TWI561657B - - Google Patents

Info

Publication number
TWI561657B
TWI561657B TW102125929A TW102125929A TWI561657B TW I561657 B TWI561657 B TW I561657B TW 102125929 A TW102125929 A TW 102125929A TW 102125929 A TW102125929 A TW 102125929A TW I561657 B TWI561657 B TW I561657B
Authority
TW
Taiwan
Application number
TW102125929A
Other versions
TW201413023A (zh
Inventor
Mototaka Ochi
Hideo Hata
Hiromi Matsumura
Original Assignee
Kobelco Res Inst Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobelco Res Inst Inc filed Critical Kobelco Res Inst Inc
Publication of TW201413023A publication Critical patent/TW201413023A/zh
Application granted granted Critical
Publication of TWI561657B publication Critical patent/TWI561657B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thin Film Transistor (AREA)
  • Optics & Photonics (AREA)
TW102125929A 2012-07-20 2013-07-19 靶材組裝體 TW201413023A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012162125A JP6059460B2 (ja) 2012-07-20 2012-07-20 ターゲット組立体

Publications (2)

Publication Number Publication Date
TW201413023A TW201413023A (zh) 2014-04-01
TWI561657B true TWI561657B (zh) 2016-12-11

Family

ID=49948911

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102125929A TW201413023A (zh) 2012-07-20 2013-07-19 靶材組裝體

Country Status (5)

Country Link
JP (1) JP6059460B2 (zh)
KR (1) KR101643510B1 (zh)
CN (1) CN104379802B (zh)
TW (1) TW201413023A (zh)
WO (1) WO2014014091A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI813913B (zh) * 2019-11-01 2023-09-01 日商三井金屬鑛業股份有限公司 間隙配置構件及濺鍍靶

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6359901B2 (ja) * 2014-07-16 2018-07-18 三菱マテリアル株式会社 スパッタリングターゲット
JP2017014562A (ja) * 2015-06-30 2017-01-19 株式会社コベルコ科研 スパッタリングターゲット組立体
JP7311290B2 (ja) * 2019-03-27 2023-07-19 Ｊｘ金属株式会社 分割スパッタリングターゲット及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201202452A (en) * 2010-04-07 2012-01-16 Kobe Steel Ltd Oxide for semiconductor layer of thin film transistor, sputtering target, and thin film transistor
WO2012063524A1 (ja) * 2010-11-08 2012-05-18 三井金属鉱業株式会社 分割スパッタリングターゲット及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08170170A (ja) * 1994-12-16 1996-07-02 Tosoh Corp スパッタリングターゲット
JPH10121232A (ja) * 1996-10-14 1998-05-12 Mitsubishi Chem Corp スパッタリングターゲット
JP3759673B2 (ja) 1998-01-12 2006-03-29 三井金属鉱業株式会社 スパッタリングターゲットおよびその製造方法
DE60329638D1 (de) * 2002-08-02 2009-11-19 Idemitsu Kosan Co Sputtertarget, Sinterkörper, unter deren Verwendung gebildeter leitfähiger Film, organische EL-Vorrichtung und für diesen verwendetes Substrat
JP5244331B2 (ja) * 2007-03-26 2013-07-24 出光興産株式会社 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット
JP5213458B2 (ja) 2008-01-08 2013-06-19 キヤノン株式会社 アモルファス酸化物及び電界効果型トランジスタ
CN102245532A (zh) * 2008-12-15 2011-11-16 出光兴产株式会社 复合氧化物烧结体及由其构成的溅射靶
JP5377142B2 (ja) * 2009-07-28 2013-12-25 ソニー株式会社 ターゲットの製造方法、メモリの製造方法
KR20170072965A (ko) * 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 그 제조방법, 및 트랜지스터

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201202452A (en) * 2010-04-07 2012-01-16 Kobe Steel Ltd Oxide for semiconductor layer of thin film transistor, sputtering target, and thin film transistor
WO2012063524A1 (ja) * 2010-11-08 2012-05-18 三井金属鉱業株式会社 分割スパッタリングターゲット及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI813913B (zh) * 2019-11-01 2023-09-01 日商三井金屬鑛業股份有限公司 間隙配置構件及濺鍍靶

Also Published As

Publication number Publication date
WO2014014091A1 (ja) 2014-01-23
JP6059460B2 (ja) 2017-01-11
CN104379802B (zh) 2017-04-05
JP2014019930A (ja) 2014-02-03
KR20150023817A (ko) 2015-03-05
KR101643510B1 (ko) 2016-07-27
CN104379802A (zh) 2015-02-25
TW201413023A (zh) 2014-04-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees