TWI562220B - Manufacturing method of semiconductor structure - Google Patents
Manufacturing method of semiconductor structureInfo
- Publication number
- TWI562220B TWI562220B TW103117920A TW103117920A TWI562220B TW I562220 B TWI562220 B TW I562220B TW 103117920 A TW103117920 A TW 103117920A TW 103117920 A TW103117920 A TW 103117920A TW I562220 B TWI562220 B TW I562220B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- semiconductor structure
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103117920A TWI562220B (en) | 2014-05-22 | 2014-05-22 | Manufacturing method of semiconductor structure |
CN201710116295.2A CN107039481B (zh) | 2014-05-22 | 2015-04-23 | 半导体结构的制造方法 |
CN201510195387.5A CN105097990B (zh) | 2014-05-22 | 2015-04-23 | 半导体结构的制造方法 |
US14/703,796 US9419050B2 (en) | 2014-05-22 | 2015-05-04 | Manufacturing method of semiconductor structure with protein tape |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103117920A TWI562220B (en) | 2014-05-22 | 2014-05-22 | Manufacturing method of semiconductor structure |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201545220A TW201545220A (zh) | 2015-12-01 |
TWI562220B true TWI562220B (en) | 2016-12-11 |
Family
ID=54556633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103117920A TWI562220B (en) | 2014-05-22 | 2014-05-22 | Manufacturing method of semiconductor structure |
Country Status (3)
Country | Link |
---|---|
US (1) | US9419050B2 (zh) |
CN (2) | CN105097990B (zh) |
TW (1) | TWI562220B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017131683A1 (en) * | 2016-01-28 | 2017-08-03 | Intel IP Corporation | Integrated circuit packages |
CN107579045A (zh) * | 2017-08-14 | 2018-01-12 | 晶能光电(江西)有限公司 | 晶圆切割方法 |
DE102018128616A1 (de) * | 2018-06-24 | 2019-12-24 | Besi Switzerland Ag | Vorrichtung und Verfahren zum Ablösen eines Chips von einer Klebefolie |
CN111952166A (zh) * | 2019-05-17 | 2020-11-17 | 玮锋科技股份有限公司 | 晶圆接合膜及制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200616177A (en) * | 2004-11-03 | 2006-05-16 | Advanced Semiconductor Eng | Chip package having flat transmission surface of transparent molding compound and method for manufacturing the same |
US20070054419A1 (en) * | 2005-09-02 | 2007-03-08 | Kyung-Wook Paik | Wafer level chip size package for CMOS image sensor module and manufacturing method thereof |
TW200824064A (en) * | 2006-11-24 | 2008-06-01 | Taiwan Electronic Packaging Co Ltd | Package structure of image chip with accurate position |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100451950B1 (ko) * | 2002-02-25 | 2004-10-08 | 삼성전자주식회사 | 이미지 센서 소자 웨이퍼 소잉 방법 |
JP4847199B2 (ja) * | 2006-04-25 | 2011-12-28 | 株式会社ディスコ | ウエーハに装着された接着フィルムの破断方法 |
CN101123216A (zh) * | 2006-08-10 | 2008-02-13 | 探微科技股份有限公司 | 维持管芯间距的晶片的切割方法 |
CN102104021B (zh) * | 2009-12-16 | 2013-07-31 | 南茂科技股份有限公司 | 晶片切割方法 |
KR101831938B1 (ko) * | 2011-12-09 | 2018-02-23 | 삼성전자주식회사 | 팬 아웃 웨이퍼 레벨 패키지의 제조 방법 및 이에 의해 제조된 팬 아웃 웨이퍼 레벨 패키지 |
KR20130123682A (ko) * | 2012-05-03 | 2013-11-13 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조 방법 |
-
2014
- 2014-05-22 TW TW103117920A patent/TWI562220B/zh active
-
2015
- 2015-04-23 CN CN201510195387.5A patent/CN105097990B/zh active Active
- 2015-04-23 CN CN201710116295.2A patent/CN107039481B/zh active Active
- 2015-05-04 US US14/703,796 patent/US9419050B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200616177A (en) * | 2004-11-03 | 2006-05-16 | Advanced Semiconductor Eng | Chip package having flat transmission surface of transparent molding compound and method for manufacturing the same |
US20070054419A1 (en) * | 2005-09-02 | 2007-03-08 | Kyung-Wook Paik | Wafer level chip size package for CMOS image sensor module and manufacturing method thereof |
TW200824064A (en) * | 2006-11-24 | 2008-06-01 | Taiwan Electronic Packaging Co Ltd | Package structure of image chip with accurate position |
Also Published As
Publication number | Publication date |
---|---|
TW201545220A (zh) | 2015-12-01 |
CN105097990A (zh) | 2015-11-25 |
CN107039481B (zh) | 2019-11-26 |
CN105097990B (zh) | 2017-04-05 |
US9419050B2 (en) | 2016-08-16 |
US20150340403A1 (en) | 2015-11-26 |
CN107039481A (zh) | 2017-08-11 |
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