JP6059460B2 - ターゲット組立体 - Google Patents
ターゲット組立体 Download PDFInfo
- Publication number
- JP6059460B2 JP6059460B2 JP2012162125A JP2012162125A JP6059460B2 JP 6059460 B2 JP6059460 B2 JP 6059460B2 JP 2012162125 A JP2012162125 A JP 2012162125A JP 2012162125 A JP2012162125 A JP 2012162125A JP 6059460 B2 JP6059460 B2 JP 6059460B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- oxide
- sputtering
- backing plate
- igzo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 claims description 52
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 229910052715 tantalum Inorganic materials 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 229910052735 hafnium Inorganic materials 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 11
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 description 37
- 239000010408 film Substances 0.000 description 36
- 239000010949 copper Substances 0.000 description 28
- 230000008018 melting Effects 0.000 description 26
- 238000002844 melting Methods 0.000 description 26
- 238000004544 sputter deposition Methods 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 22
- 238000005477 sputtering target Methods 0.000 description 22
- 229910000679 solder Inorganic materials 0.000 description 20
- 125000006850 spacer group Chemical group 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000011701 zinc Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000005484 gravity Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910007541 Zn O Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910017813 Cu—Cr Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Thin Film Transistor (AREA)
- Optics & Photonics (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012162125A JP6059460B2 (ja) | 2012-07-20 | 2012-07-20 | ターゲット組立体 |
PCT/JP2013/069670 WO2014014091A1 (ja) | 2012-07-20 | 2013-07-19 | ターゲット組立体 |
CN201380031944.9A CN104379802B (zh) | 2012-07-20 | 2013-07-19 | 靶组装体 |
TW102125929A TW201413023A (zh) | 2012-07-20 | 2013-07-19 | 靶材組裝體 |
KR1020157001469A KR101643510B1 (ko) | 2012-07-20 | 2013-07-19 | 타겟 조립체 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012162125A JP6059460B2 (ja) | 2012-07-20 | 2012-07-20 | ターゲット組立体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014019930A JP2014019930A (ja) | 2014-02-03 |
JP6059460B2 true JP6059460B2 (ja) | 2017-01-11 |
Family
ID=49948911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012162125A Expired - Fee Related JP6059460B2 (ja) | 2012-07-20 | 2012-07-20 | ターゲット組立体 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6059460B2 (zh) |
KR (1) | KR101643510B1 (zh) |
CN (1) | CN104379802B (zh) |
TW (1) | TW201413023A (zh) |
WO (1) | WO2014014091A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6359901B2 (ja) * | 2014-07-16 | 2018-07-18 | 三菱マテリアル株式会社 | スパッタリングターゲット |
JP2017014562A (ja) * | 2015-06-30 | 2017-01-19 | 株式会社コベルコ科研 | スパッタリングターゲット組立体 |
JP7311290B2 (ja) * | 2019-03-27 | 2023-07-19 | Jx金属株式会社 | 分割スパッタリングターゲット及びその製造方法 |
WO2021084838A1 (ja) * | 2019-11-01 | 2021-05-06 | 三井金属鉱業株式会社 | 隙間配置部材 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08170170A (ja) * | 1994-12-16 | 1996-07-02 | Tosoh Corp | スパッタリングターゲット |
JPH10121232A (ja) * | 1996-10-14 | 1998-05-12 | Mitsubishi Chem Corp | スパッタリングターゲット |
JP3759673B2 (ja) | 1998-01-12 | 2006-03-29 | 三井金属鉱業株式会社 | スパッタリングターゲットおよびその製造方法 |
DE60329638D1 (de) * | 2002-08-02 | 2009-11-19 | Idemitsu Kosan Co | Sputtertarget, Sinterkörper, unter deren Verwendung gebildeter leitfähiger Film, organische EL-Vorrichtung und für diesen verwendetes Substrat |
JP5244331B2 (ja) * | 2007-03-26 | 2013-07-24 | 出光興産株式会社 | 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット |
JP5213458B2 (ja) | 2008-01-08 | 2013-06-19 | キヤノン株式会社 | アモルファス酸化物及び電界効果型トランジスタ |
CN102245532A (zh) * | 2008-12-15 | 2011-11-16 | 出光兴产株式会社 | 复合氧化物烧结体及由其构成的溅射靶 |
JP5377142B2 (ja) * | 2009-07-28 | 2013-12-25 | ソニー株式会社 | ターゲットの製造方法、メモリの製造方法 |
KR20170072965A (ko) * | 2009-11-13 | 2017-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링 타겟 및 그 제조방법, 및 트랜지스터 |
JP2012124446A (ja) * | 2010-04-07 | 2012-06-28 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ |
CN102712997B (zh) * | 2010-11-08 | 2014-03-19 | 三井金属矿业株式会社 | 分割溅镀靶及其制造方法 |
-
2012
- 2012-07-20 JP JP2012162125A patent/JP6059460B2/ja not_active Expired - Fee Related
-
2013
- 2013-07-19 WO PCT/JP2013/069670 patent/WO2014014091A1/ja active Application Filing
- 2013-07-19 CN CN201380031944.9A patent/CN104379802B/zh not_active Expired - Fee Related
- 2013-07-19 KR KR1020157001469A patent/KR101643510B1/ko active IP Right Grant
- 2013-07-19 TW TW102125929A patent/TW201413023A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2014014091A1 (ja) | 2014-01-23 |
CN104379802B (zh) | 2017-04-05 |
JP2014019930A (ja) | 2014-02-03 |
TWI561657B (zh) | 2016-12-11 |
KR20150023817A (ko) | 2015-03-05 |
KR101643510B1 (ko) | 2016-07-27 |
CN104379802A (zh) | 2015-02-25 |
TW201413023A (zh) | 2014-04-01 |
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