TWI562220B - Manufacturing method of semiconductor structure - Google Patents

Manufacturing method of semiconductor structure

Info

Publication number
TWI562220B
TWI562220B TW103117920A TW103117920A TWI562220B TW I562220 B TWI562220 B TW I562220B TW 103117920 A TW103117920 A TW 103117920A TW 103117920 A TW103117920 A TW 103117920A TW I562220 B TWI562220 B TW I562220B
Authority
TW
Taiwan
Prior art keywords
manufacturing
semiconductor structure
semiconductor
Prior art date
Application number
TW103117920A
Other languages
English (en)
Other versions
TW201545220A (zh
Inventor
Yenshih Ho
Shuming Chang
Yungtai Tsai
Tsangyu Liu
Original Assignee
Xintec Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xintec Inc filed Critical Xintec Inc
Priority to TW103117920A priority Critical patent/TWI562220B/zh
Priority to CN201710116295.2A priority patent/CN107039481B/zh
Priority to CN201510195387.5A priority patent/CN105097990B/zh
Priority to US14/703,796 priority patent/US9419050B2/en
Publication of TW201545220A publication Critical patent/TW201545220A/zh
Application granted granted Critical
Publication of TWI562220B publication Critical patent/TWI562220B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687Wafer level processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW103117920A 2014-05-22 2014-05-22 Manufacturing method of semiconductor structure TWI562220B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW103117920A TWI562220B (en) 2014-05-22 2014-05-22 Manufacturing method of semiconductor structure
CN201710116295.2A CN107039481B (zh) 2014-05-22 2015-04-23 半导体结构的制造方法
CN201510195387.5A CN105097990B (zh) 2014-05-22 2015-04-23 半导体结构的制造方法
US14/703,796 US9419050B2 (en) 2014-05-22 2015-05-04 Manufacturing method of semiconductor structure with protein tape

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103117920A TWI562220B (en) 2014-05-22 2014-05-22 Manufacturing method of semiconductor structure

Publications (2)

Publication Number Publication Date
TW201545220A TW201545220A (zh) 2015-12-01
TWI562220B true TWI562220B (en) 2016-12-11

Family

ID=54556633

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103117920A TWI562220B (en) 2014-05-22 2014-05-22 Manufacturing method of semiconductor structure

Country Status (3)

Country Link
US (1) US9419050B2 (zh)
CN (2) CN105097990B (zh)
TW (1) TWI562220B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017131683A1 (en) * 2016-01-28 2017-08-03 Intel IP Corporation Integrated circuit packages
CN107579045A (zh) * 2017-08-14 2018-01-12 晶能光电(江西)有限公司 晶圆切割方法
DE102018128616A1 (de) * 2018-06-24 2019-12-24 Besi Switzerland Ag Vorrichtung und Verfahren zum Ablösen eines Chips von einer Klebefolie
CN111952166A (zh) * 2019-05-17 2020-11-17 玮锋科技股份有限公司 晶圆接合膜及制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200616177A (en) * 2004-11-03 2006-05-16 Advanced Semiconductor Eng Chip package having flat transmission surface of transparent molding compound and method for manufacturing the same
US20070054419A1 (en) * 2005-09-02 2007-03-08 Kyung-Wook Paik Wafer level chip size package for CMOS image sensor module and manufacturing method thereof
TW200824064A (en) * 2006-11-24 2008-06-01 Taiwan Electronic Packaging Co Ltd Package structure of image chip with accurate position

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100451950B1 (ko) * 2002-02-25 2004-10-08 삼성전자주식회사 이미지 센서 소자 웨이퍼 소잉 방법
JP4847199B2 (ja) * 2006-04-25 2011-12-28 株式会社ディスコ ウエーハに装着された接着フィルムの破断方法
CN101123216A (zh) * 2006-08-10 2008-02-13 探微科技股份有限公司 维持管芯间距的晶片的切割方法
CN102104021B (zh) * 2009-12-16 2013-07-31 南茂科技股份有限公司 晶片切割方法
KR101831938B1 (ko) * 2011-12-09 2018-02-23 삼성전자주식회사 팬 아웃 웨이퍼 레벨 패키지의 제조 방법 및 이에 의해 제조된 팬 아웃 웨이퍼 레벨 패키지
KR20130123682A (ko) * 2012-05-03 2013-11-13 삼성전자주식회사 반도체 패키지 및 이의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200616177A (en) * 2004-11-03 2006-05-16 Advanced Semiconductor Eng Chip package having flat transmission surface of transparent molding compound and method for manufacturing the same
US20070054419A1 (en) * 2005-09-02 2007-03-08 Kyung-Wook Paik Wafer level chip size package for CMOS image sensor module and manufacturing method thereof
TW200824064A (en) * 2006-11-24 2008-06-01 Taiwan Electronic Packaging Co Ltd Package structure of image chip with accurate position

Also Published As

Publication number Publication date
TW201545220A (zh) 2015-12-01
CN105097990A (zh) 2015-11-25
CN107039481B (zh) 2019-11-26
CN105097990B (zh) 2017-04-05
US9419050B2 (en) 2016-08-16
US20150340403A1 (en) 2015-11-26
CN107039481A (zh) 2017-08-11

Similar Documents

Publication Publication Date Title
TWI563547B (en) Method of forming semiconductor structure
HK1212101A1 (zh) 製造半導體器件的方法
TWI563643B (en) Semiconductor structure and manufacturing method thereof
SG10201509454YA (en) Wafer producing method
SG10201603903QA (en) Wafer producing method
SG10201602619YA (en) Method of dividing wafer
SG10201603714RA (en) Wafer producing method
HK1208957A1 (zh) 半導體器件的製造方法及半導體器件
SG10201605092PA (en) Wafer producing method
SG10201509475VA (en) Wafer producing method
SG10201604080XA (en) Wafer producing method
SG10201600557XA (en) Wafer producing method
SG10201600555UA (en) Wafer producing method
SG10201510273SA (en) Wafer producing method
SG10201600552YA (en) Wafer producing method
SG10201510271QA (en) Wafer producing method
SG10201601981YA (en) Wafer producing method
SG11201610771SA (en) Method of manufacturing a substrate
SG10201601975SA (en) Wafer producing method
SG10201605337UA (en) Manufacturing method of semiconductor device
SG10201509471YA (en) Wafer producing method
HUE051760T2 (hu) Eljárás félvezetõ modul elõállítására
GB201402508D0 (en) Semiconductor modification process and structures
SG11201709671YA (en) Semiconductor device manufacturing method
HK1216358A1 (zh) 半導體裝置以及半導體裝置的製造方法