Also Published As

Publication number Publication date
JP2015135874A (ja) 2015-07-27
US20150198896A1 (en) 2015-07-16
US9406573B2 (en) 2016-08-02
TWI563336B (https=) 2016-12-21
KR101720991B1 (ko) 2017-03-29
TW201531793A (zh) 2015-08-16
KR20150085790A (ko) 2015-07-24

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